Search results for: silicon nanowires
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 569

Search results for: silicon nanowires

269 Structure and Tribological Properties of Moisture Insensitivity Si Containing Diamond-Like Carbon Film

Authors: Mingjiang Dai, Qian Shi, Fang Hu, Songsheng Lin, Huijun Hou, Chunbei Wei

Abstract:

A diamond-like carbon (DLC) is considered as a promising protective film since its high hardness and excellent tribological properties. However, DLC films are very sensitive to the environmental condition, its friction coefficient could dramatic change in high humidity, therefore, limited their further application in aerospace, the watch industry, and micro/nano-electromechanical systems. Therefore, most studies focus on the low friction coefficient of DLC films at a high humid environment. However, this is out of satisfied in practical application. An important thing was ignored is that the DLC coated components are usually used in the diversed environment, which means its friction coefficient may evidently change in different humid condition. As a result, the invalidation of DLC coated components or even sometimes disaster occurred. For example, DLC coated minisize gears were used in the watch industry, and the customer may frequently transform their locations with different weather and humidity even in one day. If friction coefficient is not stable in dry and high moisture conditions, the watch will be inaccurate. Thus, it is necessary to investigate the stable tribological behavior of DLC films in various environments. In this study, a-C:H:Si films were deposited by multi-function magnetron sputtering system, containing one ion source device and a pair of SiC dual mid-frequent targets and two direct current Ti/C targets. Hydrogenated carbon layers were manufactured by sputtering the graphite target in argon and methane gasses. The silicon was doped in DLC coatings by sputtering silicon carbide targets and the doping content were adjusted by mid-frequent sputtering current. The microstructure of the film was characterized by Raman spectrometry, X-ray photoelectron spectroscopy, and transmission electron microscopy while its friction behavior under different humidity conditions was studied using a ball-on-disc tribometer. The a-C:H films with Si content from 0 to 17at.% were obtained and the influence of Si content on the structure and tribological properties under the relative humidity of 50% and 85% were investigated. Results show that the a-C:H:Si film has typical diamond-like characteristics, in which Si mainly existed in the form of Si, SiC, and SiO2. As expected, the friction coefficient of a-C:H films can be effectively changed after Si doping, from 0.302 to 0.176 in RH 50%. The further test shows that the friction coefficient value of a-C:H:Si film in RH 85% is first increase and then decrease as a function of Si content. We found that the a-C:H:Si films with a Si content of 3.75 at.% show a stable friction coefficient of 0.13 in different humidity environment. It is suggestion that the sp3/sp2 ratio of a-C:H films with 3.75 at.% Si was higher than others, which tend to form the silica-gel-like sacrificial layers during friction tests. Therefore, the films deliver stable low friction coefficient under controlled RH value of 50 and 85%.

Keywords: diamond-like carbon, Si doping, moisture environment, table low friction coefficient

Procedia PDF Downloads 341
268 New Iterative Algorithm for Improving Depth Resolution in Ionic Analysis: Effect of Iterations Number

Authors: N. Dahraoui, M. Boulakroune, D. Benatia

Abstract:

In this paper, the improvement by deconvolution of the depth resolution in Secondary Ion Mass Spectrometry (SIMS) analysis is considered. Indeed, we have developed a new Tikhonov-Miller deconvolution algorithm where a priori model of the solution is included. This is a denoisy and pre-deconvoluted signal obtained from: firstly, by the application of wavelet shrinkage algorithm, secondly by the introduction of the obtained denoisy signal in an iterative deconvolution algorithm. In particular, we have focused the light on the effect of the iterations number on the evolution of the deconvoluted signals. The SIMS profiles are multilayers of Boron in Silicon matrix.

Keywords: DRF, in-depth resolution, multiresolution deconvolution, SIMS, wavelet shrinkage

Procedia PDF Downloads 389
267 Simulation of I–V Characteristics of Lateral PIN Diode on Polysilicon Films

Authors: Abdelaziz Rabhi, Mohamed Amrani, Abderrazek Ziane, Nabil Belkadi, Abdelraouf Hocini

Abstract:

In this paper, a bedimensional simulation program of the electric characteristics of reverse biased lateral polysilicon PIN diode is presented. In this case we have numerically solved the system of partial differential equations formed by Poisson's equation and both continuity equations that take into account the effect of impact ionization. Therefore we will obtain the current-voltage characteristics (I-V) of the reverse-biased structure which may include the effect of breakdown.The geometrical model assumes that the polysilicon layer is composed by a succession of defined mean grain size crystallites, separated by lateral grain boundaries which are parallel to the metallurgic junction.

Keywords: breakdown, polycrystalline silicon, PIN, grain, impact ionization

Procedia PDF Downloads 343
266 Substrate Coupling in Millimeter Wave Frequencies

Authors: Vasileios Gerakis, Fontounasios Christos, Alkis Hatzopoulos

Abstract:

A study of the impact of metal guard rings on the coupling between two square metal pads is presented. The structure is designed over a bulk silicon substrate with epitaxial layer, so the coupling through the substrate is also involved. A lightly doped profile is adopted and is simulated by means of an electromagnetic simulator for various pad distances and different metal layers, assuming a 65 nm bulk CMOS technology. The impact of various guard ring design (geometrical) parameters is examined. Furthermore, the increase of isolation (resulting in reduction of the noise coupling) between the pads by cutting the ring, or by using multiple rings, is also analyzed. S parameters are used to compare the various structures.

Keywords: guard rings, metal pad coupling, millimeter wave frequencies, substrate noise,

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265 Influence of Silica Fume on Ultrahigh Performance Concrete

Authors: Vitoldas Vaitkevičius, Evaldas Šerelis

Abstract:

Silica fume, also known as microsilica (MS) or condensed silica fume is a by-product of the production of silicon metal or ferrosilicon alloys. Silica fume is one of the most effective pozzolanic additives which could be used for ultrahigh performance and other types of concrete. Despite the fact, however is not entirely clear, which amount of silica fume is most optimal for UHPC. Main objective of this experiment was to find optimal amount of silica fume for UHPC with and without thermal treatment, when different amount of quartz powder is substituted by silica fume. In this work were investigated four different composition of UHPC with different amount of silica fume. Silica fume were added 0, 10, 15 and 20% of cement (by weight) to UHPC mixture. Optimal amount of silica fume was determined by slump, viscosity, qualitative and quantitative XRD analysis and compression strength tests methods.

Keywords: compressive strength, silica fume, ultrahigh performance concrete, XRD

Procedia PDF Downloads 272
264 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100 nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As CMOS technology scaling down, Silicon oxide thickness (SiO2) become very thin (few Nano meters). When SiO2 is less than 3nm, gate direct tunneling (DT) leakage current becomes a dormant problem that impacts the transistor performance. Floating gate MOSFET (FGMOSFET) has been used in many low-voltage and low-power applications. Most of the available simulation models of FGMOSFET for analog circuit design does not account for gate DT current and there is no accurate analysis for the gate DT. It is a crucial to use an accurate mode in order to get a realistic simulation result that account for that DT impact on FGMOSFET performance effectively.

Keywords: CMOS transistor, direct-tunneling current, floating-gate, gate-leakage current, simulation model

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263 A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage

Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage

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262 Solar Cell Using Chemical Bath Deposited PbS:Bi3+ Films as Electron Collecting Layer

Authors: Melissa Chavez Portillo, Mauricio Pacio Castillo, Hector Juarez Santiesteban, Oscar Portillo Moreno

Abstract:

Chemical bath deposited PbS:Bi3+ as an electron collection layer is introduced between the silicon wafer and the Ag electrode the performance of the PbS heterojunction thin film solar thin film solar cells with 1 cm2 active area. We employed Bi-doping to transform it into an n-type semiconductor. The experimental results reveal that the cell response parameters depend critically on the deposition procedures in terms of bath temperature, deposition time. The device achieves an open-circuit voltage of 0.4 V. The simple and low-cost deposition method of PbS:Bi3+ films is promising for the fabrication.

Keywords: Bi doping, PbS, thin films, solar cell

Procedia PDF Downloads 486
261 Effects of the Ambient Temperature and the Defect Density on the Performance the Solar Cell (HIT)

Authors: Bouzaki Mohammed Moustafa, Benyoucef Boumediene, Benouaz Tayeb, Benhamou Amina

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The ambient temperature and the defects density in the Hetero-junction with Intrinsic Thin layers solar cells (HIT) strongly influence their performances. In first part, we presented the bands diagram on the front/back simulated solar cell based on a-Si: H / c-Si (p)/a-Si:h. In another part, we modeled the following layers structure: ZnO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(p)/Ag where we studied the effect of the ambient temperature and the defects density in the gap of the crystalline silicon layer on the performance of the heterojunction solar cell with intrinsic layer (HIT).

Keywords: heterojunction solar cell, solar cell performance, bands diagram, ambient temperature, defect density

Procedia PDF Downloads 480
260 Thermal Performance of a Pair of Synthetic Jets Equipped in Microchannel

Authors: J. Mohammadpour, G. E. Lau, S. Cheng, A. Lee

Abstract:

Numerical study was conducted using two synthetic jet actuators attached underneath a micro-channel. By fixing the oscillating frequency and diaphragm amplitude, the effects on the heat transfer within the micro-channel were investigated with two synthetic jets being in-phase and 180° out-of-phase at different orifice spacing. There was a significant benefit identified with two jets being 180° out-of-phase with each other at the orifice spacing of 2 mm. By having this configuration, there was a distinct pattern of vortex forming which disrupts the main channel flow as well as promoting thermal mixing at high velocity within the channel. Therefore, this configuration achieved higher cooling performance compared to the other cases studied in terms of the reduction in the maximum temperature and cooling uniformity in the silicon wafer.

Keywords: synthetic jets, microchannel, electronic cooling, computational fluid dynamics

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259 Optimal Design of Polymer Based Piezoelectric Actuator with Varying Thickness and Length Ratios

Authors: Vineet Tiwari, R. K. Dwivedi, Geetika Srivastava

Abstract:

Piezoelectric cantilevers are exploited for their use in sensors and actuators. In this study, a unimorph cantilever beam is considered as a study element with a piezoelectric polymer Polyvinylidene fluoride (PVDF) layer bonded to a substrate layer. The different substrates like polysilicon, stainless steel and silicon nitride are tried for the study. An effort has been made to optimize and study the effect of the various parameters of the device in order to achieve maximum tip deflection. The variation of the tip displacement of the cantilever with respect to the length ratio of the nonpiezoelectric layer to the piezoelectric layer has been studied. The electric response of this unimorph cantilever beam is simulated with the help of finite element analysis software COMSOL Multiphysics.

Keywords: actuators, cantilever, piezoelectric, sensors, PVDF

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258 Molecular Junctions between Graphene Strips: Electronic and Transport Properties

Authors: Adel Belayadi, Ahmed Mougari, Boualem Bourahla

Abstract:

Molecular junctions are currently considered a promising style in the miniaturization of electronic devices. In this contribution, we provide a tight-binding model to investigate the quantum transport properties across-molecular junctions sandwiched between 2D-graphene nanoribbons in the zigzag direction. We investigate, in particular, the effect of embedded atoms such as Gold and Silicon across the molecular junction. The results exhibit a resonance behavior in terms of incident Fermi levels, depending on the molecular junction type. Additionally, the transport properties under a perpendicular magnetic field exhibit an oscillation for the transmittance versus the magnetic field strength.

Keywords: molecular junction, 2D-graphene nanoribbons, quantum transport properties, magnetic field

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257 Miniaturization of Germanium Photo-Detectors by Using Micro-Disk Resonator

Authors: Haifeng Zhou, Tsungyang Liow, Xiaoguang Tu, Eujin Lim, Chao Li, Junfeng Song, Xianshu Luo, Ying Huang, Lianxi Jia, Lianwee Luo, Kim Dowon, Qing Fang, Mingbin Yu, Guoqiang Lo

Abstract:

Several Germanium photodetectors (PD) built on silicon micro-disks are fabricated on the standard Si photonics multiple project wafers (MPW) and demonstrated to exhibit very low dark current, satisfactory operation bandwidth and moderate responsivity. Among them, a vertical p-i-n Ge PD based on a 2.0 µm-radius micro-disk has a dark current of as low as 35 nA, compared to a conventional PD current of 1 µA with an area of 100 µm2. The operation bandwidth is around 15 GHz at a reverse bias of 1V. The responsivity is about 0.6 A/W. Microdisk is a striking planar structure in integrated optics to enhance light-matter interaction and construct various photonics devices. The disk geometries feature in strongly and circularly confining light into an ultra-small volume in the form of whispering gallery modes. A laser may benefit from a microdisk in which a single mode overlaps the gain materials both spatially and spectrally. Compared to microrings, micro-disk removes the inner boundaries to enable even better compactness, which also makes it very suitable for some scenarios that electrical connections are needed. For example, an ultra-low power (≈ fJ) athermal Si modulator has been demonstrated with a bit rate of 25Gbit/s by confining both photons and electrically-driven carriers into a microscale volume.In this work, we study Si-based PDs with Ge selectively grown on a microdisk with the radius of a few microns. The unique feature of using microdisk for Ge photodetector is that mode selection is not important. In the applications of laser or other passive optical components, microdisk must be designed very carefully to excite the fundamental mode in a microdisk in that essentially the microdisk usually supports many higher order modes in the radial directions. However, for detector applications, this is not an issue because the local light absorption is mode insensitive. Light power carried by all modes are expected to be converted into photo-current. Another benefit of using microdisk is that the power circulation inside avoids any introduction of the reflector. A complete simulation model with all involved materials taken into account is established to study the promise of microdisk structures for photodetector by using finite difference time domain (FDTD) method. By viewing from the current preliminary data, the directions to further improve the device performance are also discussed.

Keywords: integrated optical devices, silicon photonics, micro-resonator, photodetectors

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256 DNA Multiplier: A Design Architecture of a Multiplier Circuit Using DNA Molecules

Authors: Hafiz Md. Hasan Babu, Khandaker Mohammad Mohi Uddin, Nitish Biswas, Sarreha Tasmin Rikta, Nuzmul Hossain Nahid

Abstract:

Nanomedicine and bioengineering use biological systems that can perform computing operations. In a biocomputational circuit, different types of biomolecules and DNA (Deoxyribose Nucleic Acid) are used as active components. DNA computing has the capability of performing parallel processing and a large storage capacity that makes it diverse from other computing systems. In most processors, the multiplier is treated as a core hardware block, and multiplication is one of the time-consuming and lengthy tasks. In this paper, cost-effective DNA multipliers are designed using algorithms of molecular DNA operations with respect to conventional ones. The speed and storage capacity of a DNA multiplier are also much higher than a traditional silicon-based multiplier.

Keywords: biological systems, DNA multiplier, large storage, parallel processing

Procedia PDF Downloads 171
255 Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity

Authors: Jun-Geol Park, Kyoung-Il Do, Min-Ju Kwon, Kyung-Hyun Park, Yong-Seo Koo

Abstract:

In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V.

Keywords: ESD, SCR, trigger voltage, holding voltage

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254 Research on High Dielectric HfO₂ Stack Structure Applied to Field Effect Transistors

Authors: Kuan Yu Lin, Shih Chih Chen

Abstract:

This study focuses on the Al/HfO₂/Si/Al structure to explore the electrical properties of the structure. This experiment uses a radio frequency magnetron sputtering system to deposit high dielectric materials on p-type silicon substrates of 1~10 Ω-cm (100). Consider the hafnium dioxide film as a dielectric layer. Post-deposition annealing at 750°C in nitrogen atmosphere. Electron beam evaporation of metallic aluminum is then used to complete the top/bottom electrodes. The metal is post-annealed at 450°C for 20 minutes in a nitrogen environment to complete the MOS component. Its dielectric constant, equivalent oxide layer thickness, oxide layer defects, and leakage current mechanism are discussed. At PDA 750°C-5s, the maximum k value was found to be 21.2, and the EOT was 3.68nm.

Keywords: high-k gate dielectrics, HfO₂, post deposition annealing, RF magnetic

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253 Bimetallic Cu/Au Nanostructures and Bio-Application

Authors: Si Yin Tee

Abstract:

Bimetallic nanostructures have received tremendous interests as a new class of nanomaterials which may have better technological usefulness with distinct properties from those of individual atoms and molecules or bulk matter. They excelled over the monometallic counterparts because of their improved electronic, optical and catalytic performances. The properties and the applicability of these bimetallic nanostructures not only depend on their size and shape, but also on the composition and their fine structure. These bimetallic nanostructures are potential candidates for bio-applications such as biosensing, bioimaging, biodiagnostics, drug delivery, targeted therapeutics, and tissue engineering. Herein, gold-incorporated copper (Cu/Au) nanostructures were synthesized through the controlled disproportionation of Cu⁺-oleylamine complex at 220 ºC to form copper nanowires and the subsequent reaction with Au³⁺ at different temperatures of 140, 220 and 300 ºC. This is to achieve their synergistic effect through the combined use of the merits of low-cost transition and high-stability noble metals. Of these Cu/Au nanostructures, Cu/Au nanotubes display the best performance towards electrochemical non-enzymatic glucose sensing, originating from the high conductivity of gold and the high aspect ratio copper nanotubes with high surface area so as to optimise the electroactive sites and facilitate mass transport. In addition to high sensitivity and fast response, the Cu/Au nanotubes possess high selectivity against interferences from other potential interfering species and excellent reproducibility with long-term stability. By introducing gold into copper nanostructures at a low level of 3, 1 and 0.1 mol% relative to initial copper precursor, a significant electrocatalytic enhancement of the resulting bimetallic Cu/Au nanostructures starts to occur at 1 mol%. Overall, the present fabrication of stable Cu/Au nanostructures offers a promising low-cost platform for sensitive, selective, reproducible and reusable electrochemical sensing of glucose.

Keywords: bimetallic, electrochemical sensing, glucose oxidation, gold-incorporated copper nanostructures

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252 Characteristics of Different Solar PV Modules under Partial Shading

Authors: Hla Hla Khaing, Yit Jian Liang, Nant Nyein Moe Htay, Jiang Fan

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Partial shadowing is one of the problems that are always faced in terrestrial applications of solar photovoltaic (PV). The effects of partial shadow on the energy yield of conventional mono-crystalline and multi-crystalline PV modules have been researched for a long time. With deployment of new thin-film solar PV modules in the market, it is important to understand the performance of new PV modules operating under the partial shadow in the tropical zone. This paper addresses the impacts of different partial shadowing on the operating characteristics of four different types of solar PV modules that include multi-crystalline, amorphous thin-film, CdTe thin-film and CIGS thin-film PV modules.

Keywords: partial shade, CdTe, CIGS, multi-crystalline (mc-Si), amorphous silicon (a-Si), bypass diode

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251 First Principle Calculation of The Magnetic Properties of Mn-doped 6H-SiC

Authors: M. Al Azri, M. Elzain, K. Bouziane, S. M. Chérif

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The electronic and magnetic properties of 6H-SiC with Mn impurities have been calculated using ab-initio calculations. Various configurations of Mn sites and Si and C vacancies were considered. The magnetic coupling between the two Mn atoms at substitutional and interstitials sites with and without vacancies is studied as a function of Mn atoms interatomic distance. It was found that the magnetic interaction energy decreases with increasing distance between the magnetic atoms. The energy levels appearing in the band gap due to vacancies and due to Mn impurities are determined. The calculated DOS’s are used to analyze the nature of the exchange interaction between the impurities. The band coupling model based on the p-d and d-d level repulsions between Mn and SiC has been used to describe the magnetism observed in each configuration. Furthermore, the impacts of applying U to Mn-d orbital on the magnetic moment have also been investigated. The results are used to understand the experimental data obtained on Mn- 6H-SiC (as-implanted and as –annealed) for various Mn concentration (CMn = 0.7%, 1.6%, 7%).

Keywords: ab-initio calculations, diluted magnetic semiconductors, magnetic properties, silicon carbide

Procedia PDF Downloads 264
250 Development of High-Efficiency Down-Conversion Fluoride Phosphors to Increase the Efficiency of Solar Panels

Authors: S. V. Kuznetsov, M. N. Mayakova, V. Yu. Proydakova, V. V. Pavlov, A. S. Nizamutdinov, O. A. Morozov, V. V. Voronov, P. P. Fedorov

Abstract:

Increase in the share of electricity received by conversion of solar energy results in the reduction of the industrial impact on the environment from the use of the hydrocarbon energy sources. One way to increase said share is to improve the efficiency of solar energy conversion in silicon-based solar panels. Such efficiency increase can be achieved by transferring energy from sunlight-insensitive areas of work of silicon solar panels to the area of their photoresistivity. To achieve this goal, a transition to new luminescent materials with the high quantum yield of luminescence is necessary. Improvement in the quantum yield can be achieved by quantum cutting, which allows obtaining a quantum yield of down conversion of more than 150% due to the splitting of high-energy photons of the UV spectral range into lower-energy photons of the visible and near infrared spectral ranges. The goal of present work is to test approach of excitation through sensibilization of 4f-4f fluorescence of Yb3+ by various RE ions absorbing in UV and Vis spectral ranges. One of promising materials for quantum cutting luminophores are fluorides. In our investigation we have developed synthesis of nano- and submicron powders of calcium fluoride and strontium doped with rare-earth elements (Yb: Ce, Yb: Pr, Yb: Eu) of controlled dimensions and shape by co-precipitation from water solution technique. We have used Ca(NO3)2*4H2O, Sr(NO3)2, HF, NH4F as precursors. After initial solutions of nitrates were prepared they have been mixed with fluorine containing solution by dropwise manner. According to XRD data, the synthesis resulted in single phase samples with fluorite structure. By means of SEM measurements, we have confirmed spherical morphology and have determined sizes of particles (50-100 nm after synthesis and 150-300 nm after calcination). Temperature of calcination appeared to be 600°C. We have investigated the spectral-kinetic characteristics of above mentioned compounds. Here the diffuse reflection and laser induced fluorescence spectra of Yb3+ ions excited at around 4f-4f and 4f-5d transitions of Pr3+, Eu3+ and Ce3+ ions in the synthesized powders are reported. The investigation of down conversion luminescence capability of synthesized compounds included measurements of fluorescence decays and quantum yield of 2F5/2-2F7/2 fluorescence of Yb3+ ions as function of Yb3+ and sensitizer contents. An optimal chemical composition of CaF2-YbF3- LnF3 (Ln=Ce, Eu, Pr), SrF2-YbF3-LnF3 (Ln=Ce, Eu, Pr) micro- and nano- powders according to criteria of maximal IR fluorescence yield is proposed. We suppose that investigated materials are prospective in solar panels improvement applications. Work was supported by Russian Science Foundation grant #17-73- 20352.

Keywords: solar cell, fluorides, down-conversion luminescence, maximum quantum yield

Procedia PDF Downloads 246
249 Designing a Refractive Index Gas Biosensor Exploiting Defects in Photonic Crystal Core-Shell Rods

Authors: Bilal Tebboub, AmelLabbani

Abstract:

This article introduces a compact sensor based on high-transmission, high-sensitivity two-dimensional photonic crystals. The photonic crystal consists of a square network of silicon rods in the air. The sensor is composed of two waveguide couplers and a microcavity designed for monitoring the percentage of hydrogen in the air and identifying gas types. Through the Finite-Difference Time-Domain (FDTD) method, we demonstrate that the sensor's resonance wavelength is contingent upon changes in the gas refractive index. We analyze transmission spectra, quality factors, and sensor sensitivity. The sensor exhibits a notable quality factor and a sensitivity value of 1374 nm/RIU. Notably, the sensor's compact structure occupies an area of 74.5 μm2, rendering it suitable for integrated optical circuits.

Keywords: 2-D photonic crystal, sensitivity, F.D.T.D method, label-free biosensing

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248 Enhancement of Tribological Behavior for Diesel Engine Piston of Solid Skirt by an Optimal Choice of Interface Material

Authors: M. Amara, M. Tahar Abbes, A. Dokkiche, M. Benbrike

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Shear stresses generate frictional forces thus lead to the reduction of engine performance due to the power losses. This friction can also cause damage to the piston material. Thus, the choice of an optimal material for the piston is necessary to improve the elastohydrodynamical contacts of the piston. In this study, to achieve this objective, an elastohydrodynamical lubrication model that satisfies the best tribological behavior of the piston with the optimum choice of material is developed. Several aluminum alloys composed of different components are studied in this simulation. An application is made on the piston 60 x 120 mm Diesel engine type F8L413 currently mounted on Deutz trucks TB230 by using different aluminum alloys where alloys based on aluminum-silicon have better tribological performance.

Keywords: EHD lubricated contacts, friction, properties of materials, tribological performance

Procedia PDF Downloads 248
247 A Novel Model for Saturation Velocity Region of Graphene Nanoribbon Transistor

Authors: Mohsen Khaledian, Razali Ismail, Mehdi Saeidmanesh, Mahdiar Hosseinghadiry

Abstract:

A semi-analytical model for impact ionization coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating probability of electrons reaching ionization threshold energy Et and the distance traveled by electron gaining Et. In addition, ionization threshold energy is semi-analytically modeled for GNR. We justify our assumptions using analytic modeling and comparison with simulation results. Gaussian simulator together with analytical modeling is used in order to calculate ionization threshold energy and Kinetic Monte Carlo is employed to calculate ionization coefficient and verify the analytical results. Finally, the profile of ionization is presented using the proposed models and simulation and the results are compared with that of silicon.

Keywords: nanostructures, electronic transport, semiconductor modeling, systems engineering

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246 Bedouin of Silicon Wadi: A Case Study Analysis of the Multi-Level Perspectives and Factors Affecting Bedouin Entrepreneurialism as Obstacles to Entry into the Israeli High-Tech Industry

Authors: Frazer G. Thompson

Abstract:

Israel is a nation of cultural and historical diversity, yet the success factors for a modern Bedouin-Arab high-tech entrepreneur seem to be different from those of other Jewish-Israeli citizens. The purpose of this descriptive narrative case study is to explore how an Arab-Israeli all Negev-Bedouin technology company has succeeded in the Israeli high-tech industry by utilizing technology and engineering career opportunities available to Bedouin youth for ‘Sadel Tech,’ at Be’er-Sheva, the Negev, Israel. Methods: The strategy of inquiry seeks to explore real-life contextual understandings, multi-level perspectives, and the cultural influences of personal, community, educational, and entrepreneurial factors. The research methodology includes in-depth one-on-one interviews, focus group sessions, and overt observation to explore the meaning and understanding of the constructs toward determining the effect all or a few of the elements may have on the overall success factors of the company. Results: Study results indicate that the state-run educational system in Israel fails to adequately integrate important aspects of Bedouin culture into the learning environment. However, Bedouin entrepreneurs are finding ways to compensate for these inadequacies by utilizing non-traditional methods of teaching, learning, and doing business. Government incentives for Bedouin start-ups are also recognized as contributors. Employees of Sadel live and work in the Negev, the Gaza Strip, and the West Bank, further informing the study that the traditions of tribal etiquette continue to contribute to modern Bedouin-Arab business culture. Conclusion: Bedouin's business success in Israel is a multi-dimensional concept. While cultural acumen plays a prominent and unique role for both Arab-Israelis and Jewish-Israelis in economic and entrepreneurial pursuits, the marginalization of the Bedouin continues to contribute to the lack of educational and professional opportunities for Bedouin in Israel. Although recognized as important at the government level, programs necessary to implement the infrastructure required to support Bedouin entrepreneurship in Israel remain infantile. The Israeli Government is providing opportunities through grants and other incentives for Bedouin entrepreneurial start-ups, indicating that Israel has recognized the impact of this growing demographic. However, although many Bedouin graduates from University each year with advanced degrees, opportunities for Bedouin within the Israeli high-tech sector remain scarce.

Keywords: Bedouin education, Bedouin entrepreneur, economic anthropology, ethnic business opportunities, Israeli tech, Silicon Wadi

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245 Synthesis and Characterization of Amino-Functionalized Polystyrene Nanoparticles as Reactive Filler

Authors: Yaseen Elhebshi, Abdulkareem Hamid, Nureddin Bin Issa, Xiaonong Chen

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A convenient method of preparing ultrafine polystyrene latex nano-particles with amino groups on the surface is developed. Polystyrene latexes in the size range 50–400 nm were prepared via emulsion polymerization, using sodium dodecyl sulfate (SDS) as surfactant. Polystyrene with amino groups on the surface will be fine to use as organic filler to modify rubber. Transmission electron microscopy (TEM) was used to observe the morphology of silicon dioxide and functionalized polystyrene nano-particles. The nature of bonding between the polymer and the reactive groups on the filler surfaces was analyzed using Fourier transform infrared spectroscopy (FTIR). Scanning electron microscopy (SEM) was employed to examine the filler surface.

Keywords: reactive filler, emulsion polymerization, particle size, polystyrene nanoparticles

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244 Decoration of Multi-Walled Carbon Nanotubes by CdS Nanoparticles Using Magnetron Sputtering Method

Authors: Z. Ghorannevis, E. Akbarnejad, B. Aghazadeh, M. Ghoranneviss

Abstract:

Carbon nanotubes (CNTs) modified with semiconductor nanocrystalline particles may find wide applications due to their unique properties. Here Cadmium Sulfide (CdS) nanoparticles were successfully grown on Multi-Walled Carbon Nanotubes (MWNTs) via a magnetron sputtering method for the first time. The CdS/MWNTs sample was characterized with X-ray diffraction (XRD), Field Emission Scanning and High Resolution Transmission Electron Microscopies (SEM/TEM) and four point probe. The obtained images show clearly the decoration of the MWNTs by the CdS nanoparticles, and the XRD measurements indicate the CdS structure as hexagonal type. Moreover, the physical properties of the CdS/MWNTs were compared with the physical properties of the CdS nanoparticles grown on the silicon. Electrical measurements of CdS and CdS/MWNTs reveal that CdS/MWNTs has lower resistivity than the CdS sample which may be due to the higher carrier concentrations.

Keywords: CdS, MWNTs, HRTEM, magnetron sputtering

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243 Low Power CNFET SRAM Design

Authors: Pejman Hosseiniun, Rose Shayeghi, Iman Rahbari, Mohamad Reza Kalhor

Abstract:

CNFET has emerged as an alternative material to silicon for high performance, high stability and low power SRAM design in recent years. SRAM functions as cache memory in computers and many portable devices. In this paper, a new SRAM cell design based on CNFET technology is proposed. The proposed SRAM cell design for CNFET is compared with SRAM cell designs implemented with the conventional CMOS and FinFET in terms of speed, power consumption, stability, and leakage current. The HSPICE simulation and analysis show that the dynamic power consumption of the proposed 8T CNFET SRAM cell’s is reduced about 48% and the SNM is widened up to 56% compared to the conventional CMOS SRAM structure at the expense of 2% leakage power and 3% write delay increase.

Keywords: SRAM cell, CNFET, low power, HSPICE

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242 Effect of Hot Rolling Conditions on Magnetic Properties of Fe-3%Si Non-Grain Oriented Electrical Steels

Authors: Emre Alan, Yusuf Yamanturk, Gokay Bas

Abstract:

Non-grain oriented electrical steels are high silicon containing steels in which the direction of magnetism is intended the same in any direction of the material. Major applications of non-grain-oriented electrical steels are electrical motors, generators, etc. where low magnetic losses are required. Selection of proper hot rolling process parameters is an important factor in order to produce a material that has desired magnetic properties. In this study, the effect of finishing and coiling temperatures on magnetic properties of Fe-3%Si non-grain oriented electrical steels will be investigated. Additionally, the effect of slab reheating temperature at same entry finishing temperature will be investigated by means of reduction in roughing mill pass number from 1-5 to 1-3.

Keywords: electrical steels, hot rolling, magnetic properties, roughing mill

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241 Design and Characterization of a CMOS Process Sensor Utilizing Vth Extractor Circuit

Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

Abstract:

This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS process sensor, PVT sensor, threshold extractor circuit, Vth extractor circuit

Procedia PDF Downloads 154
240 An Investigation of Foam Glass Production from Sheet Glass Waste and SiC Foaming Agent

Authors: Aylin Sahin, Recep Artir, Mustafa Kara

Abstract:

Foam glass is a remarkable material with having incomparable properties like low weight, rigidity, high thermal insulation capacity and porous structure. In this study, foam glass production was investigated with using glass powder from sheet glass waste and SiC powder as foaming agent. Effects of SiC powders and sintering temperatures on foaming process were examined. It was seen that volume expansions (%), cellular structures and pore diameters of obtained foam glass samples were highly depending on composition ratios and sintering temperature. The study showed that various foam glass samples having with homogenous closed porosity, low weight and low thermal conductivity were achieved by optimizing composition ratios and sintering temperatures.

Keywords: foam glass, foaming, waste glass, silicon carbide

Procedia PDF Downloads 347