Search results for: low voltage trigger silicon controlled rectifier (LVTSCR)

Authors: Kyoung-Il Do, Jun-Geol Park, Hee-Guk Chae, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.

Keywords: electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR, power clamp, silicon controlled rectifier (SCR), latch-up

Procedia PDF Downloads 459

Authors: Jun-Geol Park, Kyoung-Il Do, Min-Ju Kwon, Kyung-Hyun Park, Yong-Seo Koo

Abstract:

This paper analyzed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuits with the turn-on time characteristics. The structures are the LVTSCR (Low Voltage Triggered SCR), the ZTSCR (Zener Triggered SCR) and the PTSCR (P-Substrate Triggered SCR). The three structures are for the 5V power clamp. In general, the structures with the low trigger voltage structure can have the fast turn-on characteristics than other structures. All the ESD protection circuits have the low trigger voltage by using the N+ bridge region of LVTSCR, by using the zener diode structure of ZTSCR, by increasing the trigger current of PTSCR. The simulation for the comparison with the turn-on time was conducted by the Synopsys TCAD simulator. As the simulation results, the LVTSCR has the turn-on time of 2.8 ns, ZTSCR of 2.1 ns and the PTSCR of 2.4 ns. The HBM simulation results, however, show that the PTSCR is the more robust structure of 430K in HBM 8kV standard than 450K of LVTSCR and 495K of ZTSCR. Therefore the PTSCR is the most effective ESD protection circuit for the 5V power clamp.

Keywords: ESD, SCR, turn-on time, trigger voltage, power clamp

Procedia PDF Downloads 348

Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage

Procedia PDF Downloads 397

Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: electro-static discharge (ESD), silicon controlled rectifier (SCR), holding voltage, protection circuit

Procedia PDF Downloads 380

Authors: Jun-Geol Park, Kyoung-Il Do, Min-Ju Kwon, Kyung-Hyun Park, Yong-Seo Koo

Abstract:

In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V.

Keywords: ESD, SCR, trigger voltage, holding voltage

Procedia PDF Downloads 525

Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage

Procedia PDF Downloads 548

Authors: Bo Bae Song, Byung Seok Lee, Hyun young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3, and D4).

Keywords: ESD, SCR, holding voltage, latch-up

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Authors: Hafez Fouad

Abstract:

Telemedicine applications have very low voltage which required High Precision Rectifier Design with high Sensitivity to operate at minimum input Voltage. In this work, we targeted 0.2V input voltage using 65 nm CMOS rectifier for Energy Harvesting Telemedicine application. The proposed rectifier which designed at 2.4GHz using two-stage structure found to perform in a better case where minimum operation voltage is lower than previous published paper and the rectifier can work at a wide range of low input voltage amplitude. The Performance Summary of Full-wave fully gate cross-coupled rectifiers (FWFR) CMOS Rectifier at F = 2.4 GHz: The minimum and maximum output voltages generated using an input voltage amplitude of 2 V are 490.9 mV and 1.997 V, maximum VCE = 99.85 % and maximum PCE = 46.86 %. The Performance Summary of Differential drive CMOS rectifier with external bootstrapping circuit rectifier at F = 2.4 GHz: The minimum and maximum output voltages generated using an input voltage amplitude of 2V are 265.5 mV (0.265V) and 1.467 V respectively, maximum VCE = 93.9 % and maximum PCE= 15.8 %.

Keywords: energy harvesting, embedded system, IoT telemedicine system, threshold voltage minimization, differential drive cmos rectifier, full-wave fully gate cross-coupled rectifiers CMOS rectifier

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Authors: Hyun Young Kim, Chung Kwang Lee, Han Hee Cho, Sang Woon Cho, Yong Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp

Procedia PDF Downloads 558

Authors: R. C. Sharma, Rishabh Bansal, Prajwal Menon, Manoj K. Sharma

Abstract:

Silicon-air battery is highly promising for electric vehicles due to its high theoretical energy density (8470 Whkg⁻¹) and its discharge products are non-toxic. For the first time, pure silicon and germanium powders are used as anode material. Nickel wire meshes embedded with charcoal and manganese dioxide powder as cathode and concentrated potassium hydroxide is used as electrolyte. Voltage-time curves have been presented in this study for pure silicon and germanium powder and 5% and 10% germanium with silicon powder. Silicon powder cell assembly gives a stable voltage of 0.88 V for ~20 minutes while Si-Ge provides cell voltage of 0.80-0.76 V for ~10-12 minutes, and pure germanium cell provides cell voltage 0.80-0.76 V for ~30 minutes. The cell voltage is higher for concentrated (10%) sodium hydroxide solution (1.08 V) and it is stable for ~40 minutes. A sharp decrease in cell voltage beyond 40 min may be due to rapid corrosion.

Keywords: Silicon-air battery, Germanium-air battery, voltage-time curve, open circuit voltage, Anodic corrosion

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Authors: Edwina G. Rodrigues, S. J. Bindhu, A. V. Rajesh

Abstract:

This paper proposes a switched capacitor based driver circuit for high power light emitting diodes with a front end rectifier. LEDs are low-voltage light sources, requiring a constant DC voltage or current to operate optimally. LEDs, therefore, require a device that can convert incoming AC power to the proper DC voltage, and regulate the current flowing through the LED during operation. Proposed topology has a front end converter. It is an AC-DC rectifier that works on bridgeless boost topology which shapes the input current waveform. The front end converter is followed by a DC-DC converter which provides a constant DC voltage across the LEDs. A 12V AC input is given to the input of frontend converter which rectifies and boost the voltage to 24v DC and gives it to the DC-DC converter. The DC-DC converter converts the 24V DC and regulates this constant DC voltage across the LEDs.

Keywords: bridgeless rectifier, power factor correction(PFC), SC converter, total harmonic distortion (THD)

Procedia PDF Downloads 873

Authors: Shao-Ku Kao

Abstract:

This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: wireless power transfer, active diode, delay compensation, time to voltage converter, PCE

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Authors: Madina Alimova, Margulan Ibraimov, Ayan Tileu

Abstract:

The paper describes methods for obtaining porous structures with the properties of a silicon-based memristor and explains the electrical properties of porous silicon films. Based on the results, there is a positive shift in the current-voltage characteristics (CVC) after each measurement, i.e., electrical properties depend not only on the applied voltage but also on the previous state. After 3 minutes of rest, the film returns to its original state (reset). The method for obtaining a porous silicon nanofilm with the properties of a memristor is simple and does not require additional effort. Based on the measurement results, the typical memristive behavior of the porous silicon nanofilm is analyzed.

Keywords: porous silicon, current-voltage characteristics, memristor, nanofilms

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Authors: Rahul Ganpat Mapari, D. G. Wakde

Abstract:

In this paper, a proposed approach to improve the power factor of single-phase rectifiers and to regulate the output voltage against the change in grid voltage and load is presented. This converter topology is evaluated on the basis of performance and its salient features like simplicity, low cost and high performance are discussed to analyze its applicability. The proposed control strategy is bridgeless, transformer-less and output current sensor-less and consists of only two Bi-directional IGBTs and two diodes. The voltage regulation is achieved by a simple voltage divider to communicate to a controller to control the duty cycles of PWM. A control technique and operational procedure are also developed, both theoretically and experimentally. The experimental results clearly verify the theoretical analysis from the prototype connected to grid unity.

Keywords: Active Rectifier (AC-DC), power factor, single phase, voltage regulation

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Authors: Sun-Ki Hong, Yong-Ho Cho, Ki-Seok Kim, Tae-Sam Kang

Abstract:

Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit.

Keywords: analog voltage inverter, capacitive load, gain control, dc-dc converter, piezoelectric, voltage waveform

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Authors: Kashif Habib, Zeeshan Ayyub

Abstract:

ZnO voltage dependent resistor was widely used as components of the electrical system for over-voltage protection. It has a wide application prospect in superconducting energy-removal, generator de-excitation, overvoltage protection of electrical & electronics equipment. At present, the research for the application of ZnO voltage dependent resistor stop, it uses just in the field of its nonlinear voltage current characteristic and overvoltage protection areas. There is no further study over the over-voltage breakdown characteristics, such as the combustion phenomena and the measure of the voltage/current when it breakdown, and the affect to its surrounding equipment. It is also a blind spot in its application. So, when we do the feature test of ZnO voltage dependent resistor, we need to design a reasonable test power supply, making the terminal voltage keep for sine wave, simulating the real use of PF voltage in power supply conditions. We put forward the solutions of using inverter to generate a controllable power. The paper mainly focuses on the breakdown characteristic test power supply of nonlinear ZnO voltage dependent resistor. According to the current mature switching power supply technology, we proposed power control system using the inverter as the core. The power mainly realize the sin-voltage output on the condition of three-phase PF-AC input, and 3 control modes (RMS, Peak, Average) of the current output. We choose TMS320F2812M as the control part of the hardware platform. It is used to convert the power from three-phase to a controlled single-phase sin-voltage through a rectifier, filter, and inverter. Design controller produce SPWM, to get the controlled voltage source via appropriate multi-loop control strategy, while execute data acquisition and display, system protection, start logic control, etc. The TMS320F2812M is able to complete the multi-loop control quickly and can be a good completion of the inverter output control.

Keywords: ZnO, multi-loop control, SPWM, non-linear load

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Authors: J. O. Bodunrin, S. J. Moloi

Abstract:

This study reports on the x-ray crystallography (XRD) structure of cadmium-implanted p-type silicon, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of unimplanted and cadmium-implanted silicon-based diodes. Cadmium was implanted at the energy of 160 KeV to the fluence of 10¹⁵ ion/cm². The results obtained indicate that the diodes were well fabricated, and the introduction of cadmium results in a change in behavior of the diodes from normal exponential to ohmic I-V behavior. The C-V measurements, on the other hand, show that the measured capacitance increased after cadmium doping due to the injected charge carriers. The doping density of the p-Si material and the device's Schottky barrier height was extracted, and the doping density of the undoped p-Si material increased after cadmium doping while the Schottky barrier height reduced. In general, the results obtained here are similar to those obtained on the diodes fabricated on radiation-hard material, indicating that cadmium is a promising metal dopant to improve the radiation hardness of silicon. Thus, this study would assist in adding possible options to improve the radiation hardness of silicon to be used in high energy physics experiments.

Keywords: cadmium, capacitance-voltage, current-voltage, high energy physics experiment, x-ray crystallography, XRD

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Authors: Chih-Chiang Hua, Yi-Hsiung Fang, Yuan-Jhen Siao

Abstract:

A bridgeless boost (BLB) power factor correction (PFC) rectifier with hold-up time extension circuit is proposed in this paper. A full bridge rectifier is widely used in the front end of the ac/dc converter. Since the shortcomings of the full bridge rectifier, the bridgeless rectifier is developed. A BLB rectifier topology is utilized with the hold-up time extension circuit. Unlike the traditional hold-up time extension circuit, the proposed extension scheme uses fewer active switches to achieve a longer hold-up time. Simulation results are presented to verify the converter performance.

Keywords: bridgeless boost (BLB), boost converter, power factor correction (PFC), hold-up time

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Authors: V. S. Klimash, Ye Min Thu

Abstract:

Thyristor rectifiers, inverters grid-tied, and AC voltage regulators are widely used in industry, and on electrified transport, they have a lot in common both in the power circuit and in the control system. They have a common mathematical structure and switching processes. At the same time, the rectifier, but the inverter units and thyristor regulators of alternating voltage are considered separately both theoretically and practically. They are written about in different books as completely different devices. The aim of this work is to combine them into one class based on the unity of the equations describing electromagnetic processes, and then, to show this unity on the mathematical model and experimental setup. Based on research from mathematics to the product, a conclusion is made about the methodology for the rapid conduct of research and experimental design work, preparation for production and serial production of converters with a unified bundle. In recent years, there has been a transition from thyristor circuits and transistor in modular design. Showing the example of thyristor rectifiers and AC voltage regulators, we can conclude that there is a unity of mathematical structures and grid-tied thyristor converters.

Keywords: direct current, alternating current, rectifier, AC voltage regulator, generalized mathematical model

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Authors: Jonas Kristiansen Nøland, Karina Hjelmervik, Urban Lundin

Abstract:

The thyristor bridge rectifier is often used for control of excitation equipment for synchronous generators. However, on the rotating shaft of brushless exciters, the diode bridge rectifier is mostly used. The step response of a conventional brushless rotating excitation system is slow compared to static excitation systems. This paper investigates the performance of different thyristor-controlled rectification topologies applied on the shaft of a 6-phase PMG exciter connected to a synchronous generator. One of the important issues is the steady-state torque ripple produced by the thyristor bridges.

Keywords: brushless exciters, rotating exciters, permanent magnet machines, synchronous generators

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Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet

Abstract:

This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce V_th of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.

Keywords: energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm

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Authors: Nidhi Vijay, A. K. Sharma

Abstract:

Many industrial applications require power from dc source. DC-DC boost converters are now being used all over the world for rapid transit system. Although these provide high efficiency, smooth control, fast response and regeneration, conventional DC-DC boost converters are unable to provide high step up voltage gain due to effect of power switches, rectifier diodes and equivalent series resistance of inductor and capacitor. This paper proposes new transformerless dc-dc converters to achieve high step up voltage gain as compared to the conventional converter without an extremely high duty ratio. Only one power stage is used in this converter. Steady-state analysis of voltage gain is discussed in brief. Finally, a comparative analysis is given in order to verify the results.

Keywords: MATLAB, DC-DC boost converter, voltage gain, voltage stress

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Authors: Luc Conti, Dimitry Dumont-Fillon, Harald van Lintel, Eric Chappel

Abstract:

Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.

Keywords: anodic bonding, evaporated glass, flow control valve, drug delivery

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Authors: Rawaa Maher, Ahmed Allam, Haruichi Kanaya, Adel B. Abdelrahman

Abstract:

In this paper, a compact, high-efficiency integrated rectenna is presented to operate in the 2.45 GHz band. A comparison between two rectifier topologies is performed to verify the benefits of removing the matching network from the rectifier. A rectifier high conversion efficiency of 74.1% is achieved. To complete the rectenna system, a novel omnidirectional antenna with high gain (3.72 dB) and compact size (25 mm * 29 mm) is designed and fabricated. The same antenna is used with a reflector for raising the gain to nearly 8.3 dB. The simulation and measurement results of the antenna are in good agreement.

Keywords: internet of things, integrated rectenna, rectenna, RF energy harvesting, wireless sensor networks(WSN)

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Authors: Amirouche Hammouda, Nacer Boucherou, Aicha Ziouche, Hayet Boudjellal

Abstract:

Silicon has excellent physical and electrical properties for optoelectronics industry. It is a promising material with many advantages. On Raman characterization of thin films deposited on crystalline silicon substrate, the signal Raman of amorphous silicon is often disturbed by the Raman signal of the crystalline silicon substrate. In this paper, we propose to characterize thin layers of amorphous silicon deposited on crystalline silicon substrates. The results obtained have shown the possibility to bring out the Raman spectrum of deposited layers by optimizing experimental parameters.

Keywords: raman scattering, amorphous silicon, crystalline silicon, thin films

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Authors: Gu Zhonghua

Abstract:

Control method of bulk silicon dioxide etching process to approach then expose silicon waveguide has been developed. It has been demonstrated by silicon waveguide of photonics devices. It is also able to generalize other applications. Use plasma dry etching to etch bulk silicon dioxide and approach oxide-silicon interface accurately, then use dilute HF wet etching to etch silicon dioxide residue layer to expose the silicon waveguide as soft landing. Plasma dry etch macro loading effect and endpoint technology was used to determine dry etch time accurately with a low wafer expose ratio.

Keywords: waveguide, etch, control, silicon loss

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Authors: Mohammad Arif Sobhan Bhuiyan, Zainal Abidin Nordin, Mamun Bin Ibne Reaz

Abstract:

A compact and power efficient high performance Voltage Controlled Oscillator (VCO) is a must in analog and digital circuits especially in the communication system, but the best trade-off among the performance parameters is a challenge for researchers. In this paper, a design of a compact 3-stage differential voltage controlled ring oscillator (VCRO) with low phase noise, low power and higher tuning bandwidth is proposed in 0.18 µm CMOS technology. The VCRO is designed with symmetric load and positive feedback techniques to achieve higher gain and minimum delay. The proposed VCRO can operate at tuning range of 3.9-5.0 GHz at 1.6 V supply voltage. The circuit consumes only 1.0757 mW of power and produces -129 dbc/Hz. The total active area of the proposed VCRO is only 11.74 x 37.73 µm2. Such a VCO can be the best choice for compact and low-power RF applications.

Keywords: CMOS, VCO, VCRO, oscillator

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Authors: G. K. S. Prakash, Rao K. Srinivasa

Abstract:

MEMS plays an important role in wide range of applications like biological, automobiles, military and communication engineering. This paper mainly investigates on capacitive shunt RF MEMS switch with low actuation voltage and low insertion losses. To trim the pull-in voltage, a step structure has introduced to trim air gap between the beam and the dielectric layer with that pull in voltage is trim to 2.9 V. The switching time of the proposed switch is 39.1μs, and capacitance ratio is 67. To get more isolation, we have used aluminum nitride as dielectric material instead of silicon nitride (Si₃N₄) and silicon dioxide (SiO₂) because aluminum nitride has high dielectric constant (εᵣ = 9.5) increases the OFF capacitance and eventually increases the isolation of the switch. The results show that the switch is ON state involves return loss (S₁₁) less than -25 dB up to 40 GHz and insertion loss (S₂₁) is more than -1 dB up to 35 GHz. In OFF state switch shows maximum isolation (S₂₁) of -38 dB occurs at a frequency of 25-27 GHz for K band applications.

Keywords: RF MEMS, actuation voltage, isolation loss, switches

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Authors: Farhan Beg

Abstract:

A space vector based pulse width modulation control technique for the three-phase PWM converter is proposed in this paper. The proposed control scheme is based on a synchronous reference frame model. High performance and efficiency is obtained with regards to the DC bus voltage and the power factor considerations of the PWM rectifier thus leading to low losses. MATLAB/SIMULINK are used as a platform for the simulations and a SIMULINK model is presented in the paper. The results show that the proposed model demonstrates better performance and properties compared to the traditional SPWM method and the method improves the dynamic performance of the closed loop drastically. For the space vector based pulse width modulation, sine signal is the reference waveform and triangle waveform is the carrier waveform. When the value of sine signal is larger than triangle signal, the pulse will start producing to high; and then when the triangular signals higher than sine signal, the pulse will come to low. SPWM output will change by changing the value of the modulation index and frequency used in this system to produce more pulse width. When more pulse width is produced, the output voltage will have lower harmonics contents and the resolution will increase.

Keywords: power factor, SVPWM, PWM rectifier, SPWM

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Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

Abstract:

The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: metallurgical grade silicon, solar grade silicon, impurity, refining, plasma

Procedia PDF Downloads 496