Search results for: Semiconductor switch
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 270

Search results for: Semiconductor switch

270 The Analysis of Photoconductive Semiconductor Switch Operation in the Frequency of 10 GHz

Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour

Abstract:

A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.

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269 The Experience with SiC MOSFET and Buck Converter Snubber Design

Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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268 Efficiency Enhancement of PWM Controlled Water Electrolysis Cells

Authors: S.K. Mazloomi, Nasri b. Sulaiman

Abstract:

By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.

Keywords: Power switch, PWM, Semiconductor switch, Waterelectrolysis

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267 Compact Tunable 10 W picosecond Sourcebased on Yb-doped Fiber Amplification of Gain Switch Laser Diode

Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

Abstract:

A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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266 Design of Ultra Fast Polymer Electro-Optic waveguide Switch for Intelligent Optical Networks

Authors: S.Ponmalar, S.Sundaravadivelu

Abstract:

Traditional optical networks are gradually evolving towards intelligent optical networks due to the need for faster bandwidth provisioning, protection and restoration of the network that can be accomplished with devices like optical switch, add drop multiplexer and cross connects. Since dense wavelength multiplexing forms the physical layer for intelligent optical networking, the roll of high speed all optical switch is important. This paper analyzes such an ultra-high speed polymer electro-optic switch. The performances of the 2x2 optical waveguide switch with rectangular, triangular and trapezoidal grating profiles on various device parameters are analyzed. The simulation result shows that trapezoidal grating is the optimized structure which has the coupling length of 81μm and switching voltage of 11V for the operating wavelength of 1550nm. The switching time for this proposed switch is 0.47 picosecond. This makes the proposed switch to be an important element in the intelligent optical network.

Keywords: Intelligent optical network, optical switch, electrooptic effect, coupled mode theory, waveguide grating structures

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265 Evaluation of the Energy Consumption per Bit inBENES Optical Packet Switch

Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

Abstract:

We evaluate the average energy consumption per bit in Optical Packet Switches equipped with BENES switching fabric realized in Semiconductor Optical Amplifier (SOA) technology. We also study the impact that the Amplifier Spontaneous Emission (ASE) noise generated by a transmission system has on the power consumption of the BENES switches due to the gain saturation of the SOAs used to realize the switching fabric. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 2, 34 · 10-1 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Benes, Amplifier Spontaneous Emission Noise, EnergyConsumption, Optical Packet Switch.

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264 Performance Evaluation of the OCDM/WDM Technique for Optical Packet Switches

Authors: V. Eramo, L. Piazzo, M. Listanti, A. Germoni, A Cianfrani

Abstract:

The performance of the Optical Code Division Multiplexing/ Wavelength Division Multiplexing (WDM/OCDM) technique for Optical Packet Switch is investigated. The impact on the performance of the impairment due to both Multiple Access Interference and Beat noise is studied. The Packet Loss Probability due to output packet contentions is evaluated as a function of the main switch and traffic parameters when Gold coherent optical codes are adopted. The Packet Loss Probability of the OCDM/WDM switch can reach 10-9 when M=16 wavelengths, Gold code of length L=511 and only 24 wavelength converters are used in the switch.

Keywords: Optical code division multiplexing, bufferless optical packet switch, performance evaluation.

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263 A Novel Single-Wavelength All-Optical Flip-Flop Employing Single SOA-MZI

Authors: H. Kaatuzian, M. Sedghi, S. Khatami

Abstract:

In this paper, by exploiting a single semiconductor optical amplifier-Mach Zehnder Interferometer (SOA-MZI), an integratable all-optical flip-flop (AOFF) is proposed. It is composed of a SOA-MZI with a bidirectional coupler at the output. Output signals of both bar and crossbar of the SOA-MZI is fed back to SOAs located in the arms of the Mach-Zehnder Interferometer (MZI). The injected photon-rates to the SOAs are modulated by feedback signals in order to form optical flip-flop. According to numerical analysis, Gaussian optical pulses with the energy of 15.2 fJ and 20 ps duration with the full width at half-maximum criterion, can switch the states of the SR-AOFF. Also simulation results show that the SR-AOFF has the contrast ratio of 8.5 dB between two states with the transition time of nearly 20 ps.

Keywords: All Optical, Flip-Flop, Mach-Zehnder Interferometer (MZI), Semiconductor Optical Amplifier (SOA).

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262 Optimum Design of an 8x8 Optical Switch with Thermal Compensated Mechanisms

Authors: Tien-Tung Chung, Chin-Te Lin, Chung-Yun Lee, Kuang-Chao Fan, Shou-Heng Chen

Abstract:

This paper studies the optimum design for reducing optical loss of an 8x8 mechanical type optical switch due to the temperature change. The 8x8 optical switch is composed of a base, 8 input fibers, 8 output fibers, 3 fixed mirrors and 17 movable mirrors. First, an innovative switch configuration is proposed with thermal-compensated design. Most mechanical type optical switches have a disadvantage that their precision and accuracy are influenced by the ambient temperature. Therefore, the thermal-compensated design is to deal with this situation by using materials with different thermal expansion coefficients (α). Second, a parametric modeling program is developed to generate solid models for finite element analysis, and the thermal and structural behaviors of the switch are analyzed. Finally, an integrated optimum design program, combining Autodesk Inventor Professional software, finite element analysis software, and genetic algorithms, is developed for improving the thermal behaviors that the optical loss of the switch is reduced. By changing design parameters of the switch in the integrated design program, the final optimum design that satisfies the design constraints and specifications can be found.

Keywords: Optical switch, finite element analysis, thermal-compensated design, optimum design.

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261 Structural Simulation of a 4H-Sic Based Optically Controlled Thyristor Using a GaAs Based Optically Triggered Power Transistor and Its Application to DC-DC Boost Converter

Authors: Srikanta Bose, S.K. Mazumder

Abstract:

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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260 Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers

Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

Abstract:

A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: High voltage, IGBT, Solid states switch.

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259 Evaluation of Power Consumption of Spanke Optical Packet Switch

Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

Abstract:

The power consumption of an Optical Packet Switch equipped with SOA technology based Spanke switching fabric is evaluated. Sophisticated analytical models are introduced to evaluate the power consumption versus the offered traffic, the main switch parameters, and the used device characteristics. The impact of Amplifier Spontaneous Emission (ASE) noise generated by a transmission system on the power consumption is investigated. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 5, 07 · 10-2 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Spanke, Amplifier Spontaneous Emission Noise, Power Consumption, Optical Packet Switch.

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258 Electrotechnology for Silicon Refining: Plasma Generator and Arc Furnace: Installations and Theoretical Base

Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

Abstract:

The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.

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257 A Single Phase ZVT-ZCT Power Factor Correction Boost Converter

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, a single phase soft switched Zero Voltage Transition and Zero Current Transition (ZVT-ZCT) Power Factor Correction (PFC) boost converter is proposed. In the proposed PFC converter, the main switch turns on with ZVT and turns off with ZCT without any additional voltage or current stresses. Auxiliary switch turns on and off with zero current switching (ZCS). Also, the main diode turns on with zero voltage switching (ZVS) and turns off with ZCS. The proposed converter has features like low cost, simple control and structure. The output current and voltage are controlled by the proposed PFC converter in wide line and load range. The theoretical analysis of converter is clarified and the operating steps are given in detail. The simulation results of converter are obtained for 500 W and 100 kHz. It is observed that the semiconductor devices operate with soft switching (SS) perfectly. So, the switching power losses are minimum. Also, the proposed converter has 0.99 power factor with sinusoidal current shape.

Keywords: Power factor correction, zero-voltage transition, zero-current transition, soft switching.

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256 A Soft Switching PWM DC-DC Boost Converter with Increased Efficiency by Using ZVT-ZCT Techniques

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: Active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition.

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255 The Implementation of Remote Automation Execution Agent over ACL on QOS POLICY Based System

Authors: Hazly Amir, Roime Puniran

Abstract:

This paper will present the implementation of QoS policy based system by utilizing rules on Access Control List (ACL) over Layer 3 (L3) switch. Also presented is the architecture on that implementation; the tools being used and the result were gathered. The system architecture has an ability to control ACL rules which are installed inside an external L3 switch. ACL rules used to instruct the way of access control being executed, in order to entertain all traffics through that particular switch. The main advantage of using this approach is that the single point of failure could be prevented when there are any changes on ACL rules inside L3 switches. Another advantage is that the agent could instruct ACL rules automatically straight away based on the changes occur on policy database without configuring them one by one. Other than that, when QoS policy based system was implemented in distributed environment, the monitoring process can be synchronized easily due to the automate process running by agent over external policy devices.

Keywords: QOS, ACL, L3 Switch.

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254 Synchronization of Semiconductor Laser Networks

Authors: R. M. López-Gutiérrez, L. Cardoza-Avendaño, H. Cervantes-De Ávila, J. A. Michel-Macarty, C. Cruz-Hernández, A. Arellano-Delgado, R. Carmona-Rodríguez

Abstract:

In this paper, synchronization of multiple chaotic semiconductor lasers is achieved by appealing to complex system theory. In particular, we consider dynamical networks composed by semiconductor laser, as interconnected nodes, where the interaction in the networks are defined by coupling the first state of each node. An interest case is synchronized with master-slave configuration in star topology. Nodes of these networks are modeled for the laser and simulate by Matlab. These results are applicable to private communication.

Keywords: Synchronization, chaotic laser, network.

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253 Yield Prediction Using Support Vectors Based Under-Sampling in Semiconductor Process

Authors: Sae-Rom Pak, Seung Hwan Park, Jeong Ho Cho, Daewoong An, Cheong-Sool Park, Jun Seok Kim, Jun-Geol Baek

Abstract:

It is important to predict yield in semiconductor test process in order to increase yield. In this study, yield prediction means finding out defective die, wafer or lot effectively. Semiconductor test process consists of some test steps and each test includes various test items. In other world, test data has a big and complicated characteristic. It also is disproportionably distributed as the number of data belonging to FAIL class is extremely low. For yield prediction, general data mining techniques have a limitation without any data preprocessing due to eigen properties of test data. Therefore, this study proposes an under-sampling method using support vector machine (SVM) to eliminate an imbalanced characteristic. For evaluating a performance, randomly under-sampling method is compared with the proposed method using actual semiconductor test data. As a result, sampling method using SVM is effective in generating robust model for yield prediction.

Keywords: Yield Prediction, Semiconductor Test Process, Support Vector Machine, Under Sampling

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252 Average Current Estimation Technique for Reliability Analysis of Multiple Semiconductor Interconnects

Authors: Ki-Young Kim, Jae-Ho Lim, Deok-Min Kim, Seok-Yoon Kim

Abstract:

Average current analysis checking the impact of current flow is very important to guarantee the reliability of semiconductor systems. As semiconductor process technologies improve, the coupling capacitance often become bigger than self capacitances. In this paper, we propose an analytic technique for analyzing average current on interconnects in multi-conductor structures. The proposed technique has shown to yield the acceptable errors compared to HSPICE results while providing computational efficiency.

Keywords: current moment, interconnect modeling, reliability analysis, worst-case switching

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251 Identifying Key Success Factor For Supply Chain Management System in the Semiconductor Industry - A Focus Group Approach

Authors: T. P. Lu, B. N. Hwang, T. Z. Liou, Y. L. Lin

Abstract:

Developing a supply chain management (SCM) system is costly, but important. However, because of its complicated nature, not many of such projects are considered successful. Few research publications directly relate to key success factors (KSFs) for implementing a SCM system. Motivated by the above, this research proposes a hierarchy of KSFs for SCM system implementation in the semiconductor industry by using a two-step approach. First, the literature review indicates the initial hierarchy. The second step includes a focus group approach to finalize the proposed KSF hierarchy by extracting valuable experiences from executives and managers that actively participated in a project, which successfully establish a seamless SCM integration between the world's largest semiconductor foundry manufacturing company and the world's largest assembly and testing company. Future project executives may refer the resulting KSF hierarchy as a checklist for SCM system implementation in semiconductor or related industries.

Keywords: Focus group, key success factors, supply chain management, semiconductor industry.

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250 Determination of Optical Constants of Semiconductor Thin Films by Ellipsometry

Authors: Aïssa Manallah, Mohamed Bouafia

Abstract:

Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software.

Keywords: Ellipsometry, optical constants, semiconductors, thin films.

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249 An Android Geofencing App for Autonomous Remote Switch Control

Authors: Jamie Wong, Daisy Sang, Chang-Shyh Peng

Abstract:

Geofence is a virtual fence defined by a preset physical radius around a target location. Geofencing App provides location-based services which define the actionable operations upon the crossing of a geofence. Geofencing requires continual location tracking, which can consume noticeable amount of battery power. Additionally, location updates need to be frequent and accurate or order so that actions can be triggered within an expected time window after the mobile user navigate through the geofence. In this paper, we build an Android mobile geofencing Application to remotely and autonomously control a power switch.

Keywords: Location based service, geofence, autonomous, remote switch.

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248 Mechanical Modeling Issues in Optimization of Dynamic Behavior of RF MEMS Switches

Authors: Suhas K, Sripadaraja K

Abstract:

This paper details few mechanical modeling and design issues of RF MEMS switches. We concentrate on an electrostatically actuated broad side series switch; surface micromachined with a crab leg membrane. The same results are extended to any complex structure. With available experimental data and fabrication results, we present the variation in dynamic performance and compliance of the switch with reference to few design issues, which we find are critical in deciding the dynamic behavior of the switch, without compromise on the RF characteristics. The optimization of pull in voltage, transient time and resonant frequency with regard to these critical design parameters are also presented.

Keywords: Microelectromechanical Systems (MEMS), RadioFrequency MEMS, Modeling, Actuators

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247 Effective Scheduling of Semiconductor Manufacturing using Simulation

Authors: Ingy A. El-Khouly, Khaled S. El-Kilany, Aziz E. El-Sayed

Abstract:

The process of wafer fabrication is arguably the most technologically complex and capital intensive stage in semiconductor manufacturing. This large-scale discrete-event process is highly reentrant, and involves hundreds of machines, restrictions, and processing steps. Therefore, production control of wafer fabrication facilities (fab), specifically scheduling, is one of the most challenging problems that this industry faces. Dispatching rules have been extensively applied to the scheduling problems in semiconductor manufacturing. Moreover, lot release policies are commonly used in this manufacturing setting to further improve the performance of such systems and reduce its inherent variability. In this work, simulation is used in the scheduling of re-entrant flow shop manufacturing systems with an application in semiconductor wafer fabrication; where, a simulation model has been developed for the Intel Five-Machine Six Step Mini-Fab using the ExtendTM simulation environment. The Mini-Fab has been selected as it captures the challenges involved in scheduling the highly re-entrant semiconductor manufacturing lines. A number of scenarios have been developed and have been used to evaluate the effect of different dispatching rules and lot release policies on the selected performance measures. Results of simulation showed that the performance of the Mini-Fab can be drastically improved using a combination of dispatching rules and lot release policy.

Keywords: Dispatching rules, lot release policy, re-entrant flowshop, semiconductor manufacturing.

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246 A Spatial Point Pattern Analysis to Recognize Fail Bit Patterns in Semiconductor Manufacturing

Authors: Youngji Yoo, Seung Hwan Park, Daewoong An, Sung-Shick Kim, Jun-Geol Baek

Abstract:

The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.

Keywords: Semiconductor, wafer bin map (WBM), feature extraction, spatial point patterns, contour map.

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245 Monitoring and Fault-Recovery Capacity with Waveguide Grating-based Optical Switch over WDM/OCDMA-PON

Authors: Yao-Tang Chang, Chuen-Ching Wang, Shu-Han Hu

Abstract:

In order to implement flexibility as well as survivable capacities over passive optical network (PON), a new automatic random fault-recovery mechanism with array-waveguide-grating based (AWG-based) optical switch (OSW) is presented. Firstly, wavelength-division-multiplexing and optical code-division multiple-access (WDM/OCDMA) scheme are configured to meet the various geographical locations requirement between optical network unit (ONU) and optical line terminal (OLT). The AWG-base optical switch is designed and viewed as central star-mesh topology to prohibit/decrease the duplicated redundant elements such as fiber and transceiver as well. Hence, by simple monitoring and routing switch algorithm, random fault-recovery capacity is achieved over bi-directional (up/downstream) WDM/OCDMA scheme. When error of distribution fiber (DF) takes place or bit-error-rate (BER) is higher than 10-9 requirement, the primary/slave AWG-based OSW are adjusted and controlled dynamically to restore the affected ONU groups via the other working DFs immediately.

Keywords: Random fault recovery mechanism, Array-waveguide-grating based optical switch (AWG- based OSW), wavelength-division-multiplexing and optical code-divisionmultiple-access (WDM/ OCDMA)

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244 130 nm CMOS Mixer and VCO for 2.4 GHz Low-power Wireless Personal Area Networks

Authors: Gianluca Cornetta, David J. Santos

Abstract:

This paper describes a 2.4 GHz passive switch mixer and a 5/2.5 GHz voltage-controlled negative Gm oscillator (VCO) with an inversion-mode MOS varactor. Both circuits are implemented using a 1P8M 0.13 μm process. The switch mixer has an input referred 1 dB compression point of -3.89 dBm and a conversion gain of -0.96 dB when the local oscillator power is +2.5 dBm. The VCO consumes only 1.75 mW, while drawing 1.45 mA from a 1.2 V supply voltage. In order to reduce the passives size, the VCO natural oscillation frequency is 5 GHz. A clocked CMOS divideby- two circuit is used for frequency division and quadrature phase generation. The VCO has a -109 dBc/Hz phase noise at 1 MHz frequency offset and a 2.35-2.5 GHz tuning range (after the frequency division), thus complying with ZigBee requirements.

Keywords: Switch Mixers, Varactors, IEEE 802.15.4 (ZigBee), Direct Conversion Receiver, Wireless Sensor Networks.

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243 Performance Analysis of OQSMS and MDDR Scheduling Algorithms for IQ Switches

Authors: K. Navaz, Kannan Balasubramanian

Abstract:

Due to the increasing growth of internet users, the emerging applications of multicast are growing day by day and there is a requisite for the design of high-speed switches/routers. Huge amounts of effort have been done into the research area of multicast switch fabric design and algorithms. Different traffic scenarios are the influencing factor which affect the throughput and delay of the switch. The pointer based multicast scheduling algorithms are not performed well under non-uniform traffic conditions. In this work, performance of the switch has been analyzed by applying the advanced multicast scheduling algorithm OQSMS (Optimal Queue Selection Based Multicast Scheduling Algorithm), MDDR (Multicast Due Date Round-Robin Scheduling Algorithm) and MDRR (Multicast Dual Round-Robin Scheduling Algorithm). The results show that OQSMS achieves better switching performance than other algorithms under the uniform, non-uniform and bursty traffic conditions and it estimates optimal queue in each time slot so that it achieves maximum possible throughput.

Keywords: Multicast, Switch, Delay, Scheduling.

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242 An Exploratory Study Regarding the Effects of Auditor Switch, Auditee’s Industry, and Auditee’s Location on Audit Fees in Australia

Authors: Ashkan Mirzay Fashami

Abstract:

This study examines the effects of auditor switch, auditee’s industry, and auditee’s location on audit fees in Australia. It uses fee data of Australian Securities Exchange 500 companies, considering all industry classifications throughout the country from 2006 until 2016. Main findings show that auditor switch does not affect audit fees. However, auditee’s industry affects audit fees. This effect occurs in information technology, financials, energy, and materials sectors among the top 500 companies. Financials, energy, and materials sectors face a fee rise, whereas information technology has a fee cut. The extent of fee changes is different among various industries, wherein the financial sector has the highest increase. Further, auditee’s location affects audit fees. Top 500 companies in Hobart, Perth, and Brisbane face a fee reduction, wherein the highest cut is in Hobart. Further analysis suggests that the Australian audit market is being increasingly concentrated in the hands of the Big Four audit firms.

Keywords: Audit fee, auditor switch, Australia, industry, location.

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241 Study of a Fabry-Perot Resonator

Authors: F. Hadjaj, A. Belghachi, A. Halmaoui, M. Belhadj, H. Mazouz

Abstract:

A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.

Keywords: Fabry-Perot Resonator, laser diode.

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