**Commenced**in January 2007

**Frequency:**Monthly

**Edition:**International

**Paper Count:**31741

##### Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures

**Authors:**
N. Basanta Singh,
Sanjoy Deb,
G. P Mishra,
Subir Kumar Sarkar

**Abstract:**

**Keywords:**
Carrier mobility,
Delta doping,
Hot carriers,
Quantum wells.

**Digital Object Identifier (DOI):**
doi.org/10.5281/zenodo.1072441

**References:**

[1] "Technology roadmap for nanoelectronics," Published by European Commission IST programme on Future and Emerging Technologies, Nov. 2000. Available: http://www.cordis.lu/ist/fetnid.htm.

[2] R. Dingle, H. L. Stormer, A. C. Gossard and W. Wiegmann, "Electron mobilities in modulation-doped semiconductor heterojunction superlattices," Appl. Phys. Lett., vol. 33, no. 7, pp. 665-667, Oct. 1978.

[3] J. J. Harris, J A Pals and R Woltjer, "Electronic transport in lowdimensional structures," Rep. Prog. Phys., vol. 52, pp.1217-1266, Oct. 1989.

[4] C T Foxon, J J Harris, D Hilton, J Hewett and C Roberts, "Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities & ultra high mobilities at low temperature, "Semicond. Sci. Technol., vol. 4, pp. 582-595, Apr. 1989.

[5] M. Heiblum, E. E. Mendez and F. Stern, "High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions," Appl. Phys. Lett., vol. 44, no.11, pp. 1064-1066, Jun. 1984

[6] E. F. Schubert, "Delta doping of III-V compound semiconductor: Fundamental and device applications, "J. Vac. Sci. Technol. A, vol. 87, no. 3, pp. 2980-2996, May 1990

[7] Guo-Qiang Hai, Nelson Studart and F. M. Peeters, "Electron mobility in two coupled layers, " Phys. Rev. B, vol. 52, no. 15, pp.11273-11276, Oct. 1995

[8] P. J. Price, "Two-dimensional electron transport in semiconductor layers. I. Phonon scattering," Ann. Phys., vol. 133, pp. 217-239, May. 1981.

[9] T. Tsuchiya and T Ando, "Electron-phonon interaction in GaAs/AlAs superlattices," Phys. Rev. B, vol. 47, no. 12, pp. 7240-7252, Mar. 1993.

[10] T. Tsuchiya and T Ando, "Mobility enhancement in quantum wells by electronic-state modulation," Phys. Rev. B, vol. 48, no. 7, pp. 4599-4603, Aug. 1993

[11] Subir Kumar Sarkar, "Effects of wave function modulation on highfrequency carrier transport in quantum wells under high biasing field," Indian J. Phys., vol. 78, no. 7, pp. 535-538, 2004.

[12] X. T Zhu, H. Goronkin, G. N. Maracas, R. Droopad and M. Stroscio, " Electron mobility enhancement by confining optical phonons in GaAs/AlAs multiple quantum wells," Appl. Phys. Lett., vol. 60, no. 17, pp. 2141-2143, Apr. 1992.

[13] J. Pozela, V. Juciene , A. Namajunas and K. Pozela, "Electron mobility and subband population tuning by a phonon wall inserted in a semiconductor quantum well, "J. Appl. Phys., vol. 81, no. 4, pp. 1775- 1780, Feb. 1997.

[14] H. Harikawa, H. Sakaki and J. Yoshino, "Concentrations of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer layer thickness and gate electric field," Appl. Phys. Lett., vol. 45, no. 3, pp. 253-255, Aug. 1984.

[15] L. Chico, W Laskolski, R Perez-Alvarez and F Garcia Moliner, "On the theory of GaAs-based quantum wells with external -doping, J. Phys.: Condens. Matters, vol. 5, pp.9069-9076 Aug. 1993.

[16] H.J Gossmann and E.F. Schubert, "Delta doping in Silicone," Solid State and Material Sc., vol. 18, no. 1, pp. 1-67, Jan. 1993

[17] Ikai Lo, Y. C. Chang, H. M. Weng, and J. C. Chiang, "Two-dimensional electron gas in -doped double quantum wells for photodetector application," J. Appl. Phys., vol. 81, no. 12, pp. 8112-8114, Jun. 1997.

[18] E. F Schubert, J. E. Cunningham, W.T Tsang and G.L. Timp, "Selectively -doped AlxGa1-xAs/GaAs heterostructures with high twodimensional electron-gas concentrations n2DEG>1.5x1012 cm-2 for fieldeffect transistors, "Appl. Phys. Lett., vol. 51, no. 15, pp. 1170-1172 Oct. 1987

[19] E. F Schubert, A. Fischer and K. Ploog, "The delta doped field effect transistor (FET), "IEEE Trans. Electron Devices, vol. 33, no. 5, pp. 625-632 May 1986.

[20] E. F Schubert, J. E. Cunningham, W.T Tsang, "Electron-mobility enhancement and electron-concentration enhancement in -doped n- GaAs at T=300K, " Solid State Commun., vol. 63, pp. 591-594, 1987

[21] E. F Schubert, J. E. Cunningham, and W.T Tsang, "Self-aligned enhancement-mode and depletion-mode GaAs field effect transistor employing the -doping technique," Appl. Phys. Lett., 49, no. 25, pp. 1729-1731, Dec. 1986.

[22] E. F Schubert, A. Fischer, Y. Horikoshi, and K. Ploog, "GaAs sawtooth superlattice laser emitting at wavelength λ>0.9┬Ám," Appl. Phys. Lett., vol. 47, no. 3, pp. 219-221, Aug. 1985.

[23] H.J Gossmann and E.F. Schubert, "Delta doping in Silicone," Solid State & Material Sc., vol. 18, no. 1, pp. 1-67, Jan. 1993.

[24] J. E. Cunningham, W.T. Tsang, G. Timp, E. F. Schubert, A. M. Chang and K. Owusu-Sekyer, " Quantum size effects in monolayer doped heterostructures," Phys. Rev. B, vol. 37,no. 8, pp. 4317-4320, Mar. 1988.

[25] T. Y Kuo, J. E Cunningham, E. F Schubert, W. T Tsang, T. H Chiu, R Ren and C. G Fonstad, " Selectively -doped quantum well transistor grown by gas source molecular beam epitaxy," J. Appl. Phys., vol. 64, no. 6, pp. 3324- 3327, Sept. 1988.

[26] V.M.S.Gomes,A.S. Chavas, J. R Leite and J.M.Worlock,"Self-consistent calculations of the two-dimensional electron density in modulationdoped superlattices," Phys. Rev. B, 35 (8), pp. 3984-3989, Mar. 1978.

[27] S. K. Sarkar,P. K. Ghosh and D. Chattopadhyay, "Calculations of highfrequency response of two-dimensional hot electrons in GaAs quantum wells," J. Appl. Phys., vol. 78, no. 1, pp. 283-287, July 1995.

[28] S. K. Sarkar, "Multiple level optimization for high frequency ac mobility in GaAs quantum wells under hot-electron condition," Comp. Mat. Sci., vol-29, pp. 243-249, 2004.

[29] S. K. Sarkar, A. Moi , C. Puttamadappa , A.K. Day and M.K. Naskar, "Application of genetic algorithm to determine the optimized system parameters of GaAs quantum wells for better high-frequency performance under hot electron condition," Physica B, vol. 325, pp.189- 194, 2003.

[30] J. P. Leburton, "Size effects on polar optical phonon scattering of 1-D and 2-D electron gas in synthetic