Search results for: silicon germanium anode
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 750

Search results for: silicon germanium anode

690 Crystalline Silicon Optical Whispering Gallery Mode (WGM) Resonators for Precision Measurements

Authors: Igor Bilenko, Artem Shitikov, Michael Gorodetsky

Abstract:

Optical whispering gallery mode (WGM) resonators combine very high optical quality factor (Q) with small size. Resonators made from low loss crystalline fluorites (CaF2, MgF2) may have Q as high as 1010 that make them unique devices for modern applications including ultrasensitive sensors, frequency control, and precision spectroscopy. While silicon is a promising material transparent from near infrared to terahertz frequencies, fundamental limit for Si WGM quality factor was not reached yet. In our paper, we presented experimental results on the preparation and testing of resonators at 1550 nm wavelength made from crystalline silicon grown and treated by different techniques. Q as high as 3x107 was demonstrated. Future steps need to reach a higher value and possible applications are discussed.

Keywords: optical quality factor, silicon optical losses, silicon optical resonator, whispering gallery modes

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689 Synthesis of SnO Novel Cabbage Nanostructure and Its Electrochemical Property as an Anode Material for Lithium Ion Battery

Authors: Yongkui Cui, Fengping Wang, Hailei Zhao, Muhammad Zubair Iqbal, Ziya Wang, Yan Li, Pengpeng LV

Abstract:

The novel 3D SnO cabbages self-assembled by nanosheets were successfully synthesized via template-free hydrothermal growth method under facile conditions.The XRD results manifest that the as-prepared SnO is tetragonal phase. The TEM and HRTEM results show that the cabbage nanosheets are polycrystalline structure consisted of considerable single-crystalline nanoparticles. Two typical Raman modes A1g=210 and Eg=112 cm-1 of SnO are observed by Raman spectroscopy. Moreover, galvanostatic cycling tests has been performed using the SnO cabbages as anode material of lithium ion battery and the electrochemical results suggest that the synthesized SnO cabbage structures are a promising anode material for lithium ion batteries.

Keywords: electrochemical property, hydrothermal synthesis, lithium ion battery, stannous oxide

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688 Effect of Silicon Sulphate and Silicic Acid Rates on Growth, Yield and Nutritional Status of Wheat (Triticum aestivum L.)

Authors: R. G. Shemi, M. A. Abo Horish, Kh. M. A. Mekled

Abstract:

The utilization of silicon (Si) sources is a crucial agricultural tool that requires optimization to promote sustainable practices. The application of Si provides the implementation of biological mechanisms of plant nutrition, growth promotion, and protection. The aims of this experiment were to investigate the relative efficacy of Si sources and levels on the growth, yield, and mineral content of wheat. The study examined the effects of silicon sulphate and silicic acid levels on growth, spike characteristics, yield parameters, and macro- and micronutrient concentrations of wheat during the 2-season. The entire above-indicated parameters were significantly (p < 0.05) increased with increasing levels of silicon sulphate and silicic acid compared to the control. Foliar application of silicon sulphate 150 ppm and silicic acid 60 ppm statistically (p < 0.05) enhanced grain N concentration and the grain yield by 136.14 and 77.85%, 43.49 and 34.52% in the 1st season, and by 78.62 and 54.40%, 43.53 and 33.18% in the 2nd season, respectively, as compared with control. Overall, foliar applications of silicon sulphate at 150 ppm and silicic acid at 60 ppm were greatly efficient amongst all Si levels and sources in improving growth and spike characters, increasing yield parameters, and elevating grain nutrients. Finally, the treatment of silicon sulfate at 150 ppm was more effective than the treatment of silicic acid at 60 ppm in increasing growth, grain nutrients, and productivity of wheat and attaining agricultural sustainability under experiment conditions.

Keywords: wheat, silicon sulphate, silicic acid, grain nutrients

Procedia PDF Downloads 18
687 Silicon Surface Treatment Effect on the Structural, Optical, and Optoelectronic Properties for Solar Cell Applications

Authors: Lotfi Hedi Khezami, Mohamed Ben Rabha, N. Sboui, Mounir Gaidi, B. Bessais

Abstract:

Metal-nano particle-assisted Chemical Etching is an extraordinary developed wet etching method of producing uniform semiconductor nano structure (nano wires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and opto electronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and opto electronic properties are presented in this paper.

Keywords: stain etching, porous silicon, silicon nanowires, reflectivity, lifetime, solar cells

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686 Optimize Study and Optical Characterization of Bilayer Structures from Silicon Nitride

Authors: Beddiaf Abdelaziz

Abstract:

The optical characteristics of thin films of silicon oxynitride SiOₓNy prepared by the Low-Pressure Chemical Vapor Deposition (LPCVD) technique have been studied. The films are elaborated from the SiH₂Cl₂, N₂O and NH₃ gaseous mixtures. The flows of SiH₂Cl₂ and (N₂O+NH₃) are 200 sccm and 160 sccm respectively. The deposited films have been characterized by ellipsometry, to model our silicon oxynitride SiOₓNy films. We have suggested two theoretical models (Maxwell Garnett and Bruggeman effective medium approximation (BEMA)). These models have been applied on silicon oxynitride considering the material as a heterogeneous medium formed by silicon oxide and silicon nitride. The model's validation was justified by the confrontation of theoretical spectra and those measured by ellipsometry. This result permits us to obtain the optical refractive coefficient of these films and their thickness. Ellipsometry analysis of the optical properties of the SiOₓNy films shows that the SiO₂ fraction decreases when the gaseous ratio NH₃/N₂O increases. Whereas the increase of this ratio leads to an increase of the silicon nitride Si3N4 fraction. The study also shows that the increasing gaseous ratio leads to a strong incorporation of nitrogen atoms in films. Also, the increasing of the SiOₓNy refractive coefficient until the SiO₂ value shows that this insulating material has good dielectric quality.

Keywords: ellipsometry, silicon oxynitrde, model, refractive coefficient, effective medium

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685 Study of Fast Etching of Silicon for the Fabrication of Bulk Micromachined MEMS Structures

Authors: V. Swarnalatha, A. V. Narasimha Rao, P. Pal

Abstract:

The present research reports the investigation of fast etching of silicon for the fabrication of microelectromechanical systems (MEMS) structures using silicon wet bulk micromachining. Low concentration tetramethyl-ammonium hydroxide (TMAH) and hydroxylamine (NH2OH) are used as main etchant and additive, respectively. The concentration of NH2OH is varied to optimize the composition to achieve best etching characteristics such as high etch rate, significantly high undercutting at convex corner for the fast release of the microstructures from the substrate, and improved etched surface morphology. These etching characteristics are studied on Si{100} and Si{110} wafers as they are most widely used in the fabrication of MEMS structures as wells diode, transistors and integrated circuits.

Keywords: KOH, MEMS, micromachining, silicon, TMAH, wet anisotropic etching

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684 Electrical Performance Analysis of Single Junction Amorphous Silicon Solar (a-Si:H) Modules Using IV Tracer (PVPM)

Authors: Gilbert Omorodion Osayemwenre, Edson Meyer, R. T. Taziwa

Abstract:

The electrical analysis of single junction amorphous silicon solar modules is carried out using outdoor monitoring technique. Like crystalline silicon PV modules, the electrical characterisation and performance of single junction amorphous silicon modules are best described by its current-voltage (IV) characteristic. However, IV curve has a direct dependence on the type of PV technology and material properties used. The analysis reveals discrepancies in the modules performance parameter even though they are of similar technology. The aim of this work is to compare the electrical performance output of each module, using electrical parameters with the aid of PVPM 100040C IV tracer. These results demonstrated the relevance of standardising the performance parameter for effective degradation analysis of a-Si:H.

Keywords: PVPM 100040C IV tracer, SolarWatt part, single junction amorphous silicon module (a-Si:H), Staebler-Wronski (S-W) degradation effect

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683 Improving Cyclability and Capacity of Lithium Oxygen Batteries via Low Rate Pre-Activation

Authors: Zhihong Luo, Guangbin Zhu, Lulu Guo, Zhujun Lyu, Kun Luo

Abstract:

Cycling life has become the threshold for the prospective application of Li-O₂ batteries, and the protection of Li anode has recently regarded as the key factor to the performance. Herein, a simple low rate pre-activation (20 cycles at 0.5 Ag⁻¹ and a capacity of 200 mAh g⁻¹) was employed to effectively improve the performance and cyclability of Li-O₂ batteries. The charge/discharge cycles at 1 A g⁻¹ with a capacity of 1000 mAh g⁻¹ were maintained for up to 290 times versus 55 times for the cell without pre-activation. The ultimate battery capacity and high rate discharge property were also largely enhanced. Morphology, XRD and XPS analyses reveal that the performance improvement is in close association with the formation of the smooth and compact surface layer formed on the Li anode after low rate pre-activation, which apparently alleviated the corrosion of Li anode and the passivation of cathode during battery cycling, and the corresponding mechanism was also discussed.

Keywords: lithium oxygen battery, pre-activation, cyclability, capacity

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682 Bacteria Removal from Wastewater by Electrocoagulation Process

Authors: Boudjema Nouara, Mameri Nabil

Abstract:

Bacteria have played an important role in water contamination as a consequence of organic pollution. In this study, an electrocoagulation process was adopted to remove fecal contamination and pathogenic bacteria from waste water. The effect of anode/cathodes materials as well as operating conditions for bacteria removal from water, such as current intensity and initial pH and temperature. The results indicated that the complete removal was achevied when using aluminium anode as anode at current intensity of 3A, initial pH of 7-8 and electrolysis time of 30 minutes. This process showed a bactericidal effect of 95 to 99% for the total and fecal coliforms and 99% to 100% for Eschercichia coli and fecal Streptococci. A decrease of 72% was recorded for sulphite-reducing Clostridia. Thus, this process has the potential to be one the options for treatment where high amount of bacteria in wastewater river.

Keywords: bacteria, el Harrach river, electrocoagulation, wastewater, treatment

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681 Modeling and Analysis the Effects of Temperature and Pressure on the Gas-Crossover in Polymer Electrolyte Membrane Electrolyzer

Authors: Abdul Hadi Bin Abdol Rahim, Alhassan Salami Tijani

Abstract:

Hydrogen produced by means of polymer electrolyte membrane electrolyzer (PEME) is one of the most promising methods due to clean and renewable energy source. In the process, some energy loss due to mass transfer through a PEM is caused by diffusion, electro-osmotic drag, and the pressure difference between the cathode channel and anode channel. In PEME water molecules and ionic particles transferred between the electrodes from anode to cathode, Extensive mixing of the hydrogen and oxygen at anode channel due to gases cross-over must be avoided. In recent times the consciousness of safety issue in high pressure PEME where the oxygen mix with hydrogen at anode channel could create, explosive conditions have generated a lot of concern. In this paper, the steady state and simulation analysis of gases crossover in PEME on the temperature and pressure effect are presented. The simulations have been analysis in MATLAB based on the well-known Fick’s Law of molecular diffusion. The simulation results indicated that as temperature increases, there is a significant decrease in operating voltage.

Keywords: diffusion, gases crosover, steady state, Fick’s law

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680 Crops Cold Stress Alleviation by Silicon: Application on Turfgrass

Authors: Taoufik Bettaieb, Sihem Soufi

Abstract:

As a bioactive metalloid, silicon (Si) is an essential element for plant growth and development. It also plays a crucial role in enhancing plants’ resilience to different abiotic and biotic stresses. The morpho-physiological, biochemical, and molecular background of Si-mediated stress tolerance in plants were unraveled. Cold stress is a severe abiotic stress response to the decrease of plant growth and yield by affecting various physiological activities in plants. Several approaches have been used to alleviate the adverse effects generated from cold stress exposure, but the cost-effective, environmentally friendly, and defensible approach is the supply of silicon. Silicon has the ability to neutralize the harmful impacts of cold stress. Therefore, based on these hypotheses, this study was designed in order to investigate the morphological and physiological background of silicon effects applied at different concentrations on cold stress mitigation during early growth of a turfgrass, namely Paspalum vaginatum Sw. Results show that silicon applied at different concentrations improved the morphological development of Paspalum subjected to cold stress. It is also effective on the photosynthetic apparatus by maintaining stability the photochemical efficiency. As the primary component of cellular membranes, lipids play a critical function in maintaining the structural integrity of plant cells. Silicon application decreased membrane lipid peroxidation and kept on membrane frontline barrier relatively stable under cold stress.

Keywords: crops, cold stress, silicon, abiotic stress

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679 Hard Carbon Derived From Dextrose as High-Performance Anode Material for Sodium-Ion Batteries

Authors: Rupan Das Chakraborty, Surendra K. Martha

Abstract:

Hard carbons (HCs) are extensively used as anode materials for sodium-ion batteries due to their availability, low cost, and ease of synthesis. It possesses the ability to store Na ion between stacked sp2 carbon layers and micropores. In this work, hard carbons are synthesized from different concentrations (0.5M to 5M) of dextrose solutions by hydrothermal synthesis followed by high-temperature calcination at 1100 ⁰C in an inert atmosphere. Dextrose has been chosen as a precursor material as it is a eco-friendly and renewable source. Among all hard carbon derived from different concentrations of dextrose solutions, hard carbon derived from 3M dextrose solution delivers superior electrochemical performance compared to other hard carbons. Hard carbon derived from 3M dextrose solution (Dextrose derived Hard Carbon-3M) provides an initial reversible capacity of 257 mAh g-1 with a capacity retention of 83 % at the end of 100 cycles at 30 mA g-1). The carbons obtained from different dextrose concentration show very similar Cyclic Voltammetry and chargedischarging behavior at a scan rate of 0.05 mV s-1 the Cyclic Voltammetry curve indicate that solvent reduction and the solid electrolyte interface (SEI) formation start at E < 1.2 V (vs Na/Na+). Among all 3M dextrose derived electrode indicate as a promising anode material for Sodium-ion batteries (SIBs).

Keywords: dextrose derived hard carbon, anode, sodium-ion battery, electrochemical performance

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678 Reduction in Hot Metal Silicon through Statistical Analysis at G-Blast Furnace, Tata Steel Jamshedpur

Authors: Shoumodip Roy, Ankit Singhania, Santanu Mallick, Abhiram Jha, M. K. Agarwal, R. V. Ramna, Uttam Singh

Abstract:

The quality of hot metal at any blast furnace is judged by the silicon content in it. Lower hot metal silicon not only enhances process efficiency at steel melting shops but also reduces hot metal costs. The Hot metal produced at G-Blast furnace Tata Steel Jamshedpur has a significantly higher Si content than Benchmark Blast furnaces. The higher content of hot metal Si is mainly due to inferior raw material quality than those used in benchmark blast furnaces. With minimum control over raw material quality, the only option left to control hot metal Si is via optimizing the furnace parameters. Therefore, in order to identify the levers to reduce hot metal Si, Data mining was carried out, and multiple regression models were developed. The statistical analysis revealed that Slag B3{(CaO+MgO)/SiO2}, Slag Alumina and Hot metal temperature are key controllable parameters affecting hot metal silicon. Contour Plots were used to determine the optimum range of levels identified through statistical analysis. A trial plan was formulated to operate relevant parameters, at G blast furnace, in the identified range to reduce hot metal silicon. This paper details out the process followed and subsequent reduction in hot metal silicon by 15% at G blast furnace.

Keywords: blast furnace, optimization, silicon, statistical tools

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677 Antireflection Performance of Graphene Directly Deposited on Silicon Substrate by the Atmospheric Pressure Chemical Vapor Deposition Method

Authors: Samira Naghdi, Kyong Yop Rhee

Abstract:

Transfer-free synthesis of graphene on dielectric substrates is highly desirable but remains challenging. Here, by using a thin sacrificial platinum layer as a catalyst, graphene was deposited on a silicon substrate through a simple and transfer-free synthesis method. During graphene growth, the platinum layer evaporated, resulting in direct deposition of graphene on the silicon substrate. In this work, different growth conditions of graphene were optimized. Raman spectra of the produced graphene indicated that the obtained graphene was bilayer. The sheet resistance obtained from four-point probe measurements demonstrated that the deposited graphene had high conductivity. Reflectance spectroscopy of graphene-coated silicon showed a decrease in reflectance across the wavelength range of 200-800 nm, indicating that the graphene coating on the silicon surface had antireflection capabilities.

Keywords: antireflection coating, chemical vapor deposition, graphene, the sheet resistance

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676 Silicon Nanostructure Based on Metal-Nanoparticle-Assisted Chemical Etching for Photovoltaic Application

Authors: B. Bouktif, M. Gaidi, M. Benrabha

Abstract:

Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper.

Keywords: semiconductor nanostructure, chemical etching, optoelectronic property, silicon surface

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675 Vertically Coupled III-V/Silicon Single Mode Laser with a Hybrid Grating Structure

Authors: Zekun Lin, Xun Li

Abstract:

Silicon photonics has gained much interest and extensive research for a promising aspect for fabricating compact, high-speed and low-cost photonic devices compatible with complementary metal-oxide-semiconductor (CMOS) process. Despite the remarkable progress made on the development of silicon photonics, high-performance, cost-effective, and reliable silicon laser sources are still missing. In this work, we present a 1550 nm III-V/silicon laser design with stable single-mode lasing property and robust and high-efficiency vertical coupling. The InP cavity consists of two uniform Bragg grating sections at sides for mode selection and feedback, as well as a central second-order grating for surface emission. A grating coupler is etched on the SOI waveguide by which the light coupling between the parallel III-V and SOI is reached vertically rather than by evanescent wave coupling. Laser characteristic is simulated and optimized by the traveling-wave model (TWM) and a Green’s function analysis as well as a 2D finite difference time domain (FDTD) method for the coupling process. The simulation results show that single-mode lasing with SMSR better than 48dB is achievable, and the threshold current is less than 15mA with a slope efficiency of around 0.13W/A. The coupling efficiency is larger than 42% and possesses a high tolerance with less than 10% reduction for 10 um horizontal or 15 um vertical dislocation. The design can be realized by standard flip-chip bonding techniques without co-fabrication of III-V and silicon or precise alignment.

Keywords: III-V/silicon integration, silicon photonics, single mode laser, vertical coupling

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674 Fabrication and Properties of Al2O3/Si Quantum Well-Structured Silicon Solar Cells

Authors: Kwang-Ho Kim, Kwan-Hong Min, Pyungwoo Jang, Chisup Jung, Kyu Seomoon

Abstract:

By restricting the dimensions of silicon to less than Bohr radius of bulk crystalline silicon (∼5 nm), quantum confinement causes its effective bandgap to increase. Therefore, silicon quantum wells (QWs) using these quantum phenomena could be a good candidate to achieve high performance silicon solar cells. The Al2O3/Si QW structures were fabricated by using the successive deposition technique, as a quantum confinement device to increase the effective energy bandgap and passivation effect in Si surface for the 3rd generation solar cell applications. In Si/Al2O3 QWs, the thicknesses of Si layers and Al2O3 layers were varied between 1 to 5 nm, respectively. The roughness of deposited Si on Al2O3 was less than 4 Å in the thickness of 2 nm. By using the Al2O3/Si QW structures on Si surfaces, the lifetime measured by u-PCD technique increased as a result of passivated surface effects. The discussion about the other properties such as electrical and optical properties of the QWs structures as well as the fabricated solar cells will be presented in this paper.

Keywords: Al2O3/Si quantum well, quantum confinement, solar cells, third generation, successive deposition technique

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673 Cu3SbS3 as Anode Material for Sodium Batteries

Authors: Atef Y. Shenouda, Fei Xu

Abstract:

Cu₃SbS₃ (CAS) was synthesized by direct solid-state reaction from elementary Cu, Sb, & S and hydrothermal reaction using thioacetamide (TAM). Crystal structure and morphology for the prepared phases of Cu₃SbS₃ were studied via X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The band gap energies are 2 and 2.2 eV for the prepared samples. The two samples are as anode for Na ion storage. They show high initial capacity to 490 mAh/g. Na cell prepared from TAM sample shows 280 mAh/g after 25 cycles vs. 60 mAh/g for elemental sample.

Keywords: Cu3SbS3, sodium batteries, thioacetamide, sulphur sources

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672 Deep Well-Grounded Magnetite Anode Chains Retrieval and Installation for Raslanuf Complex Impressed Current Cathodic Protection System Rectification

Authors: Mohamed Ahmed Khalil

Abstract:

The number of deep well anode ground beds (GBs) have been retrieved due to unoperated anode chains. New identical magnetite anode chains (MAC) have been installed at Raslanuf complex impressed current Cathodic protection (ICCP) system, distributed at different plants (Utility, ethylene and polyethylene). All problems associated with retrieving and installation of MACs have been discussed, rectified and presented. All GB-associated severely corroded wellhead casings were well maintained and/or replaced by new fabricated and modified ones. The main cause of the wellhead casing's severe internal corrosion was discussed and the conducted remedy action to overcome future corrosion problems is presented. All GB-connected anode junction boxes (AJBs) and shunts were closely inspected, maintained and necessary replacement and/or modifications were carried out on shunts. All damaged GB concrete foundations (CF) have been inspected and completely replaced. All GB-associated Transformer-Rectifiers Units (TRU) were subjected to thorough inspection and necessary maintenance was performed on each individual TRU. After completion of all MACs and TRU maintenance activities, each cathodic protection station (CPS) has been re-operated, alternative current (AC), direct current (DC), voltage and structure to soil potential (S/P) measurements have been conducted, recorded and all obtained test results are presented. DC current outputs have been adjusted and DC current outputs of each MAC have been recorded for each GB AJB.

Keywords: magnetite anodes, deep well, ground beds, cathodic protection, transformer rectifier, impressed current, junction boxes

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671 Electrocoagulation of Ni(OH)2/NiOOH for the Removal of Boron Using Nickel Foam as Sacrificial Anode

Authors: Yu-Jen Shih, Yao-Hui Hunag

Abstract:

Electrocoagulation (EC) using metallic nickel foam as anode and cathode for the removal of boron from solution was studied. The electrolytic parameters included pH, current density, and initial boron concentration for optimizing the EC process. Experimental results showed that removal efficiency was increased by elevating pH from 4.0 to 8.0, and then decreased at higher pH. The electrolytic efficacy was not affected by current density. In respect of energy consumption, 1.25 mA/cm2 of current density was acceptable for an effective EC of boron, while increasing boric acid from 10 to 100 ppm-B did not impair removal efficiency too much. Cyclic voltammetry indicated that the oxide film, Ni(OH)2 and NiOOH, at specific overpotentials would result in less weight loss of anode than that predicted by the Faraday’s law. The optimal conditions under which 99.2% of boron was removed and less than 1 ppm-B remained in the electrolyte would be pH 8, four pairs of electrodes, and 1.25 mA/cm2 in 120 min as treating wastewaters containing 10 ppm-B. XRD and SEM characterization suggested that the granular crystallites of hydroxide precipitates was composed of theophrastite.

Keywords: borohydrides, hydrogen generation, NiOOH, electrocoagulation, cyclic voltammetry, boron removal

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670 Highly Sensitive and Selective H2 Gas Sensor Based on Pd-Pt Decorated Nanostructured Silicon Carbide Thin Films for Extreme Environment Application

Authors: Satyendra Mourya, Jyoti Jaiswal, Gaurav Malik, Brijesh Kumar, Ramesh Chandra

Abstract:

Present work describes the fabrication and sensing characteristics of the Pd-Pt decorated nanostructured silicon carbide (SiC) thin films on anodized porous silicon (PSi) substrate by RF magnetron sputtering. The gas sensing performance of Pd-Pt/SiC/PSi sensing electrode towards H2 gas under low (10–400 ppm) detection limit and high operating temperature regime (25–600 °C) were studied in detail. The chemiresistive sensor exhibited high selectivity, good sensing response, fast response/recovery time with excellent stability towards H2 at high temperature. The selectivity measurement of the sensing electrode was done towards different oxidizing and reducing gases and proposed sensing mechanism discussed in detail. Therefore, the investigated Pd-Pt/SiC/PSi structure may be a highly sensitive and selective hydrogen gas sensing electrode for deployment in extreme environment applications.

Keywords: RF Sputtering, silicon carbide, porous silicon, hydrogen gas sensor

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669 Rapid Generation of Octagonal Pyramids on Silicon Wafer for Photovoltaics by Swift Anisotropic Chemical Etching Process

Authors: Sami Iqbal, Azam Hussain, Weiping Wu, Guo Xinli, Tong Zhang

Abstract:

A novel octagonal upright micro-pyramid structure was generated by wet chemical anisotropic etching on a monocrystalline silicon wafer (100). The primary objectives are to reduce front surface reflectance of silicon wafers, improve wettability, enhance surface morphology, and maximize the area coverage by generated octagonal pyramids. Under rigorous control and observation, the etching process' response time was maintained precisely. The experimental outcomes show a significant decrease in the optical surface reflectance of silicon wafers, with the lowest reflectance of 8.98%, as well as enhanced surface structure, periodicity, and surface area coverage of more than 85%. The octagonal silicon pyramid was formed with a high etch rate of 0.41 um/min and a much shorter reaction time with the addition of hydrofluoric acid coupled with magnetic stirring (mechanical agitation) at 300 rpm.

Keywords: octagonal pyramids, rapid etching, solar cells, surface engineering, surface reflectance

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668 Investigating the Influence of Potassium Ion Doping on Lithium-Ion Battery Performance

Authors: Liyew Yizengaw Yitayih

Abstract:

This nanotechnology study focuses on how potassium ions (K+) affect lithium-ion (Li-ion) battery performance. By adding potassium ions (K+) to the lithium tin oxide (LiSnO) anode and employing styrene-butadiene rubber (SBR) as a binder, the doping of K+ was specifically studied. The methods employed in this study include computer modeling and simulation, material fabrication, and electrochemical characterization. The potassium ions (Li+) were successfully doped into the LiSnO lattice during charge/discharge cycles, which increased the lithium-ion diffusivity and electrical conductivity within the anode. However, it was found that internal doping of potassium ions (K+) into the LiSnO lattice occurred at high potassium ion concentrations (>16.6%), which hampered lithium ion transfer because of repulsion and physical blockage. The electrochemical efficiency of lithium-ion batteries was improved by this comprehensive study's presentation of potassium ions' (K+) potential advantages when present in the appropriate concentrations in electrode materials.

Keywords: lithium-ion battery, LiSnO anode, potassium doping, lithium-ion diffusivity, electronic conductivity

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667 Preparation and Conductivity Measurements of LSM/YSZ Composite Solid Oxide Electrolysis Cell Anode Materials

Authors: Christian C. Vaso, Rinlee Butch M. Cervera

Abstract:

One of the most promising anode materials for solid oxide electrolysis cell (SOEC) application is the Sr-doped LaMnO3 (LSM) which is known to have a high electronic conductivity but low ionic conductivity. To increase the ionic conductivity or diffusion of ions through the anode, Yttria-stabilized Zirconia (YSZ), which has good ionic conductivity, is proposed to be combined with LSM to create a composite electrode and to obtain a high mixed ionic and electronic conducting anode. In this study, composite of lanthanum strontium manganite and YSZ oxide, La0.8Sr0.2MnO3/Zr0.92Y0.08O2 (LSM/YSZ), with different wt.% compositions of LSM and YSZ were synthesized using solid-state reaction. The obtained prepared composite samples of 60, 50, and 40 wt.% LSM with remaining wt.% of 40, 50, and 60, respectively for YSZ were fully characterized for its microstructure by using powder X-ray diffraction (XRD), Thermogravimetric analysis (TGA), Fourier transform infrared (FTIR), and Scanning electron microscope/Energy dispersive spectroscopy (SEM/EDS) analyses. Surface morphology of the samples via SEM analysis revealed a well-sintered and densified pure LSM, while a more porous composite sample of LSM/YSZ was obtained. Electrochemical impedance measurements at intermediate temperature range (500-700 °C) of the synthesized samples were also performed which revealed that the 50 wt.% LSM with 50 wt.% YSZ (L50Y50) sample showed the highest total conductivity of 8.27x10-1 S/cm at 600 oC with 0.22 eV activation energy.

Keywords: ceramics, microstructure, fuel cells, electrochemical impedance spectroscopy

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666 Optical Characterization of Erbium-Mixed Silicon Nanocrystals

Authors: Khamael M. Abualnaja, Lidija Šiller, Ben R. Horrocks

Abstract:

The structural characterization of silicon nano crystals (SiNCs) have been carried out using transmission electron microscope (TEM) and atomic force microscopy (AFM). SiNCs are crystalline with an average diameter of 65 nm. Erbium trichloride was added to silicon nano crystals using a simple chemical procedure. Erbium is useful in this context because it has a narrow emission band at ⋍1536 nm which corresponds to a standard optical telecommunication wavelength. The optical properties of SiNCs and erbium-mixed SiNCs samples have been characterized using UV-vis spectroscopy, confocal Raman spectroscopy and photoluminescence spectroscopy (PL). SiNCs and erbium-mixed SiNCs samples exhibit an orange PL emission peak at around 595 nm that arise from radiative recombination of Si. Erbium-mixed SiNCs also shows a weak PL emission peak at ⋍1536 nm that attributed to the intra-4f transition in erbium ions. The intensity of the PL peak of Si in erbium-mixed SiNCs is increased in the intensity up to ×3 as compared to pure SiNCs. It was observed that intensity of 1536 nm peak decreased dramatically in the presence of silicon nano crystals and the PL emission peak of silicon nano crystals is increased. Therefore, the resulted data present that the energy transfer from erbium ions to SiNCs due to the chemical mixing method which used in this work.

Keywords: Silicon Nanocrystals (SiNCs), Erbium Ion, photoluminescence, energy transfer

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665 Development of (Cu2o-Zno) Binary Oxide Anode for Electrochemical Degradation of Dye

Authors: M. El Hajji, A. Hallaoui, L. Bazzi, A. Benlhachemi, O. Jbara, A. Tara, B. Bakiz, L. Bazzi, M. Hilali

Abstract:

The objective of this study was the development of zinc-copper binary oxide "Cu2O-ZnO" thin films by the electrochemical method "cathodic electrodeposition" and their uses for the degradation of a basic dye "Congo Red" by direct anodic oxidation. The anode materials synthesized were characterized by X-ray diffraction "XRD" and by scanning electron microscopy "SEM" coupled to EDS.

Keywords: Cu2O-ZnO thin films, cathodic electrodeposition, electrodegradation, Congo Red, BDD

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664 Nanoindentation Behaviour and Microstructural Evolution of Annealed Single-Crystal Silicon

Authors: Woei-Shyan Lee, Shuo-Ling Chang

Abstract:

The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are examined. The silicon specimens are annealed at temperatures of 250, 350 and 450ºC, respectively, for 15 minutes and are then indented to maximum loads of 30, 50 and 70 mN. The phase changes induced in the indented specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). For all annealing temperatures, an elbow feature is observed in the unloading curve following indentation to a maximum load of 30 mN. Under higher loads of 50 mN and 70 mN, respectively, the elbow feature is replaced by a pop-out event. The elbow feature reveals a complete amorphous phase transformation within the indented zone, whereas the pop-out event indicates the formation of Si XII and Si III phases. The experimental results show that the formation of these crystalline silicon phases increases with an increasing annealing temperature and indentation load. The hardness and Young’s modulus both decrease as the annealing temperature and indentation load are increased.

Keywords: nanoindentation, silicon, phase transformation, amorphous, annealing

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663 Elucidating the Defensive Role of Silicon-Induced Biochemical Responses in Wheat Exposed to Drought and Diuraphis noxia Infestation

Authors: Lintle Mohase, Ninikoe Lebusa, Mpho Stephen Mafa

Abstract:

Wheat is an economically important cereal crop. However, the changing climatic conditions that intensify drought in production areas, and additional pest infestation, such as the Russian wheat aphid (RWA, Diuraphis noxia), severely hamper its production. Drought and pest management require an additional water supply through irrigation and applying inorganic nutrients (including silicon) as alternative strategies to mitigate the stress effects. Therefore, other approaches are needed to enhance wheat productivity during drought stress and aphid abundance. Two wheat cultivars were raised under greenhouse conditions, exposed to drought stress, and treated with silicon before infestation with the South African RWA biotype 2 (RWASA2). The morphological evaluations showed that severe drought or a combination of drought and infestation significantly reduced the plant height of wheat cultivars. Silicon treatment did not alleviate the growth reduction. The biochemical responses were measured using spectrophotometric assays with specific substrates. An evaluation of the enzyme activities associated with oxidative stress and defence responses indicated that drought stress increased NADPH oxidase activity, while silicon treatment significantly reduced it in drought-stressed and infested plants. At 48 and 72 hours sampling periods, a combination of silicon, drought and infestation treatment significantly increased peroxidase activity compared to drought and infestation treatment. The treatment also increased β-1,3-glucanase activity 72 hours after infestation. In addition, silicon and drought treatment increased glucose but reduced sucrose accumulation. Furthermore, silicon, drought, and infestation treatment combinations reduced the sucrose content. Finally, silicon significantly increased the trehalose content under severe drought and infestation, evident at 48 and 72-hour sampling periods. Our findings shed light on silicon’s ability to induce protective biochemical responses during drought and aphid infestation.

Keywords: drought, enzyme activity, silicon, soluble sugars, Russian wheat aphid, wheat

Procedia PDF Downloads 77
662 Recombination Center Levels in Gold and Platinum Doped N-Type Silicon

Authors: Nam Chol Yu, Kyong Il Chu

Abstract:

Using DLTS measurement techniques, we determined the dominant recombination center levels (defects of both A and B) in gold and platinum doped n-type silicon. Also, the injection and temperature dependence of the Shockley-Read-Hall (SRH) carrier lifetime was studied under low-level injection and high-level injection. Here measurements show that the dominant level under low-level injection located at EC-0.25eV(A) correlated to the Pt+G1 and the dominant level under high-level injection located at EC-0.54eV(B) correlated to the Au+G4. Finally, A and B are the same dominant levels for controlling the lifetime in gold-platinum doped n-silicon.

Keywords: recombination center level, lifetime, carrier lifetime control, gold, platinum, silicon

Procedia PDF Downloads 157
661 Maximum Efficiency of the Photovoltaic Cells Using a Genetic Algorithm

Authors: Latifa Sabri, Mohammed Benzirar, Mimoun Zazoui

Abstract:

The installation of photovoltaic systems is one of future sources to generate electricity without emitting pollutants. The photovoltaic cells used in these systems have demonstrated enormous efficiencies and advantages. Several researches have discussed the maximum efficiency of these technologies, but only a few experiences have succeeded to right weather conditions to get these results. In this paper, two types of cells were selected: crystalline and amorphous silicon. Using the method of genetic algorithm, the results show that for an ambient temperature of 25°C and direct irradiation of 625 W/m², the efficiency of crystalline silicon is 12% and 5% for amorphous silicon.

Keywords: PV, maximum efficiency, solar cell, genetic algorithm

Procedia PDF Downloads 424