Search results for: voltage unbalance factor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2408

Search results for: voltage unbalance factor

2048 Harmonic Analysis of 240 V AC Power Supply using TMS320C6713 DSK

Authors: Dody Ismoyo, Mohammad Awan, Norashikin Yahya

Abstract:

The presence of harmonic in power system is a major concerned to power engineers for many years. With the increasing usage of nonlinear loads in power systems, the harmonic pollution becomes more serious. One of the widely used computation algorithm for harmonic analysis is fast Fourier transform (FFT). In this paper, a harmonic analyzer using FFT was implemented on TMS320C6713 DSK. The supply voltage of 240 V 59 Hz is stepped down to 5V using a voltage divider in order to match the power rating of the DSK input. The output from the DSK was displayed on oscilloscope and Code Composer Studio™ software. This work has demonstrated the possibility of analyzing the 240V power supply harmonic content using the DSK board.

Keywords: Harmonic Analysis, DSP.

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2047 Application of STATCOM-SMES Compensator for Power System Dynamic Performance Improvement

Authors: Reza Sedaghati, Mojtaba Hakimzadeh, Mohammad Hasan Raouf, Mostafa Mirzadeh

Abstract:

Nowadays the growth of distributed generation within the bulk power system is feasible by using the optimal control of the transmission lines power flow. Static Synchronous Compensators (STATCOM) is effective for improving voltage stability but it can only exchange reactive power with the power grid. The integration of Superconducting Magnetic Energy Storage (SMES) with a STATCOM can extend the traditional STATCOM capabilities to four-quadrant bulk power system power flow control and providing exchange both the active and reactive power related to the STATCOM with the ac network. This paper shows how the SMES system can be connected to the ac system via the DC bus of a STATCOM and also analyzes how the integration of STATCOM and SMES allows the bus voltage regulation and power oscillation damping (POD) to be achieved simultaneously. The dynamic performance of the integrated STATCOM-SMES is evaluated through simulation by using PSCAD/EMTDC software and the compensation effectiveness of this integrated compensator is shown.

Keywords: STATCOM-SMES compensator, Power Oscillation Damping (POD), stabilizing, signal, voltage.

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2046 Simulation of Voltage Controlled Tunable All Pass Filter Using LM13700 OTA

Authors: Bhaba Priyo Das, Neville Watson, Yonghe Liu

Abstract:

In recent years Operational Transconductance Amplifier based high frequency integrated circuits, filters and systems have been widely investigated. The usefulness of OTAs over conventional OP-Amps in the design of both first order and second order active filters are well documented. This paper discusses some of the tunability issues using the Matlab/Simulink® software which are previously unreported for any commercial OTA. Using the simulation results two first order voltage controlled all pass filters with phase tuning capability are proposed.

Keywords: All pass filter, Operational Transconductance Amplifier, Simulation.

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2045 Analysis of Socio-Cultural Obstacles for Dissemination of Nanotechnology from Iran's Agricultural Experts Perspective

Authors: S. M. Mirdamadi, S. Esmaeili, S. A. Tohidloo

Abstract:

The main purpose of this research was to analyze Socio-Cultural obstacles of disseminating of nanotechnology in Iran's agricultural section. One hundred twenty eight out of a total of 190 researchers with different levels of expertise in and familiarity with nanotechnology were randomly selected and questionnaires completed by them. Face validity have been done by expert's suggestion and correction, reliability by using Cronbakh-Alpha formula. The results of a factor analysis showed variation for different factors. For cultural factors 19/475 percent, for management 13/139 percent, information factor 11/277 percent, production factor 9/703 percent, social factor 9/267 percent, and for attitude factor it became 8/947 percent. Also results indicated that socio-cultural factors were the most important obstacle for nanotechnology dissemination in agricultural section in Iran.

Keywords: Agriculture, Iran, nanotechnology, public perception, social-cultural obstacles.

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2044 Physical Parameters for Reliability Evaluation

Authors: Tazibt W., Mialhe P.

Abstract:

This paper presents ageing experiments controlled by the evolution of junction parameters. The deterioration of the device is related to high injection effects which modified the transport mechanisms in the space charge region of the junction. Physical phenomena linked to the degradation of junction parameters that affect the devices reliability are reported and discussed. We have used the method based on numerical analysis of experimental current-voltage characteristic of the junction, in order to extract the electrical parameters. The simultaneous follow-up of the evolutions of the series resistance and of the transition voltage allow us to introduce a new parameter for reliability evaluation.

Keywords: High injection, junction, parameters, reliability

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2043 Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage

Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

Abstract:

The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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2042 Investigation of Constant Transconductance Circuit for Low Power Low-Noise Amplifier

Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

Abstract:

In this paper, the design of wide-swing constant transconductance (gm) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (Gm) generated by the constant gm bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in Gm with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the gm variation is eventually concluded at between -3 % to 7 %. With the slight variation in the gm value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S21) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant gm circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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2041 Pull-In Instability Determination of Microcapacitive Sensor for Measuring Special Range of Pressure

Authors: Yashar Haghighatfar, Shahrzad Mirhosseini

Abstract:

Pull-in instability is a nonlinear and crucial effect that is important for the design of microelectromechanical system devices. In this paper, the appropriate electrostatic voltage range is determined by measuring fluid flow pressure via micro pressure sensor based microbeam. The microbeam deflection contains two parts, the static and perturbation deflection of static. The second order equation regarding the equivalent stiffness, mass and damping matrices based on Galerkin method is introduced to predict pull-in instability due to the external voltage. Also the reduced order method is used for solving the second order nonlinear equation of motion. Furthermore, in the present study, the micro capacitive pressure sensor is designed for measuring special fluid flow pressure range. The results show that the measurable pressure range can be optimized, regarding damping field and external voltage.

Keywords: MEMS, pull-in instability, electrostatically actuated microbeam, reduced order method.

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2040 Determining the Maximum Lateral Displacement Due to Sever Earthquakes without Using Nonlinear Analysis

Authors: Mussa Mahmoudi

Abstract:

For Seismic design, it is important to estimate, maximum lateral displacement (inelastic displacement) of the structures due to sever earthquakes for several reasons. Seismic design provisions estimate the maximum roof and storey drifts occurring in major earthquakes by amplifying the drifts of the structures obtained by elastic analysis subjected to seismic design load, with a coefficient named “displacement amplification factor" which is greater than one. Here, this coefficient depends on various parameters, such as ductility and overstrength factors. The present research aims to evaluate the value of the displacement amplification factor in seismic design codes and then tries to propose a value to estimate the maximum lateral structural displacement from sever earthquakes, without using non-linear analysis. In seismic codes, since the displacement amplification is related to “force reduction factor" hence; this aspect has been accepted in the current study. Meanwhile, two methodologies are applied to evaluate the value of displacement amplification factor and its relation with the force reduction factor. In the first methodology, which is applied for all structures, the ratio of displacement amplification and force reduction factors is determined directly. Whereas, in the second methodology that is applicable just for R/C moment resisting frame, the ratio is obtained by calculating both factors, separately. The acquired results of these methodologies are alike and estimate the ratio of two factors from 1 to 1.2. The results indicate that the ratio of the displacement amplification factor and the force reduction factor differs to those proposed by seismic provisions such as NEHRP, IBC and Iranian seismic code (standard no. 2800).

Keywords: Displacement amplification factor, Ductility factor, Force reduction factor, Maximum lateral displacement.

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2039 CMOS Positive and Negative Resistors Based on Complementary Regulated Cascode Topology with Cross-Coupled Regulated Transistors

Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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2038 Loading Factor Performance of a Centrifugal Compressor Impeller: Specific Features and Way of Modeling

Authors: K. Soldatova, Y. Galerkin

Abstract:

A loading factor performance is necessary for the modeling of centrifugal compressor gas dynamic performance curve. Measured loading factors are linear function of a flow coefficient at an impeller exit. The performance does not depend on the compressibility criterion. To simulate loading factor performances, the authors present two parameters: a loading factor at zero flow rate and an angle between an ordinate and performance line. The calculated loading factor performances of non-viscous are linear too and close to experimental performances. Loading factor performances of several dozens of impellers with different blade exit angles, blade thickness and number, ratio of blade exit/inlet height, and two different type of blade mean line configuration. There are some trends of influence, which are evident – comparatively small blade thickness influence, and influence of geometry parameters is more for impellers with bigger blade exit angles, etc. Approximating equations for both parameters are suggested. The next phase of work will be simulating of experimental performances with the suggested approximation equations as a base.

Keywords: Centrifugal compressor stage, centrifugal compressor, loading factor, gas dynamic performance curve.

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2037 Design and Analysis of an 8T Read Decoupled Dual Port SRAM Cell for Low Power High Speed Applications

Authors: Ankit Mitra

Abstract:

Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characterized it in terms of read and write delay, read and write noise margins, Data Retention Voltage and Leakage Current. Read Decoupling improves the Read Noise Margin and static power dissipation is reduced by using Dual-Vt transistors. The results obtained are compared with existing 6T, 8T, 9T SRAM Cells, which shows the superiority of the proposed design. The Cell is designed and simulated in TSPICE using 90nm CMOS process.

Keywords: CMOS, Dual-Port, Data Retention Voltage, 8T SRAM, Leakage Current, Noise Margin, Loop-cutting, Single-ended.

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2036 ZnS and Graphene Quantum Dots Nanocomposite as Potential Electron Acceptor for Photovoltaics

Authors: S. M. Giripunje, Shikha Jindal

Abstract:

Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 104 times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.

Keywords: Graphene, mobility, nanocomposites, photovoltaics, quantum dots, zinc sulphide.

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2035 Investigation of the Effect of Impulse Voltage to Flashover by Using Water Jet

Authors: Harun Gülan, Muhsin Tunay Gencoglu, Mehmet Cebeci

Abstract:

The main function of the insulators used in high voltage (HV) transmission lines is to insulate the energized conductor from the pole and hence from the ground. However, when the insulators fail to perform this insulation function due to various effects, failures occur. The deterioration of the insulation results either from breakdown or surface flashover. The surface flashover is caused by the layer of pollution that forms conductivity on the surface of the insulator, such as salt, carbonaceous compounds, rain, moisture, fog, dew, industrial pollution and desert dust. The source of the majority of failures and interruptions in HV lines is surface flashover. This threatens the continuity of supply and causes significant economic losses. Pollution flashover in HV insulators is still a serious problem that has not been fully resolved. In this study, a water jet test system has been established in order to investigate the behavior of insulators under dirty conditions and to determine their flashover performance. Flashover behavior of the insulators is examined by applying impulse voltages in the test system. This study aims to investigate the insulator behaviour under high impulse voltages. For this purpose, a water jet test system was installed and experimental results were obtained over a real system and analyzed. By using the water jet test system instead of the actual insulator, the damage to the insulator as a result of the flashover that would occur under impulse voltage was prevented. The results of the test system performed an important role in determining the insulator behavior and provided predictability.

Keywords: Insulator, pollution flashover, high impulse voltage, water jet model.

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2034 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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2033 Quasi Multi-Pulse Back-to-Back Static Synchronous Compensator Employing Line Frequency Switching 2-Level GTO Inverters

Authors: A.M. Vural, K.C. Bayindir

Abstract:

Back-to-back static synchronous compensator (BtBSTATCOM) consists of two back-to-back voltage-source converters (VSC) with a common DC link in a substation. This configuration extends the capabilities of conventional STATCOM that bidirectional active power transfer from one bus to another is possible. In this paper, VSCs are designed in quasi multi-pulse form in which GTOs are triggered only once per cycle in PSCAD/EMTDC. The design details of VSCs as well as gate switching circuits and controllers are fully represented. Regulation modes of BtBSTATCOM are verified and tested on a multi-machine power system through different simulation cases. The results presented in the form of typical time responses show that practical PI controllers are almost robust and stable in case of start-up, set-point change, and line faults.

Keywords: Flexible AC Transmission Systems (FACTS), Backto-Back Static Synchronous Compensator (BtB-STATCOM), quasi multi-pulse voltage source converter, active power transfer; voltage control.

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2032 Connectivity Characteristic of Transcription Factor

Authors: T. Mahalakshmi, Aswathi B. L., Achuthsankar S. Nair

Abstract:

Transcription factors are a group of proteins that helps for interpreting the genetic information in DNA. Protein-protein interactions play a major role in the execution of key biological functions of a cell. These interactions are represented in the form of a graph with nodes and edges. Studies have showed that some nodes have high degree of connectivity and such nodes, known as hub nodes, are the inevitable parts of the network. In the present paper a method is proposed to identify hub transcription factor proteins using sequence information. On a complete data set of transcription factor proteins available from the APID database, the proposed method showed an accuracy of 77%, sensitivity of 79% and specificity of 76%.

Keywords: Transcription Factor Proteins, Hub Proteins, Shannon Index, Transfer Free Energy to Surface (TFES).

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2031 Evaluation of the Power Generation Effect Obtained by Inserting a Piezoelectric Sheet in the Backlash Clearance of a Circular Arc Helical Gear

Authors: Barenten Suciu, Yuya Nakamoto

Abstract:

Power generation effect, obtained by inserting a piezo- electric sheet in the backlash clearance of a circular arc helical gear, is evaluated. Such type of screw gear is preferred since, in comparison with the involute tooth profile, the circular arc profile leads to reduced stress-concentration effects, and improved life of the piezoelectric film. Firstly, geometry of the circular arc helical gear, and properties of the piezoelectric sheet are presented. Then, description of the test-rig, consisted of a right-hand thread gear meshing with a left-hand thread gear, and the voltage measurement procedure are given. After creating the tridimensional (3D) model of the meshing gears in SolidWorks, they are 3D-printed in acrylonitrile butadiene styrene (ABS) resin. Variation of the generated voltage versus time, during a meshing cycle of the circular arc helical gear, is measured for various values of the center distance. Then, the change of the maximal, minimal, and peak-to-peak voltage versus the center distance is illustrated. Optimal center distance of the gear, to achieve voltage maximization, is found and its significance is discussed. Such results prove that the contact pressure of the meshing gears can be measured, and also, the electrical power can be generated by employing the proposed technique.

Keywords: Power generation, circular arc helical gear, piezo- electric sheet, contact problem, optimal center distance.

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2030 Force on a High Voltage Capacitor with Asymmetrical Electrodes

Authors: Jiří Primas, Michal Malík, Darina Jašíková, Václav Kopecký

Abstract:

When a high DC voltage is applied to a capacitor with strongly asymmetrical electrodes, it generates a mechanical force that affects the whole capacitor. This phenomenon is most likely to be caused by the motion of ions generated around the smaller of the two electrodes and their subsequent interaction with the surrounding medium. A method to measure this force has been devised and used. A formula describing the force has also been derived. After comparing the data gained through experiments with those acquired using the theoretical formula, a difference was found above a certain value of current. This paper also gives reasons for this difference.

Keywords: Capacitor with asymmetrical electrodes, Electricalfield, Mechanical force, Motion of ions.

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2029 Understanding Charge Dynamics in Elastomers Adopting Pulsed Electro Acoustic (PEA) Technique

Authors: R. Sarathi, M. G. Danikas, Y. Chen, T. Tanaka

Abstract:

In the present work, Pulsed Electro Acoustic (PEA) technique was adopted to understand the space charge dynamics in elastomeric material. It is observed that the polarity of the applied DC voltage voltage and its magnitude alters the space charge dynamics in insulation structure. It is also noticed that any addition of compound to the base material/processing technique have characteristic variation in the space charge injection process. It could be concluded based on the present work that the plasticizer could inject heterocharges into the insulation medium. Also it is realized that space charge magnitude is less with the addition of plasticizer. In the PEA studies, it is observed that local electric field in the insulating material can be much more than applied electric field due to space charge formation. One of the important conclusions arrived at based on PEA technique is that one could understand the safe operating electric field of an insulation material and the charge trap sites.

Keywords: Pulsed electro acoustic technique, space charge, DCvoltage, elastomers, Electric field, high voltage.

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2028 Robust Parameter and Scale Factor Estimation in Nonstationary and Impulsive Noise Environment

Authors: Zoran D. Banjac, Branko D. Kovacevic

Abstract:

The problem of FIR system parameter estimation has been considered in the paper. A new robust recursive algorithm for simultaneously estimation of parameters and scale factor of prediction residuals in non-stationary environment corrupted by impulsive noise has been proposed. The performance of derived algorithm has been tested by simulations.

Keywords: Adaptive filtering, Non-Gaussian filtering, Robustestimation, Scale factor estimation.

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2027 A Direct Down-conversion Receiver for Low-power Wireless Sensor Networks

Authors: Gianluca Cornetta, Abdellah Touhafi, David J. Santos, Jose Manuel Vazquez

Abstract:

A direct downconversion receiver implemented in 0.13 μm 1P8M process is presented. The circuit is formed by a single-end LNA, an active balun for conversion into balanced mode, a quadrature double-balanced passive switch mixer and a quadrature voltage-controlled oscillator. The receiver operates in the 2.4 GHz ISM band and complies with IEEE 802.15.4 (ZigBee) specifications. The circuit exhibits a very low noise figure of only 2.27 dB and dissipates only 14.6 mW with a 1.2 V supply voltage and is hence suitable for low-power applications.

Keywords: LNA, Active Balun, Passive Mixer, VCO, IEEE 802.15.4(ZigBee).

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2026 Hysteresis Modulation Based Sliding Mode Control for Positive Output Elementary Super Lift Luo Converter

Authors: K. Ramash Kumar, S. Jeevananthan

Abstract:

The Object of this paper is to design and analyze a Hysteresis modulation based sliding mode control (HMSMC) for positive output elementary super lift Luo converter (POESLLC), which is the start-of-the-art DC-DC converter. The positive output elementary super lift Luo converter performs the voltage conversion from positive source voltage to positive load voltage. This paper proposes a HMSMC capable of providing the good steady state and dynamic performance compared to conventional controllers. Dynamic equations describing the positive output elementary super lift luo converter are derived by using state space average method. The simulation model of the positive output elementary super lift Luo converter with its control circuit is implemented in Matlab/Simulink. The HMSMC for positive output elementary super lift Luo converter is tested for line changes, load changes and also for components variations.

Keywords: DC-DC converter, Positive output elementarysuper lift Luo converter (POESLLC), Hysteresis modulation basedsliding mode control (HMSMC).

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2025 Safety Compliance of Substation Earthing Design

Authors: A. Hellany, M.Nagrial, M. Nassereddine, J. Rizk

Abstract:

As new challenges emerge in power electrical workplace safety, it is the responsibility of the systems designer to seek out new approaches and solutions that address them. Design decisions made today will impact cost, safety and serviceability of the installed systems for 40 or 50 years during the useful life for the owner. Studies have shown that this cost is an order of magnitude of 7 to 10 times the installed cost of the power distribution equipment. This paper reviews some aspects of earthing system design in power substation surrounded by residential houses. The electrical potential rise and split factors are discussed and a few recommendations are provided to achieve a safety voltage in the area beyond the boundary of the substation.

Keywords: EPR, Split Factor, Earthing Design

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2024 Hybrid Pulse Width Modulation Techniques for the Reduction of Switching Losses and Voltage Harmonics in Cascaded Multilevel Inverters

Authors: Venkata Reddy Kota

Abstract:

These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.

Keywords: Hybrid PWM techniques, Cascaded Multilevel Inverters, Switching loss minimization.

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2023 Analysis and Circuit Modeling of APDs

Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar

Abstract:

In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.

Keywords: Optical communication systems (OCS), Circuit modeling, breakdown voltage, SAGCM APD

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2022 Electrical Field Around the Overhead Transmission Lines

Authors: S.S. Razavipour, M. Jahangiri, H. Sadeghipoor

Abstract:

In this paper, the computation of the electrical field distribution around AC high-voltage lines is demonstrated. The advantages and disadvantages of two different methods are described to evaluate the electrical field quantity. The first method is a seminumerical method using the laws of electrostatic techniques to simulate the two-dimensional electric field under the high-voltage overhead line. The second method which will be discussed is the finite element method (FEM) using specific boundary conditions to compute the two- dimensional electric field distributions in an efficient way.

Keywords: Electrical field, unloaded transmission lines, finite element method, electrostatic images technique.

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2021 A Digital Pulse-Width Modulation Controller for High-Temperature DC-DC Power Conversion Application

Authors: Jingjing Lan, Jun Yu, Muthukumaraswamy Annamalai Arasu

Abstract:

This paper presents a digital non-linear pulse-width modulation (PWM) controller in a high-voltage (HV) buck-boost DC-DC converter for the piezoelectric transducer of the down-hole acoustic telemetry system. The proposed design controls the generation of output signal with voltage higher than the supply voltage and is targeted to work under high temperature. To minimize the power consumption and silicon area, a simple and efficient design scheme is employed to develop the PWM controller. The proposed PWM controller consists of serial to parallel (S2P) converter, data assign block, a mode and duty cycle controller (MDC), linearly PWM (LPWM) and noise shaper, pulse generator and clock generator. To improve the reliability of circuit operation at higher temperature, this design is fabricated with the 1.0-μm silicon-on-insulator (SOI) CMOS process. The implementation results validated that the proposed design has the advantages of smaller size, lower power consumption and robust thermal stability.

Keywords: DC-DC power conversion, digital control, high temperatures, pulse-width modulation.

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2020 Design a Low Voltage- Low Offset Class AB Op-Amp

Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari

Abstract:

A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.

Keywords: Low-voltage op amp, design , optimum design

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2019 Artificial Accelerated Ageing Test of 22 kVXLPE Cable for Distribution System Applications in Thailand

Authors: A. Rawangpai, B. Maraungsri, N. Chomnawang

Abstract:

This paper presents the experimental results on artificial ageing test of 22 kV XLPE cable for distribution system application in Thailand. XLPE insulating material of 22 kV cable was sliced to 60-70 μm in thick and was subjected to ac high voltage at 23 Ôùª C, 60 Ôùª C and 75 Ôùª C. Testing voltage was constantly applied to the specimen until breakdown. Breakdown voltage and time to breakdown were used to evaluate life time of insulating material. Furthermore, the physical model by J. P. Crine for predicts life time of XLPE insulating material was adopted as life time model and was calculated in order to compare the experimental results. Acceptable life time results were obtained from Crine-s model comparing with the experimental result. In addition, fourier transform infrared spectroscopy (FTIR) for chemical analysis and scanning electron microscope (SEM) for physical analysis were conducted on tested specimens.

Keywords: Artificial accelerated ageing test, XLPE cable, distribution system, insulating material, life time, life time model

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