Search results for: High gain power amplifier

Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

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In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: Optical amplifiers, EDFA, L-band, optical networks.

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Authors: Alpana Agarwal, Akhil Sharma

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This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7^o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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Authors: Renbin Dai, Rana Arslan Ali Khan

Abstract:

The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.

Keywords: Power amplifier, Class AB, Class A, MMIC, 2-stage, X band.

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Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.

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In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.

Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.

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Authors: F. Rahmani, F. Razaghian, A. R. Kashaninia

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This article proposes a new method for application in communication circuit systems that increase efficiency, PAE, output power and gain in the circuit. The proposed method is based on a combination of switching class-E and class-J and has been termed class-EJ. This method was investigated using both theory and simulation to confirm ∼72% PAE and output power of >39dBm. The combination and design of the proposed power amplifier accrues gain of over 15dB in the 2.9 to 3.5GHz frequency bandwidth. This circuit was designed using MOSFET and high power transistors. The loadand source-pull method achieved the best input and output networks using lumped elements. The proposed technique was investigated for fundamental and second harmonics having desirable amplitudes for the output signal.

Keywords: Power Amplifier (PA), GaN HEMT, Class-J and Class-E, High Efficiency.

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

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A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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Authors: Gu Wei, Gao Wei

Abstract:

In this report, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with difference-ended amplifier, this OTA achieve high-gain and high-speed. Besides, the CMFB circuit is also used, and some methods are concerned to improve the performance. Then, by optimization the layout design, OTA-s mismatch was reduced. This design was using TSMC 0.18um CMOS process and simulation both schematic and layout in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB,a unity gain bandwidth of about 1.437GHz for a 2pF load, a slew rate is about 428V/μs, a output swing is 0.2V~1.35V, with the power supply of 1.8V, the power consumption is 88mW. This amplifier was used in a 10bit 150MHz pipelined ADC.

Keywords: OTA, common drain, CMFB, pipelined ADC

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Authors: Hassan Faraji Baghtash

Abstract:

A high-speed current mirror with low-power method of adjusting current gain is presented. The current mirror provides continuous gain adjustment; yet, its gain can simply be programmed digitally, as well. The structure features the ever interesting merits of linear-in-dB gain control scheme and low power/voltage operation. The performance of proposed structure is verified through the simulation in TSMC 0.18 µm CMOS Technology. The proposed tunable gain current mirror structure draws only 18 µW from 0.9 V power supply and can operate at high frequencies up to 550 MHz in the worst case condition of maximum gain setting.

Keywords: Current mirror, current mode, low power, low voltage, tunable circuit, variable current amplifier.

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Authors: Parekhan M. Jaff

Abstract:

This paper describes the gain and noise performances of discrete Raman amplifier as a function of fiber lengths and the signal input powers for different pump configurations. Simulation has been done by using optisystem 7.0 software simulation at signal wavelength of 1550 nm and a pump wavelength of 1450nm. The results showed that the gain is higher in bidirectional pumping than in counter pumping, the gain changes with increasing the fiber length while the noise figure remain the same for short fiber lengths and the gain saturates differently for different pumping configuration at different fiber lengths and power levels of the signal.

Keywords: Optical Amplifier, Raman Amplifier DiscreteRaman Amplifier (DRA), Wavelength Division Multiplexing(WDM).

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Authors: Yasir Mahmood Qureshi

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This paper presents the design and layout of a two stage, high speed operational amplifiers using standard 0.35um CMOS technology. The design procedure involves designing the bias circuit, the differential input pair, and the gain stage using CAD tools. Both schematic and layout of the operational amplifier along with the comparison in the results of the two has been presented. The operational amplifier designed, has a gain of 93.51db at low frequencies. It has a gain bandwidth product of 55.07MHz, phase margin of 51.9º and a slew rate of 22v/us for a load of capacitor of 10pF.

Keywords: Gain bandwidth product, Operational Amplifier, phase margin, slew rate.

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Authors: Makesh Iyer, T. Shanmuganantham

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This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.

Keywords: Low noise amplifier, substrate, distributed components, gain, noise figure.

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Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.

An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), Gallium Nitride (GaN), Agilent’s Advanced Design system (ADS) and lumped elements.

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Authors: Gao Wei, Xu Minglu, Xu Yan, Zhang Xiaotong, Wang Xinghua

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A 3.5-bit stage of the CMOS pipelined ADC is proposed. In this report, the main part of 3.5-bit stage ADC is introduced. How the MDAC, comparator and encoder worked and designed are shown in details. Besides, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with differential amplifier, this OTA achieve high-gain and high-speed. This design was using CMOS 0.18um process and simulation in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB, the unity gain bandwidth of about 1.138GHz with 2pF load.

Keywords: pipelined ADC, MDAC, operational amplifier.

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Authors: Xiwei Huang, Hyouk-Kyu Cha, Dongning Zhao, Bin Guo, Minkyu Je, Hao Yu

Abstract:

This paper presents the design and implementation of a fully integrated transimpedance amplifier (TIA) as the analog frontend receiver for Capacitive Micromachined Ultrasound Transducers (CMUTs) for ultrasound biomicroscope imaging application. The amplifier is designed to amplify the received signals from 17.5MHz to 52.5MHz with a center frequency of 35MHz. The TIA was fabricated in GF 0.18μm 1P6M 30V high voltage process. The measurement results show that the designed amplifier can reach a transimpedance gain of 61.08dBΩ and operating frequency from 17.5MHz to 100MHz with 1VP-P output voltage under 6V power supply.

Keywords: 3D ultrasound biomicroscope, analog front-end, transimpedance amplifier, CMUT

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Authors: Jan Doutreloigne

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The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: Audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier.

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Authors: M. Zamin Khan, Yanjie Wang, R. Raut

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A 1V, 1GHz low noise amplifier (LNA) has been designed and simulated using Spectre simulator in a standard TSMC 0.18um CMOS technology.With low power and noise optimization techniques, the amplifier provides a gain of 24 dB, a noise figure of only 1.2 dB, power dissipation of 14 mW from a 1 V power supply.

Keywords:

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Authors: Abdelhamid Louliej, Younes Jabrane

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Satellites are becoming indispensable assets to fifth-generation (5G) new radio architecture, complementing wireless and terrestrial communication links. The combination of satellites and 5G architecture allows consumers to access all next-generation services anytime, anywhere, including scenarios, like traveling to remote areas (without coverage). Nevertheless, this solution faces several challenges, such as a significant propagation delay, Doppler frequency shift, and high Peak-to-Average Power Ratio (PAPR), causing signal distortion due to the non-linear saturation of the High-Power Amplifier (HPA). To compensate for HPA non-linearity in 5G satellite transmission, an efficient pre-distorter scheme using Neural Networks (NN) is proposed. To assess the proposed NN pre-distorter, two types of HPA were investigated: Travelling Wave Tube Amplifier (TWTA) and Solid-State Power Amplifier (SSPA). The results show that the NN pre-distorter design presents an Error Vector Magnitude (EVM) improvement by 95.26%. Normalized Mean Square Error (NMSE) and Adjacent Channel Power Ratio (ACPR) were reduced by -43,66 dB and 24.56 dBm, respectively. Moreover, the system suffers no degradation of the Bit Error Rate (BER) for TWTA and SSPA amplifiers.

Keywords: Satellites, 5G, Neural Networks, High-Power Amplifier, Travelling Wave Tube Amplifier, Solid-State Power Amplifier, EVM, NMSE, ACPR.

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Authors: Gianluca Cornetta, David J. Santos, Balwant Godara

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A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee.

Keywords: Current Reuse, IEEE 802.15.4 (ZigBee), Low NoiseAmplifiers, Wireless Sensor Networks.

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Authors: Hossein Sahoolizadeh, Alishir Moradi Kordalivand, Zargham Heidari

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In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation Forces desingners to make choices in the desing of RF circuits. In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using MESFET for frequency range of 5 GHz to 6 GHz. The desing simulation process is down using Advance Design System (ADS). A single stage LNA has successfully designed with 15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3 GHz. Also the designed LNA should be working stably In a frequency range of 5 GHz to 6 GHz.

Keywords: Advance Design System, Low Noise Amplifier, Radio Frequency, Noise Figure.

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Authors: Seong-Ho Song, Ki-Seob Kim, Seon-Woo Lee, Seop-Hyeong Park

Abstract:

Based on a theoretical erbium-doped fiber amplifier (EDFA) model, we have proposed an application of disturbance observer(DOB) with proportional/integral/differential(PID) controller to EDFA for minimizing gain-transient time of wavelength -division-multiplexing (WDM) multi channels in optical amplifier in channel add/drop networks. We have dramatically reduced the gain-transient time to less than 30μsec by applying DOB with PID controller to the control of amplifier gain. The proposed DOB-based gain control algorithm for EDFA was implemented as a digital control system using TI's DSP(TMS320C28346) chip and experimental results of the system verify the excellent performance of the proposed gain control methodology.

Keywords: EDFA, Disturbance observer, gain control, WDM.

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Authors: Maninder Kaur Gill, Alpana Agarwal

Abstract:

It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values.

Keywords: Device under test, open-loop voltage gain, operational amplifier, test circuit.

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Authors: Yeon-kug Moon, Kang-Yoon Lee, Yun-Jae Won, Seung-Ok Lim

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This paper describes a low-voltage and low-power channel selection analog front end with continuous-time low pass filters and highly linear programmable gain amplifier (PGA). The filters were realized as balanced Gm-C biquadratic filters to achieve a low current consumption. High linearity and a constant wide bandwidth are achieved by using a new transconductance (Gm) cell. The PGA has a voltage gain varying from 0 to 65dB, while maintaining a constant bandwidth. A filter tuning circuit that requires an accurate time base but no external components is presented. With a 1-Vrms differential input and output, the filter achieves -85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA were implemented in a 0.18um 1P6M n-well CMOS process. They consume 3.2mW from a 1.8V power supply and occupy an area of 0.19mm2.

Keywords: component ; Channel selection filters, DC offset, programmable gain amplifier, tuning circuit

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Authors: S. Kumaravel, B. Venkataramani

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In the literature, Improved Recycling Folded Cascode (IRFC) Operational Transconductance Amplifier (OTA) is proposed for enhancing the DC gain and the Unity Gain Bandwidth (UGB) of the Recycling Folded Cascode (RFC) OTA. In this paper, an enhanced IRFC (EIRFC) OTA which uses positive feedback at the cascode node is proposed for enhancing the differential mode (DM) gain without changing the unity gain bandwidth (UGB) and lowering the Common mode (CM) gain. For the purpose of comparison, IRFC and EIRFC OTAs are implemented using UMC 90nm CMOS technology and studied through simulation. From the simulation, it is found that the DM gain and CM gain of EIRFC OTA is higher by 6dB and lower by 38dB respectively, compared to that of IRFC OTA for the same power and area. The slew rate of EIRFC OTA is also higher by a factor of 1.5.

Keywords: Cascode Amplifier, CMRR, gm/ID Methodology, Recycling, Slew Rate.

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Authors: Sanaz Haddadian, Rahele Hedayati

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A 10bit, 40 MSps, sample and hold, implemented in 0.18-μm CMOS technology with 3.3V supply, is presented for application in the front-end stage of an analog-to-digital converter. Topology selection, biasing, compensation and common mode feedback are discussed. Cascode technique has been used to increase the dc gain. The proposed opamp provides 149MHz unity-gain bandwidth (wu), 80 degree phase margin and a differential peak to peak output swing more than 2.5v. The circuit has 55db Total Harmonic Distortion (THD), using the improved fully differential two stage operational amplifier of 91.7dB gain. The power dissipation of the designed sample and hold is 4.7mw. The designed system demonstrates relatively suitable response in different process, temperature and supply corners (PVT corners).

Keywords: Analog Integrated Circuit Design, Sample & Hold Amplifier and CMOS Technology.

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Authors: Guo-Ming Sung, Naga Raju Naik R.

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Paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: Pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA.

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Authors: Karama M. AL-Tamimi, Munir A. Al-Absi

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A new OTA-based logarithmic-control variable gain current amplifier (LCCA) is presented. It consists of two Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The circuit operates from 0.6V DC power supply and consumes 0.6 μW. The linear-dB controllable output range is 43 dB with maximum error less than 0.5dB. The functionality of the proposed design was confirmed using HSPICE in 0.35μm CMOS process technology.

Keywords: LCCA, OTA, Logarithmic, VGA, Weak inversion, Current-mode

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Authors: Hyunwon Moon

Abstract:

It is necessary to realize new biomedical wireless communication systems which send the signals collected from various bio sensors located at human body in order to monitor our health. Also, it should seamlessly connect to the existing wireless communication systems. A 5.8 GHz ISM band low power RF front-end receiver for a biomedical wireless communication system is implemented using a 0.5 µm SiGe BiCMOS process. To achieve low power RF front-end, the current optimization technique for selecting device size is utilized. The implemented low noise amplifier (LNA) shows a power gain of 9.8 dB, a noise figure (NF) of below 1.75 dB, and an IIP3 of higher than 7.5 dBm while current consumption is only 6 mA at supply voltage of 2.5 V. Also, the performance of a down-conversion mixer is measured as a conversion gain of 11 dB and SSB NF of 10 dB.

Keywords: Biomedical, low noise amplifier, mixer, receiver, RF front-end, SiGe.

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Authors: Abdulamgid.T. Bouzed, Suleiman. M. Elhamali

Abstract:

The technical realization of data transmission using glass fiber began after the development of diode laser in year 1962. The erbium doped fiber amplifiers (EDFA's) in high speed networks allow information to be transmitted over longer distances without using of signal amplification repeaters. These kinds of fibers are doped with erbium atoms which have energy levels in its atomic structure for amplifying light at 1550nm. When a carried signal wave at 1550nm enters the erbium fiber, the light stimulates the excited erbium atoms which pumped with laser beam at 980nm as additional light. The wavelength and intensity of the semiconductor lasers depend on the temperature of active zone and the injection current. The present paper shows the effect of the diode lasers temperature and injection current on the optical amplification. From the results of in- and output power one may calculate the max. optical gain by erbium doped fiber amplifier.

Keywords: Amplifier, erbium doped fiber, gain, lasers, temperature.

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Authors: M.Yousefi, A.Vatanjou, F.Nazeri

Abstract:

A fast settling multipath CMOS OTA for high speed switched capacitor applications is presented here. With the basic topology similar to folded-cascode, bandwidth and DC gain of the OTA are enhanced by adding extra paths for signal from input to output. Designed circuit is simulated with HSPICE using level 49 parameters (BSIM 3v3) in 0.35mm standard CMOS technology. DC gain achieved is 56.7dB and Unity Gain Bandwidth (UGB) obtained is 1.15GHz. These results confirm that adding extra paths for signal can improve DC gain and UGB of folded-cascode significantly.

Keywords: OTA (Operational Transconductance Amplifier), DC gain, Unity Gain Bandwidth (UGBW)

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