Search results for: semiconductor industry.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1648

Search results for: semiconductor industry.

1618 Application of Molecular Materials in the Manufacture of Flexible and Organic Devices for Photovoltaic Applications

Authors: M. Gómez-Gómez, M. E. Sánchez-Vergara

Abstract:

Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.

Keywords: Electrical properties, optical gap, phthalocyanine, thin film.

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1617 Development of Manufacturing Simulation Model for Semiconductor Fabrication

Authors: Syahril Ridzuan Ab Rahim, Ibrahim Ahmad, Mohd Azizi Chik, Ahmad Zafir Md. Rejab, and U. Hashim

Abstract:

This research presents the development of simulation modeling for WIP management in semiconductor fabrication. Manufacturing simulation modeling is needed for productivity optimization analysis due to the complex process flows involved more than 35 percent re-entrance processing steps more than 15 times at same equipment. Furthermore, semiconductor fabrication required to produce high product mixed with total processing steps varies from 300 to 800 steps and cycle time between 30 to 70 days. Besides the complexity, expansive wafer cost that potentially impact the company profits margin once miss due date is another motivation to explore options to experiment any analysis using simulation modeling. In this paper, the simulation model is developed using existing commercial software platform AutoSched AP, with customized integration with Manufacturing Execution Systems (MES) and Advanced Productivity Family (APF) for data collections used to configure the model parameters and data source. Model parameters such as processing steps cycle time, equipment performance, handling time, efficiency of operator are collected through this customization. Once the parameters are validated, few customizations are made to ensure the prior model is executed. The accuracy for the simulation model is validated with the actual output per day for all equipments. The comparison analysis from result of the simulation model compared to actual for achieved 95 percent accuracy for 30 days. This model later was used to perform various what if analysis to understand impacts on cycle time and overall output. By using this simulation model, complex manufacturing environment like semiconductor fabrication (fab) now have alternative source of validation for any new requirements impact analysis.

Keywords: Advanced Productivity Family (APF), Complementary Metal Oxide Semiconductor (CMOS), Manufacturing Execution Systems (MES), Work In Progress (WIP).

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1616 Influence of Confined Acoustic Phonons on the Shubnikov – de Haas Magnetoresistance Oscillations in a Doped Semiconductor Superlattice

Authors: Pham Ngoc Thang, Le Thai Hung, Nguyen Quang Bau

Abstract:

The influence of confined acoustic phonons on the Shubnikov – de Haas magnetoresistance oscillations in a doped semiconductor superlattice (DSSL), subjected in a magnetic field, DC electric field, and a laser radiation, has been theoretically studied based on quantum kinetic equation method. The analytical expression for the magnetoresistance in a DSSL has been obtained as a function of external fields, DSSL parameters, and especially the quantum number m characterizing the effect of confined acoustic phonons. When m goes to zero, the results for bulk phonons in a DSSL could be achieved. Numerical calculations are also achieved for the GaAs:Si/GaAs:Be DSSL and compared with other studies. Results show that the Shubnikov – de Haas magnetoresistance oscillations amplitude decrease as the increasing of phonon confinement effect.

Keywords: Shubnikov–de Haas magnetoresistance oscillations, quantum kinetic equation, confined acoustic phonons, laser radiation, doped semiconductor superlattices.

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1615 The Experience with SiC MOSFET and Buck Converter Snubber Design

Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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1614 A Comparative Study of a Defective Superconductor/ Semiconductor-Dielectric Photonic Crystal

Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa2Ca2Cu3O10 as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF2 as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF2)NInSb(Si/MgF2)N named S.I, and (Si/MgF2)NHgBa2Ca2Cu3O10(Si/MgF2)N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.

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1613 The Analysis of the Software Industry in Thailand

Authors: Danuvasin Charoen

Abstract:

The software industry has been considered a critical infrastructure for any nation. Several studies have indicated that national competitiveness increasingly depends upon Information and Communication Technology (ICT), and software is one of the major components of ICT, important for both large and small enterprises. Even though there has been strong growth in the software industry in Thailand, the industry has faced many challenges and problems that need to be resolved. For example, the amount of pirated software has been rising, and Thailand still has a large gap in the digital divide. Additionally, the adoption among SMEs has been slow. This paper investigates various issues in the software industry in Thailand, using information acquired through analysis of secondary sources, observation, and focus groups. The results of this study can be used as “lessons learned" for the development of the software industry in any developing country.

Keywords: Software industry, developing nations.

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1612 Analysis of Nonlinear Pulse Propagation Characteristics in Semiconductor Optical Amplifier for Different Input Pulse Shapes

Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

Abstract:

This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: Finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier.

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1611 Industrial Effects and Firm's Survival (Case Study: Iran- East Azarbaijan Province)

Authors: Ghaffar Tari

Abstract:

The aim of this paper is to investigate the effect of mean size of industry on survival of new firms in East-Azarbaijan province through 1981-2006 using hazard function. So the effect of two variables including mean employment of industry and mean capital of industry are investigated on firm's survival. The Industry & Mine Ministry database has used for data gathering and the data are analyzed using the semi-parametric cox regression model. The results of this study shows that there is a meaningful negative relationship between mean capital of industry and firm's survival, but the mean employment of industry has no meaningful effect on survival of new firms.

Keywords: Firm's Survival, Hazard Function, Mean Capital of Industry, Mean Employment of Industry.

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1610 Application of Formyl-TIPPCu (II) for Temperature and Light Sensing

Authors: Dil Nawaz Khan, M. H. Sayyad, Muhammad Yaseen, Munawar Ali Munawar, Mukhtar Ali

Abstract:

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Keywords: formyl-TIPPCu(II), Organic semiconductor, Photocapacitance, Polarizability.

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1609 Clustering Mixed Data Using Non-normal Regression Tree for Process Monitoring

Authors: Youngji Yoo, Cheong-Sool Park, Jun Seok Kim, Young-Hak Lee, Sung-Shick Kim, Jun-Geol Baek

Abstract:

In the semiconductor manufacturing process, large amounts of data are collected from various sensors of multiple facilities. The collected data from sensors have several different characteristics due to variables such as types of products, former processes and recipes. In general, Statistical Quality Control (SQC) methods assume the normality of the data to detect out-of-control states of processes. Although the collected data have different characteristics, using the data as inputs of SQC will increase variations of data, require wide control limits, and decrease performance to detect outof- control. Therefore, it is necessary to separate similar data groups from mixed data for more accurate process control. In the paper, we propose a regression tree using split algorithm based on Pearson distribution to handle non-normal distribution in parametric method. The regression tree finds similar properties of data from different variables. The experiments using real semiconductor manufacturing process data show improved performance in fault detecting ability.

Keywords: Semiconductor, non-normal mixed process data, clustering, Statistical Quality Control (SQC), regression tree, Pearson distribution system.

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1608 An Empirical Study Comparing Industry Segments as Regards Organisation Management in Open Innovation - Based on a Questionnaire of the Pharmaceutical Industry and IT Component Industry Segment

Authors: F. Isada, Y. Isada

Abstract:

The aim of this research is to clarify the difference by industry segment or product characteristics as regards organisation management for an open innovation to raise R&D performance. In particular, the trait of the pharmaceutical industry is defined in comparison with IT component industry segment. In considering open innovation, both inter-organisational relation and the management in an organisation are important issues. As methodology, a questionnaire was conducted. In conclusion, suitable organisation management according to the difference in industry segment or product characteristics became clear.

Keywords: Empirical study, industry segment, open innovation, product-development organisation pattern.

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1607 Temperature Variation Effects on I-V Characteristics of Cu-Phthalocyanine based OFET

Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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1606 The Relationship between Value-Added and Energy Consumption in Iran’s Industry Sector

Authors: Morteza Raei Dehaghi, Mojtaba Molaahmadi, Seyed Mohammad Mirhashemi

Abstract:

This study aimed to explore the relationship between energy consumption and value-added in Iran’s industry sector during the time period 1973-2011. Annual data related to energy consumption and value added in the industry sector were used. The results of the study revealed a positive relationship between energy consumption and value-added of the industry sector. Similarly, the results showed that there is one-way causality between energy consumption and value-added in the industry sector.

Keywords: Energy consumption, economic growth, industry sector.

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1605 Towards An Integrated Model for Academia- Industry Interface in India

Authors: Vinay K. Nangia, Cashmira Pramanik

Abstract:

Academia-industry relationship is not like that of technology donator-acceptor, but is of interactive and collaborative nature, acknowledging and ensuring mutual respect for each other-s role and contributions with an eye to attaining the true purpose of such relationships, namely, bringing about research-outcome synergy. Indeed, academia-industry interactions are a system that requires active and collaborative participations of all the stakeholders. This paper examines various issues associated with academic institutions and industry collaboration with special attention to the nature of resources and potentialities of stakeholders in the context of knowledge management. This paper also explores the barriers of academia-industry interaction. It identifies potential areas where industry-s participation with academia would be most effective for synergism. Lastly, this paper proposes an integrated model of several new collaborative approaches that are possible, mainly in the Indian scenario to strengthen academia-industry interface.

Keywords: academia-industry, interface, knowledge economy, technology transfer.

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1604 Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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1603 Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te

Authors: N. Dahbi, M. Daoudi, A.Belghachi

Abstract:

The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Keywords: degeneracy case, Hg0.8Cd0.2Te semiconductor, Monte Carlo simulation, transport parameters.

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1602 A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage

Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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1601 Study of Parameters Affecting the Electrostatic Attractions Force

Authors: Vahid Sabermand, Yousef Hojjat, Majid Hasanzadeh

Abstract:

This paper contains 2 main parts. In the first part of paper we simulated and studied three types of electrode patterns used in various industries for suspension and handling of the semiconductor and glass and we selected the best pattern by evaluating the electrostatic force, which was comb pattern electrode. In the second part we investigated the parameters affecting the amount of electrostatic force such as the gap between surface and electrode (g), the electrode width (w), the gap between electrodes (t), the surface permittivity and electrode length and methods of improvement of adhesion force by changing these values.

Keywords: Electrostatic force, electrostatic adhesion, electrostatic chuck, electrostatic application in industry, Electroadhesive grippers.

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1600 FWM Wavelength Conversion Analysis in a 3-Integrated Portion SOA and DFB Laser using Coupled Wave Approach and FD-BPM Method

Authors: M. K. Moazzam, A. Salmanpour, M. Nirouei

Abstract:

In this paper we have numerically analyzed terahertzrange wavelength conversion using nondegenerate four wave mixing (NDFWM) in a SOA integrated DFB laser (experiments reported both in MIT electronics and Fujitsu research laboratories). For analyzing semiconductor optical amplifier (SOA), we use finitedifference beam propagation method (FDBPM) based on modified nonlinear SchrÖdinger equation and for distributed feedback (DFB) laser we use coupled wave approach. We investigated wavelength conversion up to 4THz probe-pump detuning with conversion efficiency -5dB in 1THz probe-pump detuning for a SOA integrated quantum-well

Keywords: distributed feedback laser, nondegenerate fourwave mixing, semiconductor optical amplifier, wavelengthconversion

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1599 Metal-Oxide-Semiconductor-Only Process Corner Monitoring Circuit

Authors: Davit Mirzoyan, Ararat Khachatryan

Abstract:

A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.

Keywords: Detection, monitoring, process corner, process variation.

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1598 Analyzing Convergence of IT and Energy Industry Based on Social System Framework

Authors: Giseob Byun, Ji Yeon Cho, Bong Gyou Lee

Abstract:

The purpose of this study is to analyze Green IT industry in major developed countries and to suggest overall directions for IT-Energy convergence industry. Recently, IT industry is pointed out as a problem such as environmental pollution, energy exhaustion, and high energy consumption. Therefore, Green IT gets focused which concerns as solution of these problems. However, since it is a beginning stage of this convergence area, there are only a few studies of IT-Energy convergence industry. According to this, this study examined the major developed countries in terms of institution arrangements, resources, markets and companies based on Van de Ven(1999)'s social system framework that shows relationship among key components of industrial infrastructure. Subsequently, the direction of the future study of convergence on IT and Energy industry is proposed.

Keywords: Green IT, Energy industry, Convergence, Social System Framework.

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1597 A Novel Single-Wavelength All-Optical Flip-Flop Employing Single SOA-MZI

Authors: H. Kaatuzian, M. Sedghi, S. Khatami

Abstract:

In this paper, by exploiting a single semiconductor optical amplifier-Mach Zehnder Interferometer (SOA-MZI), an integratable all-optical flip-flop (AOFF) is proposed. It is composed of a SOA-MZI with a bidirectional coupler at the output. Output signals of both bar and crossbar of the SOA-MZI is fed back to SOAs located in the arms of the Mach-Zehnder Interferometer (MZI). The injected photon-rates to the SOAs are modulated by feedback signals in order to form optical flip-flop. According to numerical analysis, Gaussian optical pulses with the energy of 15.2 fJ and 20 ps duration with the full width at half-maximum criterion, can switch the states of the SR-AOFF. Also simulation results show that the SR-AOFF has the contrast ratio of 8.5 dB between two states with the transition time of nearly 20 ps.

Keywords: All Optical, Flip-Flop, Mach-Zehnder Interferometer (MZI), Semiconductor Optical Amplifier (SOA).

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1596 The Motivating and Demotivating Factors at the Learning of English Center in Thailand

Authors: Bella Llego

Abstract:

This study aims to investigate the motivating and de-motivating factors that affect the learning ability of students attending the English Learning Center in Thailand. The subjects of this research were 20 students from the Hana Semiconductor Co., Limited. The data were collected by using questionnaire and analyzed using the SPSS program for the percentage, mean and standard deviation. The research results show that the main motivating factor in learning English at Hana Semiconductor Co., Ltd. is that it would help the employees to communicate with foreign customers and managers. Other reasons include the need to read and write e-mails, and reports in English, as well as to increase overall general knowledge. The main de-motivating factor is that there is a lot of vocabulary to remember when learning English. Another de-motivating factor is that when homework is given, the students have no time to complete the tasks required of them at the end of the working day.

Keywords: Motivating, demotivating, English learning center, student communicate.

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1595 The Impact Factors of the Environmental Pollution and Workers Health in Printing Industry

Authors: Kiurski J., Marić B., Djaković V., Adamović S., Oros I., Krstić J.

Abstract:

This paper presents the study of parameters affecting the environment protection in the printing industry. The paper has also compared LCA studies performed within the printing industry in order to identify common practices, limitations, areas for improvement, and opportunities for standardization. This comparison is focused on the data sources and methodologies used in the printing pollutants register. The presented concepts, methodology and results represent the contribution to the sustainable development management. Furthermore, the paper analyzes the result of the quantitative identification of hazardous substances emitted in printing industry of Novi Sad.

Keywords: LCA, parameters of pollution, printing industry, register

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1594 Structural Simulation of a 4H-Sic Based Optically Controlled Thyristor Using a GaAs Based Optically Triggered Power Transistor and Its Application to DC-DC Boost Converter

Authors: Srikanta Bose, S.K. Mazumder

Abstract:

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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1593 Proposal for a Model of Economic Integration for the Development of Industry in Cabinda, Angola

Authors: T. H. Bitebe, T. M. Lima, F. Charrua-Santos, C. J. Matias Oliveira

Abstract:

This study aims to present a proposal for an economic integration model for the development of the manufacturing industry in Cabinda, Angola. It seeks to analyze the degree of economic integration of Cabinda and the dynamics of the manufacturing industry. Therefore, in the same way, to gather information to support the decision-making for public financing programs that will aim at the disengagement of the manufacturing industry in Angola and Cabinda in particular. The Cabinda Province is the 18th of Angola, the enclave is located in a privileged area of the African and arable land.

Keywords: Economic integration, industrial development, Cabinda industry, Angola.

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1592 ANP-based Intra and Inter-industry Analysis for Measuring Spillover Effect of ICT Industries

Authors: Yongyoon Suh, Yongtae Park

Abstract:

The interaction among information and communication technology (ICT) industries is a recently ubiquitous phenomenon through fixed-mobile integration. To monitor the impact of interaction, previous research has mainly focused on measuring spillover effect among ICT industries using various methods. Among others, inter-industry analysis is one of the useful methods for examining spillover effect between industries. However, more complex ICT industries become, more important the impact within an industry is. Inter-industry analysis is limited in mirroring intra-relationships within an industry. Thus, this study applies the analytic network process (ANP) to measure the spillover effect, capturing all of the intra and inter-relationships. Using ANP-based intra and inter-industry analysis, the spillover effect is effectively measured, mirroring the complex structure of ICT industries. A main ICT industry and its linkages are also explored to show the current structure of ICT industries. The proposed approach is expected to allow policy makers to understand interactions of ICT industries and their impact.

Keywords: ANP, intra and inter-industry analysis, spillover effect

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1591 Corporate Social Responsibility in China Apparel Industry

Authors: Zhao Linfei, Gu Qingliang

Abstract:

China apparel industry, which is deeply embedded in the global production network (GPN), faces the dual pressures of social upgrading and economic upgrading. Based on the survey in Ningbo apparel cluster, the paper shows the state of corporate social responsibility (CSR) in China apparel industry is better than before. And the investigation indicates that the firms who practice CSR actively perform better both socially and economically than those who inactively. The research demonstrates that CSR can be an initial capital rather than cost, and “doing well by doing good" is also existed in labor intensive industry.

Keywords: Global production network, corporate social responsibility, China apparel industry.

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1590 Simulation of High Performance Nanoscale Partially Depleted SOI n-MOSFET Transistors

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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1589 Software Obsolescence Drivers in Aerospace: An Industry Analysis

Authors: Raúl González Muñoz, Essam Shehab, Martin Weinitzke, Chris Fowler, Paul Baguley

Abstract:

Software applications have become crucial for the aerospace industry, providing a wide range of functionalities and capabilities. However, due to the considerable time difference between aircraft and software life cycles, obsolescence has turned into a major challenge for industry in last decades. This paper aims to provide a view on the different causes of software obsolescence within aerospace industry, as well as a perception on the importance of each of them. The key research question addressed is what drives software obsolescence in the aerospace industry, managing large software application portfolios. This question has been addressed by conducting firstly an in depth review of current literature and secondly by arranging an industry workshop with professionals from aerospace and consulting companies. The result is a set of drivers of software obsolescence, distributed among three different environments and several domains. By incorporating monitoring methodologies to assess those software obsolescence drivers, benefits in maintenance efforts and operations disruption avoidance are expected.

Keywords: Aerospace industry, obsolescence drivers, software lifecycle, software obsolescence.

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