Search results for: optoelectronic switch

Authors: Der-Feng Guo

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Optoelectronic switches have attracted a considerable attention in the semiconductor research field due to their potential applications in optical computing systems and optoelectronic integrated circuits (OEICs). With high gains and high-speed operations, npn heterostructures can be used to produce promising optoelectronic switches. It is known that the bulk barrier and heterostructure-induced potential spike act important roles in the characteristics of the npn heterostructures. To investigate the effects of bulk barrier and potential spike heights on the optoelectronic switching of the npn heterostructures, GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated in this work. It is seen that the illumination decreases the switching voltage Vs and increases the switching current Is, and thus the OFF state is under dark and ON state under illumination in the optical switching of the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS characteristics, the Vs and Is present contrary trends, and the OFF state is under illumination and ON state under dark. The studied HSOSs show quite different switching variations with incident light, which are mainly attributed to the bulk barrier and potential spike heights affected by photogenerated carriers.

Keywords: bulk barrier, heterostructure, optoelectronic switch, potential spike

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Authors: Ki-Jin Kim, Suk-Hui LEE, Sanghoon Park, K. H. Ahn

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A high power, low loss asymmetric single pole double through(SPDT) antenna switch for LTE-A Front-End Module(FEM) is presented in this paper by using CMOS technology. For the usage of LTE-A applications, low loss and high linearity are the key features which are very challenging works under CMOS process. To enhance insertion loss(IL) and power handling capability, this paper adopts asymmetric Transmitter (TX) and RX (Receiver) structure, floating body technique, multi-stacked structure, and feed forward capacitor technique. The designed SPDT switch shows TX IL 0.34 dB, RX IL 0.73 dB, P1dB 38.9 dBm at 0.9 GHz and TX IL 0.37 dB, RX IL 0.95 dB, P1dB 39.1 dBm at 2.5 GHz respectively.

Keywords: CMOS switch, SPDT switch, high power CMOS switch, LTE-A FEM

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Authors: Mohammad Arif Sobhan Bhuiyan, Mamun Bin Ibne Reaz

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The rapid advancement of CMOS technology, in the recent years, has led the scientists to fabricate wireless transceivers fully on-chip which results in smaller size and lower cost wireless communication devices with acceptable performance characteristics. Moreover, the performance of the wireless transceivers rigorously depends on the performance of its first block T/R switch. This article proposes a design of a high performance T/R switch for 2.4 GHz RF wireless transceivers in 0.13 µm CMOS technology. The switch exhibits 1- dB insertion loss, 37.2-dB isolation in transmit mode and 1.4-dB insertion loss, 25.6-dB isolation in receive mode. The switch has a power handling capacity (P1dB) of 30.9-dBm. Besides, by avoiding bulky inductors and capacitors, the size of the switch is drastically reduced and it occupies only (0.00296) mm2 which is the lowest ever reported in this frequency band. Therefore, simplicity and low chip area of the circuit will trim down the cost of fabrication as well as the whole transceiver.

Keywords: CMOS, ISM band, SPDT, t/r switch, transceiver

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Authors: G. K. S. Prakash, Rao K. Srinivasa

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MEMS plays an important role in wide range of applications like biological, automobiles, military and communication engineering. This paper mainly investigates on capacitive shunt RF MEMS switch with low actuation voltage and low insertion losses. To trim the pull-in voltage, a step structure has introduced to trim air gap between the beam and the dielectric layer with that pull in voltage is trim to 2.9 V. The switching time of the proposed switch is 39.1μs, and capacitance ratio is 67. To get more isolation, we have used aluminum nitride as dielectric material instead of silicon nitride (Si₃N₄) and silicon dioxide (SiO₂) because aluminum nitride has high dielectric constant (εᵣ = 9.5) increases the OFF capacitance and eventually increases the isolation of the switch. The results show that the switch is ON state involves return loss (S₁₁) less than -25 dB up to 40 GHz and insertion loss (S₂₁) is more than -1 dB up to 35 GHz. In OFF state switch shows maximum isolation (S₂₁) of -38 dB occurs at a frequency of 25-27 GHz for K band applications.

Keywords: RF MEMS, actuation voltage, isolation loss, switches

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Authors: Mohamed Achehboune, Mohammed Khenfouch, Issam Boukhoubza, Bakang Mothudi, Izeddine Zorkani, Anouar Jorio

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Zinc Oxide (ZnO) nanostructures have been attracting growing interest in recent years; their optical and electrical properties make them useful as attractive and promising materials for optoelectronic applications. In this study, pure and Hafnium doped ZnO nanostructures were synthesized using a green processing method. The structural, optical and electrical properties of samples were investigated structural and optical spectroscopies and electrical measurements. The synthesis and chemical composition of pure and Hafnium doped ZnO were confirmed by SEM observation. The XRD studies of Hafnium doped ZnO demonstrate the formation of wurtzite structure with preferred c-axis orientation. Moreover, the optical and electrical properties of doped material have improved after the doping process. The experimental results obtained for our material show that Hf doped ZnO nanostructures could be a promising material in optoelectronic applications such as photovoltaic cell and light emitting diode devices.

Keywords: green synthesis, hafnium-doped-zinc oxide, nanostructures, optoelectronic

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Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

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A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: high voltage, IGBT, solid state switch, bipolar transistor

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Authors: B. Bouktif, M. Gaidi, M. Benrabha

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Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper.

Keywords: semiconductor nanostructure, chemical etching, optoelectronic property, silicon surface

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Authors: Issam Derkaoui, Mohammed Khenfouch, Bakang M. Mothudi, Malik Maaza, Izeddine Zorkani, Anouar Jorio

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Transition metal oxides nanoparticles with different morphologies have attracted a lot of attention recently owning to their distinctive geometries, and demonstrated promising electrical properties for various applications. In this paper, we discuss the time and annealing effects on the structural and electrical properties of vanadium oxides nanoparticles (VO-NPs) prepared by microwave method. In this sense, transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman Spectroscopy, Ultraviolet-visible absorbance spectra (Uv-Vis) and electrical conductivity were investigated. Hence, the annealing state and the time are two crucial parameters for the improvement of the optoelectronic properties. The use of these nanostructures is promising way for the development of technological applications especially for energy storage devices.

Keywords: Vanadium oxide, Microwave, Electrical conductivity, Optoelectronic properties

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Authors: B. Bouadjemia, M. Houaria, S. Haida, Y. B. Idriss, A, Akham, M. Matouguia, A. Gasmia, T. Lantria, S. Bentataa

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It have investigated the structural, optoelectronic, elastic and thermodynamic properties of KGeX₃ (X = F, Cl and Br) using the density functional theory (DFT) with generalized gradient approximation (GGA) for potential exchange correlation. The modified Becke-Johnson (mBJ-GGA) potential approximation is also used for calculating the optoelectronic properties of the material.The results show that the band structure of the metalloid halide perovskites KGeX₃ (X = F, Cl and Br) have a semiconductor behavior with direct band gap at R-R direction, the gap energy values for each compound as following: 2.83, 1.27 and 0.79eV respectively. The optical properties, such as real and imaginary parts of the dielectric functions, refractive index, reflectivity and absorption coefficient, are investigated. As results, these compounds are competent candidates for optoelectronic and photovoltaic devices in this range of the energy spectrum.

Keywords: density functional theory (DFT), semiconductor behavior, metalloid halide perovskites, optical propertie and photovoltaic devices

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Authors: Seyong Oh, Jin-Hong Park

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Recently, neuromorphic computing based on brain-inspired artificial neural networks (ANNs) has attracted huge amount of research interests due to the technological abilities to facilitate massively parallel, low-energy consuming, and event-driven computing. In particular, research on artificial synapse that imitate biological synapses responsible for human information processing and memory is in the spotlight. Here, we demonstrate a photosynaptic device, wherein a synaptic weight is governed by a mixed spike consisting of voltage and light spikes. Compared to the device operated only by the voltage spike, ∆G in the proposed photosynaptic device significantly increased from -2.32nS to 5.95nS with no degradation of nonlinearity (NL) (potentiation/depression values were changed from 4.24/8 to 5/8). Furthermore, the Modified National Institute of Standards and Technology (MNIST) digit pattern recognition rates improved from 36% and 49% to 50% and 62% in ANNs consisting of the synaptic devices with 20 and 100 weight states, respectively. We expect that the photosynaptic device technology processed by optoelectronic spike will play an important role in implementing the neuromorphic computing systems in the future.

Keywords: optoelectronic synapse, IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device, optoelectronic spiking process, neuromorphic computing

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Authors: Maamar Latroch, Mohamed Bourahla

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Forward topology used in switch mode power supply (SMPS) is one of the most famous configuration feeding DC systems such as telecommunication systems and other specific applications where the galvanic isolation is required. This configuration benefits of the high frequency feature of the transformer to provide a small size and light weight of the over all system. However, the stresses existing on the power switch during an ON/OFF commutation limit the transmitted power to the DC load. This paper investigates the main causes of the stresses in voltage existing during a commutation cycle and suggest a low cost solution that eliminates the overvoltage. As a result, this configuration will yield the possibility of the use of this configuration in higher power applications. Simulation results will show the efficiency of the presented method.

Keywords: switch mode power supply, forward topology, resonance topology, high frequency commutation

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Authors: Bentoutou Houari, Boutte Aissa, Belaidi El Yazid, Limam Lakhdar

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The integration of a load switch with a DC/DC buck converter using LM2596 for power distribution in low-cost educational nanosatellites is a technique that aims to efficiently manage the power distribution system in these small spacecraft. The converter is based on the LM2596 regulator and designed to step down the input voltage of +16.8V to +12V, +5V, and +3.3V output, which are suitable for the nanosatellite's various subsystems. The load switch is based on MOSFET and is used to turn on or off the power supply to a particular load and protect the nanosatellite from power surges. A prototype of a +12V DC/DC buck converter with a high side load switch has been realized and tested, which meets our requirements and shows a good efficiency of 89%. In addition, the prototype features a capacitor between the source and gate of the MOSFET, which has effectively reduced the inrush current, demonstrating the effectiveness of this approach in reducing surges of current when the load is connected. The output current and voltage were measured at 0.7A and 11.89V, respectively, making this design suitable for use in low-cost educational nanosatellites.

Keywords: DC/DC buck converter, load switch, LM2596, electrical power subsystems, nanosatellite, inrush current

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Authors: Jamie Wong, Daisy Sang, Chang-Shyh Peng

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Geofence is a virtual fence defined by a preset physical radius around a target location. Geofencing App provides location-based services which define the actionable operations upon the crossing of a geofence. Geofencing requires continual location tracking, which can consume noticeable amount of battery power. Additionally, location updates need to be frequent and accurate or order so that actions can be triggered within an expected time window after the mobile user navigate through the geofence. In this paper, we build an Android mobile geofencing Application to remotely and autonomously control a power switch.

Keywords: location based service, geofence, autonomous, remote switch

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Authors: H. Akhloufi, M. Hulscher, J. M. Prins, I. H. Van Der Sijs, D. Melles, A. Verbon

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Background: A timely switch from intravenous to oral antibiotic therapy has many advantages, such as reduced incidence of IV-line related infections, a decreased hospital length of stay and less workload for healthcare professionals with equivalent patient safety. Additionally, numerous studies have demonstrated significant decreases in costs of a timely intravenous to oral antibiotic therapy switch, while maintaining efficacy and safety. However, a considerable variation in iv to oral antibiotic switch therapy criteria has been described in literature. Here, we report the development of a set of iv to oral switch criteria that are generally applicable in all hospitals. Material/methods: A RAND-modified Delphi procedure, which was composed of 3 rounds, was used. This Delphi procedure is a widely used structured process to develop consensus using multiple rounds of questionnaires within a qualified panel of selected experts. The international expert panel was multidisciplinary and composed out of clinical microbiologists, infectious disease consultants and clinical pharmacists. This panel of 19 experts appraised 6 major intravenous to oral antibiotic switch therapy criteria and operationalized these criteria using 41 measurable conditions extracted from the literature. The procedure to select a concise set of iv to oral switch criteria included 2 questionnaire rounds and a face-to-face meeting. Results: The procedure resulted in the selection of 16 measurable conditions, which operationalize 6 major intravenous to oral antibiotic switch therapy criteria. The following 6 major switch therapy criteria were selected: (1) Vital signs should be good or improving when bad. (2) Signs and symptoms related to the infection have to be resolved or improved. (3) The gastrointestinal tract has to be intact and functioning. (4) The oral route should not be compromised. (5) Absence of contra-indicated infections. (6) An oral variant of the antibiotic with good bioavailability has to exist. Conclusions: This systematic stepwise method which combined evidence and expert opinion resulted in a feasible set of 6 major intravenous to oral antibiotic switch therapy criteria operationalized by 16 measurable conditions. This set of early antibiotic iv to oral switch criteria can be used in daily practice in all adult hospital patients. Future use in audits and as rules in computer assisted decision support systems will lead to improvement of antimicrobial steward ship programs.

Keywords: antibiotic resistance, antibiotic stewardship, intravenous to oral, switch therapy

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Authors: Ashkan Mirzay Fashami

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This study examines the effects of auditor switch, auditee’s industry, and auditee’s location on audit fees in Australia. It uses fee data of Australian Securities Exchange 500 companies, considering all industry classifications throughout the country from 2006 until 2016. Main findings show that auditor switch does not affect audit fees. However, auditee’s industry affects audit fees. This effect occurs in information technology, financials, energy, and materials sectors among the top 500 companies. Financials, energy, and materials sectors face a fee rise, whereas information technology has a fee cut. The extent of fee changes is different among various industries, wherein the financial sector has the highest increase. Further, auditee’s location affects audit fees. Top 500 companies in Hobart, Perth, and Brisbane face a fee reduction, wherein the highest cut is in Hobart. Further analysis suggests that the Australian audit market is being increasingly concentrated in the hands of the Big Four audit firms.

Keywords: audit, auditor switch, Australia, fee, low-balling

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Authors: Ashish Soni, Suman Kalyan Pal

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Transition metal dichalcogenides (TMDCs) are an emerging paradigm for the generation of advanced materials which are capable of utilizing in future device applications. In recent years TMDCs have attracted researchers for their unique band structure in monolayers. Large-area monolayers could become the most appropriate candidate for flexible and thin optoelectronic devices. For this purpose, it is crucial to understand the generation and transport of charge carriers in low dimensions. A deep understanding of photo-generated hot charges and trapped charges is essential to improve the performance of optoelectronic devices. Carrier trapping by the defect states that are introduced during the growth process of the monolayer could influence the dynamical behaviour of charge carriers. Herein, we investigated some aspects of the ultrafast evolution of the initially generated hot carriers and trapped charges in large-area monolayer WS₂ by measuring transient absorption at energies above and below the band gap energy. Our excitation density and energy-dependent measurements reveal the trapping of the initially generated charge carrier. Our results could be beneficial for the development of TMDC-based optoelectronic devices.

Keywords: transient absorption, optoelectronics, 2D materials, TMDCs, exciton

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Authors: B. Bouadjemi, S. Bentata, T. Lantri, Souidi Amel, W.Bensaali, A. Zitouni, Z. Aziz

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We performed first-principle calculations, the full-potential linearized augmented plane wave (FP-LAPW) method is used to calculate structural, optoelectronic and magnetic properties of cubic halide perovskites CsPbX3 (X= F,I). We employed for this study the GGA approach and for exchange is modeled using the modified Becke-Johnson (mBJ) potential to predicting the accurate band gap of these materials. The optical properties (namely: the real and imaginary parts of dielectric functions, optical conductivities and absorption coefficient absorption make this halide perovskites promising materials for solar cells applications.

Keywords: halide perovskites, mBJ, solar cells, FP-LAPW, optoelectronic properties, absorption coefficient

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Authors: Said Rabah Azzam, Andrew Graham

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Fragmentation of packets caused by encryption applied on the network layer of the IOS model in Internet Protocol version 4 (IPv4) networks as well as the possibility of using fragmentation and Access Control Lists (ACLs) as a method of restricting network access to certain hosts or areas of a network.Using default settings, fragmentation is expected to occur and each fragment to be reassembled at the other end. If this does not occur then a high number of ICMP messages should be generated back towards the source host indicating that the packet is too large and that it needs to be made smaller. This result is also expected when the MTU is changed for certain links between devices.When using ACLs and packet fragments to restrict access to hosts or network segments it is possible that ACLs cannot be set up in this way. If ACLs cannot be setup to allow only fragments then it is a limitation of the hardware’s firmware holding back this particular method. If the ACL on the restricted switch can be set up in such a way to allow only fragments then a connection that forces packets to fragment should be allowed to pass through the ACL. This should then make a network connection to the destination machine allowing data to be sent to and from the destination machine. ICMP messages from the restricted access switch and host should also be blocked from being sent back across the link which will be shown in an SSH session into the switch.

Keywords: fragmentation, encryption, security, switch

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Authors: Harmel Meriem

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The optoelectronic properties and high power conversion efficiency make lead halide perovskites ideal material for solar cell applications. However, the toxic nature of lead and the instability of organic cation are the two key challenges in the emerging perovskite solar cells. To overcome these challenges, we present our study about finding potential alternatives to lead in the form of A2BX6 perovskite using the first principles DFT-based calculations. The highly accurate modified Becke Johnson (mBJ) and hybrid functional (HSE06) have been used to investigate the Main Document Click here to view linked References to optoelectronic and thermoelectric properties of A2PdBr6 (A = K, Rb, and Cs) perovskite. The results indicate that different A-cations in A2PdBr6 can significantly alter their electronic and optical properties. Calculated band structures indicate semiconducting nature, with band gap values of 1.84, 1.53, and 1.54 eV for K2PdBr6, Rb2PdBr6, and Cs2PdBr6, respectively. We find strong optical absorption in the visible region with small effective masses for A2PdBr6. The ideal band gap and optimum light absorption suggest Rb2PdBr6 and Cs2PdBr6 potential candidates for the light absorption layer in perovskite solar cells. Additionally.

Keywords: soler cell, double perovskite, optoelectronic properties, ab-inotio study

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Authors: Sajjad Asefi, Hossein Afrakhte

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This paper presents the evaluation of reliability indices of an electrical distribution system using Monte Carlo simulation technique accounting Time To Switch (TTS) for each section. In this paper, the distribution system has been assumed by accounting random repair time omission. For simplicity, we have assumed the reliability analysis to be based on exponential law. Each segment has a specified rate of failure (λ) and repair time (r) which will give us the mean up time and mean down time of each section in distribution system. After calculating the modified mean up time (MUT) in years, mean down time (MDT) in hours and unavailability (U) in h/year, TTS have been added to the time which the system is not available, i.e. MDT. In this paper, we have assumed the TTS to be a random variable with Log-Normal distribution.

Keywords: distribution system, Monte Carlo simulation, reliability, repair time, time to switch (TTS)

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Authors: Abdullah Bal, Sevdenur Bal

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This paper purposes a new type of hardware application for training of cellular neural networks (CNN) using optical joint transform correlation (JTC) architecture for image feature extraction. CNNs require much more computation during the training stage compare to test process. Since optoelectronic hardware applications offer possibility of parallel high speed processing capability for 2D data processing applications, CNN training algorithm can be realized using Fourier optics technique. JTC employs lens and CCD cameras with laser beam that realize 2D matrix multiplication and summation in the light speed. Therefore, in the each iteration of training, JTC carries more computation burden inherently and the rest of mathematical computation realized digitally. The bipolar data is encoded by phase and summation of correlation operations is realized using multi-object input joint images. Overlapping properties of JTC are then utilized for summation of two cross-correlations which provide less computation possibility for training stage. Phase-only JTC does not require data rearrangement, electronic pre-calculation and strict system alignment. The proposed system can be incorporated simultaneously with various optical image processing or optical pattern recognition techniques just in the same optical system.

Keywords: CNN training, image processing, joint transform correlation, optoelectronic hardware

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Authors: Jade Martínez-Llinàs, Pere Colet

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By exploring the possible dynamical regimes in a prototypical model for mutually delay-coupled OEOs, here it is shown that two mutually coupled non-identical OEOs, besides in- and out-of-phase square-waves, can generate stable square-wave pulses synchronized at a quarter of the period (T/4) in a broad parameter region. The key point to obtain T/4 solutions is that the two OEO operate with mixed feedback, namely with negative feedback in one and positive in the other. Furthermore, the coexistence of multiple solutions provides a large degree of flexibility for tuning the frequency in the GHz range without changing any parameter. As a result the two coupled OEOs system is good candidate to be implemented for information encoding as a high-capacity memory device.

Keywords: nonlinear optics, optoelectronic oscillators, square waves, synchronization

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Authors: M. Zyczkowski, P. Markowski, M. Karol

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The team from IOE MUT is developing fiber optic sensors for the security systems for 15 years. The conclusions of the work indicate that these sensors are complicated. Moreover, these sensors are expensive to produce and require sophisticated signal processing methods.We present the results of the investigations of three different applications of the modalmetric sensor: • Protection of museum collections and heritage buildings, • Protection of fiber optic transmission lines, • Protection of objects of critical infrastructure. Each of the presented applications involves different requirements for the system. The results indicate that it is possible to developed a fiber optic sensor based on a single fiber. Modification of optoelectronic parts with a change of the length of the sensor and the method of reflections of propagating light at the end of the sensor allows to adjust the system to the specific application.

Keywords: modalmetric fiber optic sensor, security sensor, optoelectronic parts, signal processing

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Authors: Ahmed Raza Khan

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Local-strain engineering is an exciting approach to tune the optoelectronic properties of materials and enhance the performance of devices. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDCs) are particularly well-suited for this purpose because they have high flexibility and can withstand high deformations before rupture. Wrinkles on thick TMDC layers have been reported to show the interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDCs have not been investigated, because the wrinkles can easily fall down to form folds in these ultrathin layers of TMDCs. Here, we have achieved both wrinkle and fold nano-structures simultaneously on 1-3L WS₂ using a new fabrication technique. The comparable layer dependent reduction in surface potential is observed for both folded layers and corresponding perfect pack layers due to the dominant interlayer screening effect. The strains produced from the wrinkle nanostructures considerably vary semi conductive junction properties. Thermo-ionic modelling suggests that the strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. The photo-generated carriers would further significantly lower the SBH. These results present an important advance towards controlling the optoelectronic properties of atomically thin WS₂ using strain engineering, with important implications for practical device applications.

Keywords: strain engineering, folding, WS₂, Kelvin probe force microscopy, KPFM, surface potential, photo current, layer dependence

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Authors: Arslan Usman, Abdul Sattar, Hamid Latif, Afshan Ashfaq, Muhammad Rafique, Martin Koch

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Two-dimensional materials have promising applications in optoelectronic and photonics; MoS₂ is the pioneer 2D material in the family of transition metal dichalcogenides. Its optical, optoelectronic, and structural properties are of practical importance along with its exciton dynamics. Exciton, along with exciton complexes, plays a vital role in realizing quantum devices. MoS₂ monolayers were synthesized using chemical vapour deposition (CVD) technique on SiO₂ and hBN substrates. Photoluminescence spectroscopy (PL) was used to identify the monolayer, which also reflects the substrate based peak broadening due to screening effects. In-plane and out of plane characteristic vibrational modes E¹₂g and A₁g, respectively, were detected in a different configuration on the substrate. The B-excitons and trions showed a dominant feature at low temperatures due to electron-phonon coupling effects, whereas their energies are separated by 100 meV.

Keywords: 2D materials, photoluminescence, AFM, excitons

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Authors: El Hadi Bouguerra, Nouredine Retiel

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To avoid or at least to attenuate the global warming, it is essential to reduce the energy consumption of the buildings where the biggest potential of savings exists. The impending danger can come from the increase in the needs of air conditioning not only because of the climate warming but also the fast equipping of emerging or developing countries. Passive solutions exist and others are in promising development and therefore, must be applied wherever it is possible. Even if they do not always avoid the resort to an active cooling (mechanical), they allow lowering the load at an acceptable level which can be possibly taken in relay by the renewable energies. These solutions have the advantage to be relatively less expensive and especially adaptable to the existing housing. However, it is the internal convection resistance that controls the heat exchange between the phase change materials (PCM) and the indoor temperature because of the very low heat coefficients of natural convection. Therefore, it is reasonable to link the switch temperature Tm to the temperature of the substrate (walls and ceiling) because conduction heat transfer is dominant. In this case, external conditions (heat sources such as solar irradiation and ambient temperatures) and conductivities of envelope constituents are the most important factors. The walls are not at the same temperature year round; therefore, it is difficult to set a unique switch temperature for the whole season, making the average values a key parameter. With this work, the authors’ aim is to see which parameters influence the optimum switch temperature of a PCM and additionally, if a better selection of PCMs relating to their optimum temperature can enhance their energetic performances.

Keywords: low energy building, energy conservation, phase change materials, PCM

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Authors: Melissa Chavez Portillo, Hector Juarez Santiesteban, Mauricio Pacio Castillo, Oscar Portillo Moreno

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Nanocrystalline Li-doped PbS thin films have been deposited by chemical bath deposition technique. The goal of this work is to study the modification of the optoelectronic and structural properties of Lithium incorporation. The increase of Li doping in PbS thin films leads to an increase of band gap in the range of 1.4-2.3, consequently, quantum size effect becomes pronounced in the Li-doped PbS films, which lead to a significant enhancement in the optical band gap. Doping shows influence in the film growth and results in a reduction of crystallite size from 30 to 14 nm. The refractive index was calculated and a relationship with dielectric constant was investigated. The dc conductivities of Li-doped and undoped samples were measured in the temperature range 290-340K, the conductivity increase with increase of Lithium content in the PbS films.

Keywords: doping, quantum confinement, optical band gap, PbS

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Authors: Petr Vaculik

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The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber

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Authors: V. Nagammai

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Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining thousands of transistors into a single chip. Development of technology increases the complexity in IC manufacturing which may vary the power consumption, increase the size and latency period. Topology defines a number of connections between network. In this project, NoC topology is generated using atlas tool which will increase performance in turn determination of constraints are effective. The routing is performed by XY routing algorithm and wormhole flow control. In NoC topology generation, the value of power, area and latency are predetermined. In previous work, placement, routing and shortest path evaluation is performed using an algorithm called floor planning with cluster reconstruction and path allocation algorithm (FCRPA) with the account of 4 3x3 switch, 6 4x4 switch, and 2 5x5 switches. The usage of the 4x4 and 5x5 switch will increase the power consumption and area of the block. In order to avoid the problem, this paper has used one 8x8 switch and 4 3x3 switches. This paper uses IPRCA which of 3 steps they are placement, clustering, and shortest path evaluation. The placement is performed using min – cut placement and clustering are performed using an algorithm called cluster generation. The shortest path is evaluated using an algorithm called Dijkstra's algorithm. The power consumption of each block is determined. The experimental result shows that the area, power, and wire length improved simultaneously.

Keywords: application specific noc, b* tree representation, floor planning, t tree representation

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Authors: M. Kaouane, A. Boukhelifa, A. Cheriti

Abstract:

In this paper, a new Buck-Boost DC-DC converter is designed and simulated for photovoltaic energy system. The presented Buck-Boost converter has a double switch. Moreover, its output voltage is regulated to a constant value whatever its input is. In the presented work, the Buck-Boost transfers the produced energy from the photovoltaic generator to an R-L load. The converter is controlled by the pulse width modulation technique in a way to have a suitable output voltage, in the other hand, to carry the generator’s power, and put it close to the maximum possible power that can be generated by introducing the right duty cycle of the pulse width modulation signals that control the switches of the converter; each component and each parameter of the proposed circuit is well calculated using the equations that describe each operating mode of the converter. The proposed configuration of Buck-Boost converter has been simulated in Matlab/Simulink environment; the simulation results show that it is a good choice to take in order to maintain the output voltage constant while ensuring a good energy transfer.

Keywords: Buck-Boost converter, switch, photovoltaic, PWM, power, energy transfer

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