Search results for: Raman Amplifier DiscreteRaman Amplifier (DRA)

Authors: S. Zouari, H. Daoud, M. Loulou, P. Loumeau, N. Masmoudi

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A wideband 2-1-1 cascaded ΣΔ modulator with a single-bit quantizer in the two first stages and a 4-bit quantizer in the final stage is developed. To reduce sensitivity of digital-to-analog converter (DAC) nonlinearities in the feedback of the last stage, dynamic element matching (DEM) is introduced. This paper presents two modelling approaches: The first is MATLAB description and the second is VHDL-AMS modelling of the proposed architecture and exposes some high-level-simulation results allowing a behavioural study. The detail of both ideal and non-ideal behaviour modelling are presented. Then, the study of the effect of building blocks nonidealities is presented; especially the influences of nonlinearity, finite operational amplifier gain, amplifier slew rate limitation and capacitor mismatch. A VHDL-AMS description presents a good solution to predict system-s performances and can provide sensitivity curves giving the impact of nonidealities on the system performance.

Keywords: behavioural study, DAC nonlinearity, DEM, ΣΔ modulator, VHDL-AMS modelling.

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Authors: Yeon-kug Moon, Kang-Yoon Lee, Yun-Jae Won, Seung-Ok Lim

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This paper describes a low-voltage and low-power channel selection analog front end with continuous-time low pass filters and highly linear programmable gain amplifier (PGA). The filters were realized as balanced Gm-C biquadratic filters to achieve a low current consumption. High linearity and a constant wide bandwidth are achieved by using a new transconductance (Gm) cell. The PGA has a voltage gain varying from 0 to 65dB, while maintaining a constant bandwidth. A filter tuning circuit that requires an accurate time base but no external components is presented. With a 1-Vrms differential input and output, the filter achieves -85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA were implemented in a 0.18um 1P6M n-well CMOS process. They consume 3.2mW from a 1.8V power supply and occupy an area of 0.19mm2.

Keywords: component ; Channel selection filters, DC offset, programmable gain amplifier, tuning circuit

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Authors: Samad Nejatian, Vahideh Rezaie, Vahid Asadpour

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This paper presents a novel approach for the design of microwave circuits using Adaptive Network Fuzzy Inference Optimizer (ANFIO). The method takes advantage of direct synthesis of subsections of the amplifier using very fast and accurate ANFIO models based on exact simulations using ADS. A mapping from course space to fine space known as space mapping is also used. The proposed synthesis approach takes into account the noise and scattering parameters due to parasitic elements to achieve optimal results. The overall ANFIO system is capable of designing different LNAs at different noise and scattering criteria. This approach offers significantly reduced time in the design of microwave amplifiers within the validity range of the ANFIO system. The method has been proven to work efficiently for a 2.4GHz LNA example. The S21 of 10.1 dB and noise figure (NF) of 2.7 dB achieved for ANFIO while S21 of 9.05 dB and NF of 2.6 dB achieved for ANN.

Keywords: fuzzy system, low noise amplifier, microwaveamplifier, space mapping

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Authors: Debajyoti Mishra, Urmila Bhanja

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In this paper, a novel fuzzy approach is developed while solving the Dynamic Routing and Wavelength Assignment (DRWA) problem in optical networks with Wavelength Division Multiplexing (WDM). In this work, the effect of nonlinear and linear impairments such as Four Wave Mixing (FWM) and amplifier spontaneous emission (ASE) noise are incorporated respectively. The novel algorithm incorporates fuzzy logic controller (FLC) to reduce the effect of FWM noise and ASE noise on a requested lightpath referred in this work as FWM aware fuzzy dynamic routing and wavelength assignment algorithm. The FWM crosstalk products and the static FWM noise power per link are pre computed in order to reduce the set up time of a requested lightpath, and stored in an offline database. These are retrieved during the setting up of a lightpath and evaluated online taking the dynamic parameters like cost of the links into consideration.

Keywords: Amplifier spontaneous emission (ASE), Dynamic routing and wavelength assignment, Four wave mixing (FWM), Fuzzy rule based system (FRBS).

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Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

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In this paper, the design of wide-swing constant transconductance (g_m) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (G_m) generated by the constant g_m bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in G_m with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the g_m variation is eventually concluded at between -3 % to 7 %. With the slight variation in the g_m value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S₂₁) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant g_m circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

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This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: Finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier.

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Authors: Mehmet Nefes, Selman Demirel, Hasan H. Ertok, Cenk Sen

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A typical reliability engineering problem regarding communication satellites has been considered to determine redundancy allocation scheme of power amplifiers within payload transponder module, whose dominant function is to amplify power levels of the received signals from the Earth, through maximizing reliability against mass, power, and other technical limitations. Adding each redundant power amplifier component increases not only reliability but also hardware, testing, and launch cost of a satellite. This study investigates a multi-objective approach used in order to solve Redundancy Allocation Problem (RAP) for a communication satellite payload transponder, focusing on design cost due to redundancy and reliability factors. The main purpose is to find the optimum power amplifier redundancy configuration satisfying reliability and capacity thresholds simultaneously instead of analyzing respectively or independently. A mathematical model and calculation approach are instituted including objective function definitions, and then, the problem is solved analytically with different input parameters in MATLAB environment. Example results showed that payload capacity and failure rate of power amplifiers have remarkable effects on the solution and also processing time.

Keywords: Communication satellite payload, multi-objective optimization, redundancy allocation problem, reliability, transponder.

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Authors: Hasmayadi Abdul Majid, Rohana Musa

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This paper presents the development of a 38.5 kS/s 10-bit low power SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and SAR digital logic to create 10 effective bits while consuming less than 7.8 mW with a 3.3 V power supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC.

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Authors: Emilija Miletic, Milos Krstic, Maxim Piz, Michael Methfessel

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In this work we present a solution for DAGC (Digital Automatic Gain Control) in WLAN receivers compatible to IEEE 802.11a/g standard. Those standards define communication in 5/2.4 GHz band using Orthogonal Frequency Division Multiplexing OFDM modulation scheme. WLAN Transceiver that we have used enables gain control over Low Noise Amplifier (LNA) and a Variable Gain Amplifier (VGA). The control over those signals is performed in our digital baseband processor using dedicated hardware block DAGC. DAGC in this process is used to automatically control the VGA and LNA in order to achieve better signal-to-noise ratio, decrease FER (Frame Error Rate) and hold the average power of the baseband signal close to the desired set point. DAGC function in baseband processor is done in few steps: measuring power levels of baseband samples of an RF signal,accumulating the differences between the measured power level and actual gain setting, adjusting a gain factor of the accumulation, and applying the adjusted gain factor the baseband values. Based on the measurement results of RSSI signal dependence to input power we have concluded that this digital AGC can be implemented applying the simple linearization of the RSSI. This solution is very simple but also effective and reduces complexity and power consumption of the DAGC. This DAGC is implemented and tested both in FPGA and in ASIC as a part of our WLAN baseband processor. Finally, we have integrated this circuit in a compact WLAN PCMCIA board based on MAC and baseband ASIC chips designed from us.

Keywords: WLAN, AGC, RSSI, baseband processor

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Authors: Haruka Mikamori, Koyu Chinen

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An optimized design of E/O and O/E for access points of WiMAX RoF was carried out by evaluating RCE. The use of the DFB-LD, a low input-impedance driving, a low distortion PIN-PD, and a high gain EPHEMT amplifier is promising the cost-effective design. For the uplink RoF design, the use of EDFA and EP-HEMT amplifiers is necessity.

Keywords: WiMAX, RoF, RCE, RAU, Access Point

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Authors: Inderpreet Kaur, Neena Gupta

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In this paper, the gain spectrum of EDFA has been broadened by implementing HTE configuration for S and C band. On using this configuration an amplification bandwidth of 76nm ranging from 1479nm to 1555nm with a peak gain of 26dB has been obtained.

Keywords: C band, DWDM system, EDFA, Gain, HTE, Hybrid Fiber Amplifier, S band.

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Authors: Banaz Omer Rasheed, Parexan M. Aljaff

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In this paper, a wide band gain–flattened discrete Raman amplifiers utilizing four optimum pump wavelengths is demonstrated.

Keywords: Fiber Raman Amplifiers, Optimization, WaveLength Division Multiplexing.

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Authors: Hasmayadi Abdul Majid, Yuzman Yusoff, Noor Shelida Salleh

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This paper presents the development of a single-ended 38.5 kS/s 10-bit programmable reference SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and a SAR digital logic to create 10 effective bits ADC. A programmable reference circuitry allows the ADC to operate with different input range from 0.6 V to 2.1 V. The ADC consumed less than 7.5 mW power with a 3 V supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC, Programmable Reference.

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Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

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The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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Authors: Kyunghoon Kim, Sungjoon Shim, Jun Tae Kim, Jong Tae Kim

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In a wireless communication system, a predistorter(PD) is often employed to alleviate nonlinear distortions due to operating a power amplifier near saturation, thereby improving the system performance and reducing the interference to adjacent channels. This paper presents a new adaptive polynomial digital predistorter(DPD). The proposed DPD uses Coordinate Rotation Digital Computing(CORDIC) processors and PD process by pipelined architecture. It is simpler and faster than conventional adaptive polynomial DPD. The performance of the proposed DPD is proved by MATLAB simulation.

Keywords: DPD, CORDIC.

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Authors: Wai Pan Chan, Minkyu Je

Abstract:

A precision CMOS chopping amplifier is adopted in this work to improve a CMOS temperature sensor high sensitive enough for intracranial temperature monitoring. An amplified temperature sensitivity of 18.8 ± 3*0.2 mV/oC is attained over the temperature range from 20 oC to 80 oC from a given 10 samples of the same wafer. The analog frontend design outputs the temperature dependent and the temperature independent signals which can be directly interfaced to a 10 bit ADC to accomplish an accurate temperature instrumentation system.

Keywords: Chopping, analog frontend, CMOS temperature sensor, traumatic brain injury (TBI), intracranial temperature monitoring.

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Authors: Roberto Gaudino, Antonino Nespola, Dario Zeolla, Stefano Straullu, Vittorio Curri, Gabriella Bosco, Roberto Cigliutti, Stefano Capriata, Paolo Solina.

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We demonstrate a 40Gbps downstream PON transmission based on PM-QPSK modulation using commercial DFB lasers without optical amplifier in the ODN, obtaining 40dB power budget. We discuss this solution within NG-PON2 architectures.

Keywords: DFB lasers, Optical Coherent Receiver, Passive Optical Networks.

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Authors: Mohsen Bagheri, Ahmad Afifi

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This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on Instrumentation amplifier and it is useful for reducing offset In Wheatstone Bridge. The obtained gain is 645 with 1μv/°c Equivalent drift and 1.58mw power consumption. A Schmitt trigger and multiplexer circuit control output node. a high speed counter is designed in this work .the proposed circuit is designed and simulated In 0.18μm CMOS technology with 1.8v power supply.

Keywords: Piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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Authors: P. Prasad Rao, K. Lal Kishore

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Pipeline ADCs are becoming popular at high speeds and with high resolution. This paper discusses the options of number of bits/stage conversion techniques in pipelined ADCs and their effect on Area, Speed, Power Dissipation and Linearity. The basic building blocks like op-amp, Sample and Hold Circuit, sub converter, DAC, Residue Amplifier used in every stage is assumed to be identical. The sub converters use flash architectures. The design is implemented using 0.18

Keywords: 1.5 bits/stage, Conversion Frequency, Redundancy Switched Capacitor Sample and Hold Circuit

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Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari

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A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.

Keywords: Low-voltage op amp, design , optimum design

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Authors: Isao Tomita

Abstract:

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2.

Keywords: All-silicon raman laser, FTTH, GE-PON, quasi-phase-matched structure, resonator.

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Authors: W. Paraguassu, S. Guerini, C. M. R. Remédios, P. T. C. Freire

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High Pressure Raman scattering measurements of KDP:Mn were performed at room temperatures. The X-ray powder diffraction patterns taken at room temperature by Rietveld refinement showed that doped samples of KDP-Mn have the same tetragonal structure of a pure KDP crystal, but with a contraction of the crystalline cell. The behavior of the Raman spectra, in particular the emergence of a new modes at 330 cm-1, indicates that KDP:Mn undergoes a structural phase transition with onset at around 4 GP. First principle density-functional theory (DFT) calculations indicate that tetrahedral rotation with pressure is predominantly around the c crystalline direction. Theoretical results indicates that pressure induced tetrahedral rotations leads to change tetrahedral neighborhood, activating librations/bending modes observed for high pressure phase of KDP:Mn with stronger Raman activity.

Keywords: Dipotassium molybdate, High pressure, Raman scattering, Phase transition, ab initio

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Authors: A. Sakavičius, A. Lukša, V. Nargelienė, V. Bukauskas, G. Astromskas, A. Šetkus

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We investigate the influence of annealing on the properties of a contact between graphene and metal (Au and Ni), using circular transmission line model (CTLM) contact geometry. Kelvin probe force microscopy (KPFM) and Raman spectroscopy are applied for characterization of the surface and interface properties. Annealing causes a decrease of the metal-graphene contact resistance for both Ni and Au.

Keywords: Graphene, Kelvin force probe microscopy, Raman spectroscopy.

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Authors: M.Yousefi, A.Vatanjou, F.Nazeri

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A fast settling multipath CMOS OTA for high speed switched capacitor applications is presented here. With the basic topology similar to folded-cascode, bandwidth and DC gain of the OTA are enhanced by adding extra paths for signal from input to output. Designed circuit is simulated with HSPICE using level 49 parameters (BSIM 3v3) in 0.35mm standard CMOS technology. DC gain achieved is 56.7dB and Unity Gain Bandwidth (UGB) obtained is 1.15GHz. These results confirm that adding extra paths for signal can improve DC gain and UGB of folded-cascode significantly.

Keywords: OTA (Operational Transconductance Amplifier), DC gain, Unity Gain Bandwidth (UGBW)

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Authors: P. Silapan, C. Chanapromma, T. Worachak

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This article proposes a current-mode square-rooting circuit using current follower transconductance amplifier (CTFA). The amplitude of the output current can be electronically controlled via input bias current with wide input dynamic range. The proposed circuit consists of only single CFTA. Without any matching conditions and external passive elements, the circuit is then appropriate for an IC architecture. The magnitude of the output signal is temperature-insensitive. The PSpice simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 1.96mW at ±1.5V supply voltages.

Keywords: CFTA, Current-mode, Square-rooting Circuit

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Authors: C. Ketviriyakit, W. Kongnun, C. Chanapromma, P. Silapan

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This article proposes a voltage-mode multifunction filter using differential voltage current controllable current conveyor transconductance amplifier (DV-CCCCTA). The features of the circuit are that: the quality factor and pole frequency can be tuned independently via the values of capacitors: the circuit description is very simple, consisting of merely 1 DV-CCCCTA, and 2 capacitors. Without any component matching conditions, the proposed circuit is very appropriate to further develop into an integrated circuit. Additionally, each function response can be selected by suitably selecting input signals with digital method. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation.

Keywords: DV-CCCCTA, Voltage-mode, Multifunction filter

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Authors: A. I. Alajtal, H. G. M. Edwards, M. A. Elbagermi

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Raman spectroscopy is currently a part of the instrumentation suite of the ESA ExoMars mission for the remote detection of life signatures in the Martian surface and subsurface. Terrestrial analogues of Martian sites have been identified and the biogeological modifications incurred as a result of extremophilic activity have been studied. Analytical instrumentation protocols for the unequivocal detection of biomarkers in suitable geological matrices are critical for future unmanned explorations, including the forthcoming ESA ExoMars mission to search for life on Mars scheduled for 2018 and Raman spectroscopy is currently a part of the Pasteur instrumentation suite of this mission. Here, Raman spectroscopy using 785nm excitation was evaluated for determining various concentrations of beta-carotene in admixture with polyaromatic hydrocarbons and usnic acid have been investigated by Raman microspectrometry to determine the lowest levels detectable in simulation of their potential identification remotely in geobiological conditions in Martian scenarios. Information from this study will be important for the development of a miniaturized Raman instrument for targetting Martian sites where the biosignatures of relict or extant life could remain in the geological record.

Keywords: Raman spectroscopy, Mars-analog, Beta-carotene, PAHs.

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

Abstract:

In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor.

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Authors: Parekhan M. Aljaff, Banaz O. Rasheed

Abstract:

The exact gain shape profile of erbium doped fiber amplifiers (EDFA`s) are depends on fiber length and Er3 ion densities. This paper optimized several of erbium doped fiber parameters to obtain high performance characteristic at pump wavelengths of λp= 980 nm and λs= 1550 nm for three different pump powers. The maximum gain obtained for pump powers (10, 30 and 50mw) is nearly (19, 30 and 33 dB) at optimizations. The required numerical aperture NA to obtain maximum gain becomes less when pump power increased. The amplifier gain is increase when Er+3doped near the center of the fiber core. The simulation has been done by using optisystem 5.0 software (CAD for Photonics, a license product of a Canadian based company) at 2.5 Gbps.

Keywords: EDFA, Erbium Doped Fiber, optimization OpticalAmplifiers.

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Authors: Prungsak Uttaphut

Abstract:

An implementation of current-mode multiphase sinusoidal oscillators is presented. Using CFTA-based lossy integrators, odd and odd/even phase systems can be realized with following advantages. The condition of oscillation and frequency of oscillation can be orthogonally tuned. The high output impedances facilitate easy driving an external load without additional current buffers. The proposed MSOs provide odd or even phase signals that are equally spaced in phase and equal amplitude. The circuit requires one CFTA, one resistor and one grounded capacitor per phase without additional current amplifier. The results of PSPICE simulations using CMOS CFTA are included to verify theory.

Keywords: multiphase sinusoidal oscillator, current-mode, CFTA, lossy integrator

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