Search results for: semiconductor lasers
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 464

Search results for: semiconductor lasers

164 TiO2 Adsorbed on Cement Balls for Effective Photomineralization of Organic Pollutants under UV Light Irradiation

Authors: Tarun Jain, Lovnish Gupta, Soumen Basu

Abstract:

Organic pollutants like phenols and organic dyes present in industrial waste water are posing a hazardous threat to aquatic ecosystem. Several measures have been adopted for the neutralization and photodecomposition of these harmful organic moieties, among these semiconductor photocatalysis has been provided a major thrust after the discovery of Honda-Fujishema effect. Present study demonstrates the adsorption of TiO2- P25 in nano size (~36 nm) on cement balls for effective photodegradation of Alizarin and penta chlorophenol (PCP) under UV light illumination. Triton-X was used as a stabilizer for effective adsorption of TiO2 on cement balls (TCB) followed by calcination at ~300oC for 4 h. The TCB’s were dispersed randomly in a self designed reactor for phototcatalytic performance as shown in scheme 1. The change in concentration of alizarin and PCP was observed under UV-Vis spectroscopy, PCP was detoxified within 40 min while alizarin photodecomposed within 15 min of UV light irradiation. Taking into consideration the go green slogan and future prospective this technique can be also utilized under visible light and on mass scale because this is an effective tool for environmental remediation and waste water treatment.

Keywords: organic pollutants, TiO2 cement balls, photodegradation, UV light irradiation

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163 Fabrication of Hollow Germanium Spheres by Dropping Method

Authors: Kunal D. Bhagat, Truong V. Vu, John C. Wells, Hideyuki Takakura, Yu Kawano, Fumio Ogawa

Abstract:

Hollow germanium alloy quasi-spheres of diameters 1 to 2 mm with a relatively smooth inner and outer surface have been produced. The germanium was first melted at around 1273 K and then exuded from a coaxial nozzle into an inert atmosphere by argon gas supplied to the inner nozzle. The falling spheres were cooled by water spray and collected in a bucket. The spheres had a horn type of structure on the outer surface, which might be caused by volume expansion induced by the density difference between solid and gas phase. The frequency of the sphere formation was determined from the videos to be about 133 Hz. The outer diameter varied in the range of 1.3 to 1.8 mm with a wall thickness in the range of 0.2 to 0.5 mm. Solid silicon spheres are used for spherical silicon solar cells (S₃CS), which have various attractive features. Hollow S₃CS promise substantially higher energy conversion efficiency if their wall thickness can be kept to 0.1–0.2 mm and the inner surface can be passivated. Our production of hollow germanium spheres is a significant step towards the production of hollow S₃CS with, we hope, higher efficiency and lower material cost than solid S₃CS.

Keywords: hollow spheres, semiconductor, compound jet, dropping method

Procedia PDF Downloads 178
162 The Investigation of the Impact of Process and Location Parameters in Warpage Study of Semiconductor Packages

Authors: Wheyming Song, Ssu-Ping Lin

Abstract:

The primary advantage of package-on-package (PoP) packaging is that since it has less volume, it weighs less. But this is also related to its principal drawback, which is warpage. This research investigates how PoP package warpage patterns are affected by assembling process parameters, including substrate temperature, injection speed, injection temperature, and compound forces. We also investigate how warpage patterns are affected by the location of the silicon chip. The methodologies used in this research are design of experiment and warpage simulation via ANSYS. We propose a regression model to predict the warpage value as a function of substrate temperature, injection speed, injection temperature, and compound forces. Our results show that interaction effects exist between substrate temperature and compound forces and between injection speed and injection temperature. Therefore, determining the optimal values for substrate temperature, compound forces, injection speed, and injection temperature cannot be done individually. Also, our results show that the warpage patterns based on the location of silicon chips can be classified into 11 groups, with the largest warpage occurring at the left-most and right-most sides.

Keywords: package-on-package, warpage, design of experiment, simulation

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161 Rare-Earth Ions Doped Zirconium Oxide Layers for Optical and Photovoltaic Applications

Authors: Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Marek Godlewski

Abstract:

Oxide layers doped with rare-earth (RE) ions in optimized way can absorb short (ultraviolet light), which will be converted to visible light by so-called down-conversion. Down-conversion mechanisms are usually exploited to modify the incident solar spectrum. In down conversion, multiple low-energy photons are generated to exploit the energy of one incident high-energy photon. These RE-doped oxide materials have attracted a great deal of attention from researchers because of their potential for optical manipulation in optical devices (detectors, temperature sensors, and compact solid-state lasers, light-emitting diodes), bio-analysis, medical therapy, display technologies, and light harvesting (such as in photovoltaic cells). The zirconium dioxide (ZrO2) doped RE ions (Eu, Tb, Ce) multilayer structures were tested as active layers, which can convert short wave emission to light in the visible range (the down-conversion mechanism). For these applications original approach of deposition ZrO2 layers using the Atomic Layer Deposition (ALD) method and doping these layers with RE ions using the spin-coating technique was used. ALD films are deposited at relatively low temperature (well below 250°C). This can be an effective method to achieve the white-light emission and to improve on this way light conversion efficiency, by an extension of absorbed spectral range by a solar cell material. Photoluminescence (PL), X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM) measurement are analyzed. The research was financially supported by the National Science Centre (decision No. DEC-2012/06/A/ST7/00398 and DEC- 2013/09/N/ST5/00901).

Keywords: ALD, oxide layers, photovoltaics, thin films

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160 A Compact Extended Laser Diode Cavity Centered at 780 nm for Use in High-Resolution Laser Spectroscopy

Authors: J. Alvarez, J. Pimienta, R. Sarmiento

Abstract:

Diode lasers working in free mode present different shifting and broadening determined by external factors such as temperature, current or mechanical vibrations, and they are not more useful in applications such as spectroscopy, metrology, and cooling of atoms, among others. Different configurations can reduce the spectral width of a laser; one of the most effective is to extend the optical resonator of the laser diode and use optical feedback either with the help of a partially reflective mirror or with a diffraction grating; this latter configuration is not only allowed to reduce the spectral width of the laser line but also to coarsely adjust its working wavelength, within a wide range typically ~ 10nm by slightly varying the angle of the diffraction grating. Two settings are commonly used for this purpose, the Littrow configuration and the Littmann Metcalf. In this paper, we present the design, construction, and characterization of a compact extended laser cavity in Littrow configuration. The designed cavity is compact and was machined on an aluminum block using computer numerical control (CNC); it has a mass of only 380 g. The design was tested on laser diodes with different wavelengths, 650nm, 780nm, and 795 nm, but can be equally efficient at other wavelengths. This report details the results obtained from the extended cavity working at a wavelength of 780 nm, with an output power of around 35mW and a line width of less than 1Mhz. The cavity was used to observe the spectrum of the corresponding Rubidium D2 line. By modulating the current and with the help of phase detection techniques, a dispersion signal with an excellent signal-to-noise ratio was generated that allowed the stabilization of the laser to a transition of the hyperfine structure of Rubidium with an integral proportional controller (PI) circuit made with precision operational amplifiers.

Keywords: Littrow, Littman-Metcalf, line width, laser stabilization, hyperfine structure

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159 Polymer Solar Cells Synthesized with Copper Oxide Nanoparticles

Authors: Nidal H. Abu-Zahra, Aruna P. Wanninayake

Abstract:

Copper Oxide (CuO) is a p-type semiconductor with a band gap energy of 1.5 eV, this is close to the ideal energy gap of 1.4 eV required for solar cells to allow good solar spectral absorption. The inherent electrical characteristics of CuO nano particles make them attractive candidates for improving the performance of polymer solar cells when incorporated into the active polymer layer. The UV-visible absorption spectra and external quantum efficiency of P3HT/PC70BM solar cells containing different weight percentages of CuO nano particles showed a clear enhancement in the photo absorption of the active layer, this increased the power conversion efficiency of the solar cells by 24% in comparison to the reference cell. The short circuit current of the reference cell was found to be 5.234 mA/cm2 and it seemed to increase to 6.484 mA/cm2 in cells containing 0.6 mg of CuO NPs; in addition the fill factor increased from 61.15% to 68.0%, showing an enhancement of 11.2%. These observations suggest that the optimum concentration of CuO nano particles was 0.6 mg in the active layer. These significant findings can be applied to design high-efficiency polymer solar cells containing inorganic nano particles.

Keywords: copper oxide nanoparticle, UV-visible spectroscopy, polymer solar cells, P3HT/PCBM

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158 Synthesis and Properties of Poly(N-(sulfophenyl)aniline) Nanoflowers and Poly(N-(sulfophenyl)aniline) Nanofibers/Titanium dioxide Nanoparticles by Solid Phase Mechanochemical and Their Application in Hybrid Solar Cell

Authors: Mazaher Yarmohamadi-Vasel, Ali Reza Modarresi-Alama, Sahar Shabzendedara

Abstract:

Purpose/Objectives: The first purpose was synthesize Poly(N-(sulfophenyl)aniline) nanoflowers (PSANFLs) and Poly(N-(sulfophenyl)aniline) nanofibers/titanium dioxide nanoparticles ((PSANFs/TiO2NPs) by a solid-state mechano-chemical reaction and template-free method and use them in hybrid solar cell. Also, our second aim was to increase the solubility and the processability of conjugated nanomaterials in water through polar functionalized materials. poly[N-(4-sulfophenyl)aniline] is easily soluble in water because of the presence of polar groups of sulfonic acid in the polymer chain. Materials/Methods: Iron (III) chloride hexahydrate (FeCl3∙6H2O) were bought from Merck Millipore Company. Titanium oxide nanoparticles (TiO2, <20 nm, anatase) and Sodium diphenylamine-4-sulfonate (99%) were bought from Sigma-Aldrich Company. Titanium dioxide nanoparticles paste (PST-20T) was prepared from Sharifsolar Co. Conductive glasses coated with indium tin oxide (ITO) were bought from Xinyan Technology Co (China). For the first time we used the solid-state mechano-chemical reaction and template-free method to synthesize Poly(N-(sulfophenyl)aniline) nanoflowers. Moreover, for the first time we used the same technique to synthesize nanocomposite of Poly(N-(sulfophenyl)aniline) nanofibers and titanium dioxide nanoparticles (PSANFs/TiO2NPs) also for the first time this nanocomposite was synthesized. Examining the results of electrochemical calculations energy gap obtained by CV curves and UV–vis spectra demonstrate that PSANFs/TiO2NPs nanocomposite is a p-n type material that can be used in photovoltaic cells. Doctor blade method was used to creat films for three kinds of hybrid solar cells in terms of different patterns like ITO│TiO2NPs│Semiconductor sample│Al. In the following, hybrid photovoltaic cells in bilayer and bulk heterojunction structures were fabricated as ITO│TiO2NPs│PSANFLs│Al and ITO│TiO2NPs│PSANFs /TiO2NPs│Al, respectively. Fourier-transform infrared spectra, field emission scanning electron microscopy (FE-SEM), ultraviolet-visible spectra, cyclic voltammetry (CV) and electrical conductivity were the analysis that used to characterize the synthesized samples. Results and Conclusions: FE-SEM images clearly demonstrate that the morphology of the synthesized samples are nanostructured (nanoflowers and nanofibers). Electrochemical calculations of band gap from CV curves demonstrated that the forbidden band gap of the PSANFLs and PSANFs/TiO2NPs nanocomposite are 2.95 and 2.23 eV, respectively. I–V characteristics of hybrid solar cells and their power conversion efficiency (PCE) under 100 mWcm−2 irradiation (AM 1.5 global conditions) were measured that The PCE of the samples were 0.30 and 0.62%, respectively. At the end, all the results of solar cell analysis were discussed. To sum up, PSANFLs and PSANFLs/TiO2NPs were successfully synthesized by an affordable and straightforward mechanochemical reaction in solid-state under the green condition. The solubility and processability of the synthesized compounds have been improved compared to the previous work. We successfully fabricated hybrid photovoltaic cells of synthesized semiconductor nanostructured polymers and TiO2NPs as different architectures. We believe that the synthesized compounds can open inventive pathways for the development of other Poly(N-(sulfophenyl)aniline based hybrid materials (nanocomposites) proper for preparing new generation solar cells.

Keywords: mechanochemical synthesis, PSANFLs, PSANFs/TiO2NPs, solar cell

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157 Analysis of Vertical Hall Effect Device Using Current-Mode

Authors: Kim Jin Sup

Abstract:

This paper presents a vertical hall effect device using current-mode. Among different geometries that have been studied and simulated using COMSOL Multiphysics, optimized cross-shaped model displayed the best sensitivity. The cross-shaped model emerged as the optimum plate to fit the lowest noise and residual offset and the best sensitivity. The symmetrical cross-shaped hall plate is widely used because of its high sensitivity and immunity to alignment tolerances resulting from the fabrication process. The hall effect device has been designed using a 0.18-μm CMOS technology. The simulation uses the nominal bias current of 12μA. The applied magnetic field is from 0 mT to 20 mT. Simulation results achieved in COMSOL and validated with respect to the electrical behavior of equivalent circuit for Cadence. Simulation results of the one structure over the 13 available samples shows for the best geometry a current-mode sensitivity of 6.6 %/T at 20mT. Acknowledgment: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (No. R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device).

Keywords: vertical hall device, current-mode, crossed-shaped model, CMOS technology

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156 Uniform Porous Multilayer-Junction Thin Film for Enhanced Gas-Sensing Performance

Authors: Ping-Ping Zhang, Hui-Zhang, Xu-Hui Sun

Abstract:

Highly-uniform In2O3/CuO bilayer and multilayer porous thin films were successfully fabricated using self-assembled soft template and simple sputtering deposition technique. The sensor based on the In2O3/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at the lower working temperature, compared to single layer counterpart sensors. The response of In2O3/CuO bilayer sensors exhibits nearly 3 and 5 times higher than those of the single layer In2O3 and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on p-n hetero-junction, which contributed to the enhanced sensing performance was also experimentally confirmed by a control experiment which the SiO2 insulation layer was inserted between the In2O3 and CuO layers to break the p-n junction. In addition, the sensing performance can be further enhanced by increasing the number of In2O3/CuO junction layers. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors for practical sensing applications.

Keywords: gas sensor, multilayer porous thin films, In2O3/CuO, p-n junction

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155 Spectroscopic Studies of Dy³⁺ Ions in Alkaline-Earth Boro Tellurite Glasses for Optoelectronic Devices

Authors: K. Swapna

Abstract:

A Series of Alkali-Earth Boro Tellurite (AEBT) glasses doped with different concentrations of Dy³⁺ ions have been prepared by using melt quenching technique and characterized through spectroscopic techniques such as optical absorption, excitation, emission and photoluminescence decay to understand their utility in optoelectronic devices such as lasers and white light emitting diodes (w-LEDs). Raman spectrum recorded for an undoped glass is used to measure the phonon energy of the host glass and various functional groups present in the host glass (AEBT). The intensities of the electronic transitions and the ligand environment around the Dy³⁺ ions were studied by applying Judd-Ofelt (J-O) theory to the recorded absorption spectra of the glasses. The evaluated J-O parameters are subsequently used to measure various radiative parameters such as transition probability (AR), radiative branching ratio (βR) and radiative lifetimes (τR) for the prominent fluorescent levels of Dy³⁺ ions in the as-prepared glasses. The luminescence spectra recorded at 387 nm excitation show three emission transitions (⁴F9/2→⁶H15/2 (blue), ⁴F9/2→⁶H13/2 (yellow) and ⁴F9/2 → ⁶H11/2 (red)) of which the yellow transition observed at 575 nm is found to be highly intense. The experimental branching ratio (βexp) and stimulated emission crosssection (σse) were measured from luminescence spectra. The experimental lifetimes (τexp) measured from the decay spectral profiles are combined with radiative lifetimes to measure quantum efficiencies of the as-prepared glasses. The yellow to blue intensity ratios and chromaticity color coordinates are found to vary with Dy³⁺ ion concentrations. The aforementioned results reveal that these glasses are aptly suitable for w-LEDs and laser devices.

Keywords: glasses, J-O parameters, photoluminescence, I-H model

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154 Electronic Nose Based on Metal Oxide Semiconductor Sensors as an Alternative Technique for the Spoilage Classification of Oat Milk

Authors: A. Deswal, N. S. Deora, H. N. Mishra

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The aim of the present study was to develop a rapid method for electronic nose for online quality control of oat milk. Analysis by electronic nose and bacteriological measurements were performed to analyse spoilage kinetics of oat milk samples stored at room temperature and refrigerated conditions for up to 15 days. Principal component analysis (PCA), discriminant factorial analysis (DFA) and soft independent modelling by class analogy (SIMCA) classification techniques were used to differentiate the samples of oat milk at different days. The total plate count (bacteriological method) was selected as the reference method to consistently train the electronic nose system. The e-nose was able to differentiate between the oat milk samples of varying microbial load. The results obtained by the bacteria total viable counts showed that the shelf-life of oat milk stored at room temperature and refrigerated conditions were 20 hours and 13 days, respectively. The models built classified oat milk samples based on the total microbial population into “unspoiled” and “spoiled”.

Keywords: electronic-nose, bacteriological, shelf-life, classification

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153 Study of the Nonlinear Optic Properties of Thin Films of Europium Doped Zinc Oxide

Authors: Ali Ballouch, Nourelhouda Choukri, Zouhair Soufiani, Mohamed El Jouad, Mohamed Addou

Abstract:

For several years, significant research has been developed in the areas of applications of semiconductor wide bandgap such as ZnO in optoelectronics. This oxide has the advantage of having a large exciton energy (60 meV) three times higher than that of GaN (21 meV) or ZnS (20 meV). This energy makes zinc oxide resistant for laser irradiations and very interesting for the near UV-visible optic, as well as for studying physical microcavities. A high-energy direct gap at room temperature (Eg > 1 eV) which makes it a potential candidate for emitting devices in the near UV and visible. Our work is to study the nonlinear optical properties, mainly the nonlinear third-order susceptibility of europium doped Zinc oxide thin films. The samples were prepared by chemical vapor spray method (Spray), XRD, SEM technique, THG were used for characterization. In this context, the influence of europium doping on the nonlinear optical response of the Zinc oxide was investigated. The nonlinear third-order properties depend on the physico-chemical parameters (crystallinity, strain, and surface roughness), the nature and the level of doping, temperature.

Keywords: ZnO, characterization, non-linear optical properties, optoelectronics

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152 Synthesis and Characterization of Nickel and Sulphur Sensitized Zinc Oxide Structures

Authors: Ella C. Linganiso, Bonex W. Mwakikunga, Trilock Singh, Sanjay Mathur, Odireleng M. Ntwaeaborwa

Abstract:

The use of nanostructured semiconducting material to catalyze degradation of environmental pollutants still receives much attention to date. One of the desired characteristics for pollutant degradation under ultra-violet visible light is the materials with extended carrier charge separation that allows for electronic transfer between the catalyst and the pollutants. In this work, zinc oxide n-type semiconductor vertically aligned structures were fabricated on silicon (100) substrates using the chemical bath deposition method. The as-synthesized structures were treated with nickel and sulphur. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy were used to characterize the phase purity, structural dimensions and elemental composition of the obtained structures respectively. Photoluminescence emission measurements showed a decrease in both the near band edge emission as well as the defect band emission upon addition of nickel and sulphur with different concentrations. This was attributed to increased charger-carrier-separation due to the presence of Ni-S material on ZnO surface, which is linked to improved charge transfer during photocatalytic reactions.

Keywords: Carrier-charge-separation, nickel, photoluminescence, sulphur, zinc oxide

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151 Ge₁₋ₓSnₓ Alloys with Tuneable Energy Band Gap on GaAs (100) Substrate Manufactured by a Modified Magnetron Co-Sputtering

Authors: Li Qian, Jinchao Tong, Daohua Zhang, Weijun Fan, Fei Suo

Abstract:

Photonic applications based on group IV semiconductors have always been an interest but also a challenge for the research community. We report manufacturing group IV Ge₁₋ₓSnₓ alloys with tuneable energy band gap on (100) GaAs substrate by a modified radio frequency magnetron co-sputtering. Images were taken by atomic force microscope, and scanning electron microscope clearly demonstrates a smooth surface profile, and Ge₁₋ₓSnₓ nano clusters are with the size of several tens of nanometers. Transmittance spectra were measured by Fourier Transform Infrared Spectroscopy that showed changing energy gaps with the variation in elementary composition. Calculation results by 8-band k.p method are consistent with measured gaps. Our deposition system realized direct growth of Ge₁₋ₓSnₓ thin film on GaAs (100) substrate by sputtering. This simple deposition method was modified to be able to grow high-quality photonic materials with tuneable energy gaps. This work provides an alternative and successful method for fabricating Group IV photonic semiconductor materials.

Keywords: GeSn, crystal growth, sputtering, photonic

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150 Efficacy of TiO₂ in the Removal of an Acid Dye by Photo Catalytic Degradation

Authors: Laila Mahtout, Kerami Ahmed, Rabhi Souhila

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The objective of this work is to reduce the impact on the environment of an acid dye (Black Eriochrome T) using catalytic photo-degradation in the presence of the semiconductor powder (TiO₂) previously characterized. A series of tests have been carried out in order to demonstrate the influence of certain parameters on the degree of dye degradation by titanium dioxide in the presence of UV rays, such as contact time, the powder mass and the pH of the solution. X-ray diffraction analysis of the powder showed that the anatase structure is predominant and the rutile phase is presented by peaks of low intensity. The various chemical groups which characterize the presence of the bands corresponding to the anatase and rutile form and other chemical functions have been detected by the Fourier Transform Infrared spectroscopy. The photo degradation of the NET by TiO₂ is very interesting because it gives encouraging results. The study of photo-degradation at different concentrations of the dye showed that the lower concentrations give better removal rates. The degree of degradation of the dye increases with increasing pH; it reaches the maximum value at pH = 9. The ideal mass of TiO₂ which gives the high removal rate is 1.2 g/l. Thermal treatment of TiO₂ with the addition of CuO with contents of 5%, 10%, and 15% respectively gives better results of degradation of the NET dye. The high percentage of elimination is observed at a CuO content of 15%.

Keywords: acid dye, ultraviolet rays, degradation, photocatalyse

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149 A Study on Long Life Hybrid Battery System Consists of Ni-63 Betavoltaic Battery and All Solid Battery

Authors: Bosung Kim, Youngmok Yun, Sungho Lee, Chanseok Park

Abstract:

There is a limitation to power supply and operation by the chemical or physical battery in the space environment. Therefore, research for utilizing nuclear energy in the universe has been in progress since the 1950s, around the major industrialized countries. In this study, the self-rechargeable battery having a long life relative to the half-life of the radioisotope is suggested. The hybrid system is composed of betavoltaic battery, all solid battery and energy harvesting board. Betavoltaic battery can produce electrical power at least 10 years over using the radioisotope from Ni-63 and the silicon-based semiconductor. The electrical power generated from the betavoltaic battery is stored in the all-solid battery and stored power is used if necessary. The hybrid system board is composed of input terminals, boost circuit, charging terminals and output terminals. Betavoltaic and all solid batteries are connected to the input and output terminal, respectively. The electric current of 10 µA is applied to the system board by using the high-resolution power simulator. The system efficiencies are measured from a boost up voltage of 1.8 V, 2.4 V and 3 V, respectively. As a result, the efficiency of system board is about 75% after boosting up the voltage from 1V to 3V.

Keywords: isotope, betavoltaic, nuclear, battery, energy harvesting

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148 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

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A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors

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147 FTIR and AFM Properties of Doubly Doped Tin Oxide Thin Films Prepared by Spin Coating Technique

Authors: Bahattin Duzgun, Adem Kocyigit, Demet Tatar, Ahmet Battal

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Tin oxide thin films are semiconductor materials highly transparent and with high mechanical and chemical stability, except for their interactions with oxygen atoms at high temperature. Many dopants, such as antimony (Sb), arsenic (As), fluorine (F), indium (In), molybdenum and (Mo) etc. have been used to improve the electrical properties of tin oxide films. Among these, Sb and F are found to be the most commonly used dopants for solar cell layers. Also Tin oxide tin films investigated and characterized by researchers different film deposition and analysis method. In this study, tin oxide thin films are deposited on glass substrate by spin coating technique and characterized by FTIR and AFM. FTIR spectroscopy revealed that all films have O-Sn-O and Sn-OH vibration bonds not changing with layer effect. AFM analysis indicates that all films are homogeneity and uniform. It can be seen that all films have needle shape structure in their surfaces. Uniformity and homogeneity of the films generally increased for increasing layers. The results found in present study showed that doubly doped SnO2 thin films is a good candidate for solar cells and other optoelectronic and technological applications.

Keywords: doubly doped, spin coating, FTIR analysis, AFM analysis

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146 Optimizing Power in Sequential Circuits by Reducing Leakage Current Using Enhanced Multi Threshold CMOS

Authors: Patikineti Sreenivasulu, K. srinivasa Rao, A. Vinaya Babu

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The demand for portability, performance and high functional integration density of digital devices leads to the scaling of complementary metal oxide semiconductor (CMOS) devices inevitable. The increase in power consumption, coupled with the increasing demand for portable/hand-held electronics, has made power consumption a dominant concern in the design of VLSI circuits today. MTCMOS technology provides low leakage and high performance operation by utilizing high speed, low Vt (LVT) transistors for logic cells and low leakage, high Vt (HVT) devices as sleep transistors. Sleep transistors disconnect logic cells from the supply and/or ground to reduce the leakage in the sleep mode. In this technology, energy consumption while doing the mode transition and minimum time required to turn ON the circuit upon receiving the wake up signal are issues to be considered because these can adversely impact the performance of VLSI circuit. In this paper we are introducing an enhancing method of MTCMOS technology to optimize the power in MTCMOS sequential circuits.

Keywords: power consumption, ultra-low power, leakage, sub threshold, MTCMOS

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145 Preparation and Sealing of Polymer Microchannels Using EB Lithography and Laser Welding

Authors: Ian Jones, Jonathan Griffiths

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Laser welding offers the potential for making very precise joints in plastics products, both in terms of the joint location and the amount of heating applied. These methods have allowed the production of complex products such as microfluidic devices where channels and structure resolution below 100 µm is regularly used. However, to date, the dimension of welds made using lasers has been limited by the focus spot size that is achievable from the laser source. Theoretically, the minimum spot size possible from a laser is comparable to the wavelength of the radiation emitted. Practically, with reasonable focal length optics the spot size achievable is a few factors larger than this, and the melt zone in a plastics weld is larger again than this. The narrowest welds feasible to date have therefore been 10-20 µm wide using a near-infrared laser source. The aim of this work was to prepare laser absorber tracks and channels less than 10 µm wide in PMMA thermoplastic using EB lithography followed by sealing of channels using laser welding to carry out welds with widths of the order of 1 µm, below the resolution limit of the near-infrared laser used. Welded joints with a width of 1 µm have been achieved as well as channels with a width of 5 µm. The procedure was based on the principle of transmission laser welding using a thin coating of infrared absorbent material at the joint interface. The coating was patterned using electron-beam lithography to obtain the required resolution in a reproducible manner and that resolution was retained after the transmission laser welding process. The joint strength was ratified using larger scale samples. The results demonstrate that plastics products could be made with a high density of structure with resolution below 1 um, and that welding can be applied without excessively heating regions beyond the weld lines. This may be applied to smaller scale sensor and analysis chips, micro-bio and chemical reactors and to microelectronic packaging.

Keywords: microchannels, polymer, EB lithography, laser welding

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144 Noninvasive Continuous Glucose Monitoring Device Using a Photon-Assisted Tunneling Photodetector Based on a Quantum Metal-Oxide-Semiconductor

Authors: Wannakorn Sangthongngam, Melissa Huerta, Jaewoo Kim, Doyeon Kim

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Continuous glucose monitoring systems are essential for diabetics to avoid health complications but come at a costly price, especially when insurance does not fully cover the diabetic testing kits needed. This paper proposes a noninvasive continuous glucose monitoring system to provide an accessible, low-cost, and painless alternative method of accurate glucose measurements to help improve quality of life. Using a light source with a wavelength of 850nm illuminates the fingertip for the photodetector to detect the transmitted light. Utilizing SeeDevice’s photon-assisted tunneling photodetector (PAT-PD)-based QMOS™ sensor, fluctuations of voltage based on photon absorption in blood cells are comparable to traditional glucose measurements. The performance of the proposed method was validated using 4 test participants’ transmitted voltage readings compared with measurements obtained from the Accu-Chek glucometer. The proposed method was able to successfully measure concentrations from linear regression calculations.

Keywords: continuous glucose monitoring, non-invasive continuous glucose monitoring, NIR, photon-assisted tunneling photodetector, QMOS™, wearable device

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143 New Series Input Parallel Output LLC DC/DC Converter with the Input Voltage Balancing Capacitor for the Electric System of Electric Vehicles

Authors: Kang Hyun Yi

Abstract:

This paper presents a new parallel output LLC DC/DC converter for electric vehicle. The electric vehicle has two batteries. One is a high voltage battery for the powertrain of the vehicle and the other is a low voltage battery for the vehicle electric system. The low voltage is charged from the high voltage battery and the high voltage input and the high current output DC/DC converter is needed. Therefore, the new LLC converter with the input voltage compensation is proposed for the high voltage input and the low voltage output DC/DC converter. The proposed circuit has two LLC converters with the series input voltage from the battery for the powertrain and the parallel output low battery voltage for the vehicle electric system because the battery voltage for the powertrain and the electric power for the vehicle become high. Also, the input series voltage compensation capacitor is used for balancing the input current in the two LLC converters. The proposed converter has an equal electric stress of the semiconductor parts and the reactive components, high efficiency and good heat dissipation.

Keywords: electric vehicle, LLC DC/DC converter, input voltage balancing, parallel output

Procedia PDF Downloads 1021
142 Integrated Flavor Sensor Using Microbead Array

Authors: Ziba Omidi, Min-Ki Kim

Abstract:

This research presents the design, fabrication and application of a flavor sensor for an integrated electronic tongue and electronic nose that can allow rapid characterization of multi-component mixtures in a solution. The odor gas and liquid are separated using hydrophobic porous membrane in micro fluidic channel. The sensor uses an array composed of microbeads in micromachined cavities localized on silicon wafer. Sensing occurs via colorimetric and fluorescence changes to receptors and indicator molecules that are attached to termination sites on the polymeric microbeads. As a result, the sensor array system enables simultaneous and near-real-time analyses using small samples and reagent volumes with the capacity to incorporate significant redundancies. One of the key parts of the system is a passive pump driven only by capillary force. The hydrophilic surface of the fluidic structure draws the sample into the sensor array without any moving mechanical parts. Since there is no moving mechanical component in the structure, the size of the fluidic structure can be compact and the fabrication becomes simple when compared to the device including active microfluidic components. These factors should make the proposed system inexpensive to mass-produce, portable and compatible with biomedical applications.

Keywords: optical sensor, semiconductor manufacturing, smell sensor, taste sensor

Procedia PDF Downloads 412
141 Generation of Ultra-Broadband Supercontinuum Ultrashort Laser Pulses with High Energy

Authors: Walid Tawfik

Abstract:

The interaction of intense short nano- and picosecond laser pulses with plasma leads to reach variety of important applications, including time-resolved laser induced breakdown spectroscopy (LIBS), soft x-ray lasers, and laser-driven accelerators. The progress in generating of femtosecond down to sub-10 fs optical pulses has opened a door for scientists with an essential tool in many ultrafast phenomena, such as femto-chemistry, high field physics, and high harmonic generation (HHG). The advent of high-energy laser pulses with durations of few optical cycles provided scientists with very high electric fields, and produce coherent intense UV to NIR radiation with high energy which allows for the investigation of ultrafast molecular dynamics with femtosecond resolution. In this work, we could experimentally achieve the generation of a two-octave-wide supercontinuum ultrafast pulses extending from ultraviolet at 3.5 eV to the near-infrared at 1.3 eV in neon-filled capillary fiber. These pulses are created due to nonlinear self-phase modulation (SPM) in neon as a nonlinear medium. The measurements of the generated pulses were performed using spectral phase interferometry for direct electric-field reconstruction. A full characterization of the output pulses was studied. The output pulse characterization includes the pulse width, the beam profile, and the spectral bandwidth. Under optimization conditions, the reconstructed pulse intensity autocorrelation function was exposed for the shorts possible pulse duration to achieve transform-limited pulses with energies up to 600µJ. Furthermore, the effect of variation of neon pressure on the pulse-width was studied. The nonlinear SPM found to be increased with the neon pressure. The obtained results may give an opportunity to monitor and control ultrafast transit interaction in femtosecond chemistry.

Keywords: femtosecond laser, ultrafast, supercontinuum, ultra-broadband

Procedia PDF Downloads 184
140 Simultaneous Measurement of Displacement and Roll Angle of Object

Authors: R. Furutani, K. Ishii

Abstract:

Laser interferometers are now widely used for length and displacement measurement. In conventional methods, the optical path difference between two mirrors, one of which is a reference mirror and the other is a target mirror, is measured, as in Michelson interferometry, or two target mirrors are set up and the optical path difference between the two targets is measured, as in differential interferometry. In these interferometers, the two laser beams pass through different optical elements so that the measurement result is affected by the vibration and other effects in the optical paths. In addition, it is difficult to measure the roll angle around the optical axis. The proposed interferometer simultaneously measures both the translational motion along the optical axis and the roll motion around it by combining the retroreflective principle of the ball lens (BL) and the polarization. This interferometer detects the interferogram by the two beams traveling along the identical optical path from the beam source to BL. This principle is expected to reduce external influences by using the interferogram between the two lasers in an identical optical path. The proposed interferometer uses a BL so that the reflected light from the lens travels on the identical optical path as the incident light. After reaching the aperture of the He-Ne laser oscillator, the reflected light is reflected by a mirror with a very high reflectivity installed in the aperture and is irradiated back toward the BL. Both the first laser beam that enters the BL and the second laser beam that enters the BL after the round trip interferes with each other, enabling the measurement of displacement along the optical axis. In addition, for the measurement of the roll motion, a quarter-wave plate is installed on the optical path to change the polarization state of the laser. The polarization states of the first laser beam and second laser beam are different by the roll angle of the target. As a result, this system can measure the displacement and the roll angle of BL simultaneously. It was verified by the simulation and the experiment that the proposed optical system could measure the displacement and the roll angle simultaneously.

Keywords: common path interferometer, displacement measurement, laser interferometer, simultaneous measurement, roll angle measurement

Procedia PDF Downloads 53
139 Interplay of Power Management at Core and Server Level

Authors: Jörg Lenhardt, Wolfram Schiffmann, Jörg Keller

Abstract:

While the feature sizes of recent Complementary Metal Oxid Semiconductor (CMOS) devices decrease the influence of static power prevails their energy consumption. Thus, power savings that benefit from Dynamic Frequency and Voltage Scaling (DVFS) are diminishing and temporal shutdown of cores or other microchip components become more worthwhile. A consequence of powering off unused parts of a chip is that the relative difference between idle and fully loaded power consumption is increased. That means, future chips and whole server systems gain more power saving potential through power-aware load balancing, whereas in former times this power saving approach had only limited effect, and thus, was not widely adopted. While powering off complete servers was used to save energy, it will be superfluous in many cases when cores can be powered down. An important advantage that comes with that is a largely reduced time to respond to increased computational demand. We include the above developments in a server power model and quantify the advantage. Our conclusion is that strategies from datacenters when to power off server systems might be used in the future on core level, while load balancing mechanisms previously used at core level might be used in the future at server level.

Keywords: power efficiency, static power consumption, dynamic power consumption, CMOS

Procedia PDF Downloads 196
138 Preparation and Characterization of the TiO₂ Photocatalytic Membrane for the Degradation of Reactive Orange 16 Dye

Authors: Shruti Sakarkar, Jega Jegatheesan, Srinivasan Madapusi

Abstract:

Photocatalytic membranes have shown great potential for the removal of an organic and inorganic pollutant from wastewater as it combines the degradation and antibacterial properties from photocatalysis and physical separation by the membrane in a single unit. Incorporation of the semiconductor in membrane structure results in enhancing the performance and the properties of the membrane. In this study porous ultrafiltration polyvinylidene fluoride (PVDF) membranes with entrapped TiO₂ nanoparticle were prepared by phase inversion method and further used for the degradation of reactive orange 16 (RO16). Prepared photocatalytic membranes were characterized by the scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), contact angle, and atomic force microscope (AFM). The addition of TiO₂ nanopartparticles improves the strength and thermal stability of the membrane. In particular hydrophilicity and permeability increases with the increase of TiO₂ nanoparticles into the membrane. The photocatalytic membrane achieves 80-85% degrdation of RO16. The impact of different parameters such as pH, concentration of photocatalyst, dye concentration and effect of H₂O₂ were analysed. The best conditions for dye degradation were an initial dye concentration of 50 mg/L, with a membrane containing TiO₂ loading of 2wt%. It was observed that in the presence of H₂O₂, degradation increases with increasing H₂O₂ concentration and reached up to 95-98%. The high quality permeates obtained from the photocatalytic membrane can be reused.

Keywords: photocatalytic membrane, TiO₂, PVDF, nanoparticles

Procedia PDF Downloads 133
137 Characteristics of GaAs/InGaP and AlGaAs/GaAs/InAlGaP Npn Heterostructural Optoelectronic Switches

Authors: Der-Feng Guo

Abstract:

Optoelectronic switches have attracted a considerable attention in the semiconductor research field due to their potential applications in optical computing systems and optoelectronic integrated circuits (OEICs). With high gains and high-speed operations, npn heterostructures can be used to produce promising optoelectronic switches. It is known that the bulk barrier and heterostructure-induced potential spike act important roles in the characteristics of the npn heterostructures. To investigate the effects of bulk barrier and potential spike heights on the optoelectronic switching of the npn heterostructures, GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated in this work. It is seen that the illumination decreases the switching voltage Vs and increases the switching current Is, and thus the OFF state is under dark and ON state under illumination in the optical switching of the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS characteristics, the Vs and Is present contrary trends, and the OFF state is under illumination and ON state under dark. The studied HSOSs show quite different switching variations with incident light, which are mainly attributed to the bulk barrier and potential spike heights affected by photogenerated carriers.

Keywords: bulk barrier, heterostructure, optoelectronic switch, potential spike

Procedia PDF Downloads 212
136 Computational Determination of the Magneto Electronic Properties of Ce₁₋ₓCuₓO₂ (x=12.5%): Emerging Material for Spintronic Devices

Authors: Aicha Bouhlala, Sabah Chettibi

Abstract:

Doping CeO₂ with transition metals is an effective way of tuning its properties. In the present work, we have performed self-consistent ab-initio calculation using the full-potential linearized augmented plane-wave method (FP-LAPW), based on the density functional theory (DFT) as implemented in the Wien2k simulation code to study the structural, electronic, and magnetic properties of the compound Ce₁₋ₓCuₓO₂ (x=12.5%) fluorite type oxide and to explore the effects of dopant Cu in ceria. The exchange correlation potential has been treated using the Perdew-Burke-Eenzerhof revised of solid (PBEsol). In structural properties, the equilibrium lattice constant is observed for the compound, which exists within the value of 5.382 A°. In electronic properties, the spin-polarized electronic bandstructure elucidates the semiconductor nature of the material in both spin channels, with the compound was observed to have a narrow bandgap on the spin-down configuration (0.162 EV) and bandgap on the spin-up (2.067 EV). Hence, the doped atom Cu plays a vital role in increasing the magnetic moments of the supercell, and the value of the total magnetic moment is found to be 2.99438 μB. Therefore, the compound Cu-doped CeO₂ shows a strong ferromagnetic behavior. The predicted results propose the compound could be a good candidate for spintronics applications.

Keywords: Cu-doped CeO₂, DFT, Wien2k, properties

Procedia PDF Downloads 218
135 Design and Analysis of Adaptive Type-I Progressive Hybrid Censoring Plan under Step Stress Partially Accelerated Life Testing Using Competing Risk

Authors: Ariful Islam, Showkat Ahmad Lone

Abstract:

Statistical distributions have long been employed in the assessment of semiconductor devices and product reliability. The power function-distribution is one of the most important distributions in the modern reliability practice and can be frequently preferred over mathematically more complex distributions, such as the Weibull and the lognormal, because of its simplicity. Moreover, it may exhibit a better fit for failure data and provide more appropriate information about reliability and hazard rates in some circumstances. This study deals with estimating information about failure times of items under step-stress partially accelerated life tests for competing risk based on adoptive type-I progressive hybrid censoring criteria. The life data of the units under test is assumed to follow Mukherjee-Islam distribution. The point and interval maximum-likelihood estimations are obtained for distribution parameters and tampering coefficient. The performances of the resulting estimators of the developed model parameters are evaluated and investigated by using a simulation algorithm.

Keywords: adoptive progressive hybrid censoring, competing risk, mukherjee-islam distribution, partially accelerated life testing, simulation study

Procedia PDF Downloads 317