Search results for: tunable resistors.

Authors: Abdeljalil Métioui

Abstract:

We discuss the alternative conceptions of students analysing the behaviour of electrical circuits. The present paper aims at, on one hand, studying the misconceptions of 80 elementary pre-service teachers from Quebec in Canada, in relation to the current source in DC circuits. To do this, they completed a two-choice questionnaire (true or false) with justification. Data analysis identifies many conceptual difficulties. For example, their majority considered a battery as a source of constant current: When a circuit composed of battery and resistors is modified, the current supplied by the battery remains unchanged. On the other hand, considering the alternatives conceptions identified we develop a two-tier test about source current. The aim of this two-tier test is to help teachers to diagnose rapidly their students’ misconceptions in order to consider in their teaching.   

Keywords: Two-tier diagnostic test, current source, pre-service teachers, alternative conceptions after teaching, qualitative study.

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Authors: Kayvan Ahmadi, Hossein Shamsi

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This paper proposes a low-voltage and low-power fully integrated digitally tuned continuous-time channel selection filter for WiMAX applications. A 5th-order elliptic low-pass filter is realized in a Gm-C topology. The bandwidth of the fully differential filter is reconfigurable from 2.5MHz to 20MHz (8x) for different requirements in WiMAX applications. The filter is simulated in a standard 90nm CMOS process. Simulation results show the THD (@Vout =100mVpp) is less than -66dB. The in-band ripple of the filter is about 0.15dB. The filter consumes 1.5mW from a supply voltage of 0.9V.

Keywords: Common-mode feedback, continuous-time, fully differential transconductor, Gm-C topology, low-voltage

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Authors: D. G. Piliposyan

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Propagation of electro-elastic waves in a piezoelectric waveguide with finite stacks and a defect layer is studied using a modified transfer matrix method. The dispersion equation for a periodic structure consisting of unit cells made up from two piezoelectric materials with metallized interfaces is obtained. An analytical expression, for the transmission coefficient for a waveguide with finite stacks and a defect layer, that is found can be used to accurately detect and control the position of the passband within a stopband. The result can be instrumental in constructing a tunable waveguide made of layers of different or identical piezoelectric crystals and separated by metallized interfaces.

Keywords: Defect mode, Bloch waves, periodic phononic crystal, piezoelectric composite waveguide.

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Authors: Prungsak Uttaphut

Abstract:

An implementation of current-mode multiphase sinusoidal oscillators is presented. Using CFTA-based lossy integrators, odd and odd/even phase systems can be realized with following advantages. The condition of oscillation and frequency of oscillation can be orthogonally tuned. The high output impedances facilitate easy driving an external load without additional current buffers. The proposed MSOs provide odd or even phase signals that are equally spaced in phase and equal amplitude. The circuit requires one CFTA, one resistor and one grounded capacitor per phase without additional current amplifier. The results of PSPICE simulations using CMOS CFTA are included to verify theory.

Keywords: multiphase sinusoidal oscillator, current-mode, CFTA, lossy integrator

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Authors: Amin Sedighfar, M. R. Moniri

Abstract:

Determination of state of charge (SOC) in today’s world becomes an increasingly important issue in all the applications that include a battery. In fact, estimation of the SOC is a fundamental need for the battery, which is the most important energy storage in Hybrid Electric Vehicles (HEVs), smart grid systems, drones, UPS and so on. Regarding those applications, the SOC estimation algorithm is expected to be precise and easy to implement. This paper presents an online method for the estimation of the SOC of Valve-Regulated Lead Acid (VRLA) batteries. The proposed method uses the well-known Kalman Filter (KF), and Neural Networks (NNs) and all of the simulations have been done with MATLAB software. The NN is trained offline using the data collected from the battery discharging process. A generic cell model is used, and the underlying dynamic behavior of the model has used two capacitors (bulk and surface) and three resistors (terminal, surface, and end), where the SOC determined from the voltage represents the bulk capacitor. The aim of this work is to compare the performance of conventional integration-based SOC estimation methods with a mixed algorithm. Moreover, by containing the effect of temperature, the final result becomes more accurate. 

Keywords: Kalman filter, neural networks, state-of-charge, VRLA battery.

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Authors: Hamed Alipour-Banaei, Farhad Mehdizadeh

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We report the design and characterization of ultra high quality factor filter based on one-dimensional photonic-crystal Thue- Morse sequence structure. The behavior of aperiodic array of photonic crystal structure is numerically investigated and we show that by changing the angle of incident wave, desired wavelengths could be tuned and a tunable filter is realized. Also it is shown that high quality factor filter be achieved in the telecommunication window around 1550 nm, with a device based on Thue-Morse structure. Simulation results show that the proposed structure has a quality factor more than 100000 and it is suitable for DWDM communication applications.

Keywords: Thue-Morse, filter, quality factor.

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Authors: M. Javadzadeh, H. Khoshsima

Abstract:

In this article, we present a layout printing way for producing Fresnel zone on 1294-1b doped liquid crystal with Methyl-Red azo dye. We made a Fresnel zone mask with 25 zones and radius of 5 mm using lithography technique. With layout printing way, we recorded mask’s pattern on cell with λ=532 nm solid-state diode pump laser. By recording Fresnel zone pattern on cell and making Fresnel pattern on the surface of cell, odd and even zones, will form. The printed pattern, because of Azo dye’s photoisomerization, was permanent. Experimentally, we saw focal length tunability from 32 cm to 43 cm.

Keywords: Liquid crystal, lens, Fresnel zone, diffraction, Fresnel lens.

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Authors: S. M. Mahbobur Rahman

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Whole building energy simulation models are widely used for predicting future energy consumption, performance diagnosis and optimum control.  Black box building energy modeling approach has been heavily studied in the past decade. The thermal response of a building can also be modeled using a network of interconnected resistors (R) and capacitors (C) at each node called R-C network. In this study, a model building, Case 600, as described in the “Standard Method of Test for the Evaluation of Building Energy Analysis Computer Program”, ASHRAE standard 140, is studied along with a 3R2C thermal network model and the ASHRAE clear sky solar radiation model. Although building an energy model involves two important parts of building component i.e., the envelope and internal mass, the effect of building internal mass is not considered in this study. All the characteristic parameters of the building envelope are evaluated as on Case 600. Finally, monthly building energy consumption from the thermal network model is compared with a simple-box energy model within reasonable accuracy. From the results, 0.6-9.4% variation of monthly energy consumption is observed because of the south-facing windows.

Keywords: ASHRAE case study, clear sky solar radiation model, energy modeling, thermal network model.

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Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

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In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: Optical amplifiers, EDFA, L-band, optical networks.

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Authors: Thanh-Phong Dao, Shyh-Chour Huang

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This study presents a quasi-zero stiffness (QZS) vibration isolator using flexure-based spring mechanisms which afford both negative and positive stiffness elements, which enable self-adjustment. The QZS property of the isolator is achieved at the equilibrium position. A nonlinear mathematical model is then developed, based on the pre-compression of the flexure-based spring mechanisms. The dynamics are further analyzed using the Harmonic Balance method. The vibration attention efficiency is illustrated using displacement transmissibility, which is then compared with the corresponding linear isolator. The effects of parameters on performance are also investigated by numerical solutions. The flexure-based spring mechanisms are subsequently designed using the concept of compliant mechanisms, with evaluation by ANSYS software, and simulations of the QZS isolator.

Keywords: Vibration isolator, quasi-zero stiffness, flexure-based spring mechanisms, compliant mechanism.

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Authors: Zhenguo Vincent Chia, Sheung Yan Simon Ng, Minkyu Je

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This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.

Keywords: Conventional, Current Mode Logic, DAC, Decoder

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Authors: Maninder Kaur Gill, Alpana Agarwal

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It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values.

Keywords: Device under test, open-loop voltage gain, operational amplifier, test circuit.

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Authors: D. D. Wang, J.C. Lam, Z. H. Mai

Abstract:

Controlled modification of appropriate sharpness for nanotips is of paramount importance to develop novel materials and functional devices at a nanometer resolution. Herein, we present a reliable and unique strategy of laser irradiation enhanced physicochemical etching to manufacture super sharp tungsten tips with reproducible shape and dimension as well as high yields (~80%). The corresponding morphology structure evolution of tungsten tips and laser-tip interaction mechanisms were systematically investigated and discussed using field emission scanning electron microscope (SEM) and physical optics statistics method with different fluences under 532 nm laser irradiation. This work paves the way for exploring more accessible metallic tips applications with tunable apex diameter and aspect ratio, and, furthermore, facilitates the potential sharpening enhancement technique for other materials used in a variety of nanoscale devices.

Keywords: Tungsten tip sharpening, Laser irradiation, Physicochemical etching, Light-matter interaction.

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Authors: Chih-Jer Lin, Chun-Ying Lee, Chiang-Ho Cheng, Geng-Fung Chen

Abstract:

This paper investigates experimental studies on vibration suppression for a cantilever beam using an Electro-Rheological (ER) sandwich shock absorber. ER fluid (ERF) is a class of smart materials that can undergo significant reversible changes immediately in its rheological and mechanical properties under the influence of an applied electric field. Firstly, an ER sandwich beam is fabricated by inserting a starch-based ERF into a hollow composite beam. At the same time, experimental investigations are focused on the frequency response of the ERF sandwich beam. Second, the ERF sandwich beam is attached to a cantilever beam to become as a shock absorber. Finally, a fuzzy semi-active vibration control is designed to suppress the vibration of the cantilever beam via the ERF sandwich shock absorber. To check the consistency of the proposed fuzzy controller, the real-time implementation validated the performance of the controller.

Keywords: Electro-Rheological Fluid, Semi-active vibration control, shock absorber, fuzzy control, Real-time control.

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Authors: A. Soria-Verdugo, A. Morato-Godino, L. M. García-Gutiérrez, N. García-Hernando

Abstract:

The evolution of the pyrolysis of sewage sludge in a fixed and a fluidized bed was analyzed using a novel measuring technique. This original measuring technique consists of installing the whole reactor over a precision scale, capable of measuring the mass of the complete reactor with enough precision to detect the mass released by the sewage sludge sample during its pyrolysis. The inert conditions required for the pyrolysis process were obtained supplying the bed with a nitrogen flowrate, and the bed temperature was adjusted to either 500 ºC or 600 ºC using a group of three electric resistors. The sewage sludge sample was supplied through the top of the bed in a batch of 10 g. The measurement of the mass released by the sewage sludge sample was employed to determine the evolution of the reaction rate during the pyrolysis, the total amount of volatile matter released, and the pyrolysis time. The pyrolysis tests of sewage sludge in the fluidized bed were conducted using two different bed materials of the same size but different densities: silica sand and sepiolite particles. The higher density of silica sand particles induces a flotsam behavior for the sewage sludge particles which move close to the bed surface. In contrast, the lower density of sepiolite produces a neutrally-buoyant behavior for the sewage sludge particles, which shows a proper circulation throughout the whole bed in this case. The analysis of the evolution of the pyrolysis process in both fluidized beds show that the pyrolysis is faster when buoyancy effects are negligible, i.e. in the bed conformed by sepiolite particles. Moreover, sepiolite was found to show an absorbent capability for the volatile matter released during the pyrolysis of sewage sludge.

Keywords: Bubbling fluidized bed, pyrolysis time, segregation effects, sewage sludge.

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Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa₂Ca₂Cu₃O₁₀ as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF₂ as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF₂)^NInSb(Si/MgF₂)^N named S.I, and (Si/MgF₂)^NHgBa₂Ca₂Cu₃O₁₀(Si/MgF₂)^N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.

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Authors: Chih Chin Yang, Yen Chun Lin, Hsiao Hsuan Cheng

Abstract:

Three similar negative differential resistance (NDR) profiles with both high peak to valley current density ratio (PVCDR) value and high peak current density (PCD) value in unity resonant tunneling electronic circuit (RTEC) element is developed in this paper. The PCD values and valley current density (VCD) values of the three NDR curves are all about 3.5 A and 0.8 A, respectively. All PV values of NDR curves are 0.40 V, 0.82 V, and 1.35 V, respectively. The VV values are 0.61 V, 1.07 V, and 1.69 V, respectively. All PVCDR values reach about 4.4 in three NDR curves. The PCD value of 3.5 A in triple PVCDR RTEC element is better than other resonant tunneling devices (RTD) elements. The high PVCDR value is concluded the lower VCD value about 0.8 A. The low VCD value is achieved by suitable selection of resistors in triple PVCDR RTEC element. The low PV value less than 1.35 V possesses low power dispersion in triple PVCDR RTEC element. The designed multiple value logical level (MVLL) system using triple PVCDR RTEC element provides equidistant logical level. The logical levels of MVLL system are about 0.2 V, 0.8 V, 1.5 V, and 2.2 V from low voltage to high voltage and then 2.2 V, 1.3 V, 0.8 V, and 0.2 V from high voltage back to low voltage in half cycle of sinusoid wave. The output level of four levels MVLL system is represented in 0.3 V, 1.1 V, 1.7 V, and 2.6 V, which satisfies the NMP condition of traditional two-bit system. The remarkable logical characteristic of improved MVLL system with paralleled capacitor are with four significant stable logical levels about 220 mV, 223 mV, 228 mV, and 230 mV. The stability and articulation of logical levels of improved MVLL system are outstanding. The average holding time of improved MVLL system is approximately 0.14 μs. The holding time of improved MVLL system is fourfold than of basic MVLL system. The function of additional capacitor in the improved MVLL system is successfully discovered.

Keywords: Capacitance, Logical level, Constant current source

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Authors: Chih-Jer Lin, Chun-Ying Lee, Ying Liu, Chiang-Ho Cheng

Abstract:

The main objective of this article is to present the semi-active vibration control using an electro-rheological fluid embedded sandwich structure for a cantilever beam. ER fluid is a smart material, which cause the suspended particles polarize and connect each other to form chain. The stiffness and damping coefficients of the ER fluid can be changed in 10 micro seconds; therefore, ERF is suitable to become the material embedded in the tunable vibration absorber to become a smart absorber. For the ERF smart material embedded structure, the fuzzy control law depends on the experimental expert database and the proposed self-tuning strategy. The electric field is controlled by a CRIO embedded system to implement the real application. This study investigates the different performances using the Type-1 fuzzy and interval Type-2 fuzzy controllers. The Interval type-2 fuzzy control is used to improve the modeling uncertainties for this ERF embedded shock absorber. The self-tuning vibration controllers using Type-1 and Interval Type-2 fuzzy law are implemented to the shock absorber system. Based on the resulting performance, Internal Type-2 fuzzy is better than the traditional Type-1 fuzzy control for this vibration control system.

 

Keywords: Electro-Rheological Fluid, Semi-active vibration control, shock absorber, type 2 fuzzy control.

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Authors: A. Leelasantitham, B. Srisuchinwong

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A high-frequency low-power sinusoidal quadrature oscillator is presented through the use of two 2nd-order low-pass current-mirror (CM)-based filters, a 1st-order CM low-pass filter and a CM bilinear transfer function. The technique is relatively simple based on (i) inherent time constants of current mirrors, i.e. the internal capacitances and the transconductance of a diode-connected NMOS, (ii) a simple negative resistance RN formed by a resistor load RL of a current mirror. Neither external capacitances nor inductances are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz and is current-tunable over a range of 370 MHz or 21.6 %. The power consumption is at approximately 0.45 mW. The amplitude matching and the quadrature phase matching are better than 0.05 dB and 0.15°, respectively. Total harmonic distortions (THD) are less than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The ratio of the oscillation frequency (f0) to the unity-gain frequency (fT) of a transistor is 0.25. Comparisons to other approaches are also included.

Keywords: Sinusoidal quadrature oscillator, low-pass-filterbased, current-mirror bilinear transfer function, all-current-mirror, negative resistance, low power, high frequency, low distortion.

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Authors: S. M. Giripunje, Shikha Jindal

Abstract:

Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 10⁴ times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.

Keywords: Graphene, mobility, nanocomposites, photovoltaics, quantum dots, zinc sulphide.

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Authors: C. Virgilio, J. Carlier, P. Campistron, M. Toubal, P. Garnier, L. Broussous, V. Thomy, B. Nongaillard

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Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device defectivity. This issue is more and more important with the transistors size shrinkage and concerns mainly high aspect ratio structures. Deep Trench Isolation (DTI) structures enabling pixels’ isolation in imaging devices are subject to this phenomenon. While low-frequency acoustic reflectometry principle is a well-known method for Non Destructive Test applications, we have recently shown that it is also well suited for nanostructures wetting characterization in a higher frequency range. In this paper, we present a high-frequency acoustic reflectometry characterization of DTI wetting through a confrontation of both experimental and modeling results. The acoustic method proposed is based on the evaluation of the reflection of a longitudinal acoustic wave generated by a 100 µm diameter ZnO piezoelectric transducer sputtered on the silicon wafer backside using MEMS technologies. The transducers have been fabricated to work at 5 GHz corresponding to a wavelength of 1.7 µm in silicon. The DTI studied structures, manufactured on the wafer frontside, are crossing trenches of 200 nm wide and 4 µm deep (aspect ratio of 20) etched into a Si wafer frontside. In that case, the acoustic signal reflection occurs at the bottom and at the top of the DTI enabling its characterization by monitoring the electrical reflection coefficient of the transducer. A Finite Difference Time Domain (FDTD) model has been developed to predict the behavior of the emitted wave. The model shows that the separation of the reflected echoes (top and bottom of the DTI) from different acoustic modes is possible at 5 Ghz. A good correspondence between experimental and theoretical signals is observed. The model enables the identification of the different acoustic modes. The evaluation of DTI wetting is then performed by focusing on the first reflected echo obtained through the reflection at Si bottom interface, where wetting efficiency is crucial. The reflection coefficient is measured with different water / ethanol mixtures (tunable surface tension) deposited on the wafer frontside. Two cases are studied: with and without PFTS hydrophobic treatment. In the untreated surface case, acoustic reflection coefficient values with water show that liquid imbibition is partial. In the treated surface case, the acoustic reflection is total with water (no liquid in DTI). The impalement of the liquid occurs for a specific surface tension but it is still partial for pure ethanol. DTI bottom shape and local pattern collapse of the trenches can explain these incomplete wetting phenomena. This high-frequency acoustic method sensitivity coupled with a FDTD propagative model thus enables the local determination of the wetting state of a liquid on real structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are then detectable with this method.

Keywords: Wetting, acoustic reflectometry, gigahertz, semiconductor.

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