Search results for: IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device
3227 Indium-Gallium-Zinc Oxide Photosynaptic Device with Alkylated Graphene Oxide for Optoelectronic Spike Processing
Authors: Seyong Oh, Jin-Hong Park
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Recently, neuromorphic computing based on brain-inspired artificial neural networks (ANNs) has attracted huge amount of research interests due to the technological abilities to facilitate massively parallel, low-energy consuming, and event-driven computing. In particular, research on artificial synapse that imitate biological synapses responsible for human information processing and memory is in the spotlight. Here, we demonstrate a photosynaptic device, wherein a synaptic weight is governed by a mixed spike consisting of voltage and light spikes. Compared to the device operated only by the voltage spike, ∆G in the proposed photosynaptic device significantly increased from -2.32nS to 5.95nS with no degradation of nonlinearity (NL) (potentiation/depression values were changed from 4.24/8 to 5/8). Furthermore, the Modified National Institute of Standards and Technology (MNIST) digit pattern recognition rates improved from 36% and 49% to 50% and 62% in ANNs consisting of the synaptic devices with 20 and 100 weight states, respectively. We expect that the photosynaptic device technology processed by optoelectronic spike will play an important role in implementing the neuromorphic computing systems in the future.Keywords: optoelectronic synapse, IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device, optoelectronic spiking process, neuromorphic computing
Procedia PDF Downloads 1683226 Multi-Analyte Indium Gallium Zinc Oxide-Based Dielectric Electrolyte-Insulator-Semiconductor Sensing Membranes
Authors: Chyuan Haur Kao, Hsiang Chen, Yu Sheng Tsai, Chen Hao Hung, Yu Shan Lee
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Dielectric electrolyte-insulator-semiconductor sensing membranes-based biosensors have been intensively investigated because of their simple fabrication, low cost, and fast response. However, to enhance their sensing performance, it is worthwhile to explore alternative materials, distinct processes, and novel treatments. An ISFET can be viewed as a variation of MOSFET with the dielectric oxide layer as the sensing membrane. Then, modulation on the work function of the gate caused by electrolytes in various ion concentrations could be used to calculate the ion concentrations. Recently, owing to the advancement of CMOS technology, some high dielectric materials substrates as the sensing membranes of electrolyte-insulator-semiconductor (EIS) structures. The EIS with a stacked-layer of SiO₂ layer between the sensing membrane and the silicon substrate exhibited a high pH sensitivity and good long-term stability. IGZO is a wide-bandgap (~3.15eV) semiconductor of the III-VI semiconductor group with several preferable properties, including good transparency, high electron mobility, wide band gap, and comparable with CMOS technology. IGZO was sputtered by reactive radio frequency (RF) on a p-type silicon wafer with various gas ratios of Ar:O₂ and was treated with rapid thermal annealing in O₂ ambient. The sensing performance, including sensitivity, hysteresis, and drift rate was measured and XRD, XPS, and AFM analyses were also used to study the material properties of the IGZO membrane. Moreover, IGZO was used as a sensing membrane in dielectric EIS bio-sensor structures. In addition to traditional pH sensing capability, detection for concentrations of Na+, K+, urea, glucose, and creatinine was performed. Moreover, post rapid thermal annealing (RTA) treatment was confirmed to improve the material properties and enhance the multi-analyte sensing capability for various ions or chemicals in solutions. In this study, the IGZO sensing membrane with annealing in O₂ ambient exhibited a higher sensitivity, higher linearity, higher H+ selectivity, lower hysteresis voltage and lower drift rate. Results indicate that the IGZO dielectric sensing membrane on the EIS structure is promising for future bio-medical device applications.Keywords: dielectric sensing membrane, IGZO, hydrogen ion, plasma, rapid thermal annealing
Procedia PDF Downloads 2473225 Benefits of High Power Impulse Magnetron Sputtering (HiPIMS) Method for Preparation of Transparent Indium Gallium Zinc Oxide (IGZO) Thin Films
Authors: Pavel Baroch, Jiri Rezek, Michal Prochazka, Tomas Kozak, Jiri Houska
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Transparent semiconducting amorphous IGZO films have attracted great attention due to their excellent electrical properties and possible utilization in thin film transistors or in photovoltaic applications as they show 20-50 times higher mobility than that of amorphous silicon. It is also known that the properties of IGZO films are highly sensitive to process parameters, especially to oxygen partial pressure. In this study we have focused on the comparison of properties of transparent semiconducting amorphous indium gallium zinc oxide (IGZO) thin films prepared by conventional sputtering methods and those prepared by high power impulse magnetron sputtering (HiPIMS) method. Furthermore we tried to optimize electrical and optical properties of the IGZO thin films and to investigate possibility to apply these coatings on thermally sensitive flexible substrates. We employed dc, pulsed dc, mid frequency sine wave and HiPIMS power supplies for magnetron deposition. Magnetrons were equipped with sintered ceramic InGaZnO targets. As oxygen vacancies are considered to be the main source of the carriers in IGZO films, it is expected that with the increase of oxygen partial pressure number of oxygen vacancies decreases which results in the increase of film resistivity. Therefore in all experiments we focused on the effect of oxygen partial pressure, discharge power and pulsed power mode on the electrical, optical and mechanical properties of IGZO thin films and also on the thermal load deposited to the substrate. As expected, we have observed a very fast transition between low- and high-resistivity films depending on oxygen partial pressure when deposition using conventional sputtering methods/power supplies have been utilized. Therefore we established and utilized HiPIMS sputtering system for enlargement of operation window for better control of IGZO thin film properties. It is shown that with this system we are able to effectively eliminate steep transition between low and high resistivity films exhibited by DC mode of sputtering and the electrical resistivity can be effectively controlled in the wide resistivity range of 10-² to 10⁵ Ω.cm. The highest mobility of charge carriers (up to 50 cm2/V.s) was obtained at very low oxygen partial pressures. Utilization of HiPIMS also led to significant decrease in thermal load deposited to the substrate which is beneficial for deposition on the thermally sensitive and flexible polymer substrates. Deposition rate as a function of discharge power and oxygen partial pressure was also systematically investigated and the results from optical, electrical and structure analysis will be discussed in detail. Most important result which we have obtained demonstrates almost linear control of IGZO thin films resistivity with increasing of oxygen partial pressure utilizing HiPIMS mode of sputtering and highly transparent films with low resistivity were prepared already at low pO2. It was also found that utilization of HiPIMS technique resulted in significant improvement of surface smoothness in reactive mode of sputtering (with increasing of oxygen partial pressure).Keywords: charge carrier mobility, HiPIMS, IGZO, resistivity
Procedia PDF Downloads 2933224 Highly-Efficient Photoreaction Using Microfluidic Device
Authors: Shigenori Togashi, Yukako Asano
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We developed an effective microfluidic device for photoreactions with low reflectance and good heat conductance. The performance of this microfluidic device was tested by carrying out a photoreactive synthesis of benzopinacol and acetone from benzophenone and 2-propanol. The yield reached 36% with an irradiation time of 469.2 s and was improved by more than 30% when compared to the values obtained by the batch method. Therefore, the microfluidic device was found to be effective for improving the yields of photoreactions.Keywords: microfluidic device, photoreaction, black aluminum oxide, benzophenone, yield improvement
Procedia PDF Downloads 2383223 Key Roles of the N-Type Oxide Layer in Hybrid Perovskite Solar Cells
Authors: Thierry Pauporté
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Wide bandgap n-type oxide layers (TiO2, SnO2, ZnO etc.) play key roles in perovskite solar cells. They act as electron transport layers, and they permit the charge separation. They are also the substrate for the preparation of perovskite in the direct architecture. Therefore, they have a strong influence on the perovskite loading, its crystallinity and they can induce a degradation phenomenon upon annealing. The interface between the oxide and the perovskite is important, and the quality of this heterointerface must be optimized to limit the recombination of charges phenomena and performance losses. One can also play on the oxide and use two oxide contact layers for improving the device stability and durability. These aspects will be developed and illustrated on the basis of recent results obtained at Chimie-ParisTech.Keywords: oxide, hybrid perovskite, solar cells, impedance
Procedia PDF Downloads 3113222 Fabrication and Analysis of Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS)
Authors: Deepika Sharma, Bal Krishan
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In this paper, the structure of N-channel VDMOS was designed and analyzed using Silvaco TCAD tools by varying N+ source doping concentration, P-Body doping concentration, gate oxide thickness and the diffuse time. VDMOS is considered to be ideal power switches due to its high input impedance and fast switching speed. The performance of the device was analyzed from the Ids vs Vgs curve. The electrical characteristics such as threshold voltage, gate oxide thickness and breakdown voltage for the proposed device structures were extarcted. Effect of epitaxial layer on various parameters is also observed.Keywords: on-resistance, threshold voltage, epitaxial layer, breakdown voltage
Procedia PDF Downloads 3223221 Fabrication of Periodic Graphene-Like Structure of Zinc Oxide Piezoelectric Device
Authors: Zi-Gui Huang, Shen-Hsien Hu
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This study proposes a fabrication of phononic-crystal acoustic wave device. A graphene-like atomic structure was adopted as the main research subject, and a graphene-like structure was designed using piezoelectric material zinc oxide and its periodic boundary conditions were defined using the finite element method. The effects of a hexagonal honeycomb structure were investigated regarding the band gap phenomenon. The use of micro-electromechanical systems process technology to make the film etched micron graphics, designed to produce four kinds of different piezoelectric structure (plat, periodic, single defect and double defects). Frequency response signals and phase change were also measured in this paper.Keywords: MEMS, phononic crystal, piezoelectric material, Zinc oxide
Procedia PDF Downloads 5273220 Performance Improvement of SOI-Tri Gate FinFET Transistor Using High-K Dielectric with Metal Gate
Authors: Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza
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SOI TRI GATE FinFET transistors have emerged as novel devices due to its simple architecture and better performance: better control over short channel effects (SCEs) and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2 nm, leakage currents due to tunneling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO2 gate oxide with a high-κ material allows increased gate capacitance without the associated leakage effects. In this paper, SOI TRI-GATE FinFET structure with use of high K dielectric materials (HfO2) and SiO2 dielectric are simulated using the 3-D device simulator Devedit and Atlas of TCAD Silvaco. The simulated results exhibits significant improvements in the performances of SOI TRI GATE FinFET with gate oxide HfO2 compared with conventional gate oxide SiO2 for the same structure. SOI TRI-GATE FinFET structure with the use of high K materials (HfO2) in gate oxide results into the increase in saturation current, threshold voltage, on-state current and Ion/Ioff ratio while off-state current, subthreshold slope and DIBL effect are decreased.Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, SOI-TRI Gate FinFET, high-K dielectric, Silvaco software
Procedia PDF Downloads 3403219 Electrochemically Reduced Graphene Oxide Modified Boron-Doped Diamond Paste Electrode on Paper-Based Analytical Device for Simultaneous Determination of Norepinephrine and Serotonin
Authors: Siriwan Nantaphol, Robert B. Channon, Takeshi Kondo, Weena Siangproh, Orawon Chailapakul, Charles S. Henry
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In this work, we demonstrate a novel electrochemically reduced graphene oxide (ERGO) modified boron-doped diamond paste (BDDP) electrode on paper-based analytical devices (PADs) for simultaneous determination of norepinephrine (NE) and serotonin (5-HT). The BDD paste electrode was easily constructed by filling BDD paste in small channels, which made in transparency film sheets using a CO₂ laser etching system. The counter and reference electrodes were fabricated on paper by in-house screen-printing and then combined with BDD paste microelectrode. The electrochemical characterization of the device was investigated by cyclic voltammetry (CV). Differential pulse voltammetry (DPV) was employed for the simultaneous determination of NE and 5-HT. The ERGO-modified BDDP electrode displayed excellent electrocatalytic activities toward the oxidation of NE and 5-HT and strong function for resolving the overlapping voltammetric responses of NE and 5-HT into two well-defined voltammetric peaks. This device was capable of simultaneously detecting NE and 5-HT in wide concentration ranges and with a low limit of detections. In addition, it has the advantages in terms of ease of use, low cost, and disposability.Keywords: boron-doped diamond paste electrode, electrochemically reduced graphene oxide, norepinephrine, paper-based analytical device, serotonin
Procedia PDF Downloads 2533218 Flexible Polyaniline-Based Composite Films for High-Performance Super Capacitors
Authors: A. Khosrozadeh, M. A. Darabi, M. Xing, Q. Wang
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Fabrication of a high-performance supercapacitor (SC) using a flexible cellulose-based composite film of polyaniline (PANI), reduced graphene oxide (RGO), and silver nanowires (AgNWs) is reported. The flexibility, high capacitive behaviour, and cyclic stability of the entire device make it a good candidate for wearable SCs. The results show that a capacitance as high as 73.4 F/g (1.6 F/cm2) at a discharge rate of 1.1 A/g is achieved by the device. In addition, the SC demonstrates a power density up to 468.8 W/kg and an energy density up to 5.1 wh/kg. The flexibility of the composite film is attributed to the binding effect of cellulose fibers as well as reinforcing effect of AgNWs. The excellent electrochemical performance of the device is found to be owing to the synergistic effect between PANI/RGO/AgNWs ternary in a cushiony cellulose matrix and porous structure of the composite.Keywords: cellulose, polyaniline, reduced graphene oxide, silver, super capacitor
Procedia PDF Downloads 4213217 Copper Doped P-Type Nickel Oxide Transparent Conducting Oxide Thin Films
Authors: Kai Huang, Assamen Ayalew Ejigu, Mu-Jie Lin, Liang-Chiun Chao
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Nickel oxide and copper-nickel oxide thin films have been successfully deposited by reactive ion beam sputter deposition. Experimental results show that nickel oxide deposited at 300°C is single phase NiO while best crystalline quality is achieved with an O_pf of 0.5. XRD analysis of nickel-copper oxide deposited at 300°C shows a Ni2O3 like crystalline structure at low O_pf while changes to NiO like crystalline structure at high O_pf. EDS analysis shows that nickel-copper oxide deposited at low O_pf is CuxNi2-xO3 with x = 1, while nickel-copper oxide deposited at high O_pf is CuxNi1-xO with x = 0.5, which is supported by Raman analysis. The bandgap of NiO is ~ 3.5 eV regardless of O_pf while the band gap of nickel-copper oxide decreases from 3.2 to 2.3 eV as Opf reaches 1.0.Keywords: copper, ion beam, NiO, oxide, resistivity, transparent
Procedia PDF Downloads 3063216 To Investigate the Effects of Potassium Ion Doping and Oxygen Vacancies in Thin-Film Transistors of Gallium Oxide-Indium Oxide on Their Electrical
Authors: Peihao Huang, Chun Zhao
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Thin-film transistors(TFTs) have the advantages of low power consumption, short reaction time, and have high research value in the field of semiconductors, based on this reason, people have focused on gallium oxide-indium oxide thin-film transistors, a relatively common thin-film transistor, elaborated and analyzed his production process, "aqueous solution method", explained the purpose of each step of operation, and finally explored the influence of potassium ions doped in the channel layer on the electrical properties of the device, as well as the effect of oxygen vacancies on its switching ratio and memory, and summarized the conclusions.Keywords: aqueous solution, oxygen vacancies, switch ratio, thin-film transistor(TFT)
Procedia PDF Downloads 1043215 Green Synthesis of Copper Oxide and Cobalt Oxide Nanoparticles Using Spinacia Oleracea Leaf Extract
Authors: Yameen Ahmed, Jamshid Hussain, Farman Ullah, Sohaib Asif
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The investigation aims at the synthesis of copper oxide and cobalt oxide nanoparticles using Spinacia oleracea leaf extract. These nanoparticles have many properties and applications. They possess antimicrobial catalytic properties and also they can be used in energy storage materials, gas sensors, etc. The Spinacia oleracea leaf extract behaves as a reducing agent in nanoparticle synthesis. The plant extract was first prepared and then treated with copper and cobalt salt solutions to get the precipitate. The salt solutions used for this purpose are copper sulfate pentahydrate (CuSO₄.5H₂O) and cobalt chloride hexahydrate (CoCl₂.6H₂O). The UV-Vis, XRD, EDX, and SEM techniques are used to find the optical, structural, and morphological properties of copper oxide and cobalt oxide nanoparticles. The UV absorption peaks are at 326 nm and 506 nm for copper oxide and cobalt oxide nanoparticles.Keywords: cobalt oxide, copper oxide, green synthesis, nanoparticles
Procedia PDF Downloads 2033214 Evaluation of Total Antioxidant Activity (TAC) of Copper Oxide Decorated Reduced Graphene Oxide (CuO-rGO) at Different Stirring time
Authors: Aicha Bensouici, Assia Mili, Naouel Rdjem, Nacera Baali
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Copper oxide decorated reduced graphene oxide (GO) was obtained successfully using two steps route synthesis was used. Firstly, graphene oxide was obtained using a modified Hummers method by excluding sodium nitrate from starting materials. After washing-centrifugation routine pristine GO was decorated by copper oxide using a refluxation technique at 120°C during 2h, and an equal amount of GO and copper acetate was used. Three CuO-rGO nanocomposite samples types were obtained at 30min, 24h, and 7 day stirring time. TAC results show dose dependent behavior of CuO-rGO and confirm no influence of stirring time on antioxidant properties, 30min is considered as an optimal stirring condition.Keywords: copper oxide, reduced graphene oxide, TAC, GO
Procedia PDF Downloads 973213 High Quality Gallium Oxide Microstructures by Catalyst-Free Thermal Oxidation
Authors: Jiang-Bei Qin, Rui-Xia Miao, Wei Ren
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In this study, high crystalline gallium oxide microstructures (wires, belts, and sheets) were synthesized by catalyst-free thermal oxidation. Structural studies such as X-ray diffraction, Raman and transmission electron microscope (TEM) investigations on the microstructures showed monoclinic phase of gallium oxide and single crystalline structure. The scanning electron microscopy (SEM) observations revealed that a huge super microsheet even grows up to 450 µm in length and 206 µm in width. Gallium oxide microstructures exhibit high crystallinity along (002) and (401), respectively. The PL spectrum of these microstructures excites a blue light band centered at 441 and 489nm. The growth mechanism of gallium oxide microstructures is discussed. These gallium oxide microstructures have great potential in functional devices.Keywords: catalyst-free, gallium oxide, microstructures, thermal oxide
Procedia PDF Downloads 1813212 Nitrite Sensor Platform Functionalized Reduced Graphene Oxide with Thionine Dye Based
Authors: Nurulasma Zainudin, Mashitah Mohd Yusoff, Kwok Feng Chong
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Functionalized reduced graphene oxide is essential importance for their end applications. Chemical functionalization of reduced graphene oxide with strange atoms is a leading strategy to modify the properties of the materials moreover maintains the inherent properties of reduced graphene oxide. A thionine functionalized reduce graphene oxide electrode was fabricated and was used to electrochemically determine nitrite. The electrochemical behaviour of thionine functionalized reduced graphene oxide towards oxidation of nitrite via cyclic voltammetry was studied and the proposed method exhibited enhanced electrocatalytic behaviour.Keywords: nitrite, sensor, thionine, reduced graphene oxide
Procedia PDF Downloads 4373211 Fabrication of Graphene Oxide Based Planar Hetero-Junction Perovskite Solar Cells
Authors: Khursheed Ahmad, Shaikh M. Mobin
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In this work, we have developed a highly stable planar heterojunction perovskite solar cells (PSCs) with a architecture (ITO/GO/PEDOT:PSS/MAPbI3/PCBM/Carbon tape). The PSCs was fabricated under air using GO/PEDOT:PSS as hole transport layer while the carbon tape used as a back contact to complete the device. The fabricated PSCs device exhibited good stability and performance in terms of power conversion efficiency of 5.2%. The PSCs devices were exposed to ambient condition for 4 days which shows excellent stability confirmed by XRD analysis. We believed that the stability of the planar heterojunction perovskite solar cell may be due the presence of GO which inhibits the direct contact between PEDOT:PSS and MAPbI3.Keywords: graphene oxide, perovskite solar cells, hole transport layer, PEDOT:PSS
Procedia PDF Downloads 1713210 Total Thermal Resistance of Graphene-Oxide-Substrate Stack: Role of Interfacial Thermal Resistance in Heat Flow of 2D Material Based Devices
Authors: Roisul H. Galib, Prabhakar R. Bandaru
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In 2D material based device, an interface between 2D materials and substrates often limits the heat flow through the device. In this paper, we quantify the total thermal resistance of a graphene-based device by series resistance model and show that the thermal resistance at the interface of graphene and substrate contributes to more than 50% of the total resistance. Weak Van der Waals interactions at the interface and dissimilar phonon vibrational modes create this thermal resistance, allowing less heat to flow across the interface. We compare our results with commonly used materials and interfaces, demonstrating the role of the interface as a potential application for heat guide or block in a 2D material-based device.Keywords: 2D material, graphene, thermal conductivity, thermal conductance, thermal resistance
Procedia PDF Downloads 1413209 Spiking Behavior in Memristors with Shared Top Electrode Configuration
Authors: B. Manoj Kumar, C. Malavika, E. S. Kannan
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The objective of this study is to investigate the switching behavior of two vertically aligned memristors connected by a shared top electrode, a configuration that significantly deviates from the conventional single oxide layer sandwiched between two electrodes. The device is fabricated by bridging copper electrodes with mechanically exfoliated van der Waals metal (specifically tantalum disulfide and tantalum diselenide). The device demonstrates threshold-switching behavior in its I-V characteristics. When the input voltage signal is ramped with voltages below the threshold, the output current shows spiking behavior, resembling integrated and firing actions without extra circuitry. We also investigated the self-reset behavior of the device. Using a continuous constant voltage bias, we activated the device to the firing state. After removing the bias and reapplying it shortly afterward, the current returned to its initial state. This indicates that the device can spontaneously return to its resting state. The outcome of this investigation offers a fresh perspective on memristor-based device design and an efficient method to construct hardware for neuromorphic computing systems.Keywords: integrated and firing, memristor, spiking behavior, threshold switching
Procedia PDF Downloads 533208 Investigation into Black Oxide Coating of 410 Grade Surgical Stainless Steel Using Alkaline Bath Treatment
Authors: K. K. Saju, A. R. Reghuraj
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High reflectance of surgical instruments under bright light hinders the visual clarity during laparoscopic surgical procedures leading to loss of precision and device control and creates strain and undesired difficulties to surgeons. Majority of the surgical instruments are made of surgical grade steel. Instruments with a non reflective surface can enhance the visual clarity during precision surgeries. A conversion coating of black oxide has been successfully developed 410 grade surgical stainless steel .The characteristics of the developed coating suggests the application of this technique for developing 410 grade surgical instruments with minimal reflectance.Keywords: conversion coatings, 410 stainless steel, black oxide, reflectance
Procedia PDF Downloads 4493207 Facile Fabrication of Nickel/Zinc Oxide Hollow Spheres Nanostructure and Photodegradation of Congo Red
Authors: Seyed Mohsen Mousavi, Ali Reza Mahjoub, Behjat Afshari
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In this work, Nickel/Zinc Oxide hollow spherical structures with high surface area using the template Fructose was prepared by the hydrothermal method using a ultrasonic bath at room temperature was produced and were identified by FTIR, XRD, FE-SEM. The photocatalytic activity of synthesized hollow spherical Nickel/Zinc Oxide was studied in the destruction of Congo red as Azo dye. The results showed that the photocatalytic activity of Nickel/ Zinc Oxide hollow spherical nanostructures is improved compared with zinc oxide hollow sphere and other morphologies.Keywords: azo dye, hollow spheres, photocatalyst, nickel/zinc oxide
Procedia PDF Downloads 6283206 Covalent Functionalization of Graphene Oxide with Aliphatic Polyisocyanate
Authors: E. Changizi, E. Ghasemi, B. Ramezanzadeh, M. Mahdavian
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In this study, the graphene oxide was functionalized with polyisocyanate (piGO). The functionalization was carried out at 45⁰C for 24 hrs under nitrogen atmosphere. The X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FT-IR) and thermal gravimetric analysis (TGA) were utilized in order to evaluate the GO functionalization. The GO and piGO stability were then investigated in polar and nonpolar solvents. Results obtained showed that polyisocyanate was successfully grafted on the surface of graphen oxide sheets through covalent bonds formation. The surface nature of the graphen oxide was changed into the hydrophobic after functionalization. Moreover, the graphen oxide sheets interlayer distance increased after modification.Keywords: graphen oxide, functionalization, polyisocyanate, XRD, TGA, FTIR
Procedia PDF Downloads 4403205 Characterization Techniques for Studying Properties of Nanomaterials
Authors: Nandini Sharma
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Monitoring the characteristics of a nanostructured material comprises measurements of structural, morphological, mechanical, optical and electronic properties of the synthesized nanopowder and different layers and coatings of nanomaterials coated on transparent conducting oxides (TCOs) substrates like fluorine doped tin oxide (FTO) or Indium doped tin oxide (ITO). This article focuses on structural and optical characterization with emphasis on measurements of the photocatalytic efficiency as a photocatalyst and their interpretation to extract relevant information about various TCOs and materials, their emitter regions, and surface passivation. It also covers a brief description of techniques based on photoluminescence that can portray high resolution pictorial graphs for application as solar energy devices. With the advancement in the scientific techniques, detailed information about the structural, morphological, and optical properties can be investigated, which is further useful for engineering and designing of an efficient device. The common principles involved in the prevalent characterization techniques aid to illustrate the range of options that can be broadened in near future for acurate device characterization and diagnosis.Keywords: characterization, structural, optical, nanomaterial
Procedia PDF Downloads 1393204 Synthesis of Magnesium Oxide in Spinning Disk Reactor and Its Applications in Cycloaddition of Carbon Dioxide to Epoxides
Authors: Tzu-Wen Liu, Yi-Feng Lin, Yu-Shao Chen
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CO_2 is believed to be partly responsible for changes to the global climates. Carbon capture and storage (CCS) is one way to reduce carbon dioxide emissions in the past. Recently, how to convert the captured CO_2 into fine chemicals gets lots of attention owing to reducing carbon dioxide emissions and providing greener feedstock for the chemicals industry. A variety of products can be manufactured from carbon dioxide and the most attractive products are cyclic carbonates. Therefore, the kind of catalyst plays an important role in cycloaddition of carbon dioxide to epoxides. Magnesium oxide can be an efficiency heterogeneous catalyst for the cycloaddition of carbon dioxide to epoxides because magnesium oxide has both acid and base active sites and can provide the adsorption of carbon dioxide, promoting ring-opening reaction. Spinning disk reactor (SDR) is one of the device of high-gravity technique and has successfully used for synthesis of nanoparticles by precipitation methods because of the high mass transfer rate. Synthesis of nanoparticles in SDR has advantages of low energy consumption and easy to scale up. The aim of this research is to synthesize magnesium hydroxide nanoparticles in SDR as precursors for magnesium oxide. Experimental results showed that the calcination temperature of magnesium hydroxide to magnesium oxide, and the pressure and temperature of cycloaddition reaction had significantly effect on the conversion and selectivity of the reaction.Keywords: magnesium oxide, catalyst, cycloaddition, spinning disk reactor, carbon dioxide
Procedia PDF Downloads 2883203 Zinc Oxide Nanowires: Device Fabrication and Optical Properties
Authors: Igori Wallace
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Zinc oxide (ZnO) nanowires with hexagonal structure were successfully synthesized by the chemical bath deposition technique. The obtained nanowires were characterized by scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDX). The SEM micrographs revealed the morphology of ZnO nanowires with the diameter between 170.3 and 481nm and showed that the normal pH of the bath solution, 8.1 is the optimized value to form ZnO nanowires with the hexagonal shape. The compositional (EDX) analysis revealed the elemental compositions of samples and confirmed the presence of Zn and O.Keywords: crystallite, chemical bath deposition technique, hexagonal, morphology, nanowire
Procedia PDF Downloads 3053202 Removal of Nickel and Zinc Ions from Aqueous Solution by Graphene Oxide and Graphene Oxide Functionalized Glycine
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In this study, removal of Nickel and Zinc by graphene oxide and functionalized graphene oxide–gelaycin surfaces was examined. Amino group was added to surface of graphene oxide to produced functionalized graphene oxide–gelaycin. Effect of contact time and initial concentration of Ni (II) and Zn(II) ions were studied. Results showed that with increase of initial concentration of Ni (II) and Zn(II) adsorption capacity was increased. After 50 min has not a large change at adsorption capacity therefore, 50 min was selected as optimaze time. Scanning electron microscope (SEM) and fourier transform infrared (FT-IR) spectroscopy spectra used for the analysis confirmed the successful fictionalization of the Graphene oxide surface. Adsorption experiments of Ni (II) and Zn(II) ions graphene oxide and functionalized graphene oxide–gelaycin surfaces fixed at 298 K and pH=6. The Pseudo Firs-order and the Pseudo Second-order (types I, II, III and IV) kinetic models were tested for adsorption process and results showed that the kinetic parameters best fits with to type (I) of pseudo-second-order model because presented low X2 values and also high R2 values.Keywords: graphene oxide, gelaycin, nickel, zinc, adsorption, kinetic, graphene oxide, gelaycin, nickel, zinc, adsorption, kinetic
Procedia PDF Downloads 3013201 Delamination of Scale in a Fe Carbon Steel Surface by Effect of Interface Roughness and Oxide Scale Thickness
Authors: J. M. Lee, W. R. Noh, C. Y. Kim, M. G. Lee
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Delamination of oxide scale has been often discovered at the interface between Fe carbon steel and oxide scale. Among several mechanisms of this delamination behavior, the normal tensile stress to the substrate-scale interface has been described as one of the main factors. The stress distribution at the interface is also known to be affected by thermal expansion mismatch between substrate and oxide scale, creep behavior during cooling and the geometry of the interface. In this study, stress states near the interface in a Fe carbon steel with oxide scale have been investigated using FE simulations. The thermal and mechanical properties of oxide scales are indicated in literature and Fe carbon steel is measured using tensile testing machine. In particular, the normal and shear stress components developed at the interface during bending are investigated. Preliminary numerical sensitivity analyses are provided to explain the effects of the interface geometry and oxide thickness on the delamination behavior.Keywords: oxide scale, delamination, Fe analysis, roughness, thickness, stress state
Procedia PDF Downloads 3393200 Fabrication of Tin Oxide and Metal Doped Tin Oxide for Gas Sensor Application
Authors: Goban Kumar Panneer Selvam
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In past years, there is lots of death caused due to harmful gases. So its very important to monitor harmful gases for human safety, and semiconductor material play important role in producing effective gas sensors.A novel solvothermal synthesis method based on sol-gel processing was prepared to deposit tin oxide thin films on glass substrate at high temperature for gas sensing application. The structure and morphology of tin oxide were analyzed by X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The SEM analysis of how spheres shape in tin oxide nanoparticles. The structure characterization of tin oxide studied by X-ray diffraction shows 8.95 nm (calculated by sheers equation). The UV visible spectroscopy indicated a maximum absorption band shown at 390 nm. Further dope tin oxide with selected metals to attain maximum sensitivity using dip coating technique with different immersion and sensing characterization are measured.Keywords: tin oxide, gas sensor, chlorine free, sensitivity, crystalline size
Procedia PDF Downloads 1373199 Experimental Investigation for Reducing Emissions in Maritime Industry
Authors: Mahmoud Ashraf Farouk
Abstract:
Shipping transportation is the foremost imperative mode of transportation in universal coordination. At display, more than 2/3 of the full worldwide exchange volume accounts for shipping transportation. Ships are utilized as an implies of marine transportation, introducing large-power diesel motors with exhaust containing nitrogen oxide NOx, sulfur oxide SOx, carbo di-oxide CO₂, particular matter PM10, hydrocarbon HC and carbon mono-oxide CO which are the most dangerous contaminants found in exhaust gas from ships. Ships radiating a large amount of exhaust gases have become a significant cause of pollution in the air in coastal areas, harbors and oceans. Therefore, IMO (the International Maritime Organization) has established rules to reduce this emission. This experiment shows the measurement of the exhaust gases emitted from the Aida IV ship's main engine using marine diesel oil fuel (MDO). The measurement is taken by the Sensonic2000 device on 85% load, which is the main sailing load. Moreover, the paper studies different emission reduction technologies as an alternative fuel, which as liquefied natural gas (LNG) applied to the system and reduction technology which is represented as selective catalytic reduction technology added to the marine diesel oil system (MDO+SCR). The experiment calculated the amount of nitrogen oxide NOx, sulfur oxide SOx, carbon-di-oxide CO₂, particular matter PM10, hydrocarbon HC and carbon mono-oxide CO because they have the most effect on the environment. The reduction technologies are applied on the same ship engine with the same load. Finally, the study found that MDO+SCR is the more efficient technology for the Aida IV ship as a training and supply ship due to low consumption and no need to modify the engine. Just add the SCR system to the exhaust line, which is easy and cheapest. Moreover, the differences between them in the emission are not so big.Keywords: marine, emissions, reduction, shipping
Procedia PDF Downloads 703198 Characterization of Graphene Oxide Coated Gold Electrodes for Bioimpedance Measurements
Authors: Fatma Gülden Şi̇mşek, Osman Meli̇h Can, Mehmet Yumak, Bora Gari̇pcan, Yekta Ülgen
Abstract:
In this study, the impedance spectroscopy is used as a detection tool in order to characterize surface coating with graphene oxide. Gold electrodes are produced by standard lithography procedures and then coated with graphene oxide using self-assembly method. The impedance of redox solution through bare gold electrodes and graphene oxide coated gold electrodes is measured in the low and high frequency range. The graphene oxide coating reduces the impedance value of the gold electrode and this reduction is distinguishable in the low-frequency range.Keywords: bioimpedance, electrode characterization, graphene oxide, gold electrodes, impedance spectroscopy
Procedia PDF Downloads 536