Search results for: deep submicronCMOS circuits
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 609

Search results for: deep submicronCMOS circuits

309 Design and Simulation of Low Noise Amplifier Circuit for 5 GHz to 6 GHz

Authors: Hossein Sahoolizadeh, Alishir Moradi Kordalivand, Zargham Heidari

Abstract:

In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation Forces desingners to make choices in the desing of RF circuits. In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using MESFET for frequency range of 5 GHz to 6 GHz. The desing simulation process is down using Advance Design System (ADS). A single stage LNA has successfully designed with 15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3 GHz. Also the designed LNA should be working stably In a frequency range of 5 GHz to 6 GHz.

Keywords: Advance Design System, Low Noise Amplifier, Radio Frequency, Noise Figure.

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308 Action Potential of Lateral Geniculate Neurons at Low Threshold Currents: Simulation Study

Authors: Faris Tarlochan, Siva Mahesh Tangutooru

Abstract:

Lateral Geniculate Nucleus (LGN) is the relay center in the visual pathway as it receives most of the input information from retinal ganglion cells (RGC) and sends to visual cortex. Low threshold calcium currents (IT) at the membrane are the unique indicator to characterize this firing functionality of the LGN neurons gained by the RGC input. According to the LGN functional requirements such as functional mapping of RGC to LGN, the morphologies of the LGN neurons were developed. During the neurological disorders like glaucoma, the mapping between RGC and LGN is disconnected and hence stimulating LGN electrically using deep brain electrodes can restore the functionalities of LGN. A computational model was developed for simulating the LGN neurons with three predominant morphologies each representing different functional mapping of RGC to LGN. The firings of action potentials at LGN neuron due to IT were characterized by varying the stimulation parameters, morphological parameters and orientation. A wide range of stimulation parameters (stimulus amplitude, duration and frequency) represents the various strengths of the electrical stimulation with different morphological parameters (soma size, dendrites size and structure). The orientation (0-1800) of LGN neuron with respect to the stimulating electrode represents the angle at which the extracellular deep brain stimulation towards LGN neuron is performed. A reduced dendrite structure was used in the model using Bush–Sejnowski algorithm to decrease the computational time while conserving its input resistance and total surface area. The major finding is that an input potential of 0.4 V is required to produce the action potential in the LGN neuron which is placed at 100 μm distance from the electrode. From this study, it can be concluded that the neuroprostheses under design would need to consider the capability of inducing at least 0.4V to produce action potentials in LGN.

Keywords: Lateral geniculate nucleus, visual cortex, finite element, glaucoma, neuroprostheses.

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307 Time-Domain Analysis of Pulse Parameters Effects on Crosstalk (In High Speed Circuits)

Authors: L. Tani, N. El Ouzzani

Abstract:

Crosstalk among interconnects and printed-circuit board (PCB) traces is a major limiting factor of signal quality in highspeed digital and communication equipments especially when fast data buses are involved. Such a bus is considered as a planar multiconductor transmission line. This paper will demonstrate how the finite difference time domain (FDTD) method provides an exact solution of the transmission-line equations to analyze the near end and the far end crosstalk. In addition, this study makes it possible to analyze the rise time effect on the near and far end voltages of the victim conductor. The paper also discusses a statistical analysis, based upon a set of several simulations. Such analysis leads to a better understanding of the phenomenon and yields useful information.

Keywords: Multiconductor transmission line, Crosstalk, Finite difference time domain (FDTD), printed-circuit board (PCB), Rise time, Statistical analysis.

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306 Intelligent Off-Grid Photovoltaic Supply Systems

Authors: Prashant Kumar Soori, Parthasarathy L., Masami Okano, Awet Mana

Abstract:

Off-grid Photovoltaic (PV) systems are empowering technology in underdeveloped countries like Ethiopia where many people live far away from the modern world. Where there is relatively low energy consumption, providing energy from grid systems is not commercially cost-effective. As a result, significant people groups worldwide stay without access to electricity. One remote village in northern Ethiopia was selected by the United Nations for a pilot project to improve its living conditions. As part of this comprehensive project, an intelligent charge controller circuit for Off-grid PV systems was designed for the clinic in that village. In this paper, design aspects of an intelligent charge controller unit and its load driver circuits are discussed for an efficient utilization of PVbased supply systems.

Keywords: Compact Fluorescent Lamp (CFL), FluorescentLamp, Intelligent Charge Controller Unit (ICCU), Light EmittingDiode (LED), Photovoltaic (PV).

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305 Heuristic Set-Covering-Based Postprocessing for Improving the Quine-McCluskey Method

Authors: Miloš Šeda

Abstract:

Finding the minimal logical functions has important applications in the design of logical circuits. This task is solved by many different methods but, frequently, they are not suitable for a computer implementation. We briefly summarise the well-known Quine-McCluskey method, which gives a unique procedure of computing and thus can be simply implemented, but, even for simple examples, does not guarantee an optimal solution. Since the Petrick extension of the Quine-McCluskey method does not give a generally usable method for finding an optimum for logical functions with a high number of values, we focus on interpretation of the result of the Quine-McCluskey method and show that it represents a set covering problem that, unfortunately, is an NP-hard combinatorial problem. Therefore it must be solved by heuristic or approximation methods. We propose an approach based on genetic algorithms and show suitable parameter settings.

Keywords: Boolean algebra, Karnaugh map, Quine-McCluskey method, set covering problem, genetic algorithm.

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304 Learning Monte Carlo Data for Circuit Path Length

Authors: Namal A. Senanayake, A. Beg, Withana C. Prasad

Abstract:

This paper analyzes the patterns of the Monte Carlo data for a large number of variables and minterms, in order to characterize the circuit path length behavior. We propose models that are determined by training process of shortest path length derived from a wide range of binary decision diagram (BDD) simulations. The creation of the model was done use of feed forward neural network (NN) modeling methodology. Experimental results for ISCAS benchmark circuits show an RMS error of 0.102 for the shortest path length complexity estimation predicted by the NN model (NNM). Use of such a model can help reduce the time complexity of very large scale integrated (VLSI) circuitries and related computer-aided design (CAD) tools that use BDDs.

Keywords: Monte Carlo data, Binary decision diagrams, Neural network modeling, Shortest path length estimation.

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303 Modeling the Transport of Charge Carriers in the Active Devices MESFET, Based of GaInP by the Monte Carlo Method

Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

Abstract:

The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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302 Fault Detection of Broken Rotor Bars Using Stator Current Spectrum for the Direct Torque Control Induction Motor

Authors: Ridha Kechida, Arezki Menacer, Abdelhamid Benakcha

Abstract:

The numerous qualities of squirrel cage induction machines enhance their use in industry. However, various faults can occur, such as stator short-circuits and rotor failures. In this paper, we use a technique based on the spectral analysis of stator current in order to detect the fault in the machine: broken rotor bars. Thus, the number effect of the breaks has been highlighted. The effect is highlighted by considering the machine controlled by the Direct Torque Control (DTC). The key to fault detection is the development of a simplified dynamic model of a squirrel cage induction motor taking account the broken bars fault and the stator current spectrum analysis (FFT).

Keywords: Rotor faults, diagnosis, induction motor, DTC, statorcurrent spectrum.

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301 Quantum Dot Cellular Automata Based Effective Design of Combinational and Sequential Logical Structures

Authors: Hema Sandhya Jagarlamudi, Mousumi Saha, Pavan Kumar Jagarlamudi

Abstract:

The use of Quantum dots is a promising emerging Technology for implementing digital system at the nano level. It is effecient for attractive features such as faster speed , smaller size and low power consumption than transistor technology. In this paper, various Combinational and sequential logical structures - HALF ADDER, SR Latch and Flip-Flop, D Flip-Flop preceding NAND, NOR, XOR,XNOR are discussed based on QCA design, with comparatively less number of cells and area. By applying these layouts, the hardware requirements for a QCA design can be reduced. These structures are designed and simulated using QCA Designer Tool. By taking full advantage of the unique features of this technology, we are able to create complete circuits on a single layer of QCA. Such Devices are expected to function with ultra low power Consumption and very high speeds.

Keywords: QCA, QCA Designer, Clock, Majority Gate

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300 Oxygen-Interstitials and Group-V Element Doping for p-Type ZnO

Authors: A. M. Gsiea, J. P. Goss, P. R. Briddon, K. M. Etmimi

Abstract:

In realizing devices using ZnO, a key challenge is the production of p-type material. Substitution of oxygen by a group-V impurity is thought to result in deep acceptor levels, but a candidate made up from a complex of a group-V impurity (P, As, Sb) on a Zn site coupled with two vacant Zn sites is widely viewed as a candidate. We show using density-functional simulations that in contrast to such a view, complexes involving oxygen interstitials are energetically more favorable, resulting in group-V impurities coordinated with four, five or six oxygen atoms.

Keywords: DFT, Oxygen, p-Type, ZnO.

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299 Improvement in Silicon on Insulator Devices using Strained Si/SiGe Technology for High Performance in RF Integrated Circuits

Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

Abstract:

RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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298 ANN Models for Microstrip Line Synthesis and Analysis

Authors: Dr.K.Sri Rama Krishna, J.Lakshmi Narayana, Dr.L.Pratap Reddy

Abstract:

Microstrip lines, widely used for good reason, are broadband in frequency and provide circuits that are compact and light in weight. They are generally economical to produce since they are readily adaptable to hybrid and monolithic integrated circuit (IC) fabrication technologies at RF and microwave frequencies. Although, the existing EM simulation models used for the synthesis and analysis of microstrip lines are reasonably accurate, they are computationally intensive and time consuming. Neural networks recently gained attention as fast and flexible vehicles to microwave modeling, simulation and optimization. After learning and abstracting from microwave data, through a process called training, neural network models are used during microwave design to provide instant answers to the task learned.This paper presents simple and accurate ANN models for the synthesis and analysis of Microstrip lines to more accurately compute the characteristic parameters and the physical dimensions respectively for the required design specifications.

Keywords: Neural Models, Algorithms, Microstrip Lines, Analysis, Synthesis

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297 A Sub-Pixel Image Registration Technique with Applications to Defect Detection

Authors: Zhen-Hui Hu, Jyh-Shong Ju, Ming-Hwei Perng

Abstract:

This paper presents a useful sub-pixel image registration method using line segments and a sub-pixel edge detector. In this approach, straight line segments are first extracted from gray images at the pixel level before applying the sub-pixel edge detector. Next, all sub-pixel line edges are mapped onto the orientation-distance parameter space to solve for line correspondence between images. Finally, the registration parameters with sub-pixel accuracy are analytically solved via two linear least-square problems. The present approach can be applied to various fields where fast registration with sub-pixel accuracy is required. To illustrate, the present approach is applied to the inspection of printed circuits on a flat panel. Numerical example shows that the present approach is effective and accurate when target images contain a sufficient number of line segments, which is true in many industrial problems.

Keywords: Defect detection, Image registration, Straight line segment, Sub-pixel.

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296 Numerical Analysis and Design of Dielectric to Plasmonic Waveguides Couplers

Authors: Emanuela Paranhos Lima, Vitaly Félix Rodríguez Esquerre

Abstract:

In this work, efficient directional coupler composed of dielectric waveguides and metallic film has been analyzed in details by simulations using finite element method (FEM). The structure consists of a step-index fiber with dielectric core, silica cladding, and a metal nanowire parallel to the core. The results show that an efficient conversion of optical dielectric modes to long range plasmonic is possible. Low insertion losses in conjunction with short coupling length and a broadband operation can be achieved under certain conditions. This kind of couplers has potential applications for the design of photonic integrated circuits for signal routing between dielectric/plasmonic waveguides, sensing, lithography, and optical storage systems. A high efficient focusing of light in a very small region can be obtained.

Keywords: Directional coupler, finite element method, metallic nanowire, plasmonic, surface plasmon polariton.

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295 An Analytical Electron Mobility Model based on Particle Swarm Computation for Siliconbased Devices

Authors: F. Djeffal, N. Lakhdar, T. Bendib

Abstract:

The study of the transport coefficients in electronic devices is currently carried out by analytical and empirical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the different characteristics of the electronic silicon-based devices. Further progress in the development, design and optimization of Silicon-based devices necessarily requires new theory and modeling tools. In our study, we use the PSO (Particle Swarm Optimization) technique as a computational tool to develop analytical approaches in order to study the transport phenomenon of the electron in crystalline silicon as function of temperature and doping concentration. Good agreement between our results and measured data has been found. The optimized analytical models can also be incorporated into the circuits simulators to study Si-based devices without impact on the computational time and data storage.

Keywords: Particle Swarm, electron mobility, Si-based devices, Optimization.

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294 Design of a Low Power Compensated 90nm RF Multiplier with Improved Isolation Characteristics for a Transmitted Reference Receiver Front End

Authors: Apratim Roy, A. B. M. H. Rashid

Abstract:

In this paper, a double balanced radio frequency multiplier is presented which is customized for transmitted reference ultra wideband (UWB) receivers. The multiplier uses 90nm model parameters and exploits compensating transistors to provide controllable gain for a Gilbert core. After performing periodic and quasiperiodic non linear analyses the RF mixer (multiplier) achieves a voltage conversion gain of 16 dB and a DSB noise figure of 8.253 dB with very low power consumption. A high degree of LO to RF isolation (in the range of -94dB), RF to IF isolation (in the range of -95dB) and LO to IF isolation (in the range of -143dB) is expected for this design with an input-referred IP3 point of -1.93 dBm and an input referred 1 dB compression point of -10.67dBm. The amount of noise at the output is 7.7 nV/√Hz when the LO input is driven by a 10dBm signal. The mixer manifests better results when compared with other reported multiplier circuits and its Zero-IF performance ensures its applicability as TR-UWB multipliers.

Keywords: UWB, Transmitted Reference, Controllable Gain, RFMixer, Multiplier.

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293 Improving the LDMOS Temperature Compensation Bias Circuit to Optimize Back-Off

Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: Amplifier, DVB-T, LDMOS, MOSFETS.

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292 An Investigation into the Effect of Water Quality on Flotation Performance

Authors: Edison Muzenda

Abstract:

A study was carried out to determine the effect of water quality on flotation performance. The experimental test work comprised of batch flotation tests using Denver lab cell for a period of 10 minutes. Nine different test runs were carried out in triplicates to ensure reproducibility using different water types from different thickener overflows, return and sewage effluent water (process water) and portable water. The water sources differed in pH, total dissolved solids, total suspended solids and conductivity. Process water was found to reduce the concentrate recovery and mass pull, while portable water increased the concentrate recovery and mass pull. Portable water reduced the concentrate grade while process water increased the concentrate grade. It is proposed that a combination of process water and portable water supply be used in flotation circuits to balance the different effects that the different water types have on the flotation efficiency.

Keywords: Flotation, mass pull, process water, thickeneroverflows, water quality.

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291 Mathematical Modeling of Elastically Creeping State of Arbitrarily Orientated Cavities in the Transversally Isotropic Massif

Authors: N. Azhikhanov, T. Turimbetov, Zh. Masanov, N. Zhunisov

Abstract:

It can be determined in preference between representative mechanical and mathematical model of elasticcreeping deformation of transversally isotropic array with doubly periodic system of tilted slots, and offer of the finite elements calculation scheme, and inspection of the states of two diagonal arbitrary profile cavities of deep inception, and in setting up the tense and dislocation fields distribution nature in computing processes.

Keywords: Mathematical model, tunnel, transversally isotropic, finite elements.

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290 All-Silicon Raman Laser with Quasi-Phase-Matched Structures and Resonators

Authors: Isao Tomita

Abstract:

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2.

Keywords: All-silicon raman laser, FTTH, GE-PON, quasi-phase-matched structure, resonator.

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289 Millimeter Wave I/Q Generation with the Inductive Resonator Matched Poly-Phase Filter

Authors: Ki-Jin Kim, Sanghoon Park, K. H. Ahn

Abstract:

A way of generating millimeter wave I/Q signal using inductive resonator matched poly-phase filter is suggested. Normally the poly-phase filter generates quite accurate I/Q phase and magnitude but the loss of the filter is considerable due to series connection of passive RC components. This loss term directly increases system noise figure when the poly-phase filter is used in RF Front-end. The proposed matching method eliminates above mentioned loss and in addition provides gain on the passive filter. The working algorithm is illustrated by mathematical analysis. The generated I/Q signal is used in implementing millimeter wave phase shifter for the 60 GHz communication system to verify its effectiveness. The circuit is fabricated in 90 nm TSMC RF CMOS process under 1.2 V supply voltage. The measurement results showed that the suggested method improved gain by 6.5 dB and noise by 2.3 dB. The summary of the proposed I/Q generation is compared with previous works.

Keywords: Millimeter Wave Circuits, Local Distribution, I/Q Generator.

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288 Performance Trade-Off of File System between Overwriting and Dynamic Relocation on a Solid State Drive

Authors: Choulseung Hyun, Hunki Kwon, Jaeho Kim, Eujoon Byun, Jongmoo Choi, Donghee Lee, Sam H. Noh

Abstract:

Most file systems overwrite modified file data and metadata in their original locations, while the Log-structured File System (LFS) dynamically relocates them to other locations. We design and implement the Evergreen file system that can select between overwriting or relocation for each block of a file or metadata. Therefore, the Evergreen file system can achieve superior write performance by sequentializing write requests (similar to LFS-style relocation) when space utilization is low and overwriting when utilization is high. Another challenging issue is identifying performance benefits of LFS-style relocation over overwriting on a newly introduced SSD (Solid State Drive) which has only Flash-memory chips and control circuits without mechanical parts. Our experimental results measured on a SSD show that relocation outperforms overwriting when space utilization is below 80% and vice versa.

Keywords: Evergreen File System, Overwrite, Relocation, Solid State Drive.

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287 Microwave LNA Design Based On Adaptive Network Fuzzy Inference and Evolutionary Optimization

Authors: Samad Nejatian, Vahideh Rezaie, Vahid Asadpour

Abstract:

This paper presents a novel approach for the design of microwave circuits using Adaptive Network Fuzzy Inference Optimizer (ANFIO). The method takes advantage of direct synthesis of subsections of the amplifier using very fast and accurate ANFIO models based on exact simulations using ADS. A mapping from course space to fine space known as space mapping is also used. The proposed synthesis approach takes into account the noise and scattering parameters due to parasitic elements to achieve optimal results. The overall ANFIO system is capable of designing different LNAs at different noise and scattering criteria. This approach offers significantly reduced time in the design of microwave amplifiers within the validity range of the ANFIO system. The method has been proven to work efficiently for a 2.4GHz LNA example. The S21 of 10.1 dB and noise figure (NF) of 2.7 dB achieved for ANFIO while S21 of 9.05 dB and NF of 2.6 dB achieved for ANN.

Keywords: fuzzy system, low noise amplifier, microwaveamplifier, space mapping

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286 Thermal Securing of Electrical Contacts inside Oil Power Transformers

Authors: Ioan Rusu

Abstract:

In the operation of power transformers of 110 kV/MV from substations, these are traveled by fault current resulting from MV line damage. Defect electrical contacts are heated when they are travelled from fault currents. In the case of high temperatures when 135 °C is reached, the electrical insulating oil in the vicinity of the electrical faults comes into contact with these contacts releases gases, and activates the electrical protection. To avoid auto-flammability of electro-insulating oil, we designed a security system thermal of electrical contact defects by pouring fire-resistant polyurethane foam, mastic or mortar fire inside a cardboard electro-insulating cylinder. From practical experience, in the exploitation of power transformers of 110 kV/MT in oil electro-insulating were recorded some passing disconnecting commanded by the gas protection at internal defects. In normal operation and in the optimal load, nominal currents do not require thermal secure contacts inside electrical transformers, contacts are made at the fabrication according to the projects or to repair by solder. In the case of external short circuits close to the substation, the contacts inside electrical transformers, even if they are well made in sizes of Rcontact = 10‑6 Ω, are subjected to short-circuit currents of the order of 10 kA-20 kA which lead to the dissipation of some significant second-order electric powers, 100 W-400 W, on contact. At some internal or external factors which action on electrical contacts, including electrodynamic efforts at short-circuits, these factors could be degraded over time to values in the range of 10-4 Ω to 10-5 Ω and if the action time of protection is great, on the order of seconds, power dissipation on electrical contacts achieve high values of 1,0 kW to 40,0 kW. This power leads to strong local heating, hundreds of degrees Celsius and can initiate self-ignition and burning oil in the vicinity of electro-insulating contacts with action the gas relay. Degradation of electrical contacts inside power transformers may not be limited for the duration of their operation. In order to avoid oil burn with gas release near electrical contacts, at short-circuit currents 10 kA-20 kA, we have outlined the following solutions: covering electrical contacts in fireproof materials that would avoid direct burn oil at short circuit and transmission of heat from electrical contact along the conductors with heat dissipation gradually over time, in a large volume of cooling. Flame retardant materials are: polyurethane foam, mastic, cement (concrete). In the normal condition of operation of transformer, insulating of conductors coils is with paper and insulating oil. Ignition points of its two components respectively are approximated: 135 °C heat for oil and 200 0C for paper. In the case of a faulty electrical contact, about 10-3 Ω, at short-circuit; the temperature can reach for a short time, a value of 300 °C-400 °C, which ignite the paper and also the oil. By burning oil, there are local gases that disconnect the power transformer. Securing thermal electrical contacts inside the transformer, in cardboard tube with polyurethane foams, mastik or cement, ensures avoiding gas release and also gas protection working.

Keywords: Power transformer, oil insulatation, electric contacts, gases, gas relay.

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285 Lego Mindstorms as a Simulation of Robotic Systems

Authors: Miroslav Popelka, Jakub Nožička

Abstract:

In this paper we deal with using Lego Mindstorms in simulation of robotic systems with respect to cost reduction. Lego Mindstorms kit contains broad variety of hardware components which are required to simulate, program and test the robotics systems in practice. Algorithm programming went in development environment supplied together with Lego kit as in programming language C# as well. Algorithm following the line, which we dealt with in this paper, uses theoretical findings from area of controlling circuits. PID controller has been chosen as controlling circuit whose individual components were experimentally adjusted for optimal motion of robot tracking the line. Data which are determined to process by algorithm are collected by sensors which scan the interface between black and white surfaces followed by robot. Based on discovered facts Lego Mindstorms can be considered for low-cost and capable kit to simulate real robotics systems.

Keywords: LEGO Mindstorms, PID controller, low-cost robotics systems, line follower, sensors, programming language C#, EV3 Home Edition Software.

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284 Improvement of Synchronous Machine Dynamic Characteristics via Neural Network Based Controllers

Authors: S. A. Gawish, F. A. Khalifa, R. M. Mostafa

Abstract:

This paper presents Simulation and experimental study aimed at investigating the effectiveness of an adaptive artificial neural network stabilizer on enhancing the damping torque of a synchronous generator. For this purpose, a power system comprising a synchronous generator feeding a large power system through a short tie line is considered. The proposed adaptive neuro-control system consists of two multi-layered feed forward neural networks, which work as a plant model identifier and a controller. It generates supplementary control signals to be utilized by conventional controllers. The details of the interfacing circuits, sensors and transducers, which have been designed and built for use in tests, are presented. The synchronous generator is tested to investigate the effect of tuning a Power System Stabilizer (PSS) on its dynamic stability. The obtained simulation and experimental results verify the basic theoretical concepts.

Keywords: Adaptive artificial neural network, power system stabilizer, synchronous generator.

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283 A High Accuracy Measurement Circuit for Soil Moisture Detection

Authors: Sheroz Khan, A. H. M. Zahirul Alam, Othman O. Khalifa, Mohd Rafiqul Islam, Zuraidah Zainudin, Muzna S. Khan, Nurul Iman Muhamad Pauzi

Abstract:

The study of soil for agriculture purposes has remained the main focus of research since the beginning of civilization as humans- food related requirements remained closely linked with the soil. The study of soil has generated an interest among the researchers for very similar other reasons including transmission, reflection and refraction of signals for deploying wireless underground sensor networks or for the monitoring of objects on (or in ) soil in the form of better understanding of soil electromagnetic characteristics properties. The moisture content has been very instrumental in such studies as it decides on the resistance of the soil, and hence the attenuation on signals traveling through soil or the attenuation the signals may suffer upon their impact on soil. This work is related testing and characterizing a measurement circuit meant for the detection of moisture level content in soil.

Keywords: Analog–digital Conversion, Bridge Circuits, Intelligent sensors, Pulse Time Modulation, Relaxation Oscillator

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282 Effect of Urea Deep Placement Technology Adoption on the Production Frontier: Evidence from Irrigation Rice Farmers in the Northern Region of Ghana

Authors: Shaibu Baanni Azumah, William Adzawla

Abstract:

Rice is an important staple crop, with current demand higher than the domestic supply in Ghana. This has led to a high and unfavourable import bill. Therefore, recent policies and interventions in the agricultural sub-sector aim at promoting various improved agricultural technologies in order to improve domestic production and reduce the importation of rice. In this study, we examined the effect of the adoption of Urea Deep Placement (UDP) technology by rice farmers on the position of the production frontier. This involved 200 farmers selected through a multi stage sampling technique in the Northern region of Ghana. A Cobb-Douglas stochastic frontier model was fitted. The result showed that the adoption of UDP technology shifts the output frontier outward and also move the farmers closer to the frontier. Farmers were also operating under diminishing returns to scale which calls for redress. Other factors that significantly influenced rice production were farm size, labour, use of certified seeds and NPK fertilizer. Although there was an opportunity for improvement, the farmers were highly efficient (92%), compared to previous studies. Farmers’ efficiency was improved through increased education, household size, experience, access to credit, and lack of extension service provision by MoFA. The study recommends the revision of Ghana’s agricultural policy to include the UDP technology. Agricultural Extension officers of the Ministry of Food and Agriculture (MoFA) should be trained on the UDP technology to support IFDC’s drive to improve adoption by rice farmers. Rice farmers are also encouraged to expand their farm lands, improve plant population, and also increase the usage of fertilizer to improve yields. Mechanisms through which credit can be made easily accessible and effectively utilised should be identified and promoted.

Keywords: Efficiency, rice farmers, stochastic frontier, UDP technology.

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281 A Novel Low Power Very Low Voltage High Performance Current Mirror

Authors: Khalil Monfaredi, Hassan Faraji Baghtash, Majid Abbasi

Abstract:

In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.

Keywords: Analog circuits, Current mirror, high frequency, Low power, Low voltage.

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280 Hybrid Prefix Adder Architecture for Minimizing the Power Delay Product

Authors: P.Ramanathan, P.T.Vanathi

Abstract:

Parallel Prefix addition is a technique for improving the speed of binary addition. Due to continuing integrating intensity and the growing needs of portable devices, low-power and highperformance designs are of prime importance. The classical parallel prefix adder structures presented in the literature over the years optimize for logic depth, area, fan-out and interconnect count of logic circuits. In this paper, a new architecture for performing 8-bit, 16-bit and 32-bit Parallel Prefix addition is proposed. The proposed prefix adder structures is compared with several classical adders of same bit width in terms of power, delay and number of computational nodes. The results reveal that the proposed structures have the least power delay product when compared with its peer existing Prefix adder structures. Tanner EDA tool was used for simulating the adder designs in the TSMC 180 nm and TSMC 130 nm technologies.

Keywords: Parallel Prefix Adder (PPA), Dot operator, Semi-Dotoperator, Complementary Metal Oxide Semiconductor (CMOS), Odd-dot operator, Even-dot operator, Odd-semi-dot operator andEven-semi-dot operator.

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