Search results for: Technological Device.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1193

Search results for: Technological Device.

1163 Production Plan and Technological Variants Optimization by Goal Programming Methods

Authors: Tunjo Perić, Franjo Bratić

Abstract:

In this paper, the goal programming methodology for solving multiple objective problem of the technological variants and production plan optimization has been applied. The optimization criteria are determined and the multiple objective linear programming model for solving a problem of the technological variants and production plan optimization is formed and solved. Then the obtained results are analysed. The obtained results point out to the possibility of efficient application of the goal programming methodology in solving the problem of the technological variants and production plan optimization. The paper points out on the advantages of the application of the goal programming methodology compare to the Surrogat Worth Trade-off method in solving this problem.

Keywords: Goal programming, multi objective programming, production plan, SWT method, technological variants.

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1162 Low Frequency Noise Behavior of Independent Gate Junctionless FinFET

Authors: A. Kamath, Z. X. Chen, C. J. Gu, F. Zheng, X. P. Wang, N. Singh, G-Q. Lo

Abstract:

In this paper we use low frequency noise analysis to understand and map the current conduction path in a multi gate junctionless FinFET.  The device used in this study behaves as a gated resistor and shows excellent short channel effect suppression due to its multi gate structure. Generally for a bulk conduction device like the junctionless device studied in this work, the low frequency noise can be modelled using the mobility fluctuation model; however for this device we can also see the effect of carrier fluctuations on the LFN characteristic. The noise characteristic at different gate bias and also the possible location of the traps is explained.

Keywords: LFN analysis, junctionless, Current conduction path, FinFET.

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1161 A Systematic Approach for Design a Low-Cost Mobility Assistive Device for Elderly People

Authors: Omar Salah, Ahmed A. Ramadan, Salvatore Sessa, Ahmed A. Abo-Ismail

Abstract:

Walking and sit to stand are activities carried out by all the people many times during the day, but physical disabilities due to age and diseases create needs of assistive devices to help elderly people during their daily life. This study aims to study the different types and mechanisms of the assistive devices. We will analyze the limitations and the challenges faced by the researchers in this field. We will introduce the Assistive Device developed at the Egypt-Japan University of Science and Technology, named E-JUST Assistive Device (EJAD). EJAD will be a low cost intelligent assistive device to help elders in walking and sit-to-stand activities.

Keywords: Active walker, Assistive robotics, Standing Assistance, Walking Assistance

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1160 A Novel Method for Non-Invasive Diagnosis of Hepatitis C Virus Using Electromagnetic Signal Detection: A Multicenter International Study

Authors: Gamal Shiha, Waleed Samir, Zahid Azam, Premashis Kar, Saeed Hamid, Shiv Sarin

Abstract:

A simple, rapid and non-invasive electromagnetic sensor (C-FAST device) was- patented; for diagnosis of HCV RNA. Aim: To test the validity of the device compared to standard HCV PCR. Subjects and Methods: The first phase was done as pilot in Egypt on 79 participants; the second phase was done in five centers: one center from Egypt, two centers from Pakistan and two centers from India (800, 92 and 113 subjects respectively). The third phase was done nationally as multicenter study on (1600) participants for ensuring its representativeness. Results: When compared to PCR technique, C-FAST device revealed sensitivity 95% to 100%, specificity 95.5% to 100%, PPV 89.5% to 100%, NPV 95% to 100% and positive likelihood ratios 21.8% to 38.5%. Conclusion: It is practical evidence that HCV nucleotides emit electromagnetic signals that can be used for its identification. As compared to PCR, C-FAST is an accurate, valid and non-invasive device.

Keywords: C-FAST- a valid and reliable device, Distant cellular interaction, Electromagnetic signal detection, Non-invasive diagnosis of HCV.

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1159 Cavity-Type Periodically-Poled LiNbO3 Device for Highly-Efficient Third-Harmonic Generation

Authors: Isao Tomita

Abstract:

We develop a periodically-poled LiNbO3 (PPLN) device for highly-efficient third-harmonic generation (THG), where the THG efficiency is enhanced with a cavity. THG can usually be produced via χ(3)-nonlinear materials by optical pumping with very high pump-power. Instead, we here propose THG by moderate-power pumping through a specially-designed PPLN device containing only χ(2)-nonlinearity, where sum-frequency generation in the χ(2) process is employed for the mixing of a pump beam and a second-harmonic-generation (SHG) beam produced from the pump beam. The cavity is designed to increase the SHG power with dichroic mirrors attached to both ends of the device that perfectly reflect the SHG beam back to the device and yet let the pump and THG beams pass through the mirrors. This brings about a THG-power enhancement because of THG power proportional to the enhanced SHG power. We examine the THG-efficiency dependence on the mirror reflectance and show that very high THG-efficiency is obtained at moderate pump-power when compared with that of a cavity-free PPLN device.

Keywords: Cavity, periodically-poled LiNbO3, sum-frequency generation, third-harmonic generation.

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1158 Graded Orientation of the Linear Polymers

Authors: Levan Nadareishvili, Roland Bakuradze, Barbara Kilosanidze, Nona Topuridze, Liana Sharashidze, Ineza Pavlenishvili

Abstract:

Some regularities of formation of a new structural state of the thermoplastic polymers - gradually oriented (stretched) state (GOS) are discussed. Transition into GOS is realized by the graded oriented stretching - by action of inhomogeneous mechanical field on the isotropic linear polymers or by zone stretching that is implemented on a standard tensile-testing machine with using a specially designed zone stretching device (ZSD). Both technical approaches (especially zone stretching method) allows to manage the such quantitative parameters of gradually oriented polymers as a range of change in relative elongation/orientation degree, length of this change and profile (linear, hyperbolic, parabolic, logarithmic, etc.). The possibility of obtaining functionally graded materials (FGMs) by graded orientation method is briefly discussed. Uniaxial graded stretching method should be considered as an effective technological solution to create polymer materials with a predetermined gradient of physical properties.

Keywords: Controlled graded stretching, gradually oriented state, linear polymers, zone stretching device.

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1157 Authenticated Mobile Device Proxy Service

Authors: W. Adi, Khaled E. A. Negm, A. Mabrouk, H. Ghraieb

Abstract:

In the current study we present a system that is capable to deliver proxy based differentiated service. It will help the carrier service node to sell a prepaid service to clients and limit the use to a particular mobile device or devices for a certain time. The system includes software and hardware architecture for a mobile device with moderate computational power, and a secure protocol for communication between it and its carrier service node. On the carrier service node a proxy runs on a centralized server to be capable of implementing cryptographic algorithms, while the mobile device contains a simple embedded processor capable of executing simple algorithms. One prerequisite is needed for the system to run efficiently that is a presence of Global Trusted Verification Authority (GTVA) which is equivalent to certifying authority in IP networks. This system appears to be of great interest for many commercial transactions, business to business electronic and mobile commerce, and military applications.

Keywords: Mobile Device Security, Identity Authentication, Mobile Commerce Security.

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1156 Challenges to Technological Advancement in Economically Weak Countries: An Assessment of the Nigerian Educational Situation

Authors: Iyabosola B. Oronti, Adeoluwawale A. Adewusi, Israel O. Megbowon

Abstract:

Nigeria is considered as one of the many countries in sub-Saharan Africa with a weak economy and gross deficiencies in technology and engineering. Available data from international monitoring and regulatory organizations show that technology is pivotal to determining the economic strengths of nations all over the world. Education is critical to technology acquisition, development, dissemination and adaptation. Thus, this paper seeks to critically assess and discuss issues and challenges facing technological advancement in Nigeria, particularly in the education sector, and also proffers solutions to resuscitate the Nigerian education system towards achieving national technological and economic sustainability such that Nigeria can compete favourably with other technologicallydriven economies of the world in the not-too-distant future.

Keywords: Economically weak countries, education, globalization and competition, technological advancement.

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1155 SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp

Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

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1154 An Algorithm for Preventing the Irregular Operation Modes of the Drive Synchronous Motor Providing the Ore Grinding

Authors: Baghdasaryan Marinka

Abstract:

The current scientific and engineering interest concerning the problems of preventing the emergency manifestations of drive synchronous motors, ensuring the ore grinding technological process has been justified. The analysis of the known works devoted to the abnormal operation modes of synchronous motors and possibilities of protection against them, has shown that their application is inexpedient for preventing the impermissible displays arising in the electrical drive synchronous motors ensuring the ore-grinding process. The main energy and technological factors affecting the technical condition of synchronous motors are evaluated. An algorithm for preventing the irregular operation modes of the electrical drive synchronous motor applied in the ore-grinding technological process has been developed and proposed for further application which gives an opportunity to provide smart solutions, ensuring the safe operation of the drive synchronous motor by a comprehensive consideration of the energy and technological factors.

Keywords: Synchronous motor, abnormal operating mode, electric drive, algorithm, energy factor, technological factor.

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1153 The Development of the Prototype of Bamboo Shading Device

Authors: N. Tuaycharoen, W. Konisranukul

Abstract:

The main aim of this research was to investigate a prototype bamboo shading device. There were two objectives to this study: first, to investigate the effects of non-chemical treatments on bamboo shading devices damaged by powder-post beetles and fungi, and second to develop a prototype bamboo shading device. This study of the effects of non-chemical treatments on bamboo shading devices damage by powder-post beetles in the laboratory showed that, among seven treatments tested, wood vinegar treatment can protect powder-post beetles better than the original method by up to 92.91%. It was also found that wood vinegar treatment shows the best performance in fungi protection and works better than the original method by up to 40%. A second experiment was carried out by constructing four bamboo shading devices and installing them on a building for 28 days. All aspects of shading device were investigated in terms of their beauty, durability, and ease of construction and assembly. The final prototype was developed from the lessons learned from the test results. In conclusion, this study showed the effectiveness of some natural preservatives against insect and fungi damage, and it also illustrated the characteristics of a prototype bamboo shading device that can be constructed by rural workers within one week.

Keywords: Bamboo, shading device, energy conservation, alternative materials.

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1152 Development of Equivalent Inelastic Springs to Model C-Devices

Authors: Oday Al-Mamoori, J. Enrique Martinez-Rueda

Abstract:

'C' shape yielding devices (C-devices) are effective tools for introducing supplemental sources of energy dissipation by hysteresis. Studies have shown that C-devices made of mild steel can be successfully applied as integral parts of seismic retrofitting schemes. However, explicit modelling of these devices can become cumbersome, expensive and time consuming. The device under study in this article has been previously used in non-invasive dissipative bracing for seismic retrofitting. The device is cut from a mild steel plate and has an overall shape that resembles that of a rectangular portal frame with circular interior corner transitions to avoid stress concentration and to control the extension of the dissipative region of the device. A number of inelastic finite element (FE) analyses using either inelastic 2D plane stress elements or inelastic fibre frame elements are reported and used to calibrate a 1D equivalent inelastic spring model that effectively reproduces the cyclic response of the device. The more elaborate FE model accounts for the frictional forces developed between the steel plate and the bolts used to connect the C-device to structural members. FE results also allow the visualization of the inelastic regions of the device where energy dissipation is expected to occur. FE analysis results are in a good agreement with experimental observations.

Keywords: C-device, equivalent nonlinear spring, FE analyses, reversed cyclic tests.

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1151 Design of a Compact Herriott Cell for Heat Flux Measurement Applications

Authors: R. G. Ramírez-Chavarría, C. Sánchez-Pérez, V. Argueta-Díaz

Abstract:

In this paper we present the design of an optical device based on a Herriott multi-pass cell fabricated on a small sized acrylic slab for heat flux measurements using the deflection of a laser beam propagating inside the cell. The beam deflection is produced by the heat flux conducted to the acrylic slab due to a gradient in the refractive index. The use of a long path cell as the sensitive element in this measurement device, gives the possibility of high sensitivity within a small size device. We present the optical design as well as some experimental results in order to validate the device’s operation principle.

Keywords: Heat flux, herriott cell, optical beam deflection, thermal conductivity.

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1150 Obtaining the Analytic Dependence for Estimating the Ore Mill Operation Modes

Authors: Baghdasaryan Marinka

Abstract:

The particular significance of comprehensive estimation of the increase in the operation efficiency of the mill motor electromechanical system, providing the main technological process for obtaining a metallic concentrate, as well as the technical state of the system are substantiated. The works carried out in the sphere of investigating, creating, and improving the operation modes of electric drive motors and ore-grinding mills have been studied. Analytic dependences for estimating the operation modes of the ore-grinding mills aimed at improving the ore-crashing process maintenance and technical service efficiencies have been obtained. The obtained analytic dependencies establish a link between the technological and power parameters of the electromechanical system, and allow to estimate the state of the system and reveal the controlled parameters required for the efficient management in case of changing the technological parameters. It has been substantiated that the changes in the technological factors affecting the consumption power of the drive motor do not cause an instability in the electromechanical system.

Keywords: Electromechanical system, estimation, operation mode, productivity, technological process, the mill filling degree.

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1149 Modeling and Control of a 4DoF Robotic Assistive Device for Hand Rehabilitation

Authors: Christopher Spiewak, M. R. Islam, Mohammad Arifur Rahaman, Mohammad H. Rahman, Roger Smith, Maarouf Saad

Abstract:

For those who have lost the ability to move their hand, going through repetitious motions with the assistance of a therapist is the main method of recovery. We have been developed a robotic assistive device to rehabilitate the hand motions in place of the traditional therapy. The developed assistive device (RAD-HR) is comprised of four degrees of freedom enabling basic movements, hand function, and assists in supporting the hand during rehabilitation. We used a nonlinear computed torque control technique to control the RAD-HR. The accuracy of the controller was evaluated in simulations (MATLAB/Simulink environment). To see the robustness of the controller external disturbance as modelling uncertainty (±10% of joint torques) were added in each joints.

Keywords: Biorobotics, rehabilitation, nonlinear control, robotic assistive device, exoskeleton.

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1148 Studying the Dynamical Response of Nano-Microelectromechanical Devices for Nanomechanical Testing of Nanostructures

Authors: Mohammad Reza Zamani Kouhpanji

Abstract:

Characterizing the fatigue and fracture properties of nanostructures is one of the most challenging tasks in nanoscience and nanotechnology due to lack of a MEMS/NEMS device for generating uniform cyclic loadings at high frequencies. Here, the dynamic response of a recently proposed MEMS/NEMS device under different inputs signals is completely investigated. This MEMS/NEMS device is designed and modeled based on the electromagnetic force induced between paired parallel wires carrying electrical currents, known as Ampere’s Force Law (AFL). Since this MEMS/NEMS device only uses two paired wires for actuation part and sensing part, it represents highly sensitive and linear response for nanostructures with any stiffness and shapes (single or arrays of nanowires, nanotubes, nanosheets or nanowalls). In addition to studying the maximum gains at different resonance frequencies of the MEMS/NEMS device, its dynamical responses are investigated for different inputs and nanostructure properties to demonstrate the capability, usability, and reliability of the device for wide range of nanostructures. This MEMS/NEMS device can be readily integrated into SEM/TEM instruments to provide real time study of the fatigue and fracture properties of nanostructures as well as their softening or hardening behaviors, and initiation and/or propagation of nanocracks in them.

Keywords: Ampere’s force law, dynamical response, fatigue and fracture characterization, paired wire actuators and sensors, MEMS/NEMS devices.

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1147 The Analysis of Photoconductive Semiconductor Switch Operation in the Frequency of 10 GHz

Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour

Abstract:

A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.

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1146 A Simulation Model for the H-gate PDSOI MOSFET

Authors: Bu Jianhui, Bi Jinshun, Liu Mengxin, Luo Jiajun, Han Zhengsheng

Abstract:

The floating body effect is a serious problem for the PDSOI MOSFET, and the H-gate layout is frequently used as the body contact to eliminate this effect. Unfortunately, most of the standard commercial SOI MOSFET model is for the device with finger gate, the necessity of the new models for the H-gate device arises. A simulation model for the H-gate PDSOI MOSFET is proposed based on the 0.35μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and then the model is well verified by the ring-oscillator.

Keywords: PDSOI H-gate Device model Body contact.

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1145 Numerical Analysis of Flow in the Gap between a Simplified Tractor-Trailer Model and Cross Vortex Trap Device

Authors: Terrance Charles, Zhiyin Yang, Yiling Lu

Abstract:

Heavy trucks are aerodynamically inefficient due to their un-streamlined body shapes, leading to more than of 60% engine power being required to overcome the aerodynamics drag at 60 m/hr. There are many aerodynamics drag reduction devices developed and this paper presents a study on a drag reduction device called Cross Vortex Trap Device (CVTD) deployed in the gap between the tractor and the trailer of a simplified tractor-trailer model. Numerical simulations have been carried out at Reynolds number 0.51×106 based on inlet flow velocity and height of the trailer using the Reynolds-Averaged Navier-Stokes (RANS) approach. Three different configurations of CVTD have been studied, ranging from single to three slabs, equally spaced on the front face of the trailer. Flow field around three different configurations of trap device have been analysed and presented. The results show that a maximum of 12.25% drag reduction can be achieved when a triple vortex trap device is used. Detailed flow field analysis along with pressure contours are presented to elucidate the drag reduction mechanisms of CVTD and why the triple vortex trap configuration produces the maximum drag reduction among the three configurations tested.

Keywords: Aerodynamic drag, cross vortex trap device, truck, RANS.

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1144 An Approach on the Design of a Solar Cell Characterization Device

Authors: Christoph Mayer, Dominik Holzmann

Abstract:

This paper presents the development of a compact, portable and easy to handle solar cell characterization device. The presented device reduces the effort and cost of single solar cell characterization to a minimum. It enables realistic characterization of cells under sunlight within minutes. In the field of photovoltaic research the common way to characterize a single solar cell or a module is, to measure the current voltage curve. With this characteristic the performance and the degradation rate can be defined which are important for the consumer or developer. The paper consists of the system design description, a summary of the measurement results and an outline for further developments.

Keywords: Solar cell, photovoltaics, PV, characterization.

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1143 Fabrication of Microfluidic Device for Quantitative Monitoring of Algal Cell Behavior Using X-ray LIGA Technology

Authors: J. Ruenin, S. Sukprasong, R. Phatthanakun, N. Chomnawang, P. Kuntanawat

Abstract:

In this paper, a simple microfluidic device for monitoring algal cell behavior is proposed. An array of algal microwells is fabricated by PDMS soft-lithography using X-ray LIGA mold, placed on a glass substrate. Two layers of replicated PDMS and substrate are attached by oxygen plasma bonding, creating a microchannel for the microfluidic system. Algal cell are loaded into the microfluidic device, which provides positive charge on the bottom surface of wells. Algal cells, which are negative charged, can be attracted to the bottom of the wells via electrostatic interaction. By varying the concentration of algal cells in the loading suspension, it is possible to obtain wells with a single cell. Liquid medium for cells monitoring are flown continuously over the wells, providing nutrient and waste exchange between the well and the main flow. This device could lead to the uncovering of the quantitative biology of the algae, which is a key to effective and extensive algal utilizations in the field of biotechnology, food industry and bioenergy research and developments.

Keywords: Algal cells, microfluidic device, X-ray LIGA, X-ray lithography, metallic mold, synchrotron light, PDMS

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1142 Spine Evaluation Device with Visual Feedback

Authors: T. Hirata, G. H. Yokoyama, L. H. M. Duque

Abstract:

The posteroanterior manipulation technique is usually include in the procedure of the lumbar spine to evaluate the intervertebral motion according to mechanical resistance. The mechanical device with visual feedback was proposed that allows one to analysis the lumbar segments mobility “in vivo" facilitating for the therapist to take its treatment evolution. The measuring system uses load cell and displacement sensor to estimate spine stiffness. In this work, the device was tested by 2 therapists, female, applying posteroanterior force techniques to 5 volunteers, female, with frequency of approximately 1.2-1.8 Hz. A test-retest procedure was used for 2 periods of day. The visual feedback results small variation of forces and cycle time during 6 cycles rhythmic application. The stiffness values showed good agreement between test-retest procedures when used same order of maximum forces.

Keywords: Biomechanics, lumber spine stiffness, intervertebral manipulation device, visual feedback

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1141 Impact of Gate Insulation Material and Thickness on Pocket Implanted MOS Device

Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO2), aluminum silicate (Al2SiO5), silicon nitride (Si3N4), alumina (Al2O3), hafnium silicate (HfSiO4), tantalum pentoxide (Ta2O5), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and lanthanum oxide (La2O3) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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1140 Characteristics of Football Spectators Using Second Screen

Authors: Florian Pfeffel, Christoph A. Kexel, Peter Kexel, Maria Ratz

Abstract:

The parallel usage of different media channels has increased recently owing to technological advances. Second Screen describes the use of a second device by television viewers to consume further content which is related to the program they are watching. This study analysed the characteristics of football spectators regarding their media consumption in relation to Second Screen usage while watching a football match on TV. The existing literature on Second Screen usage is still very limited, especially in the context of particular broadcasting settings such as sport or even more specific such as football matches. Therefore, the primary research objective was to reveal first insights into the user behaviour of football spectators regarding Second Screen services. The survey, which was conducted among German football supporters in 2015, revealed some characteristics such as the identification and involvement into the sports which are related to an increased use of Second Screen services. One important finding for football supporters was that at the time of a match they have a lower parallel media usage compared to other TV broadcastings. Nevertheless, if supporters used a second device while watching a match on TV, then they were using specific Second Screen services. This means they searched for more content related information. The findings on the habits and characteristics of people who are using Second Screen services are relevant for future developments in that area as well as for marketing decisions.

Keywords: Media consumption, second screen, sport marketing, user behaviour.

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1139 Architectural, Technological and Performance Issues in Enterprise Applications

Authors: Melek Oktay, Ayşe Betül Gülbağcı, Mustafa Sarıöz

Abstract:

Enterprise applications are complex systems that are hard to develop and deploy in organizations. Although software application development tools, frameworks, methodologies and patterns are rapidly developing; many projects fail by causing big costs. There are challenging issues that programmers and designers face with while working on enterprise applications. In this paper, we present the three of the significant issues: Architectural, technological and performance. The important subjects in each issue are pointed out and recommendations are given. In architectural issues the lifecycle, meta-architecture, guidelines are pointed out. .NET and Java EE platforms are presented in technological issues. The importance of performance, measuring performance and profilers are explained in performance issues.

Keywords: Enterprise Applications, Architecture, Technology, Performance.

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1138 Open Channel Flow Measurement of Water by Using Width Contraction

Authors: Arun Goel, D. V. S. Verma, Sanjeev Sangwan

Abstract:

Present study was aimed to develop a discharge measuring device for irrigation and laboratory channels. Experiments were conducted on sharp edged constricted flow meters having four types of width constrictions namely 2:1, 1.5:1, 1:1 and 90o in the direction of flow. These devices were made of MS sheets and installed separately in a rectangular flume. All these four devices were tested under free and submerged flow conditions. Eight different discharges varying from 2 lit/sec to 30 lit/sec were passed through each device. In total around 500 observations of upstream and downstream depths were taken in the present work. For each discharge, free submerged and critical submergence under different flow conditions were noted and plotted. Once the upstream and downstream depths of flow over any of the device are known, the discharge can be easily calculated with the help of the curves developed for free and submerged flow conditions. The device having contraction 2:1 is the most efficient one as it allows maximum critical submergence.

Keywords: Flowrate, flowmeter, open channels, submergence.

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1137 SCR-Based Advanced ESD Protection Device for Low Voltage Application

Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

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1136 On the Operation Mechanism and Device Modeling of AlGaN/GaN High Electron Mobility Transistors (HEMTs)

Authors: Li Yuan, Weizhu Wang, Kean Boon Lee, Haifeng Sun, Susai Lawrence Selvaraj, Shane Todd, Guo-Qiang Lo

Abstract:

In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important roles on the gate leakage blocking and off-state breakdown voltage enhancement.

Keywords: AlGaN/GaN, HEMT, Physical mechanism, TCAD simulation

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1135 Valuation on MEMS Pressure Sensors and Device Applications

Authors: Nurul Amziah Md Yunus, Izhal Abdul Halin, Nasri Sulaiman, Noor Faezah Ismail, Ong Kai Sheng

Abstract:

The MEMS pressure sensor has been introduced and presented in this paper. The types of pressure sensor and its theory of operation are also included. The latest MEMS technology, the fabrication processes of pressure sensor are explored and discussed. Besides, various device applications of pressure sensor such as tire pressure-monitoring system, diesel particulate filter and others are explained. Due to further miniaturization of the device nowadays, the pressure sensor with nanotechnology (NEMS) is also reviewed. The NEMS pressure sensor is expected to have better performance as well as lower in its cost. It has gained an excellent popularity in many applications.

Keywords: Pressure sensor, diaphragm, MEMS, automotive application, biomedical application, NEMS.

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1134 Analysis of a Novel Strained Silicon RF LDMOS

Authors: V.Fathipour, M. A. Malakootian, S. Fathipour, M. Fathipour

Abstract:

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Keywords: High Frequency MOSFET, Design of RF LDMOS, Strained-Silicon, LDMOS.

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