Search results for: thin film resistive sensor

Authors: Prajna Paramita Mohapatra, Pamu Dobbidi

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Lithium ferrite (LiFe5O8) has potential applications as a component of microwave magnetic devices such as circulators and monolithic integrated circuits. For efficient device applications, spinel ferrites in the form of thin films are highly required. It is necessary to improve their magnetic and dielectric behavior by optimizing the processing parameters during deposition. The lithium ferrite thin films are deposited on Pt/Si substrate using the pulsed laser deposition technique (PLD). As controlling the film thickness is the easiest parameter to tailor the strain, we deposited the thin films having different film thicknesses (160 nm, 200 nm, 240 nm) at oxygen partial pressure of 0.001 mbar. The formation of single phase with spinel structure (space group - P4132) is confirmed by the XRD pattern and the Rietveld analysis. The optical bandgap is decreased with the increase in thickness. FESEM confirmed the formation of uniform grains having well separated grain boundaries. Further, the film growth and the roughness are analyzed by AFM. The root-mean-square (RMS) surface roughness is decreased from 13.52 nm (160 nm) to 9.34 nm (240 nm). The room temperature magnetization is measured with a maximum field of 10 kOe. The saturation magnetization is enhanced monotonically with an increase in thickness. The magnetic resonance linewidth is obtained in the range of 450 – 780 Oe. The dielectric response is measured in the frequency range of 104 – 106 Hz and in the temperature range of 303 – 473 K. With an increase in frequency, the dielectric constant and the loss tangent of all the samples decreased continuously, which is a typical behavior of conventional dielectric material. The real part of the dielectric constant and the dielectric loss is increased with an increase in thickness. The contribution of grain and grain boundaries is also analyzed by employing the equivalent circuit model. The highest dielectric constant is obtained for the film having a thickness of 240 nm at 104 Hz. The obtained results demonstrate that desired response can be obtained by tailoring the film thickness for the microwave magnetic devices.

Keywords: PLD, optical response, thin films, magnetic response, dielectric response

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Authors: Sanjeev Kumar Raghuwanshi, Yadvendra Singh

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The objective of this paper is to develop and optimize the Fiber Bragg (FBG) grating based Surface Plasmon Resonance (SPR) sensor for monitoring the hazardous toxic chemicals and gases in underground mines or any industrial area. A fully cladded telecommunication standard FBG is proposed to develop to produce surface plasmon resonance. A thin few nm gold/silver film (subject to optimization) is proposed to apply over the FBG sensing head using e-beam deposition method. Sensitivity enhancement of the sensor will be done by adding a composite nanostructured Graphene Oxide (GO) sensing layer using the spin coating method. Both sensor configurations suppose to demonstrate high responsiveness towards the changes in resonance wavelength. The GO enhanced sensor may show increased sensitivity of many fold compared to the gold coated traditional fibre optic sensor. Our work is focused on to optimize GO, multilayer structure and to develop fibre coating techniques that will serve well for sensitive and multifunctional detection of hazardous chemicals. This research proposal shows great potential towards future development of optical fiber sensors using readily available components such as Bragg gratings as highly sensitive chemical sensors in areas such as environmental sensing.

Keywords: surface plasmon resonance, fibre Bragg grating, sensitivity, toxic gases, MATRIX method

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Authors: Hsyi-En Cheng, Ying-Yi Liou

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Metal-oxide semiconductor (MOS) gas sensors are widely used in the gas-detection market due to their high sensitivity, fast response, and simple device structures. However, the high working temperature of MOS gas sensors makes them difficult to integrate with the appliance or consumer goods. One-dimensional (1-D) nanostructures are considered to have the potential to lower their working temperature due to their large surface-to-volume ratio, confined electrical conduction channels, and small feature sizes. Unfortunately, the difficulty of fabricating 1-D nanostructure electrodes has hindered the development of low-temperature MOS gas sensors. In this work, we proposed a method to fabricate nanotube-arrays, and the SnO₂ nanotube-array sensors with different wall thickness were successfully prepared and examined. The fabrication of SnO₂ nanotube arrays incorporates the techniques of barrier-free anodic aluminum oxide (AAO) template and atomic layer deposition (ALD) of SnO₂. First, 1.0 µm Al film was deposited on ITO glass substrate by electron beam evaporation and then anodically oxidized by five wt% phosphoric acid solution at 5°C under a constant voltage of 100 V to form porous aluminum oxide. As the Al film was fully oxidized, a 15 min over anodization and a 30 min post chemical dissolution were used to remove the barrier oxide at the bottom end of pores to generate a barrier-free AAO template. The ALD using reactants of TiCl4 and H₂O was followed to grow a thin layer of SnO₂ on the template to form SnO₂ nanotube arrays. After removing the surface layer of SnO₂ by H₂ plasma and dissolving the template by 5 wt% phosphoric acid solution at 50°C, upright standing SnO₂ nanotube arrays on ITO glass were produced. Finally, Ag top electrode with line width of 5 μm was printed on the nanotube arrays to form SnO₂ nanotube-array sensor. Two SnO₂ nanotube-arrays with wall thickness of 30 and 60 nm were produced in this experiment for the evaluation of gas sensing ability. The flat SnO₂ films with thickness of 30 and 60 nm were also examined for comparison. The results show that the properties of ALD SnO₂ films were related to the deposition temperature. The films grown at 350°C had a low electrical resistivity of 3.6×10-3 Ω-cm and were, therefore, used for the nanotube-array sensors. The carrier concentration and mobility of the SnO₂ films were characterized by Ecopia HMS-3000 Hall-effect measurement system and were 1.1×1020 cm-3 and 16 cm3/V-s, respectively. The electrical resistance of SnO₂ film and nanotube-array sensors in air and in a 5% H₂-95% N₂ mixture gas was monitored by Pico text M3510A 6 1/2 Digits Multimeter. It was found that, at 200 °C, the 30-nm-wall SnO₂ nanotube-array sensor performs the highest responsivity to 5% H₂, followed by the 30-nm SnO₂ film sensor, the 60-nm SnO₂ film sensor, and the 60-nm-wall SnO₂ nanotube-array sensor. However, at temperatures below 100°C, all the samples were insensitive to the 5% H₂ gas. Further investigation on the sensors with thinner SnO₂ is necessary for improving the sensing ability at temperatures below 100 °C.

Keywords: atomic layer deposition, nanotube arrays, gas sensor, tin dioxide

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Authors: Monika Singh

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A carbon nanotube thin film coated on dielectric interface is employed to produce THz surface plasma wave (SPW). The carbon nanotube has its plasmon frequency in the THz range. The SPW field falls off away from the metal film both inside the dielectric as well as in free space. An amplitude modulated laser pulse normally incident, from free space on slow wave structure, exert a modulation frequency ponderomotive force on the free electrons of the CNT film and resonantly excite the THz surface plasma wave at the modulation frequency. Carbon nanotube based plasmonic nano-structure materials provides potentially more versatile approach to tightly confined surface modes in the THz range in comparison to noble metals.

Keywords: surface plasmons, surface waves, thin films, THz radiation

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Authors: Abbasali Abouei Mehrizi, Hao Wang

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The thin film region is so important in heat transfer process due to its low thermal resistance. On the other hand, the dynamic contact angle is crucial boundary condition in numerical simulations. While different modeling contains different assumption of the microscopic contact angle, none of them has experimental evidence for their assumption, and the contact line movement mechanism still remains vague. The experimental investigation in complete wetting is more popular than partial wetting, especially in nanoscale resolution when there is sharp variation in thin film profile in partial wetting. In the present study, an experimental investigation of water film morphology near the triple phase contact line during the condensation is performed. The state-of-the-art tapping-mode atomic force microscopy (TM-AFM) was used to get the high-resolution film profile goes down to 2 nm from the contact line. The droplet was put in saturated chamber. The pristine silicon wafer was used as a smooth substrate. The substrate was heated by PI film heater. So the chamber would be over saturated by droplet evaporation. By turning off the heater, water vapor gradually started condensing on the droplet and the droplet advanced. The advancing speed was less than 20 nm/s. The dominant results indicate that in contrast to nonvolatile liquid, the film profile goes down straightly to the surface till 2 nm from the substrate. However, small bending has been observed below 20 nm, occasionally. So, it can be claimed that for the low condensation rate the microscopic contact angle equals to the optically detectable macroscopic contact angle. This result can be used to simplify the heat transfer modeling in partial wetting. The experimental result of the equality of microscopic and macroscopic contact angle can be used as a solid evidence for using this boundary condition in numerical simulation.

Keywords: advancing, condensation, microscopic contact angle, partial wetting

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Authors: F. Djaafar, B. Hadri, G. Bachir

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This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.

Keywords: heterojunction, modeling, simulation, thin film, Tcad Silvaco

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Authors: Sarathlal Koyiloth Vayalil, Stephan V. Roth, Gonzalo Santoro, Peng Zhang, Matthias Schwartzkopf, Bjoern Beyersdorff

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Nanostructured magnetic thin films have gained significant relevance due to its applications in magnetic storage and recording media. Self-organized arrays of nanoparticles and nanowires can be produced by depositing metal thin films on nano-rippled substrates. The substrate topography strongly affects the film growth giving rise to anisotropic properties (optical, magnetic, electronic transport). Ion-beam erosion (IBE) method can provide large-area patterned substrates with the valuable possibility to widely modify pattern length scale by simply acting on ion beam parameters (i.e. energy, ions, geometry, etc.). In this work, investigation of the growth mechanism of Permalloy thin films on such nano-rippled Si (100) substrates using in situ grazing incidence small angle x-ray scattering measurements (GISAXS) have been done. In situ GISAXS measurements during the deposition of thin films have been carried out at the P03/MiNaXS beam line of PETRA III storage ring of DESY, Hamburg. Nanorippled Si substrates prepared by low energy ion beam sputtering with an average wavelength of 33 nm and 1 nm have been used as templates. It has been found that the film replicates the morphology up to larger thickness regimes and also the growth is highly anisotropic along and normal to the ripple wave vectors. Various growth regimes have been observed. Further, magnetic measurements have been done using magneto-optical Kerr effect by rotating the sample in the azimuthal direction. Strong uniaxial magnetic anisotropy with its easy axis in a direction normal to the ripple wave vector has been observed. The strength of the magnetic anisotropy is found to be decreasing with increasing thin film thickness values. The mechanism of the observed strong uniaxial magnetic anisotropy and its depends on the thickness of the film has been explained by correlating it with the GISAXS results. In conclusion, we have done a detailed growth analysis of Permalloy thin films deposited on nanorippled Si templates and tried to explain the correlation between structure, morphology to the observed magnetic properties.

Keywords: grazing incidence small angle x-ray scattering, magnetic thin films, magnetic anisotropy, nanoripples

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Authors: A. Attaf A., I. Bouhaf Kharkhachi

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Spray ultrasonic deposition technique of tin disulfide (SnS2) thin films know wide application due to their adequate physicochemical properties for microelectronic applications and especially for solar cells. SnS2 film was deposited by spray ultrasonic technique, on pretreated glass substrates at well-determined conditions.The effect of SnS2 concentration on different optical properties of SnS2 Thin films, such us MEB, XRD, and UV spectroscopy visible spectrum was investigated. MEB characterization technique shows that the morphology of this films is uniform, compact and granular. x-ray diffraction study detects the best growth crystallinity in hexagonal structure with preferential plan (001). The results of UV spectroscopy visible spectrum show that films deposited at 0.1 mol/l is large transmittance greater than 25% in the visible region.The band gap energy is 2.54 Ev for molarity 0.1 mol/l.

Keywords: MEB, thin disulfide, thin films, ultrasonic spray, X-Ray diffraction, UV spectroscopy visible

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Authors: Sibani Bisoyi, Ute Zschieschang, Alexander Hoyer, Hagen Klauk

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Abstract— Organic thin-film transistors (TFTs) have great potential to be used for various applications such as flexible displays or sensors. For some of these applications, the TFTs must be able to withstand temperatures in excess of 100 °C, for example to permit the integration with devices or components that require high process temperatures, or to make it possible that the devices can be subjected to the standard sterilization protocols required for biomedical applications. In this work, we have investigated how the thermal stability of low-voltage small-molecule semiconductor dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) TFTs is affected by the encapsulation of the TFTs and by the ambient in which the thermal stress is performed. We also studied to which extent the thermal stability of the TFTs depends on the channel length. Some of the TFTs were encapsulated with a layer of vacuum-deposited Teflon, while others were left without encapsulation, and the thermal stress was performed either in nitrogen or in air. We found that the encapsulation with Teflon has virtually no effect on the thermal stability of our TFTs. In contrast, the ambient in which the thermal stress is conducted was found to have a measurable effect, but in a surprising way: When the thermal stress is carried out in nitrogen, the mobility drops to 70% of its initial value at a temperature of 160 °C and to close to zero at 170 °C, whereas when the stress is performed in air, the mobility remains at 75% of its initial value up to a temperature of 160 °C and at 60% up to 180 °C. To understand this behavior, we studied the effect of the thermal stress on the semiconductor thin-film morphology by scanning electron microscopy. While the DNTT films remain continuous and conducting when the heating is carried out in air, the semiconductor morphology undergoes a dramatic change, including the formation of large, thick crystals of DNTT and a complete loss of percolation, when the heating is conducted in nitrogen. We also found that when the TFTs are heated to a temperature of 200 °C in air, all TFTs with a channel length greater than 50 µm are destroyed, while TFTs with a channel length of less than 50 µm survive, whereas when the TFTs are heated to the same temperature (200 °C) in nitrogen, only the TFTs with a channel smaller than 8 µm survive. This result is also linked to the thermally induced changes in the semiconductor morphology.

Keywords: organic thin-film transistors, encapsulation, thermal stability, thin-film morphology

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Authors: Mao Li, Yuguang Ma, Katsuhiko Ariga

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The performance of functional materials is governed by their ability to interact with surrounding environments in a well-defined and controlled manner. Layer-by-Layer (LbL) assembly is one of the most widely used technologies for coating both planar and particulate substrates in a diverse range of fields, including optics, energy, catalysis, separations, and biomedicine. Herein, we introduce electrochemical-coupling layer-by-layer assembly as a novel fabrication methodology for preparing layered thin films. This assembly method not only determines the process properties (such as the time, scalability, and manual intervention) but also directly control the physicochemical properties of the films (such as the thickness, homogeneity, and inter- and intra-layer film organization), with both sets of properties linked to application-specific performance.

Keywords: layer by layer assembly, electropolymerization, carbazole, optical thin film, electronics

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Authors: Elena A. Outkina, Marina V. Meledina, Aliaksandr A. Khodin

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Nanostructured thin films of SnSₓ, Cu₂ZnSnS₄ (CZTS) semiconductors were fabricated by chemical processing to produce thin-film photoactive layers for photocells as a prospective lowest-cost and environment-friendly alternative to Si, Cu(In, Ga)Se₂, and other traditional solar cells materials. To produce SnSₓ layers, the modified successive ionic layer adsorption and reaction (SILAR) technique were investigated, including successive cyclic dipping into Na₂S solution and SnCl₂, NaCl, triethanolamine solution. To fabricate CZTS layers, the cyclic dipping into CuSO₄ with ZnSO₄, SnCl₂, and Na₂S solutions was used with intermediate rinsing in distilled water. The nano-template aluminum/alumina substrate was used to control deposition processes. Micromorphology and optical characteristics of the fabricated layers have been investigated. Analysis of 2D-like layers deposition features using nano-template substrate is presented, including the effect of nanotips in a template on surface charge redistribution and transport.

Keywords: kesterite, nanotemplate, SILAR, solar cell, tin sulphide

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Authors: Samar Y. Al-Dabagh, Adawiya J. Haider, Mirvat D. Majed

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Pure nanostructure TiO2 and thin films doped with transition metal Fe were prepared by pulsed laser deposition (PLD) on Si (111) substrate. The thin films structures were determined by X-ray diffraction (XRD). The morphology properties were determined from atomic force microscopy (AFM), which shows that the roughness increases when TiO2 is doped with Fe. Results show TiO2 doped with Fe metal thin films deposited on Si (111) substrate has maximum sensitivity to ethanol vapor at 10 mbar oxygen pressure than at 0.01 and 0.1 mbar with optimum operation temperature of 250°C.

Keywords: pulsed laser deposition (PLD), TiO2 doped thin films, nanostructure, gas sensor

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Authors: Bilge Bozdogan, Selda T. Sendogdular, Levent Sendogdular

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We report a technique to control chain conformation during the plasticization process to achieve homogeneous and stable thin films, which allows to reduce post-process annealing times along with enhanced properties like controlled irreversible adsorbed layer (Guiselin brushes) formation. In this study, spin coating temperature was considered as a parameter; hence, all equipment, including the spin coater, substrate, vials, and the solution, was kept inside the same heated fume hood where solution was spin-coated after the temperature was stabilized at a desired value. AFM and SEM results revealed severe difference for solid and air interface between ambient and temperature-controlled samples, which suggest that enthalpic contribution dynamically helps to control film stability in a way where chain entanglements and conformational restrictions are avoided before film growing and allowing to control grafting density through spin coating temperature. The adsorbed layer was also characterized with SEM and Raman-spectroscopy technique right after seeding the adsorbed layer with gold nanoparticles. Stabilized gold nanoparticles and their surface distribution manifest the existence of a controllable polymer brush structure. Acknowledgments: This study was funded by Erciyes University Scientific Research Projects (BAP) Funding(Project ID:10058)

Keywords: chain stability, Guiselin brushes, polymer thin film, spin coating temperature

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Authors: Qiao Pei Wen, Ng Seng Lee, Sae Tae Veera, Chiu Ah Fong, Loke Weng Onn

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Thin film thickness uniformity is crucial to get consistent film etch rate and device yield across the wafer. In the capacitive-coupled parallel plate PECVD system; the film thickness uniformity can be affected by many factors such as the heater temperature uniformity, the spacing between top and bottom electrode, RF power, pressure, gas flows and etc. In this paper, we studied how the PECVD SiN film thickness uniformity is affected by the substrate electrical conductivity and the RF power coupling efficiency. PECVD SiN film was deposited on 150-mm sapphire wafers in 200-mm Lam Sequel tool, fork marks were observed on the wafers. On the fork marks area SiN film thickness is thinner than that on the non-fork area. The forks are the wafer handler inside the process chamber to move the wafers from one station to another. The sapphire wafers and the ceramic forks both are insulator. The high resistivity of the sapphire wafers and the forks inhibits the RF power coupling efficiency during PECVD deposition, thereby reducing the deposition rate. Comparing between the high frequency and low frequency RF power (HFRF and LFRF respectively), the LFRF power coupling effect on the sapphire wafers is more dominant than the HFRF power on the film thickness. This paper demonstrated that the SiN thickness uniformity on sapphire wafers can be improved by depositing a thin TiW layer on the wafer before the SiN deposition. The TiW layer can be on the wafer surface, bottom or any layer before SiN deposition.

Keywords: PECVD SiN deposition, sapphire wafer, substrate electrical conductivity, RF power coupling, high frequency RF power, low frequency RF power, film deposition rate, thickness uniformity

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Authors: Anika Zafiah M. Rus, Nur Munirah Abdullah, M. F. L. Abdullah

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The fabrication and characterization of composite films of graphite- bioepoxy is described. Free-standing thin films of ~0.1 mm thick are prepared using a simple solution mixing with mass proportion of 7/3 (bioepoxy/graphite) and drop casting at room temperature. Fourier transform infra-red spectroscopy (FTIR) and Ultraviolet-visible (UV-vis) spectrophotometer are performed to evaluate the changes in chemical structure and adsorption spectra arising with the increasing of graphite weight loading (wt.%) into the biopolymer matrix. The morphologic study shows a homogeneously dispersed and strong particle bonding between the graphite and the bioepoxy, with conductivity of the film 103 S/m, confirming the efficiency of the processes.

Keywords: absorbance peak, biopolymer, graphite- bioepoxy composites, particle bonding

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Authors: Maidul Islam, Dibakar Roy Chowdhury, Gagan Kumar

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We investigate sensing capabilities of a planar plasmonic THz waveguide. The waveguide is comprised of one dimensional array of periodically arranged sub wavelength scale corrugations in the form of rectangular dimples in order to ensure the plasmonic response. The THz waveguide transmission is observed for polyimide (as thin film) substance filling the dimples. The refractive index of the polyimide film is varied to examine various sensing parameters such as frequency shift, sensitivity and Figure of Merit (FoM) of the fundamental plasmonic resonance supported by the waveguide. In efforts to improve sensing characteristics, we also examine sensing capabilities of a plasmonic waveguide having V shaped corrugations and compare results with that of rectangular dimples. The proposed study could be significant in developing new terahertz sensors with improved sensitivity utilizing the plasmonic waveguides.

Keywords: plasmonics, sensors, sub-wavelength structures, terahertz

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Authors: A. Abbas, X. Tridon, J. Michelon

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In the electronic or in the photovoltaic industries, components are made from wafers which are stacks of thin film layers of a few nanometers to serval micrometers thickness. Early evaluation of the bounding quality between different layers of a wafer is one of the challenges of these industries to avoid dysfunction of their final products. Traditional pump-probe experiments, which have been developed in the 70’s, give a partial solution to this problematic but with a non-negligible drawback. In fact, on one hand, these setups can generate and detect ultra-high ultrasounds frequencies which can be used to evaluate the adhesion quality of wafer layers. But, on the other hand, because of the quiet long acquisition time they need to perform one measurement, these setups remain shut in punctual measurement to evaluate global sample quality. This last point can lead to bad interpretation of the sample quality parameters, especially in the case of inhomogeneous samples. Asynchronous Optical Sampling (ASOPS) systems can perform sample characterization with picosecond acoustics up to 106 times faster than traditional pump-probe setups. This last point allows picosecond ultrasonic to unlock the acoustic imaging field at the nanometric scale to detect inhomogeneities regarding sample mechanical properties. This fact will be illustrated by presenting an image of the measured acoustical reflection coefficients obtained by mapping, with an ASOPS setup, a 255nm thin-film tungsten layer deposited on a silicone substrate. Interpretation of the coefficient reflection in terms of bounding quality adhesion will also be exposed. Origin of zones which exhibit good and bad quality bounding will be discussed.

Keywords: adhesion, picosecond ultrasonics, pump-probe, thin film

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Authors: Hamid Merzouk, Dajhida Talantikite, Amel Tounsi

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Thin films of ZnS have been deposited by chemical route into acidic medium. The deposition time fixed at 5 hours, and the bath temperature varied from 80° C to 95°C with an interval of 5°C. The X-ray diffraction (XRD), UV/ visible spectrophotometry, Fourier Transform Infrared spectroscopy (FTIR) have been used to study the effect of temperature on the structural and optical properties of ZnS thin films. The XRD spectrum of the ZnS layer obtained shows an increase of peaks intensity of ZnS with increasing bath temperature. The study of optical properties exhibit good transmittance (60–80% in the visible region), and the band gap energy of the ZnS thin film decrease from 3.71 eV to 3.64 eV while the refractive index (n) increase with increasing temperature bath. The FTIR analyze confirm our studies and show characteristics bands of vibration of Zn-S.

Keywords: ZnS thin films, XRD spectra, optical gap, XRD

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Authors: Antonio Ruiz Gonzalez, Kwang-Leong Choy

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The measurement of electrolytes has a high value in the clinical routine. Ions are present in all body fluids with variable concentrations and are involved in multiple pathologies such as heart failures and chronic kidney disease. In the case of dissolved potassium, although a high concentration in the blood (hyperkalemia) is relatively uncommon in the general population, it is one of the most frequent acute electrolyte abnormalities. In recent years, the integration of thin films technologies in this field has allowed the development of highly sensitive biosensors with ultra-low limits of detection for the assessment of metals in liquid samples. However, despite the current efforts in the miniaturization of sensitive devices and their integration into portable systems, only a limited number of successful examples used commercially can be found. This fact can be attributed to a high cost involved in their production and the sustained degradation of the electrodes over time, which causes a signal drift in the measurements. Thus, there is an unmet necessity for the development of low-cost and robust sensors for the real-time monitoring of analyte concentrations in patients to allow the early detection and diagnosis of diseases. This paper reports a thin film ion-selective sensor for the evaluation of potassium ions in aqueous samples. As an alternative for this fabrication method, aerosol assisted chemical vapor deposition (AACVD), was applied due to cost-effectivity and fine control over the film deposition. Such a technique does not require vacuum and is suitable for the coating of large surface areas and structures with complex geometries. This approach allowed the fabrication of highly homogeneous surfaces with well-defined microstructures onto 50 nm thin gold layers. The degradative processes of the ubiquitously employed poly (vinyl chloride) membranes in contact with an electrolyte solution were studied, including the polymer leaching process, mechanical desorption of nanoparticles and chemical degradation over time. Rational design of a protective coating based on an organosilicon material in combination with cellulose to improve the long-term stability of the sensors was then carried out, showing an improvement in the performance after 5 weeks. The antifouling properties of such coating were assessed using a cutting-edge quartz microbalance sensor, allowing the quantification of the adsorbed proteins in the nanogram range. A correlation between the microstructural properties of the films with the surface energy and biomolecules adhesion was then found and used to optimize the protective film.

Keywords: hyperkalemia, drift, AACVD, organosilicon

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Authors: Shoroog Alraddadi

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In this study, the effect of gamma irradiation on the structural and transport properties of Bismuth Telluride (Bi₂Te₃) thin films was investigated. Bi₂Te₃ thin films with thicknesses varying from 100 nm to 500 nm were grown using thermal evaporation in vacuum 10⁻⁵ Torr. The films were irradiated by Gamma radiation with different doses (50, 200, and 500 kGy). The crystal structure of Bi₂Te₃ thin films was studied by XRD diffraction. It was showed that the degree of crystallinity of films increases as the doses increase. Furthermore, it was found that the electrical conductivity of Bi₂Te₃ increase as the doses increase. From these results, it can be concluding that the effect of radiation on the structural and transport properties was positive at the levels of irradiation used.

Keywords: bismuth telluride, gamma irradiation, thin film, transport properties

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Authors: Farzan Gity, Lida Ansari, Ian M. Povey, Roger E. Nagle, James C. Greer

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Titanium nitride (TiN) films have been widely used in variety of fields, due to its unique electrical, chemical, physical and mechanical properties, including low electrical resistivity, chemical stability, and high thermal conductivity. In microelectronic devices, thin continuous TiN films are commonly used as diffusion barrier and metal gate material. However, as the film thickness decreases below a few nanometers, electrical properties of the film alter considerably. In this study, the physical and electrical characteristics of 1.5nm to 22nm thin films deposited by Plasma-Enhanced Atomic Layer Deposition (PE-ALD) using Tetrakis(dimethylamino)titanium(IV), (TDMAT) chemistry and Ar/N2 plasma on 80nm SiO2 capped in-situ by 2nm Al2O3 are investigated. ALD technique allows uniformly-thick films at monolayer level in a highly controlled manner. The chemistry incorporates low level of oxygen into the TiN films forming titanium oxynitride (TiON). Thickness of the films is characterized by Transmission Electron Microscopy (TEM) which confirms the uniformity of the films. Surface morphology of the films is investigated by Atomic Force Microscopy (AFM) indicating sub-nanometer surface roughness. Hall measurements are performed to determine the parameters such as carrier mobility, type and concentration, as well as resistivity. The >5nm-thick films exhibit metallic behavior; however, we have observed that thin film resistivity is modulated significantly by film thickness such that there are more than 5 orders of magnitude increment in the sheet resistance at room temperature when comparing 5nm and 1.5nm films. Scattering effects at interfaces and grain boundaries could play a role in thickness-dependent resistivity in addition to quantum confinement effect that could occur at ultra-thin films: based on our measurements the carrier concentration is decreased from 1.5E22 1/cm3 to 5.5E17 1/cm3, while the mobility is increased from < 0.1 cm2/V.s to ~4 cm2/V.s for the 5nm and 1.5nm films, respectively. Also, measurements at different temperatures indicate that the resistivity is relatively constant for the 5nm film, while for the 1.5nm film more than 2 orders of magnitude reduction has been observed over the range of 220K to 400K. The activation energy of the 2.5nm and 1.5nm films is 30meV and 125meV, respectively, indicating that the TiON ultra-thin films are exhibiting semiconducting behaviour attributing this effect to a metal-semiconductor transition. By the same token, the contact is no longer Ohmic for the thinnest film (i.e., 1.5nm-thick film); hence, a modified lift-off process was developed to selectively deposit thicker films allowing us to perform electrical measurements with low contact resistance on the raised contact regions. Our atomic scale simulations based on molecular dynamic-generated amorphous TiON structures with low oxygen content confirm our experimental observations indicating highly n-type thin films.

Keywords: activation energy, ALD, metal-semiconductor transition, resistivity, titanium oxynitride, ultra-thin film

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Authors: Arabi Nour El Houda, Iratni Aicha, Talaighil Razika, Bruno Capoen, Mohamed Bouazaoui

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TiO2 thin films have been prepared by the sol-gel dip-coating technique in order to elaborate antireflective thin films for monocrystalline silicon (mono-Si). The titanium isopropoxyde was chosen as a precursor with hydrochloric acid as a catalyser for preparing a stable solution. The optical properties have been tailored with varying the solution concentration, the withdrawn speed, and the heat-treatment. We showed that using a TiO2 single layer with 64.5 nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si reflection at a level lower than 3% over the broadband spectral do mains [669-834] nm and [786-1006] nm respectively. Those latter performances are similar to the ones obtained with double layers of low and high refractive index glasses respectively.

Keywords: thin film, dip-coating, mono-crystalline silicon, titanium oxide

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Authors: Suboohi Shervani, Jingjing Ling, Jiabin Liu, Tahir Husain

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Offshore oil-spill has become the most emerging problem in the world. In the current paper, a graphene/ZnO/polymer nanocomposite thin film is coated on stainless steel mesh via layer by layer deposition method. The structural characterization of materials is determined by Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The total petroleum hydrocarbons (TPHs) and separation efficiency have been measured via gas chromatography – flame ionization detector (GC-FID). TPHs are reduced to 2 ppm and separation efficiency of the nanocomposite coated mesh is reached ≥ 99% for the final sample. The nanocomposite coated mesh acts as a promising candidate for the separation of oil- water mixture.

Keywords: oil spill, graphene, oil-water separation, nanocomposite

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Authors: Jung-Ho Moon, Myung-Gon Yoon, Tae Kwon Ha

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This paper presents a wireless sensor network protocol for a car parking monitoring system. A wireless sensor network for the purpose is composed of multiple sensor nodes, a sink node, a gateway, and a server. Each of the sensor nodes is equipped with a 3-axis AMR sensor and deployed in the center of a parking space. The sensor node reads its sensor values periodically and transmits the data to the sink node if the current and immediate past sensor values show a difference exceeding a threshold value. The operations of the sink and sensor nodes are described in detail along with flow diagrams. The protocol allows a low-duty cycle operation of the sensor nodes and a flexible adjustment of the threshold value used by the sensor nodes.

Keywords: car parking monitoring, sensor node, wireless sensor network, network protocol

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Authors: S. Abdullahi, M. Momoh, K. U. Isah

Abstract:

Zinc oxide (ZnO) thin films of 75.5 nm and 130.5 nm were deposited at room temperature onto chemically and ultrasonically cleaned corning glass substrate by radio frequency technique and annealed at 150°C under nitrogen atmosphere for 60 minutes. The optical properties of the films were ascertained by UV-VIS-NIR spectrophotometry. Influence of the thickness of the films on the optical properties was studied keeping other deposition parameters constant. The optical transmittance spectra reveal a maximum transmittance of 81.49% and 84.26% respectively. The band gap of the films is found to be direct allowed transition and decreases with the increase in thickness of the films. The band gap energy (Eg) is in the range of 3.28 eV to 3.31 eV, respectively. These thin films are suitable for solar cell applications.

Keywords: optical constants, RF sputtering, Urbach energy, zinc oxide thin film

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Authors: Y. M. Aiyesimi, G. T. Okedayo, O. W. Lawal

Abstract:

An investigation is made for unsteady MHD thin film flow of a third grade fluid down an inclined plane with slip boundary condition. The non-linear partial differential equation governing the flow and heat transfer are evaluated numerically using computer software called Maple to obtain velocity and temperature profile. The effect of slip and other various physical parameter on both velocity and temperature profile obtained are studied through several graphs.

Keywords: non-Newtonian fluid, MHD flow, third-grade fluid, Maple, slip boundary condition, heat transfer

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Authors: Yilei Xue, Yat-Hing Ham, Wenting Qiu, Wan Chan, Stefan Nagl

Abstract:

Polydopamine (PDA) is a popular material in biological and medical applications due to its excellent biocompatibility, outstanding physicochemical properties, and facile fabrication. In this project, a new sandwich-structured PDA and silver (Ag) hybrid material named PDA-Ag-PDA was synthesized and characterized layer-by-layer, where silver nanoparticles (Ag NPs) are wrapped in PDA coatings, using SEM, AFM, 3D surface metrology, and contact angle meter. The silver loading capacity is positively proportional to the roughness value of the initial PDA film. This designed film was subsequently integrated within a digital microfluidic (DMF) platform coupling with an oxygen sensor layer for on-chip antibacterial assay. The concentration of E. coli was quantified on DMF by real-time monitoring oxygen consumption during E. coli growth with the optical oxygen sensor layer. The PDA-Ag-PDA coating shows an 99.9% reduction in E. coli population under non-nutritive condition with 1-hour treatment and has a strong growth inhibition of E. coliin nutrient LB broth as well. Furthermore, PDA-Ag-PDA film maintaining a low cytotoxicity effect to human cells. After treating with PDA-Ag-PDA film for 24 hours, 82% HEK 293 and 86% HeLa cells were viable. The SERS enhancement factor of PDA-Ag-PDA is estimated to be 1.9 × 104 using Rhodamine 6G (R6G). Multifunctional PDA-Ag-PDA coating provides an alternative platform to conjugate biomolecules and perform biological applications on DMF, in particular, for the adhesive protein and cell study.

Keywords: polydopamine, silver nanoparticles, digital microfluidic, optical sensor, antimicrobial assay, SERS

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Authors: Issam Lakdhar, Akram Alhussein, Juan Creus

Abstract:

With the huge increase in world energy consumption, researchers are working to find other alternative sources of energy instead of fossil fuel one causing many environmental problems as the production of greenhouse effect gases. Hydrogen is considered a green energy source, which its combustion does not cause environmental pollution. The transport and the storage of the gas molecules or the other products containing this smallest chemical element in metallic structures (pipelines, tanks) are crucial issues. The dissolve and the permeation of hydrogen into the metal lattice lead to the formation of hydride phases and the embrittlement of structures. To protect the metallic structures, a surface treatment could be a good solution. Among the different techniques, magnetron sputtering is used to elaborate micrometric coatings capable of slowing down or stop hydrogen permeation. In the plasma environment, the deposition parameters of new thin-film metallic glasses Al-Ti-W were optimized and controlled in order to obtain, hydrogen barrier. Many characterizations were carried out (SEM, XRD and Nano-indentation…) to control the composition and understand the influence of film microstructure and chemical composition on the hydrogen permeation through the coatings. The coating performance was evaluated under two hydrogen production methods: chemical and electrochemical (cathodic protection) techniques. The hydrogen quantity absorbed was experimentally determined using the Thermal-Desorption Spectroscopy method (TDS)). An ideal ATW thin film was developed and showed excellent behavior against the diffusion of hydrogen.

Keywords: thin films, hydrogen, PVD, plasma technology, electrochemical properties

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Authors: Satyendra Mourya, Jyoti Jaiswal, Gaurav Malik, Brijesh Kumar, Ramesh Chandra

Abstract:

Present work describes the fabrication and sensing characteristics of the Pd-Pt decorated nanostructured silicon carbide (SiC) thin films on anodized porous silicon (PSi) substrate by RF magnetron sputtering. The gas sensing performance of Pd-Pt/SiC/PSi sensing electrode towards H2 gas under low (10–400 ppm) detection limit and high operating temperature regime (25–600 °C) were studied in detail. The chemiresistive sensor exhibited high selectivity, good sensing response, fast response/recovery time with excellent stability towards H2 at high temperature. The selectivity measurement of the sensing electrode was done towards different oxidizing and reducing gases and proposed sensing mechanism discussed in detail. Therefore, the investigated Pd-Pt/SiC/PSi structure may be a highly sensitive and selective hydrogen gas sensing electrode for deployment in extreme environment applications.

Keywords: RF Sputtering, silicon carbide, porous silicon, hydrogen gas sensor

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Authors: Bhrigu Rishi Mishra, Sreerag Sundaram, Nithin Jo Varghese, Karthik Sasihithlu

Abstract:

We have designed a TiO2/PDMS coating with 94% solar reflection, 96% IR emission, and 81.8 W/m2 cooling power for passive daytime radiative cooling using Kubelka Munk theory and CST microwave studio. To reduce solar absorption loss in 0.3-0.39 m wavelength region, a TiO2 thin film on top of the coating is used. Simulation using Ansys Lumerical shows that for a 20 m thick TiO2/PDMS coating, a TiO2 thin film of 84 nm increases the coating's reflectivity by 11% in the solar region.

Keywords: passive daytime radiative cooling, disordered metamaterial, Kudelka Munk theory, solar reflectivity

Procedia PDF Downloads 99