Search results for: electron multiplying charge coupled devices

Authors: Wen W. Zhang, Qian Chen

Abstract:

Electron multiplying charge coupled devices (EMCCDs) have revolutionized the world of low light imaging by introducing on-chip multiplication gain based on the impact ionization effect in the silicon. They combine the sub-electron readout noise with high frame rates. Signal-to-noise Ratio (SNR) is an important performance parameter for low-light-level imaging systems. This work investigates the SNR performance of an EMCCD operated in Non-inverted Mode (NIMO) and Inverted Mode (IMO). The theory of noise characteristics and operation modes is presented. The results show that the SNR of is determined by dark current and clock induced charge at high gain level. The optimum SNR performance is provided by an EMCCD operated in NIMO in short exposure and strong cooling applications. In contrast, an IMO EMCCD is preferable.

Keywords: electron multiplying charge coupled devices, noise characteristics, operation modes, signal-to-noise ratioperformance

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Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

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Authors: Ioan Rusu

Abstract:

Let us consider that the entire universe is composed of a single hydrogen atom within which the electron is moving around the proton. In this case, according to classical theories of physics, radiation, photons respectively, should be absorbed by the electron. Depending on the number of photons absorbed, the electron radius of rotation around the proton is established. Until now, the principle of photons absorption by electrons and the electron transition to a new energy level, namely to a higher radius of rotation around the proton, is not clarified in physics. This paper aims to demonstrate that radiation, photons respectively, have mass and negative electrostatic charge similar to electrons but infinitely smaller. The experiments which demonstrate this theory are simple: thermal expansion, photoelectric effect and thermonuclear reaction.

Keywords: Electrostatic, electron, proton, photon, radiation.

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Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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Authors: M. Zahedian, B. Maraghechi, M. H. Rouhani

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A nonlinear model of two-beam free-electron laser (FEL) in the absence of slippage is presented. The two beams are assumed to be cold with different energies and the fundamental resonance of the higher energy beam is at the third harmonic of lower energy beam. By using Maxwell-s equations and full Lorentz force equations of motion for the electron beams, coupled differential equations are derived and solved numerically by the fourth order Runge–Kutta method. In this method a considerable growth of third harmonic electromagnetic field in the XUV and X-ray regions is predicted.

Keywords: Free-electron laser, Higher energy beam, Lowerenergy beam, Two-beam

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Authors: F. Djeffal, N. Lakhdar, T. Bendib

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The study of the transport coefficients in electronic devices is currently carried out by analytical and empirical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the different characteristics of the electronic silicon-based devices. Further progress in the development, design and optimization of Silicon-based devices necessarily requires new theory and modeling tools. In our study, we use the PSO (Particle Swarm Optimization) technique as a computational tool to develop analytical approaches in order to study the transport phenomenon of the electron in crystalline silicon as function of temperature and doping concentration. Good agreement between our results and measured data has been found. The optimized analytical models can also be incorporated into the circuits simulators to study Si-based devices without impact on the computational time and data storage.

Keywords: Particle Swarm, electron mobility, Si-based devices, Optimization.

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Authors: Vicente F. P. Aleixo, Augusto C. F. Saraiva, Jordan Del Nero

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The production of devices in nanoscale with specific molecular rectifying function is one of the most significant goals in state-of-art technology. In this work we show by ab initio quantum mechanics calculations coupled with non-equilibrium Green function, the design of an organic two-terminal device. These molecular structures have molecular source and drain with several bridge length (from five up to 11 double bonds). Our results are consistent with significant features as a molecular rectifier and can be raised up as: (a) it can be used as bi-directional symmetrical rectifier; (b) two devices integrated in one (FET with one operational region, and Thyristor thiristor); (c) Inherent stability due small intrinsic capacitance under forward/reverse bias. We utilize a scheme for the transport mechanism based on previous properties of ¤Ç bonds type that can be successfully utilized to construct organic nanodevices.

Keywords: ab initio, Carotenoid, Charge Transfer, Nanodevice

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Authors: A.G.E. Sutjipto, Jufriadi, R. Muhida, Afzeri, E.Y. Adesta

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Charging and discharging phenomenon on the surface of materials can be found in plasma display panel, spacecraft charging, high voltage insulator, etc. This report gives a simple explanation on this phenomenon. A scanning electron microscope was used not only as a tool to produce energetic electron beam to charge an insulator without metallic coating and to produce a surface discharging (surface breakdown/flashover) but also to observe the visible charging and discharging on the sample surface. A model of electric field distribution on the surface was developed in order to explain charging and discharging phenomena. Since charging and discharging process involves incubation time, therefore this process can be used to evaluate the insulation property of materials under electron bombardment.

Keywords: Flashover, SEM, Electron Bombardment, Electric Field.

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Authors: Jae Hyung Noh, Hang Geun Jeong

Abstract:

The charge-pump circuit is an important component in a phase-locked loop (PLL). The charge-pump converts Up and Down signals from the phase/frequency detector (PFD) into current. A conventional CMOS charge-pump circuit consists of two switched current sources that pump charge into or out of the loop filter according to two logical inputs. The mismatch between the charging current and the discharging current causes phase offset and reference spurs in a PLL. We propose a new charge-pump circuit to reduce the current mismatch by using a regulated cascode circuit. The proposed charge-pump circuit is designed and simulated by spectre with TSMC 0.18-μm 1.8-V CMOS technology.

Keywords: Phase-locked loop (PLL), charge-pump, phase/frequency detector (PFD), regulated cascode.

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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Authors: V.K. Mukhomorov

Abstract:

The solvated electron is self-trapped (polaron) owing to strong interaction with the quantum polarization field. If the electron and quantum field are strongly coupled then the collective localized state of the field and quasi-particle is formed. In such a formation the electron motion is rather intricate. On the one hand the electron oscillated within a rather deep polarization potential well and undergoes the optical transitions, and on the other, it moves together with the center of inertia of the system and participates in the thermal random walk. The problem is to separate these motions correctly, rigorously taking into account the conservation laws. This can be conveniently done using Bogolyubov-Tyablikov method of canonical transformation to the collective coordinates. This transformation removes the translational degeneracy and allows one to develop the successive approximation algorithm for the energy and wave function while simultaneously fulfilling the law of conservation of total momentum of the system. The resulting equations determine the electron transitions and depend explicitly on the translational velocity of the quasi-particle as whole. The frequency of optical transition is calculated for the solvated electron in ammonia, and an estimate is made for the thermal-induced spectral bandwidth.

Keywords: Canonical transformations, solvated electron, width of the optical spectrum.

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Authors: M.Machhout, M.Zeghid, W.El hadj youssef, B.Bouallegue, A.Baganne, R.Tourki

Abstract:

Long number multiplications (n ≥ 128-bit) are a primitive in most cryptosystems. They can be performed better by using Karatsuba-Ofman technique. This algorithm is easy to parallelize on workstation network and on distributed memory, and it-s known as the practical method of choice. Multiplying long numbers using Karatsuba-Ofman algorithm is fast but is highly recursive. In this paper, we propose different designs of implementing Karatsuba-Ofman multiplier. A mixture of sequential and combinational system design techniques involving pipelining is applied to our proposed designs. Multiplying large numbers can be adapted flexibly to time, area and power criteria. Computationally and occupation constrained in embedded systems such as: smart cards, mobile phones..., multiplication of finite field elements can be achieved more efficiently. The proposed designs are compared to other existing techniques. Mathematical models (Area (n), Delay (n)) of our proposed designs are also elaborated and evaluated on different FPGAs devices.

Keywords: finite field, Karatsuba-Ofman, long numbers, multiplication, mathematical model, recursivity.

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Authors: S. M. Giripunje, Shikha Jindal

Abstract:

Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 10⁴ times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.

Keywords: Graphene, mobility, nanocomposites, photovoltaics, quantum dots, zinc sulphide.

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Authors: Montree Kumngern, Kobchai Dejhan

Abstract:

Versatile dual-mode class-AB CMOS four-quadrant analog multiplier circuit is presented. The dual translinear loops and current mirrors are the basic building blocks in realization scheme. This technique provides; wide dynamic range, wide-bandwidth response and low power consumption. The major advantages of this approach are; its has single ended inputs; since its input is dual translinear loop operate in class-AB mode which make this multiplier configuration interesting for low-power applications; current multiplying, voltage multiplying, or current and voltage multiplying can be obtainable with balanced input. The simulation results of versatile analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth of about 19MHz, a maximum power consumption of 0.46mW, and temperature compensated. Operation of versatile analog multiplier was also confirmed through an experiment using CMOS transistor array.

Keywords: Class-AB, dual-mode CMOS analog multiplier, CMOS analog integrated circuit, CMOS translinear integrated circuit.

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Authors: M. Chitsazi, B. Maraghechi, M. H. Rouhani

Abstract:

Three-dimensional simulation of harmonic up generation in free electron laser amplifier operating simultaneously with a cold and relativistic electron beam is presented in steady-state regime where the slippage of the electromagnetic wave with respect to the electron beam is ignored. By using slowly varying envelope approximation and applying the source-dependent expansion to wave equations, electromagnetic fields are represented in terms of the Hermit Gaussian modes which are well suited for the planar wiggler configuration. The electron dynamics is described by the fully threedimensional Lorentz force equation in presence of the realistic planar magnetostatic wiggler and electromagnetic fields. A set of coupled nonlinear first-order differential equations is derived and solved numerically. The fundamental and third harmonic radiation of the beam is considered. In addition to uniform beam, prebunched electron beam has also been studied. For this effect of sinusoidal distribution of entry times for the electron beam on the evolution of radiation is compared with uniform distribution. It is shown that prebunching reduces the saturation length substantially. For efficiency enhancement the wiggler is set to decrease linearly when the radiation of the third harmonic saturates. The optimum starting point of tapering and the slope of radiation in the amplitude of wiggler are found by successive run of the code.

Keywords: Free electron laser, Prebunching, Undulator, Wiggler.

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Authors: Reza Abazari, Rasool Abazari

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In this paper, the two-dimension differential transformation method (DTM) is employed to obtain the closed form solutions of the three famous coupled partial differential equation with physical interest namely, the coupled Korteweg-de Vries(KdV) equations, the coupled Burgers equations and coupled nonlinear Schrödinger equation. We begin by showing that how the differential transformation method applies to a linear and non-linear part of any PDEs and apply on these coupled PDEs to illustrate the sufficiency of the method for this kind of nonlinear differential equations. The results obtained are in good agreement with the exact solution. These results show that the technique introduced here is accurate and easy to apply.

Keywords: Coupled Korteweg-de Vries(KdV) equation, Coupled Burgers equation, Coupled Schrödinger equation, differential transformation method.

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Authors: R. Sarathi, M. G. Danikas, Y. Chen, T. Tanaka

Abstract:

In the present work, Pulsed Electro Acoustic (PEA) technique was adopted to understand the space charge dynamics in elastomeric material. It is observed that the polarity of the applied DC voltage voltage and its magnitude alters the space charge dynamics in insulation structure. It is also noticed that any addition of compound to the base material/processing technique have characteristic variation in the space charge injection process. It could be concluded based on the present work that the plasticizer could inject heterocharges into the insulation medium. Also it is realized that space charge magnitude is less with the addition of plasticizer. In the PEA studies, it is observed that local electric field in the insulating material can be much more than applied electric field due to space charge formation. One of the important conclusions arrived at based on PEA technique is that one could understand the safe operating electric field of an insulation material and the charge trap sites.

Keywords: Pulsed electro acoustic technique, space charge, DCvoltage, elastomers, Electric field, high voltage.

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Authors: Sharief F. Babiker, Abdelkareem Bedri, Rania Naeem

Abstract:

The implementation of single-electron tunneling (SET) simulators based on the master-equation (ME) formalism requires the efficient and accurate identification of an exhaustive list of active states and related tunnel events. Dynamic simulations also require the control of the emerging states and guarantee the safe elimination of decaying states. This paper describes algorithms for use in the stationary and dynamic control of the lists of active states and events. The paper presents results obtained using these algorithms with different SET structures.

Keywords: Active state, Coulomb blockade, Master Equation, Single electron devices

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Authors: Suraka Bhattacharjee, Ranjan Chaudhury

Abstract:

The interaction between the charge degrees of freedom for itinerant antiferromagnets is investigated in terms of generalized charge stiffness constant corresponding to nearest neighbour t-J model and t1-t2-t3-J model. The low dimensional hole doped antiferromagnets are the well known systems that can be described by the t-J-like models. Accordingly, we have used these models to investigate the fermionic pairing possibilities and the coupling between the itinerant charge degrees of freedom. A detailed comparison between spin and charge couplings highlights that the charge and spin couplings show very similar behaviour in the over-doped region, whereas, they show completely different trends in the lower doping regimes. Moreover, a qualitative equivalence between generalized charge stiffness and effective Coulomb interaction is also established based on the comparisons with other theoretical and experimental results. Thus it is obvious that the enhanced possibility of fermionic pairing is inherent in the reduction of Coulomb repulsion with increase in doping concentration. However, the increased possibility can not give rise to pairing without the presence of any other pair producing mechanism outside the t-J model. Therefore, one can conclude that the t-J-like models themselves solely are not capable of producing conventional momentum-based superconducting pairing on their own.

Keywords: Generalized charge stiffness constant, charge coupling, effective Coulomb interaction, t-J-like models, momentum-space pairing.

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Authors: Maciej Paszynski, Leszek Demkowicz, Jason Kurtz

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In this paper, a new formulation for acoustics coupled with linear elasticity is presented. The primary objective of the work is to develop a three dimensional hp adaptive finite element method code destinated for modeling of acoustics of human head. The code will have numerous applications e.g. in designing hearing protection devices for individuals working in high noise environments. The presented work is in the preliminary stage. The variational formulation has been implemented and tested on a sequence of meshes with concentric multi-layer spheres, with material data representing the tissue (the brain), skull and the air. Thus, an efficient solver for coupled elasticity/acoustics problems has been developed, and tested on high contrast material data representing the human head.

Keywords: finite element method, acoustics, coupled problems, biomechanics

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Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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Authors: Thanapiyawanit Bancha, Lu Jau-Huai

Abstract:

In this study, we developed a model to predict the temperature and the pressure variation in an internal combustion engine operated in HCCI (Homogeneous charge compression ignition) mode. HCCI operation begins from aspirating of homogeneous charge mixture through intake valve like SI (Spark ignition) engine and the premixed charge is compressed until temperature and pressure of mixture reach autoignition point like diesel engine. Combustion phase was described by double-Wiebe function. The single zone model coupled with an double-Wiebe function were performed to simulated pressure and temperature between the period of IVC (Inlet valve close) and EVO (Exhaust valve open). Mixture gas properties were implemented using STANJAN and transfer the results to main model. The model has considered the engine geometry and enables varying in fuelling, equivalence ratio, manifold temperature and pressure. The results were compared with the experiment and showed good correlation with respect to combustion phasing, pressure rise, peak pressure and temperature. This model could be adapted and use to control start of combustion for HCCI engine.

Keywords: Double-Wiebe function, HCCI, Ignition enhancer, Single zone model.

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Authors: Yinchang Du, Yangfang Li

Abstract:

In this work, we used the single Langmuir probe to measure the plasma density distribution in an geometrically asymmetric capacitive coupled plasma discharge system. Because of the frame structure of powered electrode, the plasma density was not homogeneous in the discharge volume. It was higher under the frame, but lower in the centre. Finite element simulation results showed a good agreement with the experiment results. To increase the electron density in the central volume and improve the homogeneity of the plasma, we added an auxiliary electrode, powered by DC voltage, in the simulation geometry. The simulation results showed that the auxiliary electrode could alter the potential distribution and improve the density homogeneity effectively.

Keywords: Capacitive coupled discharge, asymmetric discharge, homogeneous plasma.

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Authors: Michael G. Pantelyat

Abstract:

Fundamental basics of pure and applied research in the area of magneto-thermo-mechanical numerical analysis and design of innovative electromagnetic devices (modern induction heaters, novel thermoelastic actuators, rotating electrical machines, induction cookers, electrophysical devices) are elaborated. Thus, mathematical models of magneto-thermo-mechanical processes in electromagnetic devices taking into account main interactions of interrelated phenomena are developed. In addition, graphical representation of coupled (multiphysics) phenomena under consideration is proposed. Besides, numerical techniques for nonlinear problems solution are developed. On this base, effective numerical algorithms for solution of actual problems of practical interest are proposed, validated and implemented in applied 2D and 3D computer codes developed. Many applied problems of practical interest regarding modern electrical engineering devices are numerically solved. Investigations of the influences of various interrelated physical phenomena (temperature dependences of material properties, thermal radiation, conditions of convective heat transfer, contact phenomena, etc.) on the accuracy of the electromagnetic, thermal and structural analyses are conducted. Important practical recommendations on the choice of rational structures, materials and operation modes of electromagnetic devices under consideration are proposed and implemented in industry.

Keywords: Electromagnetic devices, multiphysics, numerical analysis, simulation and design.

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Authors: N. Basanta Singh, Sanjoy Deb, G. P Mishra, Subir Kumar Sarkar

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Carrier mobility has become the most important characteristic of high speed low dimensional devices. Due to development of very fast switching semiconductor devices, speed of computer and communication equipment has been increasing day by day and will continue to do so in future. As the response of any device depends on the carrier motion within the devices, extensive studies of carrier mobility in the devices has been established essential for the growth in the field of low dimensional devices. Small-signal ac transport of degenerate two-dimensional hot electrons in GaAs quantum wells is studied here incorporating deformation potential acoustic, polar optic and ionized impurity scattering in the framework of heated drifted Fermi-Dirac carrier distribution. Delta doping is considered in the calculations to investigate the effects of double delta doping on millimeter and submillimeter wave response of two dimensional hot electrons in GaAs nanostructures. The inclusion of delta doping is found to enhance considerably the two dimensional electron density which in turn improves the carrier mobility (both ac and dc) values in the GaAs quantum wells thereby providing scope of getting higher speed devices in future.

Keywords: Carrier mobility, Delta doping, Hot carriers, Quantum wells.

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Authors: Ghassan H. Halasa

Abstract:

Elementary particles are created in pairs of equal and opposite momentums at a reference frame at the speed of light. The speed of light reference frame is viewed as a point in space as observed by observer at rest. This point in space is the bang location of the big bang theory. The bang in the big bang theory is not more than sustained flow of pairs of positive and negative elementary particles. Electrons and negative charged elementary particles are ejected from this point in space at velocities faster than light, while protons and positively charged particles obtain velocities lower than light. Subsonic masses are found to have real and positive charge, while supersonic masses are found to be negative and imaginary indicating that the two masses are of different entities. The electron-s super-sonic speed, as viewed by rest observer was calculated and found to be less than the speed of light and is little higher than the electron speed in Bohr-s orbit. The newly formed hydrogen gas temperature was found to be in agreement with temperatures found on newly formed stars. Universe expansion was found to be in agreement. Partial mass and charge elementary particles and particles with momentum only were explained in the context of this theoretical approach.

Keywords: Evolution of Matter, Multidimensional spaces, relativity, Big Bang Theory

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Authors: N. Ruangkajonmathee, R. Thiamsri, B. Marungsri

Abstract:

This paper presents the experimental results on space charge distribution in cross-linked polyethylene (XLPE) insulating material for 22 kV power distribution system cable by using pulse electroacoustic measurement technique (PEA). Numbers of XLPE insulating material ribbon having thickness 60 μm taken from unused 22 kV high voltage cable were used as specimen in this study. DC electric field stress was applied to test specimen at room temperature (25°C). Four levels of electric field stress, 25 kV/mm, 50 kV/mm, 75 kV/mm and 100 kV/mm, were used. In order to investigate space charge distribution characteristic, space charge distribution characteristics were measured after applying electric field stress 15 min, 30 min and 60 min, respectively. The results show that applied time and magnitude of dc electric field stress play an important role to the formation of space charge.

Keywords: Space charge distribution, pulsed electroacoustic(PEA) technique, cross-linked polyethylene (XLPE), DC electrical fields stress.

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Authors: Ella C. Linganiso, Bonex W. Mwakikunga, Trilock Singh, Sanjay Mathur, Odireleng M. Ntwaeaborwa

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The use of nanostructured semiconducting material to catalyze degradation of environmental pollutants still receives much attention to date. One of the desired characteristics for pollutant degradation under ultra-violet visible light is the materials with extended carrier charge separation that allows for electronic transfer between the catalyst and the pollutants. In this work, zinc oxide n-type semiconductor vertically aligned structures were fabricated on silicon (100) substrates using the chemical bath deposition method. The as-synthesized structures were treated with nickel and sulphur. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy were used to characterize the phase purity, structural dimensions and elemental composition of the obtained structures respectively. Photoluminescence emission measurements showed a decrease in both the near band edge emission as well as the defect band emission upon addition of nickel and sulphur with different concentrations. This was attributed to increased charger-carrier-separation due to the presence of Ni-S material on ZnO surface, which is linked to improved charge transfer during photocatalytic reactions.

Keywords: Carrier-charge-separation, nickel, sulphur, zinc oxide, photoluminescence.

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Authors: K. Easawi, M. Nabil, T. Abdallah, S. Negm, H. Talaat

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Composite nanostructures of metal core/semiconductor shell (Au/CdS) configuration were prepared using organometalic method. UV-Vis spectra for the Au/CdS colloids show initially two well separated bands, corresponding to surface plasmon of the Au core, and the exciton of CdS shell. The absorption of CdS shell is enhanced, while the Au plasmon band is suppressed as the shell thickness increases. The shell sizes were estimated from the optical spectra using the effective mass approximation model (EMA), and compared to the sizes of the Au core and CdS shell measured by high resolution transmission electron microscope (HRTEM). The changes in the absorption features are discussed in terms of gradual increase in the coupling strength of the Au core surface plasmon and the exciton in the CdS. leading to charge transfer and modification of electron oscillation in Au core.

Keywords: Nanocomposites, Plasmonics.

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Authors: Gururaj S Punekar, N K Kishore Senior, H S Y Shastry

Abstract:

Charge Simulation Method (CSM) is one of the very widely used numerical field computation technique in High Voltage (HV) engineering. The high voltage fields of varying non uniformities are encountered in practice. CSM programs being case specific, the simulation accuracies heavily depend on the user (programmers) experience. Here is an effort to understand CSM errors and evolve some guidelines to setup accurate CSM models, relating non uniformities with assignment factors. The results are for the six-point-charge model of sphere-plane gap geometry. Using genetic algorithm (GA) as tool, optimum assignment factors at different non uniformity factors for this model have been evaluated and analyzed. It is shown that the symmetrically placed six-point-charge models can be good enough to set up CSM programs with potential errors less than 0.1% when the field non uniformity factor is greater than 2.64 (field utilization factor less than 52.76%).

Keywords: Assignment factor, Charge Simulation Method, High Voltage, Numerical field computation, Non uniformity factor, Simulation errors.

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