Search results for: differential drive cmos rectifier
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2439

Search results for: differential drive cmos rectifier

2439 High Precision 65nm CMOS Rectifier for Energy Harvesting using Threshold Voltage Minimization in Telemedicine Embedded System

Authors: Hafez Fouad

Abstract:

Telemedicine applications have very low voltage which required High Precision Rectifier Design with high Sensitivity to operate at minimum input Voltage. In this work, we targeted 0.2V input voltage using 65 nm CMOS rectifier for Energy Harvesting Telemedicine application. The proposed rectifier which designed at 2.4GHz using two-stage structure found to perform in a better case where minimum operation voltage is lower than previous published paper and the rectifier can work at a wide range of low input voltage amplitude. The Performance Summary of Full-wave fully gate cross-coupled rectifiers (FWFR) CMOS Rectifier at F = 2.4 GHz: The minimum and maximum output voltages generated using an input voltage amplitude of 2 V are 490.9 mV and 1.997 V, maximum VCE = 99.85 % and maximum PCE = 46.86 %. The Performance Summary of Differential drive CMOS rectifier with external bootstrapping circuit rectifier at F = 2.4 GHz: The minimum and maximum output voltages generated using an input voltage amplitude of 2V are 265.5 mV (0.265V) and 1.467 V respectively, maximum VCE = 93.9 % and maximum PCE= 15.8 %.

Keywords: energy harvesting, embedded system, IoT telemedicine system, threshold voltage minimization, differential drive cmos rectifier, full-wave fully gate cross-coupled rectifiers CMOS rectifier

Procedia PDF Downloads 115
2438 Analysis and Design of Simultaneous Dual Band Harvesting System with Enhanced Efficiency

Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet

Abstract:

This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce Vth of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.

Keywords: energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm

Procedia PDF Downloads 370
2437 Research on Control Strategy of Differential Drive Assisted Steering of Distributed Drive Electric Vehicle

Authors: J. Liu, Z. P. Yu, L. Xiong, Y. Feng, J. He

Abstract:

According to the independence, accuracy and controllability of the driving/braking torque of the distributed drive electric vehicle, a control strategy of differential drive assisted steering was designed. Firstly, the assisted curve under different speed and steering wheel torque was developed and the differential torques were distributed to the right and left front wheels. Then the steering return ability assisted control algorithm was designed. At last, the joint simulation was conducted by CarSim/Simulink. The result indicated: the differential drive assisted steering algorithm could provide enough steering drive-assisted under low speed and improve the steering portability. Along with the increase of the speed, the provided steering drive-assisted decreased. With the control algorithm, the steering stiffness of the steering system increased along with the increase of the speed, which ensures the driver’s road feeling. The control algorithm of differential drive assisted steering could avoid the understeer under low speed effectively.

Keywords: differential assisted steering, control strategy, distributed drive electric vehicle, driving/braking torque

Procedia PDF Downloads 449
2436 Inverter Based Gain-Boosting Fully Differential CMOS Amplifier

Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter

Procedia PDF Downloads 264
2435 Performance Analysis of 180 nm Low Voltage Low Power CMOS OTA for High Frequency Application

Authors: D. J. Dahigaonkar, D. G. Wakde

Abstract:

The performance analysis of low voltage low power CMOS OTA is presented in this paper. The differential input single output OTA is simulated in 180nm CMOS process technology. The simulation results indicate high bandwidth of the order of 7.04GHz with 0.766mW power consumption and transconductance of -71.20dB. The total harmonic distortion for 100mV input at a frequency of 1MHz is found to be 2.3603%. In addition to this, to establish comparative analysis of designed OTA and analyze effect of technology scaling, the differential input single output OTA is further simulated using 350nm CMOS process technology and the comparative analysis is presented in this paper.

Keywords: Operational Transconductance Amplifier, Total Harmonic Distortions, low voltage/low power, power dissipation

Procedia PDF Downloads 373
2434 A Fault-Tolerant Full Adder in Double Pass CMOS Transistor

Authors: Abdelmonaem Ayachi, Belgacem Hamdi

Abstract:

This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology.

Keywords: digital electronics, integrated circuits, full adder, 32nm CMOS tehnology, double pass transistor technology, fault toleance, self-checking

Procedia PDF Downloads 312
2433 Intelligent Path Tracking Hybrid Fuzzy Controller for a Unicycle-Type Differential Drive Robot

Authors: Abdullah M. Almeshal, Mohammad R. Alenezi, Muhammad Moaz

Abstract:

In this paper, we discuss the performance of applying hybrid spiral dynamic bacterial chemotaxis (HSDBC) optimisation algorithm on an intelligent controller for a differential drive robot. A unicycle class of differential drive robot is utilised to serve as a basis application to evaluate the performance of the HSDBC algorithm. A hybrid fuzzy logic controller is developed and implemented for the unicycle robot to follow a predefined trajectory. Trajectories of various frictional profiles and levels were simulated to evaluate the performance of the robot at different operating conditions. Controller gains and scaling factors were optimised using HSDBC and the performance is evaluated in comparison to previously adopted optimisation algorithms. The HSDBC has proven its feasibility in achieving a faster convergence toward the optimal gains and resulted in a superior performance.

Keywords: differential drive robot, hybrid fuzzy controller, optimization, path tracking, unicycle robot

Procedia PDF Downloads 434
2432 Bridgeless Boost Power Factor Correction Rectifier with Hold-Up Time Extension Circuit

Authors: Chih-Chiang Hua, Yi-Hsiung Fang, Yuan-Jhen Siao

Abstract:

A bridgeless boost (BLB) power factor correction (PFC) rectifier with hold-up time extension circuit is proposed in this paper. A full bridge rectifier is widely used in the front end of the ac/dc converter. Since the shortcomings of the full bridge rectifier, the bridgeless rectifier is developed. A BLB rectifier topology is utilized with the hold-up time extension circuit. Unlike the traditional hold-up time extension circuit, the proposed extension scheme uses fewer active switches to achieve a longer hold-up time. Simulation results are presented to verify the converter performance.

Keywords: bridgeless boost (BLB), boost converter, power factor correction (PFC), hold-up time

Procedia PDF Downloads 381
2431 Dual-Rail Logic Unit in Double Pass Transistor Logic

Authors: Hamdi Belgacem, Fradi Aymen

Abstract:

In this paper we present a low power, low cost differential logic unit (LU). The proposed LU receives dual-rail inputs and generates dual-rail outputs. The proposed circuit can be used in Arithmetic and Logic Units (ALU) of processor. It can be also dedicated for self-checking applications based on dual duplication code. Four logic functions as well as their inverses are implemented within a single Logic Unit. The hardware overhead for the implementation of the proposed LU is lower than the hardware overhead required for standard LU implemented with standard CMOS logic style. This new implementation is attractive as fewer transistors are required to implement important logic functions. The proposed differential logic unit can perform 8 Boolean logical operations by using only 16 transistors. Spice simulations using a 32 nm technology was utilized to evaluate the performance of the proposed circuit and to prove its acceptable electrical behaviour.

Keywords: differential logic unit, double pass transistor logic, low power CMOS design, low cost CMOS design

Procedia PDF Downloads 423
2430 Symbolic Analysis of Input Impedance of CMOS Floating Active Inductors with Application in Fully Differential Bandpass Amplifier

Authors: Kittipong Tripetch

Abstract:

This paper proposes studies of input impedance of two types of the CMOS active inductor. It derives two input impedance formulas. The first formula is the input impedance of a grounded active inductor. The second formula is an input impedance of floating active inductor. After that, these formulas can be used to simulate magnitude and phase response of input impedance as a function of current consumption with MATLAB. Common mode rejection ratio (CMRR) of a fully differential bandpass amplifier is derived based on superposition principle. CMRR as a function of input frequency is plotted as a function of current consumption

Keywords: grounded active inductor, floating active inductor, fully differential bandpass amplifier

Procedia PDF Downloads 393
2429 An Active Rectifier with Time-Domain Delay Compensation to Enhance the Power Conversion Efficiency

Authors: Shao-Ku Kao

Abstract:

This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: wireless power transfer, active diode, delay compensation, time to voltage converter, PCE

Procedia PDF Downloads 244
2428 Design of a Rectifier with Enhanced Efficiency and a High-gain Antenna for Integrated and Compact-size Rectenna Circuit

Authors: Rawaa Maher, Ahmed Allam, Haruichi Kanaya, Adel B. Abdelrahman

Abstract:

In this paper, a compact, high-efficiency integrated rectenna is presented to operate in the 2.45 GHz band. A comparison between two rectifier topologies is performed to verify the benefits of removing the matching network from the rectifier. A rectifier high conversion efficiency of 74.1% is achieved. To complete the rectenna system, a novel omnidirectional antenna with high gain (3.72 dB) and compact size (25 mm * 29 mm) is designed and fabricated. The same antenna is used with a reflector for raising the gain to nearly 8.3 dB. The simulation and measurement results of the antenna are in good agreement.

Keywords: internet of things, integrated rectenna, rectenna, RF energy harvesting, wireless sensor networks(WSN)

Procedia PDF Downloads 149
2427 Soft Robotic Exoskeletal Glove with Single Motor-Driven Tendon-Based Differential Drive

Authors: M. Naveed Akhter, Jawad Aslam, Omer Gillani

Abstract:

To aid and rehabilitate increasing number of patients suffering from spinal cord injury (SCI) and stroke, a lightweight, wearable, and 3D printable exoskeletal glove has been developed. Unlike previously developed metal or fabric-based exoskeletons, this research presents the development of soft exoskeletal glove made of thermoplastic polyurethane (TPU). The drive mechanism consists of a single motor-driven antagonistic tendon to perform extension or flexion of middle and index finger. The tendon-based differential drive has been incorporated to allow for grasping of irregularly shaped objects. The design features easy 3D-printability with TPU without a need for supports. The overall weight of the glove and the actuation unit is approximately 500g. Performance of the glove was tested on a custom test-bench with integrated load cells, and the grip strength was tested to be around 30N per finger while grasping objects of irregular shape.

Keywords: 3D printable, differential drive, exoskeletal glove, rehabilitation, single motor driven

Procedia PDF Downloads 109
2426 Design and Implementation of a 94 GHz CMOS Double-Balanced Up-Conversion Mixer for 94 GHz Imaging Radar Sensors

Authors: Yo-Sheng Lin, Run-Chi Liu, Chien-Chu Ji, Chih-Chung Chen, Chien-Chin Wang

Abstract:

A W-band double-balanced mixer for direct up-conversion using standard 90 nm CMOS technology is reported. The mixer comprises an enhanced double-balanced Gilbert cell with PMOS negative resistance compensation for conversion gain (CG) enhancement and current injection for power consumption reduction and linearity improvement, a Marchand balun for converting the single LO input signal to differential signal, another Marchand balun for converting the differential RF output signal to single signal, and an output buffer amplifier for loading effect suppression, power consumption reduction and CG enhancement. The mixer consumes low power of 6.9 mW and achieves LO-port input reflection coefficient of -17.8~ -38.7 dB and RF-port input reflection coefficient of -16.8~ -27.9 dB for frequencies of 90~100 GHz. The mixer achieves maximum CG of 3.6 dB at 95 GHz, and CG of 2.1±1.5 dB for frequencies of 91.9~99.4 GHz. That is, the corresponding 3 dB CG bandwidth is 7.5 GHz. In addition, the mixer achieves LO-RF isolation of 36.8 dB at 94 GHz. To the authors’ knowledge, the CG, LO-RF isolation and power dissipation results are the best data ever reported for a 94 GHz CMOS/BiCMOS up-conversion mixer.

Keywords: CMOS, W-band, up-conversion mixer, conversion gain, negative resistance compensation, output buffer amplifier

Procedia PDF Downloads 502
2425 2 Stage CMOS Regulated Cascode Distributed Amplifier Design Based On Inductive Coupling Technique in Submicron CMOS Process

Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

This paper proposes one stage and two stage CMOS Complementary Regulated Cascode Distributed Amplifier (CRCDA) design based on Inductive and Transformer coupling techniques. Usually, Distributed amplifier is based on inductor coupling between gate and gate of MOSFET and between drain and drain of MOSFET. But this paper propose some new idea, by coupling with differential primary windings of transformer between gate and gate of MOSFET first stage and second stage of regulated cascade amplifier and by coupling with differential secondary windings transformer of MOSFET between drain and drain of MOSFET first stage and second stage of regulated cascade amplifier. This paper also proposes polynomial modeling of Silicon Transformer passive equivalent circuit from Nanyang Technological University which is used to extract frequency response of transformer. Cadence simulation results are used to verify validity of transformer polynomial modeling which can be used to design distributed amplifier without Cadence. 4 parameters of scattering matrix of 2 port of the propose circuit is derived as a function of 4 parameters of impedance matrix.

Keywords: CMOS regulated cascode distributed amplifier, silicon transformer modeling with polynomial, low power consumption, distribute amplification technique

Procedia PDF Downloads 475
2424 Design and Fabrication of Electricity Generating Speed Breaker

Authors: Haider Aamir, Muhammad Ali Khalid

Abstract:

Electricity harvesting speed bump (EHSB) is speed breaker of conventional shape, but the difference is that it is not fixed, rather it moves up and down, and electricity can be generated from its vibrating motion. This speed bump consists of an upper cover which will move up and down, a shaft mechanism which will be used to drive the generator and a rack and pinion mechanism which will connect the cover and shaft. There is a spring mechanism to return the cover to its initial state when a vehicle has passed over the bump. Produced energy in the past was up to 80 Watts. For this purpose, a clutch mechanism is used so that both the up-down movements of the cover can be used to drive the generator. Mechanical Motion Rectifier (MMR) mechanism ensures the conversion of both the linear motions into rotational motion which is used to drive the generator.

Keywords: electricity harvesting, generator, rack and pinion, stainless steel shaft

Procedia PDF Downloads 240
2423 A Low-Power, Low-Noise and High-Gain 58~66 GHz CMOS Receiver Front-End for Short-Range High-Speed Wireless Communications

Authors: Yo-Sheng Lin, Jen-How Lee, Chien-Chin Wang

Abstract:

A 60-GHz receiver front-end using standard 90-nm CMOS technology is reported. The receiver front-end comprises a wideband low-noise amplifier (LNA), and a double-balanced Gilbert cell mixer with a current-reused RF single-to-differential (STD) converter, an LO Marchand balun and a baseband amplifier. The receiver front-end consumes 34.4 mW and achieves LO-RF isolation of 60.7 dB, LO-IF isolation of 45.3 dB and RF-IF isolation of 41.9 dB at RF of 60 GHz and LO of 59.9 GHz. At IF of 0.1 GHz, the receiver front-end achieves maximum conversion gain (CG) of 26.1 dB at RF of 64 GHz and CG of 25.2 dB at RF of 60 GHz. The corresponding 3-dB bandwidth of RF is 7.3 GHz (58.4 GHz to 65.7 GHz). The measured minimum noise figure was 5.6 dB at 64 GHz, one of the best results ever reported for a 60 GHz CMOS receiver front-end. In addition, the measured input 1-dB compression point and input third-order inter-modulation point are -33.1 dBm and -23.3 dBm, respectively, at 60 GHz. These results demonstrate the proposed receiver front-end architecture is very promising for 60 GHz direct-conversion transceiver applications.

Keywords: CMOS, 60 GHz, direct-conversion transceiver, LNA, down-conversion mixer, marchand balun, current-reused

Procedia PDF Downloads 421
2422 Designing and Simulation of a CMOS Square Root Analog Multiplier

Authors: Milad Kaboli

Abstract:

A new CMOS low voltage current-mode four-quadrant analog multiplier based on the squarer circuit with voltage output is presented. The proposed circuit is composed of a pair of current subtractors, a pair differential-input V-I converters and a pair of voltage squarers. The circuit was simulated using HSPICE simulator in standard 0.18 μm CMOS level 49 MOSIS (BSIM3 V3.2 SPICE-based). Simulation results show the performance of the proposed circuit and experimental results are given to confirm the operation. This topology of multiplier results in a high-frequency capability with low power consumption. The multiplier operates for a power supply ±1.2V. The simulation results of analog multiplier demonstrate a THD of 0.65% in 10MHz, a −3dB bandwidth of 1.39GHz, and a maximum power consumption of 7.1mW.

Keywords: analog processing circuit, WTA, LTA, low voltage

Procedia PDF Downloads 440
2421 Voltage Controlled Ring Oscillator for RF Applications in 0.18 µm CMOS Technology

Authors: Mohammad Arif Sobhan Bhuiyan, Zainal Abidin Nordin, Mamun Bin Ibne Reaz

Abstract:

A compact and power efficient high performance Voltage Controlled Oscillator (VCO) is a must in analog and digital circuits especially in the communication system, but the best trade-off among the performance parameters is a challenge for researchers. In this paper, a design of a compact 3-stage differential voltage controlled ring oscillator (VCRO) with low phase noise, low power and higher tuning bandwidth is proposed in 0.18 µm CMOS technology. The VCRO is designed with symmetric load and positive feedback techniques to achieve higher gain and minimum delay. The proposed VCRO can operate at tuning range of 3.9-5.0 GHz at 1.6 V supply voltage. The circuit consumes only 1.0757 mW of power and produces -129 dbc/Hz. The total active area of the proposed VCRO is only 11.74 x 37.73 µm2. Such a VCO can be the best choice for compact and low-power RF applications.

Keywords: CMOS, VCO, VCRO, oscillator

Procedia PDF Downloads 437
2420 High Power Low Loss CMOS SPDT Antenna Switch for LTE-A Front End Module

Authors: Ki-Jin Kim, Suk-Hui LEE, Sanghoon Park, K. H. Ahn

Abstract:

A high power, low loss asymmetric single pole double through(SPDT) antenna switch for LTE-A Front-End Module(FEM) is presented in this paper by using CMOS technology. For the usage of LTE-A applications, low loss and high linearity are the key features which are very challenging works under CMOS process. To enhance insertion loss(IL) and power handling capability, this paper adopts asymmetric Transmitter (TX) and RX (Receiver) structure, floating body technique, multi-stacked structure, and feed forward capacitor technique. The designed SPDT switch shows TX IL 0.34 dB, RX IL 0.73 dB, P1dB 38.9 dBm at 0.9 GHz and TX IL 0.37 dB, RX IL 0.95 dB, P1dB 39.1 dBm at 2.5 GHz respectively.

Keywords: CMOS switch, SPDT switch, high power CMOS switch, LTE-A FEM

Procedia PDF Downloads 335
2419 The Design of PFM Mode DC-DC Converter with DT-CMOS Switch

Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter

Procedia PDF Downloads 424
2418 Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption whivh has a very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to symmetrical input stage. P-Spice simulation results using 0.18µm MIETEC CMOS process parameters using supply voltage of ±1.2V and 50μA biasing current. The P-Spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, open-loop gain-bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/µS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA

Procedia PDF Downloads 283
2417 Design and Simulation a Low Phase Noise CMOS LC VCO for IEEE802.11a WLAN Applications

Authors: Hooman Kaabi, Raziyeh Karkoub

Abstract:

This work proposes a structure of AMOS-varactors. A 5GHz LC-VCO designed in TSMC 0.18μm CMOS to improve phase noise and tuning range performance. The tuning range is from 5.05GHZ to 5.88GHz.The phase noise is -154.9dBc/Hz at 1MHz offset from the carrier. It meets the requirements for IEEE 802.11a WLAN standard.

Keywords: CMOS LC VCO, spiral inductor, varactor, phase noise, tuning range

Procedia PDF Downloads 501
2416 A Strategy of Direct Power Control for PWM Rectifier Reducing Ripple in Instantaneous Power

Authors: T. Mohammed Chikouche, K. Hartani

Abstract:

In order to solve the instantaneous power ripple and achieve better performance of direct power control (DPC) for a three-phase PWM rectifier, a control method is proposed in this paper. This control method is applied to overcome the instantaneous power ripple, to eliminate line current harmonics and therefore reduce the total harmonic distortion and to improve the power factor. A switching table is based on the analysis on the change of instantaneous active and reactive power, to select the optimum switching state of the three-phase PWM rectifier. The simulation result shows feasibility of this control method.

Keywords: power quality, direct power control, power ripple, switching table, unity power factor

Procedia PDF Downloads 287
2415 A CMOS Capacitor Array for ESPAR with Fast Switching Time

Authors: Jin-Sup Kim, Se-Hwan Choi, Jae-Young Lee

Abstract:

A 8-bit CMOS capacitor array is designed for using in electrically steerable passive array radiator (ESPAR). The proposed capacitor array shows the fast response time in rising and falling characteristics. Compared to other works in silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technologies, it shows a comparable tuning range and switching time with low power consumption. Using the 0.18um CMOS, the capacitor array features a tuning range of 1.5 to 12.9 pF at 2.4GHz. Including the 2X4 decoder for control interface, the Chip size is 350um X 145um. Current consumption is about 80 nA at 1.8 V operation.

Keywords: CMOS capacitor array, ESPAR, SOI, SOS, switching time

Procedia PDF Downloads 560
2414 Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications

Authors: Kyoung-Il Do, Jun-Geol Park, Hee-Guk Chae, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.

Keywords: electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR, power clamp, silicon controlled rectifier (SCR), latch-up

Procedia PDF Downloads 412
2413 An 8-Bit, 100-MSPS Fully Dynamic SAR ADC for Ultra-High Speed Image Sensor

Authors: F. Rarbi, D. Dzahini, W. Uhring

Abstract:

In this paper, a dynamic and power efficient 8-bit and 100-MSPS Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) is presented. The circuit uses a non-differential capacitive Digital-to-Analog (DAC) architecture segmented by 2. The prototype is produced in a commercial 65-nm 1P7M CMOS technology with 1.2-V supply voltage. The size of the core ADC is 208.6 x 103.6 µm2. The post-layout noise simulation results feature a SNR of 46.9 dB at Nyquist frequency, which means an effective number of bit (ENOB) of 7.5-b. The total power consumption of this SAR ADC is only 1.55 mW at 100-MSPS. It achieves then a figure of merit of 85.6 fJ/step.

Keywords: CMOS analog to digital converter, dynamic comparator, image sensor application, successive approximation register

Procedia PDF Downloads 388
2412 Output Voltage Analysis of CMOS Colpitts Oscillator with Short Channel Device

Authors: Maryam Ebrahimpour, Amir Ebrahimi

Abstract:

This paper presents the steady-state amplitude analysis of MOS Colpitts oscillator with short channel device. The proposed method is based on a large signal analysis and the nonlinear differential equations that govern the oscillator circuit behaviour. Also, the short channel effects are considered in the proposed analysis and analytical equations for finding the steady-state oscillation amplitude are derived. The output voltage calculated from this analysis is in excellent agreement with simulations for a wide range of circuit parameters.

Keywords: colpitts oscillator, CMOS, electronics, circuits

Procedia PDF Downloads 317
2411 Fatigue Life Estimation Using N-Code for Drive Shaft of Passenger Vehicle

Authors: Tae An Kim, Hyo Lim Kang, Hye Won Han, Seung Ho Han

Abstract:

The drive shaft of passenger vehicle has its own function such as transmitting the engine torque from the gearbox and differential gears to the wheels. It must also compensate for all variations in angle or length resulting from manoeuvring and deflection for perfect synchronization between joints. Torsional fatigue failures occur frequently at the connection parts of the spline joints in the end of the drive shaft. In this study, the fatigue life of a drive shaft of passenger vehicle was estimated by using the finite element analysis. A commercial software of n-Code was applied under twisting load conditions, i.e. 0~134kgf•m and 0~188kgf•m, in which the shear strain range-fatigue life relationship considering Signed Shear method, Smith-Watson-Topper equation, Neuber-Hoffman Seeger method, size sensitivity factor and surface roughness effect was taken into account. The estimated fatigue life was verified by a twisting load test of the real drive shaft in a test rig. (Human Resource Training Project for Industry Matched R & D, KIAT, N036200004).

Keywords: drive shaft, fatigue life estimation, passenger vehicle, shear strain range-fatigue life relationship, torsional fatigue failure

Procedia PDF Downloads 239
2410 An Investigation on Hybrid Composite Drive Shaft for Automotive Industry

Authors: Gizem Arslan Özgen, Kutay Yücetürk, Metin Tanoğlu, Engin Aktaş

Abstract:

Power transmitted from the engine to the final drive where useful work is applied through a system consisting of a gearbox, clutch, drive shaft and a differential in the rear-wheel-drive automobiles. It is well-known that the steel drive shaft is usually manufactured in two pieces to increase the fundamental bending natural frequency to ensure safe operation conditions. In this work, hybrid one-piece propeller shafts composed of carbon/epoxy and glass/epoxy composites have been designed for a rear wheel drive automobile satisfying three design specifications, such as static torque transmission capability, torsional buckling and the fundamental natural bending frequency. Hybridization of carbon and glass fibers is being studied to optimize the cost/performance requirements. Composites shaft materials with various fiber orientation angles and stacking sequences are being fabricated and analyzed using finite element analysis (FEA).

Keywords: composite propeller shaft, hybridization, epoxy matrix, static torque transmission capability, torsional buckling strength, fundamental natural bending frequency.

Procedia PDF Downloads 239