Search results for: solar grade silicon

Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

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The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: metallurgical grade silicon, solar grade silicon, impurity, refining, plasma

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Authors: Ching-Hua Li, Sheng-Hui Chen

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Sputtering is a popular technique with many advantages for thin film deposition. To fabricate a hydrogenated silicon thin film using sputtering process for solar cell applications, the ion bombardment during sputtering will generate microstructures (voids and columnar structures) to form silicon dihydride bodings as defects. The properties of heterojunction silicon solar cells were studied by using boron grains and silicon-boron targets. Finally, an 11.7% efficiency of solar cell was achieved by using all sputtering process.

Keywords: solar cell, sputtering process, pvd, alloy target

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Authors: M. Barbouche, M. Hajji, H. Ezzaouia

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This project is a step to manufacture solar grade silicon. It consists in designing an electrical arc furnace in order to produce metallurgical silicon Mg-Si with mutually carbon and high purity of silica. It concerns, first, the development of a functional analysis, a mechanical design and thermodynamic study. Our study covers also, the design of the temperature control system and the design of the electric diagrams. The furnace works correctly. A Labview interface was developed to control all parameters and to supervise the operation of furnace. Characterization tests with X-ray technique and Raman spectroscopy allow us to confirm the metallurgical silicon production.

Keywords: arc furnace, electrical design, silicon manufacturing, regulation, x-ray characterization

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Authors: Ahmad Shah Irshad, Naqibullah Kargar, Wais Samadi

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Building an integrated photovoltaic (BIPV) system is a new and modern technique for solar energy production in Kandahar. Due to its location, Kandahar has abundant sources of solar energy. People use both monocrystalline and polycrystalline silicon solar PV modules for the grid-connected solar PV system, and they don’t know which technology performs better for the BIPV system. This paper analyses the parameters described by IEC61724, “Photovoltaic System Performance Monitoring Guidelines for Measurement, Data Exchange and Analysis,” to evaluate which technology shows better performance for the BIPV system. The monocrystalline silicon BIPV system has a 3.1% higher array yield than the polycrystalline silicon BIPV system. The final yield is 0.2%, somewhat higher for monocrystalline silicon than polycrystalline silicon. Monocrystalline silicon has 0.2% and 4.5% greater yearly yield factor and capacity factors than polycrystalline silicon, respectively. Monocrystalline silicon shows 0.3% better performance than polycrystalline silicon. With 1.7% reduction and 0.4% addition in collection losses and useful energy produced, respectively, monocrystalline silicon solar PV system shows good performance than polycrystalline silicon solar PV system. But system losses are the same for both technologies. The monocrystalline silicon BIPV system injects 0.2% more energy into the grid than the polycrystalline silicon BIPV system.

Keywords: photovoltaic technologies, performance analysis, solar energy, solar irradiance, performance ratio

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Authors: Shahrazed Medeghri, Saad Hamzaoui, Mokhtar Zerdali

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The metallurgical grade silicon (MG-Si) is obtained from the reduction of silica (SiO₂) in an induction furnace or an electric arc furnace. Impurities inherent in reduction process also depend on the quality of the raw material used. Among the applications of the silicon, it is used as a substrate for the photovoltaic conversion of solar energy and this conversion is wider as the purity of the substrate is important. Research is being done where the purpose is looking for new methods of manufacturing and purification of silicon, as well as new materials that can be used as substrates for the photovoltaic conversion of light energy. In this research, the technique of production of silicon in an induction furnace, using a high vacuum for fusion. Diatomaceous Silica (SiO2) used is 99 mass% initial purities, the carbon used is 6N of purity and the particle size of 63μm as starting materials. The final achieved purity of the material was above 50% by mass. These results demonstrate that this method is a technically reliable, and allows obtaining a better return on the amount 50% of silicon.

Keywords: induction furnaces, amorphous silica, carbon microstructure, silicon

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Authors: Kwang-Ho Kim, Kwan-Hong Min, Pyungwoo Jang, Chisup Jung, Kyu Seomoon

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By restricting the dimensions of silicon to less than Bohr radius of bulk crystalline silicon (∼5 nm), quantum confinement causes its effective bandgap to increase. Therefore, silicon quantum wells (QWs) using these quantum phenomena could be a good candidate to achieve high performance silicon solar cells. The Al2O3/Si QW structures were fabricated by using the successive deposition technique, as a quantum confinement device to increase the effective energy bandgap and passivation effect in Si surface for the 3rd generation solar cell applications. In Si/Al2O3 QWs, the thicknesses of Si layers and Al2O3 layers were varied between 1 to 5 nm, respectively. The roughness of deposited Si on Al2O3 was less than 4 Å in the thickness of 2 nm. By using the Al2O3/Si QW structures on Si surfaces, the lifetime measured by u-PCD technique increased as a result of passivated surface effects. The discussion about the other properties such as electrical and optical properties of the QWs structures as well as the fabricated solar cells will be presented in this paper.

Keywords: Al2O3/Si quantum well, quantum confinement, solar cells, third generation, successive deposition technique

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Authors: Abdulrahman M. Homadi

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As a great source of renewable energy, solar energy is considered to be one of the most important in the world, since it will be one of solutions cover the energy shortage in the future. Photovoltaic (PV) is the most popular and widely used among solar energy technologies. However, PV efficiency is fairly low and remains somewhat expensive. High temperature has a negative effect on PV efficiency and cooling system for these panels is vital, especially in warm weather conditions. This paper presents the results of a simulation study carried out on silicon solar cells to assess the effects of elevation on enhancing the efficiency of solar panels. The study included four different terrains. The study also took into account the direction of the wind hitting the solar panels. To ensure the simulation mimics reality, six silicon solar panels are designed in two columns and three rows, facing to the south at an angle of 30 ^o. The elevations are assumed to change from 10 meters to 200 meters. The results show that maximum increase in efficiency occurs when the wind comes from the north, hitting the back of the panels.

Keywords: solar panels, elevation, wind direction, efficiency

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Authors: Lawal Alkasim, Clement M. Gonah, Zainab S. Aliyu

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This work is focus on recovering silicon form photovoltaic cells and repurposing it toward the use in glass, ceramics or glass ceramics as it is made up of silicon material. Silicon is the main back-bone and responsible for the thermodynamic properties of glass, ceramics and glass ceramics materials. Antireflection silicon is soluble in hot alkali. Successfully the recovered material composed of silicon and silicon nitride of the A.R, with a small amount of silver, Aluminuim, lead & copper in the sunshine of crystalline/non-crystalline silicon solar cell. Aquaregia is used to remove the silver, Aluminium, lead & copper. The recovered material treated with hot alkali highly concentrated to produce sodium silicate, which is an alkali silicate glass (water glass). This type of glass is produced through chemical process, unlike other glasses that are produced through physical process of melting and non-crystalline solidification. It has showed a property of being alkali silicate glass from its solubility in water and insoluble in alcohol. The XRF analysis shows the presence of sodium silicate.

Keywords: unrecyclable solar PV, crystalline silicon, hot conc. alkali, sodium silicate

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Authors: Syed Sadique Anwer Askari, Mukul Kumar Das

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Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.

Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si

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Authors: Dimassi Wissem

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In this work, we investigate the effect of combination between the porous silicon (PS) layer passivized with Lithium Bromide (LiBr) and grooving of grain boundaries (GB) in multi crystalline silicon. The grain boundaries were grooved in order to reduce the area of these highly recombining regions. Using optimized conditions, grooved GB's enable deep phosphorus diffusion and deep metallic contacts. We have evaluated the effects of LiBr on the surface properties of porous silicon on the performance of silicon solar cells. The results show a significant improvement of the internal quantum efficiency, which is strongly related to the photo-generated current. We have also shown a reduction of the surface recombination velocity and an improvement of the diffusion length after the LiBr process. As a result, the I–V characteristics under the dark and AM1.5 illumination were improved. It was also observed a reduction of the GB recombination velocity, which was deduced from light-beam-induced-current (LBIC) measurements. Such grooving in multi crystalline silicon enables passivization of GB-related defects. These results are discussed and compared to solar cells based on untreated multi crystalline silicon wafers.

Keywords: Multicrystalline silicon, LiBr, porous silicon, passivation

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Authors: Ankita Gaur, Mouli Karmakar, Shyam

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In this study, a silicon solar cell has been modeled and analyzed to enhance its electrical performance by improving the optical properties using an antireflecting coating (ARC). The dynamic optical reflectance, transmittance along with the net transmissivity absorptivity product of each layer are assessed as per the diurnal variation of the angle of incidence using MATLAB 2019. The model is tested with various Anti-Reflective coatings and the performance has also been compared with uncoated cells. ARC improves the optical transmittance of the photon. Higher transmittance of ⁓96.57% with lowest reflectance of ⁓ 1.74% at 12.00 hours was obtained with MgF₂ coated silicon cells. The electrical efficiency of the configured solar cell was evaluated for a composite climate of New Delhi, India, for all weather conditions. The annual electricity generation for Anti-reflective coated and uncoated crystalline silicon PV Module was observed to be 103.14 KWh and 99.51 KWh, respectively.

Keywords: antireflecting coating, electrical efficiency, reflectance, solar cell, transmittance

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Authors: Julius Denafas, Irina Kliopova, Gintaras Denafas

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Three opportunities for implementation of industrial ecology principles in the real industrial production of c-Si solar cells and modules are presented in this study. It includes: material flow dematerialisation, product modification and industrial symbiosis. Firstly, it is shown how the collaboration between R&D institutes and industry helps to achieve significant reduction of material consumption by a) refuse from phosphor silicate glass cleaning process and b) shortening of silicon nitride coating production step. Secondly, it was shown how the modification of solar module design can reduce the CO2 footprint for this product and enhance waste prevention. It was achieved by implementing a frameless glass/glass solar module design instead of glass/backsheet with aluminium frame. Such a design change is possible without purchasing new equipment and without loss of main product properties like efficiency, rigidity and longevity. Thirdly, industrial symbiosis in the solar cell production is possible in such case when manufacturing waste (silicon wafer and solar cell breakage) also used solar modules are collected, sorted and supplied as raw-materials to other companies involved in the production chain of c-Si solar cells. The obtained results showed that solar cells produced from recycled silicon can have a comparable electrical parameters like produced from standard, commercial silicon wafers. The above mentioned work was performed at solar cell producer Soli Tek R&D in the frame of H2020 projects CABRISS and Eco-Solar.

Keywords: manufacturing, process optimisation, recycling, solar cells, solar modules, waste prevention

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Authors: Meziani Samir, Moussi Abderrahmane, Chaouchi Sofiane, Guendouzi Awatif, Djema Oussama

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Laser doping has a large potential for integration into silicon solar cell technologies. The ability to process local, heavily diffused regions in a self-aligned manner can greatly simplify processing sequences for the fabrication of selective emitter. The choice of laser parameters for a laser doping process with 532nm is investigated. Solid state lasers with different power and speed were used for laser doping. In this work, the aim is the formation of selective emitter solar cells with a reduced number of technological steps. In order to have a highly doped localized emitter region, we used a 532 nm laser doping. Note that this region will receive the metallization of the Ag grid by screen printing. For this, we use SOLIDWORKS software to design a single type of pattern for square silicon cells. Sheet resistances, phosphorus doping concentration and silicon bulk lifetimes of irradiated samples are presented. Additionally, secondary ion mass spectroscopy (SIMS) profiles of the laser processed samples were acquired. Scanning electron microscope and optical microscope images of laser processed surfaces at different parameters are shown and compared.

Keywords: laser doping, selective emitter, silicon, solar cells

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Authors: Lotfi Hedi Khezami, Mohamed Ben Rabha, N. Sboui, Mounir Gaidi, B. Bessais

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Metal-nano particle-assisted Chemical Etching is an extraordinary developed wet etching method of producing uniform semiconductor nano structure (nano wires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and opto electronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and opto electronic properties are presented in this paper.

Keywords: stain etching, porous silicon, silicon nanowires, reflectivity, lifetime, solar cells

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Authors: Gilbert Omorodion Osayemwenre, Edson Meyer, R. T. Taziwa

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The electrical analysis of single junction amorphous silicon solar modules is carried out using outdoor monitoring technique. Like crystalline silicon PV modules, the electrical characterisation and performance of single junction amorphous silicon modules are best described by its current-voltage (IV) characteristic. However, IV curve has a direct dependence on the type of PV technology and material properties used. The analysis reveals discrepancies in the modules performance parameter even though they are of similar technology. The aim of this work is to compare the electrical performance output of each module, using electrical parameters with the aid of PVPM 100040C IV tracer. These results demonstrated the relevance of standardising the performance parameter for effective degradation analysis of a-Si:H.

Keywords: PVPM 100040C IV tracer, SolarWatt part, single junction amorphous silicon module (a-Si:H), Staebler-Wronski (S-W) degradation effect

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Authors: Julius Denafas, Irina Kliopova, Gintaras Denafas

Abstract:

Three opportunities for implementation of industrial ecology principles in the real industrial production of c-Si solar cells and modules are presented in this study. It includes: material flow dematerialisation, product modification and industrial symbiosis. Firstly, it is shown how the collaboration between R&D institutes and industry helps to achieve significant reduction of material consumption by a) refuse from phosphor silicate glass cleaning process and b) shortening of SiNx coating production step. This work was performed in the frame of Eco-Solar project, where Soli Tek R&D is collaborating together with the partners from ISC-Konstanz institute. Secondly, it was shown how the modification of solar module design can reduce the CO2 footprint for this product and enhance waste prevention. It was achieved by implementing a frameless glass/glass solar module design instead of glass/backsheet with aluminium frame. Such a design change is possible without purchasing new equipment and without loss of main product properties like efficiency, rigidity and longevity. Thirdly, industrial symbiosis in the solar cell production is possible in such case when manufacturing waste (silicon wafer and solar cell breakage) are collected, sorted and supplied as raw-materials to other companies involved in the production chain of c-Si solar cells. The obtained results showed that solar cells produced from recycled silicon can have a comparable electrical parameters like produced from standard, commercial silicon wafers. The above mentioned work was performed at solar cell producer Soli Tek R&D in the frame of H2020 projects CABRISS and Eco-Solar.

Keywords: solar cells and solar modules, manufacturing, waste prevention, recycling

Procedia PDF Downloads 175

Authors: M. Maleczek, Leszek Bogdan, Kazimierz Drabczyk, Agnieszka Iwan

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Crystalline silicon (Si) solar cells are the main product in the market among the various photovoltaic technologies concerning such advantages as: material richness, high carrier mobilities, broad spectral absorption range and established technology. However, photovoltaic technology on the stiff substrates are heavier, more fragile and less cost-effective than devices on the flexible substrates to be applied in special applications. The main goal of our work was to incorporate silicon solar cells into various fabric, without any change of the electrical and mechanical parameters of devices. This work is realized for the GEKON project (No. GEKON2/O4/268473/23/2016) sponsored by The National Centre for Research and Development and The National Fund for Environmental Protection and Water Management. In our work, the polyamide or polyester fabrics were used as a flexible substrate in the created devices. Applied fabrics differ in tensile and tear strength. All investigated polyamide fabrics are resistant to weathering and UV, while polyester ones is resistant to ozone, water and ageing. The examined fabrics are tight at 100 cm water per 2 hours. In our work, commercial silicon solar cells with the size 156 × 156 mm were cut into nine parts (called single solar cells) by diamond saw and laser. Gap and edge after cutting of solar cells were checked by transmission electron microscope (TEM) to study morphology and quality of the prepared single solar cells. Modules with the size of 160 × 70 cm (containing about 80 single solar cells) were created and investigated by electrical and mechanical methods. Weight of constructed module is about 1.9 kg. Three types of solar cell architectures such as: -fabric/EVA/Si solar cell/EVA/film for lamination, -backsheet PET/EVA/Si solar cell/EVA/film for lamination, -fabric/EVA/Si solar cell/EVA/tempered glass, were investigated taking into consideration type of fabric and lamination process together with the size of solar cells. In investigated devices EVA, it is ethylene-vinyl acetate, while PET - polyethylene terephthalate. Depend on the lamination process and compatibility of textile with solar cell an efficiency of investigated flexible silicon solar cells was in the range of 9.44-16.64 %. Multi folding and unfolding of flexible module has no impact on its efficiency as was detected by Instron equipment. Power (P) of constructed solar module is 30 W, while voltage about 36 V. Finally, solar panel contains five modules with the polyamide fabric and tempered glass will be produced commercially for different applications (dual use).

Keywords: flexible devices, mechanical properties, silicon solar cells, textiles

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Authors: S. Maleczek, K. Drabczyk, L. Bogdan, A. Iwan

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It is known that for industrial applications using solar panel constructed from silicon solar cells require high-efficiency performance. One of the main problems in solar panels is different mechanical and structural defects, causing the decrease of generated power. To analyse defects in solar cells, various techniques are used. However, the thermal imaging is fast and simple method for locating defects. The main goal of this work was to analyze defects in constructed flexible silicon photovoltaic modules via thermal imaging and electroluminescence method. This work is realized for the GEKON project (No. GEKON2/O4/268473/23/2016) sponsored by The National Centre for Research and Development and The National Fund for Environmental Protection and Water Management. Thermal behavior was observed using thermographic camera (VIGOcam v50, VIGO System S.A, Poland) using a DC conventional source. Electroluminescence was observed by Steinbeis Center Photovoltaics (Stuttgart, Germany) equipped with a camera, in which there is a Si-CCD, 16 Mpix detector Kodak KAF-16803type. The camera has a typical spectral response in the range 350 - 1100 nm with a maximum QE of 60 % at 550 nm. In our work commercial silicon solar cells with the size 156 × 156 mm were cut for nine parts (called single solar cells) and used to create photovoltaic modules with the size of 160 × 70 cm (containing about 80 single solar cells). Flexible silicon photovoltaic modules on polyamides or polyester fabric were constructed and investigated taking into consideration anomalies on the surface of modules. Thermal imaging provided evidence of visible voltage-activated conduction. In electro-luminescence images, two regions are noticeable: darker, where solar cell is inactive and brighter corresponding with correctly working photovoltaic cells. The electroluminescence method is non-destructive and gives greater resolution of images thereby allowing a more precise evaluation of microcracks of solar cell after lamination process. Our study showed good correlations between defects observed by thermal imaging and electroluminescence. Finally, we can conclude that the thermographic examination of large scale photovoltaic modules allows us the fast, simple and inexpensive localization of defects at the single solar cells and modules. Moreover, thermographic camera was also useful to detection electrical interconnection between single solar cells.

Keywords: electro-luminescence, flexible devices, silicon solar cells, thermal imaging

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Authors: Leila Ayat, Afak Meftah

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Amorphous-silicon alloys have great promise as low cost solar cell materials. They have excellent photo-conductivity and high optical absorption to sunlight. Now PIN a-Si:H based solar cells are widely used in power generation modules. However, to improve the performance of these cells further, a better fundamental under-standing of the factors limiting cell performance in the homo junction PIN structure is necessary. In this paper we discuss the sensitivity of light J-V characteristics to various device and material parameters in PIN homo junction solar cells. This work is a numerical simulation of the output parameters of a PIN a-Si:H solar cell under AM1.5 spectrum. These parameters are the short circuit current (Jsc), the open circuit voltage (Voc), the fill factor (FF), the conversion efficiency. The simulation was performed with SCAPS-1D software version 3.3 developed at ELIS in Belgium by Marc Burgelman et al. The obtained results are in agreement with experiment. In addition, the effect of the thickness, doping density, capture cross sections of the gap states and the band microscopic mobilities on the output parameters of the cell are also presented.

Keywords: amorphous silicon p-i-n junctions, thin film, solar cells, sensitivity

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Authors: Hadis Pouyafar, D. Matin Alaghmandan

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Gallium arsenide (GaAs) solar cells are widely used in applications like spacecraft and satellites because they have a high absorption coefficient and efficiency and can withstand high-energy particles such as electrons and protons. With the energy crisis, there's a growing need for efficiency and cost-effective solar cells. GaAs cells, with their 46% efficiency compared to silicon cells 23% can be utilized in buildings to achieve nearly zero emissions. This way, we can use irradiation and convert more solar energy into electricity. III V semiconductors used in these cells offer performance compared to other technologies available. However, despite these advantages, Si cells dominate the market due to their prices. In our study, we took an approach by using software from the start to gather all information. By doing so, we aimed to design the optimal building that harnesses the full potential of solar energy. Our modeling results reveal a future; for GaAs cells, we utilized the Grasshopper plugin for modeling and optimization purposes. To assess radiation, weather data, solar energy levels and other factors, we relied on the Ladybug and Honeybee plugins. We have shown that silicon solar cells may not always be the choice for meeting electricity demands, particularly when higher power output is required. Therefore, when it comes to power consumption and the available surface area for photovoltaic (PV) installation, it may be necessary to consider efficient solar cell options, like GaAs solar cells. By considering the building requirements and utilizing GaAs technology, we were able to optimize the PV surface area.

Keywords: gallium arsenide (GaAs), optimization, sustainable building, GaAs solar cells

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Authors: Vallisree Sivathanu, Kumaraswamidhas Lakshmi Annamalai, Trupti Ranjan Lenka

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We report a tandem solar cell model with Silicon as the bottom cell absorber material and Cu₂BaSn(S, Se)₄(CBTSSe) as absorber material for the top cell. As a first step, the top and bottom cells were modelled and validated by comparison with the experiment. Once the individual cells are validated, then the tandem structure is modelled with Indium Tin Oxide(ITO) as conducting layer between the top and bottom cells. The tandem structure yielded better open circuit voltage and fill factor; however, the efficiency obtained is 7.01%. The top cell and the bottom cells are investigated with the help of electron-hole current density, photogeneration rate, and external quantum efficiency profiles. In order to minimize the various loss mechanisms in the tandem solar cell, the material parameters are optimized within experimentally achievable limits. Initially, the top cell optimization was carried out; then, the bottom cell is optimized for maximizing the light absorption, and upon minimizing the current and photon losses in the tandem structure, the maximum achievable efficiency is predicted to be 19.52%.

Keywords: CBTSSe, silicon, tandem, solar cell, device modeling, current losses, photon losses

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Authors: Sue-Yi Chen, Wei-Chun Hsu, Jon-Yiew Gan

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Si-based double-junction tandem solar cells have become a popular research topic because of the advantages of low manufacturing cost and high energy conversion efficiency. However, there is no set of calculations to select the appropriate top cell materials. Therefore, this paper will propose a simple but practical selection method. First of all, we calculate the S-Q limit and explain the reasons for developing tandem solar cells. Secondly, we calculate the theoretical energy conversion efficiency of the double-junction tandem solar cells while combining the commercial monocrystalline Si and materials' practical efficiency to consider the actual situation. Finally, we conservatively conclude that if considering 75% performance of the theoretical energy conversion efficiency of the top cell, the suitable bandgap energy range will fall between 1.38eV to 2.5eV. Besides, we also briefly describe some improvements of several proper materials, CZTS, CdSe, Cu2O, ZnTe, and CdS, hoping that future research can select and manufacture high-efficiency Si-based tandem solar cells based on this paper successfully. Most importantly, our calculation method is not limited to silicon solely. If other materials’ performances match or surpass silicon's ability in the future, researchers can also apply this set of deduction processes.

Keywords: high-efficiency solar cells, material selection, Si-based double-junction solar cells, Tandem solar cells, photovoltaics.

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Authors: Amirouche Hammouda, Nacer Boucherou, Aicha Ziouche, Hayet Boudjellal

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Silicon has excellent physical and electrical properties for optoelectronics industry. It is a promising material with many advantages. On Raman characterization of thin films deposited on crystalline silicon substrate, the signal Raman of amorphous silicon is often disturbed by the Raman signal of the crystalline silicon substrate. In this paper, we propose to characterize thin layers of amorphous silicon deposited on crystalline silicon substrates. The results obtained have shown the possibility to bring out the Raman spectrum of deposited layers by optimizing experimental parameters.

Keywords: raman scattering, amorphous silicon, crystalline silicon, thin films

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Authors: Gu Zhonghua

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Control method of bulk silicon dioxide etching process to approach then expose silicon waveguide has been developed. It has been demonstrated by silicon waveguide of photonics devices. It is also able to generalize other applications. Use plasma dry etching to etch bulk silicon dioxide and approach oxide-silicon interface accurately, then use dilute HF wet etching to etch silicon dioxide residue layer to expose the silicon waveguide as soft landing. Plasma dry etch macro loading effect and endpoint technology was used to determine dry etch time accurately with a low wafer expose ratio.

Keywords: waveguide, etch, control, silicon loss

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Authors: Brahim Mahfoud

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A three-dimensional (3D) numerical technique is used to investigate the possibility of reducing the price of manufacturing some silicon-based devices, particularly those in which minor temperature gradients can significantly reduce performance. The silicon melt under the magnetic field produces Lorentz force, which can effectively suppress the flow which is caused by temperature gradients. This might allow some silicon-based products, such as solar cells, to be manufactured using a less pure, and hence less expensive. The thermocapillary effect of the silicon melt flow in thin annular pools subjected to an externally induced magnetic field was observed. The results reveal that with a strong enough magnetic field, isothermal lines change form and become concentric circles. As the amplitude of the magnetic field (Ha) grows, the azimuthal velocity and temperature at the free surface reduce, and the asymmetric 3D flow becomes axisymmetric steady when Ha surpasses a threshold value.

Keywords: magnetic field, manufacturing, silicon melt, thermocapillary

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Authors: Golam Saklayen, Sheikh Rashel al Ahmed, Ferdous Rahman, Ismail Abu Bakar

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Investigation on Lanthanum Fluoride LaF3 layer embedding Silicon Nanocrystals (Si-NCs) fabricated using a novel one-step chemical method has been reported in this presentation. Application of this material has been tested for low-voltage operating non-volatile memory and Schottkey-junction solar cell. Colloidal solution of Si-NCs in hydrofluoric acid (HF) was prepared from meso-porous silicon by ultrasonic vibration (sonication). This solution prevents the Si-NCs to be oxidized. On a silicon (Si) substrate, LaCl3 solution in HCl is allowed to react with the colloidal solution of prepared Si-NCs. Since this solution contains HF, LaCl3 reacts with HF and produces LaF3 crystals that deposits on the silicon substrate as a layer embedding Si-NCs. This a novel single step chemical way of depositing LaF3 insulating layer embedding Si-NCs. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. A non-stoichiometric LaF3 layer embedding Si-NCs was found by EDX analysis. The presence of Si-NCs was confirmed by SEM. FTIR spectroscopy of the deposited LaF3 powder also confirmed the presence of Si-NCs. The size of Si-NCs was found to be inversely proportional to the ultrasonic power. After depositing proper contacts on the back of Si and LaF3, the devices have been tested as a non-volatile memory and solar cell. A memory window of 525 mV was obtained at a programming and erasing bias of 2V. The LaF3 films with Si NCs showed strong absorption and was also found to decrease optical transmittance than pure LaF3 film of same thickness. The I-V characteristics of the films showed a dependency on the incident light intensity where current changed under various light illumination. Experimental results show a lot of promise for Si-NCs-embedded LaF3 layer to be used as an insulating layer in MIS devices as well as an photoactive material in Schottkey junction solar cells.

Keywords: silicon nanocrystals (Si NCs), LaF3, colloidal solution, Schottky junction solar cell

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Authors: Meriem Boukais, B. Dennai, A. Ould- Abbas

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The efficiency of SiGe solar cells might be improved by a wide-band-gap window layer. In this work we were simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the modeling, the thickness of silicon window was varied from 80 to 150 nm. The rest of layer’s thicknesses were kept constant, by varying thickness of window layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE).

Keywords: modeling, SiGe, AMPS-1D, quantum efficiency, conversion, efficiency

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Authors: A. A. Abaker Omer, H. B. Mohamed Balh, W. Liu, A. Abas, J. Yu, S. Li, W. Ma, W. El Kolaly, Y. Y. Ahmed Abuker

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We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO₃)₂/HF/H₂O₂/H₂O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations.

Keywords: Cu-catalyzed chemical etching, inverted pyramid nanostructured, reflection, solar cells

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Authors: Boukais Meriem, B. Dennai, A. Ould-Abbas

Abstract:

The efficiency of SiGe solar cells might be improved by a wide-band-gap window layer. In this work we were simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of silicon window was varied from 80 to 150 nm. The rest of layer’s thicknesses were kept constant, by varying thickness of window layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE).

Keywords: SiGe, AMPS-1D, simulation, conversion, efficiency, quantum efficiency

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Authors: Bouzaki Mohammed Moustafa, Benyoucef Boumediene, Benouaz Tayeb, Benhamou Amina

Abstract:

The ambient temperature and the defects density in the Hetero-junction with Intrinsic Thin layers solar cells (HIT) strongly influence their performances. In first part, we presented the bands diagram on the front/back simulated solar cell based on a-Si: H / c-Si (p)/a-Si:h. In another part, we modeled the following layers structure: ZnO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(p)/Ag where we studied the effect of the ambient temperature and the defects density in the gap of the crystalline silicon layer on the performance of the heterojunction solar cell with intrinsic layer (HIT).

Keywords: heterojunction solar cell, solar cell performance, bands diagram, ambient temperature, defect density

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