Search results for: tunnel field effect transistor.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 6715

Search results for: tunnel field effect transistor.

6385 Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design

Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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6384 An Ising-based Model for the Spread of Infection

Authors: Christian P. Crisostomo, Chrysline Margus N. Piñol

Abstract:

A zero-field ferromagnetic Ising model is utilized to simulate the propagation of infection in a population that assumes a square lattice structure. The rate of infection increases with temperature. The disease spreads faster among individuals with low J values. Such effect, however, diminishes at higher temperatures.

Keywords: Epidemiology, Ising model, lattice models

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6383 Mathematical Modeling of Elastically Creeping State of Arbitrarily Orientated Cavities in the Transversally Isotropic Massif

Authors: N. Azhikhanov, T. Turimbetov, Zh. Masanov, N. Zhunisov

Abstract:

It can be determined in preference between representative mechanical and mathematical model of elasticcreeping deformation of transversally isotropic array with doubly periodic system of tilted slots, and offer of the finite elements calculation scheme, and inspection of the states of two diagonal arbitrary profile cavities of deep inception, and in setting up the tense and dislocation fields distribution nature in computing processes.

Keywords: Mathematical model, tunnel, transversally isotropic, finite elements.

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6382 High Level Characterization and Optimization of Switched-Current Sigma-Delta Modulators with VHDL-AMS

Authors: A. Fakhfakh, N. Ksentini, M. Loulou, N. Masmoudi, J. J. Charlot

Abstract:

Today, design requirements are extending more and more from electronic (analogue and digital) to multidiscipline design. These current needs imply implementation of methodologies to make the CAD product reliable in order to improve time to market, study costs, reusability and reliability of the design process. This paper proposes a high level design approach applied for the characterization and the optimization of Switched-Current Sigma- Delta Modulators. It uses the new hardware description language VHDL-AMS to help the designers to optimize the characteristics of the modulator at a high level with a considerably reduced CPU time before passing to a transistor level characterization.

Keywords: high level design, optimization, switched-Current Sigma-Delta Modulators, VHDL-AMS.

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6381 Memristor: The Missing Circuit Element and its Application

Authors: Vishnu Pratap Singh Kirar

Abstract:

Memristor is also known as the fourth fundamental passive circuit element. When current flows in one direction through the device, the electrical resistance increases and when current flows in the opposite direction, the resistance decreases. When the current is stopped, the component retains the last resistance that it had, and when the flow of charge starts again, the resistance of the circuit will be what it was when it was last active. It behaves as a nonlinear resistor with memory. Recently memristors have generated wide research interest and have found many applications. In this paper we survey the various applications of memristors which include non volatile memory, nanoelectronic memories, computer logic, neuromorphic computer architectures low power remote sensing applications, crossbar latches as transistor replacements, analog computations and switches.

Keywords: Memristor, non-volatile memory, arithmatic operation, programmable resistor.

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6380 Implementation and Analysis of Elliptic Curve Cryptosystems over Polynomial basis and ONB

Authors: Yong-Je Choi, Moo-Seop Kim, Hang-Rok Lee, Ho-Won Kim

Abstract:

Polynomial bases and normal bases are both used for elliptic curve cryptosystems, but field arithmetic operations such as multiplication, inversion and doubling for each basis are implemented by different methods. In general, it is said that normal bases, especially optimal normal bases (ONB) which are special cases on normal bases, are efficient for the implementation in hardware in comparison with polynomial bases. However there seems to be more examined by implementing and analyzing these systems under similar condition. In this paper, we designed field arithmetic operators for each basis over GF(2233), which field has a polynomial basis recommended by SEC2 and a type-II ONB both, and analyzed these implementation results. And, in addition, we predicted the efficiency of two elliptic curve cryptosystems using these field arithmetic operators.

Keywords: Elliptic Curve Cryptosystem, Crypto Algorithm, Polynomial Basis, Optimal Normal Basis, Security.

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6379 Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs

Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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6378 Experimental Simulation of Soil Boundary Condition for Dynamic Studies

Authors: Omar.S. Qaftan, T. T. Sabbagh

Abstract:

This paper studies the free-field response by adopting a flexible membrane container as soil boundary for experimental shaking table tests. The influence of the soil container boundary on the soil behaviour and the dynamic soil properties under seismic effect were examined. A flexible container with 1/50 scale factor was adopted in the experimental tests, including construction, instrumentation, and determination of the results of dynamic tests on a shaking table. Horizontal face displacements and accelerations were analysed to determine the influence of the container boundary on the performance of the soil. The outputs results show that the flexible boundary container allows more displacement and larger accelerations. The soil in a rigid wall container cannot deform as similar as the soil in the real field does. Therefore, the response of flexible container tested is believed to be more reliable for soil boundary than that in the rigid container.

Keywords: Soil, boundary, seismic, earthquake, ground motion.

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6377 Electrophoretic Motion of a Liquid Droplet within an Uncharged Cylindrical Pore

Authors: Cheng-Hsuan Huang, Eric Lee

Abstract:

Electrophoretic motion of a liquid droplet within an uncharged cylindrical pore is investigated theoretically in this study. It is found that the boundary effect in terms of the reduction of droplet mobility (droplet velocity per unit strength of the applied electric field) is very significant when the double layer surrounding the droplet is thick, and diminishes as it gets very thin. Moreover, the viscosity ratio of the ambient fluid to the internal one, σ, is a crucial factor in determining its electrophoretic behavior. The boundary effect is less significant as the viscosity ratio gets high. Up to 70% mobility reduction is observed when this ratio is low (σ = 0.01), whereas only 40% reduction when it is high (σ = 100). The results of this study can be utilized in various fields of biotechnology, such as a biosensor or a lab-on-a-chip device.

Keywords: Cylindrical pore, Electrophoresis, Lab-on-a-chip, Liquid droplet

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6376 Experimental Study of Unconfined and Confined Isothermal Swirling Jets

Authors: Rohit Sharma, Fabio Cozzi

Abstract:

A 3C-2D PIV technique was applied to investigate the swirling flow generated by an axial plus tangential type swirl generator. This work is focused on the near-exit region of an isothermal swirling jet to characterize the effect of swirl on the flow field and to identify the large coherent structures both in unconfined and confined conditions for geometrical swirl number, Sg = 4.6. Effects of the Reynolds number on the flow structure were also studied. The experimental results show significant effects of the confinement on the mean velocity fields and its fluctuations. The size of the recirculation zone was significantly enlarged upon confinement compared to the free swirling jet. Increasing in the Reynolds number further enhanced the recirculation zone. The frequency characteristics have been measured with a capacitive microphone which indicates the presence of periodic oscillation related to the existence of precessing vortex core, PVC. Proper orthogonal decomposition of the jet velocity field was carried out, enabling the identification of coherent structures. The time coefficients of the first two most energetic POD modes were used to reconstruct the phase-averaged velocity field of the oscillatory motion in the swirling flow. The instantaneous minima of negative swirl strength values calculated from the instantaneous velocity field revealed the presence of two helical structures located in the inner and outer shear layers and this structure fade out at an axial location of approximately z/D = 1.5 for unconfined case and z/D = 1.2 for confined case. By phase averaging the instantaneous swirling strength maps, the 3D helical vortex structure was reconstructed.

Keywords: Acoustic probes, 3C-2D particle image velocimetry, PIV, precessing vortex core, PVC, recirculation zone.

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6375 Numerical Simulation of the Flow Field around a Vertical Flat Plate of Infinite Extent

Authors: Marco Raciti Castelli, Paolo Cioppa, Ernesto Benini

Abstract:

This paper presents a CFD analysis of the flow field around a thin flat plate of infinite span inclined at 90° to a fluid stream of infinite extent. Numerical predictions have been compared to experimental measurements, in order to assess the potential of the finite volume code of determining the aerodynamic forces acting on a bluff body invested by a fluid stream of infinite extent. Several turbulence models and spatial node distributions have been tested. Flow field characteristics in the neighborhood of the flat plate have been investigated, allowing the development of a preliminary procedure to be used as guidance in selecting the appropriate grid configuration and the corresponding turbulence model for the prediction of the flow field over a two-dimensional vertical flat plate.

Keywords: CFD, vertical flat plate, aerodynamic force

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6374 Simulation of Sloshing behavior using Moving Grid and Body Force Methods

Authors: Tadashi Watanabe

Abstract:

The flow field and the motion of the free surface in an oscillating container are simulated numerically to assess the numerical approach for studying two-phase flows under oscillating conditions. Two numerical methods are compared: one is to model the oscillating container directly using the moving grid of the ALE method, and the other is to simulate the effect of container motion using the oscillating body force acting on the fluid in the stationary container. The two-phase flow field in the container is simulated using the level set method in both cases. It is found that the calculated results by the body force method coinsides with those by the moving grid method and the sloshing behavior is predicted well by both the methods. Theoretical back ground and limitation of the body force method are discussed, and the effects of oscillation amplitude and frequency are shown.

Keywords: Two-phase flow, simulation, oscillation, moving grid, body force

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6373 Motion Parameter Estimation via Dopplerlet-Transform-Based Matched Field Processing

Authors: Hongyan Dai

Abstract:

This work presents a matched field processing (MFP) algorithm based on Dopplerlet transform for estimating the motion parameters of a sound source moving along a straight line and with a constant speed by using a piecewise strategy, which can significantly reduce the computational burden. Monte Carlo simulation results and an experimental result are presented to verify the effectiveness of the algorithm advocated.

Keywords: matched field processing; Dopplerlet transform; motion parameter estimation; piecewise strategy

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6372 On the Multiplicity of Discriminants of Relative Quadratic Extensions of Quintic Fields

Authors: Schehrazad Selmane

Abstract:

According to Hermite there exists only a finite number of number fields having a given degree, and a given value of the discriminant, nevertheless this number is not known generally. The determination of a maximum number of number fields of degree 10 having a given discriminant that contain a subfield of degree 5 having a fixed class number, narrow class number and Galois group is the purpose of this work. The constructed lists of the first coincidences of 52 (resp. 50, 40, 48, 22, 6) nonisomorphic number fields with same discriminant of degree 10 of signature (6,2) (resp. (4,3), (8,1), (2,4), (0,5), (10,0)) containing a quintic field. For each field in the lists, we indicate its discriminant, the discriminant of its subfield, a relative polynomial generating the field over its quintic field and its relative discriminant, the corresponding polynomial over Q and its Galois closure are presented with concluding remarks.

Keywords: Discriminant, nonisomorphic fields, quintic fields, relative quadratic extensions.

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6371 Region Based Hidden Markov Random Field Model for Brain MR Image Segmentation

Authors: Terrence Chen, Thomas S. Huang

Abstract:

In this paper, we present the region based hidden Markov random field model (RBHMRF), which encodes the characteristics of different brain regions into a probabilistic framework for brain MR image segmentation. The recently proposed TV+L1 model is used for region extraction. By utilizing different spatial characteristics in different brain regions, the RMHMRF model performs beyond the current state-of-the-art method, the hidden Markov random field model (HMRF), which uses identical spatial information throughout the whole brain. Experiments on both real and synthetic 3D MR images show that the segmentation result of the proposed method has higher accuracy compared to existing algorithms.

Keywords: Finite Gaussian mixture model, Hidden Markov random field model, image segmentation, MRI.

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6370 Simulation of Piezoelectric Laminated Smart Structure under Strong Electric Field

Authors: Shun-Qi Zhang, Shu-Yang Zhang, Min Chen

Abstract:

Applying strong electric field on piezoelectric actuators, on one hand very significant electroelastic material nonlinear effects will occur, on the other hand piezo plates and shells may undergo large displacements and rotations. In order to give a precise prediction of piezolaminated smart structures under large electric field, this paper develops a finite element (FE) model accounting for both electroelastic material nonlinearity and geometric nonlinearity with large rotations based on the first order shear deformation (FSOD) hypothesis. The proposed FE model is applied to analyze a piezolaminated semicircular shell structure.

Keywords: Smart structures, piezolamintes, material nonlinearity, geometric nonlinearity, strong electric field.

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6369 A Novel Low Power Digitally Controlled Oscillator with Improved linear Operating Range

Authors: Nasser Erfani Majd, Mojtaba Lotfizad

Abstract:

In this paper, an ultra low power and low jitter 12bit CMOS digitally controlled oscillator (DCO) design is presented. Based on a ring oscillator implemented with low power Schmitt trigger based inverters. Simulation of the proposed DCO using 32nm CMOS Predictive Transistor Model (PTM) achieves controllable frequency range of 550MHz~830MHz with a wide linearity and high resolution. Monte Carlo simulation demonstrates that the time-period jitter due to random power supply fluctuation is under 31ps and the power consumption is 0.5677mW at 750MHz with 1.2V power supply and 0.53-ps resolution. The proposed DCO has a good robustness to voltage and temperature variations and better linearity comparing to the conventional design.

Keywords: digitally controlled oscillator (DCO), low power, jitter; good linearity, robust

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6368 Efficient Hardware Implementation of an Elliptic Curve Cryptographic Processor Over GF (2 163)

Authors: Massoud Masoumi, Hosseyn Mahdizadeh

Abstract:

A new and highly efficient architecture for elliptic curve scalar point multiplication which is optimized for a binary field recommended by NIST and is well-suited for elliptic curve cryptographic (ECC) applications is presented. To achieve the maximum architectural and timing improvements we have reorganized and reordered the critical path of the Lopez-Dahab scalar point multiplication architecture such that logic structures are implemented in parallel and operations in the critical path are diverted to noncritical paths. With G=41, the proposed design is capable of performing a field multiplication over the extension field with degree 163 in 11.92 s with the maximum achievable frequency of 251 MHz on Xilinx Virtex-4 (XC4VLX200) while 22% of the chip area is occupied, where G is the digit size of the underlying digit-serial finite field multiplier.

Keywords: Elliptic curve cryptography, FPGA implementation, scalar point multiplication.

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6367 Sensitivity of Input Blocking Capacitor on Output Voltage and Current of a PV Inverter Employing IGBTs

Authors: Z.A. Jaffery, Vinay Kumar Chandna, Sunil Kumar Chaudhary

Abstract:

This paper present a MATLAB-SIMULINK model of a single phase 2.5 KVA, 240V RMS controlled PV VSI (Photovoltaic Voltage Source Inverter) inverter using IGBTs (Insulated Gate Bipolar Transistor). The behavior of output voltage, output current, and the total harmonic distortion (THD), with the variation in input dc blocking capacitor (Cdc), for linear and non-linear load has been analyzed. The values of Cdc as suggested by the other authors in their papers are not clearly defined and it poses difficulty in selecting the proper value. As the dc power stored in Cdc, (generally placed parallel with battery) is used as input to the VSI inverter. The simulation results shows the variation in the output voltage and current with different values of Cdc for linear and non-linear load connected at the output side of PV VSI inverter and suggest the selection of suitable value of Cdc.

Keywords: DC Blocking capacitor, IGBTs, PV VSI, THD.

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6366 Effect of Domestic Treated Wastewater use on Three Varieties of Quinoa (Chenopodium quinoa) under Semi Arid Conditions

Authors: El Youssfi L., Choukr-Allah R., Zaafrani M., Mediouni T., Ba Samba M., Hirich A

Abstract:

The purpose of this work was to study the effect of the irrigation using waste water with various electric conductivities (T(0,92ds/m), EC3 (3ds/m) and EC6 (6ds/m) on three varieties of quinoa cultivated in a field south of Morocco. The follow up of the evolution of the chemical and agronomic parameters throughout the culture made it possible to determine the responses to the saline stress in arid conditions. Results showed that the salinity caused the depression of plant-s height, and reduced the fresh and dry weight in the different parts of the three varieties plants. The increase of the irrigation water EC didn-t affect the yield for the varieties. Thus, quinoa resisted to salinity and proved a behavior of a facultative halophyte crop. In fact, the cultivation of this using treated wastewater is feasible especially in arid areas for a sustainable use of water resources.

Keywords: Quinoa, salinity, semi-arid, treated wastewater.

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6365 Image Modeling Using Gibbs-Markov Random Field and Support Vector Machines Algorithm

Authors: Refaat M Mohamed, Ayman El-Baz, Aly A. Farag

Abstract:

This paper introduces a novel approach to estimate the clique potentials of Gibbs Markov random field (GMRF) models using the Support Vector Machines (SVM) algorithm and the Mean Field (MF) theory. The proposed approach is based on modeling the potential function associated with each clique shape of the GMRF model as a Gaussian-shaped kernel. In turn, the energy function of the GMRF will be in the form of a weighted sum of Gaussian kernels. This formulation of the GMRF model urges the use of the SVM with the Mean Field theory applied for its learning for estimating the energy function. The approach has been tested on synthetic texture images and is shown to provide satisfactory results in retrieving the synthesizing parameters.

Keywords: Image Modeling, MRF, Parameters Estimation, SVM Learning.

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6364 Improvement of Ventilation and Thermal Comfort Using the Atrium Design for Traditional Folk Houses-Fujian Earthen Building

Authors: Ying-Ming Su

Abstract:

Fujian earthen building which was known as a classic for ecological buildings was listed on the world heritage in 2008 (UNESCO) in China. Its design strategy can be applied to modern architecture planning and design. This study chose two different cases (Round Atrium: Er-Yi Building, Double Round Atrium: Zhen-Chen Building) of earthen building in Fu-Jian to compare the ventilation effects of different atrium forms. We adopt field measurements and computational fluid dynamics (CFD) simulation of temperature, humidity, and wind environment to identify the relationship between external environment and atrium about comfort and to confirm the relationship about atrium H/W (height/width). Results indicate that, through the atrium convection effect, it makes the natural wind guides to each space surrounded and keeps indoor comfort. It illustrates that the smaller the ratio of the H/W which is the relationship between the height and the width of an atrium is, the greater the wind speed generated within the street valley. Moreover, the wind speed is very close to the reference wind speed. This field measurement verifies that the value of H/W has great influence of solar radiation heat and sunshine shadows. The ventilation efficiency is: Er-Yi Building (H/W =0.2778) > Zhen-Chen Building (H/W=0.3670). Comparing the cases with the same shape but with different H/W, through the different size patios, airflow revolves in the atriums and can be brought into each interior space. The atrium settings meet the need of building ventilation, and can adjust the humidity and temperature within the buildings. It also creates good ventilation effect.

Keywords: Traditional folk houses, Atrium, Earthen building, Ventilation, Building microclimate, PET.

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6363 Radiation Effect on MHD Casson Fluid Flow over a Power-Law Stretching Sheet with Chemical Reaction

Authors: Motahar Reza, Rajni Chahal, Neha Sharma

Abstract:

This article addresses the boundary layer flow and heat transfer of Casson fluid over a nonlinearly permeable stretching surface with chemical reaction in the presence of variable magnetic field. The effect of thermal radiation is considered to control the rate of heat transfer at the surface. Using similarity transformations, the governing partial differential equations of this problem are reduced into a set of non-linear ordinary differential equations which are solved by finite difference method. It is observed that the velocity at fixed point decreases with increasing the nonlinear stretching parameter but the temperature increases with nonlinear stretching parameter.

Keywords: Boundary layer flow, nonlinear stretching, Casson fluid, heat transfer, radiation.

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6362 The Relationship between the Disposition Effect and Herding Behavior: Evidence from Taiwan’s Information Technology Stocks

Authors: Chih-Hsiang Chang

Abstract:

This study aims to explore the relationship between the disposition effect and herding behavior of investors trading Taiwanese information technology stocks. This study differs from previous literature in two aspects. First, in contrast with the earlier studies that focused on investigating investors’ herding behavior, this study explores the possibility that the disposition effect drives investors’ herding behavior. Additionally, it takes an in-depth look at the interdependence between the disposition effect and herding behavior of investors, including lead-lag relationship and volatility transmission effect. Empirical results show that investors trading Taiwan’s information technology stocks exhibit pronounced herding behavior and that the disposition effect has a great impact on their herding behavior.

Keywords: Herding behavior, Disposition effect, Behavioral finance.

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6361 The Causation and Solution of Ringing Effect in DCT-based Video Coding

Authors: Yu Yuan, David Feng, Yu-Zhuo Zhong

Abstract:

Ringing effect is one of the most annoying visual artifacts in digital video. It is a significant factor of subjective quality deterioration. However, there is a widely-accepted misunderstanding of its cause. In this paper, we propose a reasonable interpretation of the cause of ringing effect. Based on the interpretation, we suggest further two methods to reduce ringing effect in DCT-based video coding. The methods adaptively adjust quantizers according to video features. Our experiments proved that the methods could efficiently improve subjective quality with acceptable additional computing costs.

Keywords: ringing effect, video coding, subjective quality, DCT.

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6360 A Modern Review of the Spintronic Technology: Fundamentals, Materials, Devices, Circuits, Challenges, and Current Research Trends

Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

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6359 The Light Response Characteristics of Oxide-Based Thin Film Transistors

Authors: Soo-Yeon Lee, Seung-Min Song, Moon-Kyu Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han

Abstract:

We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Keywords: thin film transistor, oxide-based semiconductor, lightresponse

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6358 High Efficiency Class-F Power Amplifier Design

Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.

An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), Gallium Nitride (GaN), Agilent’s Advanced Design system (ADS) and lumped elements.

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6357 Collective Oscillations in a Magnetized Plasma Subjected to a Radiation Field

Authors: Daniel Santos, Bruno Ribeiro, Marco Amato, Antonio Fonseca

Abstract:

In this paper we discuss the behaviour of the longitudinal modes of a magnetized non collisional plasma subjected to an external electromagnetic field. We apply a semiclassical formalism, with the electrons being studied in a quantum mechanical viewpoint whereas the electromagnetic field in the classical context. We calculate the dielectric function in order to obtains the modes and found that, unlike the Bernstein modes, the presence of radiation induces oscillations around the cyclotron harmonics, which are smoothed as the energy stored in the radiation field becomes small compared to the thermal energy of the electrons. We analyze the influence of the number of photon involved in the electronic transitions between the Landau levels and how the parameters such as the external fields strength, plasma density and temperature affect the dispersion relation

Keywords: Collective oscillations, External fields, Dispersion relation.

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6356 High-Intensity Nanosecond Pulsed Electric Field effects on Early Physiological Development in Arabidopsis thaliana

Authors: Wisuwat Songnuan, Phumin Kirawanich

Abstract:

The influences of pulsed electric fields on early physiological development in Arabidopsis thaliana were studied. Inside a 4-mm electroporation cuvette, pre-germination seeds were subjected to high-intensity, nanosecond electrical pulses generated using laboratory-assembled pulsed electric field system. The field strength was varied from 5 to 20 kV.cm-1 and the pulse width and the pulse number were maintained at 10 ns and 100, respectively, corresponding to the specific treatment energy from 300 J.kg-1 to 4.5 kJ.kg-1. Statistical analyses on the average leaf area 5 and 15 days following pulsed electric field treatment showed that the effects appear significant the second week after treatments with a maximum increase of 80% compared to the control (P < 0.01).

Keywords: Arabidopsis thaliana, full-wave analysis, leaf area, high-intensity nanosecond pulsed electric fields

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