Search results for: two-dimensional semiconductors

Authors: A. Rashid, N. Hasan

Abstract:

The present study investigates numerically the phenomenon of vortex-shedding and its suppression in twodimensional mixed convective flow past a square cylinder under the joint influence of buoyancy and free-stream orientation with respect to gravity. The numerical experiments have been conducted at a fixed Reynolds number (Re) of 100 and Prandtl number (Pr) of 0.71, while Richardson number (Ri) is varied from 0 to 1.6 and freestream orientation, α, is kept in the range 0o≤ α ≤ 90o, with 0o corresponding to an upward flow and 90o representing a cross-flow scenario, respectively. The continuity, momentum and energy equations, subject to Boussinesq approximation, are discretized using a finite difference method and are solved by a semi-explicit pressure correction scheme. The critical Richardson number, leading to the suppression of the vortex-shedding (Ric), is estimated by using Stuart-Landau theory at various free-stream orientations and the neutral curve is obtained in the Ri-α plane. The neutral curve exhibits an interesting non-monotonic behavior with Ric first increasing with increasing values of α upto 45o and then decreasing till 70o. Beyond 70o, the neutral curve again exhibits a sharp increasing asymptotic trend with Ric approaching very large values as α approaches 90o. The suppression of vortex shedding is not observed at α = 90o (cross-flow). In the unsteady flow regime, the Strouhal number (St) increases with the increase in Richardson number.

Keywords: bluff body, buoyancy, free-stream orientation, vortex-shedding.

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Authors: Abdelmonaem Ayachi, Belgacem Hamdi

Abstract:

This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology.

Keywords: Semiconductors, digital electronics, double pass transistor technology, Full adder, fault tolerance.

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Authors: Renbin Dai, Rana Arslan Ali Khan

Abstract:

The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.

Keywords: Power amplifier, Class AB, Class A, MMIC, 2-stage, X band.

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Authors: N. I. Kargin, G. K. Safaraliev, A. S. Gusev, A. O. Sultanov, N. V. Siglovaya, S. M. Ryndya, A. A. Timofeev

Abstract:

In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.

Keywords: Silicon carbide, porous silicon, carbonization, electrochemical etching, diffusion.

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Authors: Marco Raciti Castelli, Alberto Castelli, Ernesto Benini

Abstract:

The construction of a civil structure inside a urban area inevitably modifies the outdoor microclimate at the building site. Wind speed, wind direction, air pollution, driving rain, radiation and daylight are some of the main physical aspects that are subjected to the major changes. The quantitative amount of these modifications depends on the shape, size and orientation of the building and on its interaction with the surrounding environment.The flow field over a flat roof model building has been numerically investigated in order to determine two-dimensional CFD guidelines for the calculation of the turbulent flow over a structure immersed in an atmospheric boundary layer. To this purpose, a complete validation campaign has been performed through a systematic comparison of numerical simulations with wind tunnel experimental data.Several turbulence models and spatial node distributions have been tested for five different vertical positions, respectively from the upstream leading edge to the downstream bottom edge of the analyzed model. Flow field characteristics in the neighborhood of the building model have been numerically investigated, allowing a quantification of the capabilities of the CFD code to predict the flow separation and the extension of the recirculation regions.The proposed calculations have allowed the development of a preliminary procedure to be used as a guidance in selecting the appropriate grid configuration and corresponding turbulence model for the prediction of the flow field over a twodimensional roof architecture dominated by flow separation.

Keywords: CFD, roof, building, wind.

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Authors: K. B. Dermenci, B. Ebin, S.Gürmen

Abstract:

Noble metal participation in nanostructured semiconductor catalysts has drawn much interest because of their improved properties. Recently, it has been discussed by many researchers that Ag participation in TiO2, CuO, ZnO semiconductors showed improved photocatalytic and optical properties. In this research, Ag/ZnO nanocomposite particles were prepared by Ultrasonic Spray Pyrolysis(USP) Method. 0.1M silver and zinc nitrate aqueous solutions were used as precursor solutions. The Ag:Zn atomic ratio of the solution was selected 1:1. Experiments were taken place under constant air flow of 400 mL/min at 800°C furnace temperature. Particles were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Spectroscopy (EDS). The crystallite sizes of Ag and ZnO in composite particles are 24.6 nm, 19.7 nm respectively. Although, spherical nanocomposite particles are in a range of 300- 800 nm, these particles are formed by the aggregation of primary particles which are in a range of 20-60 nm.

Keywords: Ag/ZnO nanocatalysts, Nanotechnology, USP

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Authors: A. Sedky, E. El-Suheel

Abstract:

We report here structural, mechanical and I-V characteristics of Zn1-xMxO ceramic samples with various x and M. It is found that the considered dopants does not influence the wellknown peaks related to wurtzite structure of ZnO ceramics, while the shape and size of grains are clearly affected. Average crystalline diameters, deduced from XRD are between 42 nm and 54 nm, which are 70 times lower than those obtained from SEM micrographs. Interestingly, the potential barrier could be formed by adding Cu up to 0.20, and it is completely deformed by 0.025 Ni additions. The breakdown field could be enhanced up to 4138 V/cm by 0.025 Cu additions, followed by a decrease with further increase of Cu . On the other hand a gradual decrease in VHN is reported for both dopants and their values are higher in Ni samples as compared to Cu samples. The electrical conductivity is generally improved by Ni, while addition of Cu improved it only in the over doped region (≥ 0.10). These results are discussed in terms of the difference of valency and ferromagnetic ordering for both dopants as compared to undoped sample.

Keywords: Semiconductors, Chemical Synthesis, Impurities and Electronic Transport

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.

Keywords: Nitride semiconductors, InAlGaN quaternary, laserdiode, superlattice.

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Authors: Archana S. Nanoty, A. R. Chudasama

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Three-phase induction machines are today a standard for industrial electrical drives. Cost, reliability, robustness and maintenance free operation are among the reasons these machines are replacing dc drive systems. The development of power electronics and signal processing systems has eliminated one of the greatest disadvantages of such ac systems, which is the issue of control. With modern techniques of field oriented vector control, the task of variable speed control of induction machines is no longer a disadvantage. The need to increase system performance, particularly when facing limits on the power ratings of power supplies and semiconductors, motivates the use of phase number other than three, In this paper a novel scheme of connecting two, three phase induction motors in parallel fed by two inverters; viz. VSI and CSI and their vector control is presented.

Keywords: Field oriented control, multiphase induction motor, power electronics converter.

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Authors: Walenty Oniszczuk

Abstract:

The use of buffer thresholds, blocking and adequate service strategies are well-known techniques for computer networks traffic congestion control. This motivates the study of series queues with blocking, feedback (service under Head of Line (HoL) priority discipline) and finite capacity buffers with thresholds. In this paper, the external traffic is modelled using the Poisson process and the service times have been modelled using the exponential distribution. We consider a three-station network with two finite buffers, for which a set of thresholds (tm1 and tm2) is defined. This computer network behaves as follows. A task, which finishes its service at station B, gets sent back to station A for re-processing with probability o. When the number of tasks in the second buffer exceeds a threshold tm2 and the number of task in the first buffer is less than tm1, the fed back task is served under HoL priority discipline. In opposite case, for fed backed tasks, “no two priority services in succession" procedure (preventing a possible overflow in the first buffer) is applied. Using an open Markovian queuing schema with blocking, priority feedback service and thresholds, a closed form cost-effective analytical solution is obtained. The model of servers linked in series is very accurate. It is derived directly from a twodimensional state graph and a set of steady-state equations, followed by calculations of main measures of effectiveness. Consequently, efficient expressions of the low computational cost are determined. Based on numerical experiments and collected results we conclude that the proposed model with blocking, feedback and thresholds can provide accurate performance estimates of linked in series networks.

Keywords: Blocking, Congestion control, Feedback, Markov chains, Performance evaluation, Threshold-base networks.

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Authors: S. Zhuiykov, E. Kats

Abstract:

In recent times there has been a growing interest in the development of quasi-two-dimensional niobium pentoxide (Nb2O5) as a semiconductor for the potential electronic applications such as capacitors, filtration, dye-sensitised solar cells and gas sensing platforms. Therefore once the purpose is established, Nb2O5 can be prepared in a number of nano- and sub-micron-structural morphologies that include rods, wires, belts and tubes. In this study films of Nb2O5 were prepared on gold plated silicon substrate using spin-coating technique and subsequently by mechanical exfoliation. The reason this method was employed was to achieve layers of less than 15nm in thickness. The sintering temperature of the specimen was 800oC. The morphology and structural characteristics of the films were analyzed by Atomic Force Microscopy (AFM), Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS).

Keywords: Mechanical exfoliation, niobium pentoxide, quazitwo- dimensional, semiconductor, sol-gel, spin-coating, two dimensional semiconductors.

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Authors: Meichen Lee, Michael K. H. Leung

Abstract:

In recent years, visible-light activated photocatalysis has become a major field of intense researches for the higher efficiency of solar energy utilizations. Many attempts have been made on the modification of wide band gap semiconductors, while more and more efforts emphasize on cost-effective synthesis of visible-light activated catalysts. In this work, BiOBr nanoplates with band gap of visible-light range are synthesized through a promising microwave solvothermal method. The treatment time period and temperature dependent BiOBr nanosheets of various particle sizes are investigated through SEM. BiOBr synthesized under the condition of 160°C for 60 mins shows the most uniform particle sizes around 311 nm and the highest surface-to-volume ratio on account of its smallest average particle sizes compared with others. It exhibits the best photocatalytic behavior among all samples in RhB degradation.

Keywords: Microwave solvothermal process, nanoplates, solar energy, visible-light photocatalysis.

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Authors: L. Achou, A. Doghmane

Abstract:

Elastic performances, as an essential property of nanowires (NWs), play a significant role in the design and fabrication of modern nanodevices. In this paper, our interest is focused on ZnO NWs to investigate wire diameter (D_wire ≤ 400 nm) effects on elastic properties. The plotted data reveal that a strong size dependence of the elastic constants exists when the wire diameter is smaller than ~ 100 nm. For larger diameters (D_wire > 100 nm), these ones approach their corresponding bulk values. To enrich this study, we make use of the scanning acoustic microscopy simulation technique. The calculation methodology consists of several steps: determination of longitudinal and transverse wave velocities, calculation of refection coefficients, calculation of acoustic signatures and Rayleigh velocity determination. Quantitatively, it was found that changes in ZnO diameters over the ranges 1 nm ≤ D_wire ≤ 100 nm lead to similar exponential variations, for all elastic parameters, of the from: A = a + b exp(-D_wire/c) where a, b, and c are characteristic constants of a given parameter. The developed relation can be used to predict elastic properties of such NW by just knowing its diameter and vice versa.

Keywords: Elastic properties, nanowires, semiconductors, ZnO.

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Authors: Hoang Van Ngoc, Nguyen Thu Huong, Nguyen Quang Bau

Abstract:

Using the quantum kinetic equation for electrons interacting with acoustic phonon, the density of the constant current associated with the drag of charge carriers in cylindrical quantum wire by a linearly polarized electromagnetic wave, a DC electric field and a laser radiation field is calculated. The density of the constant current is studied as a function of the frequency of electromagnetic wave, as well as the frequency of laser field and the basic elements of quantum wire with a parabolic potential. The analytic expression of the constant current density is numerically evaluated and plotted for a specific quantum wires GaAs/AlGaAs to show the dependence of the constant current density on above parameters. All these results of quantum wire compared with bulk semiconductors and superlattices to show the difference.

Keywords: Photon-drag effect, constant current density, quantum wire, parabolic potential.

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Authors: S. S. Ng, Z. Hassan, H. Abu Hassan

Abstract:

III-nitride quaternary InxAlyGa1-x-yN alloys have experienced considerable interest as potential materials for optoelectronic applications. Despite these interesting applications and the extensive efforts to understand their fundamental properties, research on its fundamental surface property, i.e., surface phonon polariton (SPP) has not yet been reported. In fact, the SPP properties have been shown to provide application for some photonic devices. Hence, there is an absolute need for thorough studies on the SPP properties of this material. In this work, theoretical study on the SPP modes in InAlGaN quaternary alloys are reported. Attention is focus on the wurtzite (α-) structure InxAlyGa1-x-yN semi-crystal with different In composition, x ranging from 0 to 0.10 and constant Al composition, y = 0.06. The SPP modes are obtained through the theoretical simulation by means of anisotropy model. The characteristics of SP dispersion curves are discussed. Accessible results in terms of the experimental point of view are also given. Finally, the results revealed that the SPP mode of α-InxAlyGa1-x-yN semiconductors exhibits two-mode behavior.

Keywords: III-nitride semiconductor, attenuated total reflection, quaternary alloy, surface phonon polariton.

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Authors: H. Paredes Gutiérrez, S. T. Pérez-Merchancano

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Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.

Keywords: Quantum semiconductors, nanostructures, quantum dots, spin polarization.

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Authors: N. Q. Bau, N. V. Nghia

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The acoustomagnetoelectric (AME) field in a rectangular quantum wire with an infinite potential (RQWIP) is calculated in the presence of an external magnetic field (EMF) by using the quantum kinetic equation for the distribution function of electrons system interacting with external phonons and electrons scattering with internal acoustic phonon in a RQWIP. We obtained ananalytic expression for the AME field in the RQWIP in the presence of the EMF. The dependence of AME field on the frequency of external acoustic wave, the temperature T of system, the cyclotron frequency of the EMF and the intensity of the EMF is obtained. Theoretical results for the AME field are numerically evaluated, plotted and discussed for a specific RQWIP GaAs/GaAsAl. This result has shown that the dependence of the AME field on intensity of the EMF is nonlinearly and it is many distinct maxima in the quantized magnetic region. We also compared received fields with those for normal bulk semiconductors, quantum well and quantum wire to show the difference. The influence of an EMF on AME field in a RQWIP is newly developed.

Keywords: Rectangular quantum wire, acoustomagnetoelectric field, electron-phonon interaction, kinetic equation method.

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Authors: Youngji Yoo, Seung Hwan Park, Daewoong An, Sung-Shick Kim, Jun-Geol Baek

Abstract:

The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.

Keywords: Semiconductor, wafer bin map (WBM), feature extraction, spatial point patterns, contour map.

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The InAlGaN alloy has only recently began receiving serious attention into its growth and application. High quality InGaN films have led to the development of light emitting diodes (LEDs) and blue laser diodes (LDs). The quaternary InAlGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report an ultraviolet (UV) quaternary InAlGaN multi-quantum wells (MQWs) LD study by using the simulation program of Integrated System Engineering (ISE TCAD). Advanced physical models of semiconductor properties were used in order to obtain an optimized structure. The device performance which is affected by piezoelectric and thermal effects was studied via drift-diffusion model for carrier transport, optical gain and loss. The optical performance of the UV LD with different numbers of quantum wells was numerically investigated. The main peak of the emission wavelength for double quantum wells (DQWs) was shifted from 358 to 355.8 nm when the forward current was increased. Preliminary simulated results indicated that better output performance and lower threshold current could be obtained when the quantum number is four, with output power of 130 mW and threshold current of 140 mA.

Keywords: Nitride semiconductors, InAlGaN quaternary, UVLD, numerical simulation.

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Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

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Authors: Nguyen Thu Huong, Nguyen Quang Bau

Abstract:

The Hall Coefficient (HC) and the Magnetoresistance (MR) have been studied in two-dimensional systems. The HC and the MR in Rectangular Quantum Wire (RQW) subjected to a crossed DC electric field and magnetic field in the presence of a Strong Electromagnetic Wave (EMW) characterized by electric field are studied in this work. Using the quantum kinetic equation for electrons interacting with optical phonons, we obtain the analytic expressions for the HC and the MR with a dependence on magnetic field, EMW frequency, temperatures of systems and the length characteristic parameters of RQW. These expressions are different from those obtained for bulk semiconductors and cylindrical quantum wires. The analytical results are applied to GaAs/GaAs/Al. For this material, MR depends on the ratio of the EMW frequency to the cyclotron frequency. Indeed, MR reaches a minimum at the ratio 5/4, and when this ratio increases, it tends towards a saturation value. The HC can take negative or positive values. Each curve has one maximum and one minimum. When magnetic field increases, the HC is negative, achieves a minimum value and then increases suddenly to a maximum with a positive value. This phenomenon differs from the one observed in cylindrical quantum wire, which does not have maximum and minimum values.

Keywords: Hall coefficient, rectangular quantum wires, electron-optical phonon interaction, quantum kinetic equation.

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Authors: Abada Ahmed, Hiadsi Said, Ouahrani Tarik, Amrani Bouhalouane, Amara Kadda

Abstract:

Using the first-principles full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method based on density functional theory (DFT), we have investigated the electronic structure and magnetism of full Heusler alloys Co2ZrGe and Co2NbB. These compounds are predicted to be half-metallic ferromagnets (HMFs) with a total magnetic moment of 2.000
B per formula unit, well consistent with the Slater-Pauling rule. Calculations show that both the alloys have an indirect band gaps, in the minority-spin channel of density of states (DOS), with values of 0.58 eV and 0.47 eV for Co2ZrGe and Co2NbB, respectively. Analysis of the DOS and magnetic moments indicates that their magnetism is mainly related to the d-d hybridization between the Co and Zr (or Nb) atoms. The half-metallicity is found to be relatively robust against volume changes. In addition, an atom inside molecule AIM formalism and an electron localization function ELF were also adopted to study the bonding properties of these compounds, building a bridge between their electronic and bonding behavior. As they have a good crystallographic compatibility with the lattice of semiconductors used industrially and negative calculated cohesive energies with considerable absolute values these two alloys could be promising magnetic materials in the spintronic field.

Keywords: Electronic properties, full Heusler alloys, halfmetallic ferromagnets, magnetic properties.

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Authors: Hoda Aleali, Nastaran Mansour, Maryam Mirzaie

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In this paper, we study the optical nonlinearities of Silver sulfide (Ag2S) nanostructures dispersed in the Dimethyl sulfoxide (DMSO) under exposure to 532 nm, 15 nanosecond (ns) pulsed laser irradiation. Ultraviolet–visible absorption spectrometry (UV-Vis), X-ray diffraction (XRD), and transmission electron microscopy (TEM) are used to characterize the obtained nanocrystal samples. The band gap energy of colloid is determined by analyzing the UV–Vis absorption spectra of the Ag2S NPs using the band theory of semiconductors. Z-scan technique is used to characterize the optical nonlinear properties of the Ag2S nanoparticles (NPs). Large enhancement of two photon absorption effect is observed with increase in concentration of the Ag2S nanoparticles using open Zscan measurements in the ns laser regime. The values of the nonlinear absorption coefficients are determined based on the local nonlinear responses including two photon absorption. The observed aperture dependence of the Ag2S NP limiting performance indicates that the nonlinear scattering plays an important role in the limiting action of the sample. The concentration dependence of the optical liming is also investigated. Our results demonstrate that the optical limiting threshold decreases with increasing the silver sulfide NPs in DMSO.

Keywords: Nanoscale materials, Silver sulfide nanoparticles, Nonlinear absorption, Nonlinear scattering, Optical limiting.

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Authors: N. H. Abd Raof, H. Abu Hassan, S.K. Mohd Bakhori, S. S. Ng, Z. Hassan

Abstract:

Quaternary InxAlyGa1-x-yN semiconductors have attracted much research interest because the use of this quaternary offer the great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. The structural and optical properties of InxAlyGa1-x-yN alloys grown by molecular beam epitaxy (MBE) is presented. The structural quality of InxAlyGa1-x-yN layers was characterized using high-resolution X-ray diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN films had wurtzite structure and without phase separation. As the In composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN peak gradually decreases, indicating the increase in the lattice constant c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with increasing In composition from 0 to 0.04, that could indicate the decrease of quality of the samples due to point defects leading to non-uniformity of the epilayers. UV-VIS spectroscopy have been used to study the energy band gap of InxAlyGa1-x-yN. As the indium (In) compositions increases, the energy band gap decreases. However, for InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer. The bowing parameter which appears also to be very sensitive on In content is investigated and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From photoluminescence (PL) measurement, green luminescence (GL) appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm and it become more pronounced as the In composition (x) increased, which is believed cause by gallium vacancies and related to isolated native defects.

Keywords: HRXRD, nitrides, PL, quaternary, UV-VIS.

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Authors: Khaled A. Madi

Abstract:

Induction motors are being used in greater numbers throughout a wide variety of industrial and commercial applications because it provides many benefits and reliable device to convert the electrical energy into mechanical motion. In some application it-s desired to control the speed of the induction motor. Because of the physics of the induction motor the preferred method of controlling its speed is to vary the frequency of the AC voltage driving the motor. In recent years, with the microcontroller incorporated into an appliance it becomes possible to use it to generate the variable frequency AC voltage to control the speed of the induction motor. This study investigates the microcontroller based variable frequency power inverter. the microcontroller is provide the variable frequency pulse width modulation (PWM) signal that control the applied voltage on the gate drive, which is provides the required PWM frequency with less harmonics at the output of the power inverter. The fully controlled bridge voltage source inverter has been implemented with semiconductors power devices isolated gate bipolar transistor (IGBT), and the PWM technique has been employed in this inverter to supply the motor with AC voltage. The proposed drive system for three & single phase power inverter is simulated using Matlab/Simulink. The Matlab Simulation Results for the proposed system were achieved with different SPWM. From the result a stable variable frequency inverter over wide range has been obtained and a good agreement has been found between the simulation and hardware of a microcontroller based single phase inverter.

Keywords: Power, inverter, PWM, microcontroller.

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Authors: V. Ngamaramvaranggul, S. Thenissara

Abstract:

The simulation of extrusion process is studied widely in order to both increase products and improve quality, with broad application in wire coating. The annular tube-tooling extrusion was set up by a model that is termed as Navier-Stokes equation in addition to a rheological model of differential form based on singlemode exponential Phan-Thien/Tanner constitutive equation in a twodimensional cylindrical coordinate system for predicting the contraction point of the polymer melt beyond the die. Numerical solutions are sought through semi-implicit Taylor-Galerkin pressurecorrection finite element scheme. The investigation was focused on incompressible creeping flow with long relaxation time in terms of Weissenberg numbers up to 200. The isothermal case was considered with surface tension effect on free surface in extrudate flow and no slip at die wall. The Stream Line Upwind Petrov-Galerkin has been proposed to stabilize solution. The structure of mesh after die exit was adjusted following prediction of both top and bottom free surfaces so as to keep the location of contraction point around one unit length which is close to experimental results. The simulation of extrusion process is studied widely in order to both increase products and improve quality, with broad application in wire coating. The annular tube-tooling extrusion was set up by a model that is termed as Navier-Stokes equation in addition to a rheological model of differential form based on single-mode exponential Phan- Thien/Tanner constitutive equation in a two-dimensional cylindrical coordinate system for predicting the contraction point of the polymer melt beyond the die. Numerical solutions are sought through semiimplicit Taylor-Galerkin pressure-correction finite element scheme. The investigation was focused on incompressible creeping flow with long relaxation time in terms of Weissenberg numbers up to 200. The isothermal case was considered with surface tension effect on free surface in extrudate flow and no slip at die wall. The Stream Line Upwind Petrov-Galerkin has been proposed to stabilize solution. The structure of mesh after die exit was adjusted following prediction of both top and bottom free surfaces so as to keep the location of contraction point around one unit length which is close to experimental results.

Keywords: wire coating, free surface, tube-tooling, extrudate swell, surface tension, finite element method.

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