Search results for: Semiconductor switch
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 270

Search results for: Semiconductor switch

60 DC-Link Voltage Control of DC-DC Boost Converter-Inverter System with PI Controller

Authors: Thandar Aung, Tun Lin Naing

Abstract:

In this paper, the DC-link voltage control of DC-DC boost converter–inverter system is proposed. The mathematical model is developed from four different sub-circuits that depended on the switch positions. The developed differential equations are combined to develop the dynamic model. Transfer function is generated from the switched function model. Fluctuation of DC-link voltage causes connected loads malfunction. For this problem, a kind of traditional controller, the PI controller is applied to achieve constant DC-link voltage. The PI controller gains are obtained based on transfer function step response. The simulation work has been studied by using MATLAB/Simulink software and hardware prototype is implemented with a low-cost microcontroller Arduino Nano. Experimental results are collected by using ArduinoIO library package. Closed-loop DC-link voltage control system is tested with various line and load disturbances. It is found that the experimental results give equal responses with the simulation results.

Keywords: ArduinoIO library package, boost converter-inverter system, low cost microcontroller, PI controller, switched function model.

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59 Reliability Analysis of Computer Centre at Yobe State University Using LRU Algorithm

Authors: V. V. Singh, Yusuf Ibrahim Gwanda, Rajesh Prasad

Abstract:

In this paper, we focus on the reliability and performance analysis of Computer Centre (CC) at Yobe State University, Damaturu, Nigeria. The CC consists of three servers: one database mail server, one redundant and one for sharing with the client computers in the CC (called as a local server). Observing the different possibilities of the functioning of the CC, the analysis has been done to evaluate the various popular measures of reliability such as availability, reliability, mean time to failure (MTTF), profit analysis due to the operation of the system. The system can ultimately fail due to the failure of router, redundant server before repairing the mail server and switch failure. The system can also partially fail when a local server fails. The failed devices have restored according to Least Recently Used (LRU) techniques. The system can also fail entirely due to a cooling failure of the server, electricity failure or some natural calamity like earthquake, fire tsunami, etc. All the failure rates are assumed to be constant and follow exponential time distribution, while the repair follows two types of distributions: i.e. general and Gumbel-Hougaard family copula distribution.

Keywords: Reliability, availability Gumbel-Hougaard family copula, MTTF, internet data center.

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58 CMOS Positive and Negative Resistors Based on Complementary Regulated Cascode Topology with Cross-Coupled Regulated Transistors

Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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57 A Unified Approach for Naval Telecommunication Architectures

Authors: Y. Lacroix, J.-F. Malbranque

Abstract:

We present a chronological evolution for naval telecommunication networks. We distinguish periods: with or without multiplexers, with switch systems, with federative systems, with medium switching, and with medium switching with wireless networks. This highlights the introduction of new layers and technology in the architecture. These architectures are presented using layer models of transmission, in a unified way, which enables us to integrate pre-existing models. A ship of a naval fleet has internal communications (i.e. applications' networks of the edge) and external communications (i.e. the use of the means of transmission between edges). We propose architectures, deduced from the layer model, which are the point of convergence between the networks on board and the HF, UHF radio, and satellite resources. This modelling allows to consider end-to-end naval communications, and in a more global way, that is from the user on board towards the user on shore, including transmission and networks on the shore side. The new architectures need take care of quality of services for end-to-end communications, the more remote control develops a lot and will do so in the future. Naval telecommunications will be more and more complex and will use more and more advanced technologies, it will thus be necessary to establish clear global communication schemes to grant consistency of the architectures. Our latest model has been implemented in a military naval situation, and serves as the basic architecture for the RIFAN2 network.

Keywords: Equilibrium beach profile, eastern tombolo of Giens, potential function, erosion.

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56 Zero Voltage Switched Full Bridge Converters for the Battery Charger of Electric Vehicle

Authors: Rizwan Ullah, Abdar Ali, Zahid Ullah

Abstract:

This paper illustrates the study of three isolated zero voltage switched (ZVS) PWM full bridge (FB) converters to charge the high voltage battery in the charger of electric vehicle (EV). EV battery chargers have several challenges such as high efficiency, high reliability, low cost, isolation, and high power density. The cost of magnetic and filter components in the battery charger is reduced when switching frequency is increased. The increase in the switching frequency increases switching losses. ZVS is used to reduce switching losses and to operate the converter in the battery charger at high frequency. The performance of each of the three converters is evaluated on the basis of ZVS range, dead times of the switches, conduction losses of switches, circulating current stress, circulating energy, duty cycle loss, and efficiency. The limitations and merits of each PWM FB converter are reviewed. The converter with broader ZVS range, high efficiency and low switch stresses is selected for battery charger applications in EV.

Keywords: Electric vehicle, PWM FB converter, zero voltage switching, circulating energy, duty cycle loss, battery charger.

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55 Novel Intrinsic Conducting Polymer Current Limiting Device (CLD) for Surge Protection

Authors: Noor H Jabarullah

Abstract:

In the past many uneconomic solutions for limitation and interruption of short-circuit currents in low power applications have been introduced, especially polymer switch based on the positive temperature coefficient of resistance (PCTR) concept. However there are many limitations in the active material, which consists of conductive fillers. This paper presents a significantly improved and simplified approach that replaces the existing current limiters with faster switching elements. Its elegance lies in the remarkable simplicity and low-cost processes of producing the device using polyaniline (PANI) doped with methane-sulfonic acid (MSA). Samples characterized as lying in the metallic and critical regimes of metal insulator transition have been studied by means of electrical performance in the voltage range from 1V to 5 V under different environmental conditions. Moisture presence is shown to increase the resistivity and also improved its current limiting performance. Additionally, the device has also been studied for electrical resistivity in the temperature range 77 K-300 K. The temperature dependence of the electrical conductivity gives evidence for a transport mechanism based on variable range hopping in three dimensions.

Keywords: Conducting polymer, current limiter, intrinsic, moisture dependence, polyaniline, resettable, surge protection.

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54 A Comparative Study on Optimized Bias Current Density Performance of Cubic ZnB-GaN with Hexagonal 4H-SiC Based Impatts

Authors: Arnab Majumdar, Srimani Sen

Abstract:

In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p+pnn+ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×108 A/m2. The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×108 A/m2.

Keywords: Cubic ZnB-GaN, hexagonal 4H-SiC, Double drift impatt diode, millimeter wave, optimized bias current density, wide band gap semiconductor.

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53 Fabrication and Characterization of CdS Nanoparticles Annealed by using Different Radiations

Authors: Aneeqa Sabah, Saadat Anwar Siddiqi, Salamat Ali

Abstract:

The systematic manipulations of shapes and sizes of inorganic compounds greatly benefit the various application fields including optics, magnetic, electronics, catalysis and medicine. However shape control has been much more difficult to achieve. Hence exploration of novel method for the preparation of differently shaped nanoparticles is challenging research area. II-VI group of semiconductor cadmium sulphide (CdS) nanostructure with different morphologies (such as, acicular like, mesoporous, spherical shapes) and of crystallite sizes vary from 11 to 16 nm were successfully synthesized by chemical aqueous precipitation of Cd2+ ions with homogeneously released S2- ions from decomposition of cadmium sulphate (CdSO4) and thioacetamide (CH3CSNH2) by annealing at different radiations (microwave, ultrasonic and sunlight) with matter and systematic research has been done for various factors affecting the controlled growth rate of CdS nanoparticles. The obtained nanomaterials have been characterized by X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Thermogravometric (DSC-TGA) analysis and Scanning Electron Microscopy (SEM). The result indicates that on increasing the reaction time particle size increases but on increasing the molar ratios grain size decreases.

Keywords: CdS nanoparticles, Morphology, Oxidation, Radiations

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52 Formation of (Ga,Mn)N Dilute Magnetic Semiconductor by Manganese Ion Implantation

Authors: N.S. Pradhan, S.K. Dubey, A. D.Yadav, Arvind Singh, D.C. Kothari

Abstract:

Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 325 keV Mn+ ions for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at 3500 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD of the sample implanted with various ion fluences showed the presence of different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N. However, the compositions of these phases were found to be depended on the ion fluence. AFM images of non-implanted sample showed micrograph with rms surface roughness 2.17 nm. Whereas samples implanted with the various fluences showed the presence of nano clusters on the surface of GaN. The shape, size and density of the clusters were found to vary with respect to ion fluence. Magnetic moment versus applied field curves of the samples implanted with various fluences exhibit the hysteresis loops. The Curie temperature estimated from zero field cooled and field cooled curves for the samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0 x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K respectively.

Keywords: GaN, Ion implantation, XRD, AFM, SQUID

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51 Effects of Dopant Concentrations on Radiative Properties of Nanoscale Multilayer with Coherent Formulation for Visible Wavelengths

Authors: S. A. A. Oloomi , M. Omidpanah

Abstract:

Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .

Keywords: Dopant Concentrations, Radiative Properties, Nanoscale Multilayer, Coherent Formulation, Visible Wavelengths

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50 Hybrid Pulse Width Modulation Techniques for the Reduction of Switching Losses and Voltage Harmonics in Cascaded Multilevel Inverters

Authors: Venkata Reddy Kota

Abstract:

These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.

Keywords: Hybrid PWM techniques, Cascaded Multilevel Inverters, Switching loss minimization.

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49 Evaluation of Torsional Efforts on Thermal Machines Shaft with Gas Turbine resulting of Automatic Reclosing

Authors: Alvaro J. P. Ramos, Wellington S. Mota, Yendys S. Dantas

Abstract:

This paper analyses the torsional efforts in gas turbine-generator shafts caused by high speed automatic reclosing of transmission lines. This issue is especially important for cases of three phase short circuit and unsuccessful reclosure of lines in the vicinity of the thermal plant. The analysis was carried out for the thermal plant TERMOPERNAMBUCO located on Northeast region of Brazil. It is shown that stress level caused by lines unsuccessful reclosing can be several times higher than terminal three-phase short circuit. Simulations were carried out with detailed shaft torsional model provided by machine manufacturer and with the “Alternative Transient Program – ATP" program [1]. Unsuccessful three phase reclosing for selected lines in the area closed to the plant indicated most critical cases. Also, reclosing first the terminal next to the gas turbine gererator will lead also to the most critical condition. Considering that the values of transient torques are very sensible to the instant of reclosing, simulation of unsuccessful reclosing with statistics ATP switch were carried out for determination of most critical transient torques for each section of the generator turbine shaft.

Keywords: Torsional Efforts, Thermal Machine, GasTurbine, Automatic Reclosing.

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48 Optimization of HALO Structure Effects in 45nm p-type MOSFETs Device Using Taguchi Method

Authors: F. Salehuddin, I. Ahmad, F. A. Hamid, A. Zaharim, H. A. Elgomati, B. Y. Majlis, P. R. Apte

Abstract:

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm.

Keywords: Optimization, p-type MOSFETs device, HALO Structure, Taguchi Method.

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47 Learning Mandarin Chinese as a Foreign Language in a Bilingual Context: Adult Learners’ Perceptions of the Use of L1 Maltese and L2 English in Mandarin Chinese Lessons in Malta

Authors: Christiana Gauci-Sciberras

Abstract:

The first language (L1) could be used in foreign language teaching and learning as a pedagogical tool to scaffold new knowledge in the target language (TL) upon linguistic knowledge that the learner already has. In a bilingual context, code-switching between the two languages usually occurs in classrooms. One of the reasons for code-switching is because both languages are used for scaffolding new knowledge. This research paper aims to find out why both the L1 (Maltese) and the L2 (English) are used in the classroom of Mandarin Chinese as a foreign language (CFL) in the bilingual context of Malta. This research paper also aims to find out the learners’ perceptions of the use of a bilingual medium of instruction. Two research methods were used to collect qualitative data; semi-structured interviews with adult learners of Mandarin Chinese and lesson observations. These two research methods were used so that the data collected in the interviews would be triangulated with data collected in lesson observations. The L1 (Maltese) is the language of instruction mostly used. The teacher and the learners switch to the L2 (English) or to any other foreign language according to the need at a particular instance during the lesson.

Keywords: Chinese, bilingual, pedagogical purpose of L1 and L2, CFL acquisition.

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46 Synthesis and Characterization of Nickel and Sulphur Sensitized Zinc Oxide Structures

Authors: Ella C. Linganiso, Bonex W. Mwakikunga, Trilock Singh, Sanjay Mathur, Odireleng M. Ntwaeaborwa

Abstract:

The use of nanostructured semiconducting material to catalyze degradation of environmental pollutants still receives much attention to date. One of the desired characteristics for pollutant degradation under ultra-violet visible light is the materials with extended carrier charge separation that allows for electronic transfer between the catalyst and the pollutants. In this work, zinc oxide n-type semiconductor vertically aligned structures were fabricated on silicon (100) substrates using the chemical bath deposition method. The as-synthesized structures were treated with nickel and sulphur. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy were used to characterize the phase purity, structural dimensions and elemental composition of the obtained structures respectively. Photoluminescence emission measurements showed a decrease in both the near band edge emission as well as the defect band emission upon addition of nickel and sulphur with different concentrations. This was attributed to increased charger-carrier-separation due to the presence of Ni-S material on ZnO surface, which is linked to improved charge transfer during photocatalytic reactions.

Keywords: Carrier-charge-separation, nickel, sulphur, zinc oxide, photoluminescence.

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45 Academic Influence of Social Network Sites on the Collegiate Performance of Technical College Students

Authors: Jameson McFarlane, Thorne J. McFarlane, Leon Bernard

Abstract:

Social network sites (SNS) is an emerging phenomenon that is here to stay. The popularity and the ubiquity of the SNS technology are undeniable. Because most SNS are free and easy to use people from all walks of life and from almost any age are attracted to that technology. College age students are by far the largest segment of the population using SNS. Since most SNS have been adapted for mobile devices, not only do you find students using this technology in their study, while working on labs or on projects, a substantial number of students have been found to use SNS even while listening to lectures. This study found that SNS use has a significant negative impact on the grade point average of college students particularly in the first semester. However, this negative impact is greatly diminished by the end of the third semester partly because the students have adjusted satisfactorily to the challenges of college or because they have learned how to adequately manage their time. It was established that the kinds of activities the students are engaged in during the SNS use are the leading factor affecting academic performance. Of those activities, using SNS during a lecture or while studying is the foremost contributing factor to lower academic performance. This is due to “cognitive” or “information” bottleneck, a condition in which the students find it very difficult to multitask or to switch between resources leading to inefficiency in information retention and thus, educational performance.

Keywords: Social network sites, social network analysis, regression coefficient, psychological engagement.

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44 Pilot Induced Oscillations Adaptive Suppression in Fly-By-Wire Systems

Authors: Herlandson C. Moura, Jorge H. Bidinotto, Eduardo M. Belo

Abstract:

The present work proposes the development of an adaptive control system which enables the suppression of Pilot Induced Oscillations (PIO) in Digital Fly-By-Wire (DFBW) aircrafts. The proposed system consists of a Modified Model Reference Adaptive Control (M-MRAC) integrated with the Gain Scheduling technique. The PIO oscillations are detected using a Real Time Oscillation Verifier (ROVER) algorithm, which then enables the system to switch between two reference models; one in PIO condition, with low proneness to the phenomenon and another one in normal condition, with high (or medium) proneness. The reference models are defined in a closed loop condition using the Linear Quadratic Regulator (LQR) control methodology for Multiple-Input-Multiple-Output (MIMO) systems. The implemented algorithms are simulated in software implementations with state space models and commercial flight simulators as the controlled elements and with pilot dynamics models. A sequence of pitch angles is considered as the reference signal, named as Synthetic Task (Syntask), which must be tracked by the pilot models. The initial outcomes show that the proposed system can detect and suppress (or mitigate) the PIO oscillations in real time before it reaches high amplitudes.

Keywords: Adaptive control, digital fly-by-wire, oscillations suppression, PIO.

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43 The Analysis of Radial/Axial Error Motion on a Precision Rotation Stage

Authors: Jinho Kim, Dongik Shin, Deokwon Yun, Changsoo Han

Abstract:

Rotating stages in semiconductor, display industry and many other fields require challenging accuracy to perform their functions properly. Especially, Axis of rotation error on rotary system is significant; such as the spindle error motion of the aligner, wire bonder and inspector machine which result in the poor state of manufactured goods. To evaluate and improve the performance of such precision rotary stage, unessential movements on the other 5 degrees of freedom of the rotary stage must be measured and analyzed. In this paper, we have measured the three translations and two tilt motions of a rotating stage with high precision capacitive sensors. To obtain the radial error motion from T.I.R (Total Indicated Reading) of radial direction, we have used Donaldson's reversal technique. And the axial components of the spindle tilt error motion can be obtained accurately from the axial direction outputs of sensors by Estler face motion reversal technique. Further more we have defined and measured the sensitivity of positioning error to the five error motions.

Keywords: Donaldson's reversal methods, Estler face motionreversal method, Error motion, sensitivity, T.I.R (Total IndicatedReading).

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42 Variable Input Range Continuous-time Switched Current Delta-sigma Analog Digital Converter for RFID CMOS Biosensor Applications

Authors: Boram Kim, Shigeyasu Uno, Kazuo Nakazato

Abstract:

Continuous-time delta-sigma analog digital converter (ADC) for radio frequency identification (RFID) complementary metal oxide semiconductor (CMOS) biosensor has been reported. This delta-sigma ADC is suitable for digital conversion of biosensor signal because of small process variation, and variable input range. As the input range of continuous-time switched current delta-sigma ADC (Dynamic range : 50 dB) can be limited by using current reference, amplification of biosensor signal is unnecessary. The input range is switched to wide input range mode or narrow input range mode by command of current reference. When the narrow input range mode, the input range becomes ± 0.8 V. The measured power consumption is 5 mW and chip area is 0.31 mm^2 using 1.2 um standard CMOS process. Additionally, automatic input range detecting system is proposed because of RFID biosensor applications.

Keywords: continuous time, delta sigma, A/D converter, RFID, biosensor, CMOS

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41 Trap Assisted Tunneling Model for Gate Current in Nano Scale MOSFET with High-K Gate Dielectrics

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling currents have been calculated as a function of gate voltage for different gate dielectrics structures such as HfO2, Al2O3 and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The proposed model is compared and contrasted with santaurus simulation results to verify the accuracy of the model and excellent agreement is found between the analytical and simulated data. It is observed that proposed analytical model is suitable for different highk gate dielectrics simply by adjusting two fitting parameters. It was also shown that gate leakages reduced with the introduction of high-k gate dielectric in place of SiO2.

Keywords: Analytical model, High-k gate dielectrics, inelastic trap assisted tunneling, metal–oxide–semiconductor (MOS) devices.

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40 Fuzzy Logic System for Tractive Performance Prediction of an Intelligent Air-Cushion Track Vehicle

Authors: Altab Hossain, Ataur Rahman, A. K. M. Mohiuddin, Yulfian Aminanda

Abstract:

Fuzzy logic system (FLS) is used in this study to predict the tractive performance in terms of traction force, and motion resistance for an intelligent air cushion track vehicle while it operates in the swamp peat. The system is effective to control the intelligent air –cushion system with measuring the vehicle traction force (TF), motion resistance (MR), cushion clearance height (CH) and cushion pressure (CP). Ultrasonic displacement sensor, pull-in solenoid electromagnetic switch, pressure control sensor, micro controller, and battery pH sensor are incorporated with the Fuzzy logic system to investigate experimentally the TF, MR, CH, and CP. In this study, a comparison for tractive performance of an intelligent air cushion track vehicle has been performed with the results obtained from the predicted values of FLS and experimental actual values. The mean relative error of actual and predicted values from the FLS model on traction force, and total motion resistance are found as 5.58 %, and 6.78 % respectively. For all parameters, the relative error of predicted values are found to be less than the acceptable limits. The goodness of fit of the prediction values from the FLS model on TF, and MR are found as 0.90, and 0.98 respectively.

Keywords: Cushion pressure, Fuzzy logic, Motion resistance, Traction force.

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39 InAlGaN Quaternary Multi-Quantum Wells UVLaser Diode Performance and Characterization

Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The InAlGaN alloy has only recently began receiving serious attention into its growth and application. High quality InGaN films have led to the development of light emitting diodes (LEDs) and blue laser diodes (LDs). The quaternary InAlGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report an ultraviolet (UV) quaternary InAlGaN multi-quantum wells (MQWs) LD study by using the simulation program of Integrated System Engineering (ISE TCAD). Advanced physical models of semiconductor properties were used in order to obtain an optimized structure. The device performance which is affected by piezoelectric and thermal effects was studied via drift-diffusion model for carrier transport, optical gain and loss. The optical performance of the UV LD with different numbers of quantum wells was numerically investigated. The main peak of the emission wavelength for double quantum wells (DQWs) was shifted from 358 to 355.8 nm when the forward current was increased. Preliminary simulated results indicated that better output performance and lower threshold current could be obtained when the quantum number is four, with output power of 130 mW and threshold current of 140 mA.

Keywords: Nitride semiconductors, InAlGaN quaternary, UVLD, numerical simulation.

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38 Impact on Course Registration and SGPA of the Students of BSc in EEE Programme due to Online Teaching during the COVID-19 Pandemic

Authors: Muhibul Haque Bhuyan

Abstract:

Most educational institutions were compelled to switch over to the online mode of teaching, learning, and assessment due to the lockdown when the corona pandemic started around the globe in the early part of the year 2020. However, they faced a unique set of challenges in delivering knowledge and skills to their students as well as formulating a proper assessment policy. This paper investigates whether there is an impact on the student Semester Grade Point Average (SGPA) due to the online mode of teaching and learning assessment at the Department of Electrical and Electronic Engineering (EEE) of Southeast University (SEU). Details of student assessments are discussed. Then students’ grades were analyzed to find out the impact on SGPA based on the z-test by finding the standard deviation (). It also pointed out the challenges associated with the online classes and assessment strategies to be adopted during the online assessment. The student admission, course advising, and registration statistics were also presented in several tables and analyzed based on the change in percentage to observe the impact on it due to the pandemic. In summary, it was observed that the students’ SGPAs are not affected but student course advising and registration were affected slightly by the pandemic. Finally, the paper provides some recommendations to improve the online teaching, learning, assessment, and evaluation system.

Keywords: electrical and electronic engineering students, impact on course grading and SGPA, online assessment, online teaching, student registration, semester result

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37 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

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36 Tractive Performance Prediction for Intelligent Air-Cushion Track Vehicle: Fuzzy Logic Approach

Authors: Altab Hossain, Ataur Rahman, A. K. M. Mohiuddin, Yulfian Aminanda

Abstract:

Fuzzy logic approach is used in this study to predict the tractive performance in terms of traction force, and motion resistance for an intelligent air cushion track vehicle while it operates in the swamp peat. The system is effective to control the intelligent air –cushion system with measuring the vehicle traction force (TF), motion resistance (MR), cushion clearance height (CH) and cushion pressure (CP). Sinkage measuring sensor, magnetic switch, pressure sensor, micro controller, control valves and battery are incorporated with the Fuzzy logic system (FLS) to investigate experimentally the TF, MR, CH, and CP. In this study, a comparison for tractive performance of an intelligent air cushion track vehicle has been performed with the results obtained from the predicted values of FLS and experimental actual values. The mean relative error of actual and predicted values from the FLS model on traction force, and total motion resistance are found as 5.58 %, and 6.78 % respectively. For all parameters, the relative error of predicted values are found to be less than the acceptable limits. The goodness of fit of the prediction values from the FLS model on TF, and MR are found as 0.90, and 0.98 respectively.

Keywords: Cushion pressure, Fuzzy logic, Motion resistance, Traction force.

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35 Electronic Nose Based On Metal Oxide Semiconductor Sensors as an Alternative Technique for the Spoilage Classification of Oat Milk

Authors: A. Deswal, N. S. Deora, H. N. Mishra

Abstract:

The aim of the present study was to develop a rapid method for electronic nose for online quality control of oat milk. Analysis by electronic nose and bacteriological measurements were performed to analyze spoilage kinetics of oat milk samples stored at room temperature and refrigerated conditions for up to 15 days. Principal component analysis (PCA), Discriminant Factorial Analysis (DFA) and Soft Independent Modelling by Class Analogy (SIMCA) classification techniques were used to differentiate the samples of oat milk at different days. The total plate count (bacteriological method) was selected as the reference method to consistently train the electronic nose system. The e-nose was able to differentiate between the oat milk samples of varying microbial load. The results obtained by the bacteria total viable countsshowed that the shelf-life of oat milk stored at room temperature and refrigerated conditions were 20hrs and 13 days, respectively. The models built classified oat milk samples based on the total microbial population into “unspoiled” and “spoiled”.

Keywords: Electronic-nose, bacteriological, shelf-life, classification.

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34 Seamless Handover in Urban 5G-UAV Systems Using Entropy Weighted Method

Authors: Anirudh Sunil Warrier, Saba Al-Rubaye, Dimitrios Panagiotakopoulos, Gokhan Inalhan, Antonios Tsourdos

Abstract:

The demand for increased data transfer rate and network traffic capacity has given rise to the concept of heterogeneous networks. Heterogeneous networks are wireless networks, consisting of devices using different underlying radio access technologies (RAT). For Unmanned Aerial Vehicles (UAVs) this enhanced data rate and network capacity are even more critical especially in their applications of medicine, delivery missions and military. In an urban heterogeneous network environment, the UAVs must be able switch seamlessly from one base station (BS) to another for maintaining a reliable link. Therefore, seamless handover in such urban environments has become a major challenge. In this paper, a scheme to achieve seamless handover is developed, an algorithm based on Received Signal Strength (RSS) criterion for network selection is used and Entropy Weighted Method (EWM) is implemented for decision making. Seamless handover using EWM decision-making is demonstrated successfully for a UAV moving across fifth generation (5G) and long-term evolution (LTE) networks via a simulation level analysis. Thus, a solution for UAV-5G communication, specifically the mobility challenge in heterogeneous networks is solved and this work could act as step forward in making UAV-5G architecture integration a possibility.

Keywords: Air to ground, A2G, fifth generation, 5G, handover, mobility, unmanned aerial vehicle, UAV, urban environments.

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33 Integrated Flavor Sensor Using Microbead Array

Authors: Ziba Omidi, Min-Ki Kim

Abstract:

This research presents the design, fabrication and application of a flavor sensor for an integrated electronic tongue and electronic nose that can allow rapid characterization of multi-component mixtures in a solution. The odor gas and liquid are separated using hydrophobic porous membrane in micro fluidic channel. The sensor uses an array composed of microbeads in micromachined cavities localized on silicon wafer. Sensing occurs via colorimetric and fluorescence changes to receptors and indicator molecules that are attached to termination sites on the polymeric microbeads. As a result, the sensor array system enables simultaneous and near-real-time analyses using small samples and reagent volumes with the capacity to incorporate significant redundancies. One of the key parts of the system is a passive pump driven only by capillary force. The hydrophilic surface of the fluidic structure draws the sample into the sensor array without any moving mechanical parts. Since there is no moving mechanical component in the structure, the size of the fluidic structure can be compact and the fabrication becomes simple when compared to the device including active microfluidic components. These factors should make the proposed system inexpensive to mass-produce, portable and compatible with biomedical applications.

Keywords: Optical Sensor, Semiconductor manufacturing, Smell sensor, Taste sensor.

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32 Semi Classical Three-Valley Monte Carlo Simulation Analysis of Steady-State and Transient Electron Transport within Bulk Ga0.38In0.62P

Authors: N. Massoum, B. Bouazza, H. Tahir, C. Sayah, A. Guen Bouazza

Abstract:

to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material

Keywords: Monte Carlo simulation, steady-state electron transport, transient electron transport, alloy scattering.

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31 Permanent Reduction of Arc Flash Energy to Safe Limit on Line Side of 480 Volt Switchgear Incomer Breaker

Authors: Md Abid Khan

Abstract:

A recognized engineering challenge is related to personnel protection from fatal arc flash incident energy in the line side of the 480-volt switchgears incomer breakers during maintenance activities. The incident energy is typically high due to slow fault clearance and it can be higher than the available personnel protective equipment (PPE) ratings. A fault on the line side of the 480 Volt breaker is cleared by breakers or fuses in the upstream higher voltage system (4160 Volt or higher). The current reflection in the higher voltage upstream system for a fault in the 480-volt switchgear is low, the clearance time is slower and the inversely proportional incident energy is hence higher. The installation of overcurrent protection at 480-volt system upstream of the incomer breaker will operate fast enough and trips the upstream higher voltage breaker when a fault develops at the incomer breaker. Therefore, fault current reduction as reflected in the upstream higher voltage system is eliminated. Since the fast overcurrent protection is permanently installed, it is always functional, do not require human interventions and eliminates exposure to human errors. It is installed at the maintenance activity location and its operations can be locally monitored by craftsmen during maintenance activities.

Keywords: Arc flash, mitigation, maintenance switch, energy level.

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