Search results for: CMOS IC design

Authors: Syed Islam, Yiyun Huang, Sebastian Magierowski, Ebrahim Ghafar-Zadeh

Abstract:

This paper presents system level CMOS solid-state nanopore techniques enhancement for speedup next generation molecular recording and high throughput channels. This discussion also considers optimum number of base-pair (bp) measurements through channel as an important role to enhance potential read accuracy. Effective power consumption estimation offered suitable range of multi-channel configuration. Nanopore bp extraction model in statistical method could contribute higher read accuracy with longer read-length (200 < read-length). Nanopore ionic current switching with Time Multiplexing (TM) based multichannel readout system contributed hardware savings.

Keywords: DNA, Nanopore, Amplifier, ADC, Multichannel.

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Authors: Yavar Safaei Mehrabani, Mehdi Hosseinzadeh

Abstract:

As embedded and portable systems were emerged power consumption of circuits had been major challenge. On the other hand latency as determines frequency of circuits is also vital task. Therefore, trade off between both of them will be desirable. Modulo 2n+1 adders are important part of the residue number system (RNS) based arithmetic units with the interesting moduli set (2n-1,2n, 2n+1). In this manuscript we have introduced novel binary representation to the design of modulo 2n+1 adder. VLSI realization of proposed architecture under 180 nm full static CMOS technology reveals its superiority in terms of area, power consumption and power-delay product (PDP) against several peer existing structures.

Keywords: Computer arithmetic, modulo 2n+1 adders, Residue Number System (RNS), VLSI.

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Authors: Susmita Sahoo, Madhumanti Datta, Rajib Kar

Abstract:

The resistive-inductive-capacitive behavior of long interconnects which are driven by CMOS gates are presented in this paper. The analysis is based on the ¤Ç-model of a RLC load and is developed for submicron devices. Accurate and analytical expressions for the output load voltage, the propagation delay and the short circuit power dissipation have been proposed after solving a system of differential equations which accurately describe the behavior of the circuit. The effect of coupling capacitance between input and output and the short circuit current on these performance parameters are also incorporated in the proposed model. The estimated proposed delay and short circuit power dissipation are in very good agreement with the SPICE simulation with average relative error less than 6%.

Keywords: Delay, Inverter, Short Circuit Power, ¤Ç-Model, RLCInterconnect, VLSI

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Authors: S. Abdollahi Pour, M. Saneei

Abstract:

This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

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Authors: Chang Soo Kang, In Ho Im, Sergey Churayev, Timour Paltashev

Abstract:

This paper describes the design of new method of propagation delay measurement in micro and nanostructures during characterization of ASIC standard library cell. Providing more accuracy timing information about library cell to the design team we can improve a quality of timing analysis inside of ASIC design flow process. Also, this information could be very useful for semiconductor foundry team to make correction in technology process. By comparison of the propagation delay in the CMOS element and result of analog SPICE simulation. It was implemented as digital IP core for semiconductor manufacturing process. Specialized method helps to observe the propagation time delay in one element of the standard-cell library with up-to picoseconds accuracy and less. Thus, the special useful solutions for VLSI schematic to parameters extraction, basic cell layout verification, design simulation and verification are announced.

Keywords: phase error accumulation methodology, gatepropagation delay, Processor Testing, MEMS Testing

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Authors: Padmanabhan Balasubramanian, C. Ardil

Abstract:

In this paper, we consider the problem of logic simplification for a special class of logic functions, namely complementary Boolean functions (CBF), targeting low power implementation using static CMOS logic style. The functions are uniquely characterized by the presence of terms, where for a canonical binary 2-tuple, D(mj) ∪ D(mk) = { } and therefore, we have | D(mj) ∪ D(mk) | = 0 [19]. Similarly, D(Mj) ∪ D(Mk) = { } and hence | D(Mj) ∪ D(Mk) | = 0. Here, 'mk' and 'Mk' represent a minterm and maxterm respectively. We compare the circuits minimized with our proposed method with those corresponding to factored Reed-Muller (f-RM) form, factored Pseudo Kronecker Reed-Muller (f-PKRM) form, and factored Generalized Reed-Muller (f-GRM) form. We have opted for algebraic factorization of the Reed-Muller (RM) form and its different variants, using the factorization rules of [1], as it is simple and requires much less CPU execution time compared to Boolean factorization operations. This technique has enabled us to greatly reduce the literal count as well as the gate count needed for such RM realizations, which are generally prone to consuming more cells and subsequently more power consumption. However, this leads to a drawback in terms of the design-for-test attribute associated with the various RM forms. Though we still preserve the definition of those forms viz. realizing such functionality with only select types of logic gates (AND gate and XOR gate), the structural integrity of the logic levels is not preserved. This would consequently alter the testability properties of such circuits i.e. it may increase/decrease/maintain the same number of test input vectors needed for their exhaustive testability, subsequently affecting their generalized test vector computation. We do not consider the issue of design-for-testability here, but, instead focus on the power consumption of the final logic implementation, after realization with a conventional CMOS process technology (0.35 micron TSMC process). The quality of the resulting circuits evaluated on the basis of an established cost metric viz., power consumption, demonstrate average savings by 26.79% for the samples considered in this work, besides reduction in number of gates and input literals by 39.66% and 12.98% respectively, in comparison with other factored RM forms.

Keywords: Reed-Muller forms, Logic function, Hammingdistance, Algebraic factorization, Low power design.

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Authors: Karama M. AL-Tamimi, Munir A. Al-Absi

Abstract:

A new OTA-based logarithmic-control variable gain current amplifier (LCCA) is presented. It consists of two Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The circuit operates from 0.6V DC power supply and consumes 0.6 μW. The linear-dB controllable output range is 43 dB with maximum error less than 0.5dB. The functionality of the proposed design was confirmed using HSPICE in 0.35μm CMOS process technology.

Keywords: LCCA, OTA, Logarithmic, VGA, Weak inversion, Current-mode

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Authors: Jingjing Lan, Jun Yu, Muthukumaraswamy Annamalai Arasu

Abstract:

This paper presents a digital non-linear pulse-width modulation (PWM) controller in a high-voltage (HV) buck-boost DC-DC converter for the piezoelectric transducer of the down-hole acoustic telemetry system. The proposed design controls the generation of output signal with voltage higher than the supply voltage and is targeted to work under high temperature. To minimize the power consumption and silicon area, a simple and efficient design scheme is employed to develop the PWM controller. The proposed PWM controller consists of serial to parallel (S2P) converter, data assign block, a mode and duty cycle controller (MDC), linearly PWM (LPWM) and noise shaper, pulse generator and clock generator. To improve the reliability of circuit operation at higher temperature, this design is fabricated with the 1.0-μm silicon-on-insulator (SOI) CMOS process. The implementation results validated that the proposed design has the advantages of smaller size, lower power consumption and robust thermal stability.

Keywords: DC-DC power conversion, digital control, high temperatures, pulse-width modulation.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

Abstract:

Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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Authors: Kittipong Tripetch

Abstract:

This paper proposes a study of input impedance of 2 types of CMOS active inductors. It derives 2 input impedance formulas. The first formula is the input impedance of the grounded active inductor. The second formula is the input impedance of the floating active inductor. After that, these formulas can be used to simulate magnitude and phase response of input impedance as a function of current consumption with MATLAB. Common mode rejection ratio (CMRR) of the fully differential bandpass amplifier is derived based on superposition principle. CMRR as a function of input frequency is plotted as a function of current consumption. 

Keywords: Grounded active inductor, floating active inductor, Fully differential bandpass amplifier.

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Authors: Arup K. George, Wai Pan Chan, Zhi Hui Kong, Minkyu Je

Abstract:

This paper describes a low-power second-order filter for a continuous-time chopper stabilized capacitive sensor interface, integrated with a fully differential post-CMOS surface-micromachined MEMS pressure sensor. The circuit uses a single-ended folded-cascode operational amplifier and two GM-C filters connected in cascade. The circuit is realized in a 0.18 μm CMOS process and offers differential to single-ended conversion. The novelty of the scheme is the cascade of two GM-C filters to achieve a second-order filter while minimizing power dissipation. The simulated filter cutoff frequency is 1.14 kHz at common-mode voltage 1.65 V, operating from a 3.3 V supply while dissipating 172μW of power. The filter achieves an operating range of 1V for an output load of 1MOhm and 10pF.

Keywords: Chopper Stabilization, MEMS, Pressure Sensors, Low Pass Filter

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Authors: E. Farshidi

Abstract:

In this paper, based on a novel synthesis, a set of new simplified circuit design to implement the linguistic-hedge operations for adjusting the fuzzy membership function set is presented. The circuits work in current-mode and employ floating-gate MOS (FGMOS) transistors that operate in weak inversion region. Compared to the other proposed circuits, these circuits feature severe reduction of the elements number, low supply voltage (0.7V), low power consumption (<200nW), immunity from body effect and wide input dynamic range (>60dB). In this paper, a set of fuzzy linguistic hedge circuits, including absolutely, very, much more, more, plus minus, more or less and slightly, has been implemented in 0.18 mm CMOS process. Simulation results by Hspice confirm the validity of the proposed design technique and show high performance of the circuits.

Keywords: Current-mode, Linguistic-Hedge, Fuzzy Logic, lowpower

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Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

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RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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Authors: Devin Atkin, Orly Yadid-Pecht

Abstract:

The continual demands for increasing resolution and dynamic range in complimentary metal-oxide semiconductor (CMOS) image sensors have resulted in exponential increases in the amount of data that need to be read out of an image sensor, and existing readouts cannot keep up with this demand. Interesting approaches such as sparse and burst readouts have been proposed and show promise, but at considerable trade-offs in other specifications. To this end, we have begun designing and evaluating various readout topologies centered around an attempt to parallelize the sensor readout. In this paper, we have designed, simulated, and started testing a light-controlled oscillator topology with dual column and row readouts. We expect the parallel readout structure to offer greater speed and alleviate the trade-off typical in this topology, where slow pixels present a major framerate bottleneck.

Keywords: CMOS image sensors, high-speed capture, wide dynamic range, light controlled oscillator.

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Authors: Gianluca Cornetta, David J. Santos, Balwant Godara

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A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee.

Keywords: Current Reuse, IEEE 802.15.4 (ZigBee), Low NoiseAmplifiers, Wireless Sensor Networks.

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Authors: Somaye Abdollahi Pour, Mohsen Saneei

Abstract:

This paper describes a novel monitoring scheme to minimize total active power in digital circuits depend on the demand frequency, by adjusting automatically both supply voltage and threshold voltages based on circuit operating conditions such as temperature, process variations, and desirable frequency. The delay monitoring results, will be control and apply so as to be maintained at the minimum value at which the chip is able to operate for a given clock frequency. Design details of power monitor are examined using simulation framework in 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 40 μW for 32nm technology; moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop. This design provides up to 40% reduction in power consumption in active mode.

Keywords: active mode, delay monitor, body biasing, VDD scaling, low power.

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Authors: V. Suresh Babu, Haseena P. S., Varun P. Gopi, M. R. Baiju

Abstract:

In this paper a scheme is proposed for generating a programmable current reference which can be implemented in the CMOS technology. The current can be varied over a wide range by changing an external voltage applied to one of the control gates of FGMOS (Floating Gate MOSFET). For a range of supply voltages and temperature, CMOS current reference is found to be dependent, this dependence is compensated by subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is found to improve with the use of FGMOS. Mathematical analysis of the proposed circuit is done to establish supply voltage and temperature independence. Simulation and performance evaluation of the proposed current reference circuit is done using TANNER EDA Tools. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The proposed current reference can operate down to 0.9 V supply.

Keywords: Floating Gate MOSFET, current reference, self bias scheme, temperature independency, supply voltage independency.

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Authors: Yibo Fan, Takeshi Ikenaga, Yukiyasu Tsunoo, Satoshi Goto

Abstract:

This paper proposes a low-cost reconfigurable architecture for AES algorithm. The proposed architecture separates SubBytes and MixColumns into two parallel data path, and supports different bit-width operation for this two data path. As a result, different number of S-box can be supported in this architecture. The throughput and power consumption can be adjusted by changing the number of S-box running in this design. Using the TSMC 0.18μm CMOS standard cell library, a very low-cost implementation of 7K Gates is obtained under 182MHz frequency. The maximum throughput is 360Mbps while using 4 S-Box simultaneously, and the minimum throughput is 114Mbps while only using 1 S-Box

Keywords: AES, Reconfigurable architecture, low cost

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Authors: Mohsen Bagheri, Ahmad Afifi

Abstract:

This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on Instrumentation amplifier and it is useful for reducing offset In Wheatstone Bridge. The obtained gain is 645 with 1μv/°c Equivalent drift and 1.58mw power consumption. A Schmitt trigger and multiplexer circuit control output node. a high speed counter is designed in this work .the proposed circuit is designed and simulated In 0.18μm CMOS technology with 1.8v power supply.

Keywords: Piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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Authors: Lei Yao, Jia Hao Cheong, Rui-Feng Xue, Minkyu Je

Abstract:

A closed-loop controlled wireless power transmission circuit block for implantable biomedical applications is described in this paper. The circuit consists of one front-end rectifier, power management sub-block including bandgap reference and low drop-out regulators (LDOs) as well as transmission power detection / feedback circuits. Simulation result shows that the front-end rectifier achieves 80% power efficiency with 750-mV single-end peak-to-peak input voltage and 1.28-V output voltage under load current of 4 mA. The power management block can supply 1.8mA average load current under 1V consuming only 12μW power, which is equivalent to 99.3% power efficiency. The wireless power transmission block described in this paper achieves a maximum power efficiency of 80%. The wireless power transmission circuit block is designed and implemented using UMC 65-nm CMOS/RF process. It occupies 1 mm × 1.2 mm silicon area.

Keywords: Implantable biomedical devices, wireless power transfer, LDO, rectifier, closed-loop power control

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Authors: S. M. Abbas, M. A. Hannan, S. A. Samad, A. Hussain

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This paper presented a modified efficient inductive powering link based on ASK modulator and proposed efficient class- E power amplifier. The design presents the external part which is located outside the body to transfer power and data to the implanted devices such as implanted Microsystems to stimulate and monitoring the nerves and muscles. The system operated with low band frequency 10MHZ according to industrial- scientific – medical (ISM) band to avoid the tissue heating. For external part, the modulation index is 11.1% and the modulation rate 7.2% with data rate 1 Mbit/s assuming Tbit = 1us. The system has been designed using 0.35-μm fabricated CMOS technology. The mathematical model is given and the design is simulated using OrCAD P Spice 16.2 software tool and for real-time simulation, the electronic workbench MULISIM 11 has been used.

Keywords: Implanted devices, ASK techniques, Class-E power amplifier, Inductive powering and low-frequency ISM band.

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Authors: Padmanabhan Balasubramanian, Karthik Anantha

Abstract:

Structural representation and technology mapping of a Boolean function is an important problem in the design of nonregenerative digital logic circuits (also called combinational logic circuits). Library aware function manipulation offers a solution to this problem. Compact multi-level representation of binary networks, based on simple circuit structures, such as AND-Inverter Graphs (AIG) [1] [5], NAND Graphs, OR-Inverter Graphs (OIG), AND-OR Graphs (AOG), AND-OR-Inverter Graphs (AOIG), AND-XORInverter Graphs, Reduced Boolean Circuits [8] does exist in literature. In this work, we discuss a novel and efficient graph realization for combinational logic circuits, represented using a NAND-NOR-Inverter Graph (NNIG), which is composed of only two-input NAND (NAND2), NOR (NOR2) and inverter (INV) cells. The networks are constructed on the basis of irredundant disjunctive and conjunctive normal forms, after factoring, comprising terms with minimum support. Construction of a NNIG for a non-regenerative function in normal form would be straightforward, whereas for the complementary phase, it would be developed by considering a virtual instance of the function. However, the choice of best NNIG for a given function would be based upon literal count, cell count and DAG node count of the implementation at the technology independent stage. In case of a tie, the final decision would be made after extracting the physical design parameters. We have considered AIG representation for reduced disjunctive normal form and the best of OIG/AOG/AOIG for the minimized conjunctive normal forms. This is necessitated due to the nature of certain functions, such as Achilles- heel functions. NNIGs are found to exhibit 3.97% lesser node count compared to AIGs and OIG/AOG/AOIGs; consume 23.74% and 10.79% lesser library cells than AIGs and OIG/AOG/AOIGs for the various samples considered. We compare the power efficiency and delay improvement achieved by optimal NNIGs over minimal AIGs and OIG/AOG/AOIGs for various case studies. In comparison with functionally equivalent, irredundant and compact AIGs, NNIGs report mean savings in power and delay of 43.71% and 25.85% respectively, after technology mapping with a 0.35 micron TSMC CMOS process. For a comparison with OIG/AOG/AOIGs, NNIGs demonstrate average savings in power and delay by 47.51% and 24.83%. With respect to device count needed for implementation with static CMOS logic style, NNIGs utilize 37.85% and 33.95% lesser transistors than their AIG and OIG/AOG/AOIG counterparts.

Keywords: AND-Inverter Graph, OR-Inverter Graph, DirectedAcyclic Graph, Low power design, Delay optimization.

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Authors: Jianping Hu, Xiaolei Sheng

Abstract:

This paper introduces an adiabatic register file based on two-phase CPAL (Complementary Pass-Transistor Adiabatic Logic circuits) with power-gating scheme, which can operate on a single-phase power clock. A 32×32 single-phase adiabatic register file with power-gating scheme has been implemented with TSMC 0.18μm CMOS technology. All the circuits except for the storage cells employ two-phase CPAL circuits, and the storage cell is based on the conventional memory one. The two-phase non-overlap power-clock generator with power-gating scheme is used to supply the proposed adiabatic register file. Full-custom layouts are drawn. The energy and functional simulations have been performed using the net-list extracted from their layouts. Compared with the traditional static CMOS register file, HSPICE simulations show that the proposed adiabatic register file can work very well, and it attains about 73% energy savings at 100 MHz.

Keywords: Low power, Register file, Complementarypass-transistor logic, Adiabatic logic, Single-phase power clock.

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Authors: O. Hashemipour, S. G. Nabavi

Abstract:

A high-linearity and high-speed current-mode sampleand- hold circuit is designed and simulated using a 0.25μm CMOS technology. This circuit design is based on low voltage and it utilizes a fully differential circuit. Due to the use of only two switches the switch related noise has been reduced. Signal - dependent -error is completely eliminated by a new zero voltage switching technique. The circuit has a linearity error equal to ±0.05μa, i.e. 12-bit accuracy with a ±160 μa differential output - input signal frequency of 5MHZ, and sampling frequency of 100 MHZ. Third harmonic is equal to –78dB.

Keywords: Zero-voltage-technique, MOS-resistor, OTA, Feedback-resistor.

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Authors: Guo-Ming Sung, Naga Raju Naik R.

Abstract:

Paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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Authors: Yong-Seo Koo, Jin-Woo Jung, Byung-Seok Lee, Dong-Su Kim, Yil-Suk Yang

Abstract:

In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides the sub-path of ESD discharge current. The TLP, HBM and MM testing are carried out to verify the ESD performance of the proposed devices, which are fabricated in 0.35um (Bipolar-CMOS-DMOS) BCDMOS process. The device has the robustness of 70mA/um that is higher about 60mA/um than the LVTSCR, approximately.

Keywords: ESD Protection, grounded gate NMOS (GGNMOS), low trigger voltage SCR (LVTSCR)

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Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

Abstract:

In this paper, the design of wide-swing constant transconductance (g_m) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (G_m) generated by the constant g_m bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in G_m with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the g_m variation is eventually concluded at between -3 % to 7 %. With the slight variation in the g_m value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S₂₁) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant g_m circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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Authors: Pardeep Singh, Sanjay Sharma, Parvinder S. Sandhu

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This work aims to reduce the read power consumption as well as to enhance the stability of the SRAM cell during the read operation. A new 10-transisor cell is proposed with a new read scheme to minimize the power consumption within the memory core. It has separate read and write ports, thus cell read stability is significantly improved. A 16Kb SRAM macro operating at 1V supply voltage is demonstrated in 65 nm CMOS process. Its read power consumption is reduced to 24% of the conventional design. The new cell also has lower leakage current due to its special bit-line pre-charge scheme. As a result, it is suitable for low-power mobile applications where power supply is restricted by the battery.

Keywords: A 16Kb 10T-SRAM, 4x Read-Power Reduction

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Authors: H. A. Majid, N. Razali, M. S. Sulaiman, A. K. A'ain

Abstract:

A new interface circuit for capacitive sensor is presented. This paper presents the design and simulation of soil moisture capacitive sensor interface circuit based on phase differential technique. The circuit has been designed and fabricated using MIMOS- 0.35"m CMOS technology. Simulation and test results show linear characteristic from 36 – 52 degree phase difference, representing 0 – 100% in soil moisture level. Test result shows the circuit has sensitivity of 0.79mV/0.10 phase difference, translating into resolution of 10% soil moisture level.

Keywords: Capacitive sensor, interface, phase differential.

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Authors: Jörg Lenhardt, Wolfram Schiffmann, Jörg Keller

Abstract:

While the feature sizes of recent Complementary Metal Oxid Semiconductor (CMOS) devices decrease the influence of static power prevails their energy consumption. Thus, power savings that benefit from Dynamic Frequency and Voltage Scaling (DVFS) are diminishing and temporal shutdown of cores or other microchip components become more worthwhile. A consequence of powering off unused parts of a chip is that the relative difference between idle and fully loaded power consumption is increased. That means, future chips and whole server systems gain more power saving potential through power-aware load balancing, whereas in former times this power saving approach had only limited effect, and thus, was not widely adopted. While powering off complete servers was used to save energy, it will be superfluous in many cases when cores can be powered down. An important advantage that comes with that is a largely reduced time to respond to increased computational demand. We include the above developments in a server power model and quantify the advantage. Our conclusion is that strategies from datacenters when to power off server systems might be used in the future on core level, while load balancing mechanisms previously used at core level might be used in the future at server level.

Keywords: Power efficiency, static power consumption, dynamic power consumption, CMOS.

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