Search results for: wide band gap semiconductor.

Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

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A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

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Authors: Inderpreet Kaur, Neena Gupta

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Wavelength multiplexing (WDM) technology along with optical amplifiers is used for optical communication systems in S-band, C-band and L-band. To improve the overall system performance Hybrid amplifiers consisting of cascaded TDFA and EDFA with different gain bandwidths are preferred for long haul wavelength multiplexed optical communication systems. This paper deals with statistical analysis of different configuration of hybrid amplifier i.e. analysis of TDFA-EDFA configuration and EDFA – TDFA configuration. In this paper One-Way ANOVA method is used for statistical analysis.

Keywords: WDM, EDFA, TDFA, hybrid amplifier, One-wayANOVA.

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Authors: D. P. Clayton, E. A. Ball

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This paper describes an investigation into the isolation characteristics and bandwidth performance of radio frequency (RF) combiners that are used as part of Chireix power amplifier (PA) architectures, designed for use in the X-Band range of frequencies. Combiner designs investigated are the typical Chireix and Wilkinson configurations which also include simulation of the Wilkinson using manufacturer’s data for the isolation resistor. Another simulation was the less common approach of using a Branchline coupler to form the combiner, as well as simulation results from adding an additional stage. This paper presents the findings of this investigation and compares the bandwidth performance and isolation characteristics to determine suitability.

Keywords: Bandwidth, Chireix, couplers, outphasing, power amplifiers, Wilkinson, X-Band.

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Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

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This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: Finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier.

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Authors: Bachir Chemani, Rachid Halfaoui, Madani Maalem

Abstract:

The manufacturing technology of band cotton is very delicate and depends to choice of certain parameters such as torsion of warp yarn. The fabric elasticity is achieved without the use of any elastic material, chemical expansion, artificial or synthetic and it’s capable of creating pressures useful for therapeutic treatments. Before use, the band is subjected to treatments of specific preparation for obtaining certain elasticity, however, during its treatment, there are some regression parameters. The dependence of manufacturing parameters on the quality of the chemical treatment was confirmed. The aim of this work is to improve the properties of the fabric through the development of manufacturing technology appropriately. Finally for the treatment of the strip pancake 100% cotton, a treatment method is recommended.

Keywords: Elastic, cotton, processing, torsion.

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Authors: Dil Nawaz Khan, M. H. Sayyad, Muhammad Yaseen, Munawar Ali Munawar, Mukhtar Ali

Abstract:

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Keywords: formyl-TIPPCu(II), Organic semiconductor, Photocapacitance, Polarizability.

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Authors: Janjira Triped, Wipada Sanongraj, Wipawee Khamwichit

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The research work covered in this study includes the morphological structure and optical properties of TiO₂-coated silk fibroin (SF) filters at 2.5% wt. TiO₂/vol. PVA solution. SEM micrographs revealed the fibrous morphology of the TiO₂-coated SF filters. An average diameter of the SF fiber was estimated to be approximately 10µm. Also, it was confirmed that TiO₂ can be adhered more on SF filter surface at higher TiO₂ dosages. The activity of semiconductor materials was studied by UV-VIS spectrophotometer method. The spectral data recorded shows the strong cut off at 390 nm. The calculated band-gap energy was about 3.19 eV. The photocatalytic activity of the filter was tested for gaseous formaldehyde removal in a modeling room with the total volume of 2.66 m³. The highest removal efficiency (54.72 ± 1.75%) was obtained at the initial formaldehyde concentration of about 5.00 ± 0.50ppm.

Keywords: Photocatalytic oxidation process, Formaldehyde (HCHO), Silk fibroin (SF), Titanium dioxide (TiO2).

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Authors: Abdulnasir Hossen, Ulrich Heute

Abstract:

In 1990 [1] the subband-DFT (SB-DFT) technique was proposed. This technique used the Hadamard filters in the decomposition step to split the input sequence into low- and highpass sequences. In the next step, either two DFTs are needed on both bands to compute the full-band DFT or one DFT on one of the two bands to compute an approximate DFT. A combination network with correction factors was to be applied after the DFTs. Another approach was proposed in 1997 [2] for using a special discrete wavelet transform (DWT) to compute the discrete Fourier transform (DFT). In the first step of the algorithm, the input sequence is decomposed in a similar manner to the SB-DFT into two sequences using wavelet decomposition with Haar filters. The second step is to perform DFTs on both bands to obtain the full-band DFT or to obtain a fast approximate DFT by implementing pruning at both input and output sides. In this paper, the wavelet-based DFT (W-DFT) with Haar filters is interpreted as SB-DFT with Hadamard filters. The only difference is in a constant factor in the combination network. This result is very important to complete the analysis of the W-DFT, since all the results concerning the accuracy and approximation errors in the SB-DFT are applicable. An application example in spectral analysis is given for both SB-DFT and W-DFT (with different filters). The adaptive capability of the SB-DFT is included in the W-DFT algorithm to select the band of most energy as the band to be computed. Finally, the W-DFT is extended to the two-dimensional case. An application in image transformation is given using two different types of wavelet filters.

Keywords: Image Transform, Spectral Analysis, Sub-Band DFT, Wavelet DFT.

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Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

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In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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Authors: Md. Mahmudul Hasan

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OFDM systems are known to have a high PAPR (Peak-to-Average Power Ratio) compared with single-carrier systems. In fact, the high PAPR is one of the most detrimental aspects in the OFDM system, as it can cause power degradation (Inband distortion) and spectral spreading (Out-of-band radiation). In this paper, from the foundation of the PAPR analysis an effective method of PAPR reduction has been proposed based on Orthogonal Eigenvector Matrix (OEM) transform. Extensive computer simulations show that a PAPR reduction of up to 4.4 dB can be obtained without introducing in-band distortion or out-of-band radiation in the system.

Keywords: Orthogonal frequency division multiplexing (OFDM), peak-to-average power ratio (PAPR), Orthogonal Eigenvector Matrix (OEM).

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Authors: P. Acosta-Santamaría, A. Ibatá-Soto, A. López-Vásquez

Abstract:

Organic compounds in wastewaters coming from textile and pharmaceutical industry generated multiple harmful effects on the environment and the human health. One of them is the methyl orange (MeO), an azoic dye considered to be a recalcitrant compound. The heterogeneous photocatalysis emerges as an alternative for treating this type of hazardous compounds, through the generation of OH radicals using radiation and a semiconductor oxide. According to the author’s knowledge, catalysts such as TiO₂ doped with metals show high efficiency in degrading MeO; however, this presents economic limitations on industrial scale. Black sand can be considered as a naturally doped catalyst because in its structure is common to find compounds such as titanium, iron and aluminum oxides, also elements such as zircon, cadmium, manganese, etc. This study reports the photocatalytic activity of the mineral black sand used as semiconductor in the discoloration of MeO by oxidation and reduction photocatalytic techniques. For this, magnetic composites from the mineral were prepared (RM, M1, M2 and NM) and their activity were tested through MeO discoloration while TiO₂ was used as reference. For the fractions, chemical, morphological and structural characterizations were performed using Scanning Electron Microscopy with Energy Dispersive X-Ray (SEM-EDX), X-Ray Diffraction (XRD) and X-Ray Fluorescence (XRF) analysis. M2 fraction showed higher MeO discoloration (93%) in oxidation conditions at pH 2 and it could be due to the presence of ferric oxides. However, the best result to reduction process was using M1 fraction (20%) at pH 2, which contains a higher titanium percentage. In the first process, hydrogen peroxide (H₂O₂) was used as electron donor agent. According to the results, black sand mineral can be used as natural semiconductor in photocatalytic process. It could be considered as a photocatalyst precursor in such processes, due to its low cost and easy access.

Keywords: Black sand mineral, methyl orange, oxidation, photocatalysis, reduction.

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Authors: Yu-Fu Chen, Zih-Jyun Dai, Chen-Te Chiu, Shiue-Chen Chiou, Yung-Wei Chen, Yu-Ming Lin, Kuan-Yu Chen, Hung-Wei Wu, Hsin-Ying Lee, Yan-Kuin Su, Shoou-Jinn Chang

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This paper presents a compact dual-band bandpass filter that involves using the quarter wavelength stepped impedance resonators (SIRs) for achieving simultaneously compact circuit size and good dual-band performance. The filter is designed at 2.4 / 3.5 GHz and constructed by two pairs of quarter wavelength SIRs and source-load lines. By properly tuning the impedance ratio, length ratio and radius of via hole of the SIRs, dual-passbands performance can be easily determined. To improve the passband selectivity, the use of source-load lines is to increase coupling energy between the resonators. The filter is showing simple configuration, effective design method and small circuit size. The measured results are in good agreement with the simulation results.

Keywords: Dual-band, bandpass filter, stepped impedance resonators, SIR.

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Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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Authors: Muhammad Yasir Wadood, Fatemeh Babaeian

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By developing ultra-wideband (UWB) systems, there is a high demand for UWB filters with low insertion loss, wide bandwidth, and having a planar structure which is compatible with other components of the UWB system. A microstrip interdigital filter is a great option for designing UWB filters. However, the presence of via holes in this structure creates difficulties in the fabrication procedure of the filter. Especially in the higher frequency band, any misalignment of the drilled via hole with the Microstrip stubs causes large errors in the measurement results compared to the desired results. Moreover, in this case (high-frequency designs), the line width of the stubs are very narrow, so highly precise small via holes are required to be implemented, which increases the cost of fabrication significantly. Also, in this case, there is a risk of having fabrication errors. To combat this issue, in this paper, a via-less UWB microstrip filter is proposed which is designed based on a modification of a conventional inter-digital bandpass filter. The novel approaches in this filter design are 1) replacement of each via hole with a quarter-wavelength open circuit stub to avoid the complexity of manufacturing, 2) using a bend structure to reduce the unwanted coupling effects and 3) minimising the size. Using the proposed structure, a UWB filter operating in the frequency band of 3.9-6.6 GHz (1-dB bandwidth) is designed and fabricated. The promising results of the simulation and measurement are presented in this paper. The selected substrate for these designs was Rogers RO4003 with a thickness of 20 mils. This is a common substrate in most of the industrial projects. The compact size of the proposed filter is highly beneficial for applications which require a very miniature size of hardware.

Keywords: Band-pass filters, inter-digital filter, microstrip, via-less.

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Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

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In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: Noha M. Rashad, W. Swelam, M. H. Abd ElAzeem

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A simple design of array antenna is presented in this paper, supporting millimeter wave applications which can be used in short range wireless communications such as 5G applications. This design enhances the use of V-band, according to IEEE standards, as the antenna works in the 70 GHz band with bandwidth more than 11 GHz and peak gain more than 13 dBi. The design is simulated using different numerical techniques achieving a very good agreement.

Keywords: 5G Technology, array antenna, microstrip, millimeter wave.

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Authors: Atif Elahi, Ijaz Mansoor Qureshi, Mehreen Atif, Noor Gul

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Orthogonal frequency division multiplexing (OFDM) is one of the best candidates for dynamic spectrum access due to its flexibility of spectrum shaping. However, the high sidelobes of the OFDM signal that result in high out-of-band radiation, introduce significant interference to the users operating in its vicinity. This problem becomes more critical in cognitive radio (CR) system that enables the secondary users (SUs) users to access the spectrum holes not used by the primary users (PUs) at that time. In this paper, we present a generalized OFDM framework that has a capability of describing any sidelobe suppression techniques, despite of whether one or a number of techniques are used. Based on that framework, we propose cancellation carrier (CC) technique in conjunction with the generalized sidelobe canceller (GSC) to reduce the out-of-band radiation in the region where the licensed users are operating. Simulation results show that the proposed technique can reduce the out-of-band radiation better when compared with the existing techniques found in the literature.

Keywords: Cognitive radio, cancellation carriers, generalized sidelobe canceller, out-of-band radiation, orthogonal frequency division multiplexing.

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Authors: P. Kamphikul, P. Krachodnok, R. Wongsan

Abstract:

This paper presents the gain improvement of a sector antenna for mobile phone base station by using the new technique to enhance its gain for microstrip antenna (MSA) array without construction enlargement. The curved woodpile Electromagnetic Band Gap (EBG) has been utilized to improve the gain instead. The advantages of this proposed antenna are reducing the length of MSAs array but providing the higher gain and easy fabrication and installation. Moreover, it provides a fan-shaped radiation pattern, wide in the horizontal direction and relatively narrow in the vertical direction, which appropriate for mobile phone base station. The paper also presents the design procedures of a 1x8 MSAs array associated with U-shaped reflector for decreasing their back and side lobes. The fabricated curved woodpile EBG exhibits bandgap characteristics at 2.1 GHz and is utilized for realizing a resonant cavity of MSAs array. This idea has been verified by both the Computer Simulation Technology (CST) software and experimental results. As the results, the fabricated proposed antenna achieves a high gain of 20.3 dB and the half-power beam widths in the E- and H-plane of 36.8 and 8.7 degrees, respectively. Good qualitative agreement between measured and simulated results of the proposed antenna was obtained.

Keywords: Gain Improvement, Microstrip Antenna Array, Electromagnetic Band Gap, Base Station.

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Authors: A. Chinig, J. Zbitou, A. Errkik, L. Elabdellaoui, A. Tajmouati, A. Tribak, M. Latrach

Abstract:

This paper presents a new structure of microstrip band pass filter (BPF) based on coupled stepped impedance resonators. Each filter consists of two coupled stepped impedance resonators connected to microstrip feed lines. The coupled junction is utilized to connect the two BPFs to the antenna. This two band pass filters are designed and simulated to operate for the digital communication system (DCS) and Industrial Scientific and Medical (ISM) bands at 1.8 GHz and 2.45 GHz respectively. The proposed circuit presents good performances with an insertion loss lower than 2.3 dB and isolation between the two channels greater than 21 dB. The prototype of the optimized diplexer have been investigated numerically by using ADS Agilent and verified with CST microwave software.

Keywords: Band Pass Filter, coupled junction, coupled stepped impedance resonators, diplexer, insertion loss, isolation.

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Authors: F. Stake

Abstract:

This work is a parametric study combining simple and well known optical theories. These simple theories are arranged to form part of one answer to the question: “Can a semi-transparent Thermo-Photo-Voltaic (TPV) emitter have an optical extinction spectrum so much greater than its optical absorption spectrum that it becomes its own band-pass pre-filter, and if so, how well might it be expected to suppress light of undesired wavelengths?” In the report, hypothetical materials and operating temperatures will be used for comparative analyses only. Thermal emission properties of these hypothetical materials were created using two openly available FORTRAN programs. Results indicate that if using highly transparent materials it may be possible to create a thermal emitter that is its own band-pass pre-filter.

Keywords: Christensen effect, DISORT, index of refraction, scattering.

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Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet

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This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce V_th of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.

Keywords: Energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm.

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Authors: Sangeeta Mondal, Vasundhara, Rajib Kar, Durbadal Mandal, S. P. Ghoshal

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This paper presents an optimal design of linear phase digital high pass finite impulse response (FIR) filter using Improved Particle Swarm Optimization (IPSO). In the design process, the filter length, pass band and stop band frequencies, feasible pass band and stop band ripple sizes are specified. FIR filter design is a multi-modal optimization problem. An iterative method is introduced to find the optimal solution of FIR filter design problem. Evolutionary algorithms like real code genetic algorithm (RGA), particle swarm optimization (PSO), improved particle swarm optimization (IPSO) have been used in this work for the design of linear phase high pass FIR filter. IPSO is an improved PSO that proposes a new definition for the velocity vector and swarm updating and hence the solution quality is improved. A comparison of simulation results reveals the optimization efficacy of the algorithm over the prevailing optimization techniques for the solution of the multimodal, nondifferentiable, highly non-linear, and constrained FIR filter design problems.

Keywords: FIR Filter, IPSO, GA, PSO, Parks and McClellan Algorithm, Evolutionary Optimization, High Pass Filter

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Authors: H. S. Lim, M. Z. MatJafri, K. Abdullah, N. Mohd. Saleh

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Retrieval of the surface reflectance is important in the remotely sensed data analysis to obtain the atmospheric reflectance or atmospheric correction. The relationship between visible and mid infrared reflectance over land was investigated and developed in this study. The surface reflectances of the two visible bands were measured using a handheld spectroradiometer collected around Penang Island. In this study, we use the assumption that the 2.1 μm band is not affected by aerosol and it is transparent to most aerosol types (except dust). Therefore the satellite observed signal is the same as the surface signal in 2.1 μm band. The correlation between the surface reflectance measured by the spectroradiometer in the blue and red region and the 2.1 μm observed by the satellite has been established. We investigate five dates of Landsat TM scenes in this study. The finding obtained by this study indicates that the surface reflectance can be retrieved from the 2.1 μm band.

Keywords: Surface Reflectance, Landsat TM, Aerosol, Spectroradiometer.

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Authors: M. K. Moazzam, A. Salmanpour, M. Nirouei

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In this paper we have numerically analyzed terahertzrange wavelength conversion using nondegenerate four wave mixing (NDFWM) in a SOA integrated DFB laser (experiments reported both in MIT electronics and Fujitsu research laboratories). For analyzing semiconductor optical amplifier (SOA), we use finitedifference beam propagation method (FDBPM) based on modified nonlinear SchrÖdinger equation and for distributed feedback (DFB) laser we use coupled wave approach. We investigated wavelength conversion up to 4THz probe-pump detuning with conversion efficiency -5dB in 1THz probe-pump detuning for a SOA integrated quantum-well

Keywords: distributed feedback laser, nondegenerate fourwave mixing, semiconductor optical amplifier, wavelengthconversion

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Authors: Davit Mirzoyan, Ararat Khachatryan

Abstract:

A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.

Keywords: Detection, monitoring, process corner, process variation.

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Authors: S. Kampeephat, P. Krachodnok, R. Wongsan

Abstract:

The conventional rectangular horn has been used for microwave antenna a long time. Its gain can be increased by enlarging the construction of horn to flare exponentially. This paper presents a study of the shaped woodpile Electromagnetic Band Gap (EBG) to improve its gain for conventional horn without construction enlargement. The gain enhancement synthesis method for shaped woodpile EBG that has to transfer the electromagnetic fields from aperture of a horn antenna through woodpile EBG is presented by using the variety of shaped woodpile EBGs such as planar, triangular, quadratic, circular, gaussian, cosine, and squared cosine structures. The proposed technique has the advantages of low profile, low cost for fabrication and light weight. The antenna characteristics such as reflection coefficient (S₁₁), radiation patterns and gain are simulated by utilized A Computer Simulation Technology (CST) software. With the proposed concept, an antenna prototype was fabricated and experimented. The S₁₁ and radiation patterns obtained from measurements show a good impedance matching and a gain enhancement of the proposed antenna. The gain at dominant frequency of 10 GHz is 25.6 dB, application for X- and Ku-Band Radar, that higher than the gain of the basic rectangular horn antenna around 8 dB with adding only one appropriated EBG structures.

Keywords: Conventional Rectangular Horn Antenna, Electromagnetic Band Gap, Gain Enhancement, X- and Ku-Band Radar.

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Authors: H. Kaatuzian, M. Sedghi, S. Khatami

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In this paper, by exploiting a single semiconductor optical amplifier-Mach Zehnder Interferometer (SOA-MZI), an integratable all-optical flip-flop (AOFF) is proposed. It is composed of a SOA-MZI with a bidirectional coupler at the output. Output signals of both bar and crossbar of the SOA-MZI is fed back to SOAs located in the arms of the Mach-Zehnder Interferometer (MZI). The injected photon-rates to the SOAs are modulated by feedback signals in order to form optical flip-flop. According to numerical analysis, Gaussian optical pulses with the energy of 15.2 fJ and 20 ps duration with the full width at half-maximum criterion, can switch the states of the SR-AOFF. Also simulation results show that the SR-AOFF has the contrast ratio of 8.5 dB between two states with the transition time of nearly 20 ps.

Keywords: All Optical, Flip-Flop, Mach-Zehnder Interferometer (MZI), Semiconductor Optical Amplifier (SOA).

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Authors: İsmail Aksoy, Hacı Bodur, Nihan Altıntas

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This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: Active snubber cell, boost converter, zero current switching, zero voltage switching.

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Authors: Bella Llego

Abstract:

This study aims to investigate the motivating and de-motivating factors that affect the learning ability of students attending the English Learning Center in Thailand. The subjects of this research were 20 students from the Hana Semiconductor Co., Limited. The data were collected by using questionnaire and analyzed using the SPSS program for the percentage, mean and standard deviation. The research results show that the main motivating factor in learning English at Hana Semiconductor Co., Ltd. is that it would help the employees to communicate with foreign customers and managers. Other reasons include the need to read and write e-mails, and reports in English, as well as to increase overall general knowledge. The main de-motivating factor is that there is a lot of vocabulary to remember when learning English. Another de-motivating factor is that when homework is given, the students have no time to complete the tasks required of them at the end of the working day.

Keywords: Motivating, demotivating, English learning center, student communicate.

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