Search results for: semiconductor lasers
183 CMOS Positive and Negative Resistors Based on Complementary Regulated Cascode Topology with Cross-Coupled Regulated Transistors
Authors: Kittipong Tripetch, Nobuhiko Nakano
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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at ±0.9 V.Keywords: floating active resistor, complementary common gate, complementary regulated cascode, current mirror
Procedia PDF Downloads 259182 Non-Destructive Testing of Carbon Fiber Reinforced Plastic by Infrared Thermography Methods
Authors: W. Swiderski
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Composite materials are one answer to the growing demand for materials with better parameters of construction and exploitation. Composite materials also permit conscious shaping of desirable properties to increase the extent of reach in the case of metals, ceramics or polymers. In recent years, composite materials have been used widely in aerospace, energy, transportation, medicine, etc. Fiber-reinforced composites including carbon fiber, glass fiber and aramid fiber have become a major structural material. The typical defect during manufacture and operation is delamination damage of layered composites. When delamination damage of the composites spreads, it may lead to a composite fracture. One of the many methods used in non-destructive testing of composites is active infrared thermography. In active thermography, it is necessary to deliver energy to the examined sample in order to obtain significant temperature differences indicating the presence of subsurface anomalies. To detect possible defects in composite materials, different methods of thermal stimulation can be applied to the tested material, these include heating lamps, lasers, eddy currents, microwaves or ultrasounds. The use of a suitable source of thermal stimulation on the test material can have a decisive influence on the detection or failure to detect defects. Samples of multilayer structure carbon composites were prepared with deliberately introduced defects for comparative purposes. Very thin defects of different sizes and shapes made of Teflon or copper having a thickness of 0.1 mm were screened. Non-destructive testing was carried out using the following sources of thermal stimulation, heating lamp, flash lamp, ultrasound and eddy currents. The results are reported in the paper.Keywords: Non-destructive testing, IR thermography, composite material, thermal stimulation
Procedia PDF Downloads 259181 A Comparative Study on Optimized Bias Current Density Performance of Cubic ZnB-GaN with Hexagonal 4H-SiC Based Impatts
Authors: Arnab Majumdar, Srimani Sen
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In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p+pnn+ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×108 A/m2. The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×108 A/m2.Keywords: cubic ZnB-GaN, hexagonal 4H-SiC, double drift impatt diode, millimetre wave, optimised bias current density, wide band gap semiconductor
Procedia PDF Downloads 359180 Electrical and Magnetoelectric Properties of (y)Li0.5Ni0.7Zn0.05Fe2O4 + (1-y)Ba0.5Sr0.5TiO3 Magnetoelectric Composites
Authors: S. U. Durgadsimi, S. Chouguleb, S. Belladc
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(y) Li0.5Ni0.7Zn0.05Fe2O4 + (1-y) Ba0.5Sr0.5TiO3 magnetoelectric composites with y = 0.1, 0.3 and 0.5 were prepared by a conventional standard double sintering ceramic technique. X-ray diffraction analysis confirmed the phase formation of ferrite, ferroelectric and their composites. logρdc Vs 1/T graphs reveal that the dc resistivity decreases with increasing temperature exhibiting semiconductor behavior. The plots of logσac Vs logω2 are almost linear indicating that the conductivity increases with increase in frequency i.e, conductivity in the composites is due to small polaron hopping. Dielectric constant (έ) and dielectric loss (tan δ) were studied as a function of frequency in the range 100Hz–1MHz which reveals the normal dielectric behavior except the composite with y=0.1 and as a function of temperature at four fixed frequencies (i.e. 100Hz, 1KHz, 10KHz, 100KHz). ME voltage coefficient decreases with increase in ferrite content and was observed to be maximum of about 7.495 mV/cmOe for (0.1) Li0.5Ni0.7Zn0.05Fe2O4 + (0.9) Ba0.5Sr0.5TiO3 composite.Keywords: XRD, dielectric constant, dielectric loss, DC and AC conductivity, ME voltage coefficient
Procedia PDF Downloads 344179 Rapid Microwave-Enhanced Process for Synthesis of CdSe Quantum Dots for Large Scale Production and Manipulation of Optical Properties
Authors: Delele Worku Ayele, Bing-Joe Hwang
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A method that does not employ hot injection techniques has been developed for the size-tunable synthesis of high-quality CdSe quantum dots (QDs) with a zinc blende structure. In this environmentally benign synthetic route, which uses relatively less toxic precursors, solvents, and capping ligands, CdSe QDs that absorb visible light are obtained. The size of the as-prepared CdSe QDs and, thus, their optical properties can be manipulated by changing the microwave reaction conditions. The QDs are characterized by XRD, TEM, UV-vis, FTIR, time-resolved fluorescence spectroscopy, and fluorescence spectrophotometry. In this approach, the reaction is conducted in open air and at a much lower temperature than in hot injection techniques. The use of microwaves in this process allows for a highly reproducible and effective synthesis protocol that is fully adaptable for mass production and can be easily employed to synthesize a variety of semiconductor QDs with the desired properties. The possible application of the as-prepared CdSe QDs has been also assessed using deposition on TiO2 films.Keywords: CdSe QDs, Na2SeSO3, microwave (MW), oleic acid, mass production, average life time
Procedia PDF Downloads 709178 Hybrid PWM Techniques for the Reduction of Switching Losses and Voltage Harmonics in Cascaded Multilevel Inverters
Authors: Venkata Reddy Kota
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These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.Keywords: hybrid PWM techniques, cascaded multilevel inverters, switching loss minimization
Procedia PDF Downloads 616177 Rare-Earth Ions Doped Zirconium Oxide Layers for Optical and Photovoltaic Applications
Authors: Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Marek Godlewski
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Oxide layers doped with rare-earth (RE) ions in optimized way can absorb short (ultraviolet light), which will be converted to visible light by so-called down-conversion. Down-conversion mechanisms are usually exploited to modify the incident solar spectrum. In down conversion, multiple low-energy photons are generated to exploit the energy of one incident high-energy photon. These RE-doped oxide materials have attracted a great deal of attention from researchers because of their potential for optical manipulation in optical devices (detectors, temperature sensors, and compact solid-state lasers, light-emitting diodes), bio-analysis, medical therapy, display technologies, and light harvesting (such as in photovoltaic cells). The zirconium dioxide (ZrO2) doped RE ions (Eu, Tb, Ce) multilayer structures were tested as active layers, which can convert short wave emission to light in the visible range (the down-conversion mechanism). For these applications original approach of deposition ZrO2 layers using the Atomic Layer Deposition (ALD) method and doping these layers with RE ions using the spin-coating technique was used. ALD films are deposited at relatively low temperature (well below 250°C). This can be an effective method to achieve the white-light emission and to improve on this way light conversion efficiency, by an extension of absorbed spectral range by a solar cell material. Photoluminescence (PL), X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM) measurement are analyzed. The research was financially supported by the National Science Centre (decision No. DEC-2012/06/A/ST7/00398 and DEC- 2013/09/N/ST5/00901).Keywords: ALD, oxide layers, photovoltaics, thin films
Procedia PDF Downloads 269176 A Compact Extended Laser Diode Cavity Centered at 780 nm for Use in High-Resolution Laser Spectroscopy
Authors: J. Alvarez, J. Pimienta, R. Sarmiento
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Diode lasers working in free mode present different shifting and broadening determined by external factors such as temperature, current or mechanical vibrations, and they are not more useful in applications such as spectroscopy, metrology, and cooling of atoms, among others. Different configurations can reduce the spectral width of a laser; one of the most effective is to extend the optical resonator of the laser diode and use optical feedback either with the help of a partially reflective mirror or with a diffraction grating; this latter configuration is not only allowed to reduce the spectral width of the laser line but also to coarsely adjust its working wavelength, within a wide range typically ~ 10nm by slightly varying the angle of the diffraction grating. Two settings are commonly used for this purpose, the Littrow configuration and the Littmann Metcalf. In this paper, we present the design, construction, and characterization of a compact extended laser cavity in Littrow configuration. The designed cavity is compact and was machined on an aluminum block using computer numerical control (CNC); it has a mass of only 380 g. The design was tested on laser diodes with different wavelengths, 650nm, 780nm, and 795 nm, but can be equally efficient at other wavelengths. This report details the results obtained from the extended cavity working at a wavelength of 780 nm, with an output power of around 35mW and a line width of less than 1Mhz. The cavity was used to observe the spectrum of the corresponding Rubidium D2 line. By modulating the current and with the help of phase detection techniques, a dispersion signal with an excellent signal-to-noise ratio was generated that allowed the stabilization of the laser to a transition of the hyperfine structure of Rubidium with an integral proportional controller (PI) circuit made with precision operational amplifiers.Keywords: Littrow, Littman-Metcalf, line width, laser stabilization, hyperfine structure
Procedia PDF Downloads 227175 Photocatalytic Hydrogen Production from Butanol over Ag/TiO2
Authors: Thabelo Nelushi, Michael Scurrell, Tumelo Seadira
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Global warming is one of the most important environmental issues which arise from occurrence of gases such as carbon dioxide (CO2) and methane (CH4) in the atmosphere. Exposure to these greenhouse gases results in health risk. Hydrogen is regarded as an alternative energy source which is a clean energy carrier for the future. There are different methods to produce hydrogen such as steam reforming, coal gasification etc., however the challenge with these processes is that they emit CO and CO2 gases and are costly. Photocatalytic reforming is a substitute process which is fascinating due to the combination of solar energy and renewable sources and the use of semiconductor materials such as catalysts. TiO2 is regarded as the most promising catalysts. TiO2 nanoparticles prepared by hydrothermal method and Ag/TiO2 are being investigated for photocatalytic production of hydrogen from butanol. The samples were characterized by raman spectroscopy, TEM/SEM, XRD, XPS, EDAX, DRS and BET surface area. 2 wt% Ag-doped TiO2 nanoparticle showed enhanced hydrogen production compared to a non-doped TiO2. The results of characterization and photoactivity shows that TiO2 nanoparticles play a very important role in producing high hydrogen by utilizing solar irradiation.Keywords: butanol, hydrogen production, silver particles, TiO2 nanoparticles
Procedia PDF Downloads 210174 Improvement of Heat Dissipation Ability of Polyimide Composite Film
Authors: Jinyoung Kim, Jinuk Kwon, Haksoo Han
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Polyimide is widely used in electronic industries, and heat dissipation of polyimide film is important for its application in electric devices for high-temperature resistance heat dissipation film. In this study, we demonstrated a new way to increase heat dissipating rate by adding carbon black as filler. This type of polyimide composite film was produced by pyromellitic dianhydride (PMDA) and 4,4’-oxydianiline (ODA). Carbon black (CB) is added in different loading, shows increasing heat dissipation rate for increase of Carbon black. The polyimide-carbon black composite film is synthesized with high dissipation rate to ~8W∙m−1K−1. Its high thermal decomposition temperature and glass transition temperature were maintained with carbon filler verified by thermogravimetric analysis (TGA) and differential scanning calorimetric (DSC), the polyimidization reaction of polyi(amide-mide) was confirmed by Fourier transform infrared spectroscopy (FT-IR). The polyimide composite film with carbon black with high heat dissipating rate could be used in various applications such as computers, mobile phone industries, integrated circuits, coating materials, semiconductor etc.Keywords: polyimide, heat dissipation, electric device, filler
Procedia PDF Downloads 679173 Experimental Investigation on Activated Carbon Based Cryosorption Pump
Authors: K. B. Vinay, K. G. Vismay, S. Kasturirengan, G. A. Vivek
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Cryosorption pumps are considered to be safe, quiet and ultra-high vacuum production pumps which have their application from Semiconductor industries to ITER [International Thermonuclear Experimental Reactor] units. The principle of physisorption of gases over highly porous materials like activated charcoal at cryogenic temperatures (below -1500°C) is involved in determining the pumping speed of gases like Helium, Hydrogen, Argon and Nitrogen. This paper aims at providing detailed overview of development of Cryosorption pump which is the modern ultra-high vacuum pump and characterization of different activated charcoal materials that optimizes the performance of the pump. Different grades of charcoal were tested in order to determine the pumping speed of the pump and were compared with commercially available Varian cryopanel. The results for bare panel, bare panel with adhesive, cryopanel with pellets, and cryopanel with granules were obtained and compared. The comparison showed that cryopanel adhered with small granules gave better pumping speeds than large sized pellets.Keywords: adhesive, cryopanel, granules, pellets
Procedia PDF Downloads 425172 TiO2 Adsorbed on Cement Balls for Effective Photomineralization of Organic Pollutants under UV Light Irradiation
Authors: Tarun Jain, Lovnish Gupta, Soumen Basu
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Organic pollutants like phenols and organic dyes present in industrial waste water are posing a hazardous threat to aquatic ecosystem. Several measures have been adopted for the neutralization and photodecomposition of these harmful organic moieties, among these semiconductor photocatalysis has been provided a major thrust after the discovery of Honda-Fujishema effect. Present study demonstrates the adsorption of TiO2- P25 in nano size (~36 nm) on cement balls for effective photodegradation of Alizarin and penta chlorophenol (PCP) under UV light illumination. Triton-X was used as a stabilizer for effective adsorption of TiO2 on cement balls (TCB) followed by calcination at ~300oC for 4 h. The TCB’s were dispersed randomly in a self designed reactor for phototcatalytic performance as shown in scheme 1. The change in concentration of alizarin and PCP was observed under UV-Vis spectroscopy, PCP was detoxified within 40 min while alizarin photodecomposed within 15 min of UV light irradiation. Taking into consideration the go green slogan and future prospective this technique can be also utilized under visible light and on mass scale because this is an effective tool for environmental remediation and waste water treatment.Keywords: organic pollutants, TiO2 cement balls, photodegradation, UV light irradiation
Procedia PDF Downloads 262171 Fabrication of Hollow Germanium Spheres by Dropping Method
Authors: Kunal D. Bhagat, Truong V. Vu, John C. Wells, Hideyuki Takakura, Yu Kawano, Fumio Ogawa
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Hollow germanium alloy quasi-spheres of diameters 1 to 2 mm with a relatively smooth inner and outer surface have been produced. The germanium was first melted at around 1273 K and then exuded from a coaxial nozzle into an inert atmosphere by argon gas supplied to the inner nozzle. The falling spheres were cooled by water spray and collected in a bucket. The spheres had a horn type of structure on the outer surface, which might be caused by volume expansion induced by the density difference between solid and gas phase. The frequency of the sphere formation was determined from the videos to be about 133 Hz. The outer diameter varied in the range of 1.3 to 1.8 mm with a wall thickness in the range of 0.2 to 0.5 mm. Solid silicon spheres are used for spherical silicon solar cells (S₃CS), which have various attractive features. Hollow S₃CS promise substantially higher energy conversion efficiency if their wall thickness can be kept to 0.1–0.2 mm and the inner surface can be passivated. Our production of hollow germanium spheres is a significant step towards the production of hollow S₃CS with, we hope, higher efficiency and lower material cost than solid S₃CS.Keywords: hollow spheres, semiconductor, compound jet, dropping method
Procedia PDF Downloads 208170 The Investigation of the Impact of Process and Location Parameters in Warpage Study of Semiconductor Packages
Authors: Wheyming Song, Ssu-Ping Lin
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The primary advantage of package-on-package (PoP) packaging is that since it has less volume, it weighs less. But this is also related to its principal drawback, which is warpage. This research investigates how PoP package warpage patterns are affected by assembling process parameters, including substrate temperature, injection speed, injection temperature, and compound forces. We also investigate how warpage patterns are affected by the location of the silicon chip. The methodologies used in this research are design of experiment and warpage simulation via ANSYS. We propose a regression model to predict the warpage value as a function of substrate temperature, injection speed, injection temperature, and compound forces. Our results show that interaction effects exist between substrate temperature and compound forces and between injection speed and injection temperature. Therefore, determining the optimal values for substrate temperature, compound forces, injection speed, and injection temperature cannot be done individually. Also, our results show that the warpage patterns based on the location of silicon chips can be classified into 11 groups, with the largest warpage occurring at the left-most and right-most sides.Keywords: package-on-package, warpage, design of experiment, simulation
Procedia PDF Downloads 306169 Spectroscopic Studies of Dy³⁺ Ions in Alkaline-Earth Boro Tellurite Glasses for Optoelectronic Devices
Authors: K. Swapna
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A Series of Alkali-Earth Boro Tellurite (AEBT) glasses doped with different concentrations of Dy³⁺ ions have been prepared by using melt quenching technique and characterized through spectroscopic techniques such as optical absorption, excitation, emission and photoluminescence decay to understand their utility in optoelectronic devices such as lasers and white light emitting diodes (w-LEDs). Raman spectrum recorded for an undoped glass is used to measure the phonon energy of the host glass and various functional groups present in the host glass (AEBT). The intensities of the electronic transitions and the ligand environment around the Dy³⁺ ions were studied by applying Judd-Ofelt (J-O) theory to the recorded absorption spectra of the glasses. The evaluated J-O parameters are subsequently used to measure various radiative parameters such as transition probability (AR), radiative branching ratio (βR) and radiative lifetimes (τR) for the prominent fluorescent levels of Dy³⁺ ions in the as-prepared glasses. The luminescence spectra recorded at 387 nm excitation show three emission transitions (⁴F9/2→⁶H15/2 (blue), ⁴F9/2→⁶H13/2 (yellow) and ⁴F9/2 → ⁶H11/2 (red)) of which the yellow transition observed at 575 nm is found to be highly intense. The experimental branching ratio (βexp) and stimulated emission crosssection (σse) were measured from luminescence spectra. The experimental lifetimes (τexp) measured from the decay spectral profiles are combined with radiative lifetimes to measure quantum efficiencies of the as-prepared glasses. The yellow to blue intensity ratios and chromaticity color coordinates are found to vary with Dy³⁺ ion concentrations. The aforementioned results reveal that these glasses are aptly suitable for w-LEDs and laser devices.Keywords: glasses, J-O parameters, photoluminescence, I-H model
Procedia PDF Downloads 157168 Polymer Solar Cells Synthesized with Copper Oxide Nanoparticles
Authors: Nidal H. Abu-Zahra, Aruna P. Wanninayake
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Copper Oxide (CuO) is a p-type semiconductor with a band gap energy of 1.5 eV, this is close to the ideal energy gap of 1.4 eV required for solar cells to allow good solar spectral absorption. The inherent electrical characteristics of CuO nano particles make them attractive candidates for improving the performance of polymer solar cells when incorporated into the active polymer layer. The UV-visible absorption spectra and external quantum efficiency of P3HT/PC70BM solar cells containing different weight percentages of CuO nano particles showed a clear enhancement in the photo absorption of the active layer, this increased the power conversion efficiency of the solar cells by 24% in comparison to the reference cell. The short circuit current of the reference cell was found to be 5.234 mA/cm2 and it seemed to increase to 6.484 mA/cm2 in cells containing 0.6 mg of CuO NPs; in addition the fill factor increased from 61.15% to 68.0%, showing an enhancement of 11.2%. These observations suggest that the optimum concentration of CuO nano particles was 0.6 mg in the active layer. These significant findings can be applied to design high-efficiency polymer solar cells containing inorganic nano particles.Keywords: copper oxide nanoparticle, UV-visible spectroscopy, polymer solar cells, P3HT/PCBM
Procedia PDF Downloads 423167 Synthesis and Properties of Poly(N-(sulfophenyl)aniline) Nanoflowers and Poly(N-(sulfophenyl)aniline) Nanofibers/Titanium dioxide Nanoparticles by Solid Phase Mechanochemical and Their Application in Hybrid Solar Cell
Authors: Mazaher Yarmohamadi-Vasel, Ali Reza Modarresi-Alama, Sahar Shabzendedara
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Purpose/Objectives: The first purpose was synthesize Poly(N-(sulfophenyl)aniline) nanoflowers (PSANFLs) and Poly(N-(sulfophenyl)aniline) nanofibers/titanium dioxide nanoparticles ((PSANFs/TiO2NPs) by a solid-state mechano-chemical reaction and template-free method and use them in hybrid solar cell. Also, our second aim was to increase the solubility and the processability of conjugated nanomaterials in water through polar functionalized materials. poly[N-(4-sulfophenyl)aniline] is easily soluble in water because of the presence of polar groups of sulfonic acid in the polymer chain. Materials/Methods: Iron (III) chloride hexahydrate (FeCl3∙6H2O) were bought from Merck Millipore Company. Titanium oxide nanoparticles (TiO2, <20 nm, anatase) and Sodium diphenylamine-4-sulfonate (99%) were bought from Sigma-Aldrich Company. Titanium dioxide nanoparticles paste (PST-20T) was prepared from Sharifsolar Co. Conductive glasses coated with indium tin oxide (ITO) were bought from Xinyan Technology Co (China). For the first time we used the solid-state mechano-chemical reaction and template-free method to synthesize Poly(N-(sulfophenyl)aniline) nanoflowers. Moreover, for the first time we used the same technique to synthesize nanocomposite of Poly(N-(sulfophenyl)aniline) nanofibers and titanium dioxide nanoparticles (PSANFs/TiO2NPs) also for the first time this nanocomposite was synthesized. Examining the results of electrochemical calculations energy gap obtained by CV curves and UV–vis spectra demonstrate that PSANFs/TiO2NPs nanocomposite is a p-n type material that can be used in photovoltaic cells. Doctor blade method was used to creat films for three kinds of hybrid solar cells in terms of different patterns like ITO│TiO2NPs│Semiconductor sample│Al. In the following, hybrid photovoltaic cells in bilayer and bulk heterojunction structures were fabricated as ITO│TiO2NPs│PSANFLs│Al and ITO│TiO2NPs│PSANFs /TiO2NPs│Al, respectively. Fourier-transform infrared spectra, field emission scanning electron microscopy (FE-SEM), ultraviolet-visible spectra, cyclic voltammetry (CV) and electrical conductivity were the analysis that used to characterize the synthesized samples. Results and Conclusions: FE-SEM images clearly demonstrate that the morphology of the synthesized samples are nanostructured (nanoflowers and nanofibers). Electrochemical calculations of band gap from CV curves demonstrated that the forbidden band gap of the PSANFLs and PSANFs/TiO2NPs nanocomposite are 2.95 and 2.23 eV, respectively. I–V characteristics of hybrid solar cells and their power conversion efficiency (PCE) under 100 mWcm−2 irradiation (AM 1.5 global conditions) were measured that The PCE of the samples were 0.30 and 0.62%, respectively. At the end, all the results of solar cell analysis were discussed. To sum up, PSANFLs and PSANFLs/TiO2NPs were successfully synthesized by an affordable and straightforward mechanochemical reaction in solid-state under the green condition. The solubility and processability of the synthesized compounds have been improved compared to the previous work. We successfully fabricated hybrid photovoltaic cells of synthesized semiconductor nanostructured polymers and TiO2NPs as different architectures. We believe that the synthesized compounds can open inventive pathways for the development of other Poly(N-(sulfophenyl)aniline based hybrid materials (nanocomposites) proper for preparing new generation solar cells.Keywords: mechanochemical synthesis, PSANFLs, PSANFs/TiO2NPs, solar cell
Procedia PDF Downloads 67166 Analysis of Vertical Hall Effect Device Using Current-Mode
Authors: Kim Jin Sup
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This paper presents a vertical hall effect device using current-mode. Among different geometries that have been studied and simulated using COMSOL Multiphysics, optimized cross-shaped model displayed the best sensitivity. The cross-shaped model emerged as the optimum plate to fit the lowest noise and residual offset and the best sensitivity. The symmetrical cross-shaped hall plate is widely used because of its high sensitivity and immunity to alignment tolerances resulting from the fabrication process. The hall effect device has been designed using a 0.18-μm CMOS technology. The simulation uses the nominal bias current of 12μA. The applied magnetic field is from 0 mT to 20 mT. Simulation results achieved in COMSOL and validated with respect to the electrical behavior of equivalent circuit for Cadence. Simulation results of the one structure over the 13 available samples shows for the best geometry a current-mode sensitivity of 6.6 %/T at 20mT. Acknowledgment: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (No. R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device).Keywords: vertical hall device, current-mode, crossed-shaped model, CMOS technology
Procedia PDF Downloads 291165 Uniform Porous Multilayer-Junction Thin Film for Enhanced Gas-Sensing Performance
Authors: Ping-Ping Zhang, Hui-Zhang, Xu-Hui Sun
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Highly-uniform In2O3/CuO bilayer and multilayer porous thin films were successfully fabricated using self-assembled soft template and simple sputtering deposition technique. The sensor based on the In2O3/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at the lower working temperature, compared to single layer counterpart sensors. The response of In2O3/CuO bilayer sensors exhibits nearly 3 and 5 times higher than those of the single layer In2O3 and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on p-n hetero-junction, which contributed to the enhanced sensing performance was also experimentally confirmed by a control experiment which the SiO2 insulation layer was inserted between the In2O3 and CuO layers to break the p-n junction. In addition, the sensing performance can be further enhanced by increasing the number of In2O3/CuO junction layers. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors for practical sensing applications.Keywords: gas sensor, multilayer porous thin films, In2O3/CuO, p-n junction
Procedia PDF Downloads 323164 Electronic Nose Based on Metal Oxide Semiconductor Sensors as an Alternative Technique for the Spoilage Classification of Oat Milk
Authors: A. Deswal, N. S. Deora, H. N. Mishra
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The aim of the present study was to develop a rapid method for electronic nose for online quality control of oat milk. Analysis by electronic nose and bacteriological measurements were performed to analyse spoilage kinetics of oat milk samples stored at room temperature and refrigerated conditions for up to 15 days. Principal component analysis (PCA), discriminant factorial analysis (DFA) and soft independent modelling by class analogy (SIMCA) classification techniques were used to differentiate the samples of oat milk at different days. The total plate count (bacteriological method) was selected as the reference method to consistently train the electronic nose system. The e-nose was able to differentiate between the oat milk samples of varying microbial load. The results obtained by the bacteria total viable counts showed that the shelf-life of oat milk stored at room temperature and refrigerated conditions were 20 hours and 13 days, respectively. The models built classified oat milk samples based on the total microbial population into “unspoiled” and “spoiled”.Keywords: electronic-nose, bacteriological, shelf-life, classification
Procedia PDF Downloads 258163 Study of the Nonlinear Optic Properties of Thin Films of Europium Doped Zinc Oxide
Authors: Ali Ballouch, Nourelhouda Choukri, Zouhair Soufiani, Mohamed El Jouad, Mohamed Addou
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For several years, significant research has been developed in the areas of applications of semiconductor wide bandgap such as ZnO in optoelectronics. This oxide has the advantage of having a large exciton energy (60 meV) three times higher than that of GaN (21 meV) or ZnS (20 meV). This energy makes zinc oxide resistant for laser irradiations and very interesting for the near UV-visible optic, as well as for studying physical microcavities. A high-energy direct gap at room temperature (Eg > 1 eV) which makes it a potential candidate for emitting devices in the near UV and visible. Our work is to study the nonlinear optical properties, mainly the nonlinear third-order susceptibility of europium doped Zinc oxide thin films. The samples were prepared by chemical vapor spray method (Spray), XRD, SEM technique, THG were used for characterization. In this context, the influence of europium doping on the nonlinear optical response of the Zinc oxide was investigated. The nonlinear third-order properties depend on the physico-chemical parameters (crystallinity, strain, and surface roughness), the nature and the level of doping, temperature.Keywords: ZnO, characterization, non-linear optical properties, optoelectronics
Procedia PDF Downloads 482162 Synthesis and Characterization of Nickel and Sulphur Sensitized Zinc Oxide Structures
Authors: Ella C. Linganiso, Bonex W. Mwakikunga, Trilock Singh, Sanjay Mathur, Odireleng M. Ntwaeaborwa
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The use of nanostructured semiconducting material to catalyze degradation of environmental pollutants still receives much attention to date. One of the desired characteristics for pollutant degradation under ultra-violet visible light is the materials with extended carrier charge separation that allows for electronic transfer between the catalyst and the pollutants. In this work, zinc oxide n-type semiconductor vertically aligned structures were fabricated on silicon (100) substrates using the chemical bath deposition method. The as-synthesized structures were treated with nickel and sulphur. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy were used to characterize the phase purity, structural dimensions and elemental composition of the obtained structures respectively. Photoluminescence emission measurements showed a decrease in both the near band edge emission as well as the defect band emission upon addition of nickel and sulphur with different concentrations. This was attributed to increased charger-carrier-separation due to the presence of Ni-S material on ZnO surface, which is linked to improved charge transfer during photocatalytic reactions.Keywords: Carrier-charge-separation, nickel, photoluminescence, sulphur, zinc oxide
Procedia PDF Downloads 308161 Ge₁₋ₓSnₓ Alloys with Tuneable Energy Band Gap on GaAs (100) Substrate Manufactured by a Modified Magnetron Co-Sputtering
Authors: Li Qian, Jinchao Tong, Daohua Zhang, Weijun Fan, Fei Suo
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Photonic applications based on group IV semiconductors have always been an interest but also a challenge for the research community. We report manufacturing group IV Ge₁₋ₓSnₓ alloys with tuneable energy band gap on (100) GaAs substrate by a modified radio frequency magnetron co-sputtering. Images were taken by atomic force microscope, and scanning electron microscope clearly demonstrates a smooth surface profile, and Ge₁₋ₓSnₓ nano clusters are with the size of several tens of nanometers. Transmittance spectra were measured by Fourier Transform Infrared Spectroscopy that showed changing energy gaps with the variation in elementary composition. Calculation results by 8-band k.p method are consistent with measured gaps. Our deposition system realized direct growth of Ge₁₋ₓSnₓ thin film on GaAs (100) substrate by sputtering. This simple deposition method was modified to be able to grow high-quality photonic materials with tuneable energy gaps. This work provides an alternative and successful method for fabricating Group IV photonic semiconductor materials.Keywords: GeSn, crystal growth, sputtering, photonic
Procedia PDF Downloads 144160 Preparation and Sealing of Polymer Microchannels Using EB Lithography and Laser Welding
Authors: Ian Jones, Jonathan Griffiths
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Laser welding offers the potential for making very precise joints in plastics products, both in terms of the joint location and the amount of heating applied. These methods have allowed the production of complex products such as microfluidic devices where channels and structure resolution below 100 µm is regularly used. However, to date, the dimension of welds made using lasers has been limited by the focus spot size that is achievable from the laser source. Theoretically, the minimum spot size possible from a laser is comparable to the wavelength of the radiation emitted. Practically, with reasonable focal length optics the spot size achievable is a few factors larger than this, and the melt zone in a plastics weld is larger again than this. The narrowest welds feasible to date have therefore been 10-20 µm wide using a near-infrared laser source. The aim of this work was to prepare laser absorber tracks and channels less than 10 µm wide in PMMA thermoplastic using EB lithography followed by sealing of channels using laser welding to carry out welds with widths of the order of 1 µm, below the resolution limit of the near-infrared laser used. Welded joints with a width of 1 µm have been achieved as well as channels with a width of 5 µm. The procedure was based on the principle of transmission laser welding using a thin coating of infrared absorbent material at the joint interface. The coating was patterned using electron-beam lithography to obtain the required resolution in a reproducible manner and that resolution was retained after the transmission laser welding process. The joint strength was ratified using larger scale samples. The results demonstrate that plastics products could be made with a high density of structure with resolution below 1 um, and that welding can be applied without excessively heating regions beyond the weld lines. This may be applied to smaller scale sensor and analysis chips, micro-bio and chemical reactors and to microelectronic packaging.Keywords: microchannels, polymer, EB lithography, laser welding
Procedia PDF Downloads 401159 Efficacy of TiO₂ in the Removal of an Acid Dye by Photo Catalytic Degradation
Authors: Laila Mahtout, Kerami Ahmed, Rabhi Souhila
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The objective of this work is to reduce the impact on the environment of an acid dye (Black Eriochrome T) using catalytic photo-degradation in the presence of the semiconductor powder (TiO₂) previously characterized. A series of tests have been carried out in order to demonstrate the influence of certain parameters on the degree of dye degradation by titanium dioxide in the presence of UV rays, such as contact time, the powder mass and the pH of the solution. X-ray diffraction analysis of the powder showed that the anatase structure is predominant and the rutile phase is presented by peaks of low intensity. The various chemical groups which characterize the presence of the bands corresponding to the anatase and rutile form and other chemical functions have been detected by the Fourier Transform Infrared spectroscopy. The photo degradation of the NET by TiO₂ is very interesting because it gives encouraging results. The study of photo-degradation at different concentrations of the dye showed that the lower concentrations give better removal rates. The degree of degradation of the dye increases with increasing pH; it reaches the maximum value at pH = 9. The ideal mass of TiO₂ which gives the high removal rate is 1.2 g/l. Thermal treatment of TiO₂ with the addition of CuO with contents of 5%, 10%, and 15% respectively gives better results of degradation of the NET dye. The high percentage of elimination is observed at a CuO content of 15%.Keywords: acid dye, ultraviolet rays, degradation, photocatalyse
Procedia PDF Downloads 194158 A Study on Long Life Hybrid Battery System Consists of Ni-63 Betavoltaic Battery and All Solid Battery
Authors: Bosung Kim, Youngmok Yun, Sungho Lee, Chanseok Park
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There is a limitation to power supply and operation by the chemical or physical battery in the space environment. Therefore, research for utilizing nuclear energy in the universe has been in progress since the 1950s, around the major industrialized countries. In this study, the self-rechargeable battery having a long life relative to the half-life of the radioisotope is suggested. The hybrid system is composed of betavoltaic battery, all solid battery and energy harvesting board. Betavoltaic battery can produce electrical power at least 10 years over using the radioisotope from Ni-63 and the silicon-based semiconductor. The electrical power generated from the betavoltaic battery is stored in the all-solid battery and stored power is used if necessary. The hybrid system board is composed of input terminals, boost circuit, charging terminals and output terminals. Betavoltaic and all solid batteries are connected to the input and output terminal, respectively. The electric current of 10 µA is applied to the system board by using the high-resolution power simulator. The system efficiencies are measured from a boost up voltage of 1.8 V, 2.4 V and 3 V, respectively. As a result, the efficiency of system board is about 75% after boosting up the voltage from 1V to 3V.Keywords: isotope, betavoltaic, nuclear, battery, energy harvesting
Procedia PDF Downloads 327157 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon
Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov
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A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.Keywords: epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors
Procedia PDF Downloads 458156 FTIR and AFM Properties of Doubly Doped Tin Oxide Thin Films Prepared by Spin Coating Technique
Authors: Bahattin Duzgun, Adem Kocyigit, Demet Tatar, Ahmet Battal
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Tin oxide thin films are semiconductor materials highly transparent and with high mechanical and chemical stability, except for their interactions with oxygen atoms at high temperature. Many dopants, such as antimony (Sb), arsenic (As), fluorine (F), indium (In), molybdenum and (Mo) etc. have been used to improve the electrical properties of tin oxide films. Among these, Sb and F are found to be the most commonly used dopants for solar cell layers. Also Tin oxide tin films investigated and characterized by researchers different film deposition and analysis method. In this study, tin oxide thin films are deposited on glass substrate by spin coating technique and characterized by FTIR and AFM. FTIR spectroscopy revealed that all films have O-Sn-O and Sn-OH vibration bonds not changing with layer effect. AFM analysis indicates that all films are homogeneity and uniform. It can be seen that all films have needle shape structure in their surfaces. Uniformity and homogeneity of the films generally increased for increasing layers. The results found in present study showed that doubly doped SnO2 thin films is a good candidate for solar cells and other optoelectronic and technological applications.Keywords: doubly doped, spin coating, FTIR analysis, AFM analysis
Procedia PDF Downloads 451155 Optimizing Power in Sequential Circuits by Reducing Leakage Current Using Enhanced Multi Threshold CMOS
Authors: Patikineti Sreenivasulu, K. srinivasa Rao, A. Vinaya Babu
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The demand for portability, performance and high functional integration density of digital devices leads to the scaling of complementary metal oxide semiconductor (CMOS) devices inevitable. The increase in power consumption, coupled with the increasing demand for portable/hand-held electronics, has made power consumption a dominant concern in the design of VLSI circuits today. MTCMOS technology provides low leakage and high performance operation by utilizing high speed, low Vt (LVT) transistors for logic cells and low leakage, high Vt (HVT) devices as sleep transistors. Sleep transistors disconnect logic cells from the supply and/or ground to reduce the leakage in the sleep mode. In this technology, energy consumption while doing the mode transition and minimum time required to turn ON the circuit upon receiving the wake up signal are issues to be considered because these can adversely impact the performance of VLSI circuit. In this paper we are introducing an enhancing method of MTCMOS technology to optimize the power in MTCMOS sequential circuits.Keywords: power consumption, ultra-low power, leakage, sub threshold, MTCMOS
Procedia PDF Downloads 406154 Generation of Ultra-Broadband Supercontinuum Ultrashort Laser Pulses with High Energy
Authors: Walid Tawfik
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The interaction of intense short nano- and picosecond laser pulses with plasma leads to reach variety of important applications, including time-resolved laser induced breakdown spectroscopy (LIBS), soft x-ray lasers, and laser-driven accelerators. The progress in generating of femtosecond down to sub-10 fs optical pulses has opened a door for scientists with an essential tool in many ultrafast phenomena, such as femto-chemistry, high field physics, and high harmonic generation (HHG). The advent of high-energy laser pulses with durations of few optical cycles provided scientists with very high electric fields, and produce coherent intense UV to NIR radiation with high energy which allows for the investigation of ultrafast molecular dynamics with femtosecond resolution. In this work, we could experimentally achieve the generation of a two-octave-wide supercontinuum ultrafast pulses extending from ultraviolet at 3.5 eV to the near-infrared at 1.3 eV in neon-filled capillary fiber. These pulses are created due to nonlinear self-phase modulation (SPM) in neon as a nonlinear medium. The measurements of the generated pulses were performed using spectral phase interferometry for direct electric-field reconstruction. A full characterization of the output pulses was studied. The output pulse characterization includes the pulse width, the beam profile, and the spectral bandwidth. Under optimization conditions, the reconstructed pulse intensity autocorrelation function was exposed for the shorts possible pulse duration to achieve transform-limited pulses with energies up to 600µJ. Furthermore, the effect of variation of neon pressure on the pulse-width was studied. The nonlinear SPM found to be increased with the neon pressure. The obtained results may give an opportunity to monitor and control ultrafast transit interaction in femtosecond chemistry.Keywords: femtosecond laser, ultrafast, supercontinuum, ultra-broadband
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