Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2447

Search results for: Static random access memory

2447 Schmitt Trigger Based SRAM Using Finfet Technology- Shorted Gate Mode

Authors: Vasundara Patel K. S., Harsha N. Bhushan, Kiran G. Gadag, Nischal Prasad B. N., Mohmmed Haroon

Abstract:

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Keywords: Schmitt trigger based SRAM, FinFET, and Static Noise Margin.

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2446 Analysis of Performance of 3T1D Dynamic Random-Access Memory Cell

Authors: Nawang Chhunid, Gagnesh Kumar

Abstract:

On-chip memories consume a significant portion of the overall die space and power in modern microprocessors. On-chip caches depend on Static Random-Access Memory (SRAM) cells and scaling of technology occurring as per Moore’s law. Unfortunately, the scaling is affecting stability, performance, and leakage power which will become major problems for future SRAMs in aggressive nanoscale technologies due to increasing device mismatch and variations. 3T1D Dynamic Random-Access Memory (DRAM) cell is a non-destructive read DRAM cell with three transistors and a gated diode. In 3T1D DRAM cell gated diode (D1) acts as a storage device and also as an amplifier, which leads to fast read access. Due to its high tolerance to process variation, high density, and low cost of memory as compared to 6T SRAM cell, it is universally used by the advanced microprocessor for on chip data and program memory. In the present paper, it has been shown that 3T1D DRAM cell can perform better in terms of fast read access as compared to 6T, 4T, 3T SRAM cells, respectively.

Keywords: DRAM cell, read access time, tanner EDA tool write access time and retention time, average power dissipation.

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2445 Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage

Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

Abstract:

The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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2444 Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications

Authors: Z. Fang, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.

Keywords: Bipolar switching, non volatile memory, resistive random access memory, 3-D stacking.

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2443 Bandwidth, Area Efficient and Target Device Independent DDR SDRAM Controller

Authors: T. Mladenov, F. Mujahid, E. Jung, D. Har

Abstract:

The application of the synchronous dynamic random access memory (SDRAM) has gone beyond the scope of personal computers for quite a long time. It comes into hand whenever a big amount of low price and still high speed memory is needed. Most of the newly developed stand alone embedded devices in the field of image, video and sound processing take more and more use of it. The big amount of low price memory has its trade off – the speed. In order to take use of the full potential of the memory, an efficient controller is needed. Efficient stands for maximum random accesses to the memory both for reading and writing and less area after implementation. This paper proposes a target device independent DDR SDRAM pipelined controller and provides performance comparison with available solutions.

Keywords: DDR SDRAM, controller, effective implementation

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2442 Hybrid Approach for Memory Analysis in Windows System

Authors: Khairul Akram Zainol Ariffin, Ahmad Kamil Mahmood, Jafreezal Jaafar, Solahuddin Shamsuddin

Abstract:

Random Access Memory (RAM) is an important device in computer system. It can represent the snapshot on how the computer has been used by the user. With the growth of its importance, the computer memory has been an issue that has been discussed in digital forensics. A number of tools have been developed to retrieve the information from the memory. However, most of the tools have their limitation in the ability of retrieving the important information from the computer memory. Hence, this paper is aimed to discuss the limitation and the setback for two main techniques such as process signature search and process enumeration. Then, a new hybrid approach will be presented to minimize the setback in both individual techniques. This new approach combines both techniques with the purpose to retrieve the information from the process block and other objects in the computer memory. Nevertheless, the basic theory in address translation for x86 platforms will be demonstrated in this paper.

Keywords: Algorithms, Digital Forensics, Memory Analysis, Signature Search.

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2441 A Nano-Scaled SRAM Guard Band Design with Gaussian Mixtures Model of Complex Long Tail RTN Distributions

Authors: Worawit Somha, Hiroyuki Yamauchi

Abstract:

This paper proposes, for the first time, how the challenges facing the guard-band designs including the margin assist-circuits scheme for the screening-test in the coming process generations should be addressed. The increased screening error impacts are discussed based on the proposed statistical analysis models. It has been shown that the yield-loss caused by the misjudgment on the screening test would become 5-orders of magnitude larger than that for the conventional one when the amplitude of random telegraph noise (RTN) caused variations approaches to that of random dopant fluctuation. Three fitting methods to approximate the RTN caused complex Gamma mixtures distributions by the simple Gaussian mixtures model (GMM) are proposed and compared. It has been verified that the proposed methods can reduce the error of the fail-bit predictions by 4-orders of magnitude.

Keywords: Mixtures of Gaussian, Random telegraph noise, EM algorithm, Long-tail distribution, Fail-bit analysis, Static random access memory, Guard band design.

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2440 Design and Implementation of a Memory Safety Isolation Method Based on the Xen Cloud Environment

Authors: Dengpan Wu, Dan Liu

Abstract:

In view of the present cloud security problem has increasingly become one of the major obstacles hindering the development of the cloud computing, put forward a kind of memory based on Xen cloud environment security isolation technology implementation. And based on Xen virtual machine monitor system, analysis of the model of memory virtualization is implemented, using Xen memory virtualization system mechanism of super calls and grant table, based on the virtual machine manager internal implementation of access control module (ACM) to design the security isolation system memory. Experiments show that, the system can effectively isolate different customer domain OS between illegal access to memory data.

Keywords: Cloud security, memory isolation, Xen, virtual machine.

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2439 Switching Behaviors of TiN/HfOx/Pt Based RRAM

Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.

Keywords: HfOx, resistive switching, RRAM.

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2438 ALD HfO2 Based RRAM with Ti Capping

Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.

Keywords: HfOx, resistive switching, RRAM, metal capping.

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2437 Dual-Network Memory Model for Temporal Sequences

Authors: Motonobu Hattori, Rina Suzuki

Abstract:

In neural networks, when new patters are learned by a network, they radically interfere with previously stored patterns. This drawback is called catastrophic forgetting. We have already proposed a biologically inspired dual-network memory model which can much reduce this forgetting for static patterns. In this model, information is first stored in the hippocampal network, and thereafter, it is transferred to the neocortical network using pseudopatterns. Because temporal sequence learning is more important than static pattern learning in the real world, in this study, we improve our conventional  dual-network memory model so that it can deal with temporal sequences without catastrophic forgetting. The computer simulation results show the effectiveness of the proposed dual-network memory model.  

Keywords: Catastrophic forgetting, dual-network, temporal sequences.

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2436 3D Network-on-Chip with on-Chip DRAM: An Empirical Analysis for Future Chip Multiprocessor

Authors: Thomas Canhao Xu, Bo Yang, Alexander Wei Yin, Pasi Liljeberg, Hannu Tenhunen

Abstract:

With the increasing number of on-chip components and the critical requirement for processing power, Chip Multiprocessor (CMP) has gained wide acceptance in both academia and industry during the last decade. However, the conventional bus-based onchip communication schemes suffer from very high communication delay and low scalability in large scale systems. Network-on-Chip (NoC) has been proposed to solve the bottleneck of parallel onchip communications by applying different network topologies which separate the communication phase from the computation phase. Observing that the memory bandwidth of the communication between on-chip components and off-chip memory has become a critical problem even in NoC based systems, in this paper, we propose a novel 3D NoC with on-chip Dynamic Random Access Memory (DRAM) in which different layers are dedicated to different functionalities such as processors, cache or memory. Results show that, by using our proposed architecture, average link utilization has reduced by 10.25% for SPLASH-2 workloads. Our proposed design costs 1.12% less execution cycles than the traditional design on average.

Keywords: 3D integration, network-on-chip, memory-on-chip, DRAM, chip multiprocessor.

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2435 Parallel Vector Processing Using Multi Level Orbital DATA

Authors: Nagi Mekhiel

Abstract:

Many applications use vector operations by applying single instruction to multiple data that map to different locations in conventional memory. Transferring data from memory is limited by access latency and bandwidth affecting the performance gain of vector processing. We present a memory system that makes all of its content available to processors in time so that processors need not to access the memory, we force each location to be available to all processors at a specific time. The data move in different orbits to become available to other processors in higher orbits at different time. We use this memory to apply parallel vector operations to data streams at first orbit level. Data processed in the first level move to upper orbit one data element at a time, allowing a processor in that orbit to apply another vector operation to deal with serial code limitations inherited in all parallel applications and interleaved it with lower level vector operations.

Keywords: Memory organization, parallel processors, serial code, vector processing.

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2434 A PWM Controller with Multiple-Access Table Look-up for DC-DC Buck Conversion

Authors: Steve Hung-Lung Tu, Chu-Tse Lee

Abstract:

A new power regulator controller with multiple-access PID compensator is proposed, which can achieve a minimum memory requirement for fully table look-up. The proposed regulator controller employs hysteresis comparators, an error process unit (EPU) for voltage regulation, a multiple-access PID compensator and a lowpower- consumption digital PWM (DPWM). Based on the multipleaccess mechanism, the proposed controller can alleviate the penalty of large amount of memory employed for fully table look-up based PID compensator in the applications of power regulation. The proposed controller has been validated with simulation results.

Keywords: Multiple access, PID compensator, PWM, Buck conversion.

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2433 An Embedded System Design for SRAM SEU Test

Authors: Kyoung Kun Lee, Soongyu Kwon, Jong Tae Kim

Abstract:

An embedded system for SEU(single event upset) test needs to be designed to prevent system failure by high-energy particles during measuring SEU. SEU is a phenomenon in which the data is changed temporary in semiconductor device caused by high-energy particles. In this paper, we present an embedded system for SRAM(static random access memory) SEU test. SRAMs are on the DUT(device under test) and it is separated from control board which manages the DUT and measures the occurrence of SEU. It needs to have considerations for preventing system failure while managing the DUT and making an accurate measurement of SEUs. We measure the occurrence of SEUs from five different SRAMs at three different cyclotron beam energies 30, 35, and 40MeV. The number of SEUs of SRAMs ranges from 3.75 to 261.00 in average.

Keywords: embedded system, single event upset, SRAM

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2432 A Comparative Study of Main Memory Databases and Disk-Resident Databases

Authors: F. Raja, M.Rahgozar, N. Razavi, M. Siadaty

Abstract:

Main Memory Database systems (MMDB) store their data in main physical memory and provide very high-speed access. Conventional database systems are optimized for the particular characteristics of disk storage mechanisms. Memory resident systems, on the other hand, use different optimizations to structure and organize data, as well as to make it reliable. This paper provides a brief overview on MMDBs and one of the memory resident systems named FastDB and compares the processing time of this system with a typical disc resident database based on the results of the implementation of TPC benchmarks environment on both.

Keywords: Disk-Resident Database, FastDB, Main MemoryDatabase.

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2431 Compression and Filtering of Random Signals under Constraint of Variable Memory

Authors: Anatoli Torokhti, Stan Miklavcic

Abstract:

We study a new technique for optimal data compression subject to conditions of causality and different types of memory. The technique is based on the assumption that some information about compressed data can be obtained from a solution of the associated problem without constraints of causality and memory. This allows us to consider two separate problem related to compression and decompression subject to those constraints. Their solutions are given and the analysis of the associated errors is provided.

Keywords: stochastic signals, optimization problems in signal processing.

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2430 Memory and Higher Cognition

Authors: A. Páchová

Abstract:

Working memory (WM) can be defined as the system which actively holds information in the mind to do tasks in spite of the distraction. Contrary, short-term memory (STM) is a system that represents the capacity for the active storing of information without distraction. There has been accumulating evidence that these types of memory are related to higher cognition (HC). The aim of this study was to verify the relationship between HC and memory (visual STM and WM, auditory STM and WM). 59 primary school children were tested by intelligence test, mathematical tasks (HC) and memory subtests. We have shown that visual but not auditory memory is a significant predictor of higher cognition. The relevance of these results are discussed.

Keywords: higher cognition, long-term memory, short-term memory, working memory

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2429 Performance Evaluation of XMAC and BMAC Routing Protocol under Static and Mobility Scenarios in Wireless Sensor Network

Authors: M. V. Ramana Rao, T. Adilakshmi

Abstract:

Based on application requirements, nodes are static or mobile in Wireless Sensor Networks (WSNs). Mobility poses challenges in protocol design, especially at the link layer requiring mobility adaptation algorithms to localize mobile nodes and predict link quality to be established with them. This study implements XMAC and Berkeley Media Access Control (BMAC) routing protocols to evaluate performance under WSN’s static and mobility conditions. This paper gives a comparative study of mobility-aware MAC protocols. Routing protocol performance, based on Average End to End Delay, Average Packet Delivery Ratio, Average Number of hops, and Jitter is evaluated.

Keywords: Wireless Sensor Network (WSN), Medium Access Control (MAC), Berkeley Media Access Control (BMAC), mobility.

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2428 Random Access in IoT Using Naïve Bayes Classification

Authors: Alhusein Almahjoub, Dongyu Qiu

Abstract:

This paper deals with the random access procedure in next-generation networks and presents the solution to reduce total service time (TST) which is one of the most important performance metrics in current and future internet of things (IoT) based networks. The proposed solution focuses on the calculation of optimal transmission probability which maximizes the success probability and reduces TST. It uses the information of several idle preambles in every time slot, and based on it, it estimates the number of backlogged IoT devices using Naïve Bayes estimation which is a type of supervised learning in the machine learning domain. The estimation of backlogged devices is necessary since optimal transmission probability depends on it and the eNodeB does not have information about it. The simulations are carried out in MATLAB which verify that the proposed solution gives excellent performance.

Keywords: Random access, LTE/LTE-A, 5G, machine learning, Naïve Bayes estimation.

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2427 Data Acquisition from Cell Phone using Logical Approach

Authors: Keonwoo Kim, Dowon Hong, Kyoil Chung, Jae-Cheol Ryou

Abstract:

Cell phone forensics to acquire and analyze data in the cellular phone is nowadays being used in a national investigation organization and a private company. In order to collect cellular phone flash memory data, we have two methods. Firstly, it is a logical method which acquires files and directories from the file system of the cell phone flash memory. Secondly, we can get all data from bit-by-bit copy of entire physical memory using a low level access method. In this paper, we describe a forensic tool to acquire cell phone flash memory data using a logical level approach. By our tool, we can get EFS file system and peek memory data with an arbitrary region from Korea CDMA cell phone.

Keywords: Forensics, logical method, acquisition, cell phone, flash memory.

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2426 Inefficiency of Data Storing in Physical Memory

Authors: Kamaruddin Malik Mohamad, Sapiee Haji Jamel, Mustafa Mat Deris

Abstract:

Memory forensic is important in digital investigation. The forensic is based on the data stored in physical memory that involve memory management and processing time. However, the current forensic tools do not consider the efficiency in terms of storage management and the processing time. This paper shows the high redundancy of data found in the physical memory that cause inefficiency in processing time and memory management. The experiment is done using Borland C compiler on Windows XP with 512 MB of physical memory.

Keywords: Digital Evidence, Memory Forensics.

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2425 The Application of Specialized Memory Manager in Interactive CAD Systems

Authors: Wei Song, Lian-he Yang

Abstract:

Interactive CAD systems have to allocate and deallocate memory frequently. Frequent memory allocation and deallocation can play a significant role in degrading application performance. An application may use memory in a very specific way and pay a performance penalty for functionality it does not need. We could counter that by developing specialized memory managers.

Keywords: Interactive CAD systems, Specialized Memory Manager.

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2424 Enhanced Disk-Based Databases Towards Improved Hybrid In-Memory Systems

Authors: Samuel Kaspi, Sitalakshmi Venkatraman

Abstract:

In-memory database systems are becoming popular due to the availability and affordability of sufficiently large RAM and processors in modern high-end servers with the capacity to manage large in-memory database transactions. While fast and reliable inmemory systems are still being developed to overcome cache misses, CPU/IO bottlenecks and distributed transaction costs, disk-based data stores still serve as the primary persistence. In addition, with the recent growth in multi-tenancy cloud applications and associated security concerns, many organisations consider the trade-offs and continue to require fast and reliable transaction processing of diskbased database systems as an available choice. For these organizations, the only way of increasing throughput is by improving the performance of disk-based concurrency control. This warrants a hybrid database system with the ability to selectively apply an enhanced disk-based data management within the context of inmemory systems that would help improve overall throughput. The general view is that in-memory systems substantially outperform disk-based systems. We question this assumption and examine how a modified variation of access invariance that we call enhanced memory access, (EMA) can be used to allow very high levels of concurrency in the pre-fetching of data in disk-based systems. We demonstrate how this prefetching in disk-based systems can yield close to in-memory performance, which paves the way for improved hybrid database systems. This paper proposes a novel EMA technique and presents a comparative study between disk-based EMA systems and in-memory systems running on hardware configurations of equivalent power in terms of the number of processors and their speeds. The results of the experiments conducted clearly substantiate that when used in conjunction with all concurrency control mechanisms, EMA can increase the throughput of disk-based systems to levels quite close to those achieved by in-memory system. The promising results of this work show that enhanced disk-based systems facilitate in improving hybrid data management within the broader context of in-memory systems.

Keywords: Concurrency control, disk-based databases, inmemory systems, enhanced memory access (EMA).

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2423 Memory Effects in Randomly Perturbed Nematic Liquid Crystals

Authors: Amid Ranjkesh, Milan Ambrožič, Samo Kralj

Abstract:

We study the typical domain size and configuration character of a randomly perturbed system exhibiting continuous symmetry breaking. As a model system we use rod-like objects within a cubic lattice interacting via a Lebwohl–Lasher-type interaction. We describe their local direction with a headless unit director field. An example of such systems represents nematic LC or nanotubes. We further introduce impurities of concentration p, which impose the random anisotropy field-type disorder to directors. We study the domain-type pattern of molecules as a function of p, anchoring strength w between a neighboring director and impurity, temperature, history of samples. In simulations we quenched the directors either from the random or homogeneous initial configuration. Our results show that a history of system strongly influences: i) the average domain coherence length; and ii) the range of ordering in the system. In the random case the obtained order is always short ranged (SR). On the contrary, in the homogeneous case, SR is obtained only for strong enough anchoring and large enough concentration p. In other cases, the ordering is either of quasi long range (QLR) or of long range (LR). We further studied memory effects for the random initial configuration. With increasing external ordering field B either QLR or LR is realized.

Keywords: Lebwohl-Lasher model, liquid crystals, disorder, memory effect, orientational order.

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2422 Memory Leak Detection in Distributed System

Authors: Roohi Shabrin S., Devi Prasad B., Prabu D., Pallavi R. S., Revathi P.

Abstract:

Due to memory leaks, often-valuable system memory gets wasted and denied for other processes thereby affecting the computational performance. If an application-s memory usage exceeds virtual memory size, it can leads to system crash. Current memory leak detection techniques for clusters are reactive and display the memory leak information after the execution of the process (they detect memory leak only after it occur). This paper presents a Dynamic Memory Monitoring Agent (DMMA) technique. DMMA framework is a dynamic memory leak detection, that detects the memory leak while application is in execution phase, when memory leak in any process in the cluster is identified by DMMA it gives information to the end users to enable them to take corrective actions and also DMMA submit the affected process to healthy node in the system. Thus provides reliable service to the user. DMMA maintains information about memory consumption of executing processes and based on this information and critical states, DMMA can improve reliability and efficaciousness of cluster computing.

Keywords: Dynamic Memory Monitoring Agent (DMMA), Cluster Computing, Memory Leak, Fault Tolerant Framework, Dynamic Memory Leak Detection (DMLD).

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2421 Testing Loaded Programs Using Fault Injection Technique

Authors: S. Manaseer, F. A. Masooud, A. A. Sharieh

Abstract:

Fault tolerance is critical in many of today's large computer systems. This paper focuses on improving fault tolerance through testing. Moreover, it concentrates on the memory faults: how to access the editable part of a process memory space and how this part is affected. A special Software Fault Injection Technique (SFIT) is proposed for this purpose. This is done by sequentially scanning the memory of the target process, and trying to edit maximum number of bytes inside that memory. The technique was implemented and tested on a group of programs in software packages such as jet-audio, Notepad, Microsoft Word, Microsoft Excel, and Microsoft Outlook. The results from the test sample process indicate that the size of the scanned area depends on several factors. These factors are: process size, process type, and virtual memory size of the machine under test. The results show that increasing the process size will increase the scanned memory space. They also show that input-output processes have more scanned area size than other processes. Increasing the virtual memory size will also affect the size of the scanned area but to a certain limit.

Keywords: Complex software systems, Error detection, Fault tolerance, Injection and testing methodology, Memory faults, Process and virtual memory.

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2420 Research and Development of a Biomorphic Robot Driven by Shape Memory Alloys

Authors: Y.J. Lai, H.Y. Peng, M.W. Wu, J. Shaw

Abstract:

In this study, we used shape memory alloys as actuators to build a biomorphic robot which can imitate the motion of an earthworm. The robot can be used to explore in a narrow space. Therefore we chose shape memory alloys as actuators. Because of the small deformation of a wire shape memory alloy, spiral shape memory alloys are selected and installed both on the X axis and Y axis (each axis having two shape memory alloys) to enable the biomorphic robot to do reciprocating motion. By the mechanism we designed, the robot can increase the distance as it moves in a duty cycle. In addition, two shape memory alloys are added to the robot head for controlling right and left turns. By sending pulses through the I/O card from the controller, the signals are then amplified by a driver to heat the shape memory alloys in order to make the SMA shrink to pull the mechanism to move.

Keywords: Biomorphic Robot, Shape Memory Alloy.

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2419 Exploring the Potential of Phase Change Memories as an Alternative to DRAM Technology

Authors: Venkataraman Krishnaswami, Venkatasubramanian Viswanathan

Abstract:

Scalability poses a severe threat to the existing DRAM technology. The capacitors that are used for storing and sensing charge in DRAM are generally not scaled beyond 42nm. This is because; the capacitors must be sufficiently large for reliable sensing and charge storage mechanism. This leaves DRAM memory scaling in jeopardy, as charge sensing and storage mechanisms become extremely difficult. In this paper we provide an overview of the potential and the possibilities of using Phase Change Memory (PCM) as an alternative for the existing DRAM technology. The main challenges that we encounter in using PCM are, the limited endurance, high access latencies, and higher dynamic energy consumption than that of the conventional DRAM. We then provide an overview of various methods, which can be employed to overcome these drawbacks. Hybrid memories involving both PCM and DRAM can be used, to achieve good tradeoffs in access latency and storage density. We conclude by presenting, the results of these methods that makes PCM a potential replacement for the current DRAM technology.

Keywords: DRAM, Phase Change Memory.

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2418 Component Lifecycle and Concurrency Model in Usage Control (UCON) System

Authors: P. Ghann, J. Shiguang, C. Zhou

Abstract:

Access control is one of the most challenging issues facing information security. Access control is defined as, the ability to permit or deny access to a particular computational resource or digital information by an unauthorized user or subject. The concept of usage control (UCON) has been introduced as a unified approach to capture a number of extensions for access control models and systems. In UCON, an access decision is determined by three factors: authorizations, obligations and conditions. Attribute mutability and decision continuity are two distinct characteristics introduced by UCON for the first time. An observation of UCON components indicates that, the components are predefined and static. In this paper, we propose a new and flexible model of usage control for the creation and elimination of some of these components; for example new objects, subjects, attributes and integrate these with the original UCON model. We also propose a model for concurrent usage scenarios in UCON.

Keywords: Access Control, Concurrency, Digital container, Usage control.

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