Search results for: ion sensitive field effect transistor (ISFET)

Authors: Ezzat Abd El Lateef

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Agroforestry means combining the management of trees with productive agricultural activities, especially in semiarid regions where crop yield increases are limited in agroforestry systems due to the fertility and microclimate improvements and the large competitive effect of trees with crops for water and nutrients, in order to assess the effect of agroforestry of some field crops with citrus trees as an approach to establish biodiversity in fruit tree plantations. Three field crops, i.e., maize, soybean and sunflower, were inter-planted with seedless orange trees (4*4 m) or were planted as solid plantings. The results for the trees indicated a larger fruit yield was obtained when soybean and sunflowers were interplant with citrus. Statistically significant effects (P<0.05) were found for maize grain and biological yields, with increased yields when grown as solid planting. There were no differences in the yields of soya bean and sunflower, where the yields were very similar between the two cropping systems. It is evident from the trials that agroforestry is an efficient concept to increase biodiversity through the interaction of trees with the interplant field crop species. Maize, unlike the other crops, was more sensitive to shade conditions under agroforestry practice and not preferred in the biodiversity system. The potential of agroforestry to improve or increase biodiversity is efficient as the understorey crops are usually C4 species, and the overstorey trees are invariably C3 species in agroforestry. Improvement in interplant species is most likely if the understorey crop is a C3 species, which are usually light saturated in the open, and partial shade may have little effect on assimilation or by a concurrent reduction in transpiration. It could be concluded that agroforestry is an efficient concept to increase biodiversity through the interaction of trees with the interplant field crop species. Some field crops could be employed successfully, like soybean or sunflowers, while others like maize are sensitive to incorporate in agroforestry system.

Keywords: agroforestry, field crops, C3 and C4 plants, yield

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Authors: Zina Saheb, Ezz El-Masry

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As CMOS technology scaling down, Silicon oxide thickness (SiO2) become very thin (few Nano meters). When SiO2 is less than 3nm, gate direct tunneling (DT) leakage current becomes a dormant problem that impacts the transistor performance. Floating gate MOSFET (FGMOSFET) has been used in many low-voltage and low-power applications. Most of the available simulation models of FGMOSFET for analog circuit design does not account for gate DT current and there is no accurate analysis for the gate DT. It is a crucial to use an accurate mode in order to get a realistic simulation result that account for that DT impact on FGMOSFET performance effectively.

Keywords: CMOS transistor, direct-tunneling current, floating-gate, gate-leakage current, simulation model

Procedia PDF Downloads 507

Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

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A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: high voltage, IGBT, solid state switch, bipolar transistor

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Authors: Biswarup Mukherjee, Aniruddha Ghoshal

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In this paper, we propose a new technique for implementing a low power high speed full adder using 8 transistors. Full adder circuits are used comprehensively in Application Specific Integrated Circuits (ASICs). Thus it is desirable to have high speed operation for the sub components. The explored method of implementation achieves a high speed low power design for the full adder. Simulated results indicate the superior performance of the proposed technique over conventional 28 transistor CMOS full adder. Detailed comparison of simulated results for the conventional and present method of implementation is presented.

Keywords: high speed low power full adder, 2-T MUX, 3-T XOR, 8-T FA, pass transistor logic, CMOS (complementary metal oxide semiconductor)

Procedia PDF Downloads 327

Authors: Prisa Damrongsiri, Kittinan Pongpianskul, Mario Kubek, Herwig Unger

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Apps are today the most important possibility to adapt mobile phones and computers to fulfill the special needs of their users. Location- and context-sensitive programs are hereby the key to support the interaction of the user with his/her environment and also to avoid an overload with a plenty of dispensable information. The contribution shows, how a trusted, secure and really bi-directional communication and interaction among users and their environment can be established and used, e.g. in the field of home automation.

Keywords: apps, context-sensitive, location-sensitive, self-configuration, mobile computing, smart home

Procedia PDF Downloads 372

Authors: Hassane Ouazzani Chahdi, Omar Helli, Bourzgui Nour Eddine, Hassan Maher, Ali Soltani

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The real-time knowledge of the NO, NO₂ concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the concentration of each of these species will also enable engines to run leaner (i.e., more fuel efficient) while still meeting the anti-pollution requirements. Our proposed technology is promising in the field of automotive sensors. It consists of nanostructured semiconductors based on gallium nitride and zirconia dioxide. The development of new technologies for selective detection of NO and NO₂ gas species would be a critical enabler of superior depollution. The current response was well correlated to the NO concentration in the range of 0–2000 ppm, 0-2500 ppm NO₂, and 0-300 ppm NH₃ at a temperature of 600.

Keywords: NOₓ sensors, HEMT transistor, anti-pollution, gallium nitride, gas sensor

Procedia PDF Downloads 219

Authors: Olfat A. Fadali, Mohamed S. Mahmoud, Omnia H. Abdelraheem, Shimaa G. Mohammed

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The effect of electromagnetic field (EMF) on the removal of edible oil from oil-in-water emulsion by means of electrocoagulation was investigated in rectangular batch electrochemical cell with DC current. Iron (Fe) plate anodes and stainless steel cathodes were employed as electrodes. The effect of different magnetic field intensities (1.9, 3.9 and 5.2 tesla), three different positions of EMF (below, perpendicular and parallel to the electrocoagulation cell), as well as operating time; had been investigated. The application of electromagnetic field (5.2 tesla) raises percentage of oil removal from 72.4% for traditional electrocoagulation to 90.8% after 20 min.

Keywords: electrocoagulation, electromagnetic field, Oil-water emulsion, edible oil

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Authors: Birinderjit Singh Kalyan, Inderpreet Kaur, Balwinder Singh Sohi

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In this paper, an equivalent model for floating gate transistor has been proposed. Using the floating gate voltage value, capacitive coupling coefficients has been found at different bias conditions. The amount of charge present on the gate has been then calculated using the transient models of hot electron programming and Fowler-Nordheim Tunnelling. The proposed model can be extended to the transient conditions as well. The SPICE equivalent model is designed and current-voltage characteristics and Transfer characteristics are comparatively analysed. The dc current-voltage characteristics, as well as dc transfer characteristics, have been plotted for an FGMOS with W/L=0.25μm/0.375μm, the inter-poly capacitance of 0.8fF for both programmed and erased states. The Comparative analysis has been made between the present model and capacitive coefficient coupling methods which were already available.

Keywords: FGMOS, floating gate transistor, capacitive coupling coefficient, SPICE model

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Authors: Lekshmi Vijayan, K. Shreekrishna Kumar

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We demonstrated an organic field effect transistor based photodetector using phthalocyanine as the active material that exhibited high photosensitivity under varying light wavelengths. The thermally grown SiO₂ layer on silicon wafer act as a substrate. The critical parameters, such as photosensitivity, responsivity and detectivity, are comparatively high and were 3.09, 0.98AW⁻¹ and 4.86 × 10¹⁰ Jones, respectively, under a bias of 5 V and a monochromatic illumination intensity of 4mW cm⁻². The photodetector has a linear I-V curve with a low dark current. On comparing photoresponse of copper phthalocyanine at four different wavelengths, 560 nm shows better photoresponse and the highest value of photosensitivity is also obtained.

Keywords: photodetector, responsivity, photosensitivity, detectivity

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Authors: Tomas Vincze, Michal Micjan, Milan Pavuk, Martin Weis

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In recent years, alternative materials are gaining attention to replace polycrystalline and amorphous silicon, which are a standard for low requirement devices, where silicon is unnecessarily and high cost. For that reason, metal oxides are envisioned as the new materials for these low-requirement applications such as sensors, solar cells, energy storage devices, or field-effect transistors. Their most common way of layer growth is sputtering; however, this is a high-cost fabrication method, and a more industry-suitable alternative is the sol-gel method. In this group of materials, many oxides exhibit a semiconductor-like behavior with sufficiently high mobility to be applied as transistors. The sol-gel method is a cost-effective deposition technique for semiconductor-based devices. Copper oxides, as p-type semiconductors with free charge mobility up to 1 cm2/Vs., are suitable replacements for poly-Si or a-Si:H devices. However, to reach the potential of silicon devices, a fine-tuning of material properties is needed. Here we focus on the optimization of the electrical parameters of copper oxide-based field-effect transistors by modification of precursor solvent (usually 2-methoxy ethanol). However, to achieve solubility and high-quality films, a better solvent is required. Since almost no solvents have both high dielectric constant and high boiling point, an alternative approach was proposed with blend solvents. By mixing isopropyl alcohol (IPA) and 2-methoxy ethanol (2ME) the precursor reached better solubility. The quality of the layers fabricated using mixed solutions was evaluated in accordance with the surface morphology and electrical properties. The IPA:2ME solution mixture reached optimum results for the weight ratio of 1:3. The cupric oxide layers for optimal mixture had the highest crystallinity and highest effective charge mobility.

Keywords: copper oxide, field-effect transistor, semiconductor, sol-gel method

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Authors: Takoua Soltani, Imen Soltani, Taoufik Aguili

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The communications' and radar systems' demands give rise to new developments in the domain of active integrated antennas (AIA) and arrays. The main advantages of AIA arrays are the simplicity of fabrication, low cost of manufacturing, and the combination between free space power and the scanner without a phase shifter. The integrated active antenna modeling is the coupling between the electromagnetic model and the transport model that will be affected in the high frequencies. Global modeling of active circuits is important for simulating EM coupling, interaction between active devices and the EM waves, and the effects of EM radiation on active and passive components. The current review focuses on the modeling of the active element which is a MESFET transistor immersed in a rectangular waveguide. The proposed EM analysis is based on the Method of Moments combined with the Generalised Equivalent Circuit method (MOM-GEC). The Method of Moments which is the most common and powerful software as numerical techniques have been used in resolving the electromagnetic problems. In the class of numerical techniques, MOM is the dominant technique in solving of Maxwell and Transport’s integral equations for an active integrated antenna. In this situation, the equivalent circuit is introduced to the development of an integral method formulation based on the transposition of field problems in a Generalised equivalent circuit that is simpler to treat. The method of Generalised Equivalent Circuit (MGEC) was suggested in order to represent integral equations circuits that describe the unknown electromagnetic boundary conditions. The equivalent circuit presents a true electric image of the studied structures for describing the discontinuity and its environment. The aim of our developed method is to investigate the antenna parameters such as the input impedance and the current density distribution and the electric field distribution. In this work, we propose a global EM modeling of the MESFET AsGa transistor using an integral method. We will begin by describing the modeling structure that allows defining an equivalent EM scheme translating the electromagnetic equations considered. Secondly, the projection of these equations on common-type test functions leads to a linear matrix equation where the unknown variable represents the amplitudes of the current density. Solving this equation resulted in providing the input impedance, the distribution of the current density and the electric field distribution. From electromagnetic calculations, we were able to present the convergence of input impedance for different test function number as a function of the guide mode numbers. This paper presents a pilot study to find the answer to map out the variation of the existing current evaluated by the MOM-GEC. The essential improvement of our method is reducing computing time and memory requirements in order to provide a sufficient global model of the MESFET transistor.

Keywords: active integrated antenna, current density, input impedance, MESFET transistor, MOM-GEC method

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Authors: Bijaya Kumar Sahoo

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The effect of III-V nitride semiconductors on performance of a graphene-on-gold surface plasmon resonance (SPR) biosensor has been investigated theoretically. III-V nitrides (AlN, GaN and InN) have been grown between gold (Au) and graphene layers. The sensitivity and performance of the biosensor have been computed for with and without semiconductors. Due to superior electronic and optical properties, III-V nitrides demonstrate high sensitivity and performance over Si and Ge. The enhancement of evanescent electric field due to III-V nitrides have been computed and found highest for InN. The analysis shows that for a high-sensitive imaging biosensor the required optimal thickness of gold, InN and graphene are respectively 49 nm, 11 nm and 0.34 nm for the light of wavelength =633 nm (red He-Ne laser). This study suggests that InN would be a better choice for fabrication of new imaging SPR biosensors.

Keywords: SPR biosensor, optical properties, III-V nitrides, sensitivity, enhancement of electric field, performance of graphene gold SPR biosensor

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Authors: Rajesh Agarwal

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Carrier mobility at the organic/insulator interface is essential to the performance of organic thin film transistors (OTFT). The present work describes estimation of field dependent mobility (FDM) parameters and the threshold voltage of an OTFT using a simple, easy to fabricate two terminal asymmetric capacitive test structure using admittance measurements. Conventionally, transfer characteristics are used to estimate the threshold voltage in an OTFT with field independent mobility (FIDM). Yet, this technique breaks down to give accurate results for devices with high contact resistance and having field dependent mobility. In this work, a new technique is presented for characterization of long channel organic capacitor (LCOC). The proposed technique helps in the accurate estimation of mobility enhancement factor (γ), the threshold voltage (V_th) and band mobility (µ₀) using capacitance-voltage (C-V) measurement in OTFT. This technique also helps to get rid of making short channel OTFT or metal-insulator-metal (MIM) structures for making C-V measurements. To understand the behavior of devices and ease of analysis, transmission line compact model is developed. The 2-D numerical simulation was carried out to illustrate the correctness of the model. Results show that proposed technique estimates device parameters accurately even in the presence of contact resistance and field dependent mobility. Pentacene/Poly (4-vinyl phenol) based top contact bottom-gate OTFT’s are fabricated to illustrate the operation and advantages of the proposed technique. Small signal of frequency varying from 1 kHz to 5 kHz and gate potential ranging from +40 V to -40 V have been applied to the devices for measurement.

Keywords: capacitance, mobility, organic, thin film transistor

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Authors: Chaoyan Huang, Hongxia Zheng

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For deep space exploration and long duration interplanetary manned missions, protection of astronauts from cosmic radiation is an unavoidable problem. However, passive shielding can be little effective for protecting particles which energies are greater than 1GeV/nucleon. In this study, active magnetic protection method is adopted. Taking into account the structure and size of the end-cap, eight shielding magnetic field configurations are designed based on the Hoffman configuration. The shielding effect of shielding magnetic field structure, intensity B and thickness L on H particles with 2GeV energy is compared by test particle simulation. The result shows that the shielding effect is better with the linear type magnetic field structure in the end-cap region. Furthermore, two magnetic field configurations with better shielding effect are investigated through H and He galactic cosmic spectra. And the shielding effect of the linear type configuration adopted in the barrel and end-cap regions is best.

Keywords: galactic cosmic rays, active protection, shielding magnetic field configuration, shielding effect

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Authors: Pooja S. Billade, Sanjay S. Chopade

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This paper focuses on the design of three phase induction motor control using single phase input and GSM.The controller used in this work is a wireless speed control using a GSM technique that proves to be very efficient and reliable in applications.The most common principle is the constant V/Hz principle which requires that the magnitude and frequency of the voltage applied to the stator of a motor maintain a constant ratio. By doing this, the magnitude of the magnetic field in the stator is kept at an approximately constant level throughout the operating range. Thus, maximum constant torque producing capability is maintained. The energy that a switching power converter delivers to a motor is controlled by Pulse Width Modulated signals applied to the gates of the power transistors in H-bridge configuration. PWM signals are pulse trains with fixed frequency and magnitude and variable pulse width. When a PWM signal is applied to the gate of a power transistor, it causes the turn on and turns off intervals of the transistor to change from one PWM period.

Keywords: index terms— PIC, GSM (global system for mobile), LCD (Liquid Crystal Display), IM (Induction Motor)

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Authors: A.N. Moulay Khatir, A. Guen-Bouazza, B. Bouazza

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SOI-Multifin-FET shows excellent transistor characteristics, ideal sub-threshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency. In this work, we analyzed this combination by a three-dimensional numerical device simulator to investigate the influence of fins number on corner effect by analyzing its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current for SOI-single-fin FET, three-fin and five-fin, and we provide a comparison with a Trigate SOI Multi-FinFET structure.

Keywords: SOI, FinFET, corner effect, dual-gate, tri-gate, Multi-Fin FET

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Authors: Jessica Gladden

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This study explored the perceived benefits of trauma-sensitive yoga programs. Participants attended one of two six-week trauma-sensitive yoga programs utilizing the G.R.A.C.E model, a format developed based on Emerson’s trauma-sensitive yoga guidelines and modified by the instructors. Participants in this study completed surveys on their experiences. The results of the surveys indicated that participants perceived improvements in self-care, embodiment, and mood. These results show that trauma-sensitive yoga may have benefits beyond the treatment of specific diagnoses that could be applied to a variety of populations. Reflections from one of the researchers who teaches in this program, as well as qualitative statements from the participants, will be shared to support the continued use of this method.

Keywords: yoga, trauma-sensitive, yoga therapy, trauma

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Authors: Dara Singh, Keikhosrow Firouzbakhsh, Mohammad Taghi Ahmadian

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In this study, a validated 3D finite volume model of human eye is developed to study the fluid flow and heat transfer in the human eye at steady state conditions. For this purpose, discretized bio-heat transfer equation coupled with Boussinesq equation is analyzed with different anatomical, environmental, and physiological conditions. It is demonstrated that the fluid circulation is formed as a result of thermal gradients in various regions of eye. It is also shown that posterior region of the human eye is less affected by the ambient conditions compared to the anterior segment which is sensitive to the ambient conditions and also to the way the gravitational field is defined compared to the geometry of the eye making the circulations and the thermal field complicated in transient states. The effect of variation in material and boundary conditions guides us to the conclusion that thermal field of a healthy and non-healthy eye can be distinguished via computer simulations.

Keywords: bio-heat, boussinesq, conduction, convection, eye

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Authors: Mehdi Shekarzadeh, Pejman Taghipour Birgani

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In this paper, the effect of mass and height of tip on the flexural vibration modes of an atomic force microscope (AFM) rectangular cantilever is analyzed. A closed-form expression for the sensitivity of vibration modes is derived using the relationship between the resonant frequency and contact stiffness of cantilever and sample. Each mode has a different sensitivity to variations in surface stiffness. This sensitivity directly controls the image resolution. It is obtained an AFM cantilever is more sensitive when the mass of tip is lower and the first mode is the most sensitive mode. Also, the effect of changes of tip height on the flexural sensitivity is negligible.

Keywords: atomic force microscope, AFM, vibration analysis, flexural vibration, cantilever

Procedia PDF Downloads 364

Authors: Abdelmadjid Mammeri, Fatima Zohra Mahi, Luca Varani, H. Marinchoi

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We propose an analytical model for the admittance and the noise calculations of the InGaAs transistor and diode. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent of the small-signal admittance response is determined by the total currents and the potentials matrix relation between the gate and the drain terminals. The noise is evaluated by using the real part of the transistor/diode admittance under a small-signal perturbation. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; can give significant information about the noise frequency dependence in the InGaAs transistor and diode.

Keywords: InGaAs transistors, InGaAs diode, admittance, resonant peaks, plasma waves, analytical model

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Authors: A. Boursali, A. Guen-Bouazza

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We present a simulation of a HEMT (high electron mobility transistor) structure with and without a field plate. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 15 nm, InAlN/GaN heterostructure and field plate structure, making it superior to modern HEMTs when compared with otherwise equivalent devices. This improves the ability to bear the burden of the current density passes in the channel. We have demonstrated an excellent current density, as high as 2.05 A/m, a peak extrinsic transconductance of 0.59S/m at VDS=2 V, and cutting frequency cutoffs of 638 GHz in the first HEMT and 463 GHz for Field plate HEMT., maximum frequency of 1.7 THz, maximum efficiency of 73%, maximum breakdown voltage of 400 V, leakage current density IFuite=1 x 10-26 A, DIBL=33.52 mV/V and an ON/OFF current density ratio higher than 1 x 1010. These values were determined through the simulation by deriving genetic and Monte Carlo algorithms that optimize the design and the future of this technology.

Keywords: HEMT, silvaco, field plate, genetic algorithm, quantum

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Authors: Z. Kourdi, B. Bouazza, M. Khaouani, A. Guen-Bouazza, Z. Djennati, A. Boursali

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We present a simulation of a HEMT (high electron mobility transistor) structure with and without a field plate. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 15 nm, InAlN/GaN heterostructure and field plate structure, making it superior to modern HEMTs when compared with otherwise equivalent devices. This improves the ability to bear the burden of the current density passes in the channel. We have demonstrated an excellent current density, as high as 2.05 A/mm, a peak extrinsic transconductance of 590 mS/mm at VDS=2 V, and cutting frequency cutoffs of 638 GHz in the first HEMT and 463 GHz for Field plate HEMT., maximum frequency of 1.7 THz, maximum efficiency of 73%, maximum breakdown voltage of 400 V, DIBL=33.52 mV/V and an ON/OFF current density ratio higher than 1 x 1010. These values were determined through the simulation by deriving genetic and Monte Carlo algorithms that optimize the design and the future of this technology.

Keywords: HEMT, Silvaco, field plate, genetic algorithm, quantum

Procedia PDF Downloads 444

Authors: Porag Jyoti Ligira, Gargi Khanna

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The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: spacer, BPJLT, high-k, double gate

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Authors: N. Massoum, B. Bouazza

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In this paper, we have developed a numerical simulation model to describe the electrical properties of GaInP MESFET with submicron gate (Lg = 0.5 µm). This model takes into account the three-dimensional (3D) distribution of the load in the short channel and the law effect of mobility as a function of electric field. Simulation software based on a stochastic method such as Monte Carlo has been established. The results are discussed and compared with those of the experiment. The result suggests experimentally that, in a very small gate length in our devices (smaller than 40 nm), short-channel tunneling explains the degradation of transistor performance, which was previously enhanced by velocity overshoot.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device, simulation software

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Authors: N.Benachour, S. Chouchane, J. P. Chopart

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The zinc-nickel deposition on stainless steel substrate was obtained in a chloride bath composed of ZnCl2 (1.8M), NiCl2.6H2O (1.1M), boric acid H3BO3 (1M) and NH4Cl (4M). One configuration was studied the amplitude or field B (0.5 et1T) is parallel to the surface of the working electrodes .the other share the study of various layer was carried out by XRD. The study of the effect of ammonium chloride in combination with the magnetohydrodynamic effect gave several deposits supposedly good physical properties.

Keywords: ammonium chloride, magnetic field, nickel-zinc alloys, co-deposition

Procedia PDF Downloads 245

Authors: Mohammad Talha, Abdullah Sallehhuddin Abdullah Salim, Abdul Aziz Abdul Jalil, Norzarina Md Yatim

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The significant contribution of institutional investors across the globe in socially responsible investment (SRI) is well-documented in the literature. Nevertheless, how the SRI behavior of pressure-resistant, pressure-sensitive and pressure-indeterminate institutional investors remain unexplored extensively. This study examines the moderating effect of institutional investors towards socially responsible investment behavior in the context of emerging economies. This study involved 229 institutional investors in Malaysia. A total of 1,145 questionnaires were distributed. Out of these, 308 (130 pressure sensitive institutional investors and 178 pressure resistant institutional investors), representing a usable rate of 26.9 per cent, were found fit for data analysis. Utilizing multi-group analysis via AMOS, this study found evidence for the presence of moderating effect by a type of institutional investor topology in socially responsible investment behavior. At intentional level, it established that type of institutional investor was a significant moderator in the relationship between subjective norms, and caring ethical climate with intention among pressure-resistant institutional investors, as well as between perceived behavioral controls with intention among pressure-sensitive institutional investors. At the behavioral level, the results evidenced that there was only a significant moderating effect between intention and socially responsible investment behavior among pressure-resistant institutional investors. The outcomes are expected to benefit policy makers, regulators, and market participants in order to leap forward SRI growth in developing economies. Nevertheless, the outcomes are limited to a few factors, and it is believed that future studies shall address those limitations.

Keywords: socially responsible investment, behavior, pressure sensitive investors, pressure insensitive investors, Institutional Investment Malaysia

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

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In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor

Procedia PDF Downloads 259

Authors: A. N. Santhosh, Vinay Hegde, S. Vinod Kumar, R. Giria, D. L. Rakesh, M. S. Raghu

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At present, research on automobile engineering is in high demand, particularly in the field of fuel combustion. A large number of fossil fuels are being used in combustion, which may get exhausted in the near future and are not economical. To this end, research on the use of magnetic material in combustion engines is in progress to enhance the efficiency of fuel. The present review describes the chemical, physical and mathematical theory behind the magnetic materials along with the working principle of the internal combustion engine. The effect of different magnets like ferrite magnet, Neodymium magnet, and electromagnets was discussed. The effect of magnetic field on the consumption of the fuel, brake thermal efficiency, carbon monoxide, Oxides of Nitrogen, carbon dioxide, and hydrocarbon emission, along with smoke density, have been discussed in detail. Detailed mathematical modelling that shows the effect of magnetic field on fuel combustion is elaborated. Required pictorial representations are included wherever necessary. This review article could serve as a base for studying the effect of magnetic materials on IC engines.

Keywords: magnetic field, energizer, fuel conditioner, fuel consumption, emission reduction

Procedia PDF Downloads 76

Authors: Daniel Bülz, Franziska Lüttich, Sreetama Banerjee, Georgeta Salvan, Dietrich R. T. Zahn

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For the development of electronics, organic semiconductors are of great interest due to their adjustable optical and electrical properties. Especially for spintronic applications they are interesting because of their weak spin scattering, which leads to longer spin life times compared to inorganic semiconductors. It was shown that some organic materials change their resistance if an external magnetic field is applied. Pentacene is one of the materials which exhibit the so called photoinduced magnetoresistance which results in a modulation of photocurrent when varying the external magnetic field. Also the soluble derivate of pentacene, the 6,13-bis (triisopropylsilylethynyl)-pentacene (TIPS-pentacene) exhibits the same negative magnetoresistance. Aiming for simpler fabrication processes, in this work, we compare TIPS-pentacene organic field effect transistors (OFETs) made from solution with those fabricated by thermal evaporation. Because of the different processing, the TIPS-pentacene thin films exhibit different morphologies in terms of crystal size and homogeneity of the substrate coverage. On the other hand, the interface treatment is known to have a high influence on the threshold voltage, eliminating trap states of silicon oxide at the gate electrode and thereby changing the electrical switching response of the transistors. Therefore, we investigate the influence of interface treatment using octadecyltrichlorosilane (OTS) or using a simple cleaning procedure with acetone, ethanol, and deionized water. The transistors consist of a prestructured OFET substrates including gate, source, and drain electrodes, on top of which TIPS-pentacene dissolved in a mixture of tetralin and toluene is deposited by drop-, spray-, and spin-coating. Thereafter we keep the sample for one hour at a temperature of 60 °C. For the transistor fabrication by thermal evaporation the prestructured OFET substrates are also kept at a temperature of 60 °C during deposition with a rate of 0.3 nm/min and at a pressure below 10-6 mbar. The OFETs are characterized by means of optical microscopy in order to determine the overall quality of the sample, i.e. crystal size and coverage of the channel region. The output and transfer characteristics are measured in the dark and under illumination provided by a white light LED in the spectral range from 450 nm to 650 nm with a power density of (8±2) mW/cm2.

Keywords: organic field effect transistors, solution processed, surface treatment, TIPS-pentacene

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Authors: Feicheng Liu, Weiming Liao, Jianjing Zhang

Abstract:

A pile-supported embankment with geosynthetic-reinforced mat (PSGR embankment) has been considered as an effective solution to reduce the total and differential settlement of the embankment constructed over soft soil. In this paper, a new simplified method proposed firstly incorporates the load transfer between piles and surrounding soil and the settlement of pile, and also considers arching effect in embankment fill, membrane effect of geosynthetic reinforcement, and subsoil resistance, to evaluate the behavior of PSGR embankment. Subsoil settlement is assumed to consist of two parts:(1) the settlement of subsoil surface between piles equivalent to that of pile caps assuming the geosynthetic reinforcement without deformation yet; (2) the subsoil subsiding along with the geosynthetic deforming, and the deflected geosynthetic being considered as centenary. The force equilibrium, including loads acting on the upper surface of geosynthetic, subsoil resistance, as well as the stress-strain relationship of the geosynthetic reinforcement at the edge of pile cap, is established, thus the expression of subsoil resistance is deduced, and subsequently the tension of geosynthetic and stress concentration ratio between piles can be calculated. The proposed method is validated through observed data from three field tests and also compared with other eight analytical solutions available in the literature. In addition, a sensitive analysis is provided to demonstrate the influence of with/without considering pile-soil interaction for evaluating the performance of PSGR embankment.

Keywords: pile-supported embankment, geosynthetic, analytical solution, soil arching effect, the settlement of pile, sensitive analysis

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