to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material<\/p>\r\n","references":"[1] S.-L. Fu, T. P. Chin, M. C. Ho, C. W. Tu, and P. M. Asbeck \"Impact ionization coefficients in (100) GaInP\", American Institute of Physics,\r\n1995.\r\n[2] U. V. Bhapkar and M. S. Shur, \"Ensemble Monte Carlo study of electron\r\ntransport in wurtzite InN\", J. Appl. Phys., 1997, 82, 1649-1654.\r\n[3] H. Arabshahi, M. R. Khalvati, and M. Rezaee \"Temperature and Doping\r\nDependencies of Electron Mobility in InAs, AlAs and AlGaAs at High\r\nElectric Field Application\" Brazilian Journal of Physics, September, 2008\r\n[4] H. Arabshahi, Modern Physics Letters B. 21, 199 (2007).\r\n[5] C. Moglestue, Monte Carlo Simulation of Semiconductor Devices 1993 pub. Chapman and Hall.\r\n[6] M. Allali, C. B. Sorensen, E. Veje, and P. Tidemand-Petersson, Phys. Rev.\r\nB 48, 4398 (1993).\r\n[7] D. C. Cameron, L. D. Irving and C. R.Whitehouse, \"Hot carrier relaxation\r\nin InP and GaAs\", Thin Solid Films., 1983, 103, 61-66.\r\n[8] B. E. Foutz, L. F. Eastman, U. V. Bhapkar and M. Shur, \"Full band Monte Carlo simulation of zincblende GaN MESFET?s including realistic impact ionization rates\", Appl. Phys. Lett.,1997, 70, 2849-2854\r\n[9] M. Levinshtein, S. Rumyantsev \"Handbook Series on Semiconductor\r\nParameters\" Volume 2 Ternary and Quaternary III-V Compounds\r\n[10] E. O. Kane, \"Band structure calculation in group III and IV materials\",\r\nJ. Phys. Chem. Solids, 1957, 1, 249-253\r\n[11] A. Hamdoune, B. Bouazza, A. Guen-Bouazza, A. Lallam et N. Chabane-\r\nSari \"D'eveloppement de la mthode de Monte Carlo pour le calcul des interactions et du transport lectrique dans les semi-conducteurs ternaires\" Afrique Science (2007).\r\n[12] C. Sayah, B. Bouazza, A. G. Bouazza et N. Chabane-Sari \"Etude th'eorique du transport 'electronique par la simulation Monte Carlo dans le quaternaire In 0.863 Ga0. 137 As0. 3P0.7\" Afrique SCIENCE 04(2) (2008)\r\n186-198 ISSN 1813","publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 70, 2012"}