Search results for: semiconductor laser.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 436

Search results for: semiconductor laser.

346 Submicron Laser-Induced Dot, Ripple and Wrinkle Structures and Their Applications

Authors: P. Slepicka, N. Slepickova Kasalkova, I. Michaljanicova, O. Nedela, Z. Kolska, V. Svorcik

Abstract:

Polymers exposed to laser or plasma treatment or modified with different wet methods which enable the introduction of nanoparticles or biologically active species, such as amino-acids, may find many applications both as biocompatible or anti-bacterial materials or on the contrary, can be applied for a decrease in the number of cells on the treated surface which opens application in single cell units. For the experiments, two types of materials were chosen, a representative of non-biodegradable polymers, polyethersulphone (PES) and polyhydroxybutyrate (PHB) as biodegradable material. Exposure of solid substrate to laser well below the ablation threshold can lead to formation of various surface structures. The ripples have a period roughly comparable to the wavelength of the incident laser radiation, and their dimensions depend on many factors, such as chemical composition of the polymer substrate, laser wavelength and the angle of incidence. On the contrary, biopolymers may significantly change their surface roughness and thus influence cell compatibility. The focus was on the surface treatment of PES and PHB by pulse excimer KrF laser with wavelength of 248 nm. The changes of physicochemical properties, surface morphology, surface chemistry and ablation of exposed polymers were studied both for PES and PHB. Several analytical methods involving atomic force microscopy, gravimetry, scanning electron microscopy and others were used for the analysis of the treated surface. It was found that the combination of certain input parameters leads not only to the formation of optimal narrow pattern, but to the combination of a ripple and a wrinkle-like structure, which could be an optimal candidate for cell attachment. The interaction of different types of cells and their interactions with the laser exposed surface were studied. It was found that laser treatment contributes as a major factor for wettability/contact angle change. The combination of optimal laser energy and pulse number was used for the construction of a surface with an anti-cellular response. Due to the simple laser treatment, we were able to prepare a biopolymer surface with higher roughness and thus significantly influence the area of growth of different types of cells (U-2 OS cells).

Keywords: Polymer treatment, laser, periodic pattern, cell response.

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345 Semiconductor Supported Gold Nanoparticles for Photodegradation of Rhodamine B

Authors: Ahmad Alshammari, Abdulaziz Bagabas

Abstract:

Rhodamine B (RB) is a toxic dye used extensively in textile industry, which must be remediated before its drainage to environment. In the present study, supported gold nanoparticles on commercially available titania and zincite were successfully prepared and then their activity on the photodegradation of RB under UV A light irradiation were evaluated. The synthesized photocatalysts were characterized by ICP, BET, XRD, and TEM. Kinetic results showed that Au/TiO2 was an inferior photocatalyst to Au/ZnO. This observation could be attributed to the strong reflection of UV irradiation by gold nanoparticles over TiO2 support.

Keywords: Supported AuNPs, Semiconductor photocatalyst, Photodegradation, Rhodamine B.

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344 Efficiency Enhancement of PWM Controlled Water Electrolysis Cells

Authors: S.K. Mazloomi, Nasri b. Sulaiman

Abstract:

By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.

Keywords: Power switch, PWM, Semiconductor switch, Waterelectrolysis

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343 Nonlinear Simulation of Harmonically Coupled Two-Beam Free-Electron Laser

Authors: M. Zahedian, B. Maraghechi, M. H. Rouhani

Abstract:

A nonlinear model of two-beam free-electron laser (FEL) in the absence of slippage is presented. The two beams are assumed to be cold with different energies and the fundamental resonance of the higher energy beam is at the third harmonic of lower energy beam. By using Maxwell-s equations and full Lorentz force equations of motion for the electron beams, coupled differential equations are derived and solved numerically by the fourth order Runge–Kutta method. In this method a considerable growth of third harmonic electromagnetic field in the XUV and X-ray regions is predicted.

Keywords: Free-electron laser, Higher energy beam, Lowerenergy beam, Two-beam

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342 Application of Femtosecond Laser pulses for Nanometer Accuracy Profiling of Quartz and Diamond Substrates and for Multi-Layered Targets and Thin-Film Conductors Processing

Authors: Dmitry S. Sitnikov, Andrey V. Ovchinnikov

Abstract:

Research results and optimal parameters investigation of laser cut and profiling of diamond and quartz substrates by femtosecond laser pulses are presented. Profiles 10 μm in width, ~25 μm in depth and several millimeters long were made. Investigation of boundaries quality has been carried out with the use of AFM «Vecco». Possibility of technological formation of profiles and micro-holes in diamond and quartz substrates with nanometer-scale boundaries is shown. Experimental results of multilayer dielectric cover treatment are also presented. Possibility of precise upper layer (thickness of 70–140 nm) removal is demonstrated. Processes of thin metal film (60 nm and 350 nm thick) treatment are considered. Isolation tracks (conductance ~ 10-11 S) 1.6–2.5 μm in width in conductive metal layers are formed.

Keywords: Femtosecond laser ablation, microhole and nanoprofileformation, micromachining

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341 Effect of Cladding Direction on Residual Stress Distribution in Laser Cladded Rails

Authors: Taposh Roy, Anna Paradowska, Ralph Abrahams, Quan Lai, Michael Law, Peter Mutton, Mehdi Soodi, Wenyi Yan

Abstract:

In this investigation, a laser cladding process with a powder feeding was used to deposit stainless steel 410L (high strength, excellent resistance to abrasion and corrosion, and great laser compatibility) onto railhead (higher strength, heat treated hypereutectoid rail grade manufactured in accordance with the requirements of European standard EN 13674 Part 1 for R400HT grade), to investigate the development and controllability of process-induced residual stress in the cladding, heat-affected zone (HAZ) and substrate and to analyse their correlation with hardness profile during two different laser cladding directions (across and along the track). Residual stresses were analysed by neutron diffraction at OPAL reactor, ANSTO. Neutron diffraction was carried out on the samples in longitudinal (parallel to the rail), transverse (perpendicular to the rail) and normal (through thickness) directions with high spatial resolution through the thickness. Due to the thick rail and thin cladding, 4 mm thick reference samples were prepared from every specimen by Electric Discharge Machining (EDM). Metallography across the laser claded sample revealed four distinct zones: The clad zone, the dilution zone, HAZ and the substrate. Compressive residual stresses were found in the clad zone and tensile residual stress in the dilution zone and HAZ. Laser cladding in longitudinally cladding induced higher tensile stress in the HAZ, whereas transversely cladding rail showed lower tensile behavior.

Keywords: Laser cladding, residual stress, neutron diffraction, HAZ.

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340 Modeling Reflection and Transmission of Elastodiffussive Wave Sata Semiconductor Interface

Authors: A. A. Sharma, B. J. N. Sharma

Abstract:

This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor half-space and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers’ diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.

Keywords: Quasilongitudinal, reflection and transmission, semiconductors, acoustics.

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339 Optical Heterodyning of Injection-Locked Laser Sources — A Novel Technique for Millimeter-Wave Signal Generation

Authors: Subal Kar, Madhuja Ghosh, Soumik Das, Antara Saha

Abstract:

A novel technique has been developed to generate ultra-stable millimeter-wave signal by optical heterodyning of the output from two slave laser (SL) sources injection-locked to the sidebands of a frequency modulated (FM) master laser (ML). Precise thermal tuning of the SL sources is required to lock the particular slave laser frequency to the desired FM sidebands of the ML. The output signals from the injection-locked SL when coherently heterodyned in a fast response photo detector like high electron mobility transistor (HEMT), extremely stable millimeter-wave signal having very narrow line width can be generated. The scheme may also be used to generate ultra-stable sub-millimeter-wave/terahertz signal.

Keywords: FM sideband injection locking, Master-Slave injection locking, Millimetre-wave signal generation and Optical heterodyning.

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338 Depletion Layer Parameters of Al-MoO3-P-CdTe-Al MOS Structures

Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: Debye length, Depletion width, flat band capacitance, impurity concentration.

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337 Cooling-Rate Induced Fiber Birefringence Variation in Regenerated High Birefringent Fiber

Authors: M. H. Lai, D. S. Gunawardena, K. S. Lim, H. Ahmad

Abstract:

In this paper, we have reported birefringence manipulation in regenerated high birefringent fiber Bragg grating (RPMG) by using CO2 laser annealing method. The results indicate that the birefringence of RPMG remains unchanged after CO2 laser annealing followed by slow cooling process, but reduced after fast cooling process (~5.6×10-5). After a series of annealing procedures with different cooling rates, the obtained results show that slower the cooling rate, higher the birefringence of RPMG. The volume, thermal expansion coefficient (TEC) and glass transition temperature (Tg) change of stress applying part in RPMG during cooling process are responsible for the birefringence change. Therefore, these findings are important to the RPMG sensor in high and dynamic temperature environment. The measuring accuracy, range and sensitivity of RPMG sensor is greatly affected by its birefringence value. This work also opens up a new application of CO2 laser for fiber annealing and birefringence modification.

Keywords: Birefringence, CO2 laser annealing, regenerated gratings, thermal stress.

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336 Laser Beam Micro-Drilling Effect on Ti-6Al-4V Titanium Alloy Sheet Properties

Authors: Petr Homola, Roman Růžek

Abstract:

Laser beam micro-drilling (LBMD) is one of the most important non-contact machining processes of materials that are difficult to machine by means oeqf conventional machining methods used in various industries. The paper is focused on LBMD knock-down effect on Ti-6Al-4V (Grade 5) titanium alloy sheets properties. Two various process configurations were verified with a focus on laser damages in back-structure parts affected by the process. The effects of the LBMD on the material properties were assessed by means of tensile and fatigue tests and fracture surface analyses. Fatigue limit of LBMD configurations reached a significantly lower value between 15% and 30% of the static strength as compared to the reference raw material with 58% value. The farther back-structure configuration gives a two-fold fatigue life as compared to the closer LBMD configuration at a given stress applied.

Keywords: Fatigue, fracture surface, laser beam micro-drilling, titanium alloy.

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335 The Analysis of Photoconductive Semiconductor Switch Operation in the Frequency of 10 GHz

Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour

Abstract:

A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.

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334 High Energy Dual-Wavelength Mid-Infrared Extracavity KTA Optical Parametric Oscillator

Authors: Hongjun Liu, Qibing Sun, Nan Huang, Shaolan Zhu, Wei Zhao

Abstract:

A high energy dual-wavelength extracavity KTA optical parametric oscillator (OPO) with excellent stability and beam quality, which is pumped by a Q-switched single-longitudinal-mode Nd:YAG laser, has been demonstrated based on a type II noncritical phase matching (NCPM) KTA crystal. The maximum pulse energy of 10.2 mJ with the output stability of better than 4.1% rms at 3.467 μm is obtained at the repetition rate of 10 Hz and pulse width of 2 ns, and the 11.9 mJ of 1.535 μm radiation is obtained simultaneously. This extracavity NCPM KTA OPO is very useful when high energy, high beam quality and smooth time domain are needed.

Keywords: mid-infrared laser, OPO, dual-wavelength laser

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333 A Review on Process Parameters of Ti/Al Dissimilar Joint Using Laser Beam Welding

Authors: K. Kalaiselvan, K. Sekar, S. Elavarasi

Abstract:

The use of laser beam welding for joining titanium and aluminum offers more advantages compared with conventional joining processes. Dissimilar metal combination is very much needed for aircraft structural industries and research activities. The quality of a weld joint is directly influenced by the welding input parameters. The common problem that is faced by the manufactures is the control of the process parameters to obtain a good weld joint with minimal detrimental. To overcome this issue, various parameters can be preferred to obtain quality of weld joint. In this present study an overall literature review on processing parameters such as offset distance, welding speed, laser power, shielding gas and filler metals are discussed with the effects on quality weldment. Additionally, mechanical properties of welds joint are discussed. The aim of the report is to review the recent progress in the welding of dissimilar titanium (Ti) and aluminum (Al) alloys to provide a basis for follow up research.

Keywords: Laser beam welding, titanium, aluminum, process parameters.

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332 0.13-µm Complementary Metal-Oxide Semiconductor Vector Modulator for Beamforming System

Authors: J. S. Kim

Abstract:

This paper presents a 0.13-µm Complementary Metal-Oxide Semiconductor (CMOS) vector modulator for beamforming system. The vector modulator features a 360° phase and gain range of -10 dB to 10 dB with a root mean square phase and amplitude error of only 2.2° and 0.45 dB, respectively. These features make it a suitable for wireless backhaul system in the 5 GHz industrial, scientific, and medical (ISM) bands. It draws a current of 20.4 mA from a 1.2 V supply. The total chip size is 1.87x1.34 mm².

Keywords: CMOS, vector modulator, beamforming, wireless backhaul, ISM.

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331 Application of Molecular Materials in the Manufacture of Flexible and Organic Devices for Photovoltaic Applications

Authors: M. Gómez-Gómez, M. E. Sánchez-Vergara

Abstract:

Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.

Keywords: Electrical properties, optical gap, phthalocyanine, thin film.

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330 Optimization of Laser-Induced Breakdown Spectroscopy (LIBS) for Determination of Quantum Dots (Qds) in Liquid Solutions

Authors: David Prochazka, Ľudmila Ballová, Karel Novotný, Jan Novotný, Radomír Malina, Petr Babula, Vojtěch Adam, René Kizek, Klára Procházková, Jozef Kaiser

Abstract:

Here we report on the utilization of Laser-Induced Breakdown Spectroscopy (LIBS) for determination of Quantum Dots (QDs) in liquid solution. The process of optimization of experimental conditions from choosing the carrier medium to application of colloid QDs is described. The main goal was to get the best possible signal to noise ratio. The results obtained from the measurements confirmed the capability of LIBS technique for qualitative and afterwards quantitative determination of QDs in liquid solution.

Keywords: Laser-Induced Breakdown Spectroscopy, liquid analysis, nanocrystals, nanotechnology, Quantum dots.

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329 Flexible Laser Reduced Graphene Oxide/ MnO2 Electrode for Supercapacitor Applications

Authors: Ingy N. Bkrey, Ahmed A. Moniem

Abstract:

We succeeded to produce a high performance and flexible graphene/Manganese dioxide (G/MnO2) electrode coated on flexible polyethylene terephthalate (PET) substrate. The graphene film is initially synthesized by drop-casting the graphene oxide (GO) solution on the PET substrate, followed by simultaneous reduction and patterning of the dried film using carbon dioxide (CO2) laser beam with power of 1.8 W. Potentiostatic Anodic Deposition method was used to deposit thin film of MnO2 with different loading mass 10 – 50 and 100 μg.cm-2 on the pre-prepared graphene film. The electrodes were fully characterized in terms of structure, morphology, and electrochemical performance. A maximum specific capacitance of 973 F.g-1 was attributed when depositing 50μg.cm-2 MnO2 on the laser reduced graphene oxide rGO (or G/50MnO2) and over 92% of its initial capacitance was retained after 1000 cycles. The good electrochemical performance and long-term cycling stability make our proposed approach a promising candidate in the supercapacitor applications.

Keywords: Electrode Deposition, Flexible, Graphene oxide, Graphene, High Power CO2 Laser, MnO2.

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328 3D Point Cloud Model Color Adjustment by Combining Terrestrial Laser Scanner and Close Range Photogrammetry Datasets

Authors: M. Pepe, S. Ackermann, L. Fregonese, C. Achille

Abstract:

3D models obtained with advanced survey techniques such as close-range photogrammetry and laser scanner are nowadays particularly appreciated in Cultural Heritage and Archaeology fields. In order to produce high quality models representing archaeological evidences and anthropological artifacts, the appearance of the model (i.e. color) beyond the geometric accuracy, is not a negligible aspect. The integration of the close-range photogrammetry survey techniques with the laser scanner is still a topic of study and research. By combining point cloud data sets of the same object generated with both technologies, or with the same technology but registered in different moment and/or natural light condition, could construct a final point cloud with accentuated color dissimilarities. In this paper, a methodology to uniform the different data sets, to improve the chromatic quality and to highlight further details by balancing the point color will be presented.

Keywords: Color models, cultural heritage, laser scanner, photogrammetry, point cloud color.

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327 Laser Surface Hardening Considering Coupled Thermoelasticity using an Eulerian Formulations

Authors: Me. Sistaninia, G.H.Farrahi, Ma. Sistaninia

Abstract:

Thermoelastic temperature, displacement, and stress in heat transfer during laser surface hardening are solved in Eulerian formulation. In Eulerian formulations the heat flux is fixed in space and the workpiece is moved through a control volume. In the case of uniform velocity and uniform heat flux distribution, the Eulerian formulations leads to a steady-state problem, while the Lagrangian formulations remains transient. In Eulerian formulations the reduction to a steady-state problem increases the computational efficiency. In this study also an analytical solution is developed for an uncoupled transient heat conduction equation in which a plane slab is heated by a laser beam. The thermal result of the numerical model is compared with the result of this analytical model. Comparing the results shows numerical solution for uncoupled equations are in good agreement with the analytical solution.

Keywords: Coupled thermoelasticity, Finite element, Laser surface hardening, Eulerian formulation.

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326 Laser-Ultrasonic Method for Measuring the Local Elastic Moduli of Porous Isotropic Composite Materials

Authors: Alexander A. Karabutov, Natalia B. Podymova, Elena B. Cherepetskaya, Vladimir A. Makarov, Yulia G. Sokolovskaya

Abstract:

The laser-ultrasonic method is realized for quantifying the influence of porosity on the local Young’s modulus of isotropic composite materials. The method is based on a laser thermooptical method of ultrasound generation combined with measurement of the phase velocity of longitudinal and shear acoustic waves in samples. The main advantage of this method compared with traditional ultrasonic research methods is the efficient generation of short and powerful probing acoustic pulses required for reliable testing of ultrasound absorbing and scattering heterogeneous materials. Using as an example samples of a metal matrix composite with reinforcing microparticles of silicon carbide in various concentrations, it is shown that to provide an effective increase in Young’s modulus with increasing concentration of microparticles, the porosity of the final sample should not exceed 2%.

Keywords: Laser ultrasonic, longitudinal and shear ultrasonic waves, porosity, composite, local elastic moduli.

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325 Relative Navigation with Laser-Based Intermittent Measurement for Formation Flying Satellites

Authors: Jongwoo Lee, Dae-Eun Kang, Sang-Young Park

Abstract:

This study presents a precise relative navigational method for satellites flying in formation using laser-based intermittent measurement data. The measurement data for the relative navigation between two satellites consist of a relative distance measured by a laser instrument and relative attitude angles measured by attitude determination. The relative navigation solutions are estimated by both the Extended Kalman filter (EKF) and unscented Kalman filter (UKF). The solutions estimated by the EKF may become inaccurate or even diverge as measurement outage time gets longer because the EKF utilizes a linearization approach. However, this study shows that the UKF with the appropriate scaling parameters provides a stable and accurate relative navigation solutions despite the long measurement outage time and large initial error as compared to the relative navigation solutions of the EKF. Various navigation results have been analyzed by adjusting the scaling parameters of the UKF.

Keywords: Satellite relative navigation, laser-based measurement, intermittent measurement, unscented kalman filter.

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324 Development of Manufacturing Simulation Model for Semiconductor Fabrication

Authors: Syahril Ridzuan Ab Rahim, Ibrahim Ahmad, Mohd Azizi Chik, Ahmad Zafir Md. Rejab, and U. Hashim

Abstract:

This research presents the development of simulation modeling for WIP management in semiconductor fabrication. Manufacturing simulation modeling is needed for productivity optimization analysis due to the complex process flows involved more than 35 percent re-entrance processing steps more than 15 times at same equipment. Furthermore, semiconductor fabrication required to produce high product mixed with total processing steps varies from 300 to 800 steps and cycle time between 30 to 70 days. Besides the complexity, expansive wafer cost that potentially impact the company profits margin once miss due date is another motivation to explore options to experiment any analysis using simulation modeling. In this paper, the simulation model is developed using existing commercial software platform AutoSched AP, with customized integration with Manufacturing Execution Systems (MES) and Advanced Productivity Family (APF) for data collections used to configure the model parameters and data source. Model parameters such as processing steps cycle time, equipment performance, handling time, efficiency of operator are collected through this customization. Once the parameters are validated, few customizations are made to ensure the prior model is executed. The accuracy for the simulation model is validated with the actual output per day for all equipments. The comparison analysis from result of the simulation model compared to actual for achieved 95 percent accuracy for 30 days. This model later was used to perform various what if analysis to understand impacts on cycle time and overall output. By using this simulation model, complex manufacturing environment like semiconductor fabrication (fab) now have alternative source of validation for any new requirements impact analysis.

Keywords: Advanced Productivity Family (APF), Complementary Metal Oxide Semiconductor (CMOS), Manufacturing Execution Systems (MES), Work In Progress (WIP).

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323 The Experience with SiC MOSFET and Buck Converter Snubber Design

Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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322 A Novel Method for Blood Glucose Measurement by Noninvasive Technique Using Laser

Authors: V.Ashok, A.Nirmalkumar, N.Jeyashanthi

Abstract:

A method and apparatus for noninvasive measurement of blood glucose concentration based on transilluminated laser beam via the Index Finger has been reported in this paper. This method depends on atomic gas (He-Ne) laser operating at 632.8nm wavelength. During measurement, the index finger is inserted into the glucose sensing unit, the transilluminated optical signal is converted into an electrical signal, compared with the reference electrical signal, and the obtained difference signal is processed by signal processing unit which presents the results in the form of blood glucose concentration. This method would enable the monitoring blood glucose level of the diabetic patient continuously, safely and noninvasively.

Keywords: Anisotropy factor, Blood glucose, Diabetes Mellitus, Noninvasive method, Photo detectors.

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321 A Comparative Study of a Defective Superconductor/ Semiconductor-Dielectric Photonic Crystal

Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa2Ca2Cu3O10 as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF2 as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF2)NInSb(Si/MgF2)N named S.I, and (Si/MgF2)NHgBa2Ca2Cu3O10(Si/MgF2)N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.

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320 Non-Contact Digital Music Instrument Using Light Sensing Technology

Authors: Aishwarya Ravichandra, Kirtana Kirtivasan, Adithi Mahesh, Ashwini S.Savanth

Abstract:

A Non-Contact Digital Music System has been conceptualized and implemented to create a new era of digital music. This system replaces the strings of a traditional stringed instrument with laser beams to avoid bruising of the user’s hand. The system consists of seven laser modules, detector modules and distance sensors that form the basic hardware blocks of this instrument. Arduino ATmega2560 microcontroller is used as the primary interface between the hardware and the software. MIDI (Musical Instrument Digital Interface) is used as the protocol to establish communication between the instrument and the virtual synthesizer software.

Keywords: Arduino, Detector, Laser, MIDI, NOTE ON, NOTE OFF, PITCH BEND, Sharp IR distance sensor.

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319 Stealth Laser Dicing Process Improvement via Shuffled Frog Leaping Algorithm

Authors: Pongchanun Luangpaiboon, Wanwisa Sarasang

Abstract:

In this paper, performances of shuffled frog leaping algorithm was investigated on the stealth laser dicing process. Effect of problem on the performance of the algorithm was based on the tolerance of meandering data. From the customer specification it could be less than five microns with the target of zero microns. Currently, the meandering levels are unsatisfactory when compared to the customer specification. Firstly, the two-level factorial design was applied to preliminarily study the statistically significant effects of five process variables. In this study one influential process variable is integer. From the experimental results, the new operating condition from the algorithm was superior when compared to the current manufacturing condition.

Keywords: Stealth Laser Dicing Process, Meandering, Metaheuristics, Shuffled Frog Leaping Algorithm.

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318 Underwater Interaction of 1064 nm Laser Radiation with Metal Target

Authors: G. Toker, V. Bulatov, T. Kovalchuk, I. Schechter

Abstract:

Dynamics of laser radiation – metal target interaction in water at 1064 nm by applying Mach-Zehnder interference technique was studied. The mechanism of generating the well developed regime of evaporation of a metal surface and a spherical shock wave in water is proposed. Critical intensities of the NIR for the well developed evaporation of silver and gold targets were determined. Dynamics of shock waves was investigated for earlier (dozens) and later (hundreds) nanoseconds of time. Transparent expanding plasma-vapor-compressed water object was visualized and measured. The thickness of compressed layer of water and pressures behind the front of a shock wave for later time delays were obtained from the optical treatment of interferograms.

Keywords: laser, shock wave, metal target, underwater

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317 Analysis of Nonlinear Pulse Propagation Characteristics in Semiconductor Optical Amplifier for Different Input Pulse Shapes

Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

Abstract:

This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: Finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier.

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