Search results for: heterojunction semiconductor devices

Authors: Morteza Amirabadi, Vahid Fayaz , Fereshteh Felegary, Hossien Hossienkhani

Abstract:

The most suitable Semiconductor detector, Cadmium Zinc Teloraid , has unique properties because of high Atomic number and wide Brand Gap . It has been tried in this project with different processes such as Lead , Diffusion , Produce and Recombination , effect of Trapping and injection carrier of CdZnTe , to get hole and then present a complete answer of it . Then we should investigate the movement of carrier ( Electron – Hole ) by using above answer.

Keywords: Semiconcuctor detector, Trapping, Recommbination, Diffusion

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Authors: V. Weinzettl, M. Imrisek, J. Havlicek, J. Mlynar, D. Naydenkova, P. Hacek, M. Hron, F. Janky, D. Sarychev, M. Berta, A. Bencze, T. Szabolics

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Semiconductor detector arrays are widely used in high-temperature plasma diagnostics. They have a fast response, which allows observation of many processes and instabilities in tokamaks. In this paper, there are reviewed several diagnostics based on semiconductor arrays as cameras, AXUV photodiodes (referred often as fast “bolometers") and detectors of both soft X-rays and visible light installed on the COMPASS tokamak recently. Fresh results from both spring and summer campaigns in 2012 are introduced. Examples of the utilization of the detectors are shown on the plasma shape determination, fast calculation of the radiation center, two-dimensional plasma radiation tomography in different spectral ranges, observation of impurity inflow, and also on investigation of MHD activity in the COMPASS tokamak discharges.

Keywords: Bolometry, plasma diagnostics, soft X-rays, tokamak.

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Authors: Daniela I. Borissova, Ivan C. Mustakerov

Abstract:

The paper describes an approach for defining of k-best night vision devices based on multi-criteria mixed-integer optimization modeling. The parameters of night vision devices are considered as criteria that have to be optimized. Using different user preferences for the relative importance between parameters different choice of k-best devices can be defined. An ideal device with all of its parameters at their optimum is used to determine how far the particular device from the ideal one is. A procedure for evaluation of deviation between ideal solution and k-best solutions is presented. The applicability of the proposed approach is numerically illustrated using real night vision devices data. The proposed approach contributes to quality of decisions about choice of night vision devices by making the decision making process more certain, rational and efficient. 

Keywords: K-best devices, mixed-integer model, multi-criteria problem, night vision devices.

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Authors: Kadam Bhambri, Neena Gupta

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All optical wavelength conversion is essential in present day optical networks for transparent interoperability, contention resolution, and wavelength routing. The incorporation of all optical wavelength convertors leads to better utilization of the network resources and hence improves the efficiency of optical networks. Wavelength convertors that can work with Dispersion Managed (DM) solitons are attractive due to their superior transmission capabilities. In this paper, wavelength conversion for dispersion managed soliton signals was demonstrated at 100 Gbps through semiconductor optical amplifier and an optical filter. The wavelength conversion was achieved for a 1550 nm input signal to1555nm output signal. The output signal was measured in terms of BER, Q factor and system margin.    

Keywords: All optical wavelength conversion, dispersion managed solitons, semiconductor optical amplifier, cross gain modulation.

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Authors: Raed A. Amro

Abstract:

Standard packaging and interconnection technologies of power devices have difficulties meeting the increasing thermal demands of new application fields of power electronics devices. Main restrictions are the decreasing reliability of bond-wires and solder layers with increasing junction temperature. In the last few years intensive efforts have been invested in developing new packaging and interconnection solutions which may open a path to future application of power devices. In this paper, the main failure mechanisms of power devices are described and principle of new packaging and interconnection concepts and their power cycling reliability are presented.

Keywords: Power electronics devices, Reliability, Power Cycling, Low-temperature joining technique (LTJT)

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Authors: Andrea Dal Monte, Marco Raciti Castelli, Ernesto Benini

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The present paper deals with the most adopted technical solutions for the enhancement of the lift force of a wing. In fact, during several flight conditions (such as take off and landing), the lift force needs to be dramatically enhanced. Both trailing edge devices (such as flaps) and leading edge ones (such as slats) are described. Finally, the most advanced aerodynamic solutions to avoid the separation of the boundary layer from aircraft wings at high angles of attack are reviewed.

Keywords: High lift devices, Trailing Edge devices, Leading Edge devices, Boundary Layer Control devices

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Authors: Matthias Kirmse, Uwe Petersohn, Elief Paffrath

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As in today's semiconductor industries test costs can make up to 50 percent of the total production costs, an efficient test error detection becomes more and more important. In this paper, we present a new machine learning approach to test error detection that should provide a faster recognition of test system faults as well as an improved test error recall. The key idea is to learn a classifier ensemble, detecting typical test error patterns in wafer test results immediately after finishing these tests. Since test error detection has not yet been discussed in the machine learning community, we define central problem-relevant terms and provide an analysis of important domain properties. Finally, we present comparative studies reflecting the failure detection performance of three individual classifiers and three ensemble methods based upon them. As base classifiers we chose a decision tree learner, a support vector machine and a Bayesian network, while the compared ensemble methods were simple and weighted majority vote as well as stacking. For the evaluation, we used cross validation and a specially designed practical simulation. By implementing our approach in a semiconductor test department for the observation of two products, we proofed its practical applicability.

Keywords: Ensemble methods, fault detection, machine learning, semiconductor test.

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Authors: Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

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The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Keywords: iron silicide, semiconductor, epitaxial, photoluminescence.

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Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multicasting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multicasting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multicasting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: Cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier.

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Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

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In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: Active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition.

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Authors: Ahmad Alshammari, Abdulaziz Bagabas

Abstract:

Rhodamine B (RB) is a toxic dye used extensively in textile industry, which must be remediated before its drainage to environment. In the present study, supported gold nanoparticles on commercially available titania and zincite were successfully prepared and then their activity on the photodegradation of RB under UV A light irradiation were evaluated. The synthesized photocatalysts were characterized by ICP, BET, XRD, and TEM. Kinetic results showed that Au/TiO2 was an inferior photocatalyst to Au/ZnO. This observation could be attributed to the strong reflection of UV irradiation by gold nanoparticles over TiO2 support.

Keywords: Supported AuNPs, Semiconductor photocatalyst, Photodegradation, Rhodamine B.

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Authors: S.K. Mazloomi, Nasri b. Sulaiman

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By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.

Keywords: Power switch, PWM, Semiconductor switch, Waterelectrolysis

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Authors: Moustafa Ahmed, Ahmed Bakry, Fumio Koyama

Abstract:

We report on the use of strong external optical feedback to enhance the modulation response of semiconductor lasers over a frequency passband around modulation frequencies higher than 60 GHz. We show that this modulation enhancement is a type of photon-photon resonance (PPR) of oscillating modes in the external cavity formed between the laser and the external reflector. The study is based on a time-delay rate equation model that takes into account both the strong feedback and multiple reflections in the external cavity. We examine the harmonic and intermodulation distortions associated with single and two-tone modulations in the mm-wave band of the resonant modulation. We show that compared with solitary lasers modulated around the carrier-photon resonance frequency, the present mm-wave modulated signal has lower distortions.

Keywords: Distortion, intensity modulation, optical feedback, semiconductor laser.

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Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: Debye length, Depletion width, flat band capacitance, impurity concentration.

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Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour

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A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.

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Authors: J. S. Kim

Abstract:

This paper presents a 0.13-µm Complementary Metal-Oxide Semiconductor (CMOS) vector modulator for beamforming system. The vector modulator features a 360° phase and gain range of -10 dB to 10 dB with a root mean square phase and amplitude error of only 2.2° and 0.45 dB, respectively. These features make it a suitable for wireless backhaul system in the 5 GHz industrial, scientific, and medical (ISM) bands. It draws a current of 20.4 mA from a 1.2 V supply. The total chip size is 1.87x1.34 mm².

Keywords: CMOS, vector modulator, beamforming, wireless backhaul, ISM.

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Authors: K. Balamurugan, V. Dharmalingam, R. Muralisachithanandam, R. Sankaran

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This paper deals with the optimal choice and location of FACTS devices in deregulated power systems using Differential Evolution algorithm. The main objective of this paper is to achieve the power system economic generation allocation and dispatch in deregulated electricity market. Using the proposed method, the locations of the FACTS devices, their types and ratings are optimized simultaneously. Different kinds of FACTS devices such as TCSC and SVC are simulated in this study. Furthermore, their investment costs are also considered. Simulation results validate the capability of this new approach in minimizing the overall system cost function, which includes the investment costs of the FACTS devices and the bid offers of the market participants. The proposed algorithm is an effective and practical method for the choice and location of suitable FACTS devices in deregulated electricity market.

Keywords: FACTS Devices, Deregulated Electricity Market, Optimal Location, Differential Evolution, Mat Lab.

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Authors: Alaa Alwani, Hassan Artail, Haidar Safa, Ayman Abi Abdallah, Bashir Basha, Tarek Abdel Khalek

Abstract:

The noticeable advance in the area of computer technology has paved the way for the invention of powerful mobile devices. However, limited storage, short battery life, and relatively low computational power define the major problems of such devices. Due to the ever increasing computational requirements, such devices may fail to process needed tasks under certain constraints. One of the proposed solutions to this drawback is the introduction of Collaborative Computing, a new concept dealing with the distribution of computational tasks amongst several handhelds. This paper introduces the basics of Collaborative Computing, and proposes a new protocol that aims at managing and optimizing computing tasks in Ad-Hoc Collaborative Computing Environments.

Keywords: Handheld devices, Collaborative Computing, mainprocess, Collaboration Table.

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Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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Authors: Syahril Ridzuan Ab Rahim, Ibrahim Ahmad, Mohd Azizi Chik, Ahmad Zafir Md. Rejab, and U. Hashim

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This research presents the development of simulation modeling for WIP management in semiconductor fabrication. Manufacturing simulation modeling is needed for productivity optimization analysis due to the complex process flows involved more than 35 percent re-entrance processing steps more than 15 times at same equipment. Furthermore, semiconductor fabrication required to produce high product mixed with total processing steps varies from 300 to 800 steps and cycle time between 30 to 70 days. Besides the complexity, expansive wafer cost that potentially impact the company profits margin once miss due date is another motivation to explore options to experiment any analysis using simulation modeling. In this paper, the simulation model is developed using existing commercial software platform AutoSched AP, with customized integration with Manufacturing Execution Systems (MES) and Advanced Productivity Family (APF) for data collections used to configure the model parameters and data source. Model parameters such as processing steps cycle time, equipment performance, handling time, efficiency of operator are collected through this customization. Once the parameters are validated, few customizations are made to ensure the prior model is executed. The accuracy for the simulation model is validated with the actual output per day for all equipments. The comparison analysis from result of the simulation model compared to actual for achieved 95 percent accuracy for 30 days. This model later was used to perform various what if analysis to understand impacts on cycle time and overall output. By using this simulation model, complex manufacturing environment like semiconductor fabrication (fab) now have alternative source of validation for any new requirements impact analysis.

Keywords: Advanced Productivity Family (APF), Complementary Metal Oxide Semiconductor (CMOS), Manufacturing Execution Systems (MES), Work In Progress (WIP).

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Authors: Pham Ngoc Thang, Le Thai Hung, Nguyen Quang Bau

Abstract:

The influence of confined acoustic phonons on the Shubnikov – de Haas magnetoresistance oscillations in a doped semiconductor superlattice (DSSL), subjected in a magnetic field, DC electric field, and a laser radiation, has been theoretically studied based on quantum kinetic equation method. The analytical expression for the magnetoresistance in a DSSL has been obtained as a function of external fields, DSSL parameters, and especially the quantum number m characterizing the effect of confined acoustic phonons. When m goes to zero, the results for bulk phonons in a DSSL could be achieved. Numerical calculations are also achieved for the GaAs:Si/GaAs:Be DSSL and compared with other studies. Results show that the Shubnikov – de Haas magnetoresistance oscillations amplitude decrease as the increasing of phonon confinement effect.

Keywords: Shubnikov–de Haas magnetoresistance oscillations, quantum kinetic equation, confined acoustic phonons, laser radiation, doped semiconductor superlattices.

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Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa₂Ca₂Cu₃O₁₀ as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF₂ as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF₂)^NInSb(Si/MgF₂)^N named S.I, and (Si/MgF₂)^NHgBa₂Ca₂Cu₃O₁₀(Si/MgF₂)^N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.

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Authors: K. Balamurugan, R. Muralisachithanandam, V. Dharmalingam, R. Srikanth

Abstract:

This paper deals with the optimal choice and allocation of multi FACTS devices in Deregulated power system using Evolutionary Programming method. The objective is to achieve the power system economic generation allocation and dispatch in deregulated electricity market. Using the proposed method, the locations of the FACTS devices, their types and ratings are optimized simultaneously. Different kinds of FACTS devices are simulated in this study such as UPFC, TCSC, TCPST, and SVC. Simulation results validate the capability of this new approach in minimizing the overall system cost function, which includes the investment costs of the FACTS devices and the bid offers of the market participants. The proposed algorithm is an effective and practical method for the choice and allocation of FACTS devices in deregulated electricity market environment. The standard data of IEEE 14 Bus systems has been taken into account and simulated with aid of MAT-lab software and results were obtained.

Keywords: FACTS devices, Optimal allocation, Deregulated electricity market, Evolutionary programming, Mat Lab.

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Authors: A.A.Andaleeb, Rozhan.M.Idrus, Issham Ismail, A.K. Mokaram

Abstract:

This paper reports the findings of a research conducted to evaluate the ownership and usage of technology devices within Distance Education students- according to their age. This research involved 45 Distance Education students from USM Universiti Sains Malaysia (DEUSM) as its respondents. Data was collected through questionnaire that had been developed by the researchers based on some literature review. The data was analyzed to find out the frequencies of respondents agreements towards ownership of technology devices and the use of technology devices. The findings shows that all respondents own mobile phone and majority of them reveal that they use mobile on regular basis. The student in the age 30-39 has the heist ownership of the technology devices.

Keywords: technology devices, mobile phone, distance learners, techno readiness Index, Age

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Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

Abstract:

This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: Finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier.

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Authors: M. Sandhya, R. M. Madhumitha, Sharmila Sankar

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Interoperable medical devices (IMDs) face threats due to the increased attack surface accessible by interoperability and the corresponding infrastructure. Initiating networking and coordination functionalities primarily modify medical systems' security properties. Understanding the threats is a vital first step in ultimately crafting security solutions for such systems. The key to this problem is coming up with some common types of threats or attacks with those of security and privacy, and providing this information as a roadmap. This paper analyses the security issues in interoperability of devices and presents the main types of threats that have to be considered to build a secured system.

Keywords: Interoperability, threats, attacks, medical devices.

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Authors: F. Djeffal, N. Lakhdar, T. Bendib

Abstract:

The study of the transport coefficients in electronic devices is currently carried out by analytical and empirical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the different characteristics of the electronic silicon-based devices. Further progress in the development, design and optimization of Silicon-based devices necessarily requires new theory and modeling tools. In our study, we use the PSO (Particle Swarm Optimization) technique as a computational tool to develop analytical approaches in order to study the transport phenomenon of the electron in crystalline silicon as function of temperature and doping concentration. Good agreement between our results and measured data has been found. The optimized analytical models can also be incorporated into the circuits simulators to study Si-based devices without impact on the computational time and data storage.

Keywords: Particle Swarm, electron mobility, Si-based devices, Optimization.

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Authors: Dil Nawaz Khan, M. H. Sayyad, Muhammad Yaseen, Munawar Ali Munawar, Mukhtar Ali

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Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Keywords: formyl-TIPPCu(II), Organic semiconductor, Photocapacitance, Polarizability.

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Authors: Youngji Yoo, Cheong-Sool Park, Jun Seok Kim, Young-Hak Lee, Sung-Shick Kim, Jun-Geol Baek

Abstract:

In the semiconductor manufacturing process, large amounts of data are collected from various sensors of multiple facilities. The collected data from sensors have several different characteristics due to variables such as types of products, former processes and recipes. In general, Statistical Quality Control (SQC) methods assume the normality of the data to detect out-of-control states of processes. Although the collected data have different characteristics, using the data as inputs of SQC will increase variations of data, require wide control limits, and decrease performance to detect outof- control. Therefore, it is necessary to separate similar data groups from mixed data for more accurate process control. In the paper, we propose a regression tree using split algorithm based on Pearson distribution to handle non-normal distribution in parametric method. The regression tree finds similar properties of data from different variables. The experiments using real semiconductor manufacturing process data show improved performance in fault detecting ability.

Keywords: Semiconductor, non-normal mixed process data, clustering, Statistical Quality Control (SQC), regression tree, Pearson distribution system.

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Authors: Zubair Ahmad, M. H. Sayyad, M. Yaseen, M. Ali

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In this work, an organic compound 5,10,15,20- Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu) is studied as an active material for thin film electronic devices. To investigate the electrical properties of TDTBPPCu, junction of TDTBPPCu with heavily doped n-Si and Al is fabricated. TDTBPPCu film was sandwiched between Al and n-Si electrodes. Various electrical parameters of TDTBPPCu are determined. The current-voltage characteristics of the junction are nonlinear, asymmetric and show rectification behavior, which gives the clue of formation of depletion region. This behavior indicates the potential of TDTBPPCu for electronics applications. The current-voltage and capacitance-voltage techniques are used to find the different electronic parameters.

Keywords: P-type, organic semiconductor, Electricalcharacteristics

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