Search results for: oil breakdown voltage
973 Breakdown Voltage Measurement of High Voltage Transformers Oils Using an Active Microwave Resonator Sensor
Authors: Ahmed A. Al-Mudhafar, Ali A. Abduljabar, Hayder Jawad Albattat
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This work suggests a microwave resonator sensor (MRS) device for measuring the oil’s breakdown voltage of high voltage transformers. A precise high-sensitivity sensor is designed and manufactured based on a microstrip split ring resonator (SRR). To improve the sensor sensitivity, a radio frequency (RF) amplifier of 30 dB gain is linked through a transmission line of 50Ω. The sensor operates at a microwave band (L) with a quality factor of 1.35 × 105 when it is loaded with an empty tube. In this work, the sensor has been tested with three samples of high voltage transformer oil of different ages (new, middle, and damaged) where the quality factor differs with each sample. A mathematical model was built to calculate the breakdown voltage of the transformer oils and the accuracy of the results was higher than 90%.
Keywords: Active resonator sensor, oil breakdown voltage, transformers oils, quality factor.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 359972 Spark Breakdown Voltage and Surface Degradation of Multiwalled Carbon Nanotube Electrode Surfaces
Authors: M. G. Rostedt, M. J. Hall, L. Shi, R. D. Matthews
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Silicon substrates coated with multiwalled carbon nanotubes (MWCNTs) were experimentally investigated to determine spark breakdown voltages relative to uncoated surfaces, the degree of surface degradation associated with the spark discharge, and techniques to minimize the surface degradation. The results may be applicable to instruments or processes that use MWCNT as a means of increasing local electric field strength and where spark breakdown is a possibility that might affect the devices’ performance or longevity. MWCNTs were shown to reduce the breakdown voltage of a 1mm gap in air by 30-50%. The relative decrease in breakdown voltage was maintained over gap distances of 0.5 to 2mm and gauge pressures of 0 to 4 bar. Degradation of the MWCNT coated surfaces was observed. Several techniques to improve durability were investigated. These included: chromium and gold-palladium coatings, tube annealing, and embedding clusters of MWCNT in a ceramic matrix.
Keywords: Ionization sensor, spark, nanotubes, electrode, breakdown.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2416971 Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design
Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu
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In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).
Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1020970 Influence of Axial Magnetic Field on the Electrical Breakdown and Secondary Electron Emission in Plane-Parallel Plasma Discharge
Authors: Sabah I. Wais, Raghad Y. Mohammed, Sedki O. Yousif
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The influence of axial magnetic field (B=0.48 T) on the variation of ionization efficiency coefficient h and secondary electron emission coefficient g with respect to reduced electric field E/P is studied at a new range of plane-parallel electrode spacing (0< d< 20 cm) and different nitrogen working pressure between 0.5-20 Pa. The axial magnetic field is produced from an inductive copper coil of radius 5.6 cm. The experimental data of breakdown voltage is adopted to estimate the mean Paschen curves at different working features. The secondary electron emission coefficient is calculated from the mean Paschen curve and used to determine the minimum breakdown voltage. A reduction of discharge voltage of about 25% is investigated by the applied of axial magnetic field. At high interelectrode spacing, the effect of axial magnetic field becomes more significant for the obtained values of h but it was less for the values of g.Keywords: Paschen curve, Townsend coefficient, Secondaryelectron emission, Magnetic field, Minimum breakdown voltage.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2606969 Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs
Authors: Shibesh Dutta, Sivaramakrishnan R., Sundar Gopalan, Balakrishnan Shankar
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MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.Keywords: breakdown, MOSCAP, voltage stress.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1430968 An Investigation on Vegetable Oils as Potential Insulating Liquid
Authors: C. Kocatepe, E. Taslak, C. F. Kumru, O. Arıkan
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While choosing insulating oil, characteristic features such as thermal cooling, endurance, efficiency and being environment-friendly should be considered. Mineral oils are referred as petroleum-based oil. In this study, vegetable oils investigated as an alternative insulating liquid to mineral oil. Dissipation factor, breakdown voltage, relative dielectric constant and resistivity changes with the frequency and voltage of mineral, rapeseed and nut oils were measured. Experimental studies were performed according to ASTM D924 and IEC 60156 standards.Keywords: Breakdown voltage, dielectric dissipation factor, mineral oil, vegetable oils.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2591967 A New Empirical Expression of the Breakdown Voltage for Combined Variations of Temperature and Pressure
Authors: Elyse Sili, Jean Pascal Cambronne
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In aircraft applications, according to the nature of electrical equipment its location may be in unpressurized area or very close to the engine; thus, the environmental conditions may change from atmospheric pressure to less than 100 mbar, and the temperature may be higher than the ambient one as in most real working conditions of electrical equipment. Then, the classical Paschen curve has to be replotted since these parameters may affect the discharge ignition voltage. In this paper, we firstly investigate the domain of validity of two corrective expressions on the Paschen-s law found in the literature, in case of changing the air environment and known as Peek and Dunbar corrections. Results show that these corrections are no longer valid for combined variation of temperature and pressure. After that, a new empirical expression for breakdown voltage is proposed and is validated in the case of combined variations of temperature and pressure.Keywords: Gas breakdown, gas density, Paschen curve, temperature effects
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4869966 Breakdown of LDPE Film under Heavy Water Absorption
Authors: Eka PW, T. Okazaki, Y. Murakami, N., Hozumi, M. Nagao
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The breakdown strength characteristic of Low Density Polyethylene films (LDPE) under DC voltage application and the effect of water absorption have been studied. Mainly, our experiment was investigated under two conditions; dry and heavy water absorption. Under DC ramp voltage, the result found that the breakdown strength under heavy water absorption has a lower value than dry condition. In order to clarify the effect, the temperature rise of film was observed using non contact thermograph until the occurrence of the electrical breakdown and the conduction current of the sample was also measured in correlation with the thermograph measurement. From the observations, it was shown that under the heavy water absorption, the hot spot in the samples appeared at lower voltage. At the same voltage the temperature of the hot spot and conduction current was higher than that under the dry condition. The measurement result has a good correlation between the existence of a critical field for conduction current and thermograph observation. In case of the heavy water absorption, the occurrence of the threshold field was earlier than the dry condition as result lead to higher of conduction current and the temperature rise appears after threshold field was significantly increased in increasing of field. The higher temperature rise was caused by the higher current conduction as the result the insulation leads to breakdown to the lower field application.Keywords: Low density polyethylene, heavy water absorption, conduction current, temperature rise.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1872965 Seasonal Based Pollution Performance of 11kV and 33kV Silicon Composite Insulators
Authors: N. Sumathi, R. Srinivasa Rao
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This paper presents the experimental results of 11 kV and 33 kV silicon composite insulators under artificial salt and urea polluted conditions. The tests were carried out under different seasons like summer, winter, and monsoon. The artificial pollution is prepared by properly dissolving the salt and urea in the water. The prepared salt and urea pollutions are sprayed on the insulators and dried up for sufficiently large time. The process is continued until a uniform layer is formed on the surface of insulator. For each insulator rating, four samples were tested. The maximum leakage current and breakdown voltage were measured. From experimental data, performance of test specimen is evaluated by comparing breakdown voltage and leakage current during different seasons when exposed to salt and urea polluted conditions. From these results the performance of the insulators can be predicted when they are installed in industrial, agricultural, and coastal areas. The experimental tests were carried out in the High Voltage laboratory using two stage cascade transformer having the rating of 1000 kVA, 500 kV.Keywords: Silicon composite insulators, Urea pollution, Leakage current, Breakdown voltage, salt pollution, artificial pollution.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1865964 Analysis and Circuit Modeling of APDs
Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar
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In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.Keywords: Optical communication systems (OCS), Circuit modeling, breakdown voltage, SAGCM APD
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2060963 Artificial Accelerated Ageing Test of 22 kVXLPE Cable for Distribution System Applications in Thailand
Authors: A. Rawangpai, B. Maraungsri, N. Chomnawang
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This paper presents the experimental results on artificial ageing test of 22 kV XLPE cable for distribution system application in Thailand. XLPE insulating material of 22 kV cable was sliced to 60-70 μm in thick and was subjected to ac high voltage at 23 Ôùª C, 60 Ôùª C and 75 Ôùª C. Testing voltage was constantly applied to the specimen until breakdown. Breakdown voltage and time to breakdown were used to evaluate life time of insulating material. Furthermore, the physical model by J. P. Crine for predicts life time of XLPE insulating material was adopted as life time model and was calculated in order to compare the experimental results. Acceptable life time results were obtained from Crine-s model comparing with the experimental result. In addition, fourier transform infrared spectroscopy (FTIR) for chemical analysis and scanning electron microscope (SEM) for physical analysis were conducted on tested specimens.Keywords: Artificial accelerated ageing test, XLPE cable, distribution system, insulating material, life time, life time model
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3662962 Electrical Analysis of Corn Oil as an Alternative to Mineral Oil in Power Transformers
Authors: E. Taslak, C. Kocatepe, O. Arıkan, C. F. Kumru
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In insulation and cooling of power transformers various liquids are used. Mineral oils have wide availability and low cost. However, they have a poor biodegradability potential and lower fire point in comparison with other insulating liquids. Use of a liquid having high biodegradability is important due to environmental consideration. This paper investigates edible corn oil as an alternative to mineral oil. Various properties of mineral and corn oil like breakdown voltage, dissipation factor, relative dielectric constant, power loss and resistivity were measured according to different standards.Keywords: Breakdown voltage, corn oil, dissipation factor, mineral oil, power loss, relative dielectric constant, resistivity.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3165961 Highly Efficient Silicon Photomultiplier for Positron Emission Tomography Application
Authors: Fei Sun, Ning Duan, Guo-Qiang Lo
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A silicon photomultiplier (SiPM) was designed, fabricated and characterized. The SiPM was based on SACM (Separation of Absorption, Charge and Multiplication) structure, which was optimized for blue light detection in application of positron emission tomography (PET). The achieved SiPM array has a high geometric fill factor of 64% and a low breakdown voltage of about 22V, while the temperature dependence of breakdown voltage is only 17mV/°C. The gain and photon detection efficiency of the device achieved were also measured under illumination of light at 405nm and 460nm wavelengths. The gain of the device is in the order of 106. The photon detection efficiency up to 60% has been observed under 1.8V overvoltage.
Keywords: Photon Detection Efficiency, Positron Emission Tomography, Silicon Photomultiplier.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1724960 Optimal SSSC Placement to ATC Enhancing in Power Systems
Authors: Sh. Javadi, A. Alijani, A.H. Mazinan
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This paper reviews the optimization available transmission capability (ATC) of power systems using a device of FACTS named SSSC equipped with energy storage devices. So that, emplacement and improvement of parameters of SSSC will be illustrated. Thus, voltage magnitude constraints of network buses, line transient stability constraints and voltage breakdown constraints are considered. To help the calculations, a comprehensive program in DELPHI is provided, which is able to simulate and trace the parameters of SSSC has been installed on a specific line. Furthermore, the provided program is able to compute ATC, TTC and maximum value of their enhancement after using SSSC.Keywords: available transmission capability (ATC), total transmission capability (TTC), voltage constraints, stability constraints, FACTS, SSSC.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2031959 Modeling and Simulation of Dynamic Voltage Restorer for Mitigation of Voltage Sags
Authors: S. Ganesh, L. Raguraman, E. Anushya, J. krishnasree
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Voltage sags are the most common power quality disturbance in the distribution system. It occurs due to the fault in the electrical network or by the starting of a large induction motor and this can be solved by using the custom power devices such as Dynamic Voltage Restorer (DVR). In this paper DVR is proposed to compensate voltage sags on critical loads dynamically. The DVR consists of VSC, injection transformers, passive filters and energy storage (lead acid battery). By injecting an appropriate voltage, the DVR restores a voltage waveform and ensures constant load voltage. The simulation and experimental results of a DVR using MATLAB software shows clearly the performance of the DVR in mitigating voltage sags.
Keywords: Dynamic voltage restorer, Voltage sags, Power quality, Injection methods.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4272958 Appling Eyring-s Accelerated Life Testing Model to “Times to Breakdown“ of Insulating Fluid: A Combined Approach of an Accelerated and a Sequential Life Testing
Authors: D. I. De Souza, D. R. Fonseca, D. Kipper
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In this paper, the test purpose will be to assess whether or not the accelerated model proposed by Eyring will be able to translate results for the shape and scale parameters of an underlying Weibull model, obtained under two accelerating using conditions, to expected normal using condition results for these parameters. The product being analyzed is a new type of insulate fluid, and the accelerating factor is the voltage stresses applied to the fluid at two different levels (30KV and 40KV). The normal operating voltage is 25KV. In this case, it was possible to test the insulate fluid at normal voltage using condition. Both results for the two parameters of the Weibull model, obtained under normal using condition and translated from accelerated using conditions to normal conditions, will be compared to each other to assess the accuracy of the Eyring model when the accelerating factor is only the voltage stress.Keywords: Eyring Accelerated Model, Sequential Life Testing, Two-Parameter Weibull Distribution, Voltage Stresses.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2276957 Artificial Voltage-Controlled Capacitance and Inductance using Voltage-Controlled Transconductance
Authors: Mansour I. Abbadi, Abdel-Rahman M. Jaradat
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In this paper, a technique is proposed to implement an artificial voltage-controlled capacitance or inductance which can replace the well-known varactor diode in many applications. The technique is based on injecting the current of a voltage-controlled current source onto a fixed capacitor or inductor. Then, by controlling the transconductance of the current source by an external bias voltage, a voltage-controlled capacitive or inductive reactance is obtained. The proposed voltage-controlled reactance devices can be designed to work anywhere in the frequency spectrum. Practical circuits for the proposed voltage-controlled reactances are suggested and simulated.Keywords: voltage-controlled capacitance, voltage-controlled inductance, varactor diode, variable transconductance.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4816956 Static Voltage Stability Margin Enhancement Using SVC and TCSC
Authors: Mohammed Amroune, Hadi Sebaa, Tarek Bouktir
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Reactive power limit of power system is one of the major causes of voltage instability. The only way to save the system from voltage instability is to reduce the reactive power load or add additional reactive power to reaching the point of voltage collapse. In recent times, the application of FACTS devices is a very effective solution to prevent voltage instability due to their fast and very flexible control. In this paper, voltage stability assessment with SVC and TCSC devices is investigated and compared in the modified IEEE 30-bus test system. The fast voltage stability indicator (FVSI) is used to identify weakest bus and to assess the voltage stability of power system.
Keywords: SVC, TCSC, Voltage stability, Fast Voltage Stability Index (FVSI), Reactive power.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4062955 SCR-Based Advanced ESD Protection Device for Low Voltage Application
Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo
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This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).
Keywords: ESD, SCR, Holding voltage, Latch-up.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2878954 An Analytical Comparison between Open Loop, PID and Fuzzy Logic Based DC-DC Boost Convertor
Authors: Muhammad Mujtaba Asad, Razali Bin Hassan, Fahad Sherwani
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This paper explains about the voltage output for DC to DC boost converter between open loop, PID controller and fuzzy logic controller through Matlab Simulink. Simulink input voltage was set at 12V and the voltage reference was set at 24V. The analysis on the deviation of voltage resulted that the difference between reference voltage setting and the output voltage is always lower. Comparison between open loop, PID and FLC shows that, the open loop circuit having a bit higher on the deviation of voltage. The PID circuit boosts for FLC has a lesser deviation of voltage and proved that it is such a better performance on control the deviation of voltage during the boost mode.
Keywords: Boost Convertors, Power Electronics, PID, Fuzzy logic, Open loop.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3847953 A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage
Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo
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In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.Keywords: ESD, SCR, latch-up, power clamp, holding voltage.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 982952 Technique for Voltage Control in Distribution System
Authors: S. Thongkeaw, M. Boonthienthong
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This paper presents the techniques for voltage control in distribution system. It is integrated in the distribution management system. Voltage is an important parameter for the control of electrical power systems. The distribution network operators have the responsibility to regulate the voltage supplied to consumer within statutory limits. Traditionally, the On-Load Tap Changer (OLTC) transformer equipped with automatic voltage control (AVC) relays is the most popular and effective voltage control device. A static synchronous compensator (STATCOM) may be equipped with several controllers to perform multiple control functions. Static Var Compensation (SVC) is regulation slopes and available margins for var dispatch. The voltage control in distribution networks is established as a centralized analytical function in this paper.
Keywords: Voltage Control, Reactive Power, Distribution System.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 9494951 A High Precision Temperature Insensitive Current and Voltage Reference Generator
Authors: Kimberly Jane S. Uy, Patricia Angela Reyes-Abu, Wen Yaw Chung
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A high precision temperature insensitive current and voltage reference generator is presented. It is specifically developed for temperature compensated oscillator. The circuit, designed using MXIC 0.5um CMOS technology, has an operating voltage that ranges from 2.6V to 5V and generates a voltage of 1.21V and a current of 6.38 ӴA. It exhibits a variation of ±0.3nA for the current reference and a stable output for voltage reference as the temperature is varied from 0°C to 70°C. The power supply rejection ratio obtained without any filtering capacitor at 100Hz and 10MHz is -30dB and -12dB respectively.
Keywords: Current reference, voltage reference, threshold voltage, temperature compensation, mobility.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2339950 A Study on Unidirectional Analog Output Voltage Inverter for Capacitive Load
Authors: Sun-Ki Hong, Nam-HeeByeon, Jung-Seop Lee, Tae-Sam Kang
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For Common R or R-L load to apply arbitrary voltage, the bridge traditional inverters don’t have any difficulties by PWM method. However for driving some piezoelectric actuator, arbitrary voltage not a pulse but a steady voltage should be applied. Piezoelectric load is considered as R-C load and its voltage does not decrease even though the applied voltage decreases. Therefore it needs some special inverter with circuit that can discharge the capacitive energy. Especially for unidirectional arbitrary voltage driving like as sine wave, it becomes more difficult problem. In this paper, a charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator is proposed. The circuit has charging and discharging switches for increasing and decreasing output voltage. With the proposed simple circuit, the load voltage can have any unidirectional level with tens of bandwidth because the load voltage can be adjusted by switching the charging and discharging switch appropriately. The appropriateness is proved from the simulation of the proposed circuit.
Keywords: DC-DC converter, analog output voltage, sinusoidal drive, piezoelectric load, discharging circuit.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2510949 SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp
Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo
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In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.Keywords: ESD, SCR, holding voltage, stack, power clamp.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2053948 Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics
Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han
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This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.
Keywords: ESD (Electro-Static Discharge), SCR (Silicon Controlled Rectifier), holding Voltage.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3723947 On the Reliability of Low Voltage Network with Small Scale Distributed Generators
Authors: Rade M. Ciric, Nikola Lj.Rajakovic
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Since the 80s huge efforts have been made to utilize renewable energy sources to generate electric power. This paper reports some aspects of integration of the distributed generators into the low voltage distribution networks. An assessment of impact of the distributed generators on the reliability indices of low voltage network is performed. Results obtained from case study using low voltage network, are presented and discussed.Keywords: low voltage network, distributed generation, reliability indices
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1787946 A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics
Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo
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In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.Keywords: ESD, SCR, latch-up, power clamp, holding voltage.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 812945 Performance Enhancement of Analog Voltage Inverter with Adaptive Gain Control for Capacitive Load
Authors: Sun-Ki Hong, Yong-Ho Cho, Ki-Seok Kim, Tae-Sam Kang
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Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit.Keywords: Analog voltage inverter, Capacitive load, Gain control, DC-DC converter, Piezoelectric, Voltage waveform.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1744944 Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC
Authors: Yashvir Singh, Mayank Joshi
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A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.
Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.
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