Search results for: power amplifiers

Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E, and F are the main techniques for realizing power amplifiers. An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), gallium nitride (GaN), Agilent’s Advanced Design System (ADS), lumped elements

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity, and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: LDMOS, amplifier, back-off, bias circuit

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Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier

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Authors: Divya Sisodiya, Deepika Sipal

Abstract:

Optical wireless communication (OWC) is a relatively new technology in optical communication systems that allows for high-speed wireless optical communication. This research focuses on developing a cost-effective OWC system using a hybrid configuration of optical amplifiers. In addition to using EDFA amplifiers, a comparison study was conducted to determine which modulation technique is more effective for communication. This research examines the performance of an OWC system based on ASK and PSK modulation techniques by varying OWC parameters under various atmospheric conditions such as rain, mist, haze, and snow. Finally, the simulation results are discussed and analyzed.

Keywords: OWC, bit error rate, amplitude shift keying, phase shift keying, attenuation, amplifiers

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Authors: Pejman Hosseinioun, Ali Safari, Hamed Sarbazi

Abstract:

Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising material for future high-speed nanoelectronics due to its intrinsic superior carrier mobility and very high saturation velocity. These exceptional carrier transport properties suggest that graphene field effect transistors (G-FETs) can potentially outperform other FET technologies. In this paper, detailed discussions are introduced for Graphene Transistors Based Microwave Amplifiers.

Keywords: graphene, microwave FETs, microwave amplifiers, transistors

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Authors: Meng-Jie Hsiao, Cam Nguyen

Abstract:

Wide-band devices in Ku band (12-18 GHz) and K band (18-27 GHz) have received significant attention for high-data-rate communications and high-resolution sensing. Especially, devices operating around 24 GHz is attractive due to the 24-GHz unlicensed applications. One of the most important components in RF systems is power amplifier (PA). Various PAs have been developed in the Ku and K bands on GaAs, InP, and silicon (Si) processes. Although the PAs using GaAs or InP process could have better power handling and efficiency than those realized on Si, it is very hard to integrate the entire system on the same substrate for GaAs or InP. Si, on the other hand, facilitates single-chip systems. Hence, good PAs on Si substrate are desirable. Especially, Si-based PA having good linearity is necessary for next generation communication protocols implemented on Si. We report a 16.5 to 25.5 GHz Si-based PA having flat saturated power of 19.5 ± 1.5 dBm, output 1-dB power compression (OP1dB) of 16.5 ± 1.5 dBm, and 15-23 % power added efficiency (PAE). The PA consists of a drive amplifier, two main amplifiers, and lump-element Wilkinson power divider and combiner designed and fabricated in TowerJazz 0.18µm SiGe BiCMOS process having unity power gain frequency (fMAX) of more than 250 GHz. The PA is realized as a cascode amplifier implementing both heterojunction bipolar transistor (HBT) and n-channel metal–oxide–semiconductor field-effect transistor (NMOS) devices for gain, frequency response, and linearity consideration. Particularly, a body-floating technique is utilized for the NMOS devices to improve the voltage swing and eliminate parasitic capacitances. The developed PA has measured flat gain of 20 ± 1.5 dB across 16.5-25.5 GHz. At 24 GHz, the saturated power, OP1dB, and maximum PAE are 20.8 dBm, 18.1 dBm, and 23%, respectively. Its high performance makes it attractive for use in Ku/K-band, especially 24 GHz, communication and radar systems. This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors.

Keywords: power amplifiers, amplifiers, communication systems, radar systems

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Authors: Mehmet Nefes, Selman Demirel, Hasan H. Ertok, Cenk Sen

Abstract:

A typical reliability engineering problem regarding communication satellites has been considered to determine redundancy allocation scheme of power amplifiers within payload transponder module, whose dominant function is to amplify power levels of the received signals from the Earth, through maximizing reliability against mass, power, and other technical limitations. Adding each redundant power amplifier component increases not only reliability but also hardware, testing, and launch cost of a satellite. This study investigates a multi-objective approach used in order to solve Redundancy Allocation Problem (RAP) for a communication satellite payload transponder, focusing on design cost due to redundancy and reliability factors. The main purpose is to find the optimum power amplifier redundancy configuration satisfying reliability and capacity thresholds simultaneously instead of analyzing respectively or independently. A mathematical model and calculation approach are instituted including objective function definitions, and then, the problem is solved analytically with different input parameters in MATLAB environment. Example results showed that payload capacity and failure rate of power amplifiers have remarkable effects on the solution and also processing time.

Keywords: communication satellite payload, multi-objective optimization, redundancy allocation problem, reliability, transponder

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Authors: Karandeep Kaur

Abstract:

This paper presents the design of power amplifier (PA) for mmWave communication systems. The designed amplifier uses GlobalFoundries 22 FDX technology and works at an operational frequency of 140 GHz in the D-Band. With a supply voltage of 0.8V for the super low threshold voltage transistors, the amplifier is biased in class AB and has a total current consumption of 50 mA. The measured saturated output power from the power amplifier is 5.6 dBm with an output-referred 1dB-compression point of 1.6dBm. The measured gain of PA is 19 dB with 3 dB-bandwidth ranging from 120 GHz to 140 GHz. The chip occupies an area of 795µm × 410µm.

Keywords: mmWave communication system, power amplifiers, 22FDX, D-Band, cross-coupled capacitive neutralization

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Authors: A. Anitha, M. Aishwariya

Abstract:

The realization of truly ubiquitous wireless sensor networks (WSN) demands Ultra-low power wireless communication capability. Because the radio transceiver in a wireless sensor node consumes more power when compared to the computation part it is necessary to reduce the power consumption. Hence, a low power transceiver is designed and implemented in a 120 nm CMOS technology for wireless sensor nodes. The power consumption of the transceiver is reduced still by maintaining the sensitivity. The transceiver designed combines the blocks including differential oscillator, mixer, envelope detector, power amplifiers, and LNA. RF signal modulation and demodulation is carried by On-Off keying method at 2.4 GHz which is said as ISM band. The transmitter demonstrates an output power of 2.075 mW while consuming a supply voltage of range 1.2 V-5.0 V. Here the comparison of LNA and power amplifier is done to obtain an amplifier which produces a high gain of 1.608 dB at receiver which is suitable to produce a desired sensitivity. The multistage RF amplifier is used to improve the gain at the receiver side. The power dissipation of the circuit is in the range of 0.183-0.323 mW. The receiver achieves a sensitivity of about -95 dBm with data rate of 1 Mbps.

Keywords: CMOS, envelope detector, ISM band, LNA, low power electronics, PA, wireless transceiver

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Authors: Kyoungwoon Kim, Cuong Huynh, Cam Nguyen

Abstract:

Exploding demands for more data, faster data transmission speed, less interference, more users, more wireless devices, and better reliable service-far exceeding those provided in the current mobile communications networks in the RF spectrum below 6 GHz-has led the wireless communication industry to focus on higher, previously unallocated spectrums. High frequencies in RF spectrum near (around 28 GHz) or within the millimeter-wave regime is the logical solution to meet these demands. This high-frequency RF spectrum is of increasingly important for wireless communications due to its large available bandwidths that facilitate various applications requiring large-data high-speed transmissions, reaching up to multi-gigabit per second, of vast information. It also resolves the traffic congestion problems of signals from many wireless devices operating in the current RF spectrum (below 6 GHz), hence handling more traffic. Consequently, the wireless communication industries are moving towards 5G (fifth generation) for next-generation communications such as mobile phones, autonomous vehicles, virtual reality, and the Internet of Things (IoT). The U.S. Federal Communications Commission (FCC) proved on 14th July 2016 three frequency bands for 5G around 28, 37 and 39 GHz. We present some silicon-based RFIC power amplifiers (PA) for possible implementation for 5G wireless communications around 28, 37 and 39 GHz. The 16.5-28 GHz PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4±1.2 dBm across 16.5-28 GHz. The 25.5/37-GHz PA exhibits gain of 21.4 and 17 dB, and maximum output power of 16 and 13 dBm at 25.5 and 37 GHz, respectively, in the single-band mode. In the dual-band mode, the maximum output power is 13 and 9.5 dBm at 25.5 and 37 GHz, respectively. The 10-19/23-29/33-40 GHz PA has maximum output powers of 15, 13.3, and 13.8 dBm at 15, 25, and 35 GHz, respectively, in the single-band mode. When this PA is operated in dual-band mode, it has maximum output powers of 11.4/8.2 dBm at 15/25 GHz, 13.3/3 dBm at 15/35 GHz, and 8.7/6.7 dBm at 25/35 GHz. In the tri-band mode, it exhibits 8.8/5.4/3.8 dBm maximum output power at 15/25/35 GHz. Acknowledgement: This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors

Keywords: Microwaves, Millimeter waves, Power Amplifier, Wireless communications

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Authors: Zakarya Kourdi, Mohammed Khaouani, Benyounes Bouazza, Ahlam Guen-Bouazza, Amine Boursali

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In this paper, we have evaluated the thermal effect for high electron mobility transistors (HEMTs) heterostructure InAlN/GaN with a gate length 30nm high-performance. It also shows the analysis and simulated these devices, and how can be used in different application. The simulator Tcad-Silvaco software has used for predictive results good for the DC, AC and RF characteristic, Devices offered max drain current 0.67A; transconductance is 720 mS/mm the unilateral power gain of 180 dB. A cutoff frequency of 385 GHz, and max frequency 810 GHz These results confirm the feasibility of using HEMTs with InAlN/GaN in high power amplifiers, as well as thermal places.

Keywords: HEMT, Thermal Effect, Silvaco, InAlN/GaN

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Authors: Shreyas Srinivas Rangan, Jurgis Porins

Abstract:

The internet traffic has increased exponentially due to the high demand for data rates by the users, and the constantly increasing metro networks and access networks are focused on improving the maximum transmit distance of the long-reach optical networks. One of the common methods to improve the maximum transmit distance of the long-reach optical networks at the component level is to use broadband optical amplifiers. The Erbium Doped Fiber Amplifier (EDFA) provides high amplification with low noise figure but due to the characteristics of EDFA, its operation is limited to C-band and L-band. In contrast, the Raman amplifier exhibits a wide amplification spectrum, and negative noise figure values can be achieved. To obtain such results, high powered pumping sources are required. Operating Raman amplifiers with such high-powered optical sources may cause fire hazards and it may damage the optical system. In this paper, we implement a hybrid optical amplifier configuration. EDFA and Raman amplifiers are used in this hybrid setup to combine the advantages of both EDFA and Raman amplifiers to improve the reach of the system. Using this setup, we analyze the maximum transmit distance of the network by obtaining a correlation diagram between the length of the single-mode fiber (SMF) and the Bit Error Rate (BER). This hybrid amplifier configuration is implemented in a Wavelength Division Multiplexing (WDM) system with a BER of 10⁻⁹ by using NRZ modulation format, and the gain uniformity noise ratio (signal-to-noise ratio (SNR)), the efficiency of the pumping source, and the optical signal gain efficiency of the amplifier are studied experimentally in a mathematical modelling environment. Numerical simulations were implemented in RSoft OptSim simulation software based on the nonlinear Schrödinger equation using the Split-Step method, the Fourier transform, and the Monte Carlo method for estimating BER.

Keywords: Raman amplifier, erbium doped fibre amplifier, bit error rate, hybrid optical amplifiers

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The coaxial transformer-coupled push-pull circuitry has been used widely in HF and VHF amplifiers for many decades without significant changes in the topology of the transformers. Basic changes over the years concerned the construction and turns ratio of the transformers as has been imposed upon the newer technologies active devices demands. The balun transmission line transformers applied in push-pull amplifiers enable input/output impedance transformation, but are mainly used to convert the balanced output into unbalanced and the input unbalanced into balanced. A simple and affordable alternative solution over the traditional coaxial transformer is the coreless planar balun. A key advantage over the traditional approach lies in the high specifications repeatability; simplifying the amplifier construction requirements as the planar balun constitutes an integrated part of the PCB copper layout. This paper presents the performance analysis of a planar LDMOS MRFE6VP5600 Push-Pull amplifier that enables robust operation in Band III, DVB-T, DVB-T2 standards but functions equally well in Band II, for DRM+ new generation transmitters.

Keywords: amplifier, balun, complex impedance, LDMOS, planar-transformers

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Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

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In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: optical amplifiers, EDFA, L-band, optical networks

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Authors: Inderpreet Kaur, Ravinder Pal Singh, Kamal Kant Sharma

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This paper addresses the different configurations used of optical amplifiers with 16 channels in Wavelength Division Multiplexed system. The systems with 16 channels have been simulated for evaluation of various parameters; Bit Error Rate, Quality Factor, for threshold values for a range of wavelength from 1471 nm to 1611 nm. Comparison of various combination of configurations have been analyzed with EDFA and FRA but EDFA-FRA configuration performance has been found satisfactory in terms of performance indices and stable region. The paper also compared various parameters quantized with different configurations individually. It has been found that Q factor has high value with less value of BER and high resolution for EDFA-FRA configuration.

Keywords: EDFA, FRA, WDM, Q factor, BER

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Authors: Daniel P. Clayton, Edward A. Ball

Abstract:

This paper describes an investigation into the isolation characteristics and bandwidth performance of RF combiners that are used as part of Chireix PA architectures, designed for use in the X-Band range of frequencies. Combiner designs investigated are the typical Chireix and Wilkinson configurations which also include simulation of the Wilkinson using manufacturer’s data for the isolation resistor. Another simulation was the less common approach of using a Branchline coupler to form the combiner, as well as simulation results from adding an additional stage. This paper presents the findings of this investigation and compares the bandwidth performance and isolation characteristics to determine suitability.

Keywords: bandwidth, Chireix, couplers, outphasing, power amplifiers, Wilkinson, X-Band

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Authors: Phanumas Khumsat, Chalermchai Janmane

Abstract:

Low-voltage instrumentation amplifier has been proposed for 3-lead electrocardiogram measurement system. The circuit’s interference rejection technique is based upon common-mode feed-forwarding where common-mode currents have cancelled each other at the output nodes. The common-mode current for cancellation is generated by means of common-mode sensing and emitter or source followers with resistors employing only one transistor. Simultaneously this particular transistor also provides common-mode feedback to the patient’s right/left leg to further reduce interference entering the amplifier. The proposed designs have been verified with simulations in 0.18-µm CMOS process operating under 1.0-V supply with CMRR greater than 80dB. Moreover ECG signals have experimentally recorded with the proposed instrumentation amplifiers implemented from discrete BJT (BC547, BC558) and MOSFET (ALD1106, ALD1107) transistors working with 1.5-V supply.

Keywords: electrocardiogram, common-mode feedback, common-mode feedforward, communication engineering

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Authors: Abdelhamid Louliej, Younes Jabrane

Abstract:

Satellites are becoming indispensable assets to fifth-generation (5G) new radio architecture, complementing wireless and terrestrial communication links. The combination of satellites and 5G architecture allows consumers to access all next-generation services anytime, anywhere, including scenarios, like traveling to remote areas (without coverage). Nevertheless, this solution faces several challenges, such as a significant propagation delay, Doppler frequency shift, and high Peak-to-Average Power Ratio (PAPR), causing signal distortion due to the non-linear saturation of the High-Power Amplifier (HPA). To compensate for HPA non-linearity in 5G satellite transmission, an efficient pre-distorter scheme using Neural Networks (NN) is proposed. To assess the proposed NN pre-distorter, two types of HPA were investigated: Travelling Wave Tube Amplifier (TWTA) and Solid-State Power Amplifier (SSPA). The results show that the NN pre-distorter design presents EVM improvement by 95.26%. NMSE and ACPR were reduced by -43,66 dB and 24.56 dBm, respectively. Moreover, the system suffers no degradation of the Bit Error Rate (BER) for TWTA and SSPA amplifiers.

Keywords: satellites, 5G, neural networks, HPA, TWTA, SSPA, EVM, NMSE, ACPR

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Authors: Mantas Sakalas, Paulius Sakalas

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This paper presents an analysis and design of a ultrawideband 1.8GHz to 43GHz Low Noise Amplifier (LNA) in 0.1 μm Galium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology. The feedback based bandwidth extension techniques is analyzed and based on the outcome, a two stage LNA is designed. The impedance fine tuning is implemented by using Transmission Line (TL) structures. The measured performance shows a good agreement with simulation results and an outstanding wideband noise matching. The measured small signal gain was 12 dB, whereas a 3 dB gain flatness in range from 1.8 - 43 GHz was reached. The noise figure was below 4 dB almost all over the entire frequency band of 1.8GHz to 43GHz, the output power at 1 dB compression point was 6 dBm and the DC power consumption was 95 mW. To the best knowledge of the authors the designed LNA outperforms the State of the Art (SotA) reported LNA designs in terms of combined parameters of noise figure within the addressed ultra-wide 3 dB bandwidth, linearity and DC power consumption.

Keywords: feedback amplifiers, GaAs pHEMT, monolithic microwave integrated circuit, LNA, noise matching

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Authors: Richard Mitchell, Robert Mitchell, Thai Duong, Kyungbin Bae, Daegon Kim, Youngsub Lee, Inho Kim, Inho Park, Hyungseok Lee

Abstract:

Although X-band radar is commonly used to measure the properties of ocean waves, the use of a higher frequency has several advantages, such as increased backscatter coefficient, better Doppler sensitivity, lower power, and a smaller package. A low-power Ku-band radar system was developed to demonstrate these advantages. It is fully coherent, and it interleaves short and long pulses to achieve a transmit duty ratio of 25%, which makes the best use of solid-state amplifiers. The range scales are 2 km, 4 km, and 8 km. The minimum range is 100 m, 200 m, and 400 m for the three range scales, and the range resolution is 4 m, 8 m, and 16 m for the three range scales. Measurements of the significant wave height, wavelength, wave period, and wave direction have been made using traditional 3D-FFT methods. Radar and ultrasonic sensor results collected over an extended period of time at a coastal site in South Korea are presented.

Keywords: measurement of ocean wave parameters, Ku-band radar, coherent radar, compact radar

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Authors: Theodore Grosch, Felipe Koji Godinho Hoshino

Abstract:

In wireless communications, 3GPP LTE is one of the solutions to meet the greater transmission data rate demand. One issue inherent to this technology is the PAPR (Peak-to-Average Power Ratio) of OFDM (Orthogonal Frequency Division Multiplexing) modulation. This high PAPR affects the efficiency of power amplifiers. One approach to mitigate this effect is the Crest Factor Reduction (CFR) technique. In this work, we simulate the impact of Hard Limited Clipping Crest Factor Reduction technique on BER (Bit Error Rate) in OFDM based Systems. In general, the results showed that CFR has more effects on higher digital modulation schemes, as expected. More importantly, we show the worst-case degradation due to CFR on QPSK, 16QAM, and 64QAM signals in a linear system. For example, hard clipping of 9 dB results in a 2 dB increase in signal to noise energy at a 1% BER for 64-QAM modulation.

Keywords: bit error rate, crest factor reduction, OFDM, physical layer simulation

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Authors: Surinder Singh, Adish Bindal

Abstract:

The effects of the pumping wavelength and their power on the gain flattening of a fiber Raman amplifier (FRA) are investigated. The multi-wavelength pumping scheme is utilized to achieve gain flatness in FRA. It is proposed that gain flatness becomes better with increase in number of pumping wavelengths applied. We have achieved flat gain with 0.27 dB fluctuation in a spectral range of 1475-1600 nm for a Raman fiber length of 10 km by using six pumps with wavelengths with in the 1385-1495 nm interval. The effect of multi-wavelength pumping scheme on gain saturation in FRA is also studied. It is proposed that gain saturation condition gets improved by using this scheme and this scheme is more useful for higher spans of Raman fiber length.

Keywords: FRA, WDM, pumping, flat gain

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Authors: Talip Turkmen

Abstract:

From the moment the first beats, the first step into the world mankind finds him in a struggle to survive. Most important case to win this fight is power. Power is one of the most common concepts which we encounter in our life. Mainly power is ability to reach desired results on someone else or ability to penetrate into the behavior of others. Throughout history merging technology and changing political trade-offs caused the change of concept of power. Receiving a state of multipolar new world order in the 21st century and increasing impacts of media have narrowed the limits of military power. With increasing globalization and peaceful diplomacy this gap, left by military power, has filled by soft power which has ability to persuade and attract. As concepts of power soft power also has not compromised yet. For that reason it is important to specify, sources of soft power, soft power strategies and limits of soft power. The purpose of this study was to analyze concept of soft power and importance of soft power in foreign relations. This project focuses on power, hard power and soft power relations, sources of soft power and strategies to gain soft power. Datas in this project was acquired from other studies on soft power and foreign relations. This paper was prepared in terms of concept and research techniques. As a result of data gained in this study the one of important topics in international relations is balance between soft power.

Keywords: soft power, foreign policy, national power, hard power

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Authors: A. S. Walkey, N. P. Patidar

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It is not always economical to provide reactive power using synchronous alternators. The cost of reactive power can be minimized by optimal placing of FACTS devices in power systems. In this paper a Particle Swarm Optimization- Sequential Quadratic Programming (PSO-SQP) algorithm is applied to minimize the cost of reactive power generation along with real power generation to alleviate the bus voltage violations. The effectiveness of proposed approach tested on IEEE-14 bus systems. In this paper in addition to synchronous generators, an opportunity of FACTS devices are also proposed to procure the reactive power demands in the power system.

Keywords: reactive power, reactive power cost, voltage security margins, capability curve, FACTS devices

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Authors: T. Mohammed Chikouche, K. Hartani

Abstract:

In order to solve the instantaneous power ripple and achieve better performance of direct power control (DPC) for a three-phase PWM rectifier, a control method is proposed in this paper. This control method is applied to overcome the instantaneous power ripple, to eliminate line current harmonics and therefore reduce the total harmonic distortion and to improve the power factor. A switching table is based on the analysis on the change of instantaneous active and reactive power, to select the optimum switching state of the three-phase PWM rectifier. The simulation result shows feasibility of this control method.

Keywords: power quality, direct power control, power ripple, switching table, unity power factor

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Authors: Serdal AKYUZ

Abstract:

The smart power is the use of soft and hard power together in consideration of existing circumstances. Soft power can be defined as the capability of changing perception of any target mass by employing policies based on legality. The hard power, generally, uses military and economic instruments which are the concrete indicator of general power comprehension. More than providing a balance between soft and hard power, smart power creates a proactive combination by assessing existing resources. Military targeting process (MTP), as stated in smart power methodology, benefits from a wide scope of lethal and non-lethal weapons to reach intended end state. The Smart powers components can be used in military targeting process similar to using of lethal or non-lethal weapons. This paper investigates the current use of Smart power concept, MTP and presents a new approach to MTP from smart power concept point of view.

Keywords: future security environment, hard power, military targeting process, soft power, smart power

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Authors: Mohamed Idris S. Abozaed, Suliman Mohamed Elrajoubi

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Researches and concerns in power quality gained significant momentum in the field of power electronics systems over the last two decades globally. This sudden increase in the number of concerns over power quality problems is a result of the huge increase in the use of non-linear loads. In this paper, power quality evaluation of some distribution networks at Misurata - Libya has been done using a power quality and energy analyzer (Fluke 437 Series II). The results of this evaluation are used to minimize the problems of power quality. The analysis shows the main power quality problems that exist and the level of awareness of power quality issues with the aim of generating a start point which can be used as guidelines for researchers and end users in the field of power systems.

Keywords: power quality disturbances, power quality evaluation, statistical analysis, electrical distribution networks

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Authors: J. S. Savier

Abstract:

Real power is the component power which is converted into useful energy whereas reactive power is the component of power which cannot be converted to useful energy but it is required for the magnetization of various electrical machineries. If the reactive power is compensated at the consumer end, the need for reactive power flow from generators to the load can be avoided and hence the overall power loss can be reduced. In this scenario, this paper presents a succinct method called JSS method for allocation of reactive power losses to consumers connected to radial distribution networks in a deregulated environment. The proposed method has the advantage that no assumptions are made while deriving the reactive power loss allocation method.

Keywords: deregulation, reactive power loss allocation, radial distribution systems, succinct method

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Authors: Ashima Rai

Abstract:

CATV transmission systems have altered from old cable based one-way analog video transmission to two ways hybrid fiber transmission. The use of optical fiber reduces the RF amplifiers in the transmission, high transmission power or lower fiber transmission losses are required to increase system capability. This paper evaluates and compares Distributed Feedback (DFB) laser and Vertical Cavity Surface Emitting Laser (VCSEL) for CATV transmission. The simulation results exhibit the better performer among both lasers taking into consideration the parameters chosen for evaluation.

Keywords: Distributed Feedback (DFB), Vertical Cavity Surface Emitting Laser (VCSEL), Community Access Television (CATV), Composite Second Order (CSO), Composite Triple Beat (CTB), RF

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Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

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We introduced an all-optical multi-casting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multi-casting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multi-casting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier

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