Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30455
Physical Parameters for Reliability Evaluation

Authors: Tazibt W., Mialhe P.

Abstract:

This paper presents ageing experiments controlled by the evolution of junction parameters. The deterioration of the device is related to high injection effects which modified the transport mechanisms in the space charge region of the junction. Physical phenomena linked to the degradation of junction parameters that affect the devices reliability are reported and discussed. We have used the method based on numerical analysis of experimental current-voltage characteristic of the junction, in order to extract the electrical parameters. The simultaneous follow-up of the evolutions of the series resistance and of the transition voltage allow us to introduce a new parameter for reliability evaluation.

Keywords: Reliability, parameters, junction, High injection

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1058569

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1018

References:


[1] D. Schmitt-Landsiedel, and C. Werner, "Innovative devices for integrated circuits- A design perspective", Solid-State Electronics, Vol. 53, 2009, pp. 411-417.
[2] D.M. Fleetwood, M.P. Rodgers, L.Tsetseris, X.J. Zhou, I.Batyrev, S. Wang, R.D.Schrimpf, and S.T. Pantelides, "Effects of device aging on microelectronics radiation response and reliability", Microelectron.Reliab, Vol. 47, 2007, pp. 1075-1085.
[3] D.M.Fleetwood, "Effects of hydrogen transport and reactions on microelectronics radiation response and reliability", Microelectron.Reliab, Vol. 42, 2002, pp. 523-541.
[4] L.Le Bras, M.Bendada, P. Mialhe, E.Blampain and J.PCharles, "Recombination via radiative induced defects in field effect transistor", J.Appl.Phys, Vol. 76, 1984, pp. 5676-80.
[5] E.Ben.dada, M. De la Bardonnie, P. Mialhe and J.P.Charles, "Diode ideality factor for MOSFETS characterization of dose effect", Radiat.Eff. Defects Solids, Vol. 138, 1996, pp 39-48.
[6] D.M. Fleetwood, S.L.Kosier, R.N. Nowlin, R.D. Schrimpf, R.A. Reber, M.Delaus, P.S.Winokur, A. Wei, W.E.Combs, and R.L.Pease, " Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates", IEEE Trans.Nucl. Sci, Vol.41, 1994, pp. 1871-83.
[7] C.Salamé, P. Mialhe, J.P. Charles and A. Khoury, "N-Channel power MOSFET for fast neutron detection", Microelectron. Int, Vol.19, 2002, pp. 19-22.
[8] H.P.Hjalmarson, R.L. Pease, C.E. Hembree, R.M. Van Ginhoven, and P.A. Schultz, "Dose rate dependence of radiation induced interface trap density in Silicon bipolar transistor",Nucl.Instrum. Methods.Phys.Rev B, Vol. 250, 2006 pp. 269-273.
[9] C.Picard, C.Brisset, A. Hoffman, J.P. Charles, F. Joffre, L. Adams, and H.A. Siedle, "Use of electrical stress and isochronal annealing on power MOSFETs in order to characterise the effects of Co60 irradiation", Microelectron. Reliab, Vol. 40, 2000, pp. 1647-1652.
[10] G.Wenping, , C.Chi, , D.Huantao, , H.Yue, , Z.Jincheng, W.Chong, , F.Qian, , and M.Xiaohua, , " 60Co ╬│-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors.", J. Semiconductors, Vol. 30, 2009, pp. 1-5.
[11] W. Tazibt, P.Mialhe, J.P. Charles, and M.A. Belkhir, "A junction characterization for microelectronic devices quality and reliability", Microelectron.Reliab, Vol. 48, 2008, pp. 348-353.
[12] C.Ma, B.Li, Y.Wei, L. Zhang, J. He, X.Zhang, X.Lin, and M. Chan, "FinFET reliability study by forward gated-diode generation- recombination current", semicond.Sci.Technol, Vol. 23, 2008, pp.1-8.
[13] N.Toufik, , F.Pélanchon, and P.Mialhe, , "Degradation of junction parameters of an electrically stressed npn bipolar transistor", Active and Passive Elec. Comp, Vol. 24, 2001, pp. 155-163.
[14] C.Salamé, R.Habchi, W.Tazibt, A.Khoury, and P.Mialhe, "A faster power MOSFET device with electrical stress treatment", Microelectron.Int, Vol. 22, 2005, pp. 35-41.
[15] S.L. Kosier, A.Wei, R.D. Schrimpf, D.M.Fleetwood, M.D.Delaus, R.L. Pease, and W.E.Combs, "Physically based comparison of hot-carrier induced and ionising radiation induced degradation in BJT-s", IEEE Trans.Electron. Dev, Vol. 42, 1995, pp. 436-444.
[16] S.Gerardina, A. Griffonia, A., Cestera, A.Paccagnellaa, and G. Ghidinib, "Degradation of static and dynamic behaviour of CMOS inverters during constant and pulsed voltage stress" Microelectron. Reliab, Vol. 46, 2006, pp. 1669-1672.
[17] L.J.Tang, K.L. Pey, C.H.Tung, R.Ranjanand W.H.Lin, "Study of breakdown in ultrathin gate dielectrics using constant voltage stress and successive constant voltage stress", Microelectron. Eng, Vol. 80, 2005, pp. 170-173.
[18] S.Doyle, B.D.Krakauer, R.Mistry, "Examination of oxide damage during high current stress of n-MOS transistors", IEEE Trans. Electron. Dev, Vol. 40, 1993, pp. 980-985.
[19] Gao, G., Wang, J., Yap, A. and Li, H., (2009), "Two-stage hot-carrier degradation behavior of 0.18 ╬╝m 18 V n-type DEMOS and its recovery effect", Microelectron. Reliab, Vol. 49, pp. 8-12.
[20] S.Y.Park, C.Floresca, U.Chowdhury, J.L. Jimenez, C.Lee, E. Beam, P.Saunier, , T.Balestreri, and M.J.Kim, "Physical degradation of GaN HEMT devices under high drain bias reliability testing", Microelectron. Reliab, Vol. 49, 2009, pp. 478-483.
[21] Y.Wen, C.and Basaran, "An analytical model for thermal stress analysis of multi-layered microelectronics packaging"; Mech. Mater, Vol. 36, 2004, pp.369-385.
[22] A.Tarakji, X.Hu, A.Koudymov, G.Simin, J.Yang, M.A.Khan, M.S.Shur, and R.Gaska, , "DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress", Solid-State Electronics, Vol. 46, 2002, pp. 1211-1214.
[23] Z.Benamara, B.Akkal, A.Talbi, and B.Gruzza, "Electrical transport characteristics of Au/n-GaN Schottky diodes", Mater Sci. Eng C, Vol. 26, 2006, pp. 519-522.
[24] T.Grasser, B. Kaczer, , W.Goes, T.Aichinger, P.Hehenberger, and M.Nelhiebel, "Understanding negative bias temperature instability in the context of hole trapping", Microelectron.Eng, Vol. 86, 2009, pp. 1876- 1882.
[25] L.G. Crespo, D.P.Giesy, and S.P. Kenny, "Reliability-based analysis and design via failure domain bounding", Structural Safety, Vol. 31, 2009, pp. 306-315.
[26] J.R. Gonzalez, M.Vazquez, N.Nunez, C.Algora, I.Rey-Stolle, and B.Galliana, "Reliability analysis of temperature step-stress tests on III-V high concentrator solar cells", Microelectron. Reliab, Vol. 49, 2009, pp. 673-680.
[27] D.Cheng, D. Zhu, R.P. Broadwater and S.Lee, "A graph trace based reliability analysis of electric power systems with time-varying loads and dependent failures", Electr.power Syst.Res, Vol. 79, 2009, pp. 1321- 1328.
[28] A.Naess, B.J. Leira, and O. Batsevych, "System reliability analysis by enhanced Monte Carlo simulation", Structural Safety, Vol. 31,2009, pp. 349-355.
[29] W.J.Plumbridge, "New avenues for failure analysis", Engineering Failure Analyses, Vol. 16, 2009, pp. 1347-1354.
[30] D.M.Fleetwood, "Hydrogen-related reliability issues for advanced microelectronics", Microelectron.Reliab, ", Vol. 42, 2002, pp. 1397- 1403.
[31] S.T.Pantelides, L.Tsetseris, S.N. Rashkeev, X.J.Zhou, D.M. Fleetwood, and R.D.Schrimpf, "Hydrogen in MOSFETs - A primary agent of reliability issues", Microelectron.Reliab, Vol. 47, 2007, pp. 903-911.
[32] L.Vendrame, P.Pavan, G.Corva, A.Nardi, A.Neviani, and E.Zanoni, , "Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications", ,Microelectron.Reliab, Vol. 40, 2000, pp. 207-230.
[33] M.Borgarino, R.Menozzi, D.Dieci, L.Cattani, and F.Fantini, "Reliability physics of compound semiconductor transistors for microwave applications", Microelectron.Reliab, Vol. 41, 2001, pp. 21-30.
[34] J.P.Charles, I.Mekkaoui-Alaoui, G.Bordure, and P.Mialhe, "A critical study of the effectiveness of the single and double exponential models", Solid-State Electronics, Vol. 28, 1985, pp. 807- 820.
[35] P.A .Basore, "Numerical modeling of textured silicon solar cells using PC-1D", IEEE Transactions On Electron Devices, Vol. 37, 1990, pp. 337-343.
[36] M.El-Tahchi, A.Khoury, M.De La Bardonnie, , P.Mialhe, and F.Pelanchon, "Degradation of the diode ideality factor of silicon n-p junctions", Solar Energy Material and Solar Cells, Vol. 62, 2000, pp. 1957-1979.
[37] N.Toufik, F.Pélanchon, and P.Mialhe, "Degradation of junction parameters of an electrically stressed npn bipolar transistor", Active and Passive Elec.Comp, Vol. 24, 2001, pp. 155-163.
[38] M.El-Tahchi, N.Toufik, F.Pelonchon, M.Ajaka, A.Khoury, and P.Mialhe, "New modelling method for forward junction I-V analysis", J.Phys D: Appl. Phys, Vol. 35, 2002, pp. 487-491.
[39] S.M. Sze, Physics of Semiconductor Devices, John & Sons, New York, NY, 1981.
[40] X.Zhixiong, Z. Jiang, W.Tongli, L.Yao, and W.Mingwang, "Analysis of the high injection effects in silicon bipolar transistors at low temperatures", Solid-State Electronics, Vol. 38, 1995 pp. 1455-1460.
[41] A.Gendron, P.Renaud, M.Bafleur, and N.Nolhier, "Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events", Solid-State Electronics, Vol. 52, 2008, pp. 663-674.
[42] L.D. Edmonds, "High-level injection in n+-p junction silicon devices", J.App.Phys, Vol. 97, 2005, pp. 1-7.