TY - JFULL AU - N. Massoum and B. Bouazza and H. Tahir and C. Sayah and A. Guen Bouazza PY - 2012/11/ TI - Semi Classical Three-Valley Monte Carlo Simulation Analysis of Steady-State and Transient Electron Transport within Bulk Ga0.38In0.62P T2 - International Journal of Physical and Mathematical Sciences SP - 1428 EP - 1431 VL - 6 SN - 1307-6892 UR - https://publications.waset.org/pdf/14638 PU - World Academy of Science, Engineering and Technology NX - Open Science Index 70, 2012 N2 - to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material ER -