Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4926

Search results for: complementary common gate

4926 CMOS Positive and Negative Resistors Based on Complementary Regulated Cascode Topology with Cross-Coupled Regulated Transistors

Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: floating active resistor, complementary common gate, complementary regulated cascode, current mirror

Procedia PDF Downloads 175
4925 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100 nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As CMOS technology scaling down, Silicon oxide thickness (SiO2) become very thin (few Nano meters). When SiO2 is less than 3nm, gate direct tunneling (DT) leakage current becomes a dormant problem that impacts the transistor performance. Floating gate MOSFET (FGMOSFET) has been used in many low-voltage and low-power applications. Most of the available simulation models of FGMOSFET for analog circuit design does not account for gate DT current and there is no accurate analysis for the gate DT. It is a crucial to use an accurate mode in order to get a realistic simulation result that account for that DT impact on FGMOSFET performance effectively.

Keywords: CMOS transistor, direct-tunneling current, floating-gate, gate-leakage current, simulation model

Procedia PDF Downloads 443
4924 Spin-Dependent Transport Signatures of Bound States: From Finger to Top Gates

Authors: Yun-Hsuan Yu, Chi-Shung Tang, Nzar Rauf Abdullah, Vidar Gudmundsson

Abstract:

Spin-orbit gap feature in energy dispersion of one-dimensional devices is revealed via strong spin-orbit interaction (SOI) effects under Zeeman field. We describe the utilization of a finger-gate or a top-gate to control the spin-dependent transport characteristics in the SOI-Zeeman influenced split-gate devices by means of a generalized spin-mixed propagation matrix method. For the finger-gate system, we find a bound state in continuum for incident electrons within the ultra-low energy regime. For the top-gate system, we observe more bound-state features in conductance associated with the formation of spin-associated hole-like or electron-like quasi-bound states around band thresholds, as well as hole bound states around the reverse point of the energy dispersion. We demonstrate that the spin-dependent transport behavior of a top-gate system is similar to that of a finger-gate system only if the top-gate length is less than the effective Fermi wavelength.

Keywords: spin-orbit, zeeman, top-gate, finger-gate, bound state

Procedia PDF Downloads 174
4923 Performance Improvement of SOI-Tri Gate FinFET Transistor Using High-K Dielectric with Metal Gate

Authors: Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza

Abstract:

SOI TRI GATE FinFET transistors have emerged as novel devices due to its simple architecture and better performance: better control over short channel effects (SCEs) and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2 nm, leakage currents due to tunneling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO2 gate oxide with a high-κ material allows increased gate capacitance without the associated leakage effects. In this paper, SOI TRI-GATE FinFET structure with use of high K dielectric materials (HfO2) and SiO2 dielectric are simulated using the 3-D device simulator Devedit and Atlas of TCAD Silvaco. The simulated results exhibits significant improvements in the performances of SOI TRI GATE FinFET with gate oxide HfO2 compared with conventional gate oxide SiO2 for the same structure. SOI TRI-GATE FinFET structure with the use of high K materials (HfO2) in gate oxide results into the increase in saturation current, threshold voltage, on-state current and Ion/Ioff ratio while off-state current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, SOI-TRI Gate FinFET, high-K dielectric, Silvaco software

Procedia PDF Downloads 260
4922 Capacitance Models of AlGaN/GaN High Electron Mobility Transistors

Authors: A. Douara, N. Kermas, B. Djellouli

Abstract:

In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: gate capacitance, AlGaN/GaN, HEMTs, quantum capacitance, centroid capacitance

Procedia PDF Downloads 305
4921 Area Efficient Carry Select Adder Using XOR Gate Design

Authors: Mahendrapal Singh Pachlaniya, Laxmi Kumre

Abstract:

The AOI (AND – OR- INVERTER) based design of XOR gate is proposed in this paper with less number of gates. This new XOR gate required four basic gates and basic gate include only AND, OR, Inverter (AOI). Conventional XOR gate required five basic gates. Ripple Carry Adder (RCA) used in parallel addition but propagation delay time is large. RCA replaced with Carry Select Adder (CSLA) to reduce propagation delay time. CSLA design with dual RCA considering carry = ‘0’ and carry = ‘1’, so it is not an area efficient adder. To make area efficient, modified CSLA is designed with single RCA considering carry = ‘0’ and another RCA considering carry = ‘1’ replaced with Binary to Excess 1 Converter (BEC). Now replacement of conventional XOR gate by new design of XOR gate in modified CSLA reduces much area compared to regular CSLA and modified CSLA.

Keywords: CSLA, BEC, XOR gate, area efficient

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4920 Transient Performance Analysis of Gate Inside Junctionless Transistor (GI-JLT)

Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

Abstract:

In this paper, the transient device performance analysis of n-type Gate Inside Junctionless Transistor (GIJLT)has been evaluated. 3-D Bohm Quantum Potential (BQP)transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor(TGF) and unity gain cut-off frequency (fT) and subthreshold slope (SS) of the GI-JLT and Gate-all-around junctionless transistor(GAA-JLT) have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: gate-inside junctionless transistor GI-JLT, gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product

Procedia PDF Downloads 299
4919 Performance Analysis of BPJLT with Different Gate and Spacer Materials

Authors: Porag Jyoti Ligira, Gargi Khanna

Abstract:

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: spacer, BPJLT, high-k, double gate

Procedia PDF Downloads 295
4918 Analysis of Scaling Effects on Analog/RF Performance of Nanowire Gate-All-Around MOSFET

Authors: Dheeraj Sharma, Santosh Kumar Vishvakarma

Abstract:

We present a detailed analysis of analog and radiofrequency (RF) performance with different gate lengths for nanowire cylindrical gate (CylG) gate-all-around (GAA) MOSFET. CylG GAA MOSFET not only suppresses the short channel effects (SCEs), it is also a good candidate for analog/RF device due to its high transconductance (gm) and high cutoff frequency (fT ). The presented work would be beneficial for a new generation of RF circuits and systems in a broad range of applications and operating frequency covering the RF spectrum. For this purpose, the analog/RF figures of merit for CylG GAA MOSFET is analyzed in terms of gate to source capacitance (Cgs), gate to drain capacitance (Cgd), transconductance generation factor gm = Id (where Id represents drain current), intrinsic gain, output resistance, fT, maximum frequency of oscillation (fmax) and gain bandwidth (GBW) product.

Keywords: Gate-All-Around MOSFET, GAA, output resistance, transconductance generation factor, intrinsic gain, cutoff frequency, fT

Procedia PDF Downloads 298
4917 2 Stage CMOS Regulated Cascode Distributed Amplifier Design Based On Inductive Coupling Technique in Submicron CMOS Process

Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

This paper proposes one stage and two stage CMOS Complementary Regulated Cascode Distributed Amplifier (CRCDA) design based on Inductive and Transformer coupling techniques. Usually, Distributed amplifier is based on inductor coupling between gate and gate of MOSFET and between drain and drain of MOSFET. But this paper propose some new idea, by coupling with differential primary windings of transformer between gate and gate of MOSFET first stage and second stage of regulated cascade amplifier and by coupling with differential secondary windings transformer of MOSFET between drain and drain of MOSFET first stage and second stage of regulated cascade amplifier. This paper also proposes polynomial modeling of Silicon Transformer passive equivalent circuit from Nanyang Technological University which is used to extract frequency response of transformer. Cadence simulation results are used to verify validity of transformer polynomial modeling which can be used to design distributed amplifier without Cadence. 4 parameters of scattering matrix of 2 port of the propose circuit is derived as a function of 4 parameters of impedance matrix.

Keywords: CMOS regulated cascode distributed amplifier, silicon transformer modeling with polynomial, low power consumption, distribute amplification technique

Procedia PDF Downloads 417
4916 Gate Voltage Controlled Humidity Sensing Using MOSFET of VO2 Particles

Authors: A. A. Akande, B. P. Dhonge, B. W. Mwakikunga, A. G. J. Machatine

Abstract:

This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s).

Keywords: VO2, VO2(B), MOSFET, gate voltage, humidity sensor

Procedia PDF Downloads 243
4915 From Past to Present Awareness about Complementary Therapies

Authors: Olcay Çam, Ayşegül Bilge, Merve Uğuryol, Hacer Demirkol

Abstract:

Complementary and alternative medicine are important for human health. It has stood out that from past to present people have resorted to particularly Turkish bath houses, cupping therapy, mud bath, hirudotheraphy and healing waters for the purpose of recovering from diseases and refresh their souls. Now, methods such as herbal treatments, massage, aromatherapy, prayer, meditation, yoga and thermal springs have been recently observed to be the most frequently used complementary therapies in Turkey. These methods are not known by people exactly. As a result, complementary therapies are applied along with the modern therapies in Turkey, we are considered to be effective in maintaining and improving individuals’ health.

Keywords: complementary therapy, health, health services, modern therapies

Procedia PDF Downloads 183
4914 High Performance of Square GAA SOI MOSFET Using High-k Dielectric with Metal Gate

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Multi-gate SOI MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with a scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high -k dielectric materials as oxide layer at different places in MOSFET structures. One of the most important multi-gate structures is square GAA SOI MOSFET that is a strong candidate for the next generation nanoscale devices; show an even stronger control of short channel effects. In this paper, GAA SOI MOSFET structure with using high -k dielectrics materials Al2O3 (k~9), HfO2 (k~20), La2O3 (k~30) and metal gate TiN are simulated by using 3-D device simulator DevEdit and Atlas of SILVACO TCAD tools. Square GAA SOI MOSFET transistor with High-k HfO2 gate dielectrics and TiN metal gate exhibits significant improvements performances compared to Al2O3 and La2O3 dielectrics for the same structure. Simulation results of GAA SOI MOSFET transistor with HfO2 dielectric show the increase in saturation current and Ion/Ioff ratio while leakage current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, square GAA SOI MOSFET, high-k dielectric, Silvaco software

Procedia PDF Downloads 169
4913 Designing Equivalent Model of Floating Gate Transistor

Authors: Birinderjit Singh Kalyan, Inderpreet Kaur, Balwinder Singh Sohi

Abstract:

In this paper, an equivalent model for floating gate transistor has been proposed. Using the floating gate voltage value, capacitive coupling coefficients has been found at different bias conditions. The amount of charge present on the gate has been then calculated using the transient models of hot electron programming and Fowler-Nordheim Tunnelling. The proposed model can be extended to the transient conditions as well. The SPICE equivalent model is designed and current-voltage characteristics and Transfer characteristics are comparatively analysed. The dc current-voltage characteristics, as well as dc transfer characteristics, have been plotted for an FGMOS with W/L=0.25μm/0.375μm, the inter-poly capacitance of 0.8fF for both programmed and erased states. The Comparative analysis has been made between the present model and capacitive coefficient coupling methods which were already available.

Keywords: FGMOS, floating gate transistor, capacitive coupling coefficient, SPICE model

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4912 Developing of Attitude towards Using Complementary Treatments Scale in Turkey

Authors: Ayşegül Bilge, Merve Uğuryol, Şeyda Dülgerler, Mustafa Yıldız

Abstract:

The purpose of this research is to prove the Attitude towards Using Complementary Treatments Scale reliability and validity. The research is a methodological type of research that has been planned to determine the validity and reliability of the Attitude towards Using Complementary Treatments Scale. The scale has been developed by the researchers. In the scale, there are 23 questions including complementary and modern therapies individuals apply when they have health problems 4-item Likert-type evaluation has been carried out in preparing the questionnaire. High score obtained from the scale indicates a positive attitude towards complementary therapies. In the course of validity assessment of the scale, expert opinion has been received, and the content validity of the scale has been determined by using Kendall coefficient correlation test (Wa=0.200, p = 0.460). In the course of the reliability assessment of the scale, total score correlations of 23 materials have been examined, and those under 0.20 correlation limit has been removed from the scale correlation. As a result, the scale was left to be 13 items. In the internal consistency tests of the analyses, Cronbach's alpha value has been found to be 0.79. As a result, of the validity analyses of the Attitude towards Using Complementary Treatments Scale, the content and language validity analyses has been found to be at the expected level. It has been determined to be a highly reliable scale as the result of the reliability analyses. In conclusion, Attitude towards Using Complementary Treatments Scale is a valid and reliable scale.

Keywords: alternative health care, complementary treatment, instrument development, nursing practice

Procedia PDF Downloads 296
4911 Validity of a Timing System in the Alpine Ski Field: A Magnet-Based Timing System Using the Magnetometer Built into an IMU

Authors: Carla Pérez-Chirinos Buxadé, Bruno Fernández-Valdés, Mónica Morral-Yepes, Sílvia Tuyà Viñas, Josep Maria Padullés Riu, Gerard Moras Feliu

Abstract:

There is a long way to explore all the possible applications inertial measurement units (IMUs) have in the sport field. The aim of this study was to evaluate the validity of a new application on the use of these wearable sensors. Specifically, it was to evaluate a magnet-based timing system (M-BTS) for timing gate-to-gate in an alpine ski slalom using the magnetometer embedded in an IMU. This was a validation study. The criterion validity of time measured by the M-BTS was assessed using the 95% error-range against actual time obtained from photocells. The experiment was carried out with first-and second-year junior skiers performing a ski slalom on a ski training slope. Eight alpine skiers (17.4 ± 0.8 years, 176.4 ± 4.9 cm, 67.7 ± 2.0 kg, 128.8 ± 26.6 slalom FIS-Points) participated in the study. An IMU device was attached to the skier’s lower back. Skiers performed a 40-gate slalom from which four gates were assessed. The M-BTS consisted of placing four bar magnets buried into the snow surface, on the inner side of each gate’s turning pole; the magnetometer built into the IMU detected the peak-shaped magnetic field when passing near the magnets at a certain speed. Four magnetic peaks were detected. The time compressed between peaks was calculated. Three inter-gate times were obtained for each system: photocells and M-BTS. The total time was defined as the time sum of the inter-gate times. The 95% error intervals for the total time was 0.050 s for the ski slalom. The M-BTS is valid for timing gate-to-gate in an alpine ski slalom. Inter-gate times can provide additional data for analyzing skier’s performance, such as asymmetries between left and right foot.

Keywords: gate crossing time, inertial measurement unit, timing system, wearable sensor

Procedia PDF Downloads 97
4910 Deficiencies in Vitamin A and Iron Supply Potential of Selected Indigenous Complementary Foods of Infants in Uganda

Authors: Richard Kajjura, Joyce Kikafunda, Roger Whitehead

Abstract:

Introduction: Indigenous complementary recipes for children (6-23 months) are bulky and inextricably linked. The potential contribution of indigenous complementary foods to infant’s vitamin A and iron needs is not well investigated in Uganda. Less is known whether children in Uganda are living with or without adequate supply of vitamin A and iron nutrients. In this study, vitamin A and iron contents were assessed in the complementary foods fed to infants aged 6-11 months in a Peri-urban setting in Kampala District in Central Uganda. Objective: Assessment of vitamin A and iron contents of indigenous complementary foods of children as fed and associated demographic factor. Method: In a cross sectional study design, one hundred and three (153) households with children aged 6-11 months were randomly selected to participate in the assessment. Complementary food samples were collected from the children’s mothers/caretakers at the time of feeding the child. The mothers’ socio-demographic characteristics of age, education, marital status, occupation and sex collected a semi-qualitative questionnaire. The Vitamin A and iron contents in the complementary foods were analyzed using a UV/VIS spectrophotometer for vitamin A and Atomic Absorption spectrophotometer for iron samples. The data was analyzed using Gene-stat software program. Results: The mean vitamin A content was 97.0± 72.5 µg while that of iron was 1.5 ± 0.4 mg per 100g of food sample as fed. The contribution of indigenous complementary foods found was 32% for vitamin A and 15% iron of the recommended dietary allowance. Age of children was found to be significantly associated Vitamin A and Iron supply potential. Conclusion: The contribution of indigenous complementary foods to infant’s vitamin A and iron needs was low. Complementary foods in Uganda are more likely to be deficient in vitamin A and iron content. Nutrient dense dietary supplementation should be intervened in to make possible for Ugandan children attain full growth potential.

Keywords: indigenous complementary food, infant, iron, vitamin A

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4909 Graphene Transistor Employing Multilayer Hexagonal Boron Nitride as Substrate and Gate Insulator

Authors: Nikhil Jain, Bin Yu

Abstract:

We explore the potential of using ultra-thin hexagonal boron nitride (h-BN) as both supporting substrate and gate dielectric for graphene-channel field effect transistors (GFETs). Different from commonly used oxide-based dielectric materials which are typically amorphous, very rough in surface, and rich with surface traps, h-BN is layered insulator free of dangling bonds and surface states, featuring atomically smooth surface. In a graphene-channel-last device structure with local buried metal gate electrode (TiN), thin h-BN multilayer is employed as both supporting “substrate” and gate dielectric for graphene active channel. We observed superior carrier mobility and electrical conduction, significantly improved from that in GFETs with SiO2 as substrate/gate insulator. In addition, we report excellent dielectric behavior of layered h-BN, including ultra-low leakage current and high critical electric field for breakdown.

Keywords: graphene, field-effect transistors, hexagonal boron nitride, dielectric strength, tunneling

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4908 Suppressing Ambipolar Conduction Using Dual Material Gate in Tunnel-FETs Having Heavily Doped Drain

Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

Abstract:

In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET

Procedia PDF Downloads 286
4907 Stage-Gate Based Integrated Project Management Methodology for New Product Development

Authors: Mert Kıranç, Ekrem Duman, Murat Özbilen

Abstract:

In order to achieve new product development (NPD) activities on time and within budgetary constraints, the NPD managers need a well-designed methodology. This study intends to create an integrated project management methodology for the ones who focus on new product development projects. In the scope of the study, four different management systems are combined. These systems are called as 'Schedule-oriented Stage-Gate Method, Risk Management, Change Management and Earned Value Management'. New product development term is quite common in many different industries such as defense industry, construction, health care/dental, higher education, fast moving consumer goods, white goods, electronic devices, marketing and advertising and software development. All product manufacturers run against each other’s for introducing a new product to the market. In order to achieve to produce a more competitive product in the market, an optimum project management methodology is chosen, and this methodology is adapted to company culture. The right methodology helps the company to present perfect product to the customers at the right time. The benefits of proposed methodology are discussed as an application by a company. As a result, how the integrated methodology improves the efficiency and how it achieves the success of the project are unfolded.

Keywords: project, project management, management methodology, new product development, risk management, change management, earned value, stage-gate

Procedia PDF Downloads 210
4906 Complementary and Traditional Medicine in Turkey

Authors: Hüseyin Biçer

Abstract:

The purpose of this study is an explanation of using and expectation traditional and complementary medicine in Turkey in terms of regionally, cultural and social. Due to geopolitics position, at the intersection of the Middle East, Africa and Europe, Turkey has historically hosted many civilizations and cultures, and hosts many religions at the same time and therefore is very open to intercultural interaction. For this reason, the traditional medicine of Turkey contains traces of many civilizations rather than a traditional medicine of its own. In Turkey, complementary and traditional medicine are used actively. The aim of the study is to measure whether the patients have ever taken traditional medicine as a caretaker or for the supportive treatment of their diseases, and as a result, their expectations. This cross-sectional, paper-based survey study was conducted in 27 state hospitals and 29 family medicine clinics in seven geographical regions of Turkey. Patients who had an appointment in the waiting rooms that day were included. 77.4% of the patients participating in the study stated that they used traditional medicine at least 5 times in their life, 27.6% stated that traditional medicine was sufficient in some diseases, and 36.8% stated that traditional treatment was a part of normal treatment. Both faith and cultural approaches in Turkey always keep traditional medicine close to drugs. Another danger, apart from traditional medicine drugs that can interact with drugs, is that patients find it sufficient to use traditional and complementary medicine alone.

Keywords: complementary medicine, traditional medicine, medicine in Turkey, alternative medicine

Procedia PDF Downloads 83
4905 Commodification of the Chinese Language: Investigating Language Ideology in the Chinese Complementary Schools’ Online Discourse

Authors: Yuying Liu

Abstract:

Despite the increasing popularity of Chinese and the recognition of the growing commodifying ideology of Chinese language in many contexts (Liu and Gao, 2020; Guo, Shin and Shen 2020), the ideological orientations of the Chinese diaspora community towards the Chinese language remain under-researched. This research contributes seeks to bridge this gap by investigating the micro-level language ideologies embedded in the Chinese complementary schools in the Republic of Ireland. Informed by Ruíz’s (1984) metaphorical representations of language, 11 Chinese complementary schools’ websites were analysed as discursive texts that signal the language policy and ideology to prospective learners and parents were analysed. The results of the analysis suggest that a move from a portrayal of Chinese as linked to student heritage identity, to the commodification of linguistic and cultural diversity, is evident. It denotes the growing commodifying ideology among the Chinese complementary schools in the Republic of Ireland. The changing profile of the complementary school, from serving an ethnical community to teaching Chinese as a foreign language for the wider community, indicates the possibility of creating the a positive synergy between the Complementary school and the mainstream education. This study contributes to the wider discussions of language ideology and language planning, with regards to modern language learning and heritage language maintenance.

Keywords: the Chinese language;, Chinese as heritage language, Chinese as foreign language, Chinese community schools

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4904 Study of Transport in Electronic Devices with Stochastic Monte Carlo Method: Modeling and Simulation along with Submicron Gate (Lg=0.5um)

Authors: N. Massoum, B. Bouazza

Abstract:

In this paper, we have developed a numerical simulation model to describe the electrical properties of GaInP MESFET with submicron gate (Lg = 0.5 µm). This model takes into account the three-dimensional (3D) distribution of the load in the short channel and the law effect of mobility as a function of electric field. Simulation software based on a stochastic method such as Monte Carlo has been established. The results are discussed and compared with those of the experiment. The result suggests experimentally that, in a very small gate length in our devices (smaller than 40 nm), short-channel tunneling explains the degradation of transistor performance, which was previously enhanced by velocity overshoot.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device, simulation software

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4903 A Schema of Building an Efficient Quality Gate throughout the Software Development with Tools

Authors: Le Chen

Abstract:

This paper presents an efficient tool platform scheme to ensure quality protection throughout the software development process. The main principle is to manage the information of requirements, design, development, testing, operation and maintenance process with proper tools, and to set up the quality standards of each process. Through the tools’ display and summary of quality standards, the quality standards can be visualizad and ready for policy decision, which is called Quality Gate in this paper. In addition, the tools are also integrated to achieve the exchange and relation of information which highly improving operational efficiency. In this paper, the feasibility of the scheme is verified by practical application of development projects, and the overall information display and data mining are proposed to be further improved.

Keywords: efficiency, quality gate, software process, tools

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4902 Pin Count Aware Volumetric Error Detection in Arbitrary Microfluidic Bio-Chip

Authors: Kunal Das, Priya Sengupta, Abhishek K. Singh

Abstract:

Pin assignment, scheduling, routing and error detection for arbitrary biochemical protocols in Digital Microfluidic Biochip have been reported in this paper. The research work is concentrating on pin assignment for 2 or 3 droplets routing in the arbitrary biochemical protocol, scheduling and routing in m × n biochip. The volumetric error arises due to droplet split in the biochip. The volumetric error detection is also addressed using biochip AND logic gate which is known as microfluidic AND or mAND gate. The algorithm for pin assignment for m × n biochip required m+n-1 numbers of pins. The basic principle of this algorithm is that no same pin will be allowed to be placed in the same column, same row and diagonal and adjacent cells. The same pin should be placed a distance apart such that interference becomes less. A case study also reported in this paper.

Keywords: digital microfludic biochip, cross-contamination, pin assignment, microfluidic AND gate

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4901 Nurses' Experiences of Using Bergamot Essential Oil (Aromatherapy) on Patients with Dementia Suffering from Depression: A Pilot Study

Authors: Berit Johannessen

Abstract:

Introduction: Depression and dementia are the two most common psychiatric disorders of older people. The use of antidepressants does not always have the desired effect and serious side effects are common. Aroma therapists claim that the essential oil of Bergamot has an antidepressant effect. Aromatherapy is defined as holistic or complementary medicine and is rarely used in the Norwegian public health service, but in recent years, there has been an increasing interest in, and use of complementary and alternative therapies (CAM) in the Norwegian population, and aromatherapy is one of the most widely used. Focus for this study: How do nurses experience the use of Bergamot essential oil for patients suffering from dementia and depression? Method: Action research study including 12 patients and 8 nurses. The patients were strategically selected by the nurses and were given Bergamot in a fan diffuser every day for 12 weeks. The patients' mood and behavior patterns were reported daily and the nurse`s experiences were reported weekly. Individual interviews with the nurses were conducted at the end of the project. Results: The nurses reported that bergamot had positive impact on patients mood and wellbeing, and was considered as an effective method for six patients, four had uncertain effect and two had no effect. They also reported less use of medication and that the fan diffusers were easy and pleasant to administer. They found the use of natural remedies as Bergamot inspiring and wanted to learn more about aromatherapy and its use in nursing. Some were disturbed by the smell and some had to deal with critical and negative colleagues. Conclusion: Nurses experienced aromatherapy using bergamot oil in fan diffusers as a simple and useful procedure for patients suffering from dementia and depression. The effects were varying. Further research is needed.

Keywords: aromatherapy, bergamot, dementia, depression

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4900 In₀.₁₈Al₀.₈₂N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Backside Metal-Trench Design

Authors: C. S Lee, W. C. Hsu, H. Y. Liu, C. J. Lin, S. C. Yao, Y. T. Shen, Y. C. Lin

Abstract:

In₀.₁₈Al₀.₈₂N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) having Al₂O₃ gate-dielectric and backside metal-trench structure are investigated. The Al₂O₃ gate oxide was formed by using a cost-effective non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. In order to enhance the heat dissipation efficiency, metal trenches were etched 3-µm deep and evaporated with a 150-nm thick Ni film on the backside of the Si substrate. The present In₀.₁₈Al₀.₈₂N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain-source current density (IDS, max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing (GVS) of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 10⁸ (7.4 × 10⁴), subthreshold swing (SS) of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Gₐ) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are obtained. Superior breakdown and RF power performances are achieved. The present In₀.₁₈Al₀.₈₂N/AlN/GaN MOS-HFET design with backside metal-trench is advantageous for high-power circuit applications.

Keywords: backside metal-trench, InAlN/AlN/GaN, MOS-HFET, non-vacuum ultrasonic spray pyrolysis deposition

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4899 Low Voltage and High Field-Effect Mobility Thin Film Transistor Using Crystalline Polymer Nanocomposite as Gate Dielectric

Authors: Debabrata Bhadra, B. K. Chaudhuri

Abstract:

The operation of organic thin film transistors (OFETs) with low voltage is currently a prevailing issue. We have fabricated anthracene thin-film transistor (TFT) with an ultrathin layer (~450nm) of Poly-vinylidene fluoride (PVDF)/CuO nanocomposites as a gate insulator. We obtained a device with excellent electrical characteristics at low operating voltages (<1V). Different layers of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constant (εr ). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films were investigated. This device was found to have highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of 0.34V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such favorable combination of properties means that these OFETs can be utilized successfully as voltages below 1V. A very simple fabrication process has been used along with step wise poling process for enhancing the pyroelectric effects on the device performance. The output characteristic of OFET after poling were changed and exhibited linear current-voltage relationship showing the evidence of large polarization. The temperature dependent response of the device was also investigated. The stable performance of the OFET after poling operation makes it reliable in temperature sensor applications. Such High-ε CuO/PVDF gate dielectric appears to be highly promising candidates for organic non-volatile memory and sensor field-effect transistors (FETs).

Keywords: organic field effect transistors, thin film transistor, gate dielectric, organic semiconductor

Procedia PDF Downloads 180
4898 Use of Alternative and Complementary Therapies in Patients with Chronic Pain in a Medical Institution in Medellin, Colombia, 2014

Authors: Lina María Martínez Sánchez, Juliana Molina Valencia, Esteban Vallejo Agudelo, Daniel Gallego González, María Isabel Pérez Palacio, Juan Ricardo Gaviria García, María De Los Ángeles Rodríguez Gázquez, Gloria Inés Martínez Domínguez

Abstract:

Alternative and complementary therapies constitute a vast and complex combination of interventions, philosophies, approaches, and therapies that acquire a holistic healthcare point of view, becoming an alternative for the treatment of patients with chronic pain. Objective: determine the characteristics of the use of alternative and complementary therapies in patients with chronic pain who consulted in a medical institution. Methodology: cross-sectional and descriptive study, with a population of patients that assisted to the outpatient consultation and met the eligibility criteria. Sampling was not conducted. A form was used for the collection of demographic and clinical variables and the Holistic Complementary and Alternative Medicine Questionnaire (HCAMQ) was validated. The analysis and processing of information was carried out using the SPSS program vr.19. Results: 220 people with chronic pain were included. The average age was 54.7±16.2 years, 78.2% were women, and 75.5% belonged to the socioeconomic strata 1 to 3. Musculoskeletal pain (77.7%), migraine (15%) and neuralgia (9.1%) were the most frequently types of chronic pain. 33.6% of participants have used some kind of alternative and complementary therapy; the most frequent were: homeopathy (14.5%), phytotherapy (12.7%), and acupuncture (11.4%). The total average HCAMQ score for the study group was 30.2±7.0 points, which shows a moderate attitude toward the use of complementary and alternative medicine. The highest scores according to the type of pain were: neuralgia (32.4±5.8), musculoskeletal pain (30.5±6.7), fibromyalgia (29.6±7.3) and migraine (28.5±8.8). The reliability of the HCAMQ was acceptable (Cronbach's α: 0.6). Conclusion: it was noted that the types of chronic pain and the clinical or therapeutic management of patients correspond to the data available in current literature. Despite the moderate attitude toward the use of these alternative and complementary therapies, one of every three patients uses them.

Keywords: chronic pain, complementary therapies, homeopathy, acupuncture analgesia

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4897 Improving Mathematics and Engineering Interest through Programming

Authors: Geoffrey A. Wright

Abstract:

In an attempt to address shortcomings revealed in international assessments and lamented in legislation, many schools are reducing or eliminating elective courses, applying the rationale that replacing "non-essential" subjects with core subjects, such as mathematics and language arts, will better position students in the global market. However, there is evidence that systematically pairing a core subject with another complementary subject may lead to greater overall learning in both subjects. In this paper, we outline the methods and preliminary findings from a study we conducted analyzing the influence learning programming has on student mathematical comprehension and ability. The purpose of this research is to demonstrate in what ways two subjects might complement each other, and to better understand the principles and conditions that encourage what we call lateral transfer, the synergistic effect that occurs when a learner studies two complementary subjects.

Keywords: programming, engineering, technology, complementary subjects

Procedia PDF Downloads 261