Search results for: wide band gap semiconductor.

Authors: Z. Briqech, M. Abousetta

Abstract:

Luneberg lens is a new generation of antennas that is developed in the last few years and inserts itself strongly in Microwaves, Communications and Telescopes area. The idea of this research is to improve the radiation pattern by decreasing the side lobes and increasing the main lobe. The new design is proposed to work in the X-band. The simulated result and analysis are presented.

Keywords: Communications, Microwaves, lens Antenna, Lunberg Lens Antenna.

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Authors: Hema Nair

Abstract:

This paper presents a new system developed in Java® for pattern recognition and pattern summarisation in multi-band (RGB) satellite images. The system design is described in some detail. Results of testing the system to analyse and summarise patterns in SPOT MS images and LANDSAT images are also discussed.

Keywords: Pattern recognition, image analysis, feature extraction, blackboard component, linguistic summary.

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Authors: K. B. Dermenci, B. Ebin, S.Gürmen

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Noble metal participation in nanostructured semiconductor catalysts has drawn much interest because of their improved properties. Recently, it has been discussed by many researchers that Ag participation in TiO2, CuO, ZnO semiconductors showed improved photocatalytic and optical properties. In this research, Ag/ZnO nanocomposite particles were prepared by Ultrasonic Spray Pyrolysis(USP) Method. 0.1M silver and zinc nitrate aqueous solutions were used as precursor solutions. The Ag:Zn atomic ratio of the solution was selected 1:1. Experiments were taken place under constant air flow of 400 mL/min at 800°C furnace temperature. Particles were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Spectroscopy (EDS). The crystallite sizes of Ag and ZnO in composite particles are 24.6 nm, 19.7 nm respectively. Although, spherical nanocomposite particles are in a range of 300- 800 nm, these particles are formed by the aggregation of primary particles which are in a range of 20-60 nm.

Keywords: Ag/ZnO nanocatalysts, Nanotechnology, USP

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Authors: Qasem A. Al-Radaideh, Emad Abu-Shanab, Shaima Hamam, Hani Abu-Salem

Abstract:

Online news websites are one of the main and wide areas of Mass Media. Since the nineties several Jordanian newspapers were introduced to the World Wide Web to reach various and large numbers of audiances. Examples of these newspapers that have online version are Al-Rai, Ad-Dustor and AlGhad. Other pure online news websites include Ammon and Rum. The main aim of this study is to evaluate online newspaper websites using two assessment measures; usability and web content. This aim is achieved by using a questionnaire based evaluation which is based on the definition of usability and web content in the ISO document as the standard number 9241-part 11. The results are obtained based on 204 audiences- responses. The results of the research showed that the usability factor is relatively good for all Jordanian online newspapers whereas the web content factor is moderate.

Keywords: Communication and mass media, Jordanian online news websites, website content, website usability.

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Authors: Jae-Hong Kwon, Myung-Ho Chung, Tae-Yeon Oh, Hyeon-Seok Bae, Byeong-Kwon Ju

Abstract:

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

Keywords: Organic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

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Authors: Maziar Noei

Abstract:

Adsorption of a boron nitride nanotube (BNNT) was examined toward ethylacetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethylacetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si and Al atoms, the adsorption energy of ethylacetylene molecule was increased. Calculation showed that when the nanotube is doping by Al, the adsorption energy is about - 24.19kcal/mol and also the amount of HOMO/LUMO energy gap (Eg) will reduce significantly. Boron nitride nanotube is a suitable adsorbent for ethylacetylene and can be used in separation processes ethylacetylene. It is seem that nanotube (BNNT) is a suitable semiconductor after doping, and the doped BNNT in the presence of ethylacetylene an electrical signal is generating directly and therefore can potentially be used for ethylacetylene sensors.

Keywords: Sensor, Nanotube, DFT, Ethylacetylene.

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

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Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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Authors: Vasundara Patel K. S., Harsha N. Bhushan, Kiran G. Gadag, Nischal Prasad B. N., Mohmmed Haroon

Abstract:

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Keywords: Schmitt trigger based SRAM, FinFET, and Static Noise Margin.

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Authors: Muhammad Tahir Qadri, M. Irfan Anis, M. Nawaz Irshad Khan

Abstract:

This paper discusses the approach of real-time controlling of the energy management system using the data acquisition tool of LabVIEW. The main idea of this inspiration was to interface the Station (PC) with the system and publish the data on internet using LabVIEW. In this venture, controlling and switching of 3 phase AC loads are effectively and efficiently done. The phases are also sensed through devices. In case of any failure the attached generator starts functioning automatically. The computer sends command to the system and system respond to the request. The modern feature is to access and control the system world-wide using world wide web (internet). This controlling can be done at any time from anywhere to effectively use the energy especially in developing countries where energy management is a big problem. In this system totally integrated devices are used to operate via remote location.

Keywords: VI-server, Remote Access, Telemetry, Data Acquisition, web server.

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Authors: Akbar Cahyadhi Pratama Putra, Tantri Utami Widhaningtyas, M. Randy Aswin

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Indonesia, as an archipelagic nation, has a very long coastline with significant potential for marine resources, including mangrove ecosystems. The Lapindo mudflow disaster in Sidoarjo, East Java, resulted in mudflow being discharged into the sea through the Brantas and Porong rivers. The mud material transported by the river flow is feared to be dangerous because it contains harmful substances such as heavy metals. This study aims to map the mangrove ecosystem in terms of its density and assess the impact of the Lapindo mud disaster on the mangrove ecosystem, along with efforts to sustain its continuity. The mapping of the coastal mangrove conditions in Sidoarjo was carried out using remote sensing products, specifically Landsat 7 ETM+ images, taken during dry months in 2002, 2006, 2009, and 2014. The density of mangroves was determined using NDVI, which utilizes band 3 (the red channel) and band 4 (the near IR channel). Image processing to generate NDVI was performed using ENVI 5.1 software. The NDVI results were used to assess mangrove density on a scale from 0 to 1. The growth of mangrove ecosystems, both in terms of area and density, showed a significant increase from year to year. The development of mangrove ecosystems was influenced by the deposition of Lapindo mud in the estuaries of the Porong and Brantas rivers, where the silt provided a suitable medium for the growth of the mangrove ecosystem, leading to an increase in its density. The rise in density was supported by public awareness to mitigate heavy metal contamination, allowing for mangrove breeding near the affected areas.

Keywords: Archipelagic nation, Mangrove, Lapindo mudflow disaster, NDVI.

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Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

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We evaluate the average energy consumption per bit in Optical Packet Switches equipped with BENES switching fabric realized in Semiconductor Optical Amplifier (SOA) technology. We also study the impact that the Amplifier Spontaneous Emission (ASE) noise generated by a transmission system has on the power consumption of the BENES switches due to the gain saturation of the SOAs used to realize the switching fabric. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 2, 34 · 10-1 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Benes, Amplifier Spontaneous Emission Noise, EnergyConsumption, Optical Packet Switch.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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Authors: Ladda Leungratanamart, Seree Chadcham

Abstract:

Fluid intelligence declines along with age, but it can be developed. For this reason, increasing fluid intelligence in young adults can be possible. This study examined the effects of a two-month treadmill exercise program on fluid intelligence. The researcher designed a treadmill exercise program to promote cardiorespiratory fitness. Thirty-eight healthy voluntary students from the Boromarajonani College of Nursing, Chon Buri were assigned randomly to an exercise group (n=18) and a control group (n=20). The experiment consisted of three sessions: The baseline session consisted of measuring the VO₂max, electroencephalogram and behavioral response during performed the Raven Progressive Matrices (RPM) test, a measure of fluid intelligence. For the exercise session, an experimental group exercises using treadmill training at 60 % to 80 % maximum heart rate for 30 mins, three times per week, whereas the control group did not exercise. For the following two sessions, each participant was measured the same as baseline testing. The data were analyzed using the t-test to examine whether there is significant difference between the means of the two groups. The results showed that the mean VO₂ max in the experimental group were significantly more than the control group (p<.05), suggesting a two-month treadmill exercise program can improve fluid intelligence. When comparing the behavioral data, it was found that experimental group performed RPM test more accurately and faster than the control group. Neuroelectric data indicated a significant increase in percentages of alpha band ERD (%ERD) at P3 and Pz compared to the pre-exercise condition and the control group. These data suggest that a two-month treadmill exercise program can contribute to the development of cardiorespiratory fitness which influences an increase fluid intelligence. Exercise involved in cortical activation in difference brain areas.

Keywords: Treadmill exercise, fluid intelligence, raven progressive matrices test, %ERD of upper Alpha band.

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Authors: Omar A. Saraereh, M. A. Smadi, A. K. S. Al-Bayati, Jasim A. Ghaeb, Qais H. Alsafasfeh

Abstract:

A low profile planar antenna for twelve-band operation in the mobile phone is presented. The proposed antenna radiating elements occupy an area equals 17 × 50 mm² are mounted on the compact no-ground portion of the system circuit board to achieve a simple low profile structure. In order to overcome the shortcoming of narrow bandwidth for conventional planar printed antenna, a novel bandwidth enhancement approach for multiband handset antennas is proposed here. The technique used in this study shows that by using a coupled-fed mechanism and a slotted ground structure, a multiband operation with wideband characteristic can be achieved. The influences of the modifications introduced into the ground plane improved significantly the bandwidths of the designed antenna. The slotted ground plane structure with the coupled-fed elements contributes their lowest, middle and higher-order resonant modes to form four operating modes. The generated modes are able to cover LTE 700/2300/2500, GSM 850/900/1800/1900, UMTS, WiMAX 3500, WLAN 2400/5200/5800 operations. Parametric studies via simulation are provided and discussed. Proposed antenna’s gain, efficiency and radiation pattern characteristics over the desired operating bands are obtained and discussed. The reasonable results observed can meet the requirements of practical mobile phones.

Keywords: Antenna, handset, LTE, Mobile, Multiband, Slotted ground, specific absorption rate (SAR).

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Authors: Khalil Monfaredi, Hassan Faraji Baghtash, Majid Abbasi

Abstract:

In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.

Keywords: Analog circuits, Current mirror, high frequency, Low power, Low voltage.

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Authors: Zeyad Abdelmageid, Xianbin Wang

Abstract:

Choosing the operational channel for a WLAN access point (AP) in WLAN networks has been a static channel assignment process initiated by the user during the deployment process of the AP, which fails to cope with the dynamic conditions of the assigned channel at the station side afterwards. However, the dramatically growing number of Wi-Fi APs and stations operating in the unlicensed band has led to dynamic, distributed and often severe interference. This highlights the urgent need for the AP to dynamically select the best overall channel of operation for the basic service set (BSS) by considering the distributed and changing channel conditions at all stations. Consequently, dynamic channel selection algorithms which consider feedback from the station side have been developed. Despite the significant performance improvement, existing channel selection algorithms suffer from very high feedback overhead. Feedback latency from the STAs, due the high overhead, can cause the eventually selected channel to no longer be optimal for operation due to the dynamic sharing nature of the unlicensed band. This has inspired us to develop our own dynamic channel selection algorithm with reduced overhead through the proposed low-overhead, cluster-based station reporting mechanism. The main idea behind the cluster-based station reporting is the observation that STAs which are very close to each other tend to have very similar channel conditions. Instead of requesting each STA to report on every candidate channel while causing high overhead, the AP divides STAs into clusters then assigns each STA in each cluster one channel to report feedback on. With proper design of the cluster based reporting, the AP does not lose any information about the channel conditions at the station side while reducing feedback overhead. The simulation results show equal performance and at times better performance with a fraction of the overhead. We believe that this algorithm has great potential in designing future dynamic channel selection algorithms with low overhead.

Keywords: Channel assignment, Wi-Fi networks, clustering, DBSCAN, overhead.

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Authors: Ali Dulla

Abstract:

This paper introduces a new dataset (and the methodology used to generate it) based on a wide range of historical Arabic documents containing clean data simple and homogeneous-page layouts. The experiments are implemented on printed and handwritten documents obtained respectively from some important libraries such as Qatar Digital Library, the British Library and the Library of Congress. We have gathered and commented on 150 archival document images from different locations and time periods. It is based on different documents from the 17th-19th century. The dataset comprises differing page layouts and degradations that challenge text line segmentation methods. Ground truth is produced using the Aletheia tool by PRImA and stored in an XML representation, in the PAGE (Page Analysis and Ground truth Elements) format. The dataset presented will be easily available to researchers world-wide for research into the obstacles facing various historical Arabic documents such as geometric correction of historical Arabic documents.

Keywords: Dataset production, ground truth production, historical documents, arbitrary warping, geometric correction.

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Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

Abstract:

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: Ag–doped ZnO nanorods, Hydrothermal process, p–n homo–junction diode, p–type ZnO.

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Authors: S. Sarumathi, M. Vaishnavi, S. Geetha, P. Ranjetha

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Machine learning is a new and exciting area of artificial intelligence nowadays. Machine learning is the most valuable, time, supervised, and cost-effective approach. It is not a narrow learning approach; it also includes a wide range of methods and techniques that can be applied to a wide range of complex realworld problems and time domains. Biological image classification, adaptive testing, computer vision, natural language processing, object detection, cancer detection, face recognition, handwriting recognition, speech recognition, and many other applications of machine learning are widely used in research, industry, and government. Every day, more data are generated, and conventional machine learning techniques are becoming obsolete as users move to distributed and real-time operations. By providing fundamental knowledge of machine learning tools and research opportunities in the field, the aim of this article is to serve as both a comprehensive overview and a guide. A diverse set of machine learning resources is demonstrated and contrasted with the key features in this survey.

Keywords: Artificial intelligence, machine learning, deep learning, machine learning algorithms, machine learning tools.

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Authors: Hanane Ondella, Pierre Ladet, David Ferrand, Pat Sloan

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In the micro and nano-technology industry, the «clean-rooms» dedicated to manufacturing chip, are equipped with the most sophisticated equipment-tools. There use a large number of resources in according to strict specifications for an optimum working and result. The distribution of «utilities» to the production is assured by teams who use a supervision tool. The studies show the interest to control the various parameters of production or/and distribution, in real time, through a reliable and effective supervision tool. This document looks at a large part of the functions that the supervisor must assure, with complementary functionalities to help the diagnosis and simulation that prove very useful in our case where the supervised installations are complexed and in constant evolution.

Keywords: Control-Command, evolution, non regression, performances, real time, simulation, supervision.

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Authors: Yin-Yann Chen, Tzu-Ling Chen

Abstract:

This study presents the case of an actual Taiwanese semiconductor assembly and testing manufacturer. Three major bottleneck manufacturing processes, namely, die bond, wire bond, and molding, are analyzed to determine how to use finite resources to achieve the optimal capacity allocation. A medium-term capacity allocation planning model is developed by considering the optimal total profit to satisfy the promised volume demanded by customers and to obtain the best migration decision among production lines for machines and tools. Finally, sensitivity analysis based on the actual case is provided to explore the effect of various parameter levels.

Keywords: Capacity planning, capacity allocation, machine migration, resource configuration.

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Authors: Kureshi Abdul Kadir, Mohd. Hasan

Abstract:

Each new semiconductor technology node brings smaller transistors and wires. Although this makes transistors faster, wires get slower. In nano-scale regime, the standard copper (Cu) interconnect will become a major hurdle for FPGA interconnect due to their high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as energy efficient and high speed interconnect for future FPGA routing architecture. All HSPICE simulations are carried out at operating frequency of 1GHz and it is found that mixed CNT bundle implemented in FPGAs as interconnect can potentially provide a substantial delay and energy reduction over traditional interconnects at 32nm process technology.

Keywords: CMOS, Copper Interconnect, Mixed CNT Bundle Interconnect, FPGAs.

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Authors: V. V. Lyahov, V. M. Neshchadim

Abstract:

We offer a new technique for research of stability of current sheaths in space plasma taking into account the effect of polarization. At the beginning, the found perturbation of the distribution function is used for calculation of the dielectric permeability tensor, which simulates inhomogeneous medium of a current sheath. Further, we in the usual manner solve the system of Maxwell's equations closed with the material equation. The amplitudes of Fourier perturbations are considered to be exponentially decaying through the current sheath thickness. The dispersion equation follows from the nontrivial solution requirement for perturbations of the electromagnetic field. The resulting dispersion equation allows one to study the temporal and spatial characteristics of instability modes of the current sheath (within the limits of the proposed model) over a wide frequency range, including low frequencies.

Keywords: Current sheath, distribution function, effect of polarization, instability modes, low frequencies, perturbation of electromagnetic field dispersion equation, space plasma, tensor of dielectric permeability.

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Authors: Kyoung Kun Lee, Soongyu Kwon, Jong Tae Kim

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An embedded system for SEU(single event upset) test needs to be designed to prevent system failure by high-energy particles during measuring SEU. SEU is a phenomenon in which the data is changed temporary in semiconductor device caused by high-energy particles. In this paper, we present an embedded system for SRAM(static random access memory) SEU test. SRAMs are on the DUT(device under test) and it is separated from control board which manages the DUT and measures the occurrence of SEU. It needs to have considerations for preventing system failure while managing the DUT and making an accurate measurement of SEUs. We measure the occurrence of SEUs from five different SRAMs at three different cyclotron beam energies 30, 35, and 40MeV. The number of SEUs of SRAMs ranges from 3.75 to 261.00 in average.

Keywords: embedded system, single event upset, SRAM

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Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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Authors: Petra Horváthová, Andrej Miklosik

Abstract:

One part of the total employee’s reward is apart from basic wages or salary, employee’s benefits and intangible remuneration also so called contingent (variable) pay. Contingent pay is connected to performance, contribution, cap competency or skills of individual employees, and to team’s or company-wide performance or to combination of few of the mentioned possibilities. Sometimes among the contingent pay is also incorporated the remuneration based on length of employment, when the financial reward is not connected to performance or skills, but to length of continuous employment either on one working position or in one level of remuneration scale. Main aim of this article is to define, based on available information, contingent pay, describe individual forms, its advantages and disadvantages and possibilities to utilization in practice; but also bring information not only about its extent and level of utilization of contingent pay by companies in one of the Czech Republic’s regions, but also mention their practical experience with this type of remuneration.

Keywords: Contingent pay, individual contingent pay, team contingent pay, company-wide contingent pay

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Authors: Víctor D. Rodríguez, Edith P. Estupiñán, Juan C. Martínez

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The evolution in mobile broadband technologies has allowed to increase the download rates in users considering the current services. The evaluation of technical parameters at the link level is of vital importance to validate the quality and veracity of the connection, thus avoiding large losses of data, time and productivity. Some of these failures may occur between the eNodeB (Evolved Node B) and the user equipment (UE), so the link between the end device and the base station can be observed. LTE (Long Term Evolution) is considered one of the IP-oriented mobile broadband technologies that work stably for data and VoIP (Voice Over IP) for those devices that have that feature. This research presents a technical analysis of the connection and channeling processes between UE and eNodeB with the TAC (Tracking Area Code) variables, and analysis of performance variables (Throughput, Signal to Interference and Noise Ratio (SINR)). Three measurement scenarios were proposed in the city of Bogotá using QualiPoc, where two operators were evaluated (Operator 1 and Operator 2). Once the data were obtained, an analysis of the variables was performed determining that the data obtained in transmission modes vary depending on the parameters BLER (Block Error Rate), performance and SNR (Signal-to-Noise Ratio). In the case of both operators, differences in transmission modes are detected and this is reflected in the quality of the signal. In addition, due to the fact that both operators work in different frequencies, it can be seen that Operator 1, despite having spectrum in Band 7 (2600 MHz), together with Operator 2, is reassigning to another frequency, a lower band, which is AWS (1700 MHz), but the difference in signal quality with respect to the establishment with data by the provider Operator 2 and the difference found in the transmission modes determined by the eNodeB in Operator 1 is remarkable.

Keywords: BLER, LTE, Network, Qualipoc, SNR.

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Authors: Jatinder Kumar, Vinod Kumar

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Ultrasonic machining (USM) is a non-traditional machining process being widely used for commercial machining of brittle and fragile materials such as glass, ceramics and semiconductor materials. However, USM could be a viable alternative for machining a tough material such as titanium; and this aspect needs to be explored through experimental research. This investigation is focused on exploring the use of ultrasonic machining for commercial machining of pure titanium (ASTM Grade-I) and evaluation of tool wear rate (TWR) under controlled experimental conditions. The optimal settings of parameters are determined through experiments planned, conducted and analyzed using Taguchi method. In all, the paper focuses on parametric optimization of ultrasonic machining of pure titanium metal with TWR as response, and validation of the optimized value of TWR by conducting confirmatory experiments.

Keywords: Ultrasonic machining, titanium, tool wear rate

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

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We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

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A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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