Application of Femtosecond Laser pulses for Nanometer Accuracy Profiling of Quartz and Diamond Substrates and for Multi-Layered Targets and Thin-Film Conductors Processing

Authors: Dmitry S. Sitnikov, Andrey V. Ovchinnikov

Abstract:

Research results and optimal parameters investigation of laser cut and profiling of diamond and quartz substrates by femtosecond laser pulses are presented. Profiles 10 μm in width, ~25 μm in depth and several millimeters long were made. Investigation of boundaries quality has been carried out with the use of AFM «Vecco». Possibility of technological formation of profiles and micro-holes in diamond and quartz substrates with nanometer-scale boundaries is shown. Experimental results of multilayer dielectric cover treatment are also presented. Possibility of precise upper layer (thickness of 70–140 nm) removal is demonstrated. Processes of thin metal film (60 nm and 350 nm thick) treatment are considered. Isolation tracks (conductance ~ 10-11 S) 1.6–2.5 μm in width in conductive metal layers are formed.

Keywords: Femtosecond laser ablation, microhole and nanoprofileformation, micromachining

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1332540

References:

[1] S. Jayaraman and C. H. Lee , "Observation of two-photon conductivity in GaAs with nanosecond and picosecond light pulses", Appl. Phys. Lett., 1972, V.20, pp. 392-395.
[2] Henry M. van Driel, "Kinetics of high-density plasmas generated in Si by 1.06- and 0.53-╬╝m picosecond laser pulses", Phys. Rev. B, 1987-II, V. 35, pp. 8166-8176.
[3] Gibbon P., Forster R., "Short-pulse laser-plasma interactions", Plasma Phys. Controlled Fusion, 1996, V.38, pp. 769-792
[4] E. G. Gamalii, V. T. Tikhonchuk, "Effect of intense ultrashort light pulses on a substance", JETP Lett., V. 48, pp.453-455.
[5] C. V. Shank, R. Yen, C. Hirlimann, "Time-resolved reflectivity measurements of femtosecond-optical-pulse-induced phase transition in silicon", Phys. Rev. Lett., 1983, V. 50, pp. 454-457.
[6] P. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, and E. Mazur, "Ultrafast electronic disordering during femtosecond laser melting of GaAs", Phys. Rev. Lett., 1991, V.67, pp. 1023-1026.
[7] S. I. Ashitkov, A. V. Ovchinnikov and M. B. Agranat, "Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses" JETP Lett., V. 79, pp.529-531.
[8] Sokolowski-Tinten K., Bialkowski J., Boring M., Cavalleri A., D. von der Linde, "Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation", Phys. Rev. B, 1998, V. 58, pp. 11805- 11808.
[9] M. B. Agranat, S. I. Anisimov, S. I. Ashitkov, A. V. Ovchinnikov, P. S. Kondratenko, D. S. Sitnikov and V. E. Fortov, "On the mechanism of the absorption of femtosecond laser pulses in the melting and ablation of Si and GaAs" JETP Lett., 2006, V. 83, pp. 501-504.
[10] A. Zoubir, M. Richardson, L. Canioni, A. Brocas and L. Sarger, "Optical properties of infrared femtosecond laser-modified fused silica and application to waveguide fabrication", J. Opt. Soc. Am. B., 2005, V. 22, pp. 2138-2143.
[11] M. Meunier, B. Fisette, A. Houle, A. V. Kabashin, S. V. Broude, P. Miller, "Processing of metals and semiconductors by a femtosecond laser-based microfabrication system", SPIE Proc., 2003, V. 4978, p. 169.
[12] Y. Bellouard, A. Said , M. Dugan, and P. Bado, "Fabrication of highaspect ratio, micro-fluidic channels and tunnels using femtosecond laser pulses and chemical etching", Optics express, 2004, V.12, pp. 2120- 2128.
[13] S. Nikumb, Q. Chen, C. Li, H. Reshef, H. Y. Zheng, H. Qiu, D. Low, "Precision glass machining, drilling and profile cutting by short pulse lasers", Thin Solid Films, 2005, V.47, pp. 216-221.