Search results for: low power CMOS design

Authors: Jörg Lenhardt, Wolfram Schiffmann, Jörg Keller

Abstract:

While the feature sizes of recent Complementary Metal Oxid Semiconductor (CMOS) devices decrease the influence of static power prevails their energy consumption. Thus, power savings that benefit from Dynamic Frequency and Voltage Scaling (DVFS) are diminishing and temporal shutdown of cores or other microchip components become more worthwhile. A consequence of powering off unused parts of a chip is that the relative difference between idle and fully loaded power consumption is increased. That means, future chips and whole server systems gain more power saving potential through power-aware load balancing, whereas in former times this power saving approach had only limited effect, and thus, was not widely adopted. While powering off complete servers was used to save energy, it will be superfluous in many cases when cores can be powered down. An important advantage that comes with that is a largely reduced time to respond to increased computational demand. We include the above developments in a server power model and quantify the advantage. Our conclusion is that strategies from datacenters when to power off server systems might be used in the future on core level, while load balancing mechanisms previously used at core level might be used in the future at server level.

Keywords: power efficiency, static power consumption, dynamic power consumption, CMOS

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Authors: Sina Mahdavi, Faeze Noruzpur, Aysuda Noruzpur

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This paper proposes a high linear, low power and wideband Variable Gain Amplifier (VGA) with a direct current (DC) gain range of -10.2dB to 60.7dB. By applying the proposed idea to the folded cascade amplifier, it is possible to achieve a 71dB DC gain, 35MHz (-3dB) bandwidth, accompanied by high linearity and low sensitivity as well. It is noteworthy that the proposed idea can be able to apply on every differential amplifier, too. Moreover, the total power consumption and unity gain bandwidth of the proposed VGA is 1.41mW with a power supply of 1.8 volts and 4.37GHz, respectively, and 0.8pF capacitor load is applied at the output nodes of the amplifier. Furthermore, the proposed structure is simulated in whole process corners and different temperatures in the region of -60 to +90 ºC. Simulations are performed for all corner conditions by HSPICE using the BSIM3 model of the 180nm CMOS technology and MATLAB software.

Keywords: variable gain amplifier, low power, low voltage, folded cascade, amplifier, DC gain

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Authors: M. Yousefi, N. Nasirzadeh

Abstract:

In this paper, dynamic comparator structure employing two methods for power consumption reduction with applications in low-power high-speed analog-to-digital converters have been presented. The proposed comparator has low consumption thanks to power reduction methods. They have the ability for offset adjustment. The comparator consumes 14.3 μW at 100 MHz which is equal to 11.8 fJ. The comparator has been designed and simulated in 180 nm CMOS. Layouts occupy 210 μm².

Keywords: efficiency, comparator, power, low

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Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet

Abstract:

This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce V_th of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.

Keywords: energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm

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Authors: Mahdiar Hosseighadiry, Farnaz Fotovatikhah, Razali Ismail, Mohsen Khaledian, Mehdi Saeidemanesh

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In this paper, a new low-power high-performance full adder is presented based on a new design method. The proposed method relies on pass gate design and provides full-swing circuits with minimum number of transistors. The method has been applied on SUM, COUT and XOR-XNOR modules resulting on rail-to-rail intermediate and output signals with no feedback transistors. The presented full adder cell has been simulated in 45 and 32 nm CMOS technologies using HSPICE considering parasitic capacitance and compared to several well-known designs from literature. In addition, the proposed cell has been extensively evaluated with different output loads, supply voltages, temperatures, threshold voltages, and operating frequencies. Results show that it functions properly under all mentioned conditions and exhibits less PDP compared to other design styles.

Keywords: full adders, low-power, high-performance, VLSI design

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Authors: Muhaned Zaidi, Ian Grout, Abu Khari bin A’ain

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In this paper, a two-stage op-amp design is considered using both Miller and negative Miller compensation techniques. The first op-amp design uses Miller compensation around the second amplification stage, whilst the second op-amp design uses negative Miller compensation around the first stage and Miller compensation around the second amplification stage. The aims of this work were to compare the gain and phase margins obtained using the different compensation techniques and identify the ability to choose either compensation technique based on a particular set of design requirements. The two op-amp designs created are based on the same two-stage rail-to-rail output CMOS op-amp architecture where the first stage of the op-amp consists of differential input and cascode circuits, and the second stage is a class AB amplifier. The op-amps have been designed using a 0.35mm CMOS fabrication process.

Keywords: op-amp, rail-to-rail output, Miller compensation, Negative Miller capacitance

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Authors: Yo-Sheng Lin, Chien-Chin Wang, Yun-Wen Lin, Chien-Yo Lee

Abstract:

A wide band power amplifier (PA) for 60 GHz and 77 GHz direct-conversion transceiver using standard 90 nm CMOS technology is reported. The PA comprises a cascode input stage with a wide band T-type input-matching network and inductive interconnection and load, followed by a common-source (CS) gain stage and a CS output stage. To increase the saturated output power (PSAT) and power-added efficiency (PAE), the output stage adopts a two-way power dividing and combining architecture. Instead of the area-consumed Wilkinson power divider and combiner, miniature low-loss transmission-line inductors are used at the input and output terminals of each of the output stages for wide band input and output impedance matching to 100 ohm. This in turn results in further PSAT and PAE enhancement. The PA consumes 92.2 mW and achieves maximum power gain (S21) of 23.3 dB at 56 GHz, and S21 of 21.7 dB and 14 dB, respectively, at 60 GHz and 77 GHz. In addition, the PA achieves excellent saturated output power (PSAT) of 10.6 dB and maximum power added efficiency (PAE) of 12.3% at 60 GHz. At 77 GHz, the PA achieves excellent PSAT of 10.4 dB and maximum PAE of 6%. These results demonstrate the proposed wide band PA architecture is very promising for 60 GHz wireless personal local network (WPAN) and 77 GHz automobile radar systems.

Keywords: 60 GHz, 77 GHz, PA, WPAN, automotive radar

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Authors: Guo-Ming Sung, Ramavath Naga Raju Naik

Abstract:

This paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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Authors: F. Rarbi, D. Dzahini, W. Uhring

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In this paper, a dynamic and power efficient 8-bit and 100-MSPS Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) is presented. The circuit uses a non-differential capacitive Digital-to-Analog (DAC) architecture segmented by 2. The prototype is produced in a commercial 65-nm 1P7M CMOS technology with 1.2-V supply voltage. The size of the core ADC is 208.6 x 103.6 µm². The post-layout noise simulation results feature a SNR of 46.9 dB at Nyquist frequency, which means an effective number of bit (ENOB) of 7.5-b. The total power consumption of this SAR ADC is only 1.55 mW at 100-MSPS. It achieves then a figure of merit of 85.6 fJ/step.

Keywords: CMOS analog to digital converter, dynamic comparator, image sensor application, successive approximation register

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Authors: Yo-Sheng Lin, Jen-How Lee, Chien-Chin Wang

Abstract:

A 60-GHz receiver front-end using standard 90-nm CMOS technology is reported. The receiver front-end comprises a wideband low-noise amplifier (LNA), and a double-balanced Gilbert cell mixer with a current-reused RF single-to-differential (STD) converter, an LO Marchand balun and a baseband amplifier. The receiver front-end consumes 34.4 mW and achieves LO-RF isolation of 60.7 dB, LO-IF isolation of 45.3 dB and RF-IF isolation of 41.9 dB at RF of 60 GHz and LO of 59.9 GHz. At IF of 0.1 GHz, the receiver front-end achieves maximum conversion gain (CG) of 26.1 dB at RF of 64 GHz and CG of 25.2 dB at RF of 60 GHz. The corresponding 3-dB bandwidth of RF is 7.3 GHz (58.4 GHz to 65.7 GHz). The measured minimum noise figure was 5.6 dB at 64 GHz, one of the best results ever reported for a 60 GHz CMOS receiver front-end. In addition, the measured input 1-dB compression point and input third-order inter-modulation point are -33.1 dBm and -23.3 dBm, respectively, at 60 GHz. These results demonstrate the proposed receiver front-end architecture is very promising for 60 GHz direct-conversion transceiver applications.

Keywords: CMOS, 60 GHz, direct-conversion transceiver, LNA, down-conversion mixer, marchand balun, current-reused

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Authors: Jingjing Lan, Jun Yu, Muthukumaraswamy Annamalai Arasu

Abstract:

This paper presents a digital non-linear pulse-width modulation (PWM) controller in a high-voltage (HV) buck-boost DC-DC converter for the piezoelectric transducer of the down-hole acoustic telemetry system. The proposed design controls the generation of output signal with voltage higher than the supply voltage and is targeted to work under high temperature. To minimize the power consumption and silicon area, a simple and efficient design scheme is employed to develop the PWM controller. The proposed PWM controller consists of serial to parallel (S2P) converter, data assign block, a mode and duty cycle controller (MDC), linearly PWM (LPWM) and noise shaper, pulse generator and clock generator. To improve the reliability of circuit operation at higher temperature, this design is fabricated with the 1.0-μm silicon-on-insulator (SOI) CMOS process. The implementation results validated that the proposed design has the advantages of smaller size, lower power consumption and robust thermal stability.

Keywords: DC-DC power conversion, digital control, high temperatures, pulse-width modulation

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Authors: Zina Saheb, Ezz El-Masry

Abstract:

As CMOS technology scaling down, Silicon oxide thickness (SiO2) become very thin (few Nano meters). When SiO2 is less than 3nm, gate direct tunneling (DT) leakage current becomes a dormant problem that impacts the transistor performance. Floating gate MOSFET (FGMOSFET) has been used in many low-voltage and low-power applications. Most of the available simulation models of FGMOSFET for analog circuit design does not account for gate DT current and there is no accurate analysis for the gate DT. It is a crucial to use an accurate mode in order to get a realistic simulation result that account for that DT impact on FGMOSFET performance effectively.

Keywords: CMOS transistor, direct-tunneling current, floating-gate, gate-leakage current, simulation model

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Authors: Jin Sup Kim, Min Seo

Abstract:

An improved cross-shaped hall plate with high sensitivity is described in this paper. Among different geometries that have been simulated and measured using Helmholtz coil. The paper describes the physical hall plate design and implementation in a 0.18-µm CMOS technology. In this paper, the biasing is a constant voltage mode. In the voltage mode, magnetic field is converted into an output voltage. The output voltage is typically in the order of micro- to millivolt and therefore, it must be amplified before being transmitted to the outside world. The study, design and performance optimization of hall plate has been carried out with the COMSOL Multiphysics. It is used to estimate the voltage distribution in the hall plate with and without magnetic field and to optimize the geometry. The simulation uses the nominal bias current of 1mA. The applied magnetic field is in the range from 0 mT to 20 mT. Measured results of the one structure over the 10 available samples show for the best sensitivity of 2.5 %/T at 20mT.

Keywords: cross-shaped hall plate, sensitivity, CMOS technology, Helmholtz coil

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Authors: Hafez Fouad

Abstract:

Telemedicine applications have very low voltage which required High Precision Rectifier Design with high Sensitivity to operate at minimum input Voltage. In this work, we targeted 0.2V input voltage using 65 nm CMOS rectifier for Energy Harvesting Telemedicine application. The proposed rectifier which designed at 2.4GHz using two-stage structure found to perform in a better case where minimum operation voltage is lower than previous published paper and the rectifier can work at a wide range of low input voltage amplitude. The Performance Summary of Full-wave fully gate cross-coupled rectifiers (FWFR) CMOS Rectifier at F = 2.4 GHz: The minimum and maximum output voltages generated using an input voltage amplitude of 2 V are 490.9 mV and 1.997 V, maximum VCE = 99.85 % and maximum PCE = 46.86 %. The Performance Summary of Differential drive CMOS rectifier with external bootstrapping circuit rectifier at F = 2.4 GHz: The minimum and maximum output voltages generated using an input voltage amplitude of 2V are 265.5 mV (0.265V) and 1.467 V respectively, maximum VCE = 93.9 % and maximum PCE= 15.8 %.

Keywords: energy harvesting, embedded system, IoT telemedicine system, threshold voltage minimization, differential drive cmos rectifier, full-wave fully gate cross-coupled rectifiers CMOS rectifier

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Authors: Mohsen Bagheri, Ahmad Afifi

Abstract:

This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on instrumentation amplifier and it is useful for reducing offset in Wheatstone bridge. The obtained gain is 645 with 1 μv/°c equivalent drift and 1.58 mw power consumption. A Schmitt trigger and multiplexer circuit control output node. A high speed counter is designed in this work. The proposed circuit is designed and simulated in 0.18 μm CMOS technology with 1.8 v power supply.

Keywords: piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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Authors: J. S. Kim, N. P. Hong

Abstract:

In this paper, a CMOS vector modulator designed for wireless backhaul system based on 802.11ac is presented. A poly phase filter and sign select switches yield two orthogonal signal paths. Two variable gain amplifiers with strongly reduced phase shift of only ±5 ° are used to weight these paths. It has a phase control range of 360 ° and a gain range of -10 dB to 10 dB. The current drawn from a 1.2 V supply amounts 20.4 mA. Using a 0.13 mm technology, the chip die area amounts 1.47x0.75 mm².

Keywords: CMOS, phase shifter, backhaul, 802.11ac

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Authors: Wenjuan Du

Abstract:

The phase compensation method was proposed based on the concept of the damping torque analysis (DTA). It is a method for the design of a PSS (power system stabilizer) to suppress local-mode power oscillations in a single-machine infinite-bus power system. This paper presents the application of the phase compensation method for the design of a PSS in a multi-machine power system. The application is achieved by examining the direct damping contribution of the stabilizer to the power oscillations. By using linearized equal area criterion, a theoretical proof to the application for the PSS design is presented. Hence PSS design in the paper is an example of stable tending control by localized method.

Keywords: phase compensation method, power system small-signal stability, power system stabilizer

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Authors: Kala Bharathan, R. Seshasayanan

Abstract:

In this paper, a 1-bit Embedded Logic Full Adder (EFA) circuit in transistor level is proposed, which reduces logic complexity, gives low power and high speed. The design is further extended till 64 bits. To evaluate the performance of EFA, a 16, 32, 64-bit both Linear and Square root Carry Select Adder/Subtractor (CSLAS) Structure is also proposed. Realistic testing of proposed circuits is done on 8 X 8 Modified Booth multiplier and comparison in terms of power and delay is done. The EFA is implemented for different multiplier architectures for performance parameter comparison. Overall delay for CSLAS is reduced to 78% when compared to conventional one. The circuit implementations are done on TSMC 28nm CMOS technology using Cadence Virtuoso tool. The EFA has power savings of up to 14% when compared to the conventional adder. The present implementation was found to offer significant improvement in terms of power and speed in comparison to other full adder circuits.

Keywords: embedded logic, full adder, pdp, xor gate

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Authors: Jun Yu, Yat-Hei Lam, Boris Grinberg, Kevin Chai Tshun Chuan

Abstract:

This paper presents a 5-V to 30-V current-mode boost converter for powering the drive circuit of a micro-electro-mechanical sensor. The design of a transconductance amplifier and an integrated current sensing circuit are presented. In addition, essential building blocks for power-on protection such as a soft-start and clamp block and supply and clock ready block are discussed in details. The chip is fabricated in a 0.18-μm CMOS process. Measurement results show that the soft-start and clamp block can effectively limit the inrush current during startup and protect the boost converter from startup failure.

Keywords: boost converter, current sensing, power-on protection, step-up converter, soft-start

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Authors: Agord M. Pinto Jr., Yuzo Iano, Leandro T. Manera, Raphael R. N. Souza

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This paper describes an optimization tool-based design strategy for a Current Mode Logic CML divide-by-2 circuit. Representing a building block for output frequency generation in a RFID protocol based-frequency synthesizer, the circuit was designed to minimize the power consumption for driving of multiple loads with unbalancing (at transceiver level). Implemented with XFAB XC08 180 nm technology, the circuit was optimized through MunEDA WiCkeD tool at Cadence Virtuoso Analog Design Environment ADE.

Keywords: divide-by-2 circuit, CMOS technology, PLL phase locked-loop, optimization tool, CML current mode logic, RF transceiver

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Authors: Hesham Shaalan

Abstract:

Senior design projects teach students many important skills. One of the major goals is to prepare students to apply effective problem-solving techniques to a problem that represents a real-world situation. This includes the ability to define the problem, compare alternative solutions, identify the best solution, and design the system. This paper describes the design of a shipboard power plant as a senior project in the Marine Engineering program at the U.S. Merchant Marine Academy. The design project was supervised by faculty members who guided a multidisciplinary group of seniors. The research project was sponsored by the Office of Naval Research. Each group of seniors focused on one of the main design aspects of the project, including the electric power system, nuclear power plant, ship hull design, and economics.

Keywords: senior design project, shipboard power system, engineering education, marine engineering

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Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E, and F are the main techniques for realizing power amplifiers. An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), gallium nitride (GaN), Agilent’s Advanced Design System (ADS), lumped elements

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Authors: Kittipong Tripetch

Abstract:

This paper proposes for the first time symbolic formula of the power spectrum of cross couple oscillator and its modified circuit. Many principle existed to derived power spectrum in microwave textbook such as impedance, admittance parameters, ABCD, H parameters, etc. It can be compared by graph of power spectrum which methodology is the best from the point of view of practical measurement setup such as condition of impedance parameter which used superposition of current to derived (its current injection of the other port of the circuit is zero, which is impossible in reality). Four Graphs of impedance parameters of cross couple oscillator is proposed. After that four graphs of Scattering parameters of cross couple oscillator will be shown.

Keywords: optimization, power spectrum, impedance parameters, scattering parameter

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Authors: A. Sardi, J. Zbitou, A. Errkik, L. El Abdellaoui, A. Tajmouati, M. Latrach

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This paper presents analysis and design of a wideband Wilkinson power divider for wireless applications. The design is accomplished by transforming the lengths and impedances of the quarter wavelength sections of the conventional Wilkinson power divider into U-shaped sections. The designed power divider is simulated by using ADS Agilent technologies and CST microwave studio software. It is shown that the proposed power divider has simple topology and good performances in terms of insertion loss, port matching and isolation at all operating frequencies (1.8 GHz, 2.45 GHz and 3.55 GHz).

Keywords: ADS agilent technologies, CST microwave studio, microstrip, wideband, wilkinson power divider

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Authors: Naheem Olakunle Adesina

Abstract:

The memristor is considered as one of the promising candidates for mamoelectronic engineering and applications. Owing to its high compatibility with CMOS, nanoscale size, and low power consumption, memristor has been employed in the design of commonly used circuits such as phase-locked loop (PLL). In this paper, we designed a memristor-based loop filter (LF) together with other components of PLL. Following this, we evaluated the noise-rejection feature of loop filter by comparing the noise levels of input and output signals of the filter. Our SPICE simulation results showed that memristor behaves like a linear resistor at high frequencies. The result also showed that loop filter blocks the high-frequency components from phase frequency detector so as to provide a stable control voltage to the voltage controlled oscillator (VCO). In addition, we examined the effects of temperature on the performance of the designed phase locked loop circuit. A critical temperature, where there is frequency drift of VCO as a result of variations in control voltage, is identified. In conclusion, the memristor is a suitable choice for nanoelectronic systems owing to a small area, low power consumption, dense nature, high switching speed, and endurance. The proposed memristor-based loop filter, together with other components of the phase locked loop, can be designed using memristive emulator and EDA tools in current CMOS technology and simulated.

Keywords: Fast Fourier Transform, hysteresis curve, loop filter, memristor, noise, phase locked loop, voltage controlled oscillator

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Authors: Madina Hamiane

Abstract:

Modelling and simulation of an analogy function generator is presented based on a polynomial expansion model. The proposed function generator model is based on a 10th order polynomial approximation of any of the required functions. The polynomial approximations of these functions can then be implemented using basic CMOS circuit blocks. In this paper, a circuit model is proposed that can simultaneously generate many different mathematical functions. The circuit model is designed and simulated with HSPICE and its performance is demonstrated through the simulation of a number of non-linear functions.

Keywords: modelling and simulation, analog function generator, polynomial approximation, CMOS transistors

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Authors: K. Echchakhaoui, E. Abdelmounim, J. Zbitou, H. Bennis, N. Ababssi, M. Latrach

Abstract:

In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate this circuit with a threshold input power level of 0 dBm until a maximum input power of 30 dBm.

Keywords: Limiter, microstrip, zero-biais, ADS

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Authors: Ch. Ashok Babu, J. V. R. Ravindra, K. Lalkishore

Abstract:

Power has became a burning issue in modern VLSI design. As the technology advances especially below 45nm, technology of leakage power became a big problem apart of the dynamic power. This paper presents a full adder with novel PMOS and NMOS which consume less power compare to conventional full adder, DTMOS full adder. This paper shows different types of adders and their power consumption, area, and delay. All the experiments have been carried out using Cadence® Virtuoso® design lay out editor which shows power consumption of different types of adders.

Keywords: average power, leakage power, delay, DTMOS, PDP

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Authors: Ahmed Z. Gabr, Ahmed A. Helal, Hussein E. Said

Abstract:

With the incessant increase of power systems capacity and voltage grade, the safety of grounding grid becomes more and more prominent. In this paper, the designing substation grounding grid is presented by means of genetic algorithm (GA). This approach purposes to control the grounding cost of the power system with the aid of controlling grounding rod number and conductor lengths under the same safety limitations. The proposed technique is used for the design of the substation grounding grid in Khalda Petroleum Company “El-Qasr” power plant and the design was simulated by using CYMGRD software for results verification. The result of the design is highly complying with IEEE 80-2000 standard requirements.

Keywords: genetic algorithm, optimum grounding grid design, power system analysis, power system protection, single layer model, substation

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Authors: Syed Islam, Yiyun Huang, Sebastian Magierowski, Ebrahim Ghafar-Zadeh

Abstract:

This paper presents system level CMOS solid-state nanopore techniques enhancement for speedup next generation molecular recording and high throughput channels. This discussion also considers optimum number of base-pair (bp) measurements through channel as an important role to enhance potential read accuracy. Effective power consumption estimation offered suitable rangeof multi-channel configuration. Nanopore bp extraction model in statistical method could contribute higher read accuracy with longer read-length (200 < read-length). Nanopore ionic current switching with Time Multiplexing (TM) based multichannel readout system contributed hardware savings.

Keywords: DNA, nanopore, amplifier, ADC, multichannel

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