Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3
Search results for: Khimmatali Nomozovich Juraev
3 Research of the Activation Energy of Conductivity in P-I-N SiC Structures Fabricated by Doping with Aluminum Using the Low-Temperature Diffusion Method
Authors: Ilkham Gafurovich Atabaev, Khimmatali Nomozovich Juraev
Abstract:
The activation energy of conductivity in p-i-n SiC structures fabricated by doping with Aluminum using the new low-temperature diffusion method is investigated. In this method, diffusion is stimulated by the flux of carbon and silicon vacancies created by surface oxidation. The activation energy of conductivity in the p - layer is 0.25 eV and it is close to the ionization energy of Aluminum in 4H-SiC from 0.21 to 0.27 eV for the hexagonal and cubic positions of aluminum in the silicon sublattice for weakly doped crystals. The conductivity of the i-layer (measured in the reverse biased diode) shows 2 activation energies: 0.02 eV and 0.62 eV. Apparently, the 0.62 eV level is a deep trap level and it is a complex of Aluminum with a vacancy. According to the published data, an analogous level system (with activation energies of 0.05, 0.07, 0.09 and 0.67 eV) was observed in the ion Aluminum doped 4H-SiC samples.Keywords: activation energy, aluminum, low temperature diffusion, SiC
Procedia PDF Downloads 2742 Effects of Magnetic Field on 4H-SiC P-N Junctions
Authors: Khimmatali Nomozovich Juraev
Abstract:
Silicon carbide is one of the promising materials with potential applications in electronic devices using high power, high frequency and high electric field. Currently, silicon carbide is used to manufacture high power and frequency diodes, transistors, radiation detectors, light emitting diodes (LEDs) and other functional devices. In this work, the effects of magnetic field on p-n junctions based on 4H-SiC were experimentally studied. As a research material, monocrystalline silicon carbide wafers (Cree Research, Inc., USA) with relatively few growth defects grown by physical vapor transport (PVT) method were used: Nd dislocations 104 cm², Nm micropipes ~ 10–10² cm-², thickness ~ 300-600 μm, surface ~ 0.25 cm², resistivity ~ 3.6–20 Ωcm, the concentration of background impurities Nd − Na ~ (0.5–1.0)×1017cm-³. The initial parameters of the samples were determined on a Hall Effect Measurement System HMS-7000 (Ecopia) measuring device. Diffusing Ni nickel atoms were covered to the silicon surface of silicon carbide in a Universal Vacuum Post device at a vacuum of 10-⁵ -10-⁶ Torr by thermal sputtering and kept at a temperature of 600-650°C for 30 minutes. Then Ni atoms were diffused into the silicon carbide 4H-SiC sample at a temperature of 1150-1300°C by low temperature diffusion method in an air atmosphere, and the effects of the magnetic field on the I-V characteristics of the samples were studied. I-V characteristics of silicon carbide 4H-SiCKeywords: 4H-SiC, diffusion Ni, effects of magnetic field, I-V characteristics
Procedia PDF Downloads 911 The Complexity of Testing Cryptographic Devices on Input Faults
Authors: Alisher Ikramov, Gayrat Juraev
Abstract:
The production of logic devices faces the occurrence of faults during manufacturing. This work analyses the complexity of testing a special type of logic device on inverse, adhesion, and constant input faults. The focus of this work is on devices that implement cryptographic functions. The complexity values for the general case faults and for some frequently occurring subsets were determined and proved in this work. For a special case, when the length of the text block is equal to the length of the key block, the complexity of testing is proven to be asymptotically half the complexity of testing all logic devices on the same types of input faults.Keywords: complexity, cryptographic devices, input faults, testing
Procedia PDF Downloads 219