Search results for: diluted agnetic semiconductors
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 299

Search results for: diluted agnetic semiconductors

299 Cr Induced Magnetization in Zinc-Blende ZnO-Based Diluted Magnetic Semiconductors

Authors: Bakhtiar Ul Haq, R. Ahmed, A. Shaari, Mazmira Binti Mohamed, Nisar Ali

Abstract:

The capability of exploiting the electronic charge and spin properties simultaneously in a single material has made diluted magnetic semiconductors (DMS) remarkable in the field of spintronics. We report the designing of DMS based on zinc-blend ZnO doped with Cr impurity. The full potential linearized augmented plane wave plus local orbital FP-L(APW+lo) method in density functional theory (DFT) has been adapted to carry out these investigations. For treatment of exchange and correlation energy, generalized gradient approximations have been used. Introducing Cr atoms in the matrix of ZnO has induced strong magnetic moment with ferromagnetic ordering at stable ground state. Cr:ZnO was found to favor the short range magnetic interaction that reflect the tendency of Cr clustering. The electronic structure of ZnO is strongly influenced in the presence of Cr impurity atoms where impurity bands appear in the band gap.

Keywords: ZnO, density functional theory, diluted agnetic semiconductors, ferromagnetic materials, FP-L(APW+lo)

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298 Calculation Of Energy Gap Of (Ga,Mn)As Diluted Magnetic Semiconductor From The Eight-Band k.p Model

Authors: Khawlh A. Alzubaidi, Khadijah B. Alziyadi, Amor M. Alsayari

Abstract:

Now a days (Ga, Mn) is one of the most extensively studied and best understood diluted magnetic semiconductors. Also, the study of (Ga, Mn)As is a fervent research area since it allows to explore of a variety of novel functionalities and spintronics concepts that could be implemented in the future. In this work, we will calculate the energy gap of (Ga, Mn)As using the eight-band model. In the Hamiltonian, the effects of spin-orbit, spin-splitting, and strain will be considered. The dependence of the energy gap on Mn content, and the effect of the strain, which is varied continuously from tensile to compressive, will be studied. Finally, analytical expressions for the (Ga, Mn)As energy band gap, taking into account both parameters (Mn concentration and strain), will be provided.

Keywords: energy gap, diluted magnetic semiconductors, k.p method, strain

Procedia PDF Downloads 91
297 Full-Potential Investigation of the Electronic and Magnetic Properties of CdCoTe and CdMnTe Diluted Magnetic Semiconductors

Authors: A.Zitouni, S.Bentata, B.Bouadjemi, T.Lantri, W. Benstaali, Z.Aziz, S.Cherid

Abstract:

We investigate the structural, electronic and magnetic properties of the diluted magnetic semiconductors (DMSs) CdCoTe and CdMnTe in the zinc blende phase with 25% of Co and Mn. The calculations are performed by the recent ab initio full potential augmented plane waves (FP_L/APW) method within the spin polarized density-functional theory (DFT) and the generalized gradient approximation GGA. Structural properties are determined from the total energy calculations and we found that these compounds are stable in the ferromagnetic phase. We discuss the electronic structures, total and partial densities of states and total magnetic moments. The calculated densities of states presented in this study identify the half-metallic of CdCoTe and CdMnTe.

Keywords: electronic structure, half-metallic, magnetic moment, total and partial densities of states

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296 Band Structure Computation of GaMnAs Using the Multiband k.p Theory

Authors: Khadijah B. Alziyadi, Khawlh A. Alzubaidi, Amor M. Alsayari

Abstract:

Recently, GaMnAs diluted magnetic semiconductors(DMSs) have received considerable attention because they combine semiconductor and magnetic properties. GaMnAs has been used as a model DMS and as a test bed for many concepts and functionalities of spintronic devices. In this paper, a theoretical study on the band structure ofGaMnAswill be presented. The model that we used in this study is the 8-band k.p methodwherespin-orbit interaction, spin splitting, and strain are considered. The band structure of GaMnAs will be calculated in different directions in the reciprocal space. The effect of manganese content on the GaMnAs band structure will be discussed. Also, the influence of strain, which varied continuously from tensile to compressive, on the different bands will be studied.

Keywords: band structure, diluted magnetic semiconductor, k.p method, strain

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295 Spin-Polarized Investigation of Ferromagnetism on Magnetic Semiconductors MnxCa1-xS in the Rock-salt Phase

Authors: B. Ghebouli, M. A. Ghebouli, H. Choutri, M. Fatmi, L. Louail

Abstract:

The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors MnxCa1-xS in the rock-salt phase have been investigated using first-principles calculations. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of MnxCa1-xS is 4.4µB and is independent of the Mn concentration. The unfilled Mn -3d levels reduce the local magnetic moment of Mn from its free space charge value of 5µB to 4.4µB due to 3p–3d hybridization.

Keywords: semiconductors, Ab initio calculations, band-structure, magnetic properties

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294 Two-Dimensional WO₃ and TiO₂ Semiconductor Oxides Developed by Atomic Layer Deposition with Controllable Nano-Thickness on Wafer-Scale

Authors: S. Zhuiykov, Z. Wei

Abstract:

Conformal defect-free two-dimensional (2D) WO₃ and TiO₂ semiconductors have been developed by the atomic layer deposition (ALD) technique on wafer scale with unique approach to the thickness control with precision of ± 10% from the monolayer of nanomaterial (less than 1.0 nm thick) to the nano-layered 2D structures with thickness of ~3.0-7.0 nm. Developed 2D nanostructures exhibited unique, distinguishable properties at nanoscale compare to their thicker counterparts. Specifically, 2D TiO₂-Au bilayer demonstrated improved photocatalytic degradation of palmitic acid under UV and visible light illumination. Improved functional capabilities of 2D semiconductors would be advantageous to various environmental, nano-energy and bio-sensing applications. The ALD-enabled approach is proven to be versatile, scalable and applicable to the broader range of 2D semiconductors.

Keywords: two-dimensional (2D) semiconductors, ALD, WO₃, TiO₂, wafer scale

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293 Thermal Diffusion of Photovoltaic Organic Semiconductors Determined by Scanning Photothermal Deflection Technique

Authors: K.L. Chiu, Johnny K. W. Ho, M. H. Chan, S. H. Cheung, K. H. Chan, S.K. So

Abstract:

Thermal diffusivity is an important quantity in heat conduction. It measures the rate of heat transfer from the hot side to the cold side of a material. In solid-state materials, thermal diffusivity reveals information related to morphologies and solid quality, as thermal diffusivity can be affected by microstructures. However, thermal diffusivity studies on organic semiconductors are very limited. In this study, scanning photothermal deflection (SPD) technique is used to study the thermal diffusivities of different classes of semiconducting polymers. The reliability of the technique was confirmed by crossing-checking our SPD derived experimental values of different reference materials with their known diffusivities from the literature. To show that thermal diffusivity determination is a potential tool for revealing microscopic properties of organic photovoltaic semiconductors, SPD measurements were applied to various organic semiconducting films with different crystallinities. It is observed that organic photovoltaic semiconductors possess low thermal diffusivity, with values in the range of 0.3mm²/s to 1mm²/s. It is also discovered that polymeric photovoltaic semiconductors with greater molecular planarity, stronger stacking and higher crystallinity would possess greater thermal diffusivities. Correlations between thermal, charge transport properties will be discussed.

Keywords: polymer crystallinity, photovoltaic organic semiconductors, photothermal deflection technique, thermal diffusion

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292 Calculation of Effective Masses and Curie Temperature of (Ga, Mn) as Diluted Magnetic Semiconductor from the Eight-band k.p Model

Authors: Khawlh A. Alzubaidi, Khadijah B. Alziyadi, Amor M. Alsayari

Abstract:

The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a major step toward the implementation of spintronic devices for processing, transferring, and storing of information. Among the many types of DMS materials which have been investigated, Mn-doped GaAs has become one of the best candidates for technological application. However, despite major developments over the last few decades, the maximum Curie temperature (~200 K) remains well below room temperature. In this work, we have studied the effect of Mn content and strain on the GaMnAs effective masses of electron, heavy and light holes calculated in the different crystallographic direction. Also, the Curie temperature in the DMS GaMnAs alloy is determined. Compilation of GaMnAs band parameters have been carried out using the 8-band k.p model based on Lowdin perturbation theory where spin orbit, sp-d exchange interaction, and biaxial strain are taken into account. Our results show that effective masses, calculated along the different crystallographic directions, have a strong dependence on strain, ranging from -2% (tensile strain) to 2% (compressive strain), and Mn content increased from 1 to 5%. The Curie temperature is determined within the mean-field approach based on the Zener model.

Keywords: diluted magnetic semiconductors, k.p method, effective masses, curie temperature, strain

Procedia PDF Downloads 59
291 Modeling Reflection and Transmission of Elastodiffussive Wave Sata Semiconductor Interface

Authors: Amit Sharma, J. N. Sharma

Abstract:

This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor halfspace and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.

Keywords: quasilongitudinal, reflection and transmission, semiconductors, acoustics

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290 Room Temperature Electron Spin Resonance and Raman Study of Nanocrystalline Zn(1-x)Cu(x)O (0.005 < x < 0.05) Synthesized by Pyrophoric Method

Authors: Jayashree Das, V. V. Srinivasu , D. K. Mishra, A. Maity

Abstract:

Owing to the important potential applications over decades, transition metal (TM: Mn, Fe, Ni, Cu, Cr, V etc.) doped ZnO-based diluted magnetic semiconductors (DMS) always attract research attention for more and newer investigations. One of the interesting aspects of these materials is to study and understand the magnetic property at room temperature properly, which is very crucial to select a material for any related application. In this regard, Electron spin resonance (ESR) study has been proven to be a powerful technique to investigate the spin dynamics of electrons inside the system, which are responsible for the magnetic behaviour of any system. ESR as well as the Raman and Photoluminescence spectroscopy studies are also helpful to study the defects present or created inside the system in the form of oxygen vacancy or cluster instrumental in determining the room temperature ferromagnetic property of transition metal doped ZnO system, which can be controlled through varying dopant concentration, appropriate synthesis technique and sintering of the samples. For our investigation, we synthesised Cu-doped ZnO nanocrystalline samples with composition Zn1-xCux ( 0.005< x < 0.05) by pyrophoric method and sintered at a low temperature of 650 0C. The microwave absorption is studied by the Electron Spin Resonance (ESR) of X-band (9.46 GHz) at room temperature. Systematic analysis of the obtained ESR spectra reveals that all the compositions of Cu-doped ZnO samples exhibit resonance signals of appreciable line widths and g value ~ 2.2, typical characteristic of ferromagnetism in the sample. Raman scattering and the photoluminescence study performed on the samples clearly indicated the presence of pronounced defect related peaks in the respective spectra. Cu doping in ZnO with varying concentration also observed to affect the optical band gap and the respective absorption edges in the UV-Vis spectra. FTIR spectroscopy reveals the Cu doping effect on the stretching bonds of ZnO. To probe into the structural and morphological changes incurred by Cu doping, we have performed XRD, SEM and EDX study, which confirms adequate Cu substitution without any significant impurity phase formation or lattice disorder. With proper explanation, we attempt to correlate the results observed for the structural optical and magnetic behaviour of the Cu-doped ZnO samples. We also claim that our result can be instrumental for appropriate applications of transition metal doped ZnO based DMS in the field of optoelectronics and Spintronics.

Keywords: diluted magnetic semiconductors, electron spin resonance, raman scattering, spintronics.

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289 Continuous Production of Prebiotic Pectic Oligosaccharides from Sugar Beet Pulp in a Continuous Cross Flow Membrane Bioreactor

Authors: Neha Babbar, S. Van Roy, W. Dejonghe, S. Sforza, K. Elst

Abstract:

Pectic oligosaccharides (a class of prebiotics) are non-digestible carbohydrates which benefits the host by stimulating the growth of healthy gut micro flora. Production of prebiotic pectic oligosaccharides (POS) from pectin rich agricultural residues involves a cutting of long chain polymer of pectin to oligomers of pectin while avoiding the formation of monosaccharides. The objective of the present study is to develop a two-step continuous biocatalytic membrane reactor (MER) for the continuous production of POS (from sugar beet pulp) in which conversion is combined with separation. Optimization of the ratio of POS/monosaccharides, stability and productivities of the process was done by testing various residence times (RT) in the reactor vessel with diluted (10 RT, 20 RT, and 30 RT) and undiluted (30 RT, 40 RT and 60 RT) substrate. The results show that the most stable processes (steady state) were 20 RT and 30 RT for diluted substrate and 40 RT and 60 RT for undiluted substrate. The highest volumetric and specific productivities of 20 g/L/h and 11 g/gE/h; 17 g/l/h and 9 g/gE/h were respectively obtained with 20 RT (diluted substrate) and 40 RT (undiluted substrate). Under these conditions, the permeates of the reactor test with 20 RT (diluted substrate) consisted of 80 % POS fractions while that of 40 RT (undiluted substrate) resulted in 70% POS fractions. A two-step continuous biocatalytic MER for the continuous POS production looks very promising for the continuous production of tailor made POS. Although both the processes i.e 20 RT (diluted substrate) and 40 RT (undiluted substrate) gave the best results, but for an Industrial application it is preferable to use an undiluted substrate.

Keywords: pectic oligosaccharides, membrane reactor, residence time, specific productivity, volumetric productivity

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288 First Principle Calculation of The Magnetic Properties of Mn-doped 6H-SiC

Authors: M. Al Azri, M. Elzain, K. Bouziane, S. M. Chérif

Abstract:

The electronic and magnetic properties of 6H-SiC with Mn impurities have been calculated using ab-initio calculations. Various configurations of Mn sites and Si and C vacancies were considered. The magnetic coupling between the two Mn atoms at substitutional and interstitials sites with and without vacancies is studied as a function of Mn atoms interatomic distance. It was found that the magnetic interaction energy decreases with increasing distance between the magnetic atoms. The energy levels appearing in the band gap due to vacancies and due to Mn impurities are determined. The calculated DOS’s are used to analyze the nature of the exchange interaction between the impurities. The band coupling model based on the p-d and d-d level repulsions between Mn and SiC has been used to describe the magnetism observed in each configuration. Furthermore, the impacts of applying U to Mn-d orbital on the magnetic moment have also been investigated. The results are used to understand the experimental data obtained on Mn- 6H-SiC (as-implanted and as –annealed) for various Mn concentration (CMn = 0.7%, 1.6%, 7%).

Keywords: ab-initio calculations, diluted magnetic semiconductors, magnetic properties, silicon carbide

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287 Effectiveness of Jackfruit Seed Starch as Coagulant Aid in Landfill Leachate Treatment

Authors: Mohd Suffian Yusoff, Noor Aina Mohamad Zuki, Mohd Faiz Muaz Ahmad Zamri

Abstract:

Currently, aluminium sulphate (alum), ferric chloride and polyaluminium chloride (PAC) are the most common coagulants being used for leachate coagulation-flocculation treatment. However, the impact of these residual’s coagulants have sparked huge concern ceaselessly. Therefore, development of natural coagulant as an alternative coagulant for treatment process has been given full attentions. In this attempt jackfruit seed starch (JSS) was produce by extraction method. The removal efficiency was determined using jar test method. The removal of organic matter and ammonia were compared between JSS used in powder form and diluted form in leachate. The yield of starch from the extraction method was 33.17 % with light brown in colour. The removal of turbidity was the highest at pH 8 for both diluted and powdered JSS with 38% and 8.7% of removal. While for colour removal the diluted JSS showed 18.19% of removal compared to powdered JSS. The diluted JSS also showed the highest removal of suspended solid with 3.5% compared to powdered JSS with 2.8%. Instead of coagulant, JSS as coagulant aid has succeed to reduce the dosage of PAC from 900 mg/L to 528 mg/L by maintaining colour and turbidity removal up to 94% and 92 % respectively. The JSS coagulant also has decreased the negative charge of the leachate nearly to the neutral charge (0.209 mv). The result proved that JSS was more effective to be used as coagulant aid landfill leachate treatment.

Keywords: landfill leachate, natural coagulant, jackfruit seed starch, coagulant

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286 Half-Metallic Ferromagnetism in CdCoTe and CdMnTe: Ab-Initio Study

Authors: A.Zitouni, S.Bentata, B.Bouadjemi, T.Lantri, W. Benstaali, Z.Aziz, S.Cherid, A. Sefir

Abstract:

Using the first-principles method, we investigate the structural, electronic, and magnetic properties of the diluted magnetic semiconductors CdCoTe and CdMnTe in the zinc blende phase with 12.5% of Cr. The calculations are performed by a developed full potential augmented plane wave (FP-L/APW) method within the spin density functional theory (DFT). As exchange–correlation potential, we used the new generalized gradient approximation GGA. Structural properties are determined from the total energy calculations and we found that these compounds are stable in the ferromagnetic phase. We discuss the electronic structures, total and partial densities of states and local moments. Finally, CdCoTe and CdMnTe in the zinc-blend phase show the half-metallic ferromagnetic nature and are expected to be potential materials for spintronic devices.

Keywords: DFT, GGA, band structures, half-metallic, spintronics

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285 Structural and Magnetic Properties of Mn-Doped 6H-SiC

Authors: M. Al Azri, M. Elzain, K. Bouziane, S. M. Chérif

Abstract:

n-Type 6H-SiC(0001) substrates were implanted with three fluencies of Mn+ 5x1015 Mn/cm2 (Mn content: 0.7%), 1x1016 (~2 %), and 5x1016 cm–2 (7%) with implantation energy of 80 keV and substrate temperature of 365ºC. The samples were characterized using Rutherford Backscattering and Channeling Spectroscopy (RBS/C), High-Resolution X-Ray Diffraction technique (HRXRD), micro-Raman Spectroscopy (μRS), and Superconducting Quantum Interference Device (SQUID) techniques. The aim of our work is to investigate implantation induced defects with dose and to study any correlation between disorder-composition and magnetic properties. In addition, ab-initio calculations were used to investigate the structural and magnetic properties of Mn-doped 6H-SiC. Various configurations of Mn sites and vacancy types were considered. The calculations showed that a substitutional Mn atom at Si site possesses larger magnetic moment than Mn atom at C site. A model is introduced to explain the dependence of the magnetic structure on site occupation. The magnetic properties of ferromagnetically (FM) and antiferromagnetically (AFM) coupled pairs of Mn atoms with and without neighboring vacancies have also been explored.

Keywords: ab-initio calculations, diluted magnetic semiconductors, magnetic properties, silicon carbide

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284 Application of Molecular Materials in the Manufacture of Flexible and Organic Devices for Photovoltaic Applications

Authors: Mariana Gomez Gomez, Maria Elena Sanchez Vergara

Abstract:

Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductors films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 to 1.55 eV for direct transitions and 1.29 to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/ Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values ​​at lower voltages. The results obtained show that the semiconductors devices doped with allene compounds can be used in the manufacture of optoelectronic devices.

Keywords: electrical properties, optical gap, phthalocyanine, thin film.

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283 Titania Assisted Metal-Organic Framework Matrix for Elevated Hydrogen Generation Combined with the Production of Graphene Sheets through Water-Splitting Process

Authors: Heba M. Gobara, Ahmed A. M. El-Naggar, Rasha S. El-Sayed, Amal A. AlKahlawy

Abstract:

In this study, metal organic framework (Cr-MIL-101) and TiO₂ nanoparticles were utilized as two semiconductors for water splitting process. The coupling of both semiconductors in order to improve the photocatalytic reactivity for the hydrogen production in presence of methanol as a hole scavenger under visible light (sunlight) has been performed. The forementioned semiconductors and the collected samples after water splitting application are characterized by several techniques viz., XRD, N₂ adsorption-desorption, TEM, ED, EDX, Raman spectroscopy and the total content of carbon. The results revealed an efficient yield of H₂ production with maximum purity 99.3% with the in-situ formation of graphene oxide nanosheets and multiwalled carbon nanotubes coated over the surface of the physically mixed Cr-MIL-101–TiO₂ system. The amount of H₂ gas produced was stored when using Cr-MIL-101 catalyst individually. The obtained data in this work provides promising candidate materials for pure hydrogen production as a clean fuel acquired from the water splitting process. In addition, the in-situ production of graphene nanosheets and carbon nanotubes is counted as promising advances for the presented process.

Keywords: hydrogen production, water splitting, photocatalysts, Graphene

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282 Renewable Energy Potential of Diluted Poultry Manure during Ambient Anaerobic Stabilisation

Authors: Cigdem Yangin-Gomec, Aigerim Jaxybayeva, Orhan Ince

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In this study, the anaerobic treatability of chicken manure diluted with tap water (with an influent feed ratio of 1 kg of fresh chicken manure to 6 liter of tap water) was investigated in a lab-scale anaerobic sludge bed (ASB) reactor inoculated with the granular sludge already adapted to chicken manure. The raw waste digested in this study was the manure from laying-hens having average total solids (TS) of about 30% with ca. 60% volatile content. The ASB reactor was fed semi-continuously at ambient operating temperature range (17-23C) at a HRT of 13 and 26 days for about 6 months, respectively. The respective average total and soluble chemical oxygen demand (COD) removals were ca. 90% and 75%, whereas average biomethane production rate was calculated ca. 180 lt per kg of CODremoved from the ASB reactor at an average HRT of 13 days. Moreover, total suspended solids (TSS) and volatile suspended solids (VSS) in the influent were reduced more than 97%. Hence, high removals of the organic compounds with respective biogas production made anaerobic stabilization of the diluted chicken manure by ASB reactor at ambient operating temperatures viable. By this way, external heating up to 35C (i.e. anaerobic processes have been traditionally operated at mesophilic conditions) could be avoided in the scope of this study.

Keywords: ambient anaerobic digestion, biogas recovery, poultry manure, renewable energy

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281 Effect of III-V Nitrides on Performance of Graphene-Gold SPR Biosensor

Authors: Bijaya Kumar Sahoo

Abstract:

The effect of III-V nitride semiconductors on performance of a graphene-on-gold surface plasmon resonance (SPR) biosensor has been investigated theoretically. III-V nitrides (AlN, GaN and InN) have been grown between gold (Au) and graphene layers. The sensitivity and performance of the biosensor have been computed for with and without semiconductors. Due to superior electronic and optical properties, III-V nitrides demonstrate high sensitivity and performance over Si and Ge. The enhancement of evanescent electric field due to III-V nitrides have been computed and found highest for InN. The analysis shows that for a high-sensitive imaging biosensor the required optimal thickness of gold, InN and graphene are respectively 49 nm, 11 nm and 0.34 nm for the light of wavelength =633 nm (red He-Ne laser). This study suggests that InN would be a better choice for fabrication of new imaging SPR biosensors.

Keywords: SPR biosensor, optical properties, III-V nitrides, sensitivity, enhancement of electric field, performance of graphene gold SPR biosensor

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280 A Strategy for Reducing Dynamic Disorder in Small Molecule Organic Semiconductors by Suppressing Large Amplitude Thermal Motions

Authors: Steffen Illig, Alexander S. Eggeman, Alessandro Troisi, Stephen G. Yeates, John E. Anthony, Henning Sirringhaus

Abstract:

Large-amplitude intermolecular vibrations in combination with complex shaped transfer integrals generate a thermally fluctuating energetic landscape. The resulting dynamic disorder and its intrinsic presence in organic semiconductors is one of the most fundamental differences to their inorganic counterparts. Dynamic disorder is believed to govern many of the unique electrical and optical properties of organic systems. However, the low energy nature of these vibrations makes it difficult to access them experimentally and because of this we still lack clear molecular design rules to control and reduce dynamic disorder. Applying a novel technique based on electron diffraction we encountered strong intermolecular, thermal vibrations in every single organic material we studied (14 up to date), indicating that a large degree of dynamic disorder is a universal phenomenon in organic crystals. In this paper a new molecular design strategy will be presented to avoid dynamic disorder. We found that small molecules that have their side chains attached to the long axis of their conjugated core have been found to be less likely to suffer from dynamic disorder effects. In particular, we demonstrate that 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothio-phene (C8-BTBT) and 2,9-di-decyl-dinaphtho-[2,3-b:20,30-f]-thieno-[3,2-b]-thiophene (C10DNTT) exhibit strongly reduced thermal vibrations in comparison to other molecules and relate their outstanding performance to their lower dynamic disorder. We rationalize the low degree of dynamic disorder in C8-BTBT and C10-DNTT with a better encapsulation of the conjugated cores in the crystal structure which helps reduce large amplitude thermal motions. The work presented in this paper provides a general strategy for the design of new classes of very high mobility organic semiconductors with low dynamic disorder.

Keywords: charge transport, C8-BTBT, C10-DNTT, dynamic disorder, organic semiconductors, thermal vibrations

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279 Complete Enumeration Approach for Calculation of Residual Entropy for Diluted Spin Ice

Authors: Yuriy A. Shevchenko, Konstantin V. Nefedev

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We consider the antiferromagnetic systems of Ising spins located at the sites of the hexagonal, triangular and pyrochlore lattices. Such systems can be diluted to a certain concentration level by randomly replacing the magnetic spins with nonmagnetic ones. Quite recently we studied density of states (DOS) was calculated by the Wang-Landau method. Based on the obtained data, we calculated the dependence of the residual entropy (entropy at a temperature tending to zero) on the dilution concentration for quite large systems (more than 2000 spins). In the current study, we obtained the same data for small systems (less than 20 spins) by a complete search of all possible magnetic configurations and compared the result with the result for large systems. The shape of the curve remains unchanged in both cases, but the specific values of the residual entropy are different because of the finite size effect.

Keywords: entropy, pyrochlore, spin ice, Wang-Landau algorithm

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278 Surface Characterization of Zincblende and Wurtzite Semiconductors Using Nonlinear Optics

Authors: Hendradi Hardhienata, Tony Sumaryada, Sri Setyaningsih

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Current progress in the field of nonlinear optics has enabled precise surface characterization in semiconductor materials. Nonlinear optical techniques are favorable due to their nondestructive measurement and ability to work in nonvacuum and ambient conditions. The advance of the bond hyperpolarizability models opens a wide range of nanoscale surface investigation including the possibility to detect molecular orientation at the surface of silicon and zincblende semiconductors, investigation of electric field induced second harmonic fields at the semiconductor interface, detection of surface impurities, and very recently, study surface defects such as twin boundary in wurtzite semiconductors. In this work, we show using nonlinear optical techniques, e.g. nonlinear bond models how arbitrary polarization of the incoming electric field in Rotational Anisotropy Spectroscopy experiments can provide more information regarding the origin of the nonlinear sources in zincblende and wurtzite semiconductor structure. In addition, using hyperpolarizability consideration, we describe how the nonlinear susceptibility tensor describing SHG can be well modelled using only few parameter because of the symmetry of the bonds. We also show how the third harmonic intensity feature shows considerable changes when the incoming field polarization angle is changed from s-polarized to p-polarized. We also propose a method how to investigate surface reconstruction and defects in wurtzite and zincblende structure at the nanoscale level.

Keywords: surface characterization, bond model, rotational anisotropy spectroscopy, effective hyperpolarizability

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277 Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique

Authors: S. Zhuiykov, Zh. Hai, H. Xu, C. Xue

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Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.

Keywords: Atomic Layer Deposition (ALD), tungsten oxide, WO₃, two-dimensional semiconductors, single fundamental layer

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276 Recovery of Draw Solution in Forward Osmosis by Direct Contact Membrane Distillation

Authors: Su-Thing Ho, Shiao-Shing Chen, Hung-Te Hsu, Saikat Sinha Ray

Abstract:

Forward osmosis (FO) is an emerging technology for direct and indirect potable water reuse application. However, successful implementation of FO is still hindered by the lack of draw solution recovery with high efficiency. Membrane distillation (MD) is a thermal separation process by using hydrophobic microporous membrane that is kept in sandwich mode between warm feed stream and cold permeate stream. Typically, temperature difference is the driving force of MD which attributed by the partial vapor pressure difference across the membrane. In this study, the direct contact membrane distillation (DCMD) system was used to recover diluted draw solution of FO. Na3PO4 at pH 9 and EDTA-2Na at pH 8 were used as the feed solution for MD since it produces high water flux and minimized salt leakage in FO process. At high pH, trivalent and tetravalent ions are much easier to remain at draw solution side in FO process. The result demonstrated that PTFE with pore size of 1 μm could achieve the highest water flux (12.02 L/m2h), followed by PTFE 0.45 μm (10.05 L/m2h), PTFE 0.1 μm (7.38 L/m2h) and then PP (7.17 L/m2h) while using 0.1 M Na3PO4 draw solute. The concentration of phosphate and conductivity in the PTFE (0.45 μm) permeate were low as 1.05 mg/L and 2.89 μm/cm respectively. Although PTFE with the pore size of 1 μm could obtain the highest water flux, but the concentration of phosphate in permeate was higher than other kinds of MD membranes. This study indicated that four kinds of MD membranes performed well and PTFE with the pore size of 0.45 μm was the best among tested membranes to achieve high water flux and high rejection of phosphate (99.99%) in recovery of diluted draw solution. Besides that, the results demonstrate that it can obtain high water flux and high rejection of phosphate when operated with cross flow velocity of 0.103 m/s with Tfeed of 60 ℃ and Tdistillate of 20 ℃. In addition to that, the result shows that Na3PO4 is more suitable for recovery than EDTA-2Na. Besides that, while recovering the diluted Na3PO4, it can obtain the high purity of permeate water. The overall performance indicates that, the utilization of DCMD is a promising technology to recover the diluted draw solution for FO process.

Keywords: membrane distillation, forward osmosis, draw solution, recovery

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275 Acrosomal Integrity, DNA Integrity and Post-Thawing Motility of Goat Semen after Methionine Supplementation

Authors: K. A. El-Battawy, W. S. El-Nattat

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The aim of the present investigation was to evaluate the impact of methionine on the preservation, acrosomal integrity, DNA integrity and post thawing motility of extended goat semen. Semen samples were diluted with a Tris-based extender containing the additive methionine 1.5, 2.5 and 5mM then the diluted samples were kept in glass tubes and cooled from 37°C to 5°C in a cold cabinet, and maintained at 5°C. Sperm motility (SM%), alive sperm (AS%), sperm abnormalities (SA%) acrosomal integrity and DNA integrity were determined at 5°C for periods of 0,24, 48and 72 h of liquid storage. Furthermore, the influence of methionine on post-thawing motility was assessed. The results elaborated that the addition of methionine and L-tyrosine particularly 2.5mM of methionine significantly improved SM% and reduced dead sperm %. Furthermore, the addition of 2.5mM methionine improved post-thawing motility (43.75 ± 1.25% vs. 32.50 ± 3.23 in the control group). Moreover, the frequency of acrosomal defects was lower in treated groups than in control. In conclusion, the addition of methionine induced remarkable physiological effects on goat semen quality during conservation for 7-days-long period at 5°C and improved its freezability.

Keywords: methionine, acrosome, semen, cryopreservation

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274 Optimization of Diluted Organic Acid Pretreatment on Rice Straw Using Response Surface Methodology

Authors: Rotchanaphan Hengaroonprasan, Malinee Sriariyanun, Prapakorn Tantayotai, Supacharee Roddecha, Kraipat Cheenkachorn

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Lignocellolusic material is a substance that is resistant to be degraded by microorganisms or hydrolysis enzymes. To be used as materials for biofuel production, it needs pretreatment process to improve efficiency of hydrolysis. In this work, chemical pretreatments on rice straw using three diluted organic acids, including acetic acid, citric acid, oxalic acid, were optimized. Using Response Surface Methodology (RSM), the effect of three pretreatment parameters, acid concentration, treatment time, and reaction temperature, on pretreatment efficiency were statistically evaluated. The results indicated that dilute oxalic acid pretreatment led to the highest enhancement of enzymatic saccharification by commercial cellulase and yielded sugar up to 10.67 mg/ml when using 5.04% oxalic acid at 137.11 oC for 30.01 min. Compared to other acid pretreatment by acetic acid, citric acid, and hydrochloric acid, the maximum sugar yields are 7.07, 6.30, and 8.53 mg/ml, respectively. Here, it was demonstrated that organic acids can be used for pretreatment of lignocellulosic materials to enhance of hydrolysis process, which could be integrated to other applications for various biorefinery processes.

Keywords: lignocellolusic biomass, pretreatment, organic acid response surface methodology, biorefinery

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273 Enhanced Properties of Plasma-Induced Two-Dimensional Ga₂O₃/GaS Heterostructures on Liquid Alloy Substrate

Authors: S. Zhuiykov, M. Karbalaei Akbari

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Ultra-low-level incorporation of trace impurities and dopants into two-dimensional (2D) semiconductors is a challenging step towards the development of functional electronic instruments based on 2D materials. Herein, the incorporation of sulphur atoms into 2D Ga2O3 surface oxide film of eutectic gallium-indium alloy (EGaIn) is achieved through plasma-enhanced metal-catalyst dissociation of H2S gas on EGaIn substrate. This process led to the growth of GaS crystalline nanodomains inside amorphous 2D Ga2O3 sublayer films. Consequently, 2D lateral heterophase was developed between the amorphous Ga2O3 and crystalline GaS nanodomains. The materials characterization revealed the alteration of photoluminescence (PL) characteristics and change of valence band maximum (VBM) of functionalized 2D films. The comprehensive studies by conductive atomic force microscopy (c-AFM) showed considerable enhancement of conductivity of 2D Ga2O3/GaS materials (300 times improvement) compared with that of 2D Ga2O3 film. This technique has a great potential for the fabrication of 2D metal oxide devices with tuneable electronic characteristics similar to nano junction memristors and transistors.

Keywords: 2D semiconductors, Ga₂O₃, GaS, plasma-induced functionalization

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272 Functional Nanomaterials for Environmental Applications

Authors: S. A. M. Sabrina, Gouget Lammel, Anne Chantal, Chazalviel, Jean Noël, Ozanam François, Etcheberry Arnaud, Tighlit Fatma Zohra, B. Samia, Gabouze Noureddine

Abstract:

The elaboration and characterization of hybrid nano materials give rise to considerable interest due to the new properties that arising. They are considered as an important category of new materials having innovative characteristics by combining the specific intrinsic properties of inorganic compounds (semiconductors) with the grafted organic species. This open the way to improved properties and spectacular applications in various and important fields, especially in the environment. In this work, nano materials based-semiconductors were elaborated by chemical route. The obtained surfaces were grafted with organic functional groups. The functionalization process was optimized in order to confer to the hybrid nano material a good stability as well as the right properties required for the subsequent applications. Different characterization techniques were used to investigate the resulting nano structures, such as SEM, UV-Visible, FTIR, Contact angle and electro chemical measurements. Finally, applications were envisaged in environmental area. The elaborated nano structures were tested for the detection and the elimination of pollutants.

Keywords: hybrid materials, porous silicon, peptide, metal detection

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271 Synthesis and Characterization of Graphene Composites with Application for Sustainable Energy

Authors: Daniel F. Sava, Anton Ficai, Bogdan S. Vasile, Georgeta Voicu, Ecaterina Andronescu

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The energy crisis and environmental contamination are very serious problems, therefore searching for better and sustainable renewable energy is a must. It is predicted that the global energy demand will double until 2050. Solar water splitting and photocatalysis are considered as one of the solutions to these issues. The use of oxide semiconductors for solar water splitting and photocatalysis started in 1972 with the experiments of Fujishima and Honda on TiO2 electrodes. Since then, the evolution of nanoscience and characterization methods leads to a better control of size, shape and properties of materials. Although the past decade advancements are astonishing, for these applications the properties have to be controlled at a much finer level, allowing the control of charge-carrier lives, energy level positions, charge trapping centers, etc. Graphene has attracted a lot of attention, since its discovery in 2004, due to the excellent electrical, optical, mechanical and thermal properties that it possesses. These properties make it an ideal support for photocatalysts, thus graphene composites with oxide semiconductors are of great interest. We present in this work the synthesis and characterization of graphene-related materials and oxide semiconductors and their different composites. These materials can be used in constructing devices for different applications (batteries, water splitting devices, solar cells, etc), thus showing their application flexibility. The synthesized materials are different morphologies and sizes of TiO2, ZnO and Fe2O3 that are obtained through hydrothermal, sol-gel methods and graphene oxide which is synthesized through a modified Hummer method and reduced with different agents. Graphene oxide and the reduced form could also be used as a single material for transparent conductive films. The obtained single materials and composites were characterized through several methods: XRD, SEM, TEM, IR spectroscopy, RAMAN, XPS and BET adsorption/desorption isotherms. From the results, we see the variation of the properties with the variation of synthesis parameters, size and morphology of the particles.

Keywords: composites, graphene, hydrothermal, renewable energy

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270 Understanding the Fundamental Driver of Semiconductor Radiation Tolerance with Experiment and Theory

Authors: Julie V. Logan, Preston T. Webster, Kevin B. Woller, Christian P. Morath, Michael P. Short

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Semiconductors, as the base of critical electronic systems, are exposed to damaging radiation while operating in space, nuclear reactors, and particle accelerator environments. What innate property allows some semiconductors to sustain little damage while others accumulate defects rapidly with dose is, at present, poorly understood. This limits the extent to which radiation tolerance can be implemented as a design criterion. To address this problem of determining the driver of semiconductor radiation tolerance, the first step is to generate a dataset of the relative radiation tolerance of a large range of semiconductors (exposed to the same radiation damage and characterized in the same way). To accomplish this, Rutherford backscatter channeling experiments are used to compare the displaced lattice atom buildup in InAs, InP, GaP, GaN, ZnO, MgO, and Si as a function of step-wise alpha particle dose. With this experimental information on radiation-induced incorporation of interstitial defects in hand, hybrid density functional theory electron densities (and their derived quantities) are calculated, and their gradient and Laplacian are evaluated to obtain key fundamental information about the interactions in each material. It is shown that simple, undifferentiated values (which are typically used to describe bond strength) are insufficient to predict radiation tolerance. Instead, the curvature of the electron density at bond critical points provides a measure of radiation tolerance consistent with the experimental results obtained. This curvature and associated forces surrounding bond critical points disfavors localization of displaced lattice atoms at these points, favoring their diffusion toward perfect lattice positions. With this criterion to predict radiation tolerance, simple density functional theory simulations can be conducted on potential new materials to gain insight into how they may operate in demanding high radiation environments.

Keywords: density functional theory, GaN, GaP, InAs, InP, MgO, radiation tolerance, rutherford backscatter channeling

Procedia PDF Downloads 142