Search results for: silicon nitride
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 433

Search results for: silicon nitride

283 Heat Transfer Process Parameter Optimization in SI/Ge Using TAGUCHI Method

Authors: Evln Ranga Charyulu, S. P. Venu Madhavarao, S. Udaya kumar, S. V. S. S. N. V. G. Krishna Murthy

Abstract:

With the advent of new nanometer process technologies, it is possible to integrate billion transistors on a single substrate. When more and more functionality included there is the possibility of multi-million transistors switching simultaneously consuming more power and dissipating more power along with more leakage of current into the substrate of porous silicon or germanium material. These results in substrate heating and thermal noise generation coupled to signals of interest. The heating process is represented by coupled nonlinear partial differential equations in porous silicon and germanium. By identifying heat sources and heat fluxes may results in designing of ultra-low power circuits. The PDEs are solved by finite difference scheme assuming that boundary layer equations in porous silicon and germanium. Local heat fluxes along the vertical isothermal surface immersed in porous SI/Ge are considered. The parameters considered for optimization are thermal diffusivity, thermal expansion coefficient, thermal diffusion ratio, permeability, specific heat at constant temperatures, Rayleigh number, amplitude of wavy surface, mass expansion coefficient. The diffusion of heat was caused by the concentration gradient. Thermal physical properties are homogeneous and isotropic. By using L8, TAGUCHI method the parameters are optimized.

Keywords: heat transfer, pde, taguchi optimization, SI/Ge

Procedia PDF Downloads 336
282 Fabrication of Cylindrical Silicon Nanowire-Embedded Field Effect Transistor Using Al2O3 Transfer Layer

Authors: Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Jae Min Myoung

Abstract:

In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V•s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced.

Keywords: Al2O3 sacrificial transfer layer, cylindrical silicon nanowires, dielectrophorestic alignment, field effect transistor

Procedia PDF Downloads 457
281 Research of the Activation Energy of Conductivity in P-I-N SiC Structures Fabricated by Doping with Aluminum Using the Low-Temperature Diffusion Method

Authors: Ilkham Gafurovich Atabaev, Khimmatali Nomozovich Juraev

Abstract:

The activation energy of conductivity in p-i-n SiC structures fabricated by doping with Aluminum using the new low-temperature diffusion method is investigated. In this method, diffusion is stimulated by the flux of carbon and silicon vacancies created by surface oxidation. The activation energy of conductivity in the p - layer is 0.25 eV and it is close to the ionization energy of Aluminum in 4H-SiC from 0.21 to 0.27 eV for the hexagonal and cubic positions of aluminum in the silicon sublattice for weakly doped crystals. The conductivity of the i-layer (measured in the reverse biased diode) shows 2 activation energies: 0.02 eV and 0.62 eV. Apparently, the 0.62 eV level is a deep trap level and it is a complex of Aluminum with a vacancy. According to the published data, an analogous level system (with activation energies of 0.05, 0.07, 0.09 and 0.67 eV) was observed in the ion Aluminum doped 4H-SiC samples.

Keywords: activation energy, aluminum, low temperature diffusion, SiC

Procedia PDF Downloads 279
280 Proton Irradiation Testing on Commercial Enhancement Mode GaN Power Transistor

Authors: L. Boyaci

Abstract:

Two basic equipment of electrical power subsystem of space satellites are Power Conditioning Unit (PCU) and Power Distribution Unit (PDU). Today, the main switching element used in power equipment in satellites is silicon (Si) based radiation-hardened MOSFET. GaNFETs have superior performances over MOSFETs in terms of their conduction and switching characteristics. GaNFET has started to take MOSFET’s place in many applications in industry especially by virtue of its switching performances. If GaNFET can also be used in equipment for space applications, this would be great revolution for future space power subsystem designs. In this study, the effect of proton irradiation on Gallium Nitride based power transistors was investigated. Four commercial enhancement mode GaN power transistors from Efficient Power Conversion Corporation (EPC) are irradiated with 30MeV protons while devices are switching. Flux of 8.2x10⁹ protons/cm²/s is applied for 12.5 seconds to reach ultimate fluence of 10¹¹ protons/cm². Vgs-Ids characteristics are measured and recorded for each device before, during and after irradiation. It was observed that if there would be destructive events. Proton induced permanent damage on devices is not observed. All the devices remained healthy and continued to operate. For two of these devices, further irradiation is applied with same flux for 30 minutes up to a total fluence level of 1.476x10¹³ protons/cm². We observed that GaNFETs are fully functional under this high level of radiation and no destructive events and irreversible failures took place for transistors. Results reveal that irradiated GaNFET in this experiment has radiation tolerance under proton testing and very important candidate for being one of the future power switching element in space.

Keywords: enhancement mode GaN power transistors, proton irradiation effects, radiation tolerance

Procedia PDF Downloads 152
279 Development of an Atmospheric Radioxenon Detection System for Nuclear Explosion Monitoring

Authors: V. Thomas, O. Delaune, W. Hennig, S. Hoover

Abstract:

Measurement of radioactive isotopes of atmospheric xenon is used to detect, locate and identify any confined nuclear tests as part of the Comprehensive Nuclear Test-Ban Treaty (CTBT). In this context, the Alternative Energies and French Atomic Energy Commission (CEA) has developed a fixed device to continuously measure the concentration of these fission products, the SPALAX process. During its atmospheric transport, the radioactive xenon will undergo a significant dilution between the source point and the measurement station. Regarding the distance between fixed stations located all over the globe, the typical volume activities measured are near 1 mBq m⁻³. To avoid the constraints induced by atmospheric dilution, the development of a mobile detection system is in progress; this system will allow on-site measurements in order to confirm or infringe a suspicious measurement detected by a fixed station. Furthermore, this system will use beta/gamma coincidence measurement technique in order to drastically reduce environmental background (which masks such activities). The detector prototype consists of a gas cell surrounded by two large silicon wafers, coupled with two square NaI(Tl) detectors. The gas cell has a sample volume of 30 cm³ and the silicon wafers are 500 µm thick with an active surface area of 3600 mm². In order to minimize leakage current, each wafer has been segmented into four independent silicon pixels. This cell is sandwiched between two low background NaI(Tl) detectors (70x70x40 mm³ crystal). The expected Minimal Detectable Concentration (MDC) for each radio-xenon is in the order of 1-10 mBq m⁻³. Three 4-channels digital acquisition modules (Pixie-NET) are used to process all the signals. Time synchronization is ensured by a dedicated PTP-network, using the IEEE 1588 Precision Time Protocol. We would like to present this system from its simulation to the laboratory tests.

Keywords: beta/gamma coincidence technique, low level measurement, radioxenon, silicon pixels

Procedia PDF Downloads 125
278 The Preparation of Silicon and Aluminum Extracts from Tuncbilek and Orhaneli Fly Ashes by Alkali Fusion

Authors: M. Sari Yilmaz, N. Karamahmut Mermer

Abstract:

Coal fly ash is formed as a solid waste product from the combustion of coal in coal fired power stations. Huge amounts of fly ash are produced globally every year and are predicted to increase. Nowadays, less than half of the fly ash is used as a raw material for cement manufacturing, construction and the rest of it is disposed as a waste causing yet another environmental concern. For this reason, the recycling of this kind of slurries into useful materials is quite important in terms of economical and environmental aspects. The purpose of this study is to evaluate the Orhaneli and Tuncbilek coal fly ashes for utilization in some industrial applications. Therefore the mineralogical and chemical compositions of these fly ashes were analyzed by X-ray fluorescence (XRF) spectroscopy and X-ray diffraction (XRD). The silicon (Si) and aluminum (Al) in the fly ashes were activated by alkali fusion technique with sodium hydroxide. The obtained extracts were analyzed for Si and Al content by inductively coupled plasma optical emission spectrometry (ICP-OES).

Keywords: extraction, fly ash, fusion, XRD

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277 Characterisation and in vitro Corrosion Resistance of Plasma Sprayed Hydroxyapatite and Hydroxyapatite: Silicon Oxide Coatings on 316L SS

Authors: Gurpreet Singh, Hazoor Singh, Buta Singh Sidhu

Abstract:

In the current investigation plasma spray technique was used for depositing hydroxyapatite (HA) and HA – silicon oxide (SiO2) coatings on 316L SS substrate. In HA-SiO2 coating, 20 wt% SiO2 was mixed with HA. The feedstock and coatings were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM)/energy-dispersive X-ray spectroscopy (EDX) analyses. The corrosion resistance of the uncoated, HA coated and HA + 20 wt% SiO2 coated 316L SS was investigated by electrochemical corrosion testing in simulated human body fluid (Ringer’s solution). The influence of SiO2 (20 wt%) on corrosion resistance was determined. After the corrosion testing, the samples were analyzed by XRD and SEM/EDX analyses. The addition of SiO2 reduces the crystallinity of the coating. The corrosion resistance of the 316L SS was found to increase after the deposition of the HA + 20 wt% SiO2 and HA coatings.

Keywords: HA, SiO2, corrosion, Ringer’s solution, 316L SS

Procedia PDF Downloads 419
276 Development of a Sensitive Electrochemical Sensor Based on Carbon Dots and Graphitic Carbon Nitride for the Detection of 2-Chlorophenol and Arsenic

Authors: Theo H. G. Moundzounga

Abstract:

Arsenic and 2-chlorophenol are priority pollutants that pose serious health threats to humans and ecology. An electrochemical sensor, based on graphitic carbon nitride (g-C₃N₄) and carbon dots (CDs), was fabricated and used for the determination of arsenic and 2-chlorophenol. The g-C₃N₄/CDs nanocomposite was prepared via microwave irradiation heating method and was dropped-dried on the surface of the glassy carbon electrode (GCE). Transmission electron microscopy (TEM), X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectroscopy (FTIR), UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) were used for the characterization of structure and morphology of the nanocomposite. Electrochemical characterization was done by electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). The electrochemical behaviors of arsenic and 2-chlorophenol on different electrodes (GCE, CDs/GCE, and g-C₃N₄/CDs/GCE) was investigated by differential pulse voltammetry (DPV). The results demonstrated that the g-C₃N₄/CDs/GCE significantly enhanced the oxidation peak current of both analytes. The analytes detection sensitivity was greatly improved, suggesting that this new modified electrode has great potential in the determination of trace level of arsenic and 2-chlorophenol. Experimental conditions which affect the electrochemical response of arsenic and 2-chlorophenol were studied, the oxidation peak currents displayed a good linear relationship to concentration for 2-chlorophenol (R²=0.948, n=5) and arsenic (R²=0.9524, n=5), with a linear range from 0.5 to 2.5μM for 2-CP and arsenic and a detection limit of 2.15μM and 0.39μM respectively. The modified electrode was used to determine arsenic and 2-chlorophenol in spiked tap and effluent water samples by the standard addition method, and the results were satisfying. According to the measurement, the new modified electrode is a good alternative as chemical sensor for determination of other phenols.

Keywords: electrochemistry, electrode, limit of detection, sensor

Procedia PDF Downloads 144
275 Influence of Laser Excitation on SERS of Silicon Nanocrystals

Authors: Khamael M. Abualnaja, Lidija Šiller, Ben R. Horrocks

Abstract:

Surface enhanced Raman spectroscopy (SERS) of Silicon nano crystals (SiNCs) were obtained using two different laser excitations: 488 nm and 514.5 nm. Silver nano particles were used as plasmonics metal nano particles due to a robust SERS effect that observed when they mixed with SiNCs. SiNCs have been characterized by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It is found that the SiNCs are crystalline with an average diameter of 65 nm and FCC lattice. Silver nano particles (AgNPs) of two different sizes were synthesized using photo chemical reduction of AgNO3 with sodium dodecyl sulfate (SDS). The synthesized AgNPs have a polycrystalline structure with an average particle diameter of 100 nm and 30 nm, respectively. A significant enhancement in the SERS intensity was observed for AgNPs100/SiNCs and AgNPs30/SiNCs mixtures increasing up to 9 and 3 times respectively using 488 nm intensity; whereas the intensity of the SERS signal increased up to 7 and 2 times respectively, using 514.5 nm excitation source. The enhancement in SERS intensities occurs as a result of the coupling between the excitation laser light and the plasmon bands of AgNPs; thus this intense field at AgNPs surface couples strongly to SiNCs. The results provide good consensus between the wavelength of the laser excitation source and surface plasmon resonance absorption band of silver nano particles consider to be an important requirement in SERS experiments.

Keywords: silicon nanocrystals (SiNCs), silver nanoparticles (AgNPs), surface enhanced raman spectroscopy (SERS)

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274 High-Frequency Induction Heat Sintering of Al/SiC/GNS Nanocomposites and Their Tribological Properties

Authors: Mohammad Islam, Iftikhar Ahmad, Hany S. Abdo, Yasir Khalid

Abstract:

High-frequency induction heat sintering (HFIHS) is a fast, efficient powder consolidation technique. In this work, aluminum (Al) powder was mixed with silicon carbide (SiC) and/or graphene nanosheets (GNS) in different proportions and compacted using HFIHS process to produce dense nanocomposites. The nanostructures dispersion was assessed via electron microscopy using both SEM and TEM. Tribological behavior of the nanocomposites was investigated at different loads to determine wear rate and coefficient of friction. The scratch profiles were examined under the microscope to correlate wear properties with the microstructure. While the addition of SiC nanoparticles enhances microhardness values, GNS incorporation promotes dry lubricity with strikingly different wear scratch morphologies. Such Al/SiC/GNS material compositions can be explored for use in automotive brake pad and thermal management applications.

Keywords: aluminum nanocomposites, silicon carbide, graphene nanosheets, tribology

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273 Mechanical Study Printed Circuit Boards Bonding for Jefferson Laboratory Detector

Authors: F. Noto, F. De Persio, V. Bellini, G. Costa. F. Mammoliti, F. Meddi, C. Sutera, G. M. Urcioli

Abstract:

One plane X and one plane Y of silicon microstrip detectors will constitute the front part of the Super Bigbite Spectrometer that is under construction and that will be installed in the experimental Hall A of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory), located in Newport News, Virgina, USA. Each plane will be made up by two nearly identical, 300 μm thick, 10 cm x 10.3 cm wide silicon microstrip detectors with 50 um pitch, whose electronic signals will be transferred to the front-end electronic based on APV25 chips through C-shaped FR4 Printed Circuit Boards (PCB). A total of about 10000 strips are read-out. This paper treats the optimization of the detector support structure, the materials used through a finite element simulation. A very important aspect of the study will also cover the optimization of the bonding parameters between detector and electronics.

Keywords: FEM analysis, bonding, SBS tracker, mechanical structure

Procedia PDF Downloads 339
272 Study of Tribological Behaviour of Al6061/Silicon Carbide/Graphite Hybrid Metal Matrix Composite Using Taguchi's Techniques

Authors: Mohamed Zakaulla, A. R. Anwar Khan

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Al6061 alloy base matrix, reinforced with particles of silicon carbide (10 wt %) and Graphite powder (1wt%), known as hybrid composites have been fabricated by liquid metallurgy route (stir casting technique) and optimized at different parameters like applied load, sliding speed and sliding distance by taguchi method. A plan of experiment generated through taguchi technique was used to perform experiments based on L27 orthogonal array. The developed ANOVA and regression equations are used to find the optimum coefficient of friction and wear under the influence of applied load, sliding speed and sliding distance. On the basis of “smaller the best” the dry sliding wear resistance was analysed and finally confirmation tests were carried out to verify the experimental results.

Keywords: analysis of variance, dry sliding wear, hybrid composite, orthogonal array, Taguchi technique

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271 Enhancement of Interface Properties of Thermoplastic Composite Materials

Authors: Reyhan Ozbask, Emek Moroydor Derin, Mustafa Dogu

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There are a limited number of global companies in the world that manufacture and commercially offer thermoplastic composite prepregs in accordance with aerospace requirements. High-performance thermoplastic materials supplied for aerospace structural applications are PEEK (polyetheretherketone), PPS (polyphenylsulfite), PEI (polyetherimide), and PEKK (polyetherketoneketone). Among these, PEEK is the raw material used in the first applications and has started to become widespread. However, the use of these thermoplastic raw materials in composite production is very difficult due to their high processing temperatures and impregnation difficulties. This study, it is aimed to develop carbon fiber-reinforced thermoplastic PEEK composites that comply with the requirements of the aviation industry that are superior mechanical properties as well as being lightweight. Therefore, it is aimed to obtain high-performance thermoplastic composite materials with improved interface properties by using the sizing method (suspension development through chemical synthesis and functionalization), to optimize the production process. The use of boron nitride nanotube as a bonding agent by modifying its surface constitutes the original aspect of the study as it has not been used in composite production with high-performance thermoplastic materials yet. For this purpose, laboratory-scale studies on the application of thermoplastic compatible sizing will be carried out in order to increase the fiber-matrix interfacial adhesion. The method respectively consists of the selection of appropriate sizing type, laboratory-scale carbon fiber (CF) / poly ether ether ketone (PEEK) polymer interface enhancement studies, manufacturing of laboratory-scale BNNT coated CF/PEEK woven prepreg composites and their tests.

Keywords: carbon fiber reinforced composite, interface enhancement, boron nitride nanotube, thermoplastic composite

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270 Fabrication of Aluminum Nitride Thick Layers by Modified Reactive Plasma Spraying

Authors: Cécile Dufloux, Klaus Böttcher, Heike Oppermann, Jürgen Wollweber

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Hexagonal aluminum nitride (AlN) is a promising candidate for several wide band gap semiconductor compound applications such as deep UV light emitting diodes (UVC LED) and fast power transistors (HEMTs). To date, bulk AlN single crystals are still commonly grown from the physical vapor transport (PVT). Single crystalline AlN wafers obtained from this process could offer suitable substrates for a defect-free growth of ultimately active AlGaN layers, however, these wafers still lack from small sizes, limited delivery quantities and high prices so far.Although there is already an increasing interest in the commercial availability of AlN wafers, comparatively cheap Si, SiC or sapphire are still predominantly used as substrate material for the deposition of active AlGaN layers. Nevertheless, due to a lattice mismatch up to 20%, the obtained material shows high defect densities and is, therefore, less suitable for high power devices as described above. Therefore, the use of AlN with specially adapted properties for optical and sensor applications could be promising for mass market products which seem to fulfill fewer requirements. To respond to the demand of suitable AlN target material for the growth of AlGaN layers, we have designed an innovative technology based on reactive plasma spraying. The goal is to produce coarse grained AlN boules with N-terminated columnar structure and high purity. In this process, aluminum is injected into a microwave stimulated nitrogen plasma. AlN, as the product of the reaction between aluminum powder and the plasma activated N2, is deposited onto the target. We used an aluminum filament as the initial material to minimize oxygen contamination during the process. The material was guided through the nitrogen plasma so that the mass turnover was 10g/h. To avoid any impurity contamination by an erosion of the electrodes, an electrode-less discharge was used for the plasma ignition. The pressure was maintained at 600-700 mbar, so the plasma reached a temperature high enough to vaporize the aluminum which subsequently was reacting with the surrounding plasma. The obtained products consist of thick polycrystalline AlN layers with a diameter of 2-3 cm. The crystallinity was determined by X-ray crystallography. The grain structure was systematically investigated by optical and scanning electron microscopy. Furthermore, we performed a Raman spectroscopy to provide evidence of stress in the layers. This paper will discuss the effects of process parameters such as microwave power and deposition geometry (specimen holder, radiation shields, ...) on the topography, crystallinity, and stress distribution of AlN.

Keywords: aluminum nitride, polycrystal, reactive plasma spraying, semiconductor

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269 A Facile and Room Temperature Growth of Pd-Pt Decorated Hexagonal-ZnO Framework and Their Selective H₂ Gas Sensing Properties

Authors: Gaurav Malik, Satyendra Mourya, Jyoti Jaiswal, Ramesh Chandra

Abstract:

The attractive and multifunctional properties of ZnO make it a promising material for the fabrication of highly sensitive and selective efficient gas sensors at room temperature. This presented article focuses on the development of highly selective and sensitive H₂ gas sensor based on the Pd-Pt decorated ZnO framework and its sensing mechanisms. The gas sensing performance of sputter made Pd-Pt/ZnO electrode on anodized porous silicon (PSi) substrate toward H₂ gas is studied under low detection limit (2–500 ppm) of H₂ in the air. The chemiresistive sensor demonstrated sublimate selectivity, good sensing response, and fast response/recovery time with excellent stability towards H₂ at low temperature operation under ambient environment. The elaborate selective measurement of Pd-Pt/ZnO/PSi structure was performed towards different oxidizing and reducing gases. This structure exhibited advance and reversible response to H₂ gas, which revealed that the acquired architecture with ZnO framework is a promising candidate for H₂ gas sensor.

Keywords: sputtering, porous silicon, ZnO framework, XPS spectra, gas sensor

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268 The Use of Industrial Ecology Principles in the Production of Solar Cells and Solar Modules

Authors: Julius Denafas, Irina Kliopova, Gintaras Denafas

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Three opportunities for implementation of industrial ecology principles in the real industrial production of c-Si solar cells and modules are presented in this study. It includes: material flow dematerialisation, product modification and industrial symbiosis. Firstly, it is shown how the collaboration between R&D institutes and industry helps to achieve significant reduction of material consumption by a) refuse from phosphor silicate glass cleaning process and b) shortening of SiNx coating production step. This work was performed in the frame of Eco-Solar project, where Soli Tek R&D is collaborating together with the partners from ISC-Konstanz institute. Secondly, it was shown how the modification of solar module design can reduce the CO2 footprint for this product and enhance waste prevention. It was achieved by implementing a frameless glass/glass solar module design instead of glass/backsheet with aluminium frame. Such a design change is possible without purchasing new equipment and without loss of main product properties like efficiency, rigidity and longevity. Thirdly, industrial symbiosis in the solar cell production is possible in such case when manufacturing waste (silicon wafer and solar cell breakage) are collected, sorted and supplied as raw-materials to other companies involved in the production chain of c-Si solar cells. The obtained results showed that solar cells produced from recycled silicon can have a comparable electrical parameters like produced from standard, commercial silicon wafers. The above mentioned work was performed at solar cell producer Soli Tek R&D in the frame of H2020 projects CABRISS and Eco-Solar.

Keywords: solar cells and solar modules, manufacturing, waste prevention, recycling

Procedia PDF Downloads 213
267 High Aspect Ratio Sio2 Capillary Based On Silicon Etching and Thermal Oxidation Process for Optical Modulator

Authors: Nguyen Van Toan, Suguru Sangu, Tetsuro Saito, Naoki Inomata, Takahito Ono

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This paper presents the design and fabrication of an optical window for an optical modulator toward image sensing applications. An optical window consists of micrometer-order SiO2 capillaries (porous solid) that can modulate transmission light intensity by moving the liquid in and out of porous solid. A high optical transmittance of the optical window can be achieved due to refractive index matching when the liquid is penetrated into the porous solid. Otherwise, its light transmittance is lower because of light reflection and scattering by air holes and capillary walls. Silicon capillaries fabricated by deep reactive ion etching (DRIE) process are completely oxidized to form the SiO2 capillaries. Therefore, high aspect ratio SiO2 capillaries can be achieved based on silicon capillaries formed by DRIE technique. Large compressive stress of the oxide causes bending of the capillary structure, which is reduced by optimizing the design of device structure. The large stress of the optical window can be released via thin supporting beams. A 7.2 mm x 9.6 mm optical window area toward a fully integrated with the image sensor format is successfully fabricated and its optical transmittance is evaluated with and without inserting liquids (ethanol and matching oil). The achieved modulation range is approximately 20% to 35% with and without liquid penetration in visible region (wavelength range from 450 nm to 650 nm).

Keywords: thermal oxidation process, SiO2 capillaries, optical window, light transmittance, image sensor, liquid penetration

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266 A Fast Chemiresistive H₂ Gas Sensor Based on Sputter Grown Nanocrystalline P-TiO₂ Thin Film Decorated with Catalytic Pd-Pt Layer on P-Si Substrate

Authors: Jyoti Jaiswal, Satyendra Mourya, Gaurav Malik, Ramesh Chandra

Abstract:

In the present work, we have fabricated and studied a resistive H₂ gas sensor based on Pd-Pt decorated room temperature sputter grown nanocrystalline porous titanium dioxide (p-TiO₂) thin film on porous silicon (p-Si) substrate for fast H₂ detection. The gas sensing performance of Pd-Pt/p-TiO₂/p-Si sensing electrode towards H₂ gas under low (10-500 ppm) detection limit and operating temperature regime (25-200 °C) was discussed. The sensor is highly sensitive even at room temperature, with response (Ra/Rg) reaching ~102 for 500 ppm H₂ in dry air and its capability of sensing H₂ concentrations as low as ~10 ppm was demonstrated. At elevated temperature of 200 ℃, the response reached more than ~103 for 500 ppm H₂. Overall the fabricated resistive gas sensor exhibited high selectivity, good sensing response, and fast response/recovery time with good stability towards H₂.

Keywords: sputtering, porous silicon (p-Si), TiO₂ thin film, hydrogen gas sensor

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265 Design Ultra Fast Gate Drive Board for Silicon Carbide MOSFET Applications

Authors: Syakirin O. Yong, Nasrudin A. Rahim, Bilal M. Eid, Buray Tankut

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The aim of this paper is to develop an ultra-fast gate driver for Silicon Carbide (SiC) based switching device applications such as AC/DC DC/AC converters. Wide bandgap semiconductors such as SiC switches are growing rapidly nowadays due to their numerous capabilities such as faster switching, higher power density and higher voltage level. Wide band-gap switches can work properly on high frequencies such 50-250 kHz which is very useful for many power electronic applications such as solar inverters. Increasing the frequency minimizes the output filter size and system complexity however, this causes huge spike between MOSFET’s drain and source leg which leads to the failure of MOSFET if the voltage rating is exceeded. This paper investigates and concludes the optimum design for a gate drive board for SiC MOSFET switches without causing spikes and noises.

Keywords: PV system, lithium-ion, charger, constant current, constant voltage, renewable energy

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264 Using the Timepix Detector at CERN Accelerator Facilities

Authors: Andrii Natochii

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The UA9 collaboration in the last two years has installed two different types of detectors to investigate the channeling effect in the bent silicon crystals with high-energy particles beam on the CERN accelerator facilities: Cherenkov detector CpFM and silicon pixel detector Timepix. In the current work, we describe the main performances of the Timepix detector operation at the SPS and H8 extracted beamline at CERN. We are presenting some detector calibration results and tuning. Our research topics also cover a cluster analysis algorithm for the particle hits reconstruction. We describe the optimal acquisition setup for the Timepix device and the edges of its functionality for the high energy and flux beam monitoring. The measurements of the crystal parameters are very important for the future bent crystal applications and needs a track reconstruction apparatus. Thus, it was decided to construct a short range (1.2 m long) particle telescope based on the Timepix sensors and test it at H8 SPS extraction beamline. The obtained results will be shown as well.

Keywords: beam monitoring, channeling, particle tracking, Timepix detector

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263 Characterization of Aluminium Alloy 6063 Hybrid Metal Matrix Composite by Using Stir Casting Method

Authors: Balwinder Singh

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The present research is a paper on the characterization of aluminum alloy-6063 hybrid metal matrix composites using three different reinforcement materials (SiC, red mud, and fly ash) through stir casting method. The red mud was used in solid form, and particle size range varies between 103-150 µm. During this investigation, fly ash is received from Guru Nanak Dev Thermal Plant (GNDTP), Bathinda. The study has been done by using Taguchi’s L9 orthogonal array by taking fraction wt.% (SiC 5%, 7.5%, and 10% and Red Mud and Fly Ash 2%, 4%, and 6%) as input parameters with their respective levels. The study of the mechanical properties (tensile strength, impact strength, and microhardness) has been done by using Analysis of Variance (ANOVA) with the help of MINITAB 17 software. It is revealed that silicon carbide is the most significant parameter followed by red mud and fly ash affecting the mechanical properties, respectively. The fractured surface morphology of the composites using Field Emission Scanning Electron Microscope (FESEM) shows that there is a good mixing of reinforcement particles in the matrix. Energy-dispersive X-ray spectroscopy (EDS) was performed to know the presence of the phases of the reinforced material.

Keywords: reinforcement, silicon carbide, fly ash, red mud

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262 Cell Adhesion, Morphology and Cytokine Expression of Synoviocytes Can Be Altered on Different Nano-Topographic Oxidized Silicon Nanosponges

Authors: Hung-Chih Hsu, Pey-Jium Chang, Ching-Hsein Chen, Jer-Liang Andrew Yeh

Abstract:

Osteoarthritis (OA) is a common disorder in rehabilitation clinic. The main characteristics include joint pain, localized tenderness and enlargement, joint effusion, cartilage destruction, loss of adhesion of perichondrium, synovium hyperplasia. Synoviocytes inflammation might be a cause of local tenderness and effusion. Inflammation cytokines might also play an important role in joint pain, cartilage destruction, decrease adhesion of perichondrium to the bone. Treatments of osteoarthritis include non-steroid anti-inflammation drugs (NSAID), glucosamine supplementation, hyaluronic acid, arthroscopic debridement, and total joint replacement. Total joint replacement is commonly used in patients with severe OA who failed respond to pharmacological treatment. However, some patients received surgery had serious adverse events, including instability of the implants due to insufficient adhesion to the adjacent bony tissue or synovial inflammation. We tried to develop ideal nano-topographic oxidized silicon nanosponges by using with various chemicals to produce thickness difference in nanometers in order to study more about the cell-environment interactions in vitro like the alterations of cell adhesion, morphology, extracellular matrix secretions in the pathogenesis of osteoarthritis. Cytokines studies like growth factor, reactive oxygen species, reactive inflammatory materials (Like nitrous oxide and prostaglandin E2), extracellular matrix (ECM) degradation enzymes, and synthesis of collagen will also be observed and discussed. Extracellular and intracellular expression transforming growth factor beta (TGF-β) will be studied by reverse transcription-polymerase chain reaction (RT-PCR). The degradation of ECM will be observed by the bioactivity ratio of matrix metalloproteinase (MMP) and tissue inhibitors of metalloproteinase by ELISA (Enzyme-linked immunosorbent assay). When rabbit synoviocytes were cultured on these nano-topographic structures, they demonstrate better cell adhesion rate, decreased expression of MMP-2,9 and PGE2, and increased expression of TGF-β when cultured in nano-topographic oxidized silicon nanosponges than in the planar oxidized silicon ones. These results show cell behavior, cytokine production can be influenced by physical characteristics from different nano-topographic structures. Our study demonstrates the possibility of manipulating cell behavior in these nano-topographic biomaterials.

Keywords: osteoarthritis, synoviocyte, oxidized silicon surfaces, reactive oxygen species

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261 Influence of Raw Material Composition on Microstructure and Mechanical Properties of Nodular Cast Iron

Authors: Alan Vaško, Juraj Belan, Lenka Hurtalová, Eva Tillová

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The aim of this study is to evaluate the influence of raw material composition on the microstructure, mechanical and fatigue properties and micromechanisms of failure of nodular cast iron. In order to evaluate the influence of charge composition, the structural analysis, mechanical and fatigue tests and micro fractographic analysis were carried out on specimens of ten melts with different charge compositions. The basic charge of individual melts was formed by a different ratio of pig iron and steel scrap and by different additive for regulation of chemical composition (silicon carbide or ferrosilicon). The results show differences in mechanical and fatigue properties, which are connected with the microstructure. SiC additive positively influences microstructure. Consequently, mechanical and fatigue properties of nodular cast iron are improved, especially in the melts with the higher ratio of steel scrap in the charge.

Keywords: nodular cast iron, silicon carbide, microstructure, mechanical properties

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260 Method and Experiment of Fabricating and Cutting the Burr for Y Shape Nanochannel

Authors: Zone-Ching Lin, Hao-Yuan Jheng, Shih-Hung Ma

Abstract:

The present paper proposes using atomic force microscopy (AFM) and the concept of specific down force energy (SDFE) to establish a method for fabricating and cutting the burr for Y shape nanochannel on silicon (Si) substrate. For fabricating Y shape nanochannel, it first makes the experimental cutting path planning for fabricating Y shape nanochannel until the fifth cutting layer. Using the constant down force by AFM and SDFE theory and following the experimental cutting path planning, the cutting depth and width of each pass of Y shape nanochannel can be predicted by simulation. The paper plans the path for cutting the burr at the edge of Y shape nanochannel. Then, it carries out cutting the burr along the Y nanochannel edge by using a smaller down force. The height of standing burr at the edge is required to be below the set value of 0.54 nm. The results of simulation and experiment of fabricating and cutting the burr for Y shape nanochannel is further compared.

Keywords: atomic force microscopy (AFM), nanochannel, specific down force energy (SDFE), Y shape, burr, silicon

Procedia PDF Downloads 405
259 Optimizing the Field Emission Performance of SiNWs-Based Heterostructures: Controllable Synthesis, Core-Shell Structure, 3D ZnO/Si Nanotrees and Graphene/SiNWs

Authors: Shasha Lv, Zhengcao Li

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Due to the CMOS compatibility, silicon-based field emission (FE) devices as potential electron sources have attracted much attention. The geometrical arrangement and dimensional features of aligned silicon nanowires (SiNWs) have a determining influence on the FE properties. We discuss a multistep template replication process of Ag-assisted chemical etching combined with polystyrene (PS) spheres to fabricate highly periodic and well-aligned silicon nanowires, then their diameter, aspect ratio and density were further controlled via dry oxidation and post chemical treatment. The FE properties related to proximity and aspect ratio were systematically studied. A remarkable improvement of FE propertiy was observed with the average nanowires tip interspace increasing from 80 to 820 nm. On the basis of adjusting SiNWs dimensions and morphology, addition of a secondary material whose properties complement the SiNWs could yield a combined characteristic. Three different nanoheterostructures were fabricated to control the FE performance, they are: NiSi/Si core-shell structures, ZnO/Si nanotrees, and Graphene/SiNWs. We successfully fabricated the high-quality NiSi/Si heterostructured nanowires with excellent conformality. First, nickle nanoparticles were deposited onto SiNWs, then rapid thermal annealing process were utilized to form NiSi shell. In addition, we demonstrate a new and simple method for creating 3D nanotree-like ZnO/Si nanocomposites with a spatially branched hierarchical structure. Compared with the as-prepared SiNRs and ZnO NWs, the high-density ZnO NWs on SiNRs have exhibited predominant FE characteristics, and the FE enhancement factors were attributed to band bending effect and geometrical morphology. The FE efficiency from flat sheet structure of graphene is low. We discussed an effective approach towards full control over the diameter of uniform SiNWs to adjust the protrusions of large-scale graphene sheet deposited on SiNWs. The FE performance regarding the uniformity and dimensional control of graphene protrusions supported on SiNWs was systematically clarified. Therefore, the hybrid SiNWs/graphene structures with protrusions provide a promising class of field emission cathodes.

Keywords: field emission, silicon nanowires, heterostructures, controllable synthesis

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258 Sensitivity Studies for a Pin Homojunction a-Si:H Solar Cell

Authors: Leila Ayat, Afak Meftah

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Amorphous-silicon alloys have great promise as low cost solar cell materials. They have excellent photo-conductivity and high optical absorption to sunlight. Now PIN a-Si:H based solar cells are widely used in power generation modules. However, to improve the performance of these cells further, a better fundamental under-standing of the factors limiting cell performance in the homo junction PIN structure is necessary. In this paper we discuss the sensitivity of light J-V characteristics to various device and material parameters in PIN homo junction solar cells. This work is a numerical simulation of the output parameters of a PIN a-Si:H solar cell under AM1.5 spectrum. These parameters are the short circuit current (Jsc), the open circuit voltage (Voc), the fill factor (FF), the conversion efficiency. The simulation was performed with SCAPS-1D software version 3.3 developed at ELIS in Belgium by Marc Burgelman et al. The obtained results are in agreement with experiment. In addition, the effect of the thickness, doping density, capture cross sections of the gap states and the band microscopic mobilities on the output parameters of the cell are also presented.

Keywords: amorphous silicon p-i-n junctions, thin film, solar cells, sensitivity

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257 Nanowire Sensor Based on Novel Impedance Spectroscopy Approach

Authors: Valeriy M. Kondratev, Ekaterina A. Vyacheslavova, Talgat Shugabaev, Alexander S. Gudovskikh, Alexey D. Bolshakov

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Modern sensorics imposes strict requirements on the biosensors characteristics, especially technological feasibility, and selectivity. There is a growing interest in the analysis of human health biological markers, which indirectly testifying the pathological processes in the body. Such markers are acids and alkalis produced by the human, in particular - ammonia and hydrochloric acid, which are found in human sweat, blood, and urine, as well as in gastric juice. Biosensors based on modern nanomaterials, especially low dimensional, can be used for this markers detection. Most classical adsorption sensors based on metal and silicon oxides are considered non-selective, because they identically change their electrical resistance (or impedance) under the action of adsorption of different target analytes. This work demonstrates a feasible frequency-resistive method of electrical impedance spectroscopy data analysis. The approach allows to obtain of selectivity in adsorption sensors of a resistive type. The method potential is demonstrated with analyzis of impedance spectra of silicon nanowires in the presence of NH3 and HCl vapors with concentrations of about 125 mmol/L (2 ppm) and water vapor. We demonstrate the possibility of unambiguous distinction of the sensory signal from NH3 and HCl adsorption. Moreover, the method is found applicable for analysis of the composition of ammonia and hydrochloric acid vapors mixture without water cross-sensitivity. Presented silicon sensor can be used to find diseases of the gastrointestinal tract by the qualitative and quantitative detection of ammonia and hydrochloric acid content in biological samples. The method of data analysis can be directly translated to other nanomaterials to analyze their applicability in the field of biosensory.

Keywords: electrical impedance spectroscopy, spectroscopy data analysis, selective adsorption sensor, nanotechnology

Procedia PDF Downloads 114
256 Synthesis of Low-Cost Porous Silicon Carbide Foams from Renewable Sources

Authors: M. A. Bayona, E. M. Cordoba, V. R. Guiza

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Highly porous carbon-based foams are used in a wide range of industrial applications, which include absorption, catalyst supports, thermal insulation, and biomaterials, among others. Particularly, silicon carbide (SiC) based foams have shown exceptional potential for catalyst support applications, due to their chemical inertness, large frontal area, low resistance to flow, low-pressure drop, as well as high resistance to temperature and corrosion. These properties allow the use of SiC foams in harsh environments with high durability. Commonly, SiC foams are fabricated from polysiloxane, SiC powders and phenolic resins, which can be costly or highly toxic to the environment. In this work, we propose a low-cost method for the fabrication of highly porous, three-dimensional SiC foams via template replica, using recycled polymeric sponges as sacrificial templates. A sucrose-based resin combined with a Si-containing pre-ceramic polymer was used as the precursor. Polymeric templates were impregnated with the precursor solution, followed by thermal treatment at 1500 °C under an inert atmosphere. Several synthesis parameters, such as viscosity and composition of the precursor solution (Si: Sucrose molar ratio), and the porosity of the template, were evaluated in terms of their effect on the morphology, composition and mechanical resistance of the resulting SiC foams. The synthesized composite foams exhibited a highly porous (50-90%) and interconnected structure, containing 30-90% SiC with a mechanical compressive strength between 0.01-0.1 MPa. The methodology employed here allowed the fabrication of foams with a varied concentration of SiC and with morphological and mechanical properties that contribute to the development of materials of high relevance in the industry, while using low-cost, renewable sources such as table sugar, and providing a recycling alternative for polymeric sponges.

Keywords: catalyst support, polymer replica technique, reticulated porous ceramics, silicon carbide

Procedia PDF Downloads 123
255 Fabrication of Hollow Germanium Spheres by Dropping Method

Authors: Kunal D. Bhagat, Truong V. Vu, John C. Wells, Hideyuki Takakura, Yu Kawano, Fumio Ogawa

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Hollow germanium alloy quasi-spheres of diameters 1 to 2 mm with a relatively smooth inner and outer surface have been produced. The germanium was first melted at around 1273 K and then exuded from a coaxial nozzle into an inert atmosphere by argon gas supplied to the inner nozzle. The falling spheres were cooled by water spray and collected in a bucket. The spheres had a horn type of structure on the outer surface, which might be caused by volume expansion induced by the density difference between solid and gas phase. The frequency of the sphere formation was determined from the videos to be about 133 Hz. The outer diameter varied in the range of 1.3 to 1.8 mm with a wall thickness in the range of 0.2 to 0.5 mm. Solid silicon spheres are used for spherical silicon solar cells (S₃CS), which have various attractive features. Hollow S₃CS promise substantially higher energy conversion efficiency if their wall thickness can be kept to 0.1–0.2 mm and the inner surface can be passivated. Our production of hollow germanium spheres is a significant step towards the production of hollow S₃CS with, we hope, higher efficiency and lower material cost than solid S₃CS.

Keywords: hollow spheres, semiconductor, compound jet, dropping method

Procedia PDF Downloads 208
254 The Investigation of the Impact of Process and Location Parameters in Warpage Study of Semiconductor Packages

Authors: Wheyming Song, Ssu-Ping Lin

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The primary advantage of package-on-package (PoP) packaging is that since it has less volume, it weighs less. But this is also related to its principal drawback, which is warpage. This research investigates how PoP package warpage patterns are affected by assembling process parameters, including substrate temperature, injection speed, injection temperature, and compound forces. We also investigate how warpage patterns are affected by the location of the silicon chip. The methodologies used in this research are design of experiment and warpage simulation via ANSYS. We propose a regression model to predict the warpage value as a function of substrate temperature, injection speed, injection temperature, and compound forces. Our results show that interaction effects exist between substrate temperature and compound forces and between injection speed and injection temperature. Therefore, determining the optimal values for substrate temperature, compound forces, injection speed, and injection temperature cannot be done individually. Also, our results show that the warpage patterns based on the location of silicon chips can be classified into 11 groups, with the largest warpage occurring at the left-most and right-most sides.

Keywords: package-on-package, warpage, design of experiment, simulation

Procedia PDF Downloads 306