Search results for: Power Amplifier

Authors: Karandeep Kaur

Abstract:

This paper presents the design of power amplifier (PA) for mmWave communication systems. The designed amplifier uses GlobalFoundries 22 FDX technology and works at an operational frequency of 140 GHz in the D-Band. With a supply voltage of 0.8V for the super low threshold voltage transistors, the amplifier is biased in class AB and has a total current consumption of 50 mA. The measured saturated output power from the power amplifier is 5.6 dBm with an output-referred 1dB-compression point of 1.6dBm. The measured gain of PA is 19 dB with 3 dB-bandwidth ranging from 120 GHz to 140 GHz. The chip occupies an area of 795µm × 410µm.

Keywords: mmWave communication system, power amplifiers, 22FDX, D-Band, cross-coupled capacitive neutralization

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Authors: Sina Mahdavi, Faeze Noruzpur, Aysuda Noruzpur

Abstract:

This paper proposes a high linear, low power and wideband Variable Gain Amplifier (VGA) with a direct current (DC) gain range of -10.2dB to 60.7dB. By applying the proposed idea to the folded cascade amplifier, it is possible to achieve a 71dB DC gain, 35MHz (-3dB) bandwidth, accompanied by high linearity and low sensitivity as well. It is noteworthy that the proposed idea can be able to apply on every differential amplifier, too. Moreover, the total power consumption and unity gain bandwidth of the proposed VGA is 1.41mW with a power supply of 1.8 volts and 4.37GHz, respectively, and 0.8pF capacitor load is applied at the output nodes of the amplifier. Furthermore, the proposed structure is simulated in whole process corners and different temperatures in the region of -60 to +90 ºC. Simulations are performed for all corner conditions by HSPICE using the BSIM3 model of the 180nm CMOS technology and MATLAB software.

Keywords: variable gain amplifier, low power, low voltage, folded cascade, amplifier, DC gain

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Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier

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Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

Abstract:

In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: optical amplifiers, EDFA, L-band, optical networks

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Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E, and F are the main techniques for realizing power amplifiers. An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), gallium nitride (GaN), Agilent’s Advanced Design System (ADS), lumped elements

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Authors: F. Rahmani, F. Razaghian, A. R. Kashaninia

Abstract:

This article proposes a new method for application in communication circuit systems that increase efficiency, PAE, output power and gain in the circuit. The proposed method is based on a combination of switching class-E and class-J and has been termed class-EJ. This method was investigated using both theory and simulation to confirm ~72% PAE and output power of > 39 dBm. The combination and design of the proposed power amplifier accrues gain of over 15dB in the 2.9 to 3.5 GHz frequency bandwidth. This circuit was designed using MOSFET and high power transistors. The load- and source-pull method achieved the best input and output networks using lumped elements. The proposed technique was investigated for fundamental and second harmonics having desirable amplitudes for the output signal.

Keywords: power amplifier (PA), high power, class-J and class-E, high efficiency

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Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7^o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter

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Authors: Udayan Patankar, Shashwati Bhagat, Vilas Nitneware, Ants Koel

Abstract:

An ISM band power amplifier is a type of electronic amplifier used to convert a low-power radio-frequency signal into a larger signal of significant power, typically used for driving the antenna of a transmitter. Due to drastic changes in telecommunication generations may lead to the requirements of improvements. Rapid changes in communication lead to the wide implementation of WLAN technology for its excellent characteristics, such as high transmission speed, long communication distance, and high reliability. Many applications such as WLAN, Bluetooth, and ZigBee, etc. were evolved with 2.4GHz to 5 GHz ISM Band, in which the power amplifier (PA) is a key building block of RF transmitters. There are many manufacturing processes available to manufacture a power amplifier for desired power output, but the major problem they have faced is about the power it consumed for its proper working, as many of them are fabricated on the GaN HEMT, Bi COMS process. In this paper we present a CMOS Base two stage cascode design of power amplifier working on 2.4GHz ISM frequency band. To lower the costs and allow full integration of a complete System-on-Chip (SoC) we have chosen 0.13µm low power CMOS technology for design. While designing a power amplifier, it is a real task to achieve higher power efficiency with minimum resources. This design showcase the Multi biased Cascode methodology to implement a two-stage CMOS power amplifier using ADS and LTSpice simulating tool. Main source is maximum of 2.4V which is internally distributed into different biasing point VB driving and VB driven as required for distinct stages of two stage RF power amplifier. It shows maximum power added efficiency near about 70.195% whereas its Power added efficiency calculated at 1 dB compression point is 44.669 %. Biased MOSFET is used to reduce total dc current as this circuit is designed for different wireless applications comes under 2.4GHz ISM Band.

Keywords: RFIC, PAE, RF CMOS, impedance matching

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Authors: Tian-Wei Huang, Wei-Ting Bai, Yu-Tung Cheng, Jeng-Han Tsai

Abstract:

In this paper, a 1-stage 6-section conventional distributed amplifier (CDA) structure distributed power amplifier (DPA) fabricated in a 28-nm HPC+ 1P9M CMOS process is proposed. The transistor size selection is introduced to achieve broadband power matching and thus remains a high flatness output power and power added efficiency (PAE) within the bandwidth. With the inductive peaking technique, the high-frequency pole appears and the high-frequency gain is increased; the gain flatness becomes better as well. The inductive elements used to form an artificial transmission line are built up with a floating ground coplanar waveguide plane (CPWFG) rather than a microstrip line, coplanar waveguide (CPW), or spiral inductor to get better performance. The DPA achieves 12.6 dB peak gain at 52.5 GHz with 2.9 to 64.9 GHz 3-dB bandwidth. The Psat is 11.4 dBm with PAEMAX of 10.6 % at 25 GHz. The output 1-dB compression point power is 9.8 dBm.

Keywords: distributed power amplifier (DPA), gain bandwidth (GBW), floating ground CPW, inductive peaking, 28-nm, CMOS, 5G.

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Authors: Guo-Ming Sung, Ramavath Naga Raju Naik

Abstract:

This paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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Authors: A. Anitha, M. Aishwariya

Abstract:

The realization of truly ubiquitous wireless sensor networks (WSN) demands Ultra-low power wireless communication capability. Because the radio transceiver in a wireless sensor node consumes more power when compared to the computation part it is necessary to reduce the power consumption. Hence, a low power transceiver is designed and implemented in a 120 nm CMOS technology for wireless sensor nodes. The power consumption of the transceiver is reduced still by maintaining the sensitivity. The transceiver designed combines the blocks including differential oscillator, mixer, envelope detector, power amplifiers, and LNA. RF signal modulation and demodulation is carried by On-Off keying method at 2.4 GHz which is said as ISM band. The transmitter demonstrates an output power of 2.075 mW while consuming a supply voltage of range 1.2 V-5.0 V. Here the comparison of LNA and power amplifier is done to obtain an amplifier which produces a high gain of 1.608 dB at receiver which is suitable to produce a desired sensitivity. The multistage RF amplifier is used to improve the gain at the receiver side. The power dissipation of the circuit is in the range of 0.183-0.323 mW. The receiver achieves a sensitivity of about -95 dBm with data rate of 1 Mbps.

Keywords: CMOS, envelope detector, ISM band, LNA, low power electronics, PA, wireless transceiver

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Authors: Ow Tze Weng, Suhaila Isaak, Yusmeeraz Yusof

Abstract:

The trend of health care screening devices in the world is increasingly towards the favor of portability and wearability, especially in the most common electrocardiogram (ECG) monitoring system. This is because these wearable screening devices are not restricting the patient’s freedom and daily activities. While the demand of low power and low cost biomedical system on chip (SoC) is increasing in exponential way, the front end ECG sensors are still suffering from flicker noise for low frequency cardiac signal acquisition, 50 Hz power line electromagnetic interference, and the large unstable input offsets due to the electrode-skin interface is not attached properly. In this paper, a high performance CMOS amplifier for ECG sensors that suitable for low power wearable cardiac screening is proposed. The amplifier adopts the highly stable folded cascode topology and later being implemented into RC feedback circuit for low frequency DC offset cancellation. By using 0.13 µm CMOS technology from Silterra, the simulation results show that this front end circuit can achieve a very low input referred noise of 1 pV/√Hz and high common mode rejection ratio (CMRR) of 174.05 dB. It also gives voltage gain of 75.45 dB with good power supply rejection ratio (PSSR) of 92.12 dB. The total power consumption is only 3 µW and thus suitable to be implemented with further signal processing and classification back end for low power biomedical SoC.

Keywords: CMOS, ECG, amplifier, low power

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: high gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra series

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Authors: Ata Khorami, Mohammad Sharifkhani

Abstract:

In the dynamic comparators, the pre-amplifier amplifies the input differential voltage and when the output Vcm of the pre-amplifier becomes larger than Vth of the latch input transistors, the latch is activated and finalizes the comparison. As a result, the pre-amplification delay is fixed to a value and cannot be set at the minimum required delay, thus, significant power and delay are imposed. In this paper, a novel structure is proposed through which the pre-amplification delay can be set at any low value saving power and time. Simulations show that using the proposed structure, by setting the pre-amplification delay at the minimum required value the power and comparison delay can be reduced by 55% and 100ps respectively.

Keywords: dynamic comparator, low power comparator, analog to digital converter, pre-amplification delay

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Authors: Abdelhamid Louliej, Younes Jabrane

Abstract:

Satellites are becoming indispensable assets to fifth-generation (5G) new radio architecture, complementing wireless and terrestrial communication links. The combination of satellites and 5G architecture allows consumers to access all next-generation services anytime, anywhere, including scenarios, like traveling to remote areas (without coverage). Nevertheless, this solution faces several challenges, such as a significant propagation delay, Doppler frequency shift, and high Peak-to-Average Power Ratio (PAPR), causing signal distortion due to the non-linear saturation of the High-Power Amplifier (HPA). To compensate for HPA non-linearity in 5G satellite transmission, an efficient pre-distorter scheme using Neural Networks (NN) is proposed. To assess the proposed NN pre-distorter, two types of HPA were investigated: Travelling Wave Tube Amplifier (TWTA) and Solid-State Power Amplifier (SSPA). The results show that the NN pre-distorter design presents EVM improvement by 95.26%. NMSE and ACPR were reduced by -43,66 dB and 24.56 dBm, respectively. Moreover, the system suffers no degradation of the Bit Error Rate (BER) for TWTA and SSPA amplifiers.

Keywords: satellites, 5G, neural networks, HPA, TWTA, SSPA, EVM, NMSE, ACPR

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Authors: Belloui Bouzid

Abstract:

In this paper, broadband design of erbium doped fiber amplifier (EDFA) is demonstrated and proved experimentally. High and broad gain is covered in C and L bands. The used technique combines, in one configuration, two double passes with split band structure for the amplification of two traveled signals one for the C band and the other for L band. This new topology is to investigate the trends of high gain and wide amplification at different status of pumping power, input wavelength, and input signal power. The presented paper is to explore the performance of EDFA gain using what it can be called double pass double branch wide band amplification configuration. The obtained results show high gain and wide broadening range of 44.24 dB and 80 nm amplification respectively.

Keywords: erbium doped fiber amplifier, erbium doped fiber laser, optical amplification, fiber laser

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Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

This paper proposes one stage and two stage CMOS Complementary Regulated Cascode Distributed Amplifier (CRCDA) design based on Inductive and Transformer coupling techniques. Usually, Distributed amplifier is based on inductor coupling between gate and gate of MOSFET and between drain and drain of MOSFET. But this paper propose some new idea, by coupling with differential primary windings of transformer between gate and gate of MOSFET first stage and second stage of regulated cascade amplifier and by coupling with differential secondary windings transformer of MOSFET between drain and drain of MOSFET first stage and second stage of regulated cascade amplifier. This paper also proposes polynomial modeling of Silicon Transformer passive equivalent circuit from Nanyang Technological University which is used to extract frequency response of transformer. Cadence simulation results are used to verify validity of transformer polynomial modeling which can be used to design distributed amplifier without Cadence. 4 parameters of scattering matrix of 2 port of the propose circuit is derived as a function of 4 parameters of impedance matrix.

Keywords: CMOS regulated cascode distributed amplifier, silicon transformer modeling with polynomial, low power consumption, distribute amplification technique

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Authors: Meng-Jie Hsiao, Cam Nguyen

Abstract:

Wide-band devices in Ku band (12-18 GHz) and K band (18-27 GHz) have received significant attention for high-data-rate communications and high-resolution sensing. Especially, devices operating around 24 GHz is attractive due to the 24-GHz unlicensed applications. One of the most important components in RF systems is power amplifier (PA). Various PAs have been developed in the Ku and K bands on GaAs, InP, and silicon (Si) processes. Although the PAs using GaAs or InP process could have better power handling and efficiency than those realized on Si, it is very hard to integrate the entire system on the same substrate for GaAs or InP. Si, on the other hand, facilitates single-chip systems. Hence, good PAs on Si substrate are desirable. Especially, Si-based PA having good linearity is necessary for next generation communication protocols implemented on Si. We report a 16.5 to 25.5 GHz Si-based PA having flat saturated power of 19.5 ± 1.5 dBm, output 1-dB power compression (OP1dB) of 16.5 ± 1.5 dBm, and 15-23 % power added efficiency (PAE). The PA consists of a drive amplifier, two main amplifiers, and lump-element Wilkinson power divider and combiner designed and fabricated in TowerJazz 0.18µm SiGe BiCMOS process having unity power gain frequency (fMAX) of more than 250 GHz. The PA is realized as a cascode amplifier implementing both heterojunction bipolar transistor (HBT) and n-channel metal–oxide–semiconductor field-effect transistor (NMOS) devices for gain, frequency response, and linearity consideration. Particularly, a body-floating technique is utilized for the NMOS devices to improve the voltage swing and eliminate parasitic capacitances. The developed PA has measured flat gain of 20 ± 1.5 dB across 16.5-25.5 GHz. At 24 GHz, the saturated power, OP1dB, and maximum PAE are 20.8 dBm, 18.1 dBm, and 23%, respectively. Its high performance makes it attractive for use in Ku/K-band, especially 24 GHz, communication and radar systems. This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors.

Keywords: power amplifiers, amplifiers, communication systems, radar systems

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Authors: A. Suresh, Sreehari Rao Patri, K. S. R. Krishnaprasad

Abstract:

An ultra low power capacitor less low-dropout voltage regulator with improved transient response using gain enhanced feed forward path compensation is presented in this paper. It is based on a cascade of a voltage amplifier and a transconductor stage in the feed forward path with regular error amplifier to form a composite gain-enhanced feed forward stage. It broadens the gain bandwidth and thus improves the transient response without substantial increase in power consumption. The proposed LDO, designed for a maximum output current of 100 mA in UMC 180 nm, requires a quiescent current of 69 µA. An undershoot of 153.79mV for a load current changes from 0mA to 100mA and an overshoot of 196.24mV for current change of 100mA to 0mA. The settling time is approximately 1.1 µs for the output voltage undershoot case. The load regulation is of 2.77 µV/mA at load current of 100mA. Reference voltage is generated by using an accurate band gap reference circuit of 0.8V.The costly features of SOC such as total chip area and power consumption is drastically reduced by the use of only a total compensation capacitance of 6pF while consuming power consumption of 0.096 mW.

Keywords: capacitor-less LDO, frequency compensation, transient response, latch, self-biased differential amplifier

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity, and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: LDMOS, amplifier, back-off, bias circuit

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Authors: Yo-Sheng Lin, Chien-Chin Wang, Yun-Wen Lin, Chien-Yo Lee

Abstract:

A wide band power amplifier (PA) for 60 GHz and 77 GHz direct-conversion transceiver using standard 90 nm CMOS technology is reported. The PA comprises a cascode input stage with a wide band T-type input-matching network and inductive interconnection and load, followed by a common-source (CS) gain stage and a CS output stage. To increase the saturated output power (PSAT) and power-added efficiency (PAE), the output stage adopts a two-way power dividing and combining architecture. Instead of the area-consumed Wilkinson power divider and combiner, miniature low-loss transmission-line inductors are used at the input and output terminals of each of the output stages for wide band input and output impedance matching to 100 ohm. This in turn results in further PSAT and PAE enhancement. The PA consumes 92.2 mW and achieves maximum power gain (S21) of 23.3 dB at 56 GHz, and S21 of 21.7 dB and 14 dB, respectively, at 60 GHz and 77 GHz. In addition, the PA achieves excellent saturated output power (PSAT) of 10.6 dB and maximum power added efficiency (PAE) of 12.3% at 60 GHz. At 77 GHz, the PA achieves excellent PSAT of 10.4 dB and maximum PAE of 6%. These results demonstrate the proposed wide band PA architecture is very promising for 60 GHz wireless personal local network (WPAN) and 77 GHz automobile radar systems.

Keywords: 60 GHz, 77 GHz, PA, WPAN, automotive radar

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Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multi-casting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multi-casting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multi-casting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier

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Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption whivh has a very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to symmetrical input stage. P-Spice simulation results using 0.18µm MIETEC CMOS process parameters using supply voltage of ±1.2V and 50μA biasing current. The P-Spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, open-loop gain-bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/µS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA

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Authors: Ashraf Abuelhaija, Klaus Solbach

Abstract:

In Ultra high-field MRI scanners (3T and higher), parallel RF transmission techniques using multiple RF chains with multiple transmit elements are a promising approach to overcome the high-field MRI challenges in terms of inhomogeneity in the RF magnetic field and SAR. However, mutual coupling between the transmit array elements disturbs the desirable independent control of the RF waveforms for each element. This contribution demonstrates a 18 dB improvement of decoupling (isolation) performance due to the very low output impedance of our 1 kW power amplifier.

Keywords: EM coupling, inter-element isolation, magnetic resonance imaging (mri), parallel transmit

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Authors: Maryam Abata, Moulhime El Bekkali, Said Mazer, Catherine Algani, Mahmoud Mehdi

Abstract:

One major problem of most electronic systems operating in the millimeter wave band is the signal generation with a high purity and a stable carrier frequency. This problem is overcome by using the combination of a signal with a low frequency local oscillator (LO) and several stages of frequency multipliers. The use of these frequency multipliers to create millimeter-wave signals is an attractive alternative to direct generation signal. Therefore, the isolation problem of the local oscillator from the other stages is always present, which leads to have various mechanisms that can disturb the oscillator performance, thus a buffer amplifier is often included in oscillator outputs. In this paper, we present the study and design of a buffer amplifier in the mm-wave band using a 0.15μm pHEMT from UMS foundry. This amplifier will be used as a part of a frequency quadrupler at 60 GHz.

Keywords: Mm-wave band, local oscillator, frequency quadrupler, buffer amplifier

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Authors: Divya Pradip Roy, Md. Zahirul Alam Chowdhury

Abstract:

Electromyography (EMG) sensors are generally used to record the electrical activity produced by skeletal muscles. The conventional EMG sensors available in the market are expensive. This research suggests a low cost EMG sensor design which can be built with simple devices within our reach. In this research, one instrumentation amplifier, two high pass filters, two low pass filters and an inverting amplifier is connected sequentially. The output from the circuit exhibits electrical potential generated by the muscle cells when they are neurologically activated. This electromyography signal is used to control prosthetic devices, identifying neuromuscular diseases and for various other purposes.

Keywords: EMG, high pass filter, instrumentation amplifier, inverting amplifier, low pass filter, neuromuscular

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Authors: Noha Al Majid, Said Mazer, Moulhime El Bekkali, Catherine Algani, Mahmoud Mehdi

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A low noise figure (NF) and high linearity V-band Low Noise Amplifier (LNA) is reported in this article. The LNA compromises a three-stage cascode configuration. This LNA will be used as a part of a WPAN (Wireless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. It is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH 15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1 dB and its high linearity (IIP3 is about 22 dB). The LNA consumes 0.24 Watts, achieving a high gain which is about 23 dB, an input return loss better than -10 dB and an output return loss better than -8 dB.

Keywords: low noise amplifier, V-band, MMIC technology, LNA, amplifier, cascode, pseudomorphic high electron mobility transistor (PHEMT), high linearity

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Authors: Mehmet Nefes, Selman Demirel, Hasan H. Ertok, Cenk Sen

Abstract:

A typical reliability engineering problem regarding communication satellites has been considered to determine redundancy allocation scheme of power amplifiers within payload transponder module, whose dominant function is to amplify power levels of the received signals from the Earth, through maximizing reliability against mass, power, and other technical limitations. Adding each redundant power amplifier component increases not only reliability but also hardware, testing, and launch cost of a satellite. This study investigates a multi-objective approach used in order to solve Redundancy Allocation Problem (RAP) for a communication satellite payload transponder, focusing on design cost due to redundancy and reliability factors. The main purpose is to find the optimum power amplifier redundancy configuration satisfying reliability and capacity thresholds simultaneously instead of analyzing respectively or independently. A mathematical model and calculation approach are instituted including objective function definitions, and then, the problem is solved analytically with different input parameters in MATLAB environment. Example results showed that payload capacity and failure rate of power amplifiers have remarkable effects on the solution and also processing time.

Keywords: communication satellite payload, multi-objective optimization, redundancy allocation problem, reliability, transponder

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Authors: Moez ul Hassan, Bushra Noman, Sarmad Hameed, Shahab Mehmood, Asma Bashir

Abstract:

The importance of Noble prize winning “Patch Clamp Technique” is well documented. However, Patch Clamp Technique is very expensive and hence hinders research in developing countries. In this paper, detection, processing and recording of ultra low current from induced cells by using transimpedence amplifier is described. The sensitivity of the proposed amplifier is in the range of femto amperes (fA). Capacitive-feedback is used with active load to obtain a 20MΩ transimpedance gain. The challenging task in designing includes achieving adequate performance in gain, noise immunity and stability. The circuit designed by the authors was able to measure current in the rangeof 300fA to 100pA. Adequate performance shown by the amplifier with different input current and outcome result was found to be within the acceptable error range. Results were recorded using LabVIEW 8.5®for further research.

Keywords: drug discovery, ionic current, operational amplifier, patch clamp

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Authors: Shiang-Hwua Yu, Po-Hsun Wu

Abstract:

This study introduces two types of self-oscillating circuits that are frequently found in power electronics applications. Special effort is made to relate the circuits to the analogous mechanical systems of some important scientific inventions: Galileo’s pendulum clock and Coulomb’s friction model. A little touch of related history and philosophy of science will hopefully encourage curiosity, advance the understanding of self-oscillating systems and satisfy the aspiration of some students for scientific literacy. Finally, the two self-oscillating circuits are applied to design a simple class-D audio amplifier.

Keywords: self-oscillation, sigma-delta modulator, pendulum clock, Coulomb friction, class-D amplifier

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