Search results for: Mach Zehnder bias voltage
1996 Bias Optimization of Mach-Zehnder Modulator Considering RF Gain on OFDM Radio-Over-Fiber System
Authors: Ghazi Al Sukkar, Yazid Khattabi, Shifen Zhong
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Most of the recent wireless LANs, broadband access networks, and digital broadcasting use Orthogonal Frequency Division Multiplexing techniques. In addition, the increasing demand of Data and Internet makes fiber optics an important technology, as fiber optics has many characteristics that make it the best solution for transferring huge frames of Data from a point to another. Radio over fiber is the place where high quality RF is converted to optical signals over single mode fiber. Optimum values for the bias level and the switching voltage for Mach-Zehnder modulator are important for the performance of radio over fiber links. In this paper, we propose a method to optimize the two parameters simultaneously; the bias and the switching voltage point of the external modulator of a radio over fiber system considering RF gain. Simulation results show the optimum gain value under these two parameters.Keywords: OFDM, Mach Zehnder bias voltage, switching voltage, radio-over-fiber, RF gain
Procedia PDF Downloads 4751995 Dynamics of Mach Zehnder Modulator in Open and Closed Loop Bias Condition
Authors: Ramonika Sengupta, Stuti Kachhwaha, Asha Adhiya, K. Satya Raja Sekhar, Rajwinder Kaur
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Numerous efforts have been done in the past decade to develop the methods of secure communication that are free from interception and eavesdropping. In fiber optic communication, chaotic optical carrier signals are used for data encryption in secure data transmission. Mach-Zehnder Modulators (MZM) are the key components for generating the chaotic signals to be used as optical carriers. This paper presents the dynamics of a lithium niobate MZM modulator under various biasing conditions. The chaotic fluctuations of the intensity of a laser diode have been generated using the electro-optic MZM modulator operating in a highly nonlinear regime. The modulator is driven in closed loop by its own output at an earlier time. When used as an electro-optic oscillator employing delayed feedback, the MZM displays a wide range of output waveforms of varying complexity. The dynamical behavior of the system ranges from periodic to nonlinear oscillations. The nonlinearity displayed by the system is reproducible and is easily controllable. In this paper, we demonstrate a wide variety of optical signals generated by MZM using easily controllable device parameters in both open and close loop bias conditions.Keywords: chaotic carrier, fiber optic communication, Mach-Zehnder modulator, secure data transmission
Procedia PDF Downloads 2711994 Refractometric Optical Sensing by Using Photonics Mach–Zehnder Interferometer
Authors: Gong Zhang, Hong Cai, Bin Dong, Jifang Tao, Aiqun Liu, Dim-Lee Kwong, Yuandong Gu
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An on-chip refractive index sensor with high sensitivity and large measurement range is demonstrated in this paper. The sensing structures are based on Mach-Zehnder interferometer configuration, built on the SOI substrate. The wavelength sensitivity of the sensor is estimated to be 3129 nm/RIU. Meanwhile, according to the interference pattern period changes, the measured period sensitivities are 2.9 nm/RIU (TE mode) and 4.21 nm/RIU (TM mode), respectively. As such, the wavelength shift and the period shift can be used for fine index change detection and larger index change detection, respectively. Therefore, the sensor design provides an approach for large index change measurement with high sensitivity.Keywords: Mach-Zehnder interferometer, nanotechnology, refractive index sensing, sensors
Procedia PDF Downloads 4451993 Characterization of Inertial Confinement Fusion Targets Based on Transmission Holographic Mach-Zehnder Interferometer
Authors: B. Zare-Farsani, M. Valieghbal, M. Tarkashvand, A. H. Farahbod
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To provide the conditions for nuclear fusion by high energy and powerful laser beams, it is required to have a high degree of symmetry and surface uniformity of the spherical capsules to reduce the Rayleigh-Taylor hydrodynamic instabilities. In this paper, we have used the digital microscopic holography based on Mach-Zehnder interferometer to study the quality of targets for inertial fusion. The interferometric pattern of the target has been registered by a CCD camera and analyzed by Holovision software. The uniformity of the surface and shell thickness are investigated and measured in reconstructed image. We measured shell thickness in different zone where obtained non uniformity 22.82 percent.Keywords: inertial confinement fusion, mach-zehnder interferometer, digital holographic microscopy, image reconstruction, holovision
Procedia PDF Downloads 3021992 Experimental Investigation of Partially Premixed Laminar Methane/Air Co-Flow Flames Using Mach-Zehnder Interferometry
Authors: Misagh Irandoost Shahrestani, Mehdi Ashjaee, Shahrokh Zandieh Vakili
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In this paper, partially premixed laminar methane/air co-flow flame is studied experimentally. Methane-air flame was established on an axisymmetric coannular burner. The fuel-air jet flows from the central tube while the secondary air flows from the region between the inner and the outer tube. The aim is to investigate the flame features and to develop a nonintrusive method for temperature measurement of methane/air partially premixed flame using Mach-Zehnder interferometry method. Different equivalence ratios and Reynolds numbers are considered. Flame generic visible appearance was also investigated and its various structures were studied. Three distinguished flame regimes were seen based on its appearance. A double flame structure can be seen for the equivalence ratio in the range of 1<Φ<2.1. By adding air to the mixture up to Φ=4 the flame has the characteristics of both premixed and non-premixed flames. Finally for 4<Φ<∞ the flame mainly becomes non-premixed like and the luminous sooting region on its tip is the obvious feature of this type of flames. The Mach-Zehnder method is used to obtain temperature field of a transparent fluid by means of index of refraction. Temperature obtained from optical techniques was compared with that of obtained from thermocouples in order to validate the results. Good agreement was observed for these two methods.Keywords: flame structure, Mach-Zehnder interferometry, partially premixed flame, temperature field
Procedia PDF Downloads 4801991 Measurement of Convective Heat Transfer from a Vertical Flat Plate Using Mach-Zehnder Interferometer with Wedge Fringe Setting
Authors: Divya Haridas, C. B. Sobhan
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Laser interferometric methods have been utilized for the measurement of natural convection heat transfer from a heated vertical flat plate, in the investigation presented here. The study mainly aims at comparing two different fringe orientations in the wedge fringe setting of Mach-Zehnder interferometer (MZI), used for the measurements. The interference fringes are set in horizontal and vertical orientations with respect to the heated surface, and two different fringe analysis methods, namely the stepping method and the method proposed by Naylor and Duarte, are used to obtain the heat transfer coefficients. The experimental system is benchmarked with theoretical results, thus validating its reliability in heat transfer measurements. The interference fringe patterns are analyzed digitally using MATLAB 7 and MOTIC Plus softwares, which ensure improved efficiency in fringe analysis, hence reducing the errors associated with conventional fringe tracing. The work also discuss the relative merits and limitations of the two methods used.Keywords: Mach-Zehnder interferometer (MZI), natural convection, Naylor method, Vertical Flat Plate
Procedia PDF Downloads 3631990 Optical Diagnostics of Corona Discharge by Laser Interferometry
Authors: N. Bendimerad, M. Lemerini, A. Guen
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In this work, we propose to determine the density of neutral particles of an electric discharge peak - Plan types performed in air at atmospheric pressure by applying a technique based on laser interferometry. The experimental methods used so far as the shadowgraph or stereoscopy, give rather qualitative results with regard to the determination of the neutral density. The neutral rotational temperature has been subject of several studies but direct measurements of kinetic temperature are rare. The aim of our work is to determine quantitatively and experimentally depopulation with a Mach-Zehnder type interferometer. This purely optical appearance of the discharge is important when looking to know the refractive index of any gas for any physicochemical applications.Keywords: laser source, Mach-Zehnder interferometer, refractive index, corona discharge
Procedia PDF Downloads 4451989 Bit Error Rate Monitoring for Automatic Bias Control of Quadrature Amplitude Modulators
Authors: Naji Ali Albakay, Abdulrahman Alothaim, Isa Barshushi
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The most common quadrature amplitude modulator (QAM) applies two Mach-Zehnder Modulators (MZM) and one phase shifter to generate high order modulation format. The bias of MZM changes over time due to temperature, vibration, and aging factors. The change in the biasing causes distortion to the generated QAM signal which leads to deterioration of bit error rate (BER) performance. Therefore, it is critical to be able to lock MZM’s Q point to the required operating point for good performance. We propose a technique for automatic bias control (ABC) of QAM transmitter using BER measurements and gradient descent optimization algorithm. The proposed technique is attractive because it uses the pertinent metric, BER, which compensates for bias drifting independently from other system variations such as laser source output power. The proposed scheme performance and its operating principles are simulated using OptiSystem simulation software for 4-QAM and 16-QAM transmitters.Keywords: automatic bias control, optical fiber communication, optical modulation, optical devices
Procedia PDF Downloads 1861988 Temperature Field Measurement of Premixed Landfill Gas Laminar Flame in a Cylindrical Slot Burner Using Mach-Zehnder Interferometry
Authors: Bahareh Najafian Ashrafi, Hossein Zeidabadinejad, Mehdi Ashjaee
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The temperature field is a key factor of flame heat transfer rate and therefore should be measured accurately. In this study, the Mach-Zehnder Interferometry method is applied to measure the temperature field of premixed air/landfill gas (LFG60:60% CH4+40% CO2) laminar flame. The three-dimensional flame of cylindrical slot burner can assume to be two-dimensional due to the high aspect ratio (L/W=10) of the rectangular slot. So, the method converts two-dimensional flame to closed isothermal curves called fringes and the outer fringes temperature is measured by thermocouples. The experiments are carried out for Reynolds numbers and equivalence ratios ranging from 100 to 400 and 1.0 to 1.4, respectively. Results show that by increasing the equivalence ratio or Reynolds number, the flame height increases. The maximum flame temperature decreases by increasing the equivalence ratio but does not change considerably by changing the Reynolds number.Keywords: landfill gas, Mach-Zehender interferometry, premix flame, slot burner, temperature filed
Procedia PDF Downloads 1491987 The Effects of Applied Negative Bias Voltage on Structure and Optical Properties of a-C:H Films
Authors: X. L. Zhou, S. Tunmee, I. Toda, K. Komatsu, S. Ohshio, H. Saitoh
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Hydrogenated amorphous carbon (a-C:H) films have been synthesized by a radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique with different bias voltage from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical information of all films were studied by X-ray photo electron spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O bonds, and relative carbon (C) and oxygen (O) atomics contents. The O contamination had affected on structure and optical properties. The true density of PLCH and a-C:H films were characterized by X-ray refractivity (XRR) method, showed the result as in the range of 1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The hardness was proportional to the true density of films. In addition, the optical properties i.e. refractive index (n) and extinction coefficient (k) of these films were determined by a spectroscopic ellipsometry (SE) method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k) respectively. These results indicated that the optical properties confirmed the Raman results as presenting the structure changed with applied bias voltage increased.Keywords: negative bias voltage, a-C:H film, oxygen contamination, optical properties
Procedia PDF Downloads 4801986 A Comparative Study on Electrical Characteristics of Au/n-SiC structure, with and Without Zn-Doped PVA Interfacial Layer at Room Temperature
Authors: M. H. Aldahrob, A. Kokce, S. Altindal, H. E. Lapa
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In order to obtain the detailed information about the effect of (Zn-doped PVA) interfacial layer, surface states (Nss) and series resistance (Rs) on electrical characteristics, both Au/n- type 4H-SiC (MS) with and without (Zn doped PVA) interfacial layer were fabricated to compare. The main electrical parameters of them were investigated using forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance –voltage (G/W –V) measurements were performed at room temperature. Experimental results show that the value of ideality factor (n), zero –bias barrier height (ΦBo), Rs, rectifier rate (RR=IF/IR) and the density of Nss are strong functions interfacial layer and applied bias voltage. The energy distribution profile of Nss was obtained from forward bias I-V data by taking into account voltage dependent effective BH (ΦBo) and ideality factor (n(V)). Voltage dependent profile of Rs was also obtained both by using Ohm’s law and Nicollian and Brew methods. The other main diode parameters such as the concentration of doping donor atom (ND), Fermi energy level (EF).BH (ΦBo), depletion layer with (WD) were obtained by using the intercept and slope of the reverse bias C-2 vs V plots. It was found that (Zn-doped PVA) interfacial layer lead to a quite decrease in the values Nss, Rs and leakage current and increase in shunt resistance (Rsh) and RR. Therefore, we can say that the use of thin (Zn-doped PVA) interfacial layer can quite improved the performance of MS structure.Keywords: interfacial polymer layer, thickness dependence, electric and dielectric properties, series resistance, interface state
Procedia PDF Downloads 2461985 Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Au/GaN Schottky diodes
Authors: Abdelaziz Rabehi
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The current–voltage (I–V) characteristics of Au/GaN Schottky diodes were measured at room temperature. In addition, capacitance–voltage–frequency (C–V–f) characteristics are investigated by considering the interface states (Nss) at frequency range 100 kHz to 1 MHz. From the I–V characteristics of the Schottky diode, ideality factor (n) and barrier height (Φb) values of 1.22 and 0.56 eV, respectively, were obtained from a forward bias I–V plot. In addition, the interface states distribution profile as a function of (Ess − Ev) was extracted from the forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (Φe) for the Schottky diode. The C–V curves gave a barrier height value higher than those obtained from I–V measurements. This discrepancy is due to the different nature of the I–V and C–V measurement techniques.Keywords: Schottky diodes, frequency dependence, barrier height, interface states
Procedia PDF Downloads 3001984 Analysis of Simple Mechanisms to Continuously Vary Mach Number in a Supersonic Wind Tunnel Facility
Authors: Prateek Kishore, T. M. Muruganandam
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Supersonic wind tunnel nozzles are generally capable of producing a constant Mach number flow in the test section of the wind tunnel. As a result, most of the supersonic vehicles are widely designed using steady state flow characteristics which may have errors while facing unsteady situations. This study aims to explore the possibility of varying the Mach number of the flow during wind tunnel operation. The nozzle walls are restricted to be inflexible for cooling near the throat due to high stagnation temperature requirement of the flow to simulate the conditions as experienced by the vehicle. Two simple independent mechanisms, rotation and translation of nozzle walls have been analyzed and the nozzle ranges have been optimized to vary the Mach number from Mach 2 to Mach 5 using minimum number of nozzles in the wind tunnel.Keywords: method of characteristics, nozzle, supersonic wind tunnel, variable mach number
Procedia PDF Downloads 2941983 Design of 900 MHz High Gain SiGe Power Amplifier with Linearity Improved Bias Circuit
Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang
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A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.Keywords: high gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra series
Procedia PDF Downloads 3381982 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007
Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari
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The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.Keywords: threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation
Procedia PDF Downloads 2821981 Established Novel Approach for Chemical Oxygen Demand Concentrations Measurement Based Mach-Zehner Interferometer Sensor
Authors: Su Sin Chong, Abdul Aziz Abdul Raman, Sulaiman Wadi Harun, Hamzah Arof
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Chemical Oxygen Demand (COD) plays a vital role determination of an appropriate strategy for wastewater treatment including the control of the quality of an effluent. In this study, a new sensing method was introduced for the first time and developed to investigate chemical oxygen demand (COD) using a Mach-Zehner Interferometer (MZI)-based dye sensor. The sensor is constructed by bridging two single mode fibres (SMF1 and SMF2) with a short section (~20 mm) of multimode fibre (MMF) and was formed by tapering the MMF to generate evanescent field which is sensitive to perturbation of sensing medium. When the COD concentration increase takes effect will induce changes in output intensity and effective refractive index between the microfiber and the sensing medium. The adequacy of decisions based on COD values relies on the quality of the measurements. Therefore, the dual output response can be applied to the analytical procedure enhance measurement quality. This work presents a detailed assessment of the determination of COD values in synthetic wastewaters. Detailed models of the measurement performance, including sensitivity, reversibility, stability, and uncertainty were successfully validated by proficiency tests where supported on sound and objective criteria. Comparison of the standard method with the new proposed method was also conducted. This proposed sensor is compact, reliable and feasible to investigate the COD value.Keywords: chemical oxygen demand, environmental sensing, Mach-Zehnder interferometer sensor, online monitoring
Procedia PDF Downloads 4931980 4-Channel CWDM Optical Transceiver Applying Silicon Photonics Ge-Photodiode and MZ-Modulator
Authors: Do-Won Kim, Andy Eu Jin Lim, Raja Muthusamy Kumarasamy, Vishal Vinayak, Jacky Wang Yu-Shun, Jason Liow Tsung Yang, Patrick Lo Guo Qiang
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In this study, we demonstrate 4-channel coarse wavelength division multiplexing (CWDM) optical transceiver based on silicon photonics integrated circuits (PIC) of waveguide Ge-photodiode (Ge-PD) and Mach Zehnder (MZ)-modulator. 4-channel arrayed PICs of Ge-PD and MZ-modulator are verified to operate at 25 Gbps/ch achieving 4x25 Gbps of total data rate. 4 bare dies of single-channel commercial electronics ICs (EICs) of trans-impedance amplifier (TIA) for Ge-PD and driver IC for MZ-modulator are packaged with PIC on printed circuit board (PCB) in a chip-on-board (COB) manner. Each single-channel EIC is electrically connected to the one channel of 4-channel PICs by wire bonds to trace. The PICs have 4-channel multiplexer for MZ-modulator and 4-channel demultiplexer for Ge-PD. The 4-channel multiplexer/demultiplexer have echelle gratings for4 CWDM optic signals of which center wavelengths are 1511, 1531, 1553, and 1573 nm. Its insertion loss is around 4dB with over 15dB of extinction ratio.The dimension of 4-channel Ge-PD is 3.6x1.4x0.3mm, and its responsivity is 1A/W with dark current of less than 20 nA.Its measured 3dB bandwidth is around 20GHz. The dimension of the 4-channel MZ-modulator is 3.6x4.8x0.3mm, and its 3dB bandwidth is around 11Ghz at -2V of reverse biasing voltage. It has 2.4V•cmbyVπVL of 6V for π shift to 4 mm length modulator.5x5um of Inversed tapered mode size converter with less than 2dB of coupling loss is used for the coupling of the lensed fiber which has 5um of mode field diameter.The PCB for COB packaging and signal transmission is designed to have 6 layers in the hybrid layer structure. 0.25 mm-thick Rogers Duroid RT5880 is used as the first core dielectric layer for high-speed performance over 25 Gbps. It has 0.017 mm-thick of copper layers and its dielectric constant is 2.2and dissipation factor is 0.0009 at 10 GHz. The dimension of both single ended and differential microstrip transmission lines are calculated using full-wave electromagnetic (EM) field simulator HFSS which RF industry is using most. It showed 3dB bandwidth at around 15GHz in S-parameter measurement using network analyzer. The wire bond length for transmission line and ground connection from EIC is done to have less than 300 µm to minimize the parasitic effect to the system.Single layered capacitors (SLC) of 100pF and 1000pF are connected as close as possible to the EICs for stabilizing the DC biasing voltage by decoupling. Its signal transmission performance is under measurement at 25Gbps achieving 100Gbps by 4chx25Gbps. This work can be applied for the active optical cable (AOC) and quad small form-factor pluggable (QSFP) for high-speed optical interconnections. Its demands are quite large in data centers targeting 100 Gbps, 400 Gbps, and 1 Tbps. As the demands of high-speed AOC and QSFP for the application to intra/inter data centers increase, this silicon photonics based high-speed 4 channel CWDM scheme can have advantages not only in data throughput but also cost effectiveness since it reduces fiber cost dramatically through WDM.Keywords: active optical cable(AOC), 4-channel coarse wavelength division multiplexing (CWDM), communication system, data center, ge-photodiode, Mach Zehnder (MZ) modulator, optical interconnections, optical transceiver, photonics integrated circuits (PIC), quad small form-factor pluggable (QSFP), silicon photonics
Procedia PDF Downloads 4171979 A CMOS-Integrated Hall Plate with High Sensitivity
Authors: Jin Sup Kim, Min Seo
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An improved cross-shaped hall plate with high sensitivity is described in this paper. Among different geometries that have been simulated and measured using Helmholtz coil. The paper describes the physical hall plate design and implementation in a 0.18-µm CMOS technology. In this paper, the biasing is a constant voltage mode. In the voltage mode, magnetic field is converted into an output voltage. The output voltage is typically in the order of micro- to millivolt and therefore, it must be amplified before being transmitted to the outside world. The study, design and performance optimization of hall plate has been carried out with the COMSOL Multiphysics. It is used to estimate the voltage distribution in the hall plate with and without magnetic field and to optimize the geometry. The simulation uses the nominal bias current of 1mA. The applied magnetic field is in the range from 0 mT to 20 mT. Measured results of the one structure over the 10 available samples show for the best sensitivity of 2.5 %/T at 20mT.Keywords: cross-shaped hall plate, sensitivity, CMOS technology, Helmholtz coil
Procedia PDF Downloads 1951978 Numerical Investigation Including Mobility Model for the Performances of Piezoresistive Sensors
Authors: Abdelaziz Beddiaf
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In this work, we present an analysis based on the study of mobility which is a very important electrical parameter of a piezoresistor and which is directly bound to the piezoresistivity effect in piezoresistive pressure sensors. We determine how the temperature affects mobility when the electric potential is applied. For this, a theoretical approach based on mobility in a p-type Silicon piezoresistor with that of a finite difference model for self-heating is developed. So, the evolution of mobility has been established versus time for different doping levels and with temperature rise provoked by self-heating using a numerical model combined with that of mobility. Furthermore, it has been calculated for some geometrical parameters of the sensor, such as membrane side length and thickness. Also, it is computed as a function of bias voltage. It was observed that mobility is strongly affected by the temperature rise induced by the applied potential when the sensor is actuated for a prolonged time as a consequence of drifting in the output response of the sensor. Finally, this work makes it possible to predict their temperature behavior due to self-heating and to improve this effect by optimizing the geometric properties of the device and by reducing the voltage source applied to the bridge.Keywords: Sensors, Piezoresistivity, Mobility, Bias voltage
Procedia PDF Downloads 901977 Analysis of Structural and Photocatalytical Properties of Anatase, Rutile and Mixed Phase TiO2 Films Deposited by Pulsed-Direct Current and Radio Frequency Magnetron Co-Sputtering
Authors: S. Varnagiris, M. Urbonavicius, S. Tuckute, M. Lelis, K. Bockute
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Amongst many water purification techniques, TiO2 photocatalysis is recognized as one of the most promising sustainable methods. It is known that for photocatalytical applications anatase is the most suitable TiO2 phase, however heterojunction of anatase/rutile phases could improve the photocatalytical activity of TiO2 even further. Despite the relative simplicity of TiO2 different synthesis methods lead to the highly dispersed crystal phases and photocatalytic activity of the corresponding samples. Accordingly, suggestions and investigations of various innovative methods of TiO2 synthesis are still needed. In this work structural and photocatalytical properties of TiO2 films deposited by the unconventional method of simultaneous co-sputtering from two magnetrons powered by pulsed-Direct Current (pDC) and Radio Frequency (RF) power sources with negative bias voltage have been studied. More specifically, TiO2 film thickness, microstructure, surface roughness, crystal structure, optical transmittance and photocatalytical properties were investigated by profilometer, scanning electron microscope, atomic force microscope, X-ray diffractometer and UV-Vis spectrophotometer respectively. The proposed unconventional two magnetron co-sputtering based TiO2 film formation method showed very promising results for crystalline TiO2 film formation while keeping process temperatures below 100 °C. XRD analysis revealed that by using proper combination of power source type and bias voltage various TiO2 phases (amorphous, anatase, rutile or their mixture) can be synthesized selectively. Moreover, strong dependency between power source type and surface roughness, as well as between the bias voltage and band gap value of TiO2 films was observed. Interestingly, TiO2 films deposited by two magnetron co-sputtering without bias voltage had one of the highest band gap values between the investigated films but its photocatalytic activity was superior compared to all other samples. It is suggested that this is due to the dominating nanocrystalline anatase phase with various exposed surfaces including photocatalytically the most active {001}.Keywords: films, magnetron co-sputtering, photocatalysis, TiO₂
Procedia PDF Downloads 1151976 Cell Elevator: A Novel Technique for Cell Sorting and Circulating Tumor Cell Detection and Discrimination
Authors: Kevin Zhao, Norman J. Horing
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A methodology for cells sorting and circulating tumor cell detection and discrimination is presented in this paper. The technique is based on Dielectrophoresis and microfluidic device theory. Specifically, the sorting of the cells is realized by adjusting the relation among the sedimentation forces, the drag force provided by the fluid, and the Dielectrophortic force that is relevant to the bias voltage applied on the device. The relation leads to manipulation of the elevation of the cells of the same kind to a height by controlling the bias voltage. Once the cells have been lifted to a position next to the bottom of the cell collection channel, the buffer fluid flashes them into the cell collection channel. Repeated elevation of the cells leads to a complete sorting of the cells in the sample chamber. A proof-of-principle example is presented which verifies the feasibility of the methodology.Keywords: cell sorter, CTC cell, detection and discrimination, dielectrophoresisords, simulation
Procedia PDF Downloads 4321975 Microstructure, Mechanical and Tribological Properties of (TiTaZrNb)Nx Medium Entropy Nitride Coatings: Influence of Nitrogen Content and Bias Voltage
Authors: Mario Alejandro Grisales, M. Daniela Chimá, Gilberto Bejarano Gaitán
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High entropy alloys (HEA) and nitride (HEN) are currently very attractive to the automotive, aerospace, metalworking and materials forming manufacturing industry, among others, for exhibiting higher mechanical properties, wear resistance, and thermal stability than binary and ternary alloys. In this work medium-entropy coatings of TiTaZrNb and the nitrides of (TiTaZrNb)Nx were synthesized on to AISI 420 and M2 steel samples by the direct current magnetron sputtering technique. The influence of the bias voltage supplied to the substrate on the microstructure, chemical- and phase composition of the matrix coating was evaluated, and the effect of nitrogen flow on the microstructural, mechanical and tribological properties of the corresponding nitrides was studied. A change in the crystalline structure from BCC for TiTaZrNb coatings to FCC for (TiTaZrNb)Nx was observed, that is associated with the incorporation of nitrogen into the matrix and the consequent formation of a solid solution of (TiTaZrNb)Nx. An increase in hardness and residual stresses was observed with increasing bias voltage for TiTaZrNb, reaching 12.8 GPa for the coating deposited with a bias of -130V. In the case of (TiTaZrNb)Nx nitride, a greater hardness of 23 GPa is achieved for the coating deposited with a N2 flow of 12 sccm, which slightly drops to 21.7 GPa for that deposited with N2 flow of 15 sccm. The slight reduction in hardness could be associated with the precipitation of the TiN and ZrN phases that are formed at higher nitrogen flows. The specific wear rate of the deposited coatings ranged between 0.5xexp13 and 0.6xexp13 N/m2. The steel substrate exhibited an average hardness of 2.0 GPa and a specific wear rate of 203.2exp13 N/m2. Both the hardness and the specific wear rate of the synthesized nitride coatings were higher than that of the steel substrate, showing a protective effect of the steel against wear.Keywords: medium entropy coatings, hard coatings, magnetron sputtering, tribology, wear resistance
Procedia PDF Downloads 691974 SCR-Based Advanced ESD Protection Device for Low Voltage Application
Authors: Bo Bae Song, Byung Seok Lee, Hyun young Kim, Chung Kwang Lee, Yong Seo Koo
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This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3, and D4).Keywords: ESD, SCR, holding voltage, latch-up
Procedia PDF Downloads 5731973 Drag Reduction of Base Bleed at Various Flight Conditions
Authors: Man Chul Jeong, Hyoung Jin Lee, Sang Yoon Lee, Ji Hyun Park, Min Wook Chang, In-Seuck Jeung
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This study focus on the drag reduction effect of the base bleed at supersonic flow. Base bleed is the method which bleeds the gas on the tail of the flight vehicle and reduces the base drag, which occupies over 50% of the total drag in any flight speed. Thus base bleed can reduce the total drag significantly, and enhance the total flight range. Drag reduction ratio of the base bleed is strongly related to the mass flow rate of the bleeding gas. Thus selecting appropriate mass flow rate is important. However, since the flight vehicle has various flight speed, same mass flow rate of the base bleed can have different drag reduction effect during the flight. Thus, this study investigates the effect of the drag reduction depending on the flight speed by numerical analysis using STAR-CCM+. The analysis model is 155mm diameter projectile with boat-tailed shape base. Angle of the boat-tail is chosen previously for minimum drag coefficient. Numerical analysis is conducted for Mach 2 and Mach 3, with various mass flow rate, or the injection parameter I, of the bleeding gas and the temperature of the bleeding gas, is fixed to 300K. The results showed that I=0.025 has the minimum drag at Mach 2, and I=0.014 has the minimum drag at Mach 3. Thus as the Mach number is higher, the lower mass flow rate of the base bleed has more effect on drag reduction.Keywords: base bleed, supersonic, drag reduction, recirculation
Procedia PDF Downloads 4141972 DG Power Plants Placement and Evaluation of its Effect on Improving Voltage Security Margin in Radial Distribution Networks
Authors: Atabak Faramarzpour, Mohsen Mohammadian
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In this article, we introduce the stability of power system voltage and state DG power plants placement and its effect on improving voltage security margin in radial distribution networks. For this purpose, first, important definitions in voltage stability area such as small and big voltage disturbances, instability, and voltage collapse, and voltage security definitions are stated. Then, according to voltage collapse time, voltage stability is classified and each one's characteristics are stated.Keywords: DG power plants, evaluation, voltage security, radial distribution networks
Procedia PDF Downloads 6691971 Bit Error Rate (BER) Performance of Coherent Homodyne BPSK-OCDMA Network for Multimedia Applications
Authors: Morsy Ahmed Morsy Ismail
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In this paper, the structure of a coherent homodyne receiver for the Binary Phase Shift Keying (BPSK) Optical Code Division Multiple Access (OCDMA) network is introduced based on the Multi-Length Weighted Modified Prime Code (ML-WMPC) for multimedia applications. The Bit Error Rate (BER) of this homodyne detection is evaluated as a function of the number of active users and the signal to noise ratio for different code lengths according to the multimedia application such as audio, voice, and video. Besides, the Mach-Zehnder interferometer is used as an external phase modulator in homodyne detection. Furthermore, the Multiple Access Interference (MAI) and the receiver noise in a shot-noise limited regime are taken into consideration in the BER calculations.Keywords: OCDMA networks, bit error rate, multiple access interference, binary phase-shift keying, multimedia
Procedia PDF Downloads 1741970 A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage
Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo
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In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.Keywords: ESD, SCR, latch-up, power clamp, holding voltage
Procedia PDF Downloads 5441969 Improved Small-Signal Characteristics of Infrared 850 nm Top-Emitting Vertical-Cavity Lasers
Authors: Ahmad Al-Omari, Osama Khreis, Ahmad M. K. Dagamseh, Abdullah Ababneh, Kevin Lear
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High-speed infrared vertical-cavity surface-emitting laser diodes (VCSELs) with Cu-plated heat sinks were fabricated and tested. VCSELs with 10 mm aperture diameter and 4 mm of electroplated copper demonstrated a -3dB modulation bandwidth (f-3dB) of 14 GHz and a resonance frequency (fR) of 9.5 GHz at a bias current density (Jbias) of only 4.3 kA/cm2, which corresponds to an improved f-3dB2/Jbias ratio of 44 GHz2/kA/cm2. At higher and lower bias current densities, the f-3dB2/ Jbias ratio decreased to about 30 GHz2/kA/cm2 and 18 GHz2/kA/cm2, respectively. Examination of the analogue modulation response demonstrated that the presented VCSELs displayed a steady f-3dB/ fR ratio of 1.41±10% over the whole range of the bias current (1.3Ith to 6.2Ith). The devices also demonstrated a maximum modulation bandwidth (f-3dB max) of more than 16 GHz at a bias current less than the industrial bias current standard for reliability by 25%.Keywords: current density, high-speed VCSELs, modulation bandwidth, small-signal characteristics, thermal impedance, vertical-cavity surface-emitting lasers
Procedia PDF Downloads 5661968 Spiking Behavior in Memristors with Shared Top Electrode Configuration
Authors: B. Manoj Kumar, C. Malavika, E. S. Kannan
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The objective of this study is to investigate the switching behavior of two vertically aligned memristors connected by a shared top electrode, a configuration that significantly deviates from the conventional single oxide layer sandwiched between two electrodes. The device is fabricated by bridging copper electrodes with mechanically exfoliated van der Waals metal (specifically tantalum disulfide and tantalum diselenide). The device demonstrates threshold-switching behavior in its I-V characteristics. When the input voltage signal is ramped with voltages below the threshold, the output current shows spiking behavior, resembling integrated and firing actions without extra circuitry. We also investigated the self-reset behavior of the device. Using a continuous constant voltage bias, we activated the device to the firing state. After removing the bias and reapplying it shortly afterward, the current returned to its initial state. This indicates that the device can spontaneously return to its resting state. The outcome of this investigation offers a fresh perspective on memristor-based device design and an efficient method to construct hardware for neuromorphic computing systems.Keywords: integrated and firing, memristor, spiking behavior, threshold switching
Procedia PDF Downloads 601967 A Study on Unidirectional Analog Output Voltage Inverter for Capacitive Load
Authors: Sun-Ki Hong, Nam-HeeByeon, Jung-Seop Lee, Tae-Sam Kang
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For Common R or R-L load to apply arbitrary voltage, the bridge traditional inverters don’t have any difficulties by PWM method. However for driving some piezoelectric actuator, arbitrary voltage not a pulse but a steady voltage should be applied. Piezoelectric load is considered as R-C load and its voltage does not decrease even though the applied voltage decreases. Therefore it needs some special inverter with circuit that can discharge the capacitive energy. Especially for unidirectional arbitrary voltage driving like as sine wave, it becomes more difficult problem. In this paper, a charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator is proposed. The circuit has charging and discharging switches for increasing and decreasing output voltage. With the proposed simple circuit, the load voltage can have any unidirectional level with tens of bandwidth because the load voltage can be adjusted by switching the charging and discharging switch appropriately. The appropriateness is proved from the simulation of the proposed circuit.Keywords: DC-DC converter, analog output voltage, sinusoidal drive, piezoelectric load, discharging circuit
Procedia PDF Downloads 377