Search results for: enhancement mode GaN power transistors

Authors: L. Boyaci

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Two basic equipment of electrical power subsystem of space satellites are Power Conditioning Unit (PCU) and Power Distribution Unit (PDU). Today, the main switching element used in power equipment in satellites is silicon (Si) based radiation-hardened MOSFET. GaNFETs have superior performances over MOSFETs in terms of their conduction and switching characteristics. GaNFET has started to take MOSFET’s place in many applications in industry especially by virtue of its switching performances. If GaNFET can also be used in equipment for space applications, this would be great revolution for future space power subsystem designs. In this study, the effect of proton irradiation on Gallium Nitride based power transistors was investigated. Four commercial enhancement mode GaN power transistors from Efficient Power Conversion Corporation (EPC) are irradiated with 30MeV protons while devices are switching. Flux of 8.2x10⁹ protons/cm²/s is applied for 12.5 seconds to reach ultimate fluence of 10¹¹ protons/cm². Vgs-Ids characteristics are measured and recorded for each device before, during and after irradiation. It was observed that if there would be destructive events. Proton induced permanent damage on devices is not observed. All the devices remained healthy and continued to operate. For two of these devices, further irradiation is applied with same flux for 30 minutes up to a total fluence level of 1.476x10¹³ protons/cm². We observed that GaNFETs are fully functional under this high level of radiation and no destructive events and irreversible failures took place for transistors. Results reveal that irradiated GaNFET in this experiment has radiation tolerance under proton testing and very important candidate for being one of the future power switching element in space.

Keywords: enhancement mode GaN power transistors, proton irradiation effects, radiation tolerance

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Authors: Patikineti Sreenivasulu, K. srinivasa Rao, A. Vinaya Babu

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The demand for portability, performance and high functional integration density of digital devices leads to the scaling of complementary metal oxide semiconductor (CMOS) devices inevitable. The increase in power consumption, coupled with the increasing demand for portable/hand-held electronics, has made power consumption a dominant concern in the design of VLSI circuits today. MTCMOS technology provides low leakage and high performance operation by utilizing high speed, low Vt (LVT) transistors for logic cells and low leakage, high Vt (HVT) devices as sleep transistors. Sleep transistors disconnect logic cells from the supply and/or ground to reduce the leakage in the sleep mode. In this technology, energy consumption while doing the mode transition and minimum time required to turn ON the circuit upon receiving the wake up signal are issues to be considered because these can adversely impact the performance of VLSI circuit. In this paper we are introducing an enhancing method of MTCMOS technology to optimize the power in MTCMOS sequential circuits.

Keywords: power consumption, ultra-low power, leakage, sub threshold, MTCMOS

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Authors: Samson Mil'shtein, Dhawal Asthana, Benjamin Sullivan

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The wide energy gap of GaN is the major parameter justifying the design and fabrication of high-power electronic components made of this material. However, the existence of a piezo-electrics in nature sheet charge at the AlGaN/GaN interface complicates the control of carrier injection into the intrinsic channel of GaN HEMTs (High Electron Mobility Transistors). As a result, most of the transistors created as R&D prototypes and all of the designs used for mass production are D-mode devices which introduce challenges in the design of integrated circuits. This research presents the design and modeling of an E-mode GaN HEMT with a very low turn-on voltage. The proposed device includes two critical elements allowing the transistor to achieve zero conductance across the channel when Vg = 0V. This is accomplished through the inclusion of an extremely thin, 2.5nm intrinsic Ga₀.₇₄Al₀.₂₆N spacer layer. The added spacer layer does not create piezoelectric strain but rather elastically follows the variations of the crystal structure of the adjacent GaN channel. The second important factor is the design of a gate metal with a high work function. The use of a metal gate with a work function (Ni in this research) greater than 5.3eV positioned on top of n-type doped (Nd=10¹⁷cm⁻³) Ga₀.₇₄Al₀.₂₆N creates the necessary built-in potential, which controls the injection of electrons into the intrinsic channel as the gate voltage is increased. The 5µm long transistor with a 0.18µm long gate and a channel width of 30µm operate at Vd=10V. At Vg =1V, the device reaches the maximum drain current of 0.6mA, which indicates a high current density. The presented device is operational at frequencies greater than 10GHz and exhibits a stable transconductance over the full range of operational gate voltages.

Keywords: compound semiconductors, device modeling, enhancement mode HEMT, gallium nitride

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Authors: Robert Setekera, Ramses van der Toorn

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We present an extensive analysis of the temperature dependence of the local avalanche model used in most of the modern compact models for bipolar transistors. This local avalanche model uses the Chynoweth's empirical law for ionization coefficient to define the generation of the avalanche current in terms of the local electric field. We carry out the model analysis using DC-measurements taken on both Si and advanced SiGe bipolar transistors. For the advanced industrial SiGe-HBTs, we consider both high-speed and high-power devices (both NPN and PNP transistors). The limitations of the local avalanche model in modeling the temperature dependence of the avalanche current mostly in the weak avalanche region are demonstrated. In addition, the model avalanche parameters are analyzed to see if they are in agreement with semiconductor device physics.

Keywords: avalanche multiplication, avalanche current, bipolar transistors, compact modeling, electric field, impact ionization, local avalanche

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

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The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity, and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: LDMOS, amplifier, back-off, bias circuit

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Authors: Pankaj Negi

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Nowadays the demand for receiving the high quality electrical energy is being increasing as consumer wants not only reliable but also quality power. Custom power instruments are of the most well-known compensators of power quality in distributed network. This paper present a comprehensive review of compensating custom power devices mainly DSTATCOM (distribution static compensator),DVR (dynamic voltage restorer), and UPQC (unified power quality compensator) and also deals with sliding mode control and its applications to custom power devices. The sliding mode control strategy provides robustness to custom power device and enhances the dynamic response for compensating voltage sag, swell, voltage flicker, and voltage harmonics. The aim of this paper is to provide a broad perspective on the status of compensating devices in electric power distribution system and sliding mode control strategies to researchers and application engineers who are dealing with power quality and stability issues.

Keywords: active power filters(APF), custom power device(CPD), DSTATCOM, DVR, UPQC, sliding mode control (SMC), power quality

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Authors: Pejman Hosseinioun, Ali Safari, Hamed Sarbazi

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Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising material for future high-speed nanoelectronics due to its intrinsic superior carrier mobility and very high saturation velocity. These exceptional carrier transport properties suggest that graphene field effect transistors (G-FETs) can potentially outperform other FET technologies. In this paper, detailed discussions are introduced for Graphene Transistors Based Microwave Amplifiers.

Keywords: graphene, microwave FETs, microwave amplifiers, transistors

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Authors: Phanumas Khumsat, Chalermchai Janmane

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Low-voltage instrumentation amplifier has been proposed for 3-lead electrocardiogram measurement system. The circuit’s interference rejection technique is based upon common-mode feed-forwarding where common-mode currents have cancelled each other at the output nodes. The common-mode current for cancellation is generated by means of common-mode sensing and emitter or source followers with resistors employing only one transistor. Simultaneously this particular transistor also provides common-mode feedback to the patient’s right/left leg to further reduce interference entering the amplifier. The proposed designs have been verified with simulations in 0.18-µm CMOS process operating under 1.0-V supply with CMRR greater than 80dB. Moreover ECG signals have experimentally recorded with the proposed instrumentation amplifiers implemented from discrete BJT (BC547, BC558) and MOSFET (ALD1106, ALD1107) transistors working with 1.5-V supply.

Keywords: electrocardiogram, common-mode feedback, common-mode feedforward, communication engineering

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Authors: Abdelghafour Galadi

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In this paper, accurate power MOSFET models including quasi-saturation effect are presented. These models have no internal node voltages determined by the circuit simulator and use one JFET or one depletion mode MOSFET transistors controlled by an “effective” gate voltage taking into account the quasi-saturation effect. The proposed models achieve accurate simulation results with an average error percentage less than 9%, which is an improvement of 21 percentage points compared to the commonly used standard power MOSFET model. In addition, the models can be integrated in any available commercial circuit simulators by using their analytical equations. A description of the models will be provided along with the parameter extraction procedure.

Keywords: power MOSFET, drift layer, quasi-saturation effect, SPICE model

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Authors: Peihao Huang, Chun Zhao

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Thin-film transistors(TFTs) have the advantages of low power consumption, short reaction time, and have high research value in the field of semiconductors, based on this reason, people have focused on gallium oxide-indium oxide thin-film transistors, a relatively common thin-film transistor, elaborated and analyzed his production process, "aqueous solution method", explained the purpose of each step of operation, and finally explored the influence of potassium ions doped in the channel layer on the electrical properties of the device, as well as the effect of oxygen vacancies on its switching ratio and memory, and summarized the conclusions.

Keywords: aqueous solution, oxygen vacancies, switch ratio, thin-film transistor(TFT)

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Authors: Xuerui Niu, Bolin Wang, Xinchuang Zhang, Xiaohua Ma, Bin Hou, Ling Yang

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The application of discrete GaN-based power switches requires the collaboration of silicon-based peripheral circuit structures. However, the packages and interconnection between the Si and GaN devices can introduce parasitic effects to the circuit, which has great impacts on GaN power transistors. GaN-based monolithic power integration technology is an emerging solution which can improve the stability of circuits and allow the GaN-based devices to achieve more functions. Complementary logic circuits consisting of GaN-based E-mode p-channel heterostructure field-effect transistors (p-HFETs) and E-mode n-channel HEMTs can be served as the gate drivers. E-mode p-HFETs with recessed gate have attracted increasing interest because of the low leakage current and large gate swing. However, they suffer from a poor interface between the gate dielectric and polarized nitride layers. The reliability of p-HFETs is analyzed and discussed in this work. In circuit applications, the inverter is always operated with dynamic gate voltage (VGS) rather than a constant VGS. Therefore, dynamic electrical stress has been simulated to resemble the operation conditions for E-mode p-HFETs. The dynamic electrical stress condition is as follows. VGS is a square waveform switching from -5 V to 0 V, VDS is fixed, and the source grounded. The frequency of the square waveform is 100kHz with the rising/falling time of 100 ns and duty ratio of 50%. The effective stress time is 1000s. A number of stress tests are carried out. The stress was briefly interrupted to measure the linear IDS-VGS, saturation IDS-VGS, As VGS switches from -5 V to 0 V and VDS = 0 V, devices are under negative-bias-instability (NBI) condition. Holes are trapped at the interface of oxide layer and GaN channel layer, which results in the reduction of VTH. The negative shift of VTH is serious at the first 10s and then changes slightly with the following stress time. However, different phenomenon is observed when VDS reduces to -5V. VTH shifts negatively during stress condition, and the variation in VTH increases with time, which is different from that when VDS is 0V. Two mechanisms exists in this condition. On the one hand, the electric field in the gate region is influenced by the drain voltage, so that the trapping behavior of holes in the gate region changes. The impact of the gate voltage is weakened. On the other hand, large drain voltage can induce the hot holes generation and lead to serious hot carrier stress (HCS) degradation with time. The poor-quality interface between the oxide layer and GaN channel layer at the gate region makes a major contribution to the high-density interface traps, which will greatly influence the reliability of devices. These results emphasize that the improved etching and pretreatment processes needs to be developed so that high-performance GaN complementary logics with enhanced stability can be achieved.

Keywords: GaN-based E-mode p-HFETs, dynamic electric stress, threshold voltage, monolithic power integration technology

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Authors: Mahdiar Hosseighadiry, Farnaz Fotovatikhah, Razali Ismail, Mohsen Khaledian, Mehdi Saeidemanesh

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In this paper, a new low-power high-performance full adder is presented based on a new design method. The proposed method relies on pass gate design and provides full-swing circuits with minimum number of transistors. The method has been applied on SUM, COUT and XOR-XNOR modules resulting on rail-to-rail intermediate and output signals with no feedback transistors. The presented full adder cell has been simulated in 45 and 32 nm CMOS technologies using HSPICE considering parasitic capacitance and compared to several well-known designs from literature. In addition, the proposed cell has been extensively evaluated with different output loads, supply voltages, temperatures, threshold voltages, and operating frequencies. Results show that it functions properly under all mentioned conditions and exhibits less PDP compared to other design styles.

Keywords: full adders, low-power, high-performance, VLSI design

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Authors: A. Arya, R. Laha, V. R. Dantham

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We report the enhancement of Raman scattering signal by one order of magnitude using photonic nanojet (PNJ) of a lollipop shaped dielectric microstructure (LSDM) fabricated by a pulsed CO₂ laser. Here, the PNJ is generated by illuminating sphere portion of the LSDM with non-resonant laser. Unlike the surface enhanced Raman scattering (SERS) technique, this technique is simple, and the obtained results are highly reproducible. In addition, an efficient technique is proposed to enhance the SERS signal with the help of high quality factor optical resonance (whispering gallery mode) of a LSDM. From the theoretical simulations, it has been found that at least an order of magnitude enhancement in the SERS signal could be achieved easily using the proposed technique. We strongly believe that this report will enable the research community for improving the Raman scattering signals.

Keywords: localized surface plasmons, photonic nanojet, SERS, whispering gallery mode

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Authors: Chhavi Saxena

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FinFETs can be a replacement for bulk-CMOS transistors in many different designs. Its low leakage/standby power property makes FinFETs a desirable option for memory sub-systems. Memory modules are widely used in most digital and computer systems. Leakage power is very important in memory cells since most memory applications access only one or very few memory rows at a given time. As technology scales down, the importance of leakage current and power analysis for memory design is increasing. In this paper, we discover an option for low power interconnect synthesis at the 32nm node and beyond, using Fin-type Field-Effect Transistors (FinFETs) which are a promising substitute for bulk CMOS at the considered gate lengths. We consider a mechanism for improving FinFETs efficiency, called variable supply voltage schemes. In this paper, we’ve illustrated the design and implementation of FinFET based 4x4 SRAM cell array by means of one bit 7T SRAM. FinFET based 7T SRAM has been designed and analysis have been carried out for leakage current, dynamic power and delay. For the validation of our design approach, the output of FinFET SRAM array have been compared with standard CMOS SRAM and significant improvements are obtained in proposed model.

Keywords: FinFET, 7T SRAM cell, leakage current, delay

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Authors: Maamar Latroch, Mohamed Bourahla

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Forward topology used in switch mode power supply (SMPS) is one of the most famous configuration feeding DC systems such as telecommunication systems and other specific applications where the galvanic isolation is required. This configuration benefits of the high frequency feature of the transformer to provide a small size and light weight of the over all system. However, the stresses existing on the power switch during an ON/OFF commutation limit the transmitted power to the DC load. This paper investigates the main causes of the stresses in voltage existing during a commutation cycle and suggest a low cost solution that eliminates the overvoltage. As a result, this configuration will yield the possibility of the use of this configuration in higher power applications. Simulation results will show the efficiency of the presented method.

Keywords: switch mode power supply, forward topology, resonance topology, high frequency commutation

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Authors: Karandeep Kaur

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This paper presents the design of power amplifier (PA) for mmWave communication systems. The designed amplifier uses GlobalFoundries 22 FDX technology and works at an operational frequency of 140 GHz in the D-Band. With a supply voltage of 0.8V for the super low threshold voltage transistors, the amplifier is biased in class AB and has a total current consumption of 50 mA. The measured saturated output power from the power amplifier is 5.6 dBm with an output-referred 1dB-compression point of 1.6dBm. The measured gain of PA is 19 dB with 3 dB-bandwidth ranging from 120 GHz to 140 GHz. The chip occupies an area of 795µm × 410µm.

Keywords: mmWave communication system, power amplifiers, 22FDX, D-Band, cross-coupled capacitive neutralization

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Authors: Pinghe Wang

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In this paper, we demonstrate a tunable long-cavity passive mode-locked fiber laser. The mode locker is a nonlinear amplifying loop mirror (NALM). The cavity frequency of the laser is 465 kHz because that 404m SMF is inserted in the cavity. A tunable bandpass filter with ~1nm 3dB bandwidth is inserted into the cavity to realize tunable mode locking. The passive mode-locked laser at a fixed wavelength is investigated in detail. The experimental results indicate that the laser operates in dissipative soliton resonance (DSR) region. When the pump power is 400mW, the laser generates the rectangular pulses with 10.58 ns pulse duration, 70.28nJ single-pulse energy. When the pump power is 400mW, the laser keeps stable mode locking status in the range from 1523.4nm to 1575nm. During the whole tuning range, the SNR, the pulse duration, the output power and single pulse energy have a little fluctuation because that the gain of the EDF changes with the wavelength.

Keywords: fiber laser, dissipative soliton resonance, mode locking, tunable

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Authors: F. Rahmani, F. Razaghian, A. R. Kashaninia

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This article proposes a new method for application in communication circuit systems that increase efficiency, PAE, output power and gain in the circuit. The proposed method is based on a combination of switching class-E and class-J and has been termed class-EJ. This method was investigated using both theory and simulation to confirm ~72% PAE and output power of > 39 dBm. The combination and design of the proposed power amplifier accrues gain of over 15dB in the 2.9 to 3.5 GHz frequency bandwidth. This circuit was designed using MOSFET and high power transistors. The load- and source-pull method achieved the best input and output networks using lumped elements. The proposed technique was investigated for fundamental and second harmonics having desirable amplitudes for the output signal.

Keywords: power amplifier (PA), high power, class-J and class-E, high efficiency

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Authors: Azam Salimi, Majid Delshad

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This paper presents a modified design of a sliding mode controller based on fuzzy logic for a New ZVThigh step up DC-DC Converter . Here a proportional - integral (PI)-type current mode control is employed and a sliding mode controller is designed utilizing fuzzy algorithm. Sliding mode controller guarantees robustness against all variations and fuzzy logic helps to reduce chattering phenomenon due to sliding controller, in that way efficiency increases and error, voltage and current ripples decreases. The proposed system is simulated using MATLAB / SIMULINK. This model is tested under variations of input and reference voltages and it was found that in comparison with conventional sliding mode controllers they perform better.

Keywords: switching mode power supplies, DC-DC converters, sliding mode control, robustness, fuzzy control, current mode control, non-linear behavior

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Authors: Agung Budi Muljono, I Made Ginarsa, I Made Ari Nrartha

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A large-scale power system (LSPS) consists of two or more sub-systems connected by inter-connecting transmission. Loading pattern on an LSPS always changes from time to time and varies depend on consumer need. The serious instability problem is appeared in an LSPS due to load fluctuation in all of the bus. Adaptive neuro-fuzzy inference system (ANFIS)-based power system stabilizer (PSS) is presented to cover the stability problem and to enhance the stability of an LSPS. The ANFIS control is presented because the ANFIS control is more effective than Mamdani fuzzy control in the computation aspect. Simulation results show that the presented PSS is able to maintain the stability by decreasing peak overshoot to the value of −2.56 × 10−5 pu for rotor speed deviation Δω2−3. The presented PSS also makes the settling time to achieve at 3.78 s on local mode oscillation. Furthermore, the presented PSS is able to improve the peak overshoot and settling time of Δω3−9 to the value of −0.868 × 10−5 pu and at the time of 3.50 s for inter-area oscillation.

Keywords: ANFIS, large-scale, power system, PSS, stability enhancement

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Authors: C. S Lee, W. C. Hsu, H. Y. Liu, C. J. Lin, S. C. Yao, Y. T. Shen, Y. C. Lin

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In₀.₁₈Al₀.₈₂N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) having Al₂O₃ gate-dielectric and backside metal-trench structure are investigated. The Al₂O₃ gate oxide was formed by using a cost-effective non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. In order to enhance the heat dissipation efficiency, metal trenches were etched 3-µm deep and evaporated with a 150-nm thick Ni film on the backside of the Si substrate. The present In₀.₁₈Al₀.₈₂N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain-source current density (IDS, max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing (GVS) of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 10⁸ (7.4 × 10⁴), subthreshold swing (SS) of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Gₐ) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are obtained. Superior breakdown and RF power performances are achieved. The present In₀.₁₈Al₀.₈₂N/AlN/GaN MOS-HFET design with backside metal-trench is advantageous for high-power circuit applications.

Keywords: backside metal-trench, InAlN/AlN/GaN, MOS-HFET, non-vacuum ultrasonic spray pyrolysis deposition

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling

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Authors: Juanita, B. Kombaitan, Iwan Pratoyo Kusumantoro

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The traditional mode is a non-motorized vehicle powered by human or animal power. The objective of the study was to define the strategy of using traditional modes by the framework of sustainable urban transport in support of urban tourism activities. The study of the traditional mode does not include a modified mode using the engine power as motor tricycles are often called ‘bentor ‘in Indonesia. The use of non-motorized traditional mode in Indonesia has begun to shift, and its use began to be eliminated by the change of propulsion using the machine. In an effort to push back the use of traditional mode one of them with tourism activities. Strategies for the use of traditional modes within the framework of sustainable urban transport are seen from three dimensions: social, economic and environmental. The social dimension related to accessibility and livability, an economic dimension related to traditional modes can promote products and tourist attractions, while the environmental dimension related to the needs of the users/groups with respect to safety, comfort. The traditional mode is rarely noticed by the policy makers, and public opinion in its use needs attention. The involvement of policy-making between stakeholders and the community is needed in the development of sustainable traditional mode strategies in support of urban tourism activities.

Keywords: traditional mode, sustainable, urban, transportation

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Authors: Zine Souhila Rached, Mazari Benyounes Bouzid, Mohamed Amine, Allaoui Tayeb

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Wind energy has many advantages, it does not pollute and it is an inexhaustible source. However, its high cost is a major constraint, especially on the less windy sites. The purpose of wind energy systems is to maximize energy efficiency, and extract maximum power from the wind speed. In other words, having a power coefficient is maximum and therefore the maximum power point tracking. In this case, the MPPT control becomes important.To realize this control, strategy conventional proportional and integral (PI) controller is usually used. However, this strategy cannot achieve better performance. This paper proposes a robust control of a turbine which optimizes its production, that is improve the quality and energy efficiency, namely, a strategy of sliding mode control. The proposed sliding mode control strategy presents attractive features such as robustness to parametric uncertainties of the turbine; the proposed sliding mode control approach has been simulated on three-blade wind turbine. The simulation result under Matlab\Simulink has validated the performance of the proposed MPPT strategy.

Keywords: wind turbine, maximum power point tracking, sliding mode, energy conversion systems

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Authors: Ata Khorami, Mohammad Sharifkhani

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In the dynamic comparators, the pre-amplifier amplifies the input differential voltage and when the output Vcm of the pre-amplifier becomes larger than Vth of the latch input transistors, the latch is activated and finalizes the comparison. As a result, the pre-amplification delay is fixed to a value and cannot be set at the minimum required delay, thus, significant power and delay are imposed. In this paper, a novel structure is proposed through which the pre-amplification delay can be set at any low value saving power and time. Simulations show that using the proposed structure, by setting the pre-amplification delay at the minimum required value the power and comparison delay can be reduced by 55% and 100ps respectively.

Keywords: dynamic comparator, low power comparator, analog to digital converter, pre-amplification delay

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Authors: Abdellah Boualouch, Ahmed Essadki, Tamou Nasser, Ali Boukhriss, Abdellatif Frigui

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This paper presents a power control for a Doubly Fed Induction Generator (DFIG) using in Wind Energy Conversion System (WECS) connected to the grid. The proposed control strategy employs two nonlinear controllers, Backstipping (BSC) and sliding-mode controller (SMC) scheme to directly calculate the required rotor control voltage so as to eliminate the instantaneous errors of active and reactive powers. In this paper the advantages of BSC and SMC are presented, the performance and robustness of this two controller’s strategy are compared between them. First, we present a model of wind turbine and DFIG machine, then a synthesis of the controllers and their application in the DFIG power control. Simulation results on a 1.5MW grid-connected DFIG system are provided by MATLAB/Simulink.

Keywords: backstipping, DFIG, power control, sliding-mode, WESC

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Authors: Yanan Zhu

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Based on the previous work about the influence mechanism of the mobility difference of phenyl and thienyl substituent semiconductors, we have made further exploration towards to design high-performance organic thin-film transistors. The substituent groups effect plays a significant role in materials properties and device performance as well. For the theoretical study, simulation of materials property and crystal packing can supply scientific guidance for materials synthesis in experiments. This time, we have taken the computational methods to design a new material substituent with furan groups, which are the potential to be used in organic thin-film transistors and organic single-crystal transistors. The reorganization energy has been calculated and much lower than 2,6-diphenyl anthracene (DPAnt), which performs large mobility as more than 30 cm²V⁻¹s⁻¹. Moreover, the other important parameter, charge transfer integral is larger than DPAnt, which suggested the furan substituent material may get a much better charge transport data. On the whole, the mechanism investigation based on phenyl and thienyl assisted in designing novel materials with furan substituent, which is predicted to be an outperformed organic field-effect transistors.

Keywords: theoretical calculation, mechanism, mobility, organic transistors

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Authors: N. Ould cherchali, M. S. Boucherit, L. Barazane, A. Morsli

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Photovoltaic power is widely used to supply isolated or unpopulated areas (lighting, pumping, etc.). Great advantage is that this source is inexhaustible, it offers great safety in use and it is clean. But the dynamic models used to describe a photovoltaic system are complicated and nonlinear and due to nonlinear I-V and P–V characteristics of photovoltaic generators, a maximum power point tracking technique (MPPT) is required to maximize the output power. In this paper, two online techniques of maximum power point tracking using robust controller for photovoltaic systems are proposed, the first technique use fuzzy logic controller (FLC) and the second use sliding mode controller (SMC) for photovoltaic systems. The two maximum power point tracking controllers receive the partial derivative of power as inputs, and the output is the duty cycle corresponding to maximum power. A Photovoltaic generator with Boost converter is developed using MATLAB/Simulink to verify the preferences of the proposed techniques. SMC technique provides a good tracking speed in fast changing irradiation and when the irradiation changes slowly or is constant the panel power of FLC technique presents a much smoother signal with less fluctuations.

Keywords: fuzzy logic controller, maximum power point, photovoltaic system, tracker, sliding mode controller

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Authors: J. Ritonja, R. Brezovnik, M. Petrun, B. Polajžer

Abstract:

Many modern synchronous generators in power systems are extremely weakly damped. The reasons are cost optimization of the machine building and introduction of the additional control equipment into power systems. Oscillations of the synchronous generators and related stability problems of the power systems are harmful and can lead to failures in operation and to damages. The only useful solution to increase damping of the unwanted oscillations represents the implementation of the power system stabilizers. Power system stabilizers generate the additional control signal which changes synchronous generator field excitation voltage. Modern power system stabilizers are integrated into static excitation systems of the synchronous generators. Available commercial power system stabilizers are based on linear control theory. Due to the nonlinear dynamics of the synchronous generator, current stabilizers do not assure optimal damping of the synchronous generator’s oscillations in the entire operating range. For that reason the use of the robust power system stabilizers which are convenient for the entire operating range is reasonable. There are numerous robust techniques applicable for the power system stabilizers. In this paper the use of sliding mode control for synchronous generator stability improvement is studied. On the basis of the sliding mode theory, the robust power system stabilizer was developed. The main advantages of the sliding mode controller are simple realization of the control algorithm, robustness to parameter variations and elimination of disturbances. The advantage of the proposed sliding mode controller against conventional linear controller was tested for damping of the synchronous generator oscillations in the entire operating range. Obtained results show the improved damping in the entire operating range of the synchronous generator and the increase of the power system stability. The proposed study contributes to the progress in the development of the advanced stabilizer, which will replace conventional linear stabilizers and improve damping of the synchronous generators.

Keywords: control theory, power system stabilizer, robust control, sliding mode control, stability, synchronous generator

Procedia PDF Downloads 224

Authors: B. Gopal, Pannala Krishna Murthy, G. N. Sreenivas

Abstract:

The increasing demand of electric power is giving an emphasis on the need for the maximum utilization of renewable energy sources. On the other hand maintaining power quality to satisfaction of utility is an essential requirement. In this paper the design aspects of a Unified Power Quality Conditioner integrated with photovoltaic system in a distributed generation is presented. The proposed system consist of series inverter, shunt inverter are connected back to back on the dc side and share a common dc-link capacitor with Distributed Generation through a boost converter. The primary task of UPQC is to minimize grid voltage and load current disturbances along with reactive and harmonic power compensation. In addition to primary tasks of UPQC, other functionalities such as compensation of voltage interruption and active power transfer to the load and grid in both islanding and interconnected mode have been addressed. The simulation model is design in MATLAB/ Simulation environment and the results are in good agreement with the published work.

Keywords: distributed generation (DG), interconnected mode, islanding mode, maximum power point tracking (mppt), power quality (PQ), unified power quality conditioner (UPQC), photovoltaic array (PV)

Procedia PDF Downloads 507