Search results for: Quantum circuits
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 383

Search results for: Quantum circuits

143 Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: Voltage sense amplifier, multi-inputs, voltage transition, node stabilization, and biasing circuits.

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142 Rail-To-Rail Output Op-Amp Design with Negative Miller Capacitance Compensation

Authors: Muhaned Zaidi, Ian Grout, Abu Khari bin A’ain

Abstract:

In this paper, a two-stage op-amp design is considered using both Miller and negative Miller compensation techniques. The first op-amp design uses Miller compensation around the second amplification stage, whilst the second op-amp design uses negative Miller compensation around the first stage and Miller compensation around the second amplification stage. The aims of this work were to compare the gain and phase margins obtained using the different compensation techniques and identify the ability to choose either compensation technique based on a particular set of design requirements. The two op-amp designs created are based on the same two-stage rail-to-rail output CMOS op-amp architecture where the first stage of the op-amp consists of differential input and cascode circuits, and the second stage is a class AB amplifier. The op-amps have been designed using a 0.35mm CMOS fabrication process.

Keywords: Op-amp, rail-to-rail output, Miller compensation, negative Miller capacitance.

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141 The Design of PFM Mode DC-DC Converter with DT-CMOS Switch

Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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140 Metal-Oxide-Semiconductor-Only Process Corner Monitoring Circuit

Authors: Davit Mirzoyan, Ararat Khachatryan

Abstract:

A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.

Keywords: Detection, monitoring, process corner, process variation.

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139 Film Sensors for the Harsh Environment Application

Authors: Wenmin Qu

Abstract:

A capacitance level sensor with a segmented film electrode and a thin-film volume flow sensor with an innovative by-pass sleeve is presented as industrial products for the application in a harsh environment. The working principle of such sensors is well known; however, the traditional sensors show some limitations for certain industrial measurements. The two sensors presented in this paper overcome this limitation and enlarge the application spectrum. The problem is analyzed, and the solution is given. The emphasis of the paper is on developing the problem-solving concepts and the realization of the corresponding measuring circuits. These should give advice and encouragement, how we can still develop electronic measuring products in an almost saturated market.

Keywords: By-pass sleeve, charge transfer circuit, fixed ΔT circuit, harsh environment, industrial application, segmented electrode.

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138 Modeling and Analysis of Twelve-phase (Multi- Phase) DSTATCOM for Multi-Phase Load Circuits

Authors: Zakir Husain

Abstract:

This paper presents modeling and analysis of 12-phase distribution static compensator (DSTATCOM), which is capable of balancing the source currents in spite of unbalanced loading and phase outages. In addition to balance the supply current, the power factor can be set to a desired value. The theory of instantaneous symmetrical components is used to generate the twelve-phase reference currents. These reference currents are then tracked using current controlled voltage source inverter, operated in a hysteresis band control scheme. An ideal compensator in place of physical realization of the compensator is used. The performance of the proposed DTATCOM is validated through MATLAB simulation and detailed simulation results are given.

Keywords: DSTATCOM, Modeling, Load balancing, Multiphase, Power factor correction.

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137 Low Leakage MUX/XOR Functions Using Symmetric and Asymmetric FinFETs

Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

Abstract:

In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

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136 A Decomposition Method for the Bipartite Separability of Bell Diagonal States

Authors: Wei-Chih Su, Kuan-Peng Chen, Ming-Chung Tsai, Zheng-Yao Su

Abstract:

A new decomposition form is introduced in this report to establish a criterion for the bi-partite separability of Bell diagonal states. A such criterion takes a quadratic inequality of the coefficients of a given Bell diagonal states and can be derived via a simple algorithmic calculation of its invariants. In addition, the criterion can be extended to a quantum system of higher dimension.

Keywords: decomposition, bipartite separability, Bell diagonal states.

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135 Three-phases Model of the Induction Machine Taking Account the Stator Faults

Authors: Djalal Eddine Khodja, Aissa Kheldoun

Abstract:

In this work we present the modelling of the induction machine, taking into consideration the stator defects of the induction machine. It is based on the theory of electromagnetic coupling of electrical circuits. In fact, for the modelling of stationary defects such as short circuit between turns in the same phase, we introduce only in the matrix the coefficients of resistance and inductance of stator and in the mutual inductance stator-rotor. These coefficients take account the number of turns in short-circuit deducted from the total number of turns in the same phase; in this way we obtain the number of useful turns. In addition, all these faults involved, will be used for the creation of the database that will be used to develop an automated system failures of the induction machine.

Keywords: Asynchronous machine, Indicatory Values Statorfaults, Multi-turns Model, Three-phases Model.

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134 Bandwidth Allocation for ABR Service in Cellular Networks

Authors: Khaja Kamaluddin, Muhammed Yousoof

Abstract:

Available Bit Rate Service (ABR) is the lower priority service and the better service for the transmission of data. On wireline ATM networks ABR source is always getting the feedback from switches about increase or decrease of bandwidth according to the changing network conditions and minimum bandwidth is guaranteed. In wireless networks guaranteeing the minimum bandwidth is really a challenging task as the source is always in mobile and traveling from one cell to another cell. Re establishment of virtual circuits from start to end every time causes the delay in transmission. In our proposed solution we proposed the mechanism to provide more available bandwidth to the ABR source by re-usage of part of old Virtual Channels and establishing the new ones. We want the ABR source to transmit the data continuously (non-stop) inorderto avoid the delay. In worst case scenario at least minimum bandwidth is to be allocated. In order to keep the data flow continuously, priority is given to the handoff ABR call against new ABR call.

Keywords: Bandwidth allocation, Virtual Channel (VC), CBR, ABR, MCR and QOS.

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133 Active Power Filtering Implementation Using Photovoltaic System with Reduced Energy Storage Capacitor

Authors: Horng-Yuan Wu, Chin-Yuan Hsu, Tsair-Fwu Lee

Abstract:

A novel three-phase active power filter (APF) circuit with photovoltaic (PV) system to improve the quality of service and to reduce the capacity of energy storage capacitor is presented. The energy balance concept and sampling technique were used to simplify the calculation algorithm for the required utility source current and to control the voltage of the energy storage capacitor. The feasibility was verified by using the Pspice simulations and experiments. When the APF mode was used during non-operational period, not only the utilization rate, power factor and power quality could be improved, but also the capacity of energy storage capacitor could sparing. As the results, the advantages of the APF circuit are simplicity of control circuits, low cost, and good transient response.

Keywords: active power filter, sampling, energy-storagecapacitor, harmonic current, energy balance.

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132 Application of a SubIval Numerical Solver for Fractional Circuits

Authors: Marcin Sowa

Abstract:

The paper discusses the subinterval-based numerical method for fractional derivative computations. It is now referred to by its acronym – SubIval. The basis of the method is briefly recalled. The ability of the method to be applied in time stepping solvers is discussed. The possibility of implementing a time step size adaptive solver is also mentioned. The solver is tested on a transient circuit example. In order to display the accuracy of the solver – the results have been compared with those obtained by means of a semi-analytical method called gcdAlpha. The time step size adaptive solver applying SubIval has been proven to be very accurate as the results are very close to the referential solution. The solver is currently able to solve FDE (fractional differential equations) with various derivative orders for each equation and any type of source time functions.

Keywords: Numerical method, SubIval, fractional calculus, numerical solver, circuit analysis.

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131 A Neural Model of Object Naming

Authors: Alessio Plebe

Abstract:

One astonishing capability of humans is to recognize thousands of different objects visually, and to learn the semantic association between those objects and words referring to them. This work is an attempt to build a computational model of such capacity,simulating the process by which infants learn how to recognize objects and words through exposure to visual stimuli and vocal sounds.One of the main fact shaping the brain of a newborn is that lights and colors come from entities of the world. Gradually the visual system learn which light sensations belong to same entities, despite large changes in appearance. This experience is common between humans and several other mammals, like non-human primates. But humans only can recognize a huge variety of objects, most manufactured by himself, and make use of sounds to identify and categorize them. The aim of this model is to reproduce these processes in a biologically plausible way, by reconstructing the essential hierarchy of cortical circuits on the visual and auditory neural paths.

Keywords: Auditory cortex, object recognition, self-organizingmaps

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130 A Multi-Signature Scheme based on Coding Theory

Authors: Mohammed Meziani, Pierre-Louis Cayrel

Abstract:

In this paper we propose two first non-generic constructions of multisignature scheme based on coding theory. The first system make use of the CFS signature scheme and is secure in random oracle while the second scheme is based on the KKS construction and is a few times. The security of our construction relies on a difficult problems in coding theory: The Syndrome Decoding problem which has been proved NP-complete [4].

Keywords: Post-quantum cryptography, Coding-based cryptography, Digital signature, Multisignature scheme.

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129 Suppressing Ambipolar Conduction Using Dual Material Gate in Tunnel-FETs Having Heavily Doped Drain

Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

Abstract:

In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: Dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET.

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128 Dual Construction of Stern-based Signature Scheme

Authors: Pierre-Louis Cayrel, Sidi Mohamed El Yousfi Alaoui

Abstract:

In this paper, we propose a dual version of the first threshold ring signature scheme based on error-correcting code proposed by Aguilar et. al in [1]. Our scheme uses an improvement of Véron zero-knowledge identification scheme, which provide smaller public and private key sizes and better computation complexity than the Stern one. This scheme is secure in the random oracle model.

Keywords: Stern algorithm, Véron algorithm, threshold ring signature, post-quantum cryptography.

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127 Design and Simulation of Low Noise Amplifier Circuit for 5 GHz to 6 GHz

Authors: Hossein Sahoolizadeh, Alishir Moradi Kordalivand, Zargham Heidari

Abstract:

In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation Forces desingners to make choices in the desing of RF circuits. In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using MESFET for frequency range of 5 GHz to 6 GHz. The desing simulation process is down using Advance Design System (ADS). A single stage LNA has successfully designed with 15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3 GHz. Also the designed LNA should be working stably In a frequency range of 5 GHz to 6 GHz.

Keywords: Advance Design System, Low Noise Amplifier, Radio Frequency, Noise Figure.

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126 Time-Domain Analysis of Pulse Parameters Effects on Crosstalk (In High Speed Circuits)

Authors: L. Tani, N. El Ouzzani

Abstract:

Crosstalk among interconnects and printed-circuit board (PCB) traces is a major limiting factor of signal quality in highspeed digital and communication equipments especially when fast data buses are involved. Such a bus is considered as a planar multiconductor transmission line. This paper will demonstrate how the finite difference time domain (FDTD) method provides an exact solution of the transmission-line equations to analyze the near end and the far end crosstalk. In addition, this study makes it possible to analyze the rise time effect on the near and far end voltages of the victim conductor. The paper also discusses a statistical analysis, based upon a set of several simulations. Such analysis leads to a better understanding of the phenomenon and yields useful information.

Keywords: Multiconductor transmission line, Crosstalk, Finite difference time domain (FDTD), printed-circuit board (PCB), Rise time, Statistical analysis.

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125 Intelligent Off-Grid Photovoltaic Supply Systems

Authors: Prashant Kumar Soori, Parthasarathy L., Masami Okano, Awet Mana

Abstract:

Off-grid Photovoltaic (PV) systems are empowering technology in underdeveloped countries like Ethiopia where many people live far away from the modern world. Where there is relatively low energy consumption, providing energy from grid systems is not commercially cost-effective. As a result, significant people groups worldwide stay without access to electricity. One remote village in northern Ethiopia was selected by the United Nations for a pilot project to improve its living conditions. As part of this comprehensive project, an intelligent charge controller circuit for Off-grid PV systems was designed for the clinic in that village. In this paper, design aspects of an intelligent charge controller unit and its load driver circuits are discussed for an efficient utilization of PVbased supply systems.

Keywords: Compact Fluorescent Lamp (CFL), FluorescentLamp, Intelligent Charge Controller Unit (ICCU), Light EmittingDiode (LED), Photovoltaic (PV).

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124 Heuristic Set-Covering-Based Postprocessing for Improving the Quine-McCluskey Method

Authors: Miloš Šeda

Abstract:

Finding the minimal logical functions has important applications in the design of logical circuits. This task is solved by many different methods but, frequently, they are not suitable for a computer implementation. We briefly summarise the well-known Quine-McCluskey method, which gives a unique procedure of computing and thus can be simply implemented, but, even for simple examples, does not guarantee an optimal solution. Since the Petrick extension of the Quine-McCluskey method does not give a generally usable method for finding an optimum for logical functions with a high number of values, we focus on interpretation of the result of the Quine-McCluskey method and show that it represents a set covering problem that, unfortunately, is an NP-hard combinatorial problem. Therefore it must be solved by heuristic or approximation methods. We propose an approach based on genetic algorithms and show suitable parameter settings.

Keywords: Boolean algebra, Karnaugh map, Quine-McCluskey method, set covering problem, genetic algorithm.

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123 Analysis of Complexes Pairing Performat Radical and Water

Authors: Sanaz Gharehzadeh Shirazi, Subira Gharehzadeh Shirazi, Fariba Jafari

Abstract:

The present article comprises a theoretical study of structures Performat radical (HCO3) with H2O molecule. We make use of ab initio quantum chemical methods. Unrestricted Hartee-Fock (UHF) with the basis set6-311+g(2df,2p) and density functional theory (B3LYP) with the basis set 6-311+g(2df,2p) and also we done atoms in molecules (AIM) theory for them. We have found four stable geometries the PerformatRadical(HCO3) with H2O.

Keywords: Hydrogen binding, Performat Radical, Water, Gaussian, Atoms in molecules (AIM) theory

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122 Learning Monte Carlo Data for Circuit Path Length

Authors: Namal A. Senanayake, A. Beg, Withana C. Prasad

Abstract:

This paper analyzes the patterns of the Monte Carlo data for a large number of variables and minterms, in order to characterize the circuit path length behavior. We propose models that are determined by training process of shortest path length derived from a wide range of binary decision diagram (BDD) simulations. The creation of the model was done use of feed forward neural network (NN) modeling methodology. Experimental results for ISCAS benchmark circuits show an RMS error of 0.102 for the shortest path length complexity estimation predicted by the NN model (NNM). Use of such a model can help reduce the time complexity of very large scale integrated (VLSI) circuitries and related computer-aided design (CAD) tools that use BDDs.

Keywords: Monte Carlo data, Binary decision diagrams, Neural network modeling, Shortest path length estimation.

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121 Modeling the Transport of Charge Carriers in the Active Devices MESFET, Based of GaInP by the Monte Carlo Method

Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

Abstract:

The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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120 Fault Detection of Broken Rotor Bars Using Stator Current Spectrum for the Direct Torque Control Induction Motor

Authors: Ridha Kechida, Arezki Menacer, Abdelhamid Benakcha

Abstract:

The numerous qualities of squirrel cage induction machines enhance their use in industry. However, various faults can occur, such as stator short-circuits and rotor failures. In this paper, we use a technique based on the spectral analysis of stator current in order to detect the fault in the machine: broken rotor bars. Thus, the number effect of the breaks has been highlighted. The effect is highlighted by considering the machine controlled by the Direct Torque Control (DTC). The key to fault detection is the development of a simplified dynamic model of a squirrel cage induction motor taking account the broken bars fault and the stator current spectrum analysis (FFT).

Keywords: Rotor faults, diagnosis, induction motor, DTC, statorcurrent spectrum.

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119 Improvement in Silicon on Insulator Devices using Strained Si/SiGe Technology for High Performance in RF Integrated Circuits

Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

Abstract:

RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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118 ANN Models for Microstrip Line Synthesis and Analysis

Authors: Dr.K.Sri Rama Krishna, J.Lakshmi Narayana, Dr.L.Pratap Reddy

Abstract:

Microstrip lines, widely used for good reason, are broadband in frequency and provide circuits that are compact and light in weight. They are generally economical to produce since they are readily adaptable to hybrid and monolithic integrated circuit (IC) fabrication technologies at RF and microwave frequencies. Although, the existing EM simulation models used for the synthesis and analysis of microstrip lines are reasonably accurate, they are computationally intensive and time consuming. Neural networks recently gained attention as fast and flexible vehicles to microwave modeling, simulation and optimization. After learning and abstracting from microwave data, through a process called training, neural network models are used during microwave design to provide instant answers to the task learned.This paper presents simple and accurate ANN models for the synthesis and analysis of Microstrip lines to more accurately compute the characteristic parameters and the physical dimensions respectively for the required design specifications.

Keywords: Neural Models, Algorithms, Microstrip Lines, Analysis, Synthesis

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117 A Sub-Pixel Image Registration Technique with Applications to Defect Detection

Authors: Zhen-Hui Hu, Jyh-Shong Ju, Ming-Hwei Perng

Abstract:

This paper presents a useful sub-pixel image registration method using line segments and a sub-pixel edge detector. In this approach, straight line segments are first extracted from gray images at the pixel level before applying the sub-pixel edge detector. Next, all sub-pixel line edges are mapped onto the orientation-distance parameter space to solve for line correspondence between images. Finally, the registration parameters with sub-pixel accuracy are analytically solved via two linear least-square problems. The present approach can be applied to various fields where fast registration with sub-pixel accuracy is required. To illustrate, the present approach is applied to the inspection of printed circuits on a flat panel. Numerical example shows that the present approach is effective and accurate when target images contain a sufficient number of line segments, which is true in many industrial problems.

Keywords: Defect detection, Image registration, Straight line segment, Sub-pixel.

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116 Numerical Analysis and Design of Dielectric to Plasmonic Waveguides Couplers

Authors: Emanuela Paranhos Lima, Vitaly Félix Rodríguez Esquerre

Abstract:

In this work, efficient directional coupler composed of dielectric waveguides and metallic film has been analyzed in details by simulations using finite element method (FEM). The structure consists of a step-index fiber with dielectric core, silica cladding, and a metal nanowire parallel to the core. The results show that an efficient conversion of optical dielectric modes to long range plasmonic is possible. Low insertion losses in conjunction with short coupling length and a broadband operation can be achieved under certain conditions. This kind of couplers has potential applications for the design of photonic integrated circuits for signal routing between dielectric/plasmonic waveguides, sensing, lithography, and optical storage systems. A high efficient focusing of light in a very small region can be obtained.

Keywords: Directional coupler, finite element method, metallic nanowire, plasmonic, surface plasmon polariton.

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115 An Analytical Electron Mobility Model based on Particle Swarm Computation for Siliconbased Devices

Authors: F. Djeffal, N. Lakhdar, T. Bendib

Abstract:

The study of the transport coefficients in electronic devices is currently carried out by analytical and empirical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the different characteristics of the electronic silicon-based devices. Further progress in the development, design and optimization of Silicon-based devices necessarily requires new theory and modeling tools. In our study, we use the PSO (Particle Swarm Optimization) technique as a computational tool to develop analytical approaches in order to study the transport phenomenon of the electron in crystalline silicon as function of temperature and doping concentration. Good agreement between our results and measured data has been found. The optimized analytical models can also be incorporated into the circuits simulators to study Si-based devices without impact on the computational time and data storage.

Keywords: Particle Swarm, electron mobility, Si-based devices, Optimization.

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114 Design of a Low Power Compensated 90nm RF Multiplier with Improved Isolation Characteristics for a Transmitted Reference Receiver Front End

Authors: Apratim Roy, A. B. M. H. Rashid

Abstract:

In this paper, a double balanced radio frequency multiplier is presented which is customized for transmitted reference ultra wideband (UWB) receivers. The multiplier uses 90nm model parameters and exploits compensating transistors to provide controllable gain for a Gilbert core. After performing periodic and quasiperiodic non linear analyses the RF mixer (multiplier) achieves a voltage conversion gain of 16 dB and a DSB noise figure of 8.253 dB with very low power consumption. A high degree of LO to RF isolation (in the range of -94dB), RF to IF isolation (in the range of -95dB) and LO to IF isolation (in the range of -143dB) is expected for this design with an input-referred IP3 point of -1.93 dBm and an input referred 1 dB compression point of -10.67dBm. The amount of noise at the output is 7.7 nV/√Hz when the LO input is driven by a 10dBm signal. The mixer manifests better results when compared with other reported multiplier circuits and its Zero-IF performance ensures its applicability as TR-UWB multipliers.

Keywords: UWB, Transmitted Reference, Controllable Gain, RFMixer, Multiplier.

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