Search results for: threshold stress
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1382

Search results for: threshold stress

1382 Threshold Stress of the Soil Subgrade Evaluation for Highway Formations

Authors: Elsa Eka Putri, N.S.V Kameswara Rao, M. A. Mannan

Abstract:

The objective of this study is to evaluate the threshold stress of the clay with sand subgrade soil. Threshold stress can be defined as the stress level above which cyclic loading leads to excessive deformation and eventual failure. The thickness determination of highways formations using the threshold stress approach is a more realistic assessment of the soil behaviour because it is subjected to repeated loadings from moving vehicles. Threshold stress can be evaluated by plastic strain criterion, which is based on the accumulated plastic strain behaviour during cyclic loadings [1]. Several conditions of the all-round pressure the subgrade soil namely, zero confinement, low all-round pressure and high all-round pressure are investigated. The threshold stresses of various soil conditions are determined. Threshold stress of the soil are 60%, 31% and 38.6% for unconfined partially saturated sample, low effective stress saturated sample, high effective stress saturated sample respectively.

Keywords: threshold stress, cyclic loading, pore water pressure.

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1381 Noise-Improved Signal Detection in Nonlinear Threshold Systems

Authors: Youguo Wang, Lenan Wu

Abstract:

We discuss the signal detection through nonlinear threshold systems. The detection performance is assessed by the probability of error Per . We establish that: (1) when the signal is complete suprathreshold, noise always degrades the signal detection both in the single threshold system and in the parallel array of threshold devices. (2) When the signal is a little subthreshold, noise degrades signal detection in the single threshold system. But in the parallel array, noise can improve signal detection, i.e., stochastic resonance (SR) exists in the array. (3) When the signal is predominant subthreshold, noise always can improve signal detection and SR always exists not only in the single threshold system but also in the parallel array. (4) Array can improve signal detection by raising the number of threshold devices. These results extend further the applicability of SR in signal detection.

Keywords: Probability of error, signal detection, stochasticresonance, threshold system.

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1380 Multi-threshold Approach for License Plate Recognition System

Authors: Siti Norul Huda Sheikh Abdullah, Farshid Pirahan Siah, Nor Hanisah Haji Zainal Abidin, Shahnorbanun Sahran

Abstract:

The objective of this paper is to propose an adaptive multi threshold for image segmentation precisely in object detection. Due to the different types of license plates being used, the requirement of an automatic LPR is rather different for each country. The proposed technique is applied on Malaysian LPR application. It is based on Multi Layer Perceptron trained by back propagation. The proposed adaptive threshold is introduced to find the optimum threshold values. The technique relies on the peak value from the graph of the number object versus specific range of threshold values. The proposed approach has improved the overall performance compared to current optimal threshold techniques. Further improvement on this method is in progress to accommodate real time system specification.

Keywords: Multi-threshold approach, license plate recognition system.

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1379 Modeling of Steady State Creep in Thick-Walled Cylinders under Internal Pressure

Authors: Tejeet Singh, Ishavneet Singh

Abstract:

The present study focused on carrying out the creep analysis in an isotropic thick-walled composite cylindrical pressure vessel composed of aluminum matrix reinforced with silicon-carbide in particulate form. The creep behavior of the composite material has been described by the threshold stress based creep law. The values of stress exponent appearing in the creep law were selected as 3, 5 and 8. The constitutive equations were developed using well known von-Mises yield criteria. Models were developed to find out the distributions of creep stress and strain rate in thick-walled composite cylindrical pressure vessels under internal pressure. In order to obtain the stress distributions in the cylinder, the equilibrium equation of the continuum mechanics and the constitutive equations are solved together. It was observed that the radial stress, tangential stress and axial stress increases along with the radial distance. The cross-over was also obtained almost at the middle region of cylindrical vessel for tangential and axial stress for different values of stress exponent. The strain rates were also decreasing in nature along the entire radius.

Keywords: Steady state creep, composite, cylinder, pressure.

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1378 Threshold Submergence of Flow over PK Weirs

Authors: A. Javaheri, A. R. Kabiri-Samani

Abstract:

In this study an extensive experimental research is carried out to develop a better understanding of the effects of Piano Key (PK) weir geometry on weir flow threshold submergence. Experiments were conducted in a 12 m long, 0.4 m wide and 0.7 m deep rectangular glass wall flume. The main objectives were to investigate the effect of the PK weir geometries including the weir length, weir height, inlet-outlet key widths, upstream and downstream apex overhangs, and slopped floors on threshold submergence and study the hydraulic flow characteristics. From the experimental results, a practical formula is proposed to evaluate the flow threshold submergence over PK weirs.

Keywords: Model experimentation, flow characteristics, Piano Key weir, threshold submergence.

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1377 A New Shock Model for Systems Subject to Random Threshold Failure

Authors: A. Rangan, A. Tansu

Abstract:

This paper generalizes Yeh Lam-s shock model for renewal shock arrivals and random threshold. Several interesting statistical measures are explicitly obtained. A few special cases and an optimal replacement problem are also discussed.

Keywords: shock model, optimal replacement, random threshold, shocks.

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1376 Threshold Concepts in TESOL: A Thematic Analysis of Disciplinary Guiding Principles

Authors: Neil Morgan

Abstract:

The notion of Threshold Concepts has offered a fertile new perspective on the transformative effects of mastery of particular concepts on student understanding of subject matter and their developing identities as inductees into disciplinary discourse communities. Only by successfully traversing essential knowledge thresholds can neophytes achieve the more sophisticated understandings of subject matter possessed by mature members of a discipline. This paper uses thematic analysis of disciplinary guiding principles to identify nine candidate Threshold Concepts that appear to underpin effective TESOL practice. The relationship between these candidate TESOL Threshold Concepts, TESOL principles, and TESOL instructional techniques appears to be amenable to a schematic representation based on superordinate categories of TESOL practitioner concern and, as such, offers an alternative to the view of Threshold Concepts as a privileged subset of disciplinary core concepts. The paper concludes by exploring the potential of a Threshold Concepts framework to productively inform TESOL initial teacher education (ITE) and in-service education and training (INSET).

Keywords: TESOL, threshold concepts, TESOL principles, TESOL ITE/INSET, community of practice.

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1375 C-V Characterization and Analysis of Temperature and Channel Thickness Effects on Threshold Voltage of Ultra-thin SOI MOSFET by Self-Consistent Model

Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

Abstract:

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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1374 Shot Detection Using Modified Dugad Model

Authors: Lenka Krulikovská, Jaroslav Polec

Abstract:

In this paper we present a modification to existed model of threshold for shot cut detection, which is able to adapt itself to the sequence statistics and operate in real time, because it use for calculation only previously evaluated frames. The efficiency of proposed modified adaptive threshold scheme was verified through extensive test experiment with several similarity metrics and achieved results were compared to the results reached by the original model. According to results proposed threshold scheme reached higher accuracy than existed original model.

Keywords: Abrupt cut, shot cut detection, adaptive threshold.

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1373 Location of Vortex Formation Threshold at Suction Inlets near Ground Planes – Ascending and Descending Conditions

Authors: Wei Hua Ho

Abstract:

Vortices can develop in intakes of turbojet and turbo fan aero engines during high power operation in the vicinity of solid surfaces. These vortices can cause catastrophic damage to the engine. The factors determining the formation of the vortex include both geometric dimensions as well as flow parameters. It was shown that the threshold at which the vortex forms or disappears is also dependent on the initial flow condition (i.e. whether a vortex forms after stabilised non vortex flow or vice-versa). A computational fluid dynamics study was conducted to determine the difference in thresholds between the two conditions. This is the first reported numerical investigation of the “memory effect". The numerical results reproduce the phenomenon reported in previous experimental studies and additional factors, which had not been previously studied, were investigated. They are the rate at which ambient velocity changes and the initial value of ambient velocity. The former was found to cause a shift in the threshold but not the later. It was also found that the varying condition thresholds are not symmetrical about the neutral threshold. The vortex to no vortex threshold lie slightly further away from the neutral threshold compared to the no vortex to vortex threshold. The results suggests that experimental investigation of vortex formation threshold performed either in vortex to no vortex conditions, or vice versa, solely may introduce mis-predictions greater than 10%.

Keywords: Jet Engine Test Cell, Unsteady flow, Inlet Vortex

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1372 Linear Pocket Profile based Threshold Voltage Model for sub-100 nm n-MOSFET

Authors: Muhibul Haque Bhuyan, Quazi Deen Mohd Khosru

Abstract:

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.

Keywords: Linear pocket profile, pocket implantation, nMOSFET, threshold voltage, short channel effect (SCE), reverse short channeleffect (RSCE).

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1371 Continuous Threshold Prey Harvesting in Predator-Prey Models

Authors: Jonathan Bohn, Jorge Rebaza, Kaitlin Speer

Abstract:

The dynamics of a predator-prey model with continuous threshold policy harvesting functions on the prey is studied. Theoretical and numerical methods are used to investigate boundedness of solutions, existence of bionomic equilibria, and the stability properties of coexistence equilibrium points and periodic orbits. Several bifurcations as well as some heteroclinic orbits are computed.

Keywords: Predator-prey models, threshold harvesting, dynamicalsystems

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1370 Steady State Creep Behavior of Functionally Graded Thick Cylinder

Authors: Tejeet Singh, Harmanjit Singh

Abstract:

Creep behavior of thick-walled functionally graded cylinder consisting of AlSiC and subjected to internal pressure and high temperature has been analyzed. The functional relationship between strain rate with stress can be described by the well known threshold stress based creep law with a stress exponent of five. The effect of imposing non-linear particle gradient on the distribution of creep stresses in the thick-walled functionally graded composite cylinder has been investigated. The study revealed that for the assumed non-linear particle distribution, the radial stress decreases throughout the cylinder, whereas the tangential, axial and effective stresses have averaging effect. The strain rates in the functionally graded composite cylinder could be reduced to significant extent by employing non-linear gradient in the distribution of reinforcement.

Keywords: Functionally Graded Material, Pressure, Steady State Creep, Thick-Cylinder.

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1369 Despiking of Turbulent Flow Data in Gravel Bed Stream

Authors: Ratul Das

Abstract:

The present experimental study insights the decontamination of instantaneous velocity fluctuations captured by Acoustic Doppler Velocimeter (ADV) in gravel-bed streams to ascertain near-bed turbulence for low Reynolds number. The interference between incidental and reflected pulses produce spikes in the ADV data especially in the near-bed flow zone and therefore filtering the data are very essential. Nortek’s Vectrino four-receiver ADV probe was used to capture the instantaneous three-dimensional velocity fluctuations over a non-cohesive bed. A spike removal algorithm based on the acceleration threshold method was applied to note the bed roughness and its influence on velocity fluctuations and velocity power spectra in the carrier fluid. The velocity power spectra of despiked signals with a best combination of velocity threshold (VT) and acceleration threshold (AT) are proposed which ascertained velocity power spectra a satisfactory fit with the Kolmogorov “–5/3 scaling-law” in the inertial sub-range. Also, velocity distributions below the roughness crest level fairly follows a third-degree polynomial series.

Keywords: Acoustic Doppler Velocimeter, gravel-bed, spike removal, Reynolds shear stress, near-bed turbulence, velocity power spectra.

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1368 The Interaction between Hydrogen and Surface Stress in Stainless Steel

Authors: O. Takakuwa, Y. Mano, H. Soyama

Abstract:

This paper reveals the interaction between hydrogen and surface stress in austenitic stainless steel by X-ray diffraction stress measurement and thermal desorption analysis before and after being charged with hydrogen. The surface residual stress was varied by surface finishing using several disc polishing agents. The obtained results show that the residual stress near surface had a significant effect on hydrogen absorption behavior, that is, tensile residual stress promoted the hydrogen absorption and compressive one did opposite. Also, hydrogen induced equi-biaxial stress and this stress has a linear correlation with hydrogen content.

Keywords: Hydrogen embrittlement, Residual stress, Surface finishing, Stainless steel.

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1367 Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device

Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (VTH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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1366 The Syllabic Scrutiny of Word Stress in Najdi Saudi Arabic

Authors: Mohammad AL Amro

Abstract:

This study will provide a brief description of the stress in Najdi Arabic dialect as well as Modern Standard Arabic. Beyond the analysis of stress patterns, this paper will also attempt to deal with two important phenomena that affect stress, namely epenthesis/insertion, vowel shortening, and consonant (the glottal stop) deletion.

Keywords: Epenthesis, Najd, stress, vowel shortening.

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1365 The Temperature Range in the Simulation of Residual Stress and Hot Tearing During Investment Casting

Authors: Saeid Norouzi, Ali Shams, Hassan Farhangi, Alireza Darvish

Abstract:

Hot tear cracking and residual stress are two different consequences of thermal stress both of which can be considered as casting problem. The purpose of the present study is simulation of the effect of casting shape characteristic on hot tearing and residual stress. This study shows that the temperature range for simulation of hot tearing and residual stress are different. In this study, in order to study the development of thermal stress and to predict the hot tearing and residual stress of shaped casting, MAGMASOFT simulation program was used. The strategy of this research was the prediction of hot tear location using pinpointing hot spot and thermal stress concentration zones. The results shows that existing of stress concentration zone increases the hot tearing probability and consequently reduces the amount of remaining residual stress in casting parts.

Keywords: Hot tearing, residual stress, simulation, investment casting.

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1364 Effect of Surface Stress on the Deformation around a Nanosized Elliptical Hole: a Finite Element Study

Authors: Weifeng Wang, Xianwei Zeng, Jianping Ding

Abstract:

When the characteristic length of an elastic solid is down to the nanometer level, its deformation behavior becomes size dependent. Surface energy /surface stress have recently been applied to explain such dependency. In this paper, the effect of strain-independent surface stress on the deformation of an isotropic elastic solid containing a nanosized elliptical hole is studied by the finite element method. Two loading cases are considered, in the first case, hoop stress along the rim of the elliptical hole induced by pure surface stress is studied, in the second case, hoop stress around the elliptical opening under combined remote tension and surface stress is investigated. It has been shown that positive surface stress induces compressive hoop stress along the hole, and negative surface stress has opposite effect, maximum hoop stress occurs near the major semi-axes of the ellipse. Under combined loading of remote tension and surface stress, stress concentration around the hole can be either intensified or weakened depending on the sign of the surface stress.

Keywords: Surface stress, finite element method, stress concentration, nanosized elliptical hole

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1363 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: Threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation.

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1362 Fuzzy based Security Threshold Determining for the Statistical En-Route Filtering in Sensor Networks

Authors: Hae Young Lee, Tae Ho Cho

Abstract:

In many sensor network applications, sensor nodes are deployed in open environments, and hence are vulnerable to physical attacks, potentially compromising the node's cryptographic keys. False sensing report can be injected through compromised nodes, which can lead to not only false alarms but also the depletion of limited energy resource in battery powered networks. Ye et al. proposed a statistical en-route filtering scheme (SEF) to detect such false reports during the forwarding process. In this scheme, the choice of a security threshold value is important since it trades off detection power and overhead. In this paper, we propose a fuzzy logic for determining a security threshold value in the SEF based sensor networks. The fuzzy logic determines a security threshold by considering the number of partitions in a global key pool, the number of compromised partitions, and the energy level of nodes. The fuzzy based threshold value can conserve energy, while it provides sufficient detection power.

Keywords: Fuzzy logic, security, sensor network.

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1361 Performance Analysis of an Adaptive Threshold Hybrid Double-Dwell System with Antenna Diversity for Acquisition in DS-CDMA Systems

Authors: H. Krouma, M. Barkat, K. Kemih, M. Benslama, Y. Yacine

Abstract:

In this paper, we consider the analysis of the acquisition process for a hybrid double-dwell system with antenna diversity for DS-CDMA (direct sequence-code division multiple access) using an adaptive threshold. Acquisition systems with a fixed threshold value are unable to adapt to fast varying mobile communications environments and may result in a high false alarm rate, and/or low detection probability. Therefore, we propose an adaptively varying threshold scheme through the use of a cellaveraging constant false alarm rate (CA-CFAR) algorithm, which is well known in the field of radar detection. We derive exact expressions for the probabilities of detection and false alarm in Rayleigh fading channels. The mean acquisition time of the system under consideration is also derived. The performance of the system is analyzed and compared to that of a hybrid single dwell system.

Keywords: Adaptive threshold, hybrid double-dwell system, CA-CFAR algorithm, DS-CDMA.

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1360 Dominant Correlation Effects in Atomic Spectra

Authors: Hubert Klar

Abstract:

High double excitation of two-electron atoms has been investigated using hyperpherical coordinates within a modified adiabatic expansion technique. This modification creates a novel fictitious force leading to a spontaneous exchange symmetry breaking at high double excitation. The Pauli principle must therefore be regarded as approximation valid only at low excitation energy. Threshold electron scattering from high Rydberg states shows an unexpected time reversal symmetry breaking. At threshold for double escape we discover a broad (few eV) Cooper pair.

Keywords: Correlation, resonances, threshold ionization, Cooper pair.

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1359 Bias Stability of a-IGZO TFT and a new Shift-Register Design Suitable for a-IGZO TFT

Authors: Young Wook Lee, Sun-Jae Kim, Soo-Yeon Lee, Moon-Kyu Song, Woo-Geun Lee Min-Koo Han

Abstract:

We have fabricated a-IGZO TFT and investigated the stability under positive DC and AC bias stress. The threshold voltage of a-IGZO TFT shifts positively under those biases, and that reduces on-current. For this reason, conventional shift-register circuit employing TFTs which stressed by positive bias will be unstable, may do not work properly. We have designed a new 6-transistor shift-register, which has less transistors than prior circuits. The TFTs of the proposed shift-register are not suffering from positive DC or AC stress, mainly kept unbiased. Despite the compact design, the stable output signal was verified through the SPICE simulation even under RC delay of clock signal.

Keywords: Indium Gallium Zinc Oxide (IGZO), Thin FilmTransistor (TFT), shift-register

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1358 Automatic Adjustment of Thresholds via Closed-Loop Feedback Mechanism for Solder Paste Inspection

Authors: Chia-Chen Wei, Pack Hsieh, Jeffrey Chen

Abstract:

Surface Mount Technology (SMT) is widely used in the area of the electronic assembly in which the electronic components are mounted to the surface of the printed circuit board (PCB). Most of the defects in the SMT process are mainly related to the quality of solder paste printing. These defects lead to considerable manufacturing costs in the electronics assembly industry. Therefore, the solder paste inspection (SPI) machine for controlling and monitoring the amount of solder paste printing has become an important part of the production process. So far, the setting of the SPI threshold is based on statistical analysis and experts’ experiences to determine the appropriate threshold settings. Because the production data are not normal distribution and there are various variations in the production processes, defects related to solder paste printing still occur. In order to solve this problem, this paper proposes an online machine learning algorithm, called the automatic threshold adjustment (ATA) algorithm, and closed-loop architecture in the SMT process to determine the best threshold settings. Simulation experiments prove that our proposed threshold settings improve the accuracy from 99.85% to 100%.

Keywords: Big data analytics, Industry 4.0, SPI threshold setting, surface mount technology.

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1357 Interspecific Variation in Heat Stress Tolerance and Oxidative Damage among 15 C3 Species

Authors: Wagdi S. Soliman, Shu-ichi Sugiyama

Abstract:

The C3 plants are frequently suffering from exposure to high temperature stress which limits the growth and yield of these plants. This study seeks to clarify the physiological mechanisms of heat tolerance in relation to oxidative stress in C3 species. Fifteen C3 species were exposed to prolonged moderately high temperature stress 36/30°C for 40 days in a growth chamber. Chlorophyll fluorescence (Fv/Fm) showed great difference among species at 40 days of the stress. The species showed decreases in Fv/Fm and increases in malondialdehyde (MDA) content under stress condition as well as negative correlation between Fv/Fm and MDA (r = -0.61*) at 40 days of the stress. Hydrogen peroxide (H2O2) content before and after stress in addition to its response under stress showed great differences among species. The results suggest that the difference in heat tolerance among C3 species is closely associated with the ability to suppress oxidative damage but not with the content of reactive oxygen species (ROS) which is regulated by complex network.

Keywords: C3 species, Fv/Fm, heat stress, oxidative stress.

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1356 Determining of Threshold Levels of Burst by Burst AQAM/CDMA in Slow Rayleigh Fading Environments

Authors: F. Nejadebrahimi, M. ArdebiliPour

Abstract:

In this paper, we are going to determine the threshold levels of adaptive modulation in a burst by burst CDMA system by a suboptimum method so that the above method attempts to increase the average bit per symbol (BPS) rate of transceiver system by switching between the different modulation modes in variable channel condition. In this method, we choose the minimum values of average bit error rate (BER) and maximum values of average BPS on different values of average channel signal to noise ratio (SNR) and then calculate the relative threshold levels of them, so that when the instantaneous SNR increases, a higher order modulation be employed for increasing throughput and vise-versa when the instantaneous SNR decreases, a lower order modulation be employed for improvement of BER. In transmission step, by this adaptive modulation method, in according to comparison between obtained estimation of pilot symbols and a set of above suboptimum threshold levels, above system chooses one of states no transmission, BPSK, 4QAM and square 16QAM for modulation of data. The expected channel in this paper is a slow Rayleigh fading.

Keywords: AQAM, burst, BER, BPS, CDMA, threshold.

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1355 Theoretical Considerations of the Influence of Mechanical Uniaxial Stress on Pixel Readout Circuits

Authors: Georgios C. Dogiamis, Bedrich J. Hosticka, Anton Grabmaier

Abstract:

In this work the effects of uniaxial mechanical stress on a pixel readout circuit are theoretically analyzed. It is the effects of mechanical stress on the in-pixel transistors do not arise at the output, when a correlated double sampling circuit is used. However, mechanical stress effects on the photodiode will directly appear at the readout chain output. Therefore, compensation techniques are needed to overcome this situation. Moreover simulation technique of mechanical stress is proposed and diverse layout as well as design recommendations are put forward, in order to minimize stress related effects on the output of a circuit. he shown, that wever, Moreover, a out

Keywords: mechanical uniaxial stress, pixel readout circuit

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1354 Corrosion Fatigue Crack Growth Studies in Ni-Cr-Mn Steel

Authors: Chinnaiah Madduri, Raghu V. Prakash

Abstract:

This paper presents the results of corrosion fatigue crack growth behaviour of a Ni-Cr-Mn steel commonly used in marine applications. The effect of mechanical variables such as frequency and load ratio on fatigue crack growth rate at various stages has been studied using compact tension (C(T)) specimens along the rolling direction of steel plate under 3.5% saturated NaCl aqueous environment. The significance of crack closure on corrosion fatigue, and the validity of Elber-s empirical linear crack closure model with the ASTM compliance offset method have been examined. Fatigue crack growth rate is higher and threshold stress intensities are lower in aqueous environment compared to the lab air conditions. It is also observed that the crack growth rate increases at lower frequencies. The higher stress ratio promotes the crack growth. The effect of oxidization and corrosion pit formation is very less as the stress ratio is increased. It is observed that as stress ratios are increased, the Elber-s crack closure model agrees well with the crack closure estimated by the ASTM compliance offset method for tests conducted at 5Hz frequency compared to tests conducted at 1Hz in corrosive environment.

Keywords: Corrosion fatigue, oxide induced crack closure, Elber's crack closure, ASTM compliance offset method.

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1353 Determining the Minimum Threshold for the Functional Relatedness of Inner-Outer Class

Authors: Sim Hui Tee, Rodziah Atan, Abdul Azim Abd Ghani

Abstract:

Inner class is a specialized class that defined within a regular outer class. It is used in some programming languages such as Java to carry out the task which is related to its outer class. The functional relatedness between inner class and outer class is always the main concern of defining an inner class. However, excessive use of inner class could sabotage the class cohesiveness. In addition, excessive inner class leads to the difficulty of software maintenance and comprehension. Our research aims at determining the minimum threshold for the functional relatedness of inner-outer class. Such minimum threshold is a guideline for removing or relocating the excessive inner class. Our research provides a feasible way for software developers to define inner classes which are functionally related to the outer class.

Keywords: Cohesion, functional relatedness of inner-outer class, inner class.

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