Search results for: thin film transistor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1970

Search results for: thin film transistor

1730 Comparative Evaluation of EBT3 Film Dosimetry Using Flat Bad Scanner, Densitometer and Spectrophotometer Methods and Its Applications in Radiotherapy

Authors: K. Khaerunnisa, D. Ryangga, S. A. Pawiro

Abstract:

Over the past few decades, film dosimetry has become a tool which is used in various radiotherapy modalities, either for clinical quality assurance (QA) or dose verification. The response of the film to irradiation is usually expressed in optical density (OD) or net optical density (netOD). While the film's response to radiation is not linear, then the use of film as a dosimeter must go through a calibration process. This study aimed to compare the function of the calibration curve of various measurement methods with various densitometer, using a flat bad scanner, point densitometer and spectrophotometer. For every response function, a radichromic film calibration curve is generated from each method by performing accuracy, precision and sensitivity analysis. netOD is obtained by measuring changes in the optical density (OD) of the film before irradiation and after irradiation when using a film scanner if it uses ImageJ to extract the pixel value of the film on the red channel of three channels (RGB), calculate the change in OD before and after irradiation when using a point densitometer, and calculate changes in absorbance before and after irradiation when using a spectrophotometer. the results showed that the three calibration methods gave readings with a netOD precision of doses below 3% for the uncertainty value of 1σ (one sigma). while the sensitivity of all three methods has the same trend in responding to film readings against radiation, it has a different magnitude of sensitivity. while the accuracy of the three methods provides readings below 3% for doses above 100 cGy and 200 cGy, but for doses below 100 cGy found above 3% when using point densitometers and spectrophotometers. when all three methods are used for clinical implementation, the results of the study show accuracy and precision below 2% for the use of scanners and spectrophotometers and above 3% for precision and accuracy when using point densitometers.

Keywords: Callibration Methods, Film Dosimetry EBT3, Flat Bad Scanner, Densitomete, Spectrophotometer

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1729 Potential Applications and Future Prospects of Zinc Oxide Thin Films

Authors: Temesgen Geremew

Abstract:

ZnO is currently receiving a lot of attention in the semiconductor industry due to its unique characteristics. ZnO is widely used in solar cells, heat-reflecting glasses, optoelectronic bias, and detectors. In this composition, we provide an overview of the ZnO thin flicks' packages, methods of characterization, and implicit operations. They consist of Transmission spectroscopy, Raman spectroscopy, Field emigration surveying electron microscopy, and X-ray diffraction. This review content also demonstrates how ZnO thin flicks function in electrical components for piezoelectric bias, optoelectronics, detectors, and renewable energy sources. Zinc oxide (ZnO) thin films offer a captivating tapestry of possibilities due to their unique blend of electrical, optical, and mechanical properties. This review delves into the realm of their potential applications and future prospects, highlighting the pivotal contributions of research endeavors aimed at tailoring their functionalities.

Keywords: Zinc oxide, raman spectroscopy, thin films, piezoelectric devices

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1728 An Investigation on the Suitability of Dual Ion Beam Sputtered GMZO Thin Films: For All Sputtered Buffer-Less Solar Cells

Authors: Vivek Garg, Brajendra S. Sengar, Gaurav Siddharth, Nisheka Anadkat, Amitesh Kumar, Shailendra Kumar, Shaibal Mukherjee

Abstract:

CuInGaSe (CIGSe) is the dominant thin film solar cell technology. The band alignment of Buffer/CIGSe interface is one of the most crucial parameters for solar cell performance. In this article, the valence band offset (VBOff) and conduction band offset (CBOff) values of Cu(In0.70Ga0.30)Se/ 1 at.% Ga: Mg0.25Zn0.75O (GMZO) heterojunction, grown by dual ion beam sputtering system (DIBS), are calculated to understand the carrier transport mechanism at the heterojunction for the realization of all sputtered buffer-less solar cells. To determine the valence band offset (VBOff), ∆E_V at GMZO/CIGSe heterojunction interface, the standard method based on core-level photoemission is utilized. The value of ∆E_V can be evaluated by considering common core-level peaks. In our study, the values of (Valence band onset)VBOn, obtained by linear extrapolation method for GMZO and CIGSe films are calculated to be 2.86 and 0.76 eV. In the UPS spectra peak positions of Se 3d is observed in UPS spectra at 54.82 and 54.7 eV for CIGSe film and GMZO/CIGSe interface respectively, while the peak position of Mg 2p is observed at 50.09 and 50.12 eV for GMZO and GMZO/CIGSe interface respectively. The optical band gap of CIGSe and GMZO are obtained from absorption spectra procured from spectroscopic ellipsometry are 1.26 and 3.84 eV respectively. The calculated average values of ∆E_v and ∆E_C are estimated to be 2.37 and 0.21 eV, respectively, at room temperature. The calculated positive conduction band offset termed as a spike at the absorber junction is the required criterion for the high-efficiency solar cells for the efficient charge extraction from the junction. So we can conclude that the above study confirms GMZO thin films grown by the dual ion beam sputtering system are the suitable candidate for the CIGSe thin films based ultra-thin buffer-less solar cells. We investigated the band-offset properties at the GMZO/CIGSe heterojunction to verify the suitability of the GMZO for the realization of the buffer-less solar cells. The calculated average values of ∆E_V and ∆E_C are estimated to be 2.37 and 0.21 eV, respectively, at room temperature. The calculated positive conduction band offset termed as a spike at the absorber junction is the required criterion for the high-efficiency solar cells for the efficient charge extraction from the junction. So we can conclude that the above study confirms GMZO thin films grown by the dual ion beam sputtering system are the suitable candidate for the CIGSe thin films based ultra-thin buffer-less solar cells. Acknowledgment: We are thankful to DIBS, EDX, and XRD facility equipped at Sophisticated Instrument Centre (SIC) at IIT Indore. The authors B.S.S and A.K acknowledge CSIR and V.G acknowledge UGC, India for their fellowships. B.S.S is thankful to DST and IUSSTF for BASE Internship Award. Prof. Shaibal Mukherjee is thankful to DST and IUSSTF for BASE Fellowship and MEITY YFRF award. This work is partially supported by DAE BRNS, DST CERI, and DST-RFBR Project under India-Russia Programme of Cooperation in Science and Technology. We are thankful to Mukul Gupta for SIMS facility equipped at UGC-DAE Indore.

Keywords: CIGSe, DIBS, GMZO, solar cells, UPS

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1727 High Efficiency Achievement by a New Heterojunction N-Zno:Al/P-Si Solar Cell

Authors: A. Bouloufa, F. Khaled, K. Djessas

Abstract:

This paper presents a new structure of solar cell based on p-type microcrystalline silicon as an absorber and n-type aluminum doped zinc oxide (ZnO:Al) transparent conductive oxide as an optical window. The ZnO:Al layer deposited by rf-magnetron sputtering at room temperature yields a low resistivity about 7,64.10-2Ω.cm and more than 85% mean optical transmittance in the VIS–NIR range, with an optical band gap of 3.3 eV. These excellent optical properties of this layer in combination with an optimal contact at the front surface result in a superior light trapping yielding to efficiencies about 20%. In order to improve efficiency, we have used a p+-µc-Si thin layer highly doped as a back surface field which minimizes significantly the impact of rear surface recombination velocity on voltage and current leading to a high efficiency of 24%. Optoelectronic parameters were determined using the current density-voltage (J-V) curve by means of a numerical simulation with Analysis of Microelectronic and Photonic Structures (AMPS-1D) device simulator.

Keywords: optical window, thin film, solar cell, efficiency

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1726 Load Bearing Capacity and Operational Effectiveness of Single Shear Joints of CFRP Composite Laminate with Spread Tow Thin Plies

Authors: Tabrej Khan, Tamer A. Sebaey, Balbir Singh, M. A. Umarfarooq

Abstract:

Spread-tow thin-ply-based technology has resulted in the progress of optimized reinforced composite plies with ultra-low thicknesses. There is wide use of composite bolted joints in the aircraft industry for load-bearing structures, and they are regarded as the primary source of stress concentration. The purpose of this study is to look into the bearing strength and structural performance of single shear bolt joint configurations in composite laminates, which are basically a combination of conventional thin-plies and thick-plies in some specific stacking sequence. The placement effect of thin-ply within the configured stack on bearing strength, as well as the potential damages, were investigated. Mechanical tests were used to understand the disfigurement mechanisms of the plies and their reciprocity, as well as to reflect on the single shear bolt joint properties and its load-bearing capacity. The results showed that changing the configuration of laminates by inserting the thin plies inside improved the bearing strength by up to 19%.

Keywords: hybrid composites, delamination, stress concentrations, mechanical testing, single bolt joint, thin-plies

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1725 Novel Routes to the Synthesis and Functionalization of Metallic and Semiconductor Thin Film and Nanoparticles

Authors: Hanan. Al Chaghouri, Mohammad Azad Malik, P. John Thomas, Paul O’Brien

Abstract:

The process of assembling metal nanoparticles at the interface of two liquids has received a great deal of attention over the past few years due to a wide range of important applications and their unusual properties as compared to bulk materials. We present a low cost, simple and cheap synthesis of metal nanoparticles, core/shell structures and semiconductors followed by assembly of these particles between immiscible liquids. The aim of this talk is divided to three parts: Firstly, to describe the achievement of a closed loop recycling for producing cadmium sulfide as powders and/or nanostructured thin films for solar cells or other optoelectronic devices applications by using a different chain length of commercially available secondary amines of dithiocarbamato complexes. The approach can be extended to other metal sulfides such as those of Zn, Pb, Cu, or Fe and many transition metals and oxides. Secondly, to synthesis significantly cheaper magnetic particles suited for the mass market. Ni/NiO nanoparticles with ferromagnetic properties at room temperature were among the smallest and strongest magnets (5 nm) were made in solution. The applications of this work can be to produce viable storage devices and the other possibility is to disperse these nanocrystals in solution and use it to make ferrofluids which have a number of mature applications. The third part is about preparing and assembling of submicron silver, cobalt and nickel particles by using polyol methods and liquid/liquid interface, respectively. Coinage metals like gold, copper and silver are suitable for plasmonic thin film solar cells because of their low resistivity and strong interactions with visible light waves. Silver is the best choice for solar cell application since it has low absorption losses and high radiative efficiency compared to gold and copper. Assembled cobalt and nickel as films are promising for spintronic, magnetic and magneto-electronic and biomedics.

Keywords: metal nanoparticles, core/shell structures and semiconductors, ferromagnetic properties, closed loop recycling, liquid/liquid interface

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1724 For Single to Multilayer Polyvinylidene Fluoride Based Polymer for Electro-Caloric Cooling

Authors: Nouh Zeggai, Lucas Debrux, Fabien Parrain, Brahim Dkhil, Martino Lobue, Morgan Almanza

Abstract:

Refrigeration and air conditioning are some of the most used energies in our daily life, especially vapor compression refrigeration. Electrocaloric material might appears as an alternative towards solid-state cooling. polyvinylidene fluoride (PVDF) based polymer has shown promising adiabatic temperature change (∆T) and entropy change (∆S). There is practically no limit to the electric field that can be applied, except the one that the material can withstand. However, when working with a large surface as required in a device, the chance to have a defect is larger and can drastically reduce the voltage breakdown, thus reducing the electrocaloric properties. In this work, we propose to study how the characteristic of a single film are transposed when going to multilayer. The laminator and the hot press appear as two interesting processes that have been investigating to achieve a multilayer film. The study is mainly focused on the breakdown field and the adiabatic temperature change, but the phase and crystallinity have also been measured. We process one layer-based PVDF and assemble them to obtain a multilayer. Pressing at hot temperature method and lamination were used for the production of the thin films. The multilayer film shows higher breakdown strength, temperature change, and crystallinity (beta phases) using the hot press technique.

Keywords: PVDF-TrFE-CFE, multilayer, electrocaloric effect, hot press, cooling device

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1723 Thermal and Starvation Effects on Lubricated Elliptical Contacts at High Rolling/Sliding Speeds

Authors: Vinod Kumar, Surjit Angra

Abstract:

The objective of this theoretical study is to develop simple design formulas for the prediction of minimum film thickness and maximum mean film temperature rise in lightly loaded high-speed rolling/sliding lubricated elliptical contacts incorporating starvation effect. Herein, the reported numerical analysis focuses on thermoelastohydrodynamically lubricated rolling/sliding elliptical contacts, considering the Newtonian rheology of lubricant for wide range of operating parameters, namely load characterized by Hertzian pressure (PH = 0.01 GPa to 0.10 GPa), rolling speed (>10 m/s), slip parameter (S varies up to 1.0), and ellipticity ratio (k = 1 to 5). Starvation is simulated by systematically reducing the inlet supply. This analysis reveals that influences of load, rolling speed, and level of starvation are significant on the minimum film thickness. However, the maximum mean film temperature rise is strongly influenced by slip in addition to load, rolling speed, and level of starvation. In the presence of starvation, reduction in minimum film thickness and increase in maximum mean film temperature are observed. Based on the results of this study, empirical relations are developed for the prediction of dimensionless minimum film thickness and dimensionless maximum mean film temperature rise at the contacts in terms of various operating parameters.

Keywords: starvation, lubrication, elliptical contact, traction, minimum film thickness

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1722 Photoelectrochemical Study of Nanostructured Acropora-Like Lead Sulfide Thin Films

Authors: S. Kaci, A. Keffous, O. Fellahi, I. Bozetine, H. Menari

Abstract:

In this paper, we report the fabrication and characterization of Acropora-like lead sulfide nanostructured thin films using chemical bath deposition. The method has the strong points of low temperature and no surfactant, comparing with the other method. The preferential growth directions of the broad branches were indexed as along (200) directions. The photoelectrochemical property of the as-deposited thin films was also investigated. Photoelectrochemical characterization was performed in the aim to determine the flat band potential (Vfb) and to confirm the n-type character of PbS, elucidated from the J(V) curves both in the dark and under illumination. The apparition of the photocurrent Jph started at a potential VON of −0.41 V/ECS and increased towards the anodic direction, which is typical of n-type behavior. The near infrared absorbance spectrum displayed an absorbance edge at 1959 nm, showing blue shift comparing to bulk PbS (3020 nm). These nanostructured lead sulfide thin films may have potential application as dispersed photoelectrode capable of generating H2 under visible light.

Keywords: lead sulfide, nanostructures, photo-conversion, thin films

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1721 Carbon Nanotube Field Effect Transistor - a Review

Authors: P. Geetha, R. S. D. Wahida Banu

Abstract:

The crowning advances in Silicon based electronic technology have dominated the computation world for the past decades. The captivating performance of Si devices lies in sustainable scaling down of the physical dimensions, by that increasing device density and improved performance. But, the fundamental limitations due to physical, technological, economical, and manufacture features restrict further miniaturization of Si based devices. The pit falls are due to scaling down of the devices such as process variation, short channel effects, high leakage currents, and reliability concerns. To fix the above-said problems, it is needed either to follow a new concept that will manage the current hitches or to support the available concept with different materials. The new concept is to design spintronics, quantum computation or two terminal molecular devices. Otherwise, presently used well known three terminal devices can be modified with different materials that suits to address the scaling down difficulties. The first approach will occupy in the far future since it needs considerable effort; the second path is a bright light towards the travel. Modelling paves way to know not only the current-voltage characteristics but also the performance of new devices. So, it is desirable to model a new device of suitable gate control and project the its abilities towards capability of handling high current, high power, high frequency, short delay, and high velocity with excellent electronic and optical properties. Carbon nanotube became a thriving material to replace silicon in nano devices. A well-planned optimized utilization of the carbon material leads to many more advantages. The unique nature of this organic material allows the recent developments in almost all fields of applications from an automobile industry to medical science, especially in electronics field-on which the automation industry depends. More research works were being done in this area. This paper reviews the carbon nanotube field effect transistor with various gate configurations, number of channel element, CNT wall configurations and different modelling techniques.

Keywords: array of channels, carbon nanotube field effect transistor, double gate transistor, gate wrap around transistor, modelling, multi-walled CNT, single-walled CNT

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1720 3D Simulation and Modeling of Magnetic-Sensitive on n-type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DGMOSFET)

Authors: M. Kessi

Abstract:

We investigated the effect of the magnetic field on carrier transport phenomena in the transistor channel region of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This explores the Lorentz force and basic physical properties of solids exposed to a constant external magnetic field. The magnetic field modulates the electrons and potential distribution in the case of silicon Tunnel FETs. This modulation shows up in the device's external electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), the threshold voltage (VTH), the magneto-transconductance (gm) and the output magneto-conductance (gDS) of Tunnel FET. Moreover, the channel doping concentration and potential distribution are obtained using the numerical method by solving Poisson’s transport equation in 3D modules semiconductor magnetic sensors available in Silvaco TCAD tools. The numerical simulations of the magnetic nano-sensors are relatively new. In this work, we present the results of numerical simulations based on 3D magnetic sensors. The results show excellent accuracy comportment and good agreement compared with that obtained in the experimental study of MOSFETs technology.

Keywords: single-gate MOSFET, magnetic field, hall field, Lorentz force

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1719 Effects of the Tomato Pomace Oil Extract on Physical and Antioxidant Properties of Gelatin Films

Authors: N. Jirukkakul, J. Sodtipinta

Abstract:

Tomatoes are widely consumed as fresh and processed products through the manufacturing industry. Therefore, tomato pomace is generated as a by-product accounting for about 5-13% of the whole tomato. Antioxidants still remain in tomato pomace and extraction of tomato oil may useful in edible film production. The edible film solution was prepared by mixing gelatin (2, 4 and 6%) with the distilled water and heating at 40oC for 30 min. Effect of tomato pomace oil was evaluated at 0, 0.5 and 1%. Film solution was poured in plate and dried overnight at 40oC before determining the physical properties, which are tensile strength, moisture content, color, solubility, and swelling power. The results showed that an increase gelatin concentration caused increasing of tensile strength, moisture content, solubility and swelling power. The edible film with tomato pomace oil extract appeared as the rough film with oil droplet dispersion. The addition of tomato pomace oil extract caused an increase in lightness, redness and yellowness, while tensile strength, moisture content, and solubility were decreased. Film with tomato pomace oil extract at 0.5 and 1% exhibited antioxidant properties but those properties were not significantly different (p<0.05) between film incorporated with tomato pomace oil extract 0.5 and 1%. The suitable condition for film production in this study, 4% of gelatin and 0.5% of tomato pomace oil extract, was selected for protecting oxidation of palm oil. At 15 days of the storage period, the palm oil which covered by gelatin film with tomato pomace oil extract had 22.45 milliequivalents/kg of peroxide value (PV), while, the palm oil which covered by polypropylene film and control had 24.79 and 26.67 milliequivalents/kg, respectively. Therefore, incorporation of tomato pomace oil extract in gelatin film was able to protect the oxidation of food products with high fat content.

Keywords: antioxidant, gelatin films, physical properties, tomato oil extract

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1718 Surface Functionalization of Chemical Vapor Deposition Grown Graphene Film

Authors: Prashanta Dhoj Adhikari

Abstract:

We report the introduction of the active surface functionalization group on chemical vapor deposition (CVD) grown graphene film by wet deposition method. The activity of surface functionalized group was tested with surface modified carbon nanotubes (CNTs) and found that both materials were amalgamated by chemical bonding. The introduction of functional group on the graphene film surface and its vigorous role to bind CNTs with the present technique could provide an efficient, novel route to device fabrication.

Keywords: chemical vapor deposition, graphene film, surface functionalization

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1717 Modeling and Design of E-mode GaN High Electron Mobility Transistors

Authors: Samson Mil'shtein, Dhawal Asthana, Benjamin Sullivan

Abstract:

The wide energy gap of GaN is the major parameter justifying the design and fabrication of high-power electronic components made of this material. However, the existence of a piezo-electrics in nature sheet charge at the AlGaN/GaN interface complicates the control of carrier injection into the intrinsic channel of GaN HEMTs (High Electron Mobility Transistors). As a result, most of the transistors created as R&D prototypes and all of the designs used for mass production are D-mode devices which introduce challenges in the design of integrated circuits. This research presents the design and modeling of an E-mode GaN HEMT with a very low turn-on voltage. The proposed device includes two critical elements allowing the transistor to achieve zero conductance across the channel when Vg = 0V. This is accomplished through the inclusion of an extremely thin, 2.5nm intrinsic Ga₀.₇₄Al₀.₂₆N spacer layer. The added spacer layer does not create piezoelectric strain but rather elastically follows the variations of the crystal structure of the adjacent GaN channel. The second important factor is the design of a gate metal with a high work function. The use of a metal gate with a work function (Ni in this research) greater than 5.3eV positioned on top of n-type doped (Nd=10¹⁷cm⁻³) Ga₀.₇₄Al₀.₂₆N creates the necessary built-in potential, which controls the injection of electrons into the intrinsic channel as the gate voltage is increased. The 5µm long transistor with a 0.18µm long gate and a channel width of 30µm operate at Vd=10V. At Vg =1V, the device reaches the maximum drain current of 0.6mA, which indicates a high current density. The presented device is operational at frequencies greater than 10GHz and exhibits a stable transconductance over the full range of operational gate voltages.

Keywords: compound semiconductors, device modeling, enhancement mode HEMT, gallium nitride

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1716 Effect of TERGITOL NP-9 and PEG-10 Oleyl Phosphate as Surfactant and Corrosion Inhibitor on Tribo-Corrosion Performance of Carbon Steel in Emulsion-Based Drilling Fluids

Authors: Mohammadjavad Palimi, D. Y. Li, E. Kuru

Abstract:

Emulsion-based drilling fluids containing mineral oil are commonly used for drilling operations, which generate a lubricating film to prevent direct contact between moving metal parts, thus reducing friction, wear, and corrosion. For long-lasting lubrication, the thin lubricating film formed on the metal surface should possess good anti-wear and anti-corrosion capabilities. This study aims to investigate the effects of two additives, TERGITOL NP-9 and PEG-10 oleyl phosphate, acting as surfactant and corrosion inhibitor, respectively, on the tribo-corrosion behavior of 1018 carbon steel immersed in 5% KCl solution at room temperature. A pin-on-disc tribometer attached to an electrochemical system was used to investigate the corrosive wear of the steel immersed in emulsion-based fluids containing the surfactant and corrosion inhibitor. The wear track, surface chemistry and composition of the protective film formed on the steel surface were analyzed with an optical profilometer, SEM, and SEM-EDX. Results of the study demonstrate that the performance of the emulsion-based drilling fluids was significantly improved by the corrosion inhibitor by a remarkable reduction in corrosion, coefficient of friction (COF) and wear.

Keywords: corrosion inhibitor, emulsion-based drilling fluid, tribo-corrosion, friction, wear

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1715 Analysis of Vibration of Thin-Walled Parts During Milling Made of EN AW-7075 Alloy

Authors: Jakub Czyżycki, Paweł Twardowski

Abstract:

Thin-walled components made of aluminum alloys are increasingly found in many fields of industry, and they dominate the aerospace industry. The machining of thinwalled structures encounters many difficulties related to the high susceptibility of the workpiece, which causes vibrations including the most unfavorable ones called chatter. The effect of these phenomena is the difficulty in obtaining the required geometric dimensions and surface quality. The purpose of this study is to analyze vibrations arising during machining of thin-walled workpieces made of aluminum alloy EN AW-7075. Samples representing actual thin-walled workpieces were examined in a different range of dimensions characterizing thin-walled workpieces. The tests were carried out in HSM high-speed machining (cutting speed vc = 1400 m/min) using a monolithic solid carbide endmill. Measurement of vibration was realized using a singlecomponent piezoelectric accelerometer 4508C from Brüel&Kjær which was mounted directly on the sample before machining, the measurement was made in the normal feed direction AfN. In addition, the natural frequency of the tested thin-walled components was investigated using a laser vibrometer for an broader analysis of the tested samples. The effect of vibrations on machining accuracy was presented in the form of surface images taken with an optical measuring device from Alicona. A classification of the vibrations produced during the test was carried out, and were analyzed in both the time and frequency domains. Observed significant influence of the thickness of the thin-walled component on the course of vibrations during machining.

Keywords: high-speed machining, thin-walled elements, thin-walled components, milling, vibrations

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1714 The Effect of the Calcination Temperature and SiO2 Addition on the Physical Properties’ of Sol Gel TiO2 Thin Films

Authors: Nour El Houda Arabi, Aicha Iratni, Talaighil Razika, Bruno Capoen, Mohamed Bouazaoui

Abstract:

In this paper, we report the effect of the calcination temperature and SiO2 addition on structural, optical and hydrophilicity of TiO2 films deposited by deep-coating sol-gel process. XRD investigation of the structural TiO2 films with increasing the temperature calcination, reveals that rutile phase will appear for the high temperature (>1000°C). However, the addition of SiO2 relate the densification of TiO2 films. Ellipsometric and UV-visible measure show that the refractive index grow with increasing temperature, against the film thickness decreases. On the other hand, the addition of SiO2 decreases the refractive index and increases the TiO2 film thickness. Finally, the hydrophilicity is assisted by contact angle measurement. It is found that addition of 50% of SiO2 to TiO2 is most effective for reducing the contact angle of water.

Keywords: physical properties, sol, gel, TiO2/SiO2 composite films

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1713 Effect of Intrinsic Point Defects on the Structural and Optical Properties of SnO₂ Thin Films Grown by Ultrasonic Spray Pyrolysis Method

Authors: Fatiha Besahraoui, M'hamed Guezzoul, Kheira Chebbah, M'hamed Bouslama

Abstract:

SnO₂ thin film is characterized by Atomic Force Microscopy (AFM) and Photoluminescence Spectroscopies. AFM images show a dense surface of columnar grains with a roughness of 78.69 nm. The PL measurements at 7 K reveal the presence of PL peaks centered in IR and visible regions. They are attributed to radiative transitions via oxygen vacancies, Sn interstitials, and dangling bonds. A bands diagram model is presented with the approximate positions of intrinsic point defect levels in SnO₂ thin films. The integrated PL measurements demonstrate the good thermal stability of our sample, which makes it very useful in optoelectronic devices functioning at room temperature. The unusual behavior of the evolution of PL peaks and their full width at half maximum as a function of temperature indicates the thermal sensitivity of the point defects present in the band gap. The shallower energy levels due to dangling bonds and/or oxygen vacancies are more sensitive to the temperature. However, volume defects like Sn interstitials are thermally stable and constitute deep and stable energy levels for excited electrons. Small redshifting of PL peaks is observed with increasing temperature. This behavior is attributed to the reduction of oxygen vacancies.

Keywords: transparent conducting oxide, photoluminescence, intrinsic point defects, semiconductors, oxygen vacancies

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1712 Heat Transfer Characteristics of Film Condensation

Authors: M. Mosaad, J. H. Almutairi, A. S. Almutairi

Abstract:

In this paper, saturated-vapour film condensation on a vertical wall with the backside cooled by forced convection is analyzed as a conjugate problem. In the analysis, the temperature and heat flux at the wall sides are assumed unknown and determined from the solution. The model is presented in a dimensionless form to take a broad view of the solution. The dimensionless variables controlling this coupled heat transfer process are discovered from the analysis. These variables explain the relative impact of the interactive heat transfer mechanisms of forced convection and film condensation. The study shows that the conjugate treatment of film condensation process yields results different from that predicted by a non-conjugate Nusselt-type solution, wherein the effect of the cooling fluid is neglected.

Keywords: film condensation, forced convection, coupled heat transfer, analytical modelling

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1711 Microbiological Assessment of Fish Sausages Coated with Smoked-Edible Film, and Stored in Room and Refrigerator Temperatures

Authors: Henny A. Dien, Roike I. Montolalu, Feny Mentang, Jupni Keno, Reynerd S. Burdam, Siegfried Berhimpon

Abstract:

Fish Sausages became popular nowadays, because of high nutritious and low in cholesterol. However, this food is also highly perishable and often contaminated by pathogen bacteria. Edible film was made from myofibril of Black Marlin (Makaira indica) waste, with addition of liquid smoke 0.8%. The aim of this study were to determine the TPC, total coliform and Escherichia coli in fish sausages coated with smoked edible film, and stored in room temperature (26-29oC), and refrigerator (5-10oC). Results shown that TPC in fish sausages coated with smoked edible film were lower than that of without coated, both for storage in room temperature and in refrigerator. Total coliform in coated with smoked edible film and stored in room temperature ranged between 7-120 MPN/g (1-4 days), while stored in refrigerator ranged between 7-93 MPN/g (1-6 days); while fish sausages coated with edible film without liquid smoke were 7-240 MPN/g (1-4 days) in room temperature, and 7-150 MPN/g in refrigerator. Total E. coli of fish sausages coated with smoked edible film and stored in room temperature ranged between 3-4 MPN/g (1-4 days), while stored in refrigerator ranged were 3 MPN/g (1-6 days); while fish sausages coated with edible film without smoked both stored in room temperature and in refrigerator, shown total E. coli 3 MPN/g during 4 days in room temperature, and 6 days in refrigerator. Total E. coli of sausages without coated stored in room temperature ranged between 7-24 MPN/g, and that of stored in refrigerator ranged between 3-4 MPN/g.

Keywords: smoke liquid, edible film, coating, sausages

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1710 Encapsulation of Flexible OLED with an Auxiliary Sealing Line

Authors: Hanjun Yun, Gun Bae, Nabin Paul, Cheolhee Moon

Abstract:

Flexible OLED is an important technology for the next generation display over various kinds of applications. However, the organic materials of OLEDs degrade rapidly under the invasion of oxygen and water moisture. The degradation causes the formation of non-emitting areas which gradually suppress the device brightness, ultimately the lifetime of the device decreasing rapidly. Until now, the most suitable sealing process of the flexible OLED devices is a thin film encapsulation (TFE). However, TFE consists of a multilayer thin-film structure with organic-inorganic materials, so the cost is expensive and the process time is long. Another problem is that the blocking characteristics from the moisture and oxygen are not perfect. Therefore, the encapsulation of the flexible OLED device is a still key technical issue for the successful market entry. In this study, we are to introduce an auxiliary sealing line between the two flexible substrates. The electrode lines were formed on the substrates which have a SiNx barrier coating layer. To induce the solid phase diffusion process between the SiNx layer and the electrode lines, the electrode materials were determined as Al-Si composition. Thermal energy was supplied for both the SiNx layer and Al-Si electrode lines within the furnace to induce the interfacial bonding through the solid phase diffusion of Si. We printed a test pattern for the edge of the flexible PET substrate of 3cm*3cm size. Experimental conditions such as heating temperature, heating time were optimized to get enough adhesion strength which was estimated through the competitive bending test. Finally, OLED devices with flexible PET substrate of 3cm*3cm size were manufactured to investigate the blocking characteristics as an encapsulation layer.

Keywords: barrier, encapsulation, OLED, solid phase diffusion

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1709 Locating the Davao Film Culture: An Exploration of the Relationship of Geography and the Cinema of a Regional City Center

Authors: Sarah Isabelle Torres

Abstract:

Using Lefebvre’s (1991) Spatial Triad, this study explores the relationship of geography and cinema and asks the question: how does geography shape the film culture of a regional city center located at the periphery of a country’s capital? This research aims to locate the contemporary film scene of the city in question, Davao City, Mindanao through contextualizing the politics and culture of its tri-people. This study shows that primarily because of local filmmakers' affection and sense of place, progressive films focusing on the tri-people and their struggles mainly due to issues on land have been born. To further understand the city’s film culture, this study maps the following areas: 1) filmmakers and cineastes, 2) films, 3) film festivals, 4) financial stakeholders, 5) institutions, and 6) screening places. From these, the researcher learned that although the local film community has established itself for decades, problems on audience, funding, and institutional support continue to persist. Aside from mapping, this study also explores Davao’s political, economic, and cultural position within the regional and the national arenas.

Keywords: cinema studies, Davao City, film culture, geography, Philippines, place, regional cinema, space

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1708 Efficiency and Reliability Analysis of SiC-Based and Si-Based DC-DC Buck Converters in Thin-Film PV Systems

Authors: Elaid Bouchetob, Bouchra Nadji

Abstract:

This research paper compares the efficiency and reliability (R(t)) of SiC-based and Si-based DC-DC buck converters in thin layer PV systems with an AI-based MPPT controller. Using Simplorer/Simulink simulations, the study assesses their performance under varying conditions. Results show that the SiC-based converter outperforms the Si-based one in efficiency and cost-effectiveness, especially in high temperature and low irradiance conditions. It also exhibits superior reliability, particularly at high temperature and voltage. Reliability calculation (R(t)) is analyzed to assess system performance over time. The SiC-based converter demonstrates better reliability, considering factors like component failure rates and system lifetime. The research focuses on the buck converter's role in charging a Lithium battery within the PV system. By combining the SiC-based converter and AI-based MPPT controller, higher charging efficiency, improved reliability, and cost-effectiveness are achieved. The SiC-based converter proves superior under challenging conditions, emphasizing its potential for optimizing PV system charging. These findings contribute insights into the efficiency, reliability, and reliability calculation of SiC-based and Si-based converters in PV systems. SiC technology's advantages, coupled with advanced control strategies, promote efficient and sustainable energy storage using Lithium batteries. The research supports PV system design and optimization for reliable renewable energy utilization.

Keywords: efficiency, reliability, artificial intelligence, sic device, thin layer, buck converter

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1707 Theoretical Study of Structural, Magnetic, and Magneto-Optical Properties of Ultrathin Films of Fe/Cu (001)

Authors: Mebarek Boukelkoul, Abdelhalim Haroun

Abstract:

By means of the first principle calculation, we have investigated the structural, magnetic and magneto-optical properties of the ultra-thin films of Fen/Cu(001) with (n=1, 2, 3). We adopted a relativistic approach using DFT theorem with local spin density approximation (LSDA). The electronic structure is performed within the framework of the Spin-Polarized Relativistic (SPR) Linear Muffin-Tin Orbitals (LMTO) with the Atomic Sphere Approximation (ASA) method. During the variational principle, the crystal wave function is expressed as a linear combination of the Bloch sums of the so-called relativistic muffin-tin orbitals centered on the atomic sites. The crystalline structure is calculated after an atomic relaxation process using the optimization of the total energy with respect to the atomic interplane distance. A body-centered tetragonal (BCT) pseudomorphic crystalline structure with a tetragonality ratio c/a larger than unity is found. The magnetic behaviour is characterized by an enhanced magnetic moment and a ferromagnetic interplane coupling. The polar magneto-optical Kerr effect spectra are given over a photon energy range extended to 15eV and the microscopic origin of the most interesting features are interpreted by interband transitions. Unlike thin layers, the anisotropy in the ultra-thin films is characterized by a perpendicular magnetization which is perpendicular to the film plane.

Keywords: ultrathin films, magnetism, magneto-optics, pseudomorphic structure

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1706 Marketing of Turkish Films by Crowdfunding

Authors: Nurdan Tumbek Tekeoglu

Abstract:

With rising importance in all over the world, crowdfunding has become a new financing and marketing method for film industry. Crowdfunding is a new practice in film industry for funding a film project by raising monetary contributions from a large group of people. By crowdfunding an estimate fund of 20 billion USD has been raised in 2015. Through the crowdfunding platforms not only the film makers, but also the entrepreneurs and nongovernmental organizations finance and market their projects. Among the prominent crowdfunding platforms in Turkey, we can list Crowdfon, Fonlabeni, Kickstarter, Indiego, Bi Ayda, and Fongogo platforms. In 2014 the Turkish film industry celebrated its 100th anniversary and reached its peak producing around 150-200 films a year reminding the brilliant years of Yesilcam period. In general feature films apply for crowdfunding. Until April 2015 more than 190 films applied for crowdfunding platforms. Crowdfunding has a promising future in Turkey, since donation traditions has an important place in Turkish culture traditionally. This paper is exploring the marketing of the crowdfunding platforms established in Turkey in order for the films meet their target groups during the pre-production period.

Keywords: crowdfunding, marketing of films, Turkey, Turkish film industry

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1705 Electromechanical Reliability of ITO/Ag/ITO Multilayer Coated Pet Substrate for Optoelectronic Application

Authors: D. W. Mohammed, J. Bowen, S. N. Kukureka

Abstract:

Successful design and fabrication of flexible devices for electrode components requires a low sheet resistance, high optical transmittance, high mechanical reliability. Indium tin oxide (ITO) film is currently the predominant transparent conductive oxide (TCO) film in potential applications such as flexible organic light- emitting diodes, flat-panel displays, solar cells, and thin film transistors (TFTs). However ITO films are too brittle and their resistivity is rather high in some cases compared with ITO/Ag/ ITO, and they cannot completely meet flexible optoelectronic device requirements. Therefore, in this work the mechanical properties of ITO /Ag/ITO multilayer film that deposited on Polyethylene terephthalate (PET) compared with the single layered ITO sample were investigated using bending fatigue, twisting fatigue and thermal cycling experiments. The electrical resistance was monitored during the application of mechanical and thermal loads to see the pattern of relationship between the load and the electrical continuity as a consequent of failure. Scanning electron microscopy and atomic force microscopy were used to provide surface characterization of the mechanically-tested samples. The effective embedment of the Ag layer between upper and lower ITO films led to metallic conductivity and superior flexibility to the single ITO electrode, due to the high failure strain of the ductile Ag layer. These results indicate that flexible ITO/Ag/ITO multilayer electrodes are a promising candidate for use as transparent conductor in flexible displays. They provided significantly reduced sheet resistance compared to ITO, and improved bending and twisting properties both as a function of radius, angle and thermal cycling.

Keywords: ITO/Ag/ITO multilayer, failure strain, mechanical properties, PET

Procedia PDF Downloads 275
1704 A Low-Cost Memristor Based on Hybrid Structures of Metal-Oxide Quantum Dots and Thin Films

Authors: Amir Shariffar, Haider Salman, Tanveer Siddique, Omar Manasreh

Abstract:

According to the recent studies on metal-oxide memristors, researchers tend to improve the stability, endurance, and uniformity of resistive switching (RS) behavior in memristors. Specifically, the main challenge is to prevent abrupt ruptures in the memristor’s filament during the RS process. To address this problem, we are proposing a low-cost hybrid structure of metal oxide quantum dots (QDs) and thin films to control the formation of filaments in memristors. We aim to use metal oxide quantum dots because of their unique electronic properties and quantum confinement, which may improve the resistive switching behavior. QDs have discrete energy spectra due to electron confinement in three-dimensional space. Because of Coulomb repulsion between electrons, only a few free electrons are contained in a quantum dot. This fact might guide the growth direction for the conducting filaments in the metal oxide memristor. As a result, it is expected that QDs can improve the endurance and uniformity of RS behavior in memristors. Moreover, we use a hybrid structure of intrinsic n-type quantum dots and p-type thin films to introduce a potential barrier at the junction that can smooth the transition between high and low resistance states. A bottom-up approach is used for fabricating the proposed memristor using different types of metal-oxide QDs and thin films. We synthesize QDs including, zinc oxide, molybdenum trioxide, and nickel oxide combined with spin-coated thin films of titanium dioxide, copper oxide, and hafnium dioxide. We employ fluorine-doped tin oxide (FTO) coated glass as the substrate for deposition and bottom electrode. Then, the active layer composed of one type of quantum dots, and the opposite type of thin films is spin-coated onto the FTO. Lastly, circular gold electrodes are deposited with a shadow mask by using electron-beam (e-beam) evaporation at room temperature. The fabricated devices are characterized using a probe station with a semiconductor parameter analyzer. The current-voltage (I-V) characterization is analyzed for each device to determine the conduction mechanism. We evaluate the memristor’s performance in terms of stability, endurance, and retention time to identify the optimal memristive structure. Finally, we assess the proposed hypothesis before we proceed to the optimization process for fabricating the memristor.

Keywords: memristor, quantum dot, resistive switching, thin film

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1703 Nano-Coating for Corrosion Prevention

Authors: M. J. Suriani, F. Mansor, W. Siti Maizurah, I. Nurizwani

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Silicon Carbide (SiC) is one of the Silicon-based materials, which get interested by the researcher. SiC is an emerging semiconductor material, which has received a great deal of attention due to their application in high frequency and high power systems. Although its superior characteristic for a semiconductor material, its outstanding mechanical properties, chemical inertness and thermal stability has gained important aspect for a surface coating for deployment in extreme environments. Very high frequency (VHF)-PECVD technique utilized to deposit nano ns-SiC film in which variation in chamber pressure, substrate temperature, RF power and precursor gases flow rate will be investigated in order to get a good quality of thin film coating. Characterization of the coating performed in order to study the surface morphology, structural information. This performance of coating evaluated through corrosion test to determine the effectiveness of the coating for corrosion prevention. Ns-SiC film expected to possess better corrosion resistance and optical properties, as well as preserving the metal from the marine environment. Through this research project, corrosion protection performance by applying coating will be explored to obtain a great corrosion prevention method to the shipping and oil and gas industry in Malaysia. Besides, the cost of repair and maintenance spending by the government of Malaysia can be reduced through practicing this method.

Keywords: composite materials, marine corrosion, nano-composite, nano structure–coating

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1702 Presence and Absence: The Use of Photographs in Paris, Texas

Authors: Yi-Ting Wang, Wen-Shu Lai

Abstract:

The subject of this paper is the photography in the 1983 film Paris, Texas, directed by Wim Wenders. Wenders is well known as a film director as well as a photographer. We have found that photography is shown as a photographic element in many of his films. Some of these photographs serve as details within the films, while others play important roles that are relevant to the story. This paper aims to consider photographs in film as a specific type of text, which is the output of both still photography and the film itself. In the film Paris, Texas, three sets of important photographs appear whose symbolic meanings are as dialectical as their text types. The relationship between the existence of these photos and the storyline is both dependent and isolated. The film’s images fly by and progress into other images, while the photos in the film serve a unique narrative function by stopping the continuously flowing images thus provide the viewer a space for imagination and contemplation. They are more than just artistic forms; they also contained multiple meanings. The photographs in Paris, Texas play the role of both presence and absence according to their shifting meanings. There are references to their presence: photographs exist between film time and narrative time, so in terms of the interaction between the characters in the film, photographs are a common symbol of the beginning and end of the characters’ journeys. In terms of the audience, the film’s photographs are a link in the viewing frame structure, through which the creative motivation of the film director can be explored. Photographs also point to the absence of certain objects: the scenes in the photos represent an imaginary map of emotion. The town of Paris, Texas is therefore isolated from the physical presence of the photograph, and is far more abstract than the reality in the film. This paper embraces the ambiguous nature of photography and demonstrates its presence and absence in film with regard to the meaning of text. However, it is worth reflecting that the temporary nature of the interpretation of the film’s photographs is far greater than any other type of photographic text: the characteristics of the text cause the interpretation results to change along with the variations in the interpretation process, which makes their meaning a dynamic process. The photographs’ presence or absence in the context of Paris, Texas also demonstrates the presence and absence of the creator, time, the truth, and the imagination. The film becomes more complete as a result of the revelation of the photographs, while the intertextual connection between these two forms simultaneously provides multiple possibilities for the interpretation of the photographs in the film.

Keywords: film, Paris, Texas, photography, Wim Wenders

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1701 Design and Modelling of Ge/GaAs Hetero-structure Bipolar Transistor

Authors: Samson Mil'shtein, Dhawal N. Asthana

Abstract:

The presented heterostructure n-p-n bipolar transistor is comprised of Ge/GaAs heterojunctions consisting of 0.15µm thick emitter and 0.65µm collector junctions. High diffusivity of carriers in GaAs base was major motivation of current design. We avoided grading of the base which is common in heterojunction bipolar transistors, in order to keep the electron diffusivity as high as possible. The electrons injected into the 0.25µm thick p-type GaAs base with not very high doping (1017cm-3). The designed HBT enables cut off frequency on the order of 150GHz. The Ge/GaAs heterojunctions presented in our paper have proved to work better than comparable HBTs having GaAs bases and emitter/collector junctions made, for example, of AlGaAs/GaAs or other III-V compound semiconductors. The difference in lattice constants between Ge and GaAs is less than 2%. Therefore, there is no need of transition layers between Ge emitter and GaAs base. Significant difference in energy gap of these two materials presents new scope for improving performance of the emitter. With the complete structure being modelled and simulated using TCAD SILVACO, the collector/ emitter offset voltage of the device has been limited to a reasonable value of 63 millivolts by the dint of low energy band gap value associated with Ge emitter. The efficiency of the emitter in our HBT is 86%. Use of Germanium in the emitter and collector regions presents new opportunities for integration of this vertical device structure into silicon substrate.

Keywords: Germanium, Gallium Arsenide, heterojunction bipolar transistor, high cut-off frequency

Procedia PDF Downloads 392