Search results for: field effect transistors

Authors: Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Jae Min Myoung

Abstract:

In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V•s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced.

Keywords: Al2O3 sacrificial transfer layer, cylindrical silicon nanowires, dielectrophorestic alignment, field effect transistor

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Authors: Xuerui Niu, Bolin Wang, Xinchuang Zhang, Xiaohua Ma, Bin Hou, Ling Yang

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The application of discrete GaN-based power switches requires the collaboration of silicon-based peripheral circuit structures. However, the packages and interconnection between the Si and GaN devices can introduce parasitic effects to the circuit, which has great impacts on GaN power transistors. GaN-based monolithic power integration technology is an emerging solution which can improve the stability of circuits and allow the GaN-based devices to achieve more functions. Complementary logic circuits consisting of GaN-based E-mode p-channel heterostructure field-effect transistors (p-HFETs) and E-mode n-channel HEMTs can be served as the gate drivers. E-mode p-HFETs with recessed gate have attracted increasing interest because of the low leakage current and large gate swing. However, they suffer from a poor interface between the gate dielectric and polarized nitride layers. The reliability of p-HFETs is analyzed and discussed in this work. In circuit applications, the inverter is always operated with dynamic gate voltage (VGS) rather than a constant VGS. Therefore, dynamic electrical stress has been simulated to resemble the operation conditions for E-mode p-HFETs. The dynamic electrical stress condition is as follows. VGS is a square waveform switching from -5 V to 0 V, VDS is fixed, and the source grounded. The frequency of the square waveform is 100kHz with the rising/falling time of 100 ns and duty ratio of 50%. The effective stress time is 1000s. A number of stress tests are carried out. The stress was briefly interrupted to measure the linear IDS-VGS, saturation IDS-VGS, As VGS switches from -5 V to 0 V and VDS = 0 V, devices are under negative-bias-instability (NBI) condition. Holes are trapped at the interface of oxide layer and GaN channel layer, which results in the reduction of VTH. The negative shift of VTH is serious at the first 10s and then changes slightly with the following stress time. However, different phenomenon is observed when VDS reduces to -5V. VTH shifts negatively during stress condition, and the variation in VTH increases with time, which is different from that when VDS is 0V. Two mechanisms exists in this condition. On the one hand, the electric field in the gate region is influenced by the drain voltage, so that the trapping behavior of holes in the gate region changes. The impact of the gate voltage is weakened. On the other hand, large drain voltage can induce the hot holes generation and lead to serious hot carrier stress (HCS) degradation with time. The poor-quality interface between the oxide layer and GaN channel layer at the gate region makes a major contribution to the high-density interface traps, which will greatly influence the reliability of devices. These results emphasize that the improved etching and pretreatment processes needs to be developed so that high-performance GaN complementary logics with enhanced stability can be achieved.

Keywords: GaN-based E-mode p-HFETs, dynamic electric stress, threshold voltage, monolithic power integration technology

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity, and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: LDMOS, amplifier, back-off, bias circuit

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Authors: N. Masoudnia, M. Fatahi

Abstract:

An experimental study of saturated pool boiling on a single artificial nucleation site without and with the application of an electric field on the boiling surface has been conducted. N-pentane is boiling on a copper surface and is recorded with a high speed camera providing high quality pictures and movies. The accuracy of the visualization allowed establishing an experimental bubble growth law from a large number of experiments. This law shows that the evaporation rate is decreasing during the bubble growth, and underlines the importance of liquid motion induced by the preceding bubble. Bubble rise is therefore studied: once detached, bubbles accelerate vertically until reaching a maximum velocity in good agreement with a correlation from literature. The bubbles then turn to another direction. The effect of applying an electric field on the boiling surface in finally studied. In addition to changes of the bubble shape, changes are also shown in the liquid plume and the convective structures above the surface. Lower maximum rising velocities were measured in the presence of electric fields, especially with a negative polarity.

Keywords: single bubbles, electric field, boiling, effect

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Authors: Fatemeh Yazdanmehr, Iulian Nistor

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The scope of the current study is the evaluation of the electric field effect on electrostatic desalting mathematical modeling with laboratory data. This research study was focused on developing a model for an existing operation desalting unit of one of the Iranian heavy oil field with a 75 MBPD production capacity. The high temperature of inlet oil to dehydration unit reduces the oil recovery, so the mathematical modeling of desalter operation parameters is very significant. The existing production unit operating data has been used for the accuracy of the mathematical desalting plant model. The inlet oil temperature to desalter was decreased from 110 to 80°C, and the desalted electrical field was increased from 0.75 to 2.5 Kv/cm. The model result shows that the desalter parameter changes meet the water-oil specification and also the oil production and consequently annual income is increased. In addition to that, changing desalter operation conditions reduces environmental footprint because of flare gas reduction. Following to specify the accuracy of selected electrostatic desalter electrical field, laboratory data has been used. Experimental data are used to ensure the effect of electrical field change on desalter. Therefore, the lab test is done on a crude oil sample. The results include the dehydration efficiency in the presence of a demulsifier and under electrical field (0.75 Kv) conditions at various temperatures. Comparing lab experimental and electrostatic desalter mathematical model results shows 1-3 percent acceptable error which confirms the validity of desalter specification and operation conditions changes.

Keywords: desalter, electrical field, demulsification, mathematical modeling, water-oil separation

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Authors: Bijay Kumar Sahoo

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An important feature of InₓGa₁-ₓN/GaN heterostructures is strong built-in polarization (BIP) electric field at the hetero-interface due to spontaneous (sp) and piezoelectric (pz) polarizations. The intensity of this electric field reaches several MV/cm. This field has profound impact on optical, electrical and thermal properties. In this work, the effect of BIP field on thermal conductivity of InₓGa₁-ₓN/GaN heterostructure has been investigated theoretically. The interaction between the elastic strain and built in electric field induces additional electric polarization. This additional polarization contributes to the elastic constant of InₓGa₁-ₓN alloy. This in turn modifies material parameters of InₓGa₁-ₓN. The BIP mechanism enhances elastic constant, phonon velocity and Debye temperature and their bowing constants in InₓGa₁-ₓN alloy. These enhanced thermal parameters increase phonon mean free path which boost thermal conduction process. The thermal conductivity (k) of InxGa1-xN alloy has been estimated for x=0, 0.1, 0.3 and 0.9. Computation finds that irrespective of In content, the room temperature k of InₓGa₁-ₓN/GaN heterostructure is enhanced by BIP mechanism. Our analysis shows that at a certain temperature both k with and without BIP show crossover. Below this temperature k with BIP field is lower than k without BIP; however, above this temperature k with BIP field is significantly contributed by BIP mechanism leading to k with BIP field become higher than k without BIP field. The crossover temperature is primary pyroelectric transition temperature. The pyroelectric transition temperature of InₓGa₁-ₓN alloy has been predicted for different x. This signature of pyroelectric nature suggests that thermal conductivity can reveal pyroelectricity in InₓGa₁-ₓN alloy. The composition dependent room temperature k for x=0.1 and 0.3 are in line with prior experimental studies. The result can be used to minimize the self-heating effect in InₓGa₁-ₓN/GaN heterostructures.

Keywords: built-in polarization, phonon relaxation time, thermal properties of InₓGa₁-ₓN /GaN heterostructure, self-heating

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Authors: Somojit Saha, Rohit K. Chatterjee, Sarit K. Das, Avijit Kar

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A new force field is designed for propagation of the parametric contour into deep narrow cortical fold in the application of knowledge based reconstruction of cerebral cortex from MR image of brain. Designing of this force field is highly inspired by the Generalized Gradient Vector Flow (GGVF) model and markedly differs in manipulation of image information in order to determine the direction of propagation of the contour. While GGVF uses edge map as its main driving force, the newly designed force field uses the map of distance between zero valued pixels and their nearest non-zero valued pixel as its main driving force. Hence, it is called Zero-Non-Zero Distance (ZNZD) force field. The objective of this force field is forceful propagation of the contour beyond spurious convergence due to partial volume effect (PVE) in to narrow sulcal fold. Being function of the corresponding non-zero pixel value, the force field has got an inherent property to determine spuriousness of the edge automatically. It is effectively applied along with some morphological processing in the application of cortical reconstruction to breach the hindrance of PVE in narrow sulci where conventional GGVF fails.

Keywords: deformable model, external force field, partial volume effect, cortical reconstruction, MR image of brain

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Authors: Farhad Aalizadeh, Ali Moosavi

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This paper presents a two-dimensional Computational Fluid Dynamics (CFDs) simulation for the steady, particle tracking. The purpose of this paper is applied magnetic field effect on Magnetic Nanoparticles velocities distribution. It is shown that the permeability of the particles determines the effect of the magnetic field on the deposition of the particles and the deposition of the particles is inversely proportional to the Reynolds number. Using MHD and its property it is possible to control the flow velocity, remove the fouling on the walls and return the system to its original form. we consider a channel 2D geometry and solve for the resulting spatial distribution of particles. According to obtained results when only magnetic fields are applied perpendicular to the flow, local particles velocity is decreased due to the direct effect of the magnetic field return the system to its original fom. In the method first, in order to avoid mixing with blood, the ferromagnetic particles are covered with a gel-like chemical composition and are injected into the blood vessels. Then, a magnetic field source with a specified distance from the vessel is used and the particles are guided to the affected area. This paper presents a two-dimensional Computational Fluid Dynamics (CFDs) simulation for the steady, laminar flow of an incompressible magnetorheological (MR) fluid between two fixed parallel plates in the presence of a uniform magnetic field. The purpose of this study is to develop a numerical tool that is able to simulate MR fluids flow in valve mode and determineB0, applied magnetic field effect on flow velocities and pressure distributions.

Keywords: MHD, channel clots, magnetic nanoparticles, simulations

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Authors: Ashkan Javadzadegan, Aitak Javadzadegan, Babak Fakhim

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One of possible ways to retard movement of fluid is through applying an external magnetic field. In this regard, this study is focused on the effect of a uniform transverse magnetic field on fluid flow behavior inside a channel with a local symmetric constriction. Also, Ellis Non-Newtonian model is implemented to address the effects of shear-dependent viscosity. According to the results, the flow separation downstream of the constriction can be controlled by applying an external magnetic field and/or manipulating the shear-thinning degree of fluid. It is also demonstrated that pressure drop increases by an increase in the strength of the magnetic field.

Keywords: magnetic field, non-Newtonian, separation, shear thinning

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Authors: Niaz Gharavi, Hexin Zhang

Abstract:

The shear modulus of a timber beam can be determined using torsion test or shear field test method. The shear field test method is based on shear distortion measurement of the beam at the zone with the constant transverse load in the standardized four-point bending test. The current code of practice advises using two metallic arms act as an instrument to measure the diagonal displacement of the constructing square. The size and the position of the constructing square might influence the shear modulus determination. This study aimed to investigate the size and the position effect of the square in the shear field test method. A binocular stereo vision system has been employed to determine the 3D displacement of a grid of target points. Six glue laminated beams were produced and tested. Analysis of Variance (ANOVA) was performed on the acquired data to evaluate the significance of the size effect and the position effect of the square. The results have shown that the size of the square has a noticeable influence on the value of shear modulus, while, the position of the square within the area with the constant shear force does not affect the measured mean shear modulus.

Keywords: shear field test method, structural-sized test, shear modulus of Glulam beam, photogrammetry approach

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Authors: Layla Farhat, Mathieu Bardoux, Stéphane Longuemart, Ziad Herro, Abdelhak Hadj Sahraoui

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Electrocaloric (EC) effect refers to the isothermal entropy or adiabatic temperature changes of a dielectric material induced by an external electric field. This phenomenon has been largely ignored for application because only modest EC effects (2.6

Keywords: electrocaloric effect, thermoreflectance, ferroelectricity, cooling system

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Authors: Hamdi Belgacem, Fradi Aymen

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In this paper we present a low power, low cost differential logic unit (LU). The proposed LU receives dual-rail inputs and generates dual-rail outputs. The proposed circuit can be used in Arithmetic and Logic Units (ALU) of processor. It can be also dedicated for self-checking applications based on dual duplication code. Four logic functions as well as their inverses are implemented within a single Logic Unit. The hardware overhead for the implementation of the proposed LU is lower than the hardware overhead required for standard LU implemented with standard CMOS logic style. This new implementation is attractive as fewer transistors are required to implement important logic functions. The proposed differential logic unit can perform 8 Boolean logical operations by using only 16 transistors. Spice simulations using a 32 nm technology was utilized to evaluate the performance of the proposed circuit and to prove its acceptable electrical behaviour.

Keywords: differential logic unit, double pass transistor logic, low power CMOS design, low cost CMOS design

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Authors: M. Zake, I. Barmina, R. Valdmanis, A. Kolmickovs

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Experimental investigations of the DC electric field effect on thermal decomposition of biomass, formation of the axial flow of volatiles (CO, H2, CxHy), mixing of volatiles with swirling airflow at low swirl intensity (S ≈ 0.2-0.35), their ignition and on formation of combustion dynamics are carried out with the aim to understand the mechanism of electric field influence on biomass gasification, combustion of volatiles and heat energy production. The DC electric field effect on combustion dynamics was studied by varying the positive bias voltage of the central electrode from 0.6 kV to 3 kV, whereas the ion current was limited to 2 mA. The results of experimental investigations confirm the field-enhanced biomass gasification with enhanced release of volatiles and the development of endothermic processes at the primary stage of thermochemical conversion of biomass determining the field-enhanced heat energy consumption with the correlating decrease of the flame temperature and heat energy production at this stage of flame formation. Further, the field-enhanced radial expansion of the flame reaction zone correlates with a more complete combustion of volatiles increasing the combustion efficiency by 3 % and decreasing the mass fraction of CO, H2 and CxHy in the products, whereas by 10 % increases the average volume fraction of CO2 and the heat energy production downstream the combustor increases by 5-10 %

Keywords: biomass, combustion, electrodynamic control, gasification

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Authors: Fathi Abubrig, Mohamed Delfag, Suad Abuzariba

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The influence of the crystal field interactions on the mixed spin-3/2 and spin-5/2 ferromagnetic Ising system is considered by using the mean field theory based on Bogoliubov inequality for the Gibbs free energy. The ground-state phase diagram is constructed, the phase diagrams of the second-order critical temperatures are obtained, and the thermal variation of the sublattice magnetizations is investigated in detail. We find some interesting phenomena for the sublattice magnetizations at particular values of the crystal field interactions.

Keywords: crystal field, Ising system, ferromagnetic, magnetization, phase diagrams

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Authors: Kittipong Tripetch, Nobuhiko Nakano

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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: floating active resistor, complementary common gate, complementary regulated cascode, current mirror

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Authors: Samson Mil'shtein, Dhawal Asthana, Benjamin Sullivan

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The wide energy gap of GaN is the major parameter justifying the design and fabrication of high-power electronic components made of this material. However, the existence of a piezo-electrics in nature sheet charge at the AlGaN/GaN interface complicates the control of carrier injection into the intrinsic channel of GaN HEMTs (High Electron Mobility Transistors). As a result, most of the transistors created as R&D prototypes and all of the designs used for mass production are D-mode devices which introduce challenges in the design of integrated circuits. This research presents the design and modeling of an E-mode GaN HEMT with a very low turn-on voltage. The proposed device includes two critical elements allowing the transistor to achieve zero conductance across the channel when Vg = 0V. This is accomplished through the inclusion of an extremely thin, 2.5nm intrinsic Ga₀.₇₄Al₀.₂₆N spacer layer. The added spacer layer does not create piezoelectric strain but rather elastically follows the variations of the crystal structure of the adjacent GaN channel. The second important factor is the design of a gate metal with a high work function. The use of a metal gate with a work function (Ni in this research) greater than 5.3eV positioned on top of n-type doped (Nd=10¹⁷cm⁻³) Ga₀.₇₄Al₀.₂₆N creates the necessary built-in potential, which controls the injection of electrons into the intrinsic channel as the gate voltage is increased. The 5µm long transistor with a 0.18µm long gate and a channel width of 30µm operate at Vd=10V. At Vg =1V, the device reaches the maximum drain current of 0.6mA, which indicates a high current density. The presented device is operational at frequencies greater than 10GHz and exhibits a stable transconductance over the full range of operational gate voltages.

Keywords: compound semiconductors, device modeling, enhancement mode HEMT, gallium nitride

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Authors: Abdelmadjid Mammeri, Fatima Zohra Mahi, Luca Varani, H. Marinchoi

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We propose an analytical model for the admittance and the noise calculations of the InGaAs transistor and diode. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent of the small-signal admittance response is determined by the total currents and the potentials matrix relation between the gate and the drain terminals. The noise is evaluated by using the real part of the transistor/diode admittance under a small-signal perturbation. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; can give significant information about the noise frequency dependence in the InGaAs transistor and diode.

Keywords: InGaAs transistors, InGaAs diode, admittance, resonant peaks, plasma waves, analytical model

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Authors: Nuray Yılmaz Baran

Abstract:

The conjugated Schiff base polymers which are also called as polyazomethines are promising materials for various applications due to their good thermal resistance semiconductive, liquid crystal, fiber forming, nonlinear optical outstanding photo- and electroluminescence and antimicrobial properties. In recent years, polyazomethines have attracted intense attention of researchers especially due to optoelectronic properties which have made its usage possible in organic light emitting diodes (OLEDs), solar cells (SCs), organic field effect transistors (OFETs), and photorefractive holographic materials (PRHMs). In this study, N-(pyridin-2-ylmethylidene)pyridin-2-amine Schiff base was synthesized from condensation reaction of 2-aminopyridine with 2-pyridine carbaldehyde. Polymerization of Schiff base was achieved by polycondensation reaction using NaOCl oxidant in methanol medium at various time and temperatures. The synthesized Schiff base monomer and polymer (Poly(N-(pyridin-2-ylmethylidene)pyridin-2-amine)) was characterized by UV-vis, FT-IR, 1H-NMR, XRD techniques. Molecular weight distribution and the surface morphology of the polymer was determined by GPC and SEM-EDAX techniques. Thermal behaviour of the monomer and polymer was investigated by TG/DTG, DTA and DSC techniques.

Keywords: polyazomethines, polycondensation reaction, Schiff base polymers, thermal stability

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Authors: Tomasz Borowski, Dawid Sołoducha, Rafał Rakoczy, Marian Kordas

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The growing interest in magnetic fields applications is visible due to the increased number of articles on this topic published in the last few years. In this study, the influence of various magnetic fields (MF) on the mass transfer process was examined. To carry out the prototype set-up equipped with an MF generator that is able to generate a pulsed magnetic field (PMF), oscillating magnetic field (OMF), rotating magnetic field (RMF) and static magnetic field (SMF) was used. To demonstrate the effect of MF’s on mass transfer, the calcium carbonate precipitation process was selected. To the vessel with attached conductometric probes and placed inside the generator, specific doses of calcium chloride and sodium carbonate were added. Electrical conductivity changes of the mixture inside the vessel were measured over time until equilibrium was established. Measurements were conducted for various MF strengths and concentrations of added chemical compounds. Obtained results were analyzed, which allowed to creation of mathematical correlation models showing the influence of MF’s on the studied process.

Keywords: mass transfer, oscillating magnetic field, rotating magnetic field, static magnetic field

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Authors: B. K. Sahoo

Abstract:

Superior thermoelectric (TE) efficiency of AlₓIn₁₋ₓN /GaN heterostructure (HS) requires a minimum value of thermal conductivity (k). A smaller k would lead to even further increase of TE figure of merit (ZT). The built-in polarization (BIP) electric field of AlₓIn₁₋ₓN /GaN HS enhances S, and σ of the HS, however, the effect of BIP field on k of the HS has not been explored. Study of thermal conductivities (k: without BIP and kp: including BIP) vs temperature predicts pyroelectric behavior of HS. Both k and kp show crossover at a temperature Tp. The result shows that below Tp, kp < k due to negative thermal expansion coefficient (TEC). However, above Tp, kp > k. Above Tp, piezoelectric polarization dominates over spontaneous polarization due to positive TEC. This generates more lattice mismatch resulting in the significant contribution of BIP field to thermal conductivity. Thus, Tp can be considered as primary pyroelectric transition temperature of the material as above Tp thermal expansion takes place which is the reason for the secondary pyroelectric effect. It is found that below Tp, kp is decreased; thus enhancing TE efficiency. For x=0.1, 0.2 and 0.3; Tp are close to 200, 210 and 260 K, respectively. Thus, k of the HS can be modified as per requirement by tailoring the Al composition; making it suitable simultaneously for the design of high-temperature pyroelectric sensors and TE module for maximum power production.

Keywords: AlₓIn₁₋ₓN/GaN heterostructure, built in polarization, pyroelectric behavior, thermoelectric efficiency

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Authors: Bharti Gupta, Alaukik Sharma

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The first aim is to determine the effect of the Earth's magnetic field on the motion of a conductor to evaluate the variations of the orbital elements of the conductor due to these effects. The effects of Earth's magnetic field on the motion of conductors have been studied at different heights, longitudes and latitudes. When the conductor cut the geomagnetic line of force, then an electro-motive force (EMF) is induced across to the conductor. Due to this induced EMF, an induced current will flow through the conductor. Resulting, a Lorentz force will be applied on the conductor who opposes the motion of the conductor. So our second aim is to determine the accurate value of Induced EMF and induced Lorentz Force at different heights, longitudes and latitudes.

Keywords: induced EMF, Lorentz force, geomagnetic lines of force, moving conductor

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Authors: Adriana-Gabriela Plaiasu, Catalin Marian Ducu

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The interest in the unique properties associated with materials having structures on a nanometer scale has been increasing at an exponential rate in last decade. Among the functional mineral compounds such as perovskite (CaTiO3), rutile (TiO2), CaF2, spinel (MgAl2O4), wurtzite (ZnS), zincite (ZnO) and the cupric oxide (CuO) has been used in numerous applications such as catalysis, semiconductors, batteries, gas sensors, biosensors, field transistors and medicine. The Solar Physical Vapor Deposition (SPVD) presented in the paper as elaboration method is an original process to prepare nanopowders working under concentrated sunlight in 2kW solar furnaces. The influence of the synthesis parameters on the chemical and microstructural characteristics of zinc and manganese oxides synthesized nanophases has been systematically studied using XRD, TEM and SEM.

Keywords: characterization, morphological, nano-oxides, structural

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Authors: Najafi S., Heidai R., Jamei R., Tofigh F.

Abstract:

In order to study the effects of magnetic field on the root system and growth of Phaseolus vulgaris, an experiment was conducted in 2012. The possible involvement of magnetic field (MF) pretreatment in physiological factors of Phaseolus vulgaris was investigated. Seeds were subjected to 10 days with 1.8 mT of magnetic field for 1h per day. MF pretreatment decreased the plant height, fresh and dry weight, length of root and length of shoot, Chlorophyll a, Chlorophyll b and carotenoid in 10 days old seedling. In addition, activity of enzymes such as Catalase and Guaiacol peroxidase was decreased due to MF exposure. Also, the total Protein and DPPH content of the treated by magnetic field was not significantly changed in compare to control groups, while the flavonoid, Phenol and prolin content of the treated of the treated by magnetic field was significantly changed in compare to control groups. Lateral branches of roots and secondary roots increased with MF. The results suggest that pretreatment of this MF plays important roles in changes in crop productivity. In all cases there was observed a slight stimulating effect of the factors examined. The growth dynamics were weakened. The plants were shorter. Moreover, the effect of a magnetic field on the crop of Phaseolus vulgaris and its structure was small.

Keywords: carotenoid, Chlorophyll a, Chlorophyll b, DPPH, enzymes, flavonoid, germination, growth, phenol, proline, protein, magnetic field, phaseolus vulgaris

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Authors: X. F. Sun, X. D. Wen, L. J. Liu, C. C. Wu, Y. H. Jia

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The field reversed closed magnetic field configuration plasmoid has a potential for large thrust and high power propulsion missions such as deep space exploration due to its high plasma density and larger azimuthal current, which will be a most competitive program for the next generation electric propulsion technology. Moreover, without the electrodes, it also has a long lifetime. Thus, the research on this electric propulsion technology is quite necessary. The plasmoid will be formatted and accelerated by applying a rotation magnetic field (RMF) method. And, the essence of this technology lies on the generation of the azimuthal electron currents driven by RMF. Therefore, the effect of RMF current on the plasmoid acceleration efficiency is a concerned problem. In the paper, the influences of the penetration process of RMF in plasma, the relations of frequency and amplitude of input RF power with current strength and the RMF antenna configuration on the plasmoid acceleration efficiency will be given by a two-fluid numerical simulation method. The results show that the radio-frequency and input power have remarkable influence on the formation and acceleration of plasmoid. These results will provide useful advice for the development, and optimized designing of field reversed configuration plasmoid thruster.

Keywords: rotation magnetic field, current driven, plasma penetration, electric propulsion

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Authors: Farzad Tofigh, Saeideh Najafi, Reza Heidari, Rashid Jamei

Abstract:

In order to study the effects of magnetic field on the root system and growth of Phaseolus vulgaris, an experiment was conducted in 2012. The possible involvement of magnetic field (MF) pretreatment in physiological factors of Phaseolus vulgaris was investigated. Seeds were subjected to 10 days with 1.8 mT of magnetic field for 1h per day. MF pretreatment decreased the plant height, fresh and dry weight, length of root and length of shoot, Chlorophyll a, Chlorophyll b and carotenoid in 10 days old seedling. In addition, activity of enzymes such as Catalase and Guaiacol peroxidase was decreased due to MF exposure. Also, the total Protein and DPPH content of the treated by magnetic field was not significantly changed in compare to control groups, while the flavonoid, Phenol and prolin content of the treated of the treated by magnetic field was significantly changed in compare to control groups. Lateral branches of roots and secondary roots increased with MF. The results suggest that pretreatment of this MF plays important roles in changes in crop productivity. In all cases there was observed a slight stimulating effect of the factors examined. The growth dynamics were weakened. The plants were shorter. Moreover, the effect of a magnetic field on the crop of Phaseolus vulgaris and its structure was small.

Keywords: carotenoid, chlorophyll a, chlorophyll b, DPPH, enzymes, flavonoid, germination, growth, phenol, proline, protein, magnetic field

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Authors: H. Vargova, J. Strecka, N. Tomasovicova

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A rigorous analytical treatment, with the help of a concept of negativity, is used to study the quantum and thermal entanglement in an isotropic mixed spin-(1/2,S) Heisenberg dimer. The effect of the spin-S magnitude, as well as the effect of diversity between Landé g-factors of magnetic constituents on system entanglement, is exhaustively analyzed upon the variation of the external magnetic and electric field, respectively. It was identified that the increasing magnitude of the spin-S species in a mixed spin-(1/2,S) Heisenberg dimer with comparative Landé g-factors have always a reduction effect on a degree of the quantum entanglement, but it strikingly shifts the thermal entanglement to the higher temperatures. Surprisingly, out of the limit of identical Landé g-factors, the increasing magnitude of spin-S entities can enhance the system entanglement in both low and high magnetic fields. Besides this, we identify that the analyzed dimer with a high-enough magnitude of the spin-S entities at a sufficiently high magnetic field can exhibit unconventional thermally driven re-entrance between the entangled and unentangled mixed state. The importance of the electric-field stimuli is also discussed in detail.

Keywords: quantum and thermal entantanglement, mixed spin Heisenberg model, negativity, reentrant phase transition

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Authors: Anwar H. Jarndal, Ahmed S. Elwakil

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In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

Keywords: fractional-order modeling, GaNHEMT, si-substrate, open de-embedding structure

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Authors: M. Meenasaranya, S. Saravanan

Abstract:

Nonlinear stability analysis is carried out to determine the effect of surface temperature modulation in an infinite horizontal porous layer heated from below. The layer is saturated by an electrically conducting, viscous, incompressible and Newtonian fluid. The Brinkman model is used for momentum equation, and the Boussinesq approximation is invoked. The system is assumed to be bounded by rigid boundaries. The energy theory is implemented to find the global exponential stability region of the considered system. The results are analysed for arbitrary values of modulation frequency and amplitude. The existence of subcritical instability region is confirmed by comparing the obtained result with the known linear result. The vertical magnetic field is found to stabilize the system.

Keywords: Brinkman model, energy method, magnetic field, surface temperature modulation

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Authors: Geng Xiangren, Liu Lei, Gui Ye-Wei, Tang Wei, Wang An-ling

Abstract:

The malfunction of thermal protection system (TPS) caused by aerodynamic heating is a latent trouble to aircraft structure safety. Accurately predicting the structure temperature field is quite important for the TPS design of hypersonic vehicle. Since Thornton’s work in 1988, the coupled method of aerodynamic heating and heat transfer has developed rapidly. However, little attention has been paid to the influence of structural deformation on aerodynamic heating and structural temperature field. In the flight, especially the long-endurance flight, the structural deformation, caused by the aerodynamic heating and temperature rise, has a direct impact on the aerodynamic heating and structural temperature field. Thus, the coupled interaction cannot be neglected. In this paper, based on the method of static aero-thermo-elasticity, considering the influence of aero-thermo-elasticity deformation, the aerodynamic heating and heat transfer coupled results of hypersonic vehicle wing model were calculated. The results show that, for the low-curvature region, such as fuselage or center-section wing, structure deformation has little effect on temperature field. However, for the stagnation region with high curvature, the coupled effect is not negligible. Thus, it is quite important for the structure temperature prediction to take into account the effect of elastic deformation. This work has laid a solid foundation for improving the prediction accuracy of the temperature distribution of aircraft structures and the evaluation capacity of structural performance.

Keywords: aerothermoelasticity, elastic deformation, structural temperature, multi-field coupling

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Authors: H. C. Woo, F. Bouanis, C. S. Cojocaur

Abstract:

Graphene, which consists of a single layer of carbon atoms in a honeycomb lattice, is an interesting potential optoelectronic material because of graphene’s high carrier mobility, zero bandgap, and electron–hole symmetry. Graphene can absorb light and convert it into a photocurrent over a wide range of the electromagnetic spectrum, from the ultraviolet to visible and infrared regimes. Over the last several years, a variety of graphene-based photodetectors have been reported, such as graphene transistors, graphene-semiconductor heterojunction photodetectors, graphene based bolometers. It is also reported that there are several physical mechanisms enabling photodetection: photovoltaic effect, photo-thermoelectric effect, bolometric effect, photogating effect, and so on. In this work, we report a simple approach for the realization of graphene based resistive photo-detection devices and the measurements of their photoelectrical response. The graphene were synthesized directly on the glass substrate by novel growth method patented in our lab. Then, the metal electrodes were deposited by thermal evaporation on it, with an electrode length and width of 1.5 mm and 300 μm respectively, using Co to fabricate simple graphene based resistive photosensor. The measurements show that the graphene resistive devices exhibit a photoresponse to the illumination of visible light. The observed re-sistance response was reproducible and similar after many cycles of on and off operations. This photoelectrical response may be attributed not only to the direct photocurrent process but also to the desorption of oxygen. Our work shows that the simple graphene resistive devices have potential in photodetection applications.

Keywords: graphene, resistive sensor, optoelectronics, photoresponse

Procedia PDF Downloads 259