Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 44

Search results for: amplifiers

44 Graphene Transistors Based Microwave Amplifiers

Authors: Pejman Hosseinioun, Ali Safari, Hamed Sarbazi

Abstract:

Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising material for future high-speed nanoelectronics due to its intrinsic superior carrier mobility and very high saturation velocity. These exceptional carrier transport properties suggest that graphene field effect transistors (G-FETs) can potentially outperform other FET technologies. In this paper, detailed discussions are introduced for Graphene Transistors Based Microwave Amplifiers.

Keywords: graphene, microwave FETs, microwave amplifiers, transistors

Procedia PDF Downloads 385
43 High Efficiency Class-F Power Amplifier Design

Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E, and F are the main techniques for realizing power amplifiers. An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), gallium nitride (GaN), Agilent’s Advanced Design System (ADS), lumped elements

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42 Improving the LDMOS Temperature Compensation Bias Circuit to Optimize Back-Off

Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity, and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: LDMOS, amplifier, back-off, bias circuit

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41 A Novel Design in the Use of Planar Transformers for LDMOS Based Amplifiers in Bands II, III, DRM+, DVB-T and DAB+

Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The coaxial transformer-coupled push-pull circuitry has been used widely in HF and VHF amplifiers for many decades without significant changes in the topology of the transformers. Basic changes over the years concerned the construction and turns ratio of the transformers as has been imposed upon the newer technologies active devices demands. The balun transmission line transformers applied in push-pull amplifiers enable input/output impedance transformation, but are mainly used to convert the balanced output into unbalanced and the input unbalanced into balanced. A simple and affordable alternative solution over the traditional coaxial transformer is the coreless planar balun. A key advantage over the traditional approach lies in the high specifications repeatability; simplifying the amplifier construction requirements as the planar balun constitutes an integrated part of the PCB copper layout. This paper presents the performance analysis of a planar LDMOS MRFE6VP5600 Push-Pull amplifier that enables robust operation in Band III, DVB-T, DVB-T2 standards but functions equally well in Band II, for DRM+ new generation transmitters.

Keywords: amplifier, balun, complex impedance, LDMOS, planar-transformers

Procedia PDF Downloads 325
40 Impact of Hybrid Optical Amplifiers on 16 Channel Wavelength Division Multiplexed System

Authors: Inderpreet Kaur, Ravinder Pal Singh, Kamal Kant Sharma

Abstract:

This paper addresses the different configurations used of optical amplifiers with 16 channels in Wavelength Division Multiplexed system. The systems with 16 channels have been simulated for evaluation of various parameters; Bit Error Rate, Quality Factor, for threshold values for a range of wavelength from 1471 nm to 1611 nm. Comparison of various combination of configurations have been analyzed with EDFA and FRA but EDFA-FRA configuration performance has been found satisfactory in terms of performance indices and stable region. The paper also compared various parameters quantized with different configurations individually. It has been found that Q factor has high value with less value of BER and high resolution for EDFA-FRA configuration.

Keywords: EDFA, FRA, WDM, Q factor, BER

Procedia PDF Downloads 234
39 Compact Low-Voltage Biomedical Instrumentation Amplifiers

Authors: Phanumas Khumsat, Chalermchai Janmane

Abstract:

Low-voltage instrumentation amplifier has been proposed for 3-lead electrocardiogram measurement system. The circuit’s interference rejection technique is based upon common-mode feed-forwarding where common-mode currents have cancelled each other at the output nodes. The common-mode current for cancellation is generated by means of common-mode sensing and emitter or source followers with resistors employing only one transistor. Simultaneously this particular transistor also provides common-mode feedback to the patient’s right/left leg to further reduce interference entering the amplifier. The proposed designs have been verified with simulations in 0.18-µm CMOS process operating under 1.0-V supply with CMRR greater than 80dB. Moreover ECG signals have experimentally recorded with the proposed instrumentation amplifiers implemented from discrete BJT (BC547, BC558) and MOSFET (ALD1106, ALD1107) transistors working with 1.5-V supply.

Keywords: electrocardiogram, common-mode feedback, common-mode feedforward, communication engineering

Procedia PDF Downloads 261
38 Multi-Level Pulse Width Modulation to Boost the Power Efficiency of Switching Amplifiers for Analog Signals with Very High Crest Factor

Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier

Procedia PDF Downloads 221
37 A Ku/K Band Power Amplifier for Wireless Communication and Radar Systems

Authors: Meng-Jie Hsiao, Cam Nguyen

Abstract:

Wide-band devices in Ku band (12-18 GHz) and K band (18-27 GHz) have received significant attention for high-data-rate communications and high-resolution sensing. Especially, devices operating around 24 GHz is attractive due to the 24-GHz unlicensed applications. One of the most important components in RF systems is power amplifier (PA). Various PAs have been developed in the Ku and K bands on GaAs, InP, and silicon (Si) processes. Although the PAs using GaAs or InP process could have better power handling and efficiency than those realized on Si, it is very hard to integrate the entire system on the same substrate for GaAs or InP. Si, on the other hand, facilitates single-chip systems. Hence, good PAs on Si substrate are desirable. Especially, Si-based PA having good linearity is necessary for next generation communication protocols implemented on Si. We report a 16.5 to 25.5 GHz Si-based PA having flat saturated power of 19.5 ± 1.5 dBm, output 1-dB power compression (OP1dB) of 16.5 ± 1.5 dBm, and 15-23 % power added efficiency (PAE). The PA consists of a drive amplifier, two main amplifiers, and lump-element Wilkinson power divider and combiner designed and fabricated in TowerJazz 0.18µm SiGe BiCMOS process having unity power gain frequency (fMAX) of more than 250 GHz. The PA is realized as a cascode amplifier implementing both heterojunction bipolar transistor (HBT) and n-channel metal–oxide–semiconductor field-effect transistor (NMOS) devices for gain, frequency response, and linearity consideration. Particularly, a body-floating technique is utilized for the NMOS devices to improve the voltage swing and eliminate parasitic capacitances. The developed PA has measured flat gain of 20 ± 1.5 dB across 16.5-25.5 GHz. At 24 GHz, the saturated power, OP1dB, and maximum PAE are 20.8 dBm, 18.1 dBm, and 23%, respectively. Its high performance makes it attractive for use in Ku/K-band, especially 24 GHz, communication and radar systems. This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors.

Keywords: power amplifiers, amplifiers, communication systems, radar systems

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36 Reliability and Cost Focused Optimization Approach for a Communication Satellite Payload Redundancy Allocation Problem

Authors: Mehmet Nefes, Selman Demirel, Hasan H. Ertok, Cenk Sen

Abstract:

A typical reliability engineering problem regarding communication satellites has been considered to determine redundancy allocation scheme of power amplifiers within payload transponder module, whose dominant function is to amplify power levels of the received signals from the Earth, through maximizing reliability against mass, power, and other technical limitations. Adding each redundant power amplifier component increases not only reliability but also hardware, testing, and launch cost of a satellite. This study investigates a multi-objective approach used in order to solve Redundancy Allocation Problem (RAP) for a communication satellite payload transponder, focusing on design cost due to redundancy and reliability factors. The main purpose is to find the optimum power amplifier redundancy configuration satisfying reliability and capacity thresholds simultaneously instead of analyzing respectively or independently. A mathematical model and calculation approach are instituted including objective function definitions, and then, the problem is solved analytically with different input parameters in MATLAB environment. Example results showed that payload capacity and failure rate of power amplifiers have remarkable effects on the solution and also processing time.

Keywords: communication satellite payload, multi-objective optimization, redundancy allocation problem, reliability, transponder

Procedia PDF Downloads 166
35 Millimeter-Wave Silicon Power Amplifiers for 5G Wireless Communications

Authors: Kyoungwoon Kim, Cuong Huynh, Cam Nguyen

Abstract:

Exploding demands for more data, faster data transmission speed, less interference, more users, more wireless devices, and better reliable service-far exceeding those provided in the current mobile communications networks in the RF spectrum below 6 GHz-has led the wireless communication industry to focus on higher, previously unallocated spectrums. High frequencies in RF spectrum near (around 28 GHz) or within the millimeter-wave regime is the logical solution to meet these demands. This high-frequency RF spectrum is of increasingly important for wireless communications due to its large available bandwidths that facilitate various applications requiring large-data high-speed transmissions, reaching up to multi-gigabit per second, of vast information. It also resolves the traffic congestion problems of signals from many wireless devices operating in the current RF spectrum (below 6 GHz), hence handling more traffic. Consequently, the wireless communication industries are moving towards 5G (fifth generation) for next-generation communications such as mobile phones, autonomous vehicles, virtual reality, and the Internet of Things (IoT). The U.S. Federal Communications Commission (FCC) proved on 14th July 2016 three frequency bands for 5G around 28, 37 and 39 GHz. We present some silicon-based RFIC power amplifiers (PA) for possible implementation for 5G wireless communications around 28, 37 and 39 GHz. The 16.5-28 GHz PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4±1.2 dBm across 16.5-28 GHz. The 25.5/37-GHz PA exhibits gain of 21.4 and 17 dB, and maximum output power of 16 and 13 dBm at 25.5 and 37 GHz, respectively, in the single-band mode. In the dual-band mode, the maximum output power is 13 and 9.5 dBm at 25.5 and 37 GHz, respectively. The 10-19/23-29/33-40 GHz PA has maximum output powers of 15, 13.3, and 13.8 dBm at 15, 25, and 35 GHz, respectively, in the single-band mode. When this PA is operated in dual-band mode, it has maximum output powers of 11.4/8.2 dBm at 15/25 GHz, 13.3/3 dBm at 15/35 GHz, and 8.7/6.7 dBm at 25/35 GHz. In the tri-band mode, it exhibits 8.8/5.4/3.8 dBm maximum output power at 15/25/35 GHz. Acknowledgement: This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors

Keywords: Microwaves, Millimeter waves, Power Amplifier, Wireless communications

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34 Simulation Analysis of Optical Add Drop Multiplexer in a Ring Network

Authors: Surinder Singh, Meenakshi

Abstract:

In this paper MZI-FBG based optical add drop multiplexer is designed and its performance is analyzed in the ring network. In the ring network nodes are composed of optical add drop multiplexer, transmitter and receiver. OADM is used to add or drop any frequency at intermediate nodes without affecting other channels. In this paper the performance of the ring network is carried out by varying various kinds of fiber with or without amplifiers.

Keywords: OADM, ring network, MZI-FBG, transmitter

Procedia PDF Downloads 376
33 0.13-μm CMOS Vector Modulator for Wireless Backhaul System

Authors: J. S. Kim, N. P. Hong

Abstract:

In this paper, a CMOS vector modulator designed for wireless backhaul system based on 802.11ac is presented. A poly phase filter and sign select switches yield two orthogonal signal paths. Two variable gain amplifiers with strongly reduced phase shift of only ±5 ° are used to weight these paths. It has a phase control range of 360 ° and a gain range of -10 dB to 10 dB. The current drawn from a 1.2 V supply amounts 20.4 mA. Using a 0.13 mm technology, the chip die area amounts 1.47x0.75 mm².

Keywords: CMOS, phase shifter, backhaul, 802.11ac

Procedia PDF Downloads 283
32 First Order Filter Based Current-Mode Sinusoidal Oscillators Using Current Differencing Transconductance Amplifiers (CDTAs)

Authors: S. Summart, C. Saetiaw, T. Thosdeekoraphat, C. Thongsopa

Abstract:

This article presents new current-mode oscillator circuits using CDTAs which is designed from block diagram. The proposed circuits consist of two CDTAs and two grounded capacitors. The condition of oscillation and the frequency of oscillation can be adjusted by electronic method. The circuits have high output impedance and use only grounded capacitors without any external resistor which is very appropriate to future development into an integrated circuit. The results of PSPICE simulation program are corresponding to the theoretical analysis.

Keywords: current-mode, quadrature oscillator, block diagram, CDTA

Procedia PDF Downloads 328
31 Study of Waveguide Silica Glasses by Raman Spectroscopy

Authors: Mohamed Abdelmounim Bakkali, Mustapha El Mataouy, Abellatif Aaliti, Mouhamed Khaddor

Abstract:

In the paper, we study the effects of introducing hafnium oxide on Raman spectra of silica glass planar waveguide activated by 0.3 mol% Er3+ ions. This work compares Raman spectra measured for three thin films deposited on silicon substrate. The films were prepared with different molar ratio of Si/Hf using sol-gel method and deposited by dip coating technique. The effect of hafnium oxide incorporation on the waveguides shows the evolution of the structure of this material. This structural information is useful to understand the luminescence intensity by means of ion–ion interaction mechanisms.

Keywords: optical amplifiers, non-bridging oxygen, erbium, sol-gel, waveguide, silica-hafnia

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30 Thermal Effect in Power Electrical for HEMTs Devices with InAlN/GaN

Authors: Zakarya Kourdi, Mohammed Khaouani, Benyounes Bouazza, Ahlam Guen-Bouazza, Amine Boursali

Abstract:

In this paper, we have evaluated the thermal effect for high electron mobility transistors (HEMTs) heterostructure InAlN/GaN with a gate length 30nm high-performance. It also shows the analysis and simulated these devices, and how can be used in different application. The simulator Tcad-Silvaco software has used for predictive results good for the DC, AC and RF characteristic, Devices offered max drain current 0.67A; transconductance is 720 mS/mm the unilateral power gain of 180 dB. A cutoff frequency of 385 GHz, and max frequency 810 GHz These results confirm the feasibility of using HEMTs with InAlN/GaN in high power amplifiers, as well as thermal places.

Keywords: HEMT, Thermal Effect, Silvaco, InAlN/GaN

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29 Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, voltage transition, node stabilization, biasing circuits

Procedia PDF Downloads 321
28 An Approach To Flatten The Gain Of Fiber Raman Amplifiers With Multi-Pumping

Authors: Surinder Singh, Adish Bindal

Abstract:

The effects of the pumping wavelength and their power on the gain flattening of a fiber Raman amplifier (FRA) are investigated. The multi-wavelength pumping scheme is utilized to achieve gain flatness in FRA. It is proposed that gain flatness becomes better with increase in number of pumping wavelengths applied. We have achieved flat gain with 0.27 dB fluctuation in a spectral range of 1475-1600 nm for a Raman fiber length of 10 km by using six pumps with wavelengths with in the 1385-1495 nm interval. The effect of multi-wavelength pumping scheme on gain saturation in FRA is also studied. It is proposed that gain saturation condition gets improved by using this scheme and this scheme is more useful for higher spans of Raman fiber length.

Keywords: FRA, WDM, pumping, flat gain

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27 Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, multi-inputs, voltage transition, node stabilization, biasing circuits

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26 55 dB High Gain L-Band EDFA Utilizing Single Pump Source

Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

Abstract:

In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: optical amplifiers, EDFA, L-band, optical networks

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25 Sol-Gel Erbium-Doped Silica-Hafnia Planar Waveguides

Authors: Mustapha El Mataouy, Abellatif Aaliti, Mouhamed Khaddor

Abstract:

Erbium actived silica-hafnia planar waveguides have been prepared by sol-gel route. The films were deposited on vitreous silica substrates using dip-coating technique. The parameters of preparation have been chosen to optimize the waveguides for operation in the near infrared (NIR) region, and to increase the luminescence efficiency of the metastable 4I13/2 state of Erbium ions. The waveguides properties were determined by m-lines spectroscopy, loss measurements. Waveguide Raman and luminescence spectroscopy were used to obtain information about the structure of the prepared films and about the dynamical process related to the emission in the C telecom band (1530nm-1565nm) of the Erbium ions. The results are discussed with the aim of comparing the structural and optical properties of Erbium activated silica-hafnia planar waveguides with different molar ratio of Si / Hf.

Keywords: erbium, optical amplifiers, silica-hafnia, sol-gel, waveguide

Procedia PDF Downloads 132
24 Performance Analysis of Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser for Community Access Television

Authors: Ashima Rai

Abstract:

CATV transmission systems have altered from old cable based one-way analog video transmission to two ways hybrid fiber transmission. The use of optical fiber reduces the RF amplifiers in the transmission, high transmission power or lower fiber transmission losses are required to increase system capability. This paper evaluates and compares Distributed Feedback (DFB) laser and Vertical Cavity Surface Emitting Laser (VCSEL) for CATV transmission. The simulation results exhibit the better performer among both lasers taking into consideration the parameters chosen for evaluation.

Keywords: Distributed Feedback (DFB), Vertical Cavity Surface Emitting Laser (VCSEL), Community Access Television (CATV), Composite Second Order (CSO), Composite Triple Beat (CTB), RF

Procedia PDF Downloads 243
23 Behavioral and EEG Reactions in Native Turkic-Speaking Inhabitants of Siberia and Siberian Russians during Recognition of Syntactic Errors in Sentences in Native and Foreign Languages

Authors: Tatiana N. Astakhova, Alexander E. Saprygin, Tatyana A. Golovko, Alexander N. Savostyanov, Mikhail S. Vlasov, Natalia V. Borisova, Alexandera G. Karpova, Urana N. Kavai-ool, Elena D. Mokur-ool, Nikolay A. Kolchanov, Lubomir I. Aftanas

Abstract:

The aim of the study is to compare behaviorally and EEG reactions in Turkic-speaking inhabitants of Siberia (Tuvinians and Yakuts) and Russians during the recognition of syntax errors in native and foreign languages. 63 healthy aboriginals of the Tyva Republic, 29 inhabitants of the Sakha (Yakutia) Republic, and 55 Russians from Novosibirsk participated in the study. All participants completed a linguistic task, in which they had to find a syntax error in the written sentences. Russian participants completed the task in Russian and in English. Tuvinian and Yakut participants completed the task in Russian, English, and Tuvinian or Yakut, respectively. EEG’s were recorded during the solving of tasks. For Russian participants, EEG's were recorded using 128-channels. The electrodes were placed according to the extended International 10-10 system, and the signals were amplified using ‘Neuroscan (USA)’ amplifiers. For Tuvinians and Yakuts EEG's were recorded using 64-channels and amplifiers Brain Products, Germany. In all groups 0.3-100 Hz analog filtering, sampling rate 1000 Hz were used. Response speed and the accuracy of recognition error were used as parameters of behavioral reactions. Event-related potentials (ERP) responses P300 and P600 were used as indicators of brain activity. The accuracy of solving tasks and response speed in Russians were higher for Russian than for English. The P300 amplitudes in Russians were higher for English; the P600 amplitudes in the left temporal cortex were higher for the Russian language. Both Tuvinians and Yakuts have no difference in accuracy of solving tasks in Russian and in their respective national languages (Tuvinian and Yakut). However, the response speed was faster for tasks in Russian than for tasks in their national language. Tuvinians and Yakuts showed bad accuracy in English, but the response speed was higher for English than for Russian and the national languages. With Tuvinians, there were no differences in the P300 and P600 amplitudes and in cortical topology for Russian and Tuvinian, but there was a difference for English. In Yakuts, the P300 and P600 amplitudes and topology of ERP for Russian were the same as Russians had for Russian. In Yakuts, brain reactions during Yakut and English comprehension had no difference and were reflected foreign language comprehension -while the Russian language comprehension was reflected native language comprehension. We found out that the Tuvinians recognized both Russian and Tuvinian as native languages, and English as a foreign language. The Yakuts recognized both English and Yakut as a foreign language, only Russian as a native language. According to the inquirer, both Tuvinians and Yakuts use the national language as a spoken language, whereas they don’t use it for writing. It can well be a reason that Yakuts perceive the Yakut writing language as a foreign language while writing Russian as their native.

Keywords: EEG, language comprehension, native and foreign languages, Siberian inhabitants

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22 Event-Related Potentials and Behavioral Reactions during Native and Foreign Languages Comprehension in Bilingual Inhabitants of Siberia

Authors: Tatiana N. Astakhova, Alexander E. Saprygin, Tatyana A. Golovko, Alexander N. Savostyanov, Mikhail S. Vlasov, Natalia V. Borisova, Alexandera G. Karpova, Urana N. Kavai-ool, Elena D. Mokur-ool, Nikolay A. Kolchanov, Lubomir I. Aftanas

Abstract:

The study is dedicated to the research of brain activity in bilingual inhabitants of Siberia. We compared behavioral reactions and event-related potentials in Turkic-speaking inhabitants of Siberia (Tuvinians and Yakuts) and Russians. 63 healthy aboriginals of the Tyva Republic, 29 inhabitants of the Sakha (Yakutia) Republic, and 55 Russians from Novosibirsk participated in the study. All the healthy and right-handed participants, matched on age and sex, were students of different universities. EEG’s were recorded during the solving of linguistic tasks. In these tasks, participants had to find a syntax error in the written sentences. There were four groups of sentences: Russian, English, Tuvinian, and Yakut. All participants completed the tasks in Russian and English. Additionally, Tuvinians and Yakuts completed the tasks in Tuvinian or Yakut respectively. For Russians, EEG's were recorded using 128-channels according to the extended International 10-10 system, and the signals were amplified using “Neuroscan (USA)” amplifiers. For Tuvinians and Yakuts, EEG's were recorded using 64-channels and amplifiers Brain Products, Germany. In all groups, 0.3-100 Hz analog filtering and sampling rate 1000 Hz were used. As parameters of behavioral reactions, response speed and the accuracy of recognition were used. Event-related potentials (ERP) responses P300 and P600 were used as indicators of brain activity. The behavioral reactions showed that in Russians, the response speed for Russian was faster than for English. Also, the accuracy of solving tasks was higher for Russian than for English. The peak P300 in Russians were higher for English, the peak P600 in the left temporal cortex were higher for the Russian language. Both Tuvinians and Yakuts have no difference in accuracy of solving tasks in Russian and in their respective national languages. However, the response speed was faster for tasks in Russian than for tasks in their national language. Tuvinians and Yakuts showed bad accuracy in English, but the response speed was higher for English than for Russian and the national languages. This can be explained by the fact that they did not think carefully and gave a random answer for English. In Tuvinians, The P300 and P600 amplitudes and cortical topology were the same for Russian and Tuvinian and different for English. In Yakuts, the P300 and P600 amplitudes and topology of ERP for Russian were the same as what Russians had for Russian. In Yakuts, brain reactions during Yakut and English comprehension had no difference, and were reflected to foreign language comprehension - while the Russian language comprehension was reflected to native language comprehension. We found out that the Tuvinians recognized both Russian and Tuvinian as native languages, and English as a foreign language. The Yakuts recognized both English and Yakut as a foreign language, and only Russian as a native language. According to the inquirer, both Tuvinians and Yakuts use the national language as a spoken language, whereas they don’t use it for writing. It can well be a reason that Yakuts perceive the Yakut writing language as a foreign language while writing Russian as their native.

Keywords: EEG, ERP, native and foreign languages comprehension, Siberian inhabitants

Procedia PDF Downloads 440
21 Design Of High Sensitivity Transceiver for WSN

Authors: A. Anitha, M. Aishwariya

Abstract:

The realization of truly ubiquitous wireless sensor networks (WSN) demands Ultra-low power wireless communication capability. Because the radio transceiver in a wireless sensor node consumes more power when compared to the computation part it is necessary to reduce the power consumption. Hence, a low power transceiver is designed and implemented in a 120 nm CMOS technology for wireless sensor nodes. The power consumption of the transceiver is reduced still by maintaining the sensitivity. The transceiver designed combines the blocks including differential oscillator, mixer, envelope detector, power amplifiers, and LNA. RF signal modulation and demodulation is carried by On-Off keying method at 2.4 GHz which is said as ISM band. The transmitter demonstrates an output power of 2.075 mW while consuming a supply voltage of range 1.2 V-5.0 V. Here the comparison of LNA and power amplifier is done to obtain an amplifier which produces a high gain of 1.608 dB at receiver which is suitable to produce a desired sensitivity. The multistage RF amplifier is used to improve the gain at the receiver side. The power dissipation of the circuit is in the range of 0.183-0.323 mW. The receiver achieves a sensitivity of about -95 dBm with data rate of 1 Mbps.

Keywords: CMOS, envelope detector, ISM band, LNA, low power electronics, PA, wireless transceiver

Procedia PDF Downloads 392
20 Impact of Hard Limited Clipping Crest Factor Reduction Technique on Bit Error Rate in OFDM Based Systems

Authors: Theodore Grosch, Felipe Koji Godinho Hoshino

Abstract:

In wireless communications, 3GPP LTE is one of the solutions to meet the greater transmission data rate demand. One issue inherent to this technology is the PAPR (Peak-to-Average Power Ratio) of OFDM (Orthogonal Frequency Division Multiplexing) modulation. This high PAPR affects the efficiency of power amplifiers. One approach to mitigate this effect is the Crest Factor Reduction (CFR) technique. In this work, we simulate the impact of Hard Limited Clipping Crest Factor Reduction technique on BER (Bit Error Rate) in OFDM based Systems. In general, the results showed that CFR has more effects on higher digital modulation schemes, as expected. More importantly, we show the worst-case degradation due to CFR on QPSK, 16QAM, and 64QAM signals in a linear system. For example, hard clipping of 9 dB results in a 2 dB increase in signal to noise energy at a 1% BER for 64-QAM modulation.

Keywords: bit error rate, crest factor reduction, OFDM, physical layer simulation

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19 A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB Noise Figure in 0.1 µm Galium Arsenide Technology

Authors: Mantas Sakalas, Paulius Sakalas

Abstract:

This paper presents an analysis and design of a ultrawideband 1.8GHz to 43GHz Low Noise Amplifier (LNA) in 0.1 μm Galium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology. The feedback based bandwidth extension techniques is analyzed and based on the outcome, a two stage LNA is designed. The impedance fine tuning is implemented by using Transmission Line (TL) structures. The measured performance shows a good agreement with simulation results and an outstanding wideband noise matching. The measured small signal gain was 12 dB, whereas a 3 dB gain flatness in range from 1.8 - 43 GHz was reached. The noise figure was below 4 dB almost all over the entire frequency band of 1.8GHz to 43GHz, the output power at 1 dB compression point was 6 dBm and the DC power consumption was 95 mW. To the best knowledge of the authors the designed LNA outperforms the State of the Art (SotA) reported LNA designs in terms of combined parameters of noise figure within the addressed ultra-wide 3 dB bandwidth, linearity and DC power consumption.

Keywords: feedback amplifiers, GaAs pHEMT, monolithic microwave integrated circuit, LNA, noise matching

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18 Analysis of Nonlinear Pulse Propagation Characteristics in Semiconductor Optical Amplifier for Different Input Pulse Shapes

Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

Abstract:

This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier

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17 A Test Methodology to Measure the Open-Loop Voltage Gain of an Operational Amplifier

Authors: Maninder Kaur Gill, Alpana Agarwal

Abstract:

It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values.

Keywords: Device Under Test (DUT), open loop voltage gain, operational amplifier, test circuit

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16 Multicasting Characteristics of All-Optical Triode Based on Negative Feedback Semiconductor Optical Amplifiers

Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multi-casting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multi-casting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multi-casting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier

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15 CFD modelling of Microdrops Manipulation by Microfluidic Oscillator

Authors: Tawfiq Chekifi, Brahim Dennai, Rachid Khelfaoui

Abstract:

Over the last few decades, modeling immiscible fluids such as oil and water have been a classical research topic. Droplet-based microfluidics presents a unique platform for mixing, reaction, separation, dispersion of drops, and numerous other functions. For this purpose, several devices were studied, as well as microfluidic oscillator. The latter was obtained from wall attachment microfluidic amplifiers using a feedback loop from the outputs to the control inputs, nevertheless this device have not well used for microdrops applications. In this paper, we suggest a numerical CFD study of a microfluidic oscillator with two different lengths of feedback loop. In order to produce simultaneous microdrops of gasoil on water, a typical geometry that includes double T-junction is connected to the fluidic oscillator. The generation of microdrops is computed by volume-of-fluid method (VOF). Flow oscillations of microdrops were triggered by the Coanda effect of jet flow. The aim of work is to obtain a high oscillation frequency in output of this passive device, the influence of hydrodynamics and physics parameters on the microdrops frequency in the output of our microsystem is also analyzed, The computational results show that, the length of feedback loop, applied pressure on T-junction and interfacial tension have a significant effect on the dispersion of microdrops and its oscillation frequency. Across the range of low Reynold number, the microdrops generation and its dynamics have been accurately controlled by adjusting applying pressure ratio of two phases.

Keywords: fluidic oscillator, microdrops manipulation, VOF (volume of fluid method), microfluidic oscillator

Procedia PDF Downloads 286