Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3

Search results for: C. Sayah

3 A Physically-Based Analytical Model for Reduced Surface Field Laterally Double Diffused MOSFETs

Authors: M. Abouelatta, A. Shaker, M. El-Banna, G. T. Sayah, C. Gontrand, A. Zekry

Abstract:

In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of the n-channel Laterally Double-diffused MOSFET (LDMOS) is presented. The basic physical effects like velocity saturation, mobility reduction, and nonuniform impurity concentration in the channel are taken into consideration. The analytical model is implemented using MATLAB. A comparison of the simulations from technology computer aided design (TCAD) and that from the proposed analytical model, at room temperature, shows a satisfactory accuracy which is less than 5% for the whole voltage domain.

Keywords: LDMOS, MATLAB, RESURF, modeling, TCAD.

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2 CO2 Abatement by Methanol Production from Flue-Gas in Methanol Plant

Authors: A. K. Sayah, Sh. Hosseinabadi, M. Farazar

Abstract:

This study investigates CO2 mitigation by methanol synthesis from flue gas CO2 and H2 generation through water electrolysis. Electrolytic hydrogen generation is viable provided that the required electrical power is supplied from renewable energy resources; whereby power generation from renewable resources is yet commercial challenging. This approach contribute to zero-emission, moreover it produce oxygen which could be used as feedstock for chemical process. At ZPC, however, oxygen would be utilized through partial oxidation of methane in autothermal reactor (ATR); this makes ease the difficulties of O2 delivery and marketing. On the other hand, onboard hydrogen storage and consumption; in methanol plant; make the project economically more competitive.

Keywords: Biomass, CO2 abatement, flue gas recovery, renewable energy, sustainable development.

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1 Semi Classical Three-Valley Monte Carlo Simulation Analysis of Steady-State and Transient Electron Transport within Bulk Ga0.38In0.62P

Authors: N. Massoum, B. Bouazza, H. Tahir, C. Sayah, A. Guen Bouazza

Abstract:

to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material

Keywords: Monte Carlo simulation, steady-state electron transport, transient electron transport, alloy scattering.

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